KR20100125768A - Chemical amplification type positive resist composition - Google Patents

Abstract

PURPOSE: A chemical amplification type positive resist composition is provided to secure the excellent sensitivity, resolution, and applicability of the composition, and to improve the profile when forming a pattern. CONSTITUTION: A chemical amplification type positive resist composition contains the following: resin with the glass transition temperature of 150~170deg C, the molecular weight of 9,000~11,000, and the protection rate of 23~27%, containing a structural unit marked with chemical formula 1, and a structural unit marked with chemical formula 2; a photo-acid generator containing a compound marked with chemical formula 3; a quencher; and a solvent containing a first solvent and a second solvent with the different viscosity and specific gravity.

Description

Chemically Amplified Positive Photoresist Composition {CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION}

The present invention relates to a chemically amplified positive photoresist composition, and more particularly to a chemically amplified positive photoresist composition comprising two or more organic solvents having different specific gravity and viscosity.

In recent years, as the degree of integration of integrated circuits has increased, submicron pattern formation has been required. In particular, photolithography using an excimer laser from fluoride krypton (KrF) or argon fluoride (ArF) has been noted in that it enables the production of 64M DRAM to 1G DRAM. As a photoresist suitable for a photolithography process using such an excimer laser, a so-called chemically amplified photoresist using an acid catalyst and a chemical amplification effect is adopted. When a chemically amplified photoresist is used, the acid generated from the photoacid generator in the irradiation section of the radiation is diffused by subsequent heat treatment, and the solubility of the alkaline developer in the irradiation section is changed by a reaction using the acid as a catalyst to make the positive. A pattern or negative pattern is obtained.

In chemically amplified positive type photoresists, particularly positive type photoresists for KrF excimer laser photolithography, a poly (hydroxystyrene) resin, a part of the phenolic hydroxyl group of the poly (hydroxystyrene) resin, acts as an acid. The resin protected by the group dissociated by is often used in combination with a photoacid generator. In addition, as a group dissociated by the action of these acids, it is well known that resins having a specific structure of adamantyl-based polymer units and specific high-polar polymer units are effective in achieving adhesion to the substrate, etching resistance and good resolution. have.

However, even these resins with good performance show the limitations of profiles, such as standing waves or reverse tapers, at different film thicknesses and under different conditions. In addition, resins having high hydrophobicity at the time of post-exposure development aggregate together in a hydrophilic atmosphere during ultrapure water washing to grow into particles. Therefore, these particles are resorbed to the part where the substrate enters by exposure and development, and the transmittance of the photoresist decreases in the metal wiring or implant process, resulting in a profile in which low sensitivity, low resolution, and inclination occur.

The present invention is to solve the problems of the prior art as described above, and various performances such as sensitivity, resolution, coating property, etc. required for a chemically amplified positive photoresist composition are good, and in particular, standing waves or reverse taper It is an object of the present invention to provide a chemically amplified positive photoresist composition having an improved profile when forming a pattern under a film thickness condition in which?) And an excellent performance without developing defects.

The present invention (A) comprises a structural unit represented by the formula (1) and a structural unit represented by the formula (2) in a molar ratio of 2: 8 to 5: 5, the glass transition temperature (Tg) is 150 to 170 ℃, molecular weight Resin of 9,000 to 11,000 and protective rate of 23 to 27%; (B) a photoacid generator comprising a compound represented by the following formula (3); (C) quencher; And (D) a chemically amplified positive photoresist composition comprising a solvent comprising a first organic solvent and a second organic solvent having different specific gravity and viscosity.

Where

R ₁ is a hydrogen atom or a methyl group,

R ₂ is a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms.

Where

R ₃ and R ₄ are each independently a hydroxy group, an amino group or a C 1-10 linear or branched alkyl group unsubstituted or substituted with an alkoxy group having 1 to 6 carbon atoms; A cyclic alkyl group having 3 to 10 carbon atoms unsubstituted or substituted with a hydroxy group, an amino group or an alkoxy group having 1 to 6 carbon atoms; Or an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or an unsubstituted aryl group having 6 to 11 carbon atoms substituted with a halogen atom.

The chemically amplified positive photoresist composition of the present invention has various performances such as sensitivity, resolution, and applicability required for the chemically amplified positive photoresist composition, and particularly, a film thickness in which standing waves or reverse tapers appear. In the case of forming the pattern under the conditions, it has an improved profile, and there is an effect of not causing development defects.

Hereinafter, the present invention will be described in detail.

The chemically amplified positive photoresist composition of the present invention comprises (A) a resin, (B) a photoacid generator, (C) a quencher, and (D) an organic solvent.

Ⅰ. (A) resin

The resin (A) used in the present invention is a resin that is insoluble or poorly soluble in aqueous alkali solution, but becomes soluble in aqueous alkali solution after dissociation of a functional group unstable with acid by the action of acid.

The resin (A) used in the present invention includes a structural unit represented by the following Chemical Formula 1 and a structural unit represented by the Chemical Formula 2 in a molar ratio of 2: 8 to 5: 5, and has a glass transition temperature (Tg) of 150 to 170. ℃, the molecular weight is 9,000 to 11,000, characterized in that the protection rate is 23 to 27%.

[Formula 1]

Where

R ₁ is a hydrogen atom or a methyl group,

R ₂ is a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms.

Preferably, in Formulas 1 and 2, R ₁ is a methyl group, R ₂ is an ethyl group.

(2)

In the resin (A), the structural units represented by Chemical Formula 1 and the structural units represented by Chemical Formula 2 are linearly arranged in a molar ratio of 2: 8 to 5: 5, and the glass transition temperature (Tg) is 150 to 170 ° C. Is preferably. More preferably, the structural units represented by the formula (1) and the structural units represented by the formula (2) are alternately arranged in a line. In particular, it is more preferable that one structural unit represented by the formula (1) and two to six structural units represented by the formula (2) are alternately arranged in a line. In the glass transition temperature range as described above, since the distribution of hydroxystyrene between the deprotecting groups is uniformly distributed, the properties of the photoresist, that is, the development defect is suppressed, the residual film rate is lowered, and an excellent profile is obtained.

More preferably, the structural unit represented by Formula 1 and the structural unit represented by Formula 2 have a molar ratio of 2: 8 to 3: 7.

The weight average molecular weight of the resin (A) is preferably 9,000 to 11,000. Within the range of the weight average molecular weight as described above, it is easy to form a pattern, it is possible to implement an appropriate dissolution rate is less likely to cause residue after development. In addition, the molecular chain is not entangled there is an advantage that the desorption of the protecting group is easy. The weight average molecular weight is measured by gel permeation chromatography using polystyrene as a conversion material.

The resin similar to the resin (A), which is used in the related art, is a block copolymer separated by hydrophilic and hydrophobic groups in molecular units and separated according to their characteristics, so that the glass transition temperature (Tg) is 130 to 140 ° C. In contrast, the resin (A) of the present invention has a homogeneous distribution of hydrophilic and hydrophobic groups from molecular units to polymer units to each other, and thus has a glass transition temperature (Tg) of 150 to 170 ° C. That is, it has a structure that is advantageous in suppressing development defects and improving standing waves, profiles, residual film ratios, and the like.

In addition, the resin (A) contains an adamantyl group in acetate as in the structural unit represented by Formula 1, and when the adamantyl group is desorbed, the acetic acid group is more developable than the hydroxyl group of the structural unit represented by Formula 2 above. There is an advantage that the resolution is improved.

In addition, the resin (A) includes both the structural unit represented by Chemical Formula 1 reacting at an ArF (193 nm) wavelength and the structural unit represented by Chemical Formula 2 reacting at KrF (248 nm), but mainly a KrF photoresist process. Used for

It is preferable that the dispersion degree of said (A) resin is 1.4-1.6. When the dispersion degree of the resin (A) is 1.4 to 1.6, physical properties required to form a precise pattern may be satisfied.

It is preferable that the protection rate of said (A) resin is 23%-27%. If the protection ratio of (A) resin is less than 23%, there is a problem that the resolution falls, and if the protection ratio of (A) resin exceeds 27%, it is difficult to have a pattern shape suitable for the invention. The protection ratio of the above-mentioned (A) resin is ((A) resin when two kinds are included, [(molar ratio of Formula 1 in A-1 resin) x (weight part of A-1 resin) + (Formula 1 of A-2 resin) Mole ratio) × (weight part of A-2 resin)] / (total weight part of A-1 resin and A-2 resin) × 100 can be calculated using a formula. When directly calculated by substituting the number, A-1 resin and A-2 resin are each contained 50 parts by weight, the molar ratio of Formula 1 in A-1 is 0.2, the molar ratio of Formula 2 is 0.8, and the formula in A-2 resin When the molar ratio of 1 is 0.3 and the molar ratio of Formula 2 is 0.7, [(0.2 × 50) + (0.3 × 50)] / 100 × 100 = 25%.

The resin (A) provides desirable physical properties in adjusting the overall properties of the photoresist.

Some of the hydroxyl groups of the hydroxystyrene polymerized unit which is the structural unit represented by Formula 2 may be further protected with a protecting group that can be dissociated with an acid. Preferred protecting groups of the hydroxy group are t-butyloxycarbonyl, ethyl benzene, tetrahydropyranyl, 1-ethoxyethyl and isopropyl. There is this. If the hydroxy group of Formula 2 is further protected with a protecting group, the protection rate is preferably 10% to 50%. The above protective range is preferable in adjusting the overall characteristics of the photoresist.

II. (B) mine generator

The photoacid generator (B) used in the present invention is a substance which generates an acid by irradiating the substance itself or a photoresist composition containing such substance with high energy radiation such as far ultraviolet rays, electron beams, X-rays, or radiant light. . In a chemically amplified positive photoresist composition, the acid generated from the photoacid generator acts on the resin described above to dissociate the group that is unstable with the acid present in the resin.

 The photoacid generator (B) includes a compound represented by the following formula (3).

(3)

In the above formula, R ₃ and R ₄ are each independently a linear or branched alkyl group having 1 to 10 carbon atoms unsubstituted or substituted with a hydroxy group, an amino group or an alkoxy group having 1 to 6 carbon atoms; A cyclic alkyl group having 3 to 10 carbon atoms unsubstituted or substituted with a hydroxy group, an amino group or an alkoxy group having 1 to 6 carbon atoms; Or an aryl group having 6 to 11 carbon atoms unsubstituted or substituted with an alkyl group having 1 to 20 carbon atoms, alkoxy having 1 to 6 carbon atoms or a halogen atom.

Preferably, in Formula 3, R ₃ and R ₄ are each independently n-propyl group, n-butyl group, n-octyl group, toluyl group, 2,4,6-trimethylphenyl group, 2,4,6- Triisopropylphenyl group, 4-dodecylphenyl group, 4-methoxyphenyl group, 2-naphthyl group or benzyl group. More preferably, in Formula 3, R ₃ and R ₄ are each independently n-propyl group and n-butyl group.

The photoacid generator (B) may further include a compound represented by Chemical Formula 3 above and another photoacid generator having high acidity and high transmittance. As the other photoacid generators, it is preferable to use one having a higher transmittance than the conventional photoacid generators. When such a photoacid generator is used, high resolution can be maintained even in a thick film.

The other photoacid generators include onium salt compounds, s-triazine-based organic halogen compounds, sulfone compounds, sulfonate compounds, and the like, which may be used alone or in combination of two or more thereof. Specific examples of the other photoacid generators include diphenyl iodonium trifluoromethanesulfonate, 4-methoxyphenylphenyl iodonium hexafluoroantimonate, 4-methoxyphenylphenyl iodonium trifluoromethanesulfonate , Bis (4-t-butylphenyl) iodonium tetrafluoroborate, bis (4-t-butylphenyl) iodonium hexafluorophosphate, bis (4-t-butylphenyl) iodonium hexafluoroantimonate , Bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium trifluoromethanesulfonate, 4-methylphenyldiphenylsulfonium perfluorobutanesulfonate, 4-methylphenyldiphenylsulfonium perfluorooctanesulfonate, 4-methoxyphenyldiphenylsulfonium hexafluoroantimonate, 4-methoxyphenyldi Phenylsulfonium trifluoro Tansulfonate, p-tolyldiphenylsulfonium trifluoromethanesulfonate, 2,4,6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-t-butylphenyldiphenylsulfonium trifluoro Methanesulfonate, 4-phenylthiophenyldiphenylsulfonium hexafluorophosphate, 4-phenylthiophenyldiphenylsulfonium hexafluoroantimonate, 1- (2-naphtolylmethyl) thiolanium hexafluoroanti Monate, 1- (2-naphtolylmethyl) thiolanium trifluoromethanesulfonate, 4-hydroxy-1-naphthyldimethylsulfonium hexafluoroantimonate, 4-hydroxy-1-naphthyl Dimethylsulfonium trifluoromethanesulfonate, N- (trifluoromethylsulfonyloxy) -5-norbornene-2,3-dicarboxyimide, N- (trifluoromethylsulfonyloxy) naphthali Mead etc. are mentioned.

Among them, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, and triphenylsulfonium trifluoric acid having a cationic group of triphenylsulfonium and containing a fluorine group as an anionic group and having high acidity and high lipophilic properties Romethanesulfonate, triphenylsulfonium 2,4,6-triisopropylbenzenesulfonate, 4-methylphenyldiphenylsulfonium perfluorobutanesulfonate, 4-methylphenyldiphenylsulfonium perfluorooctanesulfonate, 4-methoxyphenyldiphenylsulfonium hexafluoroantimonate, 4-methoxyphenyldiphenylsulfonium trifluoromethanesulfonate, p-tolyldiphenylsulfonium trifluoromethanesulfonate, 2,4, 6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-t-butylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-phenylthiophenyldiphenylsulfonium hexafluorophosphate, Preference is given to using 4-phenylthiophenyldiphenylsulfonium hexafluoroantimonate or the like.

The photoacid generator (B) is preferably included in an amount of 0.1 to 8 parts by weight (based on solids) based on 100 parts by weight (based on solids) of the (A) resin. If the above-described range is satisfied, development defects do not occur and thus the resolution is excellent, and the shape of the pattern is excellent.

In the present invention, when the compound represented by the formula (3) and the other photoacid generator are mixed and used as the (B) photoacid generator, the mixing weight ratio thereof is preferably 5: 5 to 9: 1. When mixed in the above-described range, it is possible to obtain an excellent profile, there is an advantage that can prevent the development failure.

III. (C) quencher

In the present invention, the organic base compound may be used as the (C) quencher, and in particular, a nitrogen-containing basic organic compound is preferable. Specific examples of the (C) quencher include tetramethylammonium hydroxide, tetra-n-butylammonium hydroxide, tetra-n-hexylammonium hydroxide, tetra-n-octylammonium hydroxide, phenyltrimethylammonium Hydroxide, 3- (trifluoromethyl) -phenyltrimethylammonium hydroxide, (2-hydroxyethyl) trimethylammonium hydroxide, dicyclohexylmethylamine, 2,6-diisopropylaniline, tris ( 2- (2-methoxyethoxy) ethyl) amine etc. are mentioned, These can be used individually by 1 type or in mixture of 2 or more types.

In addition, a hindered amine compound having a piperidine skeleton as described in JP-A-11-52575 can also be used as a quencher.

The (C) quencher is preferably contained in an amount of 0.001 to 10 parts by weight (based on solids) based on 100 parts by weight (based on solids) of the (A) resin. If the above-mentioned range is satisfied, since an appropriate amount of acid is diffused, the sensitivity is improved, the profile of the pattern is improved, and development defects are also minimized.

Ⅳ. (D) solvent

The solvent (D) used in the present invention includes a first organic solvent and a second organic solvent having different specific gravity and viscosity. Such a solvent provides an effect of increasing the amount of organic solvent remaining after the soft baking process in the photolithography process. Here, the increased residual organic solvent may increase the diffusion length of the photoacid generator, thereby lowering the threshold exposure energy while maintaining the same amount of exposure energy required during the exposure process. When the threshold exposure energy is lowered, the acid generated from the photoacid generator at the exposed portion of the photoresist may be increased. When the acid is increased, a portion of the resin that is to be soluble in the aqueous alkali solution becomes poorly soluble and can be prevented from remaining on the substrate, and re-adsorption of particles that have been dissolved and dropped can be prevented.

It is preferable that the first organic solvent has a viscosity of 1.0 cP to 1.5 cP lower than that of the second organic solvent. When the difference in viscosity is less than 1.0 cP, the effect of the present invention may not be realized, and when the difference in viscosity exceeds 1.5 cP, a problem may occur in that the coating flatness of the photoresist becomes worse.

The mass ratio of the first organic solvent and the second organic solvent in the solvent (D) is preferably 5: 5 to 9: 1. When the first organic solvent includes a mass ratio of less than 5, the development defect is increased by a phenomenon that the amount of the remaining solvent is reduced, and when the first organic solvent exceeds 9, the effect of the present invention cannot be realized.

The first organic solvent or the second organic solvent is preferably selected from the group consisting of glycol ether ester compounds, glycol ether compounds, ester compounds, ketone compounds, cyclic ester compounds and alcohol compounds. Examples of the glycol ether ester compounds include ethyl cellosolve acetate, methyl cellosolve acetate, and propylene glycol monomethyl ether acetate. Examples of the glycol ether compound include propylene glycol monomethyl ether. The ester compound may include ethyl lactate, butyl acetate, amyl acetate, ethyl pyruvate, and the like, and the ketone compound may include acetone, methyl isobutyl ketone, 2-heptanone, cyclohexanone, and the like. In addition, the cyclic ester compound may be mentioned γ-butyrolactone and the like, and the alcohol compound may be 3-methoxy-1-butanol.

In the chemically amplified positive photoresist composition of the present invention, the first organic solvent and the second organic solvent include propylene glycol monomethyl ether acetate (specific gravity: 0.97 / 20 ° C; viscosity: 1.1 cP) and ethyl lactate (specific gravity). : 1.031 / 20 ° C>, viscosity: 2.4 cP).

The solvent (D) may further include an organic solvent other than the first organic solvent and the second organic solvent.

The solvent (D) is preferably included in an amount of 750 to 1250 parts by weight based on 100 parts by weight of the (A) resin. When the solvent is included in the above range, it is possible to realize a suitable film thickness of the resist.

The photoresist composition of the present invention may further include conventional additives in addition to the above components, and the additives include sensitizers, dissolution inhibitors, other resins, surfactants, stabilizers, dyes, and the like. no.

The photoresist composition of the present invention is usually in the form of a liquid photoresist composition containing components dissolved in a solvent, and is applied onto a substrate such as a silicon wafer by a conventional method. The photoresist applied to the substrate and dried is subjected to an exposure treatment for pattern formation, followed by heat treatment to promote the protective group removal reaction, and then developed with an alkali developer. The alkali developer used in the present invention can be selected from various aqueous alkali solutions, and usually tetramethylammonium hydroxide and (2-hydroxyethyl) trimethylammonium hydroxide (commonly referred to as choline) are frequently used. .

Hereinafter, the present invention will be described in more detail using examples and comparative examples. However, the following examples are provided to illustrate the present invention, and the present invention is not limited to the following examples and may be variously modified and changed.

Examples 1 and Comparative Examples 1 to 7: Preparation of Chemically Amplified Positive Photoresist Compositions

The resin, the photoacid generator, and the quencher were mixed at the components and composition ratios shown in Table 1, and then the mixture was dissolved in 1,000 parts by weight of an organic solvent, and then filtered through a fluorine resin filter having a pore diameter of 0.2 μm. A photoresist composition solution was prepared.

A-1: The structural units represented by the formula (1) (R ₁ : methyl group, R ₂ : ethyl group) and the structural units represented by the formula (2) are alternately arranged in a line form, the molar ratio of the structural unit is 2: 8, glass Resin having a transition temperature (Tg) of 150 ° C. and a molecular weight of 9,150 (manufacturer: Dupont, trade name: SRC-20)

A-2: The structural units represented by Formula 1 (R ₁ : methyl group, R ₂ : ethyl group) and the structural units represented by Formula 2 are alternately arranged in a line, and the molar ratio of the structural units is 3: 7, free Resin having a transition temperature (Tg) of 150 ° C. and a molecular weight of 9,300 (manufacturer: Dupont, trade name: SRC-30)

A-3: Resin (manufacturer: Dupont, brand name: Poly GA2) which is the same as A-1, and glass transition temperature (Tg) is 142 degreeC,

A-4: Others are the same as A-2, and the resin having a glass transition temperature (Tg) of 142 ° C (manufacturer: Dupont, trade name: Poly GA2)

B-1: Diazodisulfone type photoacid generator in which R ₃ and R ₄ in Formula 3 are each a butyl group

B-2: triphenylsulfonium 2,4,6-triisopropylbenzenesulfonate

C-1: 2,6-diisopropylaniline

C-2: tris (2- (2-methoxyethoxy) ethyl) amine

D-1: propylene glycol monomethyl ether acetate (specific gravity: 0.97 / 20 ° C>, viscosity: 1.1 cP)

D-2: ethyl lactate (specific gravity: 1.031 / 20 ° C>, viscosity: 2.4 cP)

Test Example: Evaluation of Chemically Amplified Positive Photoresist Composition

The chemically amplified positive photoresist composition solutions of Example 1 and Comparative Examples 1 to 7 were applied to a silicon wafer treated with hexamethyldisilazane using a spin coater and dried to form a photoresist film having a film thickness of 0.4 탆. It was. The photoresist film was preheated for 60 seconds on a hotplate at 110 ° C. The wafer having the photoresist film thus formed was gradually changed in exposure dose using a scanning exposure apparatus ['NSR-S203B' manufactured by Nikon Corp., NA = 0.68, sigma = 0.75] having an exposure wavelength of 248 nm (KrF). It exposed and formed the contact hole pattern. The post-exposure bake on the hotplate was then performed at 110 ° C. for 60 seconds. In addition, paddle development was performed for 60 seconds using an aqueous 2.38% tetramethylammonium hydroxide solution. The depth of focus and the profile of the photoresist film after development were measured with a 0.13 µm line and space pattern using a KLA scanning electron microscope. The measurement results are shown in Table 2 below.

profile Sensitivity (mJ / cm2) Resolution (um) Example 1 ◎ 120 0.15 Comparative Example 1 △ 110 0.175 Comparative Example 2 ○ 125 0.15 Comparative Example 3 △ 120 0.15 Comparative Example 4 △ 110 0.175 Comparative Example 5 △ 126 0.15 Comparative Example 6 △ 130 0.15 Comparative Example 7 △ 130 0.15

◎: Very good, ○: Excellent, △: Normal, ×: Poor

As shown in Table 2, it can be seen that Example 1 has a superior profile and resolution than Comparative Examples 1 and 2 in which the protection rate does not satisfy the scope of the present invention (see FIGS. 1 and 2). In addition, it can be seen that Example 1 is superior in profile and resolution than Comparative Examples 3 to 5 using resins (A-3 and A-4) having a conventional glass transition temperature (Tg) of less than 150 ° C. In addition, it can be seen that Example 1 is superior to Comparative Examples 6 and 7 in which an organic solvent alone is used (see FIG. 3).

As a result of the above test, the chemically amplified positivite including two organic solvents having different protection rates and specific gravity within a certain range under a condition of thin film thickness or a condition requiring a fine pattern, and having different viscosity and specific gravity. When using a photoresist, it is shown that a better profile can be obtained than otherwise.

1 is a photograph in which a pattern is formed with the photoresist composition of Example 1 and a profile is taken using a Hitachi scanning electron microscope.

FIG. 2 is a photograph of a pattern formed of the photoresist composition of Comparative Example 1 and taken of a profile using a Hitachi scanning electron microscope. FIG.

3 is a photograph in which a pattern is formed of the photoresist composition of Comparative Example 6 and the profile is taken using a Hitachi scanning electron microscope.

Claims (12)

(A) a structural unit represented by the following formula (1) and a structural unit represented by the formula (2) in a molar ratio of 2: 8 to 5: 5, the glass transition temperature (Tg) is 150 to 170 ℃, molecular weight is 9,000 to 11,000 and having a protection rate of 23 to 27%; (B) a photoacid generator comprising a compound represented by the following formula (3); (C) quencher; And (D) a solvent comprising a first organic solvent and a second organic solvent having different specific gravity and viscosity, wherein the chemically amplified positive photoresist composition comprises: [Formula 1]

Where R ₁ is a hydrogen atom or a methyl group, R ₂ is a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms. (2)

[Formula 3]

Where R ₃ and R ₄ are each independently a hydroxy group, an amino group or a C 1-10 linear or branched alkyl group unsubstituted or substituted with an alkoxy group having 1 to 6 carbon atoms; A cyclic alkyl group having 3 to 10 carbon atoms unsubstituted or substituted with a hydroxy group, an amino group or an alkoxy group having 1 to 6 carbon atoms; Or an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or an aryl group having 6 to 11 carbon atoms substituted or unsubstituted with a halogen atom. The method according to claim 1, wherein the chemically amplified positive photoresist composition is 0.1 to 8 parts by weight of the (B) photoacid generator, 0.001 to 10 parts by weight of the (C) quencher with respect to 100 parts by weight of the (A) resin, and The chemically amplified positive photoresist composition comprising (D) 750 to 1250 parts by weight of the solvent. The chemically amplified positive photoresist composition of claim 1, wherein the resin (A) is one linear structural unit represented by Formula 1 and two to six structural units represented by Formula 2. The chemically amplified positive photoresist composition of claim 1, wherein the resin (A) has a dispersibility of 1.4 to 1.6. The chemically amplified positive photoresist composition of claim 1, wherein in Formula 1, R ₁ is a methyl group and R ₂ is an ethyl group. The chemically amplified positive photoresist composition according to claim 1, wherein a part of the hydroxy group of the structural unit represented by Chemical Formula 2 is protected with a dissociable protecting group by an acid. The method according to claim 1, wherein the first organic solvent and the second organic solvent of the solvent (D) is ethyl cellosolve acetate, methyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate , Butyl acetate, amyl acetate, ethyl pyruvate, acetone, methyl isobutyl ketone, 2-heptanone, cyclohexanone, γ-butyrolactone and 3-methoxy-1butanol Chemically Amplified Positive Photoresist Composition. The chemically amplified positive photoresist composition of claim 1, wherein the first organic solvent of the solvent (D) has a viscosity of 1.0 cP to 1.5 cP lower than that of the second organic solvent. The chemically amplified positive photoresist according to claim 8, wherein the mass ratio of the first organic solvent and the second organic solvent is 5: 5 to 9: 1. The method according to claim 1, R ₃ and R ₄ in Formula 3 are each independently n-propyl, n-butyl, n-octyl, toluyl, 2,4,6-trimethylphenyl, 2,4,6 A chemically amplified positive photoresist composition, characterized in that it is selected from the group consisting of a triisopropylphenyl group, a 4-dodecylphenyl group, a 4-methoxyphenyl group, a 2-naphthyl group, and a benzyl group. The method of claim 1, wherein the (B) photo-acid generator further comprises one or two or more selected from the group consisting of an onium salt compound, an s-triazine-based organic halogen compound, a sulfone compound, and a sulfonate compound. A chemically amplified positive photoresist composition. The chemically amplified positive photoresist composition according to claim 1, wherein the (C) quencher is a nitrogen-containing basic organic compound.

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