KR20090002861A - Chemically amplified positive photoresist composition - Google Patents

Abstract

A chemically amplified positive photoresist composition is provided to prevent the re-adsorption of a hydrophobic resin on a substrate during the cleaning process, thereby improving sensitivity and resolution. A chemically amplified positive photoresist composition comprises a resin which comprises a structural unit represented by the formula 1 and a structural unit represented by the formula 2 arranged linearly in a ratio of 2-5 : 5-8 by mol and has a glass transition temperature of 150-170 deg.C and a molecular weight of 9,000-11,000; a photoacid generator; and a compound represented by the formula 3, wherein R1 is H or a methyl group; R2 is a C1-C10 linear, branched or cyclic alkyl group; R7 and R8 are independently a bond, a C1-C6 linear, branched or cyclic alkylene group substituted or unsubstituted with a halogen atom, or a C2-C6 linear, branched or cyclic alkenylene group substituted or unsubstituted with a halogen atom.

Description

Chemically Amplified Positive Photoresist Composition

The present invention relates to a chemically amplified positive photoresist composition suitable for photolithography.

In recent years, as the degree of integration of integrated circuits has increased, submicron pattern formation has been required. In particular, photolithography using an excimer laser from fluoride krypton (KrF) or argon fluoride (ArF) has been noted in that it enables the production of 64M DRAM to 1G DRAM. As a resist suitable for a photolithography process using such an excimer laser, a so-called chemically amplified resist using an acid catalyst and a chemical amplification effect is adopted. When a chemically amplified resist is used, the acid generated from the photoacid generator is diffused by the subsequent heat treatment in the radiation irradiation unit, and the solubility in the alkaline developer of the irradiation unit is changed by the reaction using the diffused acid as a catalyst. Or a negative type pattern is obtained.

In chemically amplified positive photoresists, in particular for positive photoresists for KrF excimer laser photolithography, it is known that resins having a specific structure of adamantane-based polymer units and specific high polar polymer units are effective in improving adhesion to a substrate. have. It is also known that fine line patterns can be realized by using a material that has enhanced the resolution of these chemically amplified positive resists. However, even when such a resin is used, there is a limit in the profile because the film is formed in a condition in which the film thickness is thick and the substrate has a specificity when used for the metal process and the implanter process.

In addition, when the film thickness is large and the exposure area is large and the volume of the resist that is soluble and removed in the aqueous alkali solution is high, the hydrophobic resins agglomerate and grow into particles in a hydrophilic atmosphere during ultrapure water cleaning. Therefore, the particles are resorbed to the part where the substrate is exposed by exposure and development, and the transmittance of the resist is reduced in the metal wiring or implant process, resulting in a profile in which the sensitivity, low resolution, and inclination are generated.

Accordingly, the present invention provides a high sensitivity and high resolution by preventing re-adsorption of hydrophobic resins on a substrate during the cleaning process in a semiconductor or flat panel display photolithography process, thereby enabling the formation of a profile without developing defects. It is an object to provide a type positive photoresist composition.

The present invention,

(A) The structural units represented by the following formula (1) and the structural units represented by the formula (2) are linearly arranged in a molar ratio of 2-5: 5-8, with a glass transition temperature (Tg) of 150-170 ° C and a molecular weight of 9,000 Resin that is ~ 11,000,

(B) a photoacid generator, and

(C) It relates to a chemically amplified positive photoresist composition comprising a compound represented by the following formula (3).

Where

R ₁ is a hydrogen atom or a methyl group,

R <_2> is a C1-C10 linear, branched or cyclic alkyl group.

Wherein R ₇ and R ₈ are each independently a bond; C1-C6 linear or branched alkylene group substituted or unsubstituted with a halogen atom; Or an alkenylene group having 2 to 6 carbon atoms unsubstituted or substituted with a halogen atom.

The chemically amplified positive photoresist composition of the present invention exhibits high sensitivity and high resolution by preventing the hydrophobic resin from resorbing onto the substrate during the cleaning process in the semiconductor or flat panel display photolithography process, and has a development-free profile. Enable formation.

Hereinafter, the present invention will be described in detail.

The resin (A) contained in the photoresist composition of the present invention is a resin which is insoluble or poorly soluble in aqueous alkali solution, but becomes soluble in aqueous alkali solution after dissociation of an unstable functional group by the action of acid.

(A) The structural units represented by the following formula (1) and the structural units represented by the formula (2) are linearly arranged in a molar ratio of 2-5: 5-8, with a glass transition temperature (Tg) of 150-170 ° C and a molecular weight of 9,000 ~ 11,000.

[Formula 1]

Where

R ₁ is a hydrogen atom or a methyl group,

R <_2> is a C1-C10 linear, branched or cyclic alkyl group.

[Formula 2]

The resin (A) is one structural unit represented by the formula (1) and 2 to 6 structural units represented by the formula (2) are alternately arranged in a line in a molar ratio of 2-5: 5-8, glass transition temperature (Tg) Is 150-170 degreeC, and the resin whose molecular weight is 9,000-11,000 is more preferable.

It is preferable that (A) resin used by this invention is 1.4-1.6 in dispersion degree.

The resin (A) used in the present invention is preferably 20 to 35% in the acrylate polymerized unit in adjusting the overall properties of the resist.

Resin similar to the resin (A) used in the prior art (glass transition temperature (Tg) less than 150 ℃) is a hydrophilic, hydrophobic group gathered separately in the molecular unit, unlike the separation according to the characteristics of the present invention, (A) resin with glass transition temperature (Tg) of 150 ~ 170 ℃ is uniformly distributed from the molecular unit to each other to improve the properties of resist (defect defect, standing wave, profile, residual film ratio, etc.). Has an advantageous structure.

In the photoresist composition of the present invention, component (B), that is, a photoacid generator, is a compound that generates an acid by the action of light or radiation, and the material itself or a resist composition containing such a material is ultraviolet, ultraviolet, electron beam, X It is a substance that generates acid by irradiating high-energy radiation such as ray or radiation. The acid generated from the photoacid generator acts on the resin to dissociate the functional group that is unstable to the acid present in the resin.

In the present invention, a photoacid generator conventionally used in this field may be used without limitation, and in particular, it is preferable to use a compound represented by the following formula (4).

Where

R ₅ and R ₆ are each independently a hydroxy group, an amino group or a C 1-10 straight or branched chain alkyl group unsubstituted or substituted with a C 1-6 alkoxy group; A C3-C10 cycloalkyl group unsubstituted or substituted with a hydroxy group, an amino group or a C1-C6 alkoxy group; Or a C6-C11 aryl group unsubstituted or substituted with a C1-C20 alkyl group, a C1-C6 alkoxy group, or a halogen atom.

Preferably, in the above formula, R ₅ and R ₆ are each independently n-propyl group, n-butyl group, n-octyl group, toluyl group, 2,4,6-trimethylphenyl group, 2,4,6-triiso Propylphenyl group, 4-dodecylphenyl group, 4-methoxyphenyl group, 2-naphthyl group or benzyl group.

In addition, in the photoresist composition of the present invention, photoacid generators other than the photoacid generator of Formula 4 may be used together as the photoacid generator (B). Such other photoacid generators include onium salt compounds, s-triazine-based organic halogen compounds, sulfone compounds, sulfonate compounds and the like, and these may be used alone or in combination of two or more.

When the photoacid generator (4) and other photoacid generators are used together as the photoacid generator (B), the mixing ratio is preferably 50:50 to 90:10, and the photoacid generator of the general formula (4) is less than 50%. If included, the upper part of the profile is thickened, causing the profile to collapse, and when exceeding 90%, the effect of mixing the other photoacid generators is not obtained.

The other photoacid generators specifically include diphenyl iodonium trifluoromethanesulfonate, 4-methoxyphenylphenyl iodonium hexafluoroantimonate, 4-methoxyphenylphenyl iodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium tetrafluoroborate, bis (4-t-butylphenyl) iodonium hexafluorophosphate, bis (4-t-butylphenyl) iodonium hexafluoroantimonate, bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium trifluoromethanesulfonate, 4- Methylphenyldiphenylsulfonium perfluorobutanesulfonate, 4-methylphenyldiphenylsulfonium perfluorooctanesulfonate, 4-methoxyphenyldiphenylsulfonium hexafluoroantimonate, 4-methoxyphenyldiphenylsul Phosphorus trifluoromethane Phonates, p-tolyldiphenylsulfonium trifluoromethanesulfonate, 2,4,6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate, 4-t-butylphenyldiphenylsulfonium trifluoromethane Sulfonate, 4-phenylthiophenyldiphenylsulfonium hexafluorophosphate, 4-phenylthiophenyldiphenylsulfonium hexafluoroantimonate, 1- (2-naphtolylmethyl) thiolanium hexafluoroantimo Nate, 1- (2-naphthylmethyl) thiolanium trifluoromethanesulfonate, 4-hydroxy-1-naphthyldimethylsulfonium hexafluoroantimonate, 4-hydroxy-1-naphthyldimethyl Sulfonium trifluoromethanesulfonate, 2-methyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2,4,6-tris (trichloromethyl) -1,3, 5-triazine, 2-phenyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-chlorophenyl) -4,6-bis (trichloromethyl) -1 , 3-5-triazine, 2- (4-methoxyphenyl) -4 , 6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxy-1-naphthyl) -4,6-bis (trichloromethyl) -1,3,5- Triazine, 2- (benzo [d] [1,3] dioxolan-5-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxy Styryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (3,4,5-trimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (3,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2,4- Dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (2-methoxystyryl) -4,6-bis (trichloromethyl) -1, 3,5-triazine, 2- (4-butoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-pentyloxystyryl) -4 , 6-bis (trichloromethyl) -1,3,5-triazine, 1-benzoyl-1-phenylmethyl p-toluenesulfonate (commonly referred to as 'benzoin tosylate'), 2-benzoyl-2 -Hydroxy-2-phenylethyl p-toluenesulfonate (usually 'α-methylolbene) Intosylate '), 1,2,3-benzenetolyl trimethanesulfonate, 2,6-dinitrobenzyl p-toluenesulfonate, 2-nitrobenzyl p-toluenesulfonate, 4-nitrobenzyl p- Toluenesulfonate, diphenyl disulfone, di-p-tolyl disulfone, dis (phenylsulfonyl) diazomethane, bis (4-chlorophenylsulfonyl) diazomethane, bis (p-tolylsulfonyl) diazo Methane, bis (4-tert-butylphenylsulfonyl) diazomethane, bis (2,4-xylylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, (benzoyl) (phenylsul Ponyl) diazomethane, N- (phenylsulfonyloxy) succinimide, N- (trifluoromethylsulfonyloxy) succinimide, N- (trifluoromethylsulfonyloxy) phthalimide, N- (Trifluoromethylsulfonyloxy) -5-norbornene-2,3-dicarboxyimide, N- (trifluoromethylsulfonyloxy) naphthalimide, N- (10-camphorsulfonyl Oxy) naphthalimide, 4-methoxy-α-[[[(4-methylphenyl) sul Carbonyl] oxy], and the like imino] benzene acetonitrile.

In the chemically amplified positive photoresist composition of the present invention, the content of the (B) photoacid generator preferably contains 0.1 to 20 parts by weight based on 100 parts by weight of the resin (A) (in terms of solid content). If the content of the photoacid generator is less than 0.1 parts by weight, a poor appearance appears at a resolution such as a development defect, and if it exceeds 20 parts by weight, the permeability is poor. 　 The pattern shape collapses to hardly form a patterned resist layer.

Component (C) included in the photoresist composition of the present invention, that is, the compound represented by the formula (3), is soluble in an aqueous alkali solution by an acid generated from a photoacid generator at an exposure site during a photo process, and should be removed. It serves to prevent the resin from becoming poorly soluble and is represented as follows.

[Formula 3]

Wherein R ₇ and R ₈ are each independently a bond; C1-C6 linear or branched alkylene group substituted or unsubstituted with a halogen atom; Or an alkenylene group having 2 to 6 carbon atoms unsubstituted or substituted with a halogen atom.

In the above formula, R ₇ and R ₈ are preferably each independently a bond or a di (trifluoromethyl) methylene group .

In addition, the compound of Formula 3 preferably has a molecular weight of 100 ~ 1,000.

The resin, which was poorly soluble in an alkaline aqueous solution in the semiconductor or flat panel display photo process, is changed to soluble by an acid generated from a photoacid generator after receiving light and is dissolved, and when washed with ultrapure water, a fine pattern is realized. In this process, when the area of the exposed area is large, when the resin dissolved in the aqueous alkali solution is dissolved in ultrapure water, the resin becomes poorly soluble due to the high hydrophobicity of the resin and is resorbed to the substrate to form particles, thereby developing defects. Will occur. At this time, the component (C) is uniformly distributed between the resins to reduce the concentration of the resin to increase the transmittance, thereby preventing the hydrophobic resins from agglomerating again on the substrate during the ultrapure water cleaning process, thereby making it difficult to dissolve. Will inhibit adsorption. Therefore, it is possible to form a profile that exhibits high sensitivity and high resolution and is free of development defects.

The content of the component (C) in the chemically amplified positive photoresist composition of the present invention is preferably 0.1 to 20 parts by weight based on 100 parts by weight of the resin (A) (in terms of solid content). If it is less than 0.1 part by weight, the hydrophobic resin is resorbed to the substrate to improve the development defect, and if it is more than 20 parts by weight, the weight ratio of the component (C) becomes too large, resulting in a problem of lowering the resolution.

The photoresist composition of the present invention may contain other organic base compounds, in particular nitrogen-containing basic organic compounds as (D) quenchers in amounts that do not adversely affect the effects of the present invention.

Specific examples of the nitrogen-containing basic organic compound include compounds represented by the following structural formulas.

In the above structural formula, R ₉ and R ₁₀ are each independently hydrogen; C1-C6 linear or branched alkyl group substituted or unsubstituted by the hydroxyl group, the amino group, the C1-C4 alkyl group, or the C1-C6 alkoxy group; A C5-10 cycloalkyl group unsubstituted or substituted with a hydroxy group, an amino group, an amino group substituted with an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms; Or an amino group substituted with a hydroxy group, an amino group, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 10 carbon atoms unsubstituted or substituted with an alkoxy group having 1 to 6 carbon atoms,

R ₁₁ , R ₁₂ and R ₁₃ are each independently hydrogen; C1-C6 linear or branched alkyl group substituted or unsubstituted by the hydroxyl group, the amino group, the C1-C4 alkyl group, or the C1-C6 alkoxy group; A C5-10 cycloalkyl group unsubstituted or substituted with a hydroxy group, an amino group, an amino group substituted with an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms; A C1-6 alkoxy group unsubstituted or substituted with a hydroxy group, an amino group, an amino group substituted with an alkyl group having 1 to 4 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms; Or an amino group substituted with a hydroxy group, an amino group, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 10 carbon atoms unsubstituted or substituted with an alkoxy group having 1 to 6 carbon atoms,

R ₁₄ is a hydroxy group, an amino group, an amino group substituted with an alkyl group having 1 to 4 carbon atoms, or a straight or branched chain alkyl group having 1 to 6 carbon atoms unsubstituted or substituted with an alkoxy group having 1 to 6 carbon atoms; Or an amino group substituted with a hydroxy group, an amino group, an alkyl group having 1 to 4 carbon atoms, or a cycloalkyl group having 5 to 10 carbon atoms unsubstituted or substituted with an alkoxy group having 1 to 6 carbon atoms,

A is a C2-C6 linear or branched alkylene group, carbonyl group, sulfide group, or disulfide group.

In addition, a hindered amine compound having a piperidine skeleton as described in Japanese Patent Laid-Open No. 11-52575 may be further used as a quencher.

In the resist composition of the present invention, the quencher preferably contains 0.001 to 10 parts by weight based on 100 parts by weight of the component (A) resin. If the content of the quencher is less than 0.001 parts by weight, the diffusion of acid is increased so that an abnormality in the exposed area may be developed, and thus the pattern profile may be deteriorated. By causing a change in the profile accordingly, the photosensitivity of the photoresist composition is rather reduced.

In addition, the chemically amplified positive photoresist compositions of the present invention may further contain small amounts of various additives such as sensitizers, dissolution inhibitors, other resins, surfactants, stabilizers, dyes, and the like.

The chemically amplified positive photoresist composition is in the form of a resist liquid composition containing components dissolved in a conventional solvent, and is applied onto a substrate such as a silicon wafer by a conventional method.

The solvent used in the present invention preferably dissolves the components, exhibits a suitable drying rate, and provides a uniform and smooth film after solvent evaporation, and those conventionally used in this field can be used. Examples thereof include glycol ether esters such as ethylcellosolve acetate, methylcellosolve acetate and propylene glycol monomethyl ether acetate; Esters such as ethyl lactate, butyl acetate, amyl acetate and ethyl pyruvate; Ketones such as acetone, methyl isobutyl ketone, 2-heptanone and cyclohexanone; cyclic esters such as γ-butyrolactone; Alcohols such as 3-methoxy-1-butanol and the like. These solvents can be used individually or in mixture of 2 or more types, respectively.

Using the chemically amplified positive photoresist composition according to the present invention, a method of forming a resist pattern is provided by applying a chemically amplified positive photoresist composition on a substrate, selectively exposing, then heat-treating and developing with an alkaline developer. Including the process.

In more detail, the chemically amplified positive photoresist composition according to the present invention is applied to an etched layer such as a silicon wafer or a chromium substrate by using a spin coater to form a thin film. An electron beam is injected into an exposure source to the formed thin film, and then the exposed resist film is heated as necessary to promote the protecting group removal reaction. The heated resist film is developed with an alkaline developer to form a resist pattern. Alkali developers used in the present invention include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia water, ethylamine, n-propylamine, triethylamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide And various aqueous alkali solutions such as (2-hydroxyethyl) trimethylammonium hydroxide, among which tetramethylammonium hydroxide and (2-hydroxyethyl) trimethylammonium hydroxide (usually choline Is referred to).

Hereinafter, preferred examples are provided to aid in understanding the present invention. However, the following examples are merely provided to more easily understand the present invention, and the contents of the present invention are not limited thereto.

Example  1 to 3, and Comparative Example  1 to 6: Chemically Amplified Positive Photoresist  Preparation of the composition

The components shown in Table 1 were mixed at a corresponding composition ratio (in terms of solids), dissolved in 370 parts by weight of propylene glycol monomethyl ether acetate, and then filtered through a fluorine resin filter having a pore diameter of 0.1 µm to prepare a resist solution. It was. The prepared resist solution includes a resin containing a degree of protection of about 19.5% to 25%.

A-1: The structural units represented by the formula (1) (R1: methyl group, R2: ethyl group) and the structural units represented by the formula (2) are alternately arranged in a line, the molar ratio of the structural unit is 2.5: 7.5, the glass transition temperature (Tg) is 150 DEG C and has a molecular weight of ９,150 (manufacturer: Dupont, trade name: SRC-D90)

A-2: Others are the same as those of A-1, except that the resin has a glass transition temperature (Tg) of 160 ° C (manufacturer: Dupont, trade name: SRC-D90).

A-3: The others are the same as those of A-1, except that the resin has a glass transition temperature (Tg) of 14 2 ° C (manufacturer: Dupont, trade name: Poly GA2).

A-4: The others are the same as those of A-1, except that the resin has a glass transition temperature (Tg) of 145 ° C (manufacturer: Dupont, trade name: Poly GA2).

B: Diazodisulfone type photoacid generator in which R ₅ and R ₆ in Formula 2 are each cyclohexyl group,

C-1: 1,4-cyclohexanediol,

C-2: 1,2-cyclohexanediol,

C-3: In the formula (1), R ₇ and R ₈ are each di (trifluoromethyl) methylene,

C-4: polypropylene glycol (molecular weight 1000),

C-5: cresol,

C-6: 1,4-diisopropylcyclohexane

D: dicyclohexylmethylamine,

Test Example : Chemically Amplified Positive Photoresist  Performance test of the solution

The resist solutions prepared in Examples 1 to 4 and Comparative Examples 1 to 6 were applied to a silicon wafer treated with hexamethyldisilazane using a spin coater and dried to have a film thickness of 1.2080 μm. Then, preheat treatment was performed for 60 seconds on a hot plate at 100 ° C. The wafer having the resist film thus formed was gradually exposed to light using a scanning exposure machine ('NSR-S203B' manufactured by Nikon Corp., NA = 0.60, sigma == 0.75) having an exposure wavelength of 248 nm (KrF). Exposure was performed to form line and space patterns. Subsequently, in the hot plate, post-exposure heat treatment was performed at 110 ° C. for 60 seconds. In addition, paddle development was performed for 60 seconds using an aqueous 2.38% tetramethylammonium hydroxide solution. The developing defect was measured in the square space pattern of 50 micrometers using the KLA scanning electron microscope for the pattern after image development. In addition, the depth of focus and the profile was measured in 0.3㎛ line and space pattern. The results are shown in Table 2 and FIGS. 1 and 2.

profile Phenomenon defects Sensitivity (mJ / ㎠) q Example 1 ◎ 30 37 Example 2 ◎ 42 42 Example 3 ○ 73 44 Example 4 ○ 28 35 Comparative Example 1 × 21,137 44 Comparative Example 2 ○ 9,281 40 Comparative Example 3 × 21,428 66 Comparative Example 4 × 26,606 44 Comparative Example 5 ◎ 275 39 Comparative Example 6 ○ 250 37

As shown in Table 2, the chemically amplified positive photoresist compositions (Examples 1 to 4) according to the present invention include cyclohexane having an additive of a dihydroxy group which is a hydrophilic group having a molecular weight of 100 to 1,000 as an additive. It was confirmed that the sensitivity was excellent and the development defects were less likely to appear.

On the other hand, the photoresist composition (Comparative Examples 1 to 4) which does not include a cyclohexane having a hydrophilic group, a dihydroxy group as an additive, or includes an additive of another structure (Comparative Examples 1 to 4) showed a lot of development defects, resulting in poor profile formation.

In addition, the photoresist compositions (Examples 1 to 4) containing the resin components (A-1, A-2) of the present invention are photoresists containing the resin components (A-3, A-4) conventionally used. It was confirmed that the profile was excellent compared to the compositions (Comparative Examples 5-6), and in particular, very excellent in developing defect problems.

1A and 1B are photographs of the top profile 1a and the vertical profile 1b taken of a pattern after development formed of the photoresist composition of Example 1 using a KLA scanning electron microscope.

2A and 2B are photographs of the top profile 2a and the vertical profile 2b of the pattern after development formed with the photoresist composition of Comparative Example 1, taken using a KLA scanning electron microscope.

Claims (14)

(A) The structural units represented by the following formula (1) and the structural units represented by the formula (2) are linearly arranged in a molar ratio of 2-5: 5-8, with a glass transition temperature (Tg) of 150-170 ° C and a molecular weight of 9,000 Resin that is ~ 11,000, (B) a photoacid generator, and (C) a chemically amplified positive photoresist composition comprising a compound represented by the following formula (3): [Formula 1]

Where R ₁ is a hydrogen atom or a methyl group, R <_2> is a C1-C10 linear, branched or cyclic alkyl group. [Formula 2]

[Formula 3]

Wherein R ₇ and R ₈ are each independently a bond; C1-C6 linear or branched alkylene group substituted or unsubstituted with a halogen atom; Or an alkenylene group having 2 to 6 carbon atoms unsubstituted or substituted with a halogen atom. The chemically amplified positive photoresist composition according to claim 1, wherein the resin (A) has one structural unit represented by Chemical Formula 1 and two to six structural units represented by Chemical Formula 2 alternately arranged in a line. The chemically amplified positive photoresist composition of claim 1, wherein in Formula 1, R ₁ is a methyl group and R ₂ is an ethyl group. The chemically amplified positive photoresist composition according to claim 1, wherein the resin (A) has a dispersibility of 1.4 to 1.6. The chemically amplified positive photoresist composition according to claim 1, wherein the resin (A) has a degree of protection of 20 to 35% in the acrylate polymerized unit. The chemically amplified positive photoresist composition of claim 1, wherein in Formula 3, R ₇ and R ₈ are each independently a bond or di (trifluoromethyl) methylene. The chemically amplified positive photoresist composition of claim 1, wherein the compound of Formula 3 has a molecular weight of 100 to 1,000. The chemically amplified positive photoresist composition according to claim 1, wherein the photoacid generator (B) is a compound represented by the following general formula (4): [Formula 4]

Where R ₅ and R ₆ are each independently a hydroxy group, an amino group or a C 1-10 straight or branched chain alkyl group unsubstituted or substituted with a C 1-6 alkoxy group; A C3-C10 cycloalkyl group unsubstituted or substituted with a hydroxy group, an amino group or a C1-C6 alkoxy group; Or a C6-C11 aryl group unsubstituted or substituted with a C1-C20 alkyl group, a C1-C6 alkoxy group, or a halogen atom. The photoacid generator according to claim 1, wherein the photoacid generator (B) is a mixture of a compound represented by the following formula (4) and another photoacid generator, and the other photoacid generator is an onium salt compound, an s-triazine-based organic halogen compound, a sulfone compound, and a sulfonate A chemically amplified positive photoresist composition, characterized in that at least one selected from the group consisting of compounds: [Formula 4]

Where R ₅ and R ₆ are each independently a hydroxy group, an amino group or a C 1-10 straight or branched chain alkyl group unsubstituted or substituted with a C 1-6 alkoxy group; A C3-C10 cycloalkyl group unsubstituted or substituted with a hydroxy group, an amino group or a C1-C6 alkoxy group; Or a C6-C11 aryl group unsubstituted or substituted with a C1-C20 alkyl group, a C1-C6 alkoxy group, or a halogen atom. The method according to claim 8 or 9, in Formula 4 R ₅ and R ₆ are each independently n-propyl group, n-butyl group, n-octyl group, toluyl group, 2,4,6-trimethylphenyl group, 2, A 4,6-triisopropylphenyl group, 4-dodecylphenyl group, 4-methoxyphenyl group, 2-naphthyl group, or benzyl group. The chemically amplified positive photoresist composition according to claim 9, wherein a mixing ratio of the mixture of the photoacid generator of Chemical Formula 4 and the other photoacid generator is 50:50 to 90:10. The chemically amplified positive photoresist composition according to claim 1, wherein the photoacid generator (B) is included in an amount of 0.1 to 20 parts by weight based on 100 parts by weight of the resin (A) (in terms of solid content). The method according to claim 1, wherein the compound represented by the formula (C) 3 to 0.1 to 20 parts by weight based on 100 parts by weight of the (A) resin (in terms of solid content) A chemically amplified positive photoresist composition, characterized in that it is included. The chemically amplified positive photoresist composition according to claim 1, further comprising (D) a nitrogen-containing basic organic compound as a quencher.

Images