KR20100124016A - Flexible subsrrates are used in touch screen on the way to formation of polymer formation and transparent ito electrode - Google Patents

Flexible subsrrates are used in touch screen on the way to formation of polymer formation and transparent ito electrode Download PDF

Info

Publication number
KR20100124016A
KR20100124016A KR1020090043045A KR20090043045A KR20100124016A KR 20100124016 A KR20100124016 A KR 20100124016A KR 1020090043045 A KR1020090043045 A KR 1020090043045A KR 20090043045 A KR20090043045 A KR 20090043045A KR 20100124016 A KR20100124016 A KR 20100124016A
Authority
KR
South Korea
Prior art keywords
polymer
flexible substrate
touch screen
transparent electrode
forming
Prior art date
Application number
KR1020090043045A
Other languages
Korean (ko)
Inventor
구송림
김경민
송갑득
Original Assignee
주식회사 동아테크윈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동아테크윈 filed Critical 주식회사 동아테크윈
Priority to KR1020090043045A priority Critical patent/KR20100124016A/en
Publication of KR20100124016A publication Critical patent/KR20100124016A/en

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Position Input By Displaying (AREA)

Abstract

PURPOSE: A polymer and a transparent electrode ITO formation method of a flexible substrate used for a touch screen are provided to suppress cracking of ITO thin film due to a post heat processing by forming buffer polymer having heat resistance. CONSTITUTION: A flexible substrate(10) used for the formation of a transparent electrode of a touch screen or a display is prepared. To remove the moisture and impurity of the flexible substrate, a heat processing or plasma processing is performed by N2 or H2 or NH3 gas. A buffer layer polymer(20) having 250 degree heat resistance is evaporated on a flexible substrate which had a heat processing or plasma processing. The ITO(Indium Tin Oxide) thin film(30) is evaporated on the buffer layer polymer.

Description

FLEXIBLE SUBSRRATES ARE USED IN TOUCH SCREEN ON THE WAY TO FORMATION OF POLYMER FORMATION AND TRANSPARENT ITO ELECTRODE}

The present invention relates to a method for forming a polymer of a flexible substrate used for a touch screen and a method for forming a transparent electrode ITO, and forming a polymer, a buffer layer that is resistant to heat, in the manufacture of a touch screen. As the process proceeds, the ITO (Indium Tin Oxide) thin film caused by the expansion and contraction of the thin film (Crack) to suppress the phenomenon of the touch screen manufacturing significantly reduced.

Currently, the transparent substrate used for the touch screen is a PET film. This is advantageous in terms of price, but has a weak heat. In the case of PET film, the deformation occurs at about 150 ° C., and when the ITO thin film is deposited, the defect rate is very high when manufacturing the touch screen due to the lifting or cracking of the thin film.

In order to solve this problem, the substrate is preheated (after aging) by a method of exposing the substrate at a high temperature for a long time. This takes up the most time of the touch screen manufacturing process. As a method to solve this problem, PES and PI films that can withstand high temperatures can be used, but since they are expensive compared to PET films, they cannot be used by manufacturers with high price competition.

In the present invention, an Indium Tin Oxide (ITO) thin film generated by expansion and contraction of a substrate during a subsequent thermal process by forming a polymer, a heat resistant buffer layer, when a touch screen is manufactured It is aimed to greatly reduce the defective rate and improve the productivity in manufacturing the touch screen by suppressing the lifting or cracking of the touch screen.

The present invention is a process to remove moisture or impurities in a flexible substrate or a material hard-coated on a flexible substrate used in forming a transparent electrode of a touch screen or display, and a polymer that is a buffer layer resistant to heat. Disclosed are a touch screen and display manufacturing method including a process of forming a polymer and a process of depositing an ITO thin film.

In addition, the present invention is characterized in that a polymer, which is a buffer layer, is treated in advance on a substrate before deposition.

In another aspect, the present invention, characterized in that N 2 , H 2 or NH 3 gas is used as the reaction gas during deposition, 30sccm ~ 1000sccm, respectively, wherein the pressure of the reactor is maintained at 0.1torr ~ 3torr, the internal heating of the reactor The temperature is maintained at 25 ℃ ~ 100 ℃, when depositing RF power is maintained at 20Watt ~ 10kWatt, it characterized in that the use of Ar gas 30sccm ~ 1000sccm as the reaction gas.

In addition, the present invention is a process for removing moisture or impurities in a flexible substrate or a material hard-coated on a flexible substrate used in forming a transparent electrode of a touch screen or display, and a buffer layer resistant to heat. It is characterized in that the deposition of phosphor (Polymer), wherein the pressure of the reactor is maintained at 10 -6 torr ~ 1torr, the temperature of the reactor is maintained at Room Temperature, RF power is 20Watt ~ when using the plasma It is characterized by maintaining at 1kWatt.

In addition, the present invention is characterized by depositing an ITO thin film on a substrate, wherein at this time, Ar, O2 is used as the reaction gas 30sccm ~ 2000sccm, the pressure of the reactor is maintained at 10 -6 torr ~ 1torr, the reaction The furnace temperature is maintained at room temperature, and RF power is maintained at 20Watt ~ 10kWatt when using Plasma.

In the present invention, the polymer is characterized in that it is made of Teflon, acrylic, urethane, and the like.

In the present invention, the flexible substrate is characterized by using PET, PC, PI, PES, PE and the like.

In addition, the present invention is characterized in that applied to the manufacture of touch screen and flexible display.

In addition, the present invention is characterized in that the substrate treatment, ITO deposition, polymer deposition is carried out in a roll coater (Roll Coater).

Although the PET film used as a transparent substrate of a touch screen has a high heat resistance and is easily deformed even at a temperature of about 150 ° C., the ITO thin film is lifted or cracked, so that the manufacturing defect rate is very high. In the case of forming a buffer layer using a polymer having a heat resistance of about 250 ° C, the preheating of the substrate is unnecessary when manufacturing a touch screen, and the indium tin oxide (ITO) thin film generated by expansion and contraction of the substrate is lifted up. In addition, the crack phenomenon is suppressed, manufacturing defect rate is greatly reduced and productivity is doubled.

In addition, since the present invention does not require preheating of the substrate, the manufacturing process of the touch screen can be reduced, and in the case of a flexible display proceeding in a photo process of 200 ° C. or more, an expensive film or a metal substrate should be used. In the present invention, the heat resistance is improved by the buffer polymer, and thus it is a very useful invention that can replace the existing substrate.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the embodiments of the present invention, the same components in the drawings are denoted by the same reference numerals as much as possible, and detailed descriptions of related known configurations or functions will be omitted so as not to obscure the subject matter of the present invention.

The present invention includes the steps of preparing a flexible substrate 10 or a material hard-coated on the flexible substrate used in forming a transparent electrode of a touch screen or a display;

Heat treatment or plasma treatment with N 2 , H 2 or NH 3 gas to remove moisture and impurities of the flexible substrate 10 or the material hard-coated to the flexible substrate;

Depositing a buffer layer polymer (20) having a heat resistance of about 250 ° C. on the heat-treated or plasma-treated flexible substrate (10);

Depositing an ITO thin film (30) on the polymer (20);

The touch screen or display is manufactured.

In addition, according to the present invention, the buffer layer polymer 20 is preliminarily processed on the flexible substrate 10 before the ITO thin film 30 is deposited.

A method of forming a polymer for implementing the present invention is as follows.

1. The method of removing water and impurities in the substrate generated by hard coating before removing the polymer, which is a buffer layer, by treatment with gas heat treatment or plasma, is as follows.

a) N 2 , H 2 Or NH 3 Use gas at 30 sccm to 1000 sccm, respectively.

b) The temperature of the reactor is carried out at 25 ℃ to 100 ℃.

c) The reactor pressure is maintained at 0.1torr ~ 3torr

d). RF power should be 20Watt ~ 10kWatt when using Plasma

2. Next, the deposition of the buffer layer (Polymer) having excellent heat resistance (about 250 ℃) is as follows. (Figure 2)

a). Ar gas is used as the reaction gas at 30 sccm ~ 2000 sccm.

b). Keep the RF power between 20Watt and 1kWatt.

c). The reactor pressure is maintained at 10 -6 torr to 1 torr.

d). The temperature of the reactor is carried out at room temperature.

3. Next, ITO thin film deposition is carried out as follows (Fig. 3).

a). Ar, O 2 gas is used as the reaction gas, 30sccm ~ 1000sccm, respectively.

b). The temperature of the reactor is carried out at room temperature.

c). The reactor pressure is maintained at 10 -6 torr to 1 torr.

d). RF power is maintained between 20Watt and 10kWatt.

In the present invention (Polymer) is Teflon, acrylic, urethane-based.

In the present invention, the flexible substrate 10 uses one or at least one of PET, PC, PI, PES, PE, and the like.

In the present invention, the processing of the flexible substrate 10 and ITO thin film deposition and polymer deposition are performed in a roll coater or a spotter.

The present invention is characterized in that it is applied to a touch screen and a flexible display substrate.

On the other hand, the PET film used as a transparent substrate of the conventional touch screen (Touch Screen) was easily deformed even at a low temperature of about 150 ℃ while the ITO thin film was raised or cracks (cracks) occurred, but the manufacturing defect rate was very high, but the present invention In the present invention, the preheating of the substrate is unnecessary when forming a touch screen by forming a buffer layer using a polymer having a heat resistance of about 250 ° C. In addition, the lifting or cracking of the indium tin oxide (ITO) thin film caused by expansion and contraction of the substrate is suppressed, thereby significantly reducing the manufacturing defect rate and greatly improving the productivity.

The heat resistance of the polymer of the present invention (Polymer) is about 250 ℃, the heat resistance is about 100 ℃ than the PET film of about 150 ℃ and the heat resistance is excellent, so no additional preheating is required.

In addition, the conventional polymer (Polymer) was formed by a slit (Slit) or spin coater (Spin Coater), but it contains a lot of impurities during the process and difficult to control the thickness. However, in the present invention, by depositing it by the spotter method, it is possible to form a thin film having a high thickness control and density.

The present invention as described above is not limited to the present embodiment and the accompanying drawings, various substitutions, modifications and changes are possible within the scope without departing from the technical spirit of the present invention, which is usually in the art It is self-evident for those who have knowledge.

1 is a state diagram for removing moisture and impurities by gas heat treatment or plasma treatment in the present invention.

2 is a state in which a buffer layer polymer is deposited on a flexible substrate in the present invention.

3 is a state in which the ITO thin film deposited on the buffer layer polymer in the present invention.

<Explanation of symbols for the main parts of the drawings>

(10)-flexible substrate

(20)-buffer layer polymer

30--ITO thin film

Claims (8)

Preparing a flexible substrate 10 used when forming a transparent electrode of a touch screen or a display; Heat treatment or plasma treatment with N 2 , H 2 or NH 3 gas to remove moisture and impurities of the flexible substrate 10; Depositing about 250 ° C. heat resistant buffer layer polymer 20 on the heat treated or plasma treated flexible substrate 10; Depositing an ITO thin film (30) on the buffer layer polymer (20); Polymer formation method and transparent electrode ITO formation method of a flexible substrate used for a touch screen. The method according to claim 1; Gas heat treatment or plasma treatment, a). Reaction gas N 2 , H 2 Or NH 3 30sccm to 1000sccm of gas each, b). The temperature of the reactor is maintained at 25 ℃ ~ 100 ℃, c). The reactor pressure is maintained at 0.1torr ~ 3torr, d). The method of forming a polymer and a transparent electrode ITO for a flexible substrate used in a touch screen, characterized in that the RF power is treated under the condition of maintaining plasma power at 20Watt ~ 10kWatt. The method according to claim 1 or 2; Buffer layer polymer deposition, a). Ar gas is used as the reaction gas 30sccm ~ 2000sccm, b). RF power is kept from 20Watt to 1kWatt, c). The pressure in the reactor is maintained at 10 -6 torr to 1 torr, d). A method of forming a polymer and a transparent electrode ITO for a flexible substrate used in a touch screen, characterized in that the temperature of the reactor is deposited under conditions performed at room temperature. The method according to claim 1 or 2; ITO thin film deposition, a). Ar, O 2 gas is used as the reaction gas 30sccm ~ 1000sccm, respectively, b). The temperature of the reactor is carried out at room temperature, c). The reactor pressure is maintained at 10 -6 torr to 1 torr, d). RF power is 20Watt ~ 10kWatt, the method of forming a polymer and a transparent electrode ITO formation of a flexible substrate used in a touch screen, characterized in that the deposition is maintained on the condition. The method according to claim 1 or 2; Polymer is a method of forming a polymer and a transparent electrode ITO of a flexible substrate used in a touch screen, characterized in that the Teflon, acrylic series, urethane series. The method according to claim 1 or 2; Flexible substrate is a method of forming a polymer and a transparent electrode ITO of the flexible substrate used in the touch screen, characterized in that any one of PET, PC, PI, PES, PE. The method according to claim 1 or 2; A method for forming a polymer and a transparent electrode ITO for a flexible substrate used in a touch screen, wherein the processing of the flexible substrate, the ITO thin film deposition, and the polymer deposition are performed in a spotter. A method of forming a polymer and a transparent electrode ITO for a flexible substrate for use in a touch screen, characterized in that the present invention is applied to a touch screen and a flexible display substrate.
KR1020090043045A 2009-05-18 2009-05-18 Flexible subsrrates are used in touch screen on the way to formation of polymer formation and transparent ito electrode KR20100124016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020090043045A KR20100124016A (en) 2009-05-18 2009-05-18 Flexible subsrrates are used in touch screen on the way to formation of polymer formation and transparent ito electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090043045A KR20100124016A (en) 2009-05-18 2009-05-18 Flexible subsrrates are used in touch screen on the way to formation of polymer formation and transparent ito electrode

Publications (1)

Publication Number Publication Date
KR20100124016A true KR20100124016A (en) 2010-11-26

Family

ID=43408382

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090043045A KR20100124016A (en) 2009-05-18 2009-05-18 Flexible subsrrates are used in touch screen on the way to formation of polymer formation and transparent ito electrode

Country Status (1)

Country Link
KR (1) KR20100124016A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101133250B1 (en) * 2009-09-29 2012-04-05 부산대학교 산학협력단 manufacturing mathod of transparency electrode using polymer substrate atmosphere plasma treated
KR101160845B1 (en) * 2011-08-23 2012-06-29 주식회사 나우테크 Method for manufacturing metal oxide based transparency electrode
US9569020B2 (en) 2012-07-30 2017-02-14 Samsung Display Co., Ltd. Flexible touch screen panel
US9696834B2 (en) 2013-02-19 2017-07-04 Samsung Display Co., Ltd. Touch screen panel and fabricating method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101133250B1 (en) * 2009-09-29 2012-04-05 부산대학교 산학협력단 manufacturing mathod of transparency electrode using polymer substrate atmosphere plasma treated
KR101160845B1 (en) * 2011-08-23 2012-06-29 주식회사 나우테크 Method for manufacturing metal oxide based transparency electrode
US9569020B2 (en) 2012-07-30 2017-02-14 Samsung Display Co., Ltd. Flexible touch screen panel
US9696834B2 (en) 2013-02-19 2017-07-04 Samsung Display Co., Ltd. Touch screen panel and fabricating method thereof

Similar Documents

Publication Publication Date Title
US12037248B2 (en) Method for producing a graphene film
WO2014169601A1 (en) Method for fabricating low temperature polysilicon, low temperature polysilicon thin film, and thin film transistor
TWI667364B (en) A part for semiconductor manufacturing with sic deposition layer and manufacturing method the same
US9508859B2 (en) TFT array substrate and manufacturing method of the same
KR20100124016A (en) Flexible subsrrates are used in touch screen on the way to formation of polymer formation and transparent ito electrode
CN109065581B (en) Flexible substrate, preparation method thereof and array substrate
TW201528524A (en) Thin film transistor, method of manufacturing thereof, and application thereof
TWI615278B (en) Surface-tensioned sapphire plate
CN104035637A (en) Manufacturing technology of OGS touch screen
CN101445958A (en) Silicon crystallization method
KR20200052774A (en) Polymer formation of flexible substrate and method of forming transparent electrode electrode
JP5170788B2 (en) New metal nitrogen oxide process
KR100773123B1 (en) method for forming silicon film by two step deposition
EP3220414B1 (en) Method for polycrystalline oxide thin-film transistor array substrate
CN104409362A (en) Manufacturing method and device for thin film transistor and array substrate
KR20110083334A (en) Flexible ito film for touch screen panel including buffer layer and manufacturing method of the same
KR20200139090A (en) Fabrication method of perovskite solar cell absorbing layer by chemical vapor deposition
TW201615882A (en) Preparation methods of a titanium oxide film and a composite film comprising the same
CN102383197B (en) Method for processing substrates with process gas
TW201425631A (en) Manufacturing method of aluminum film
CN106206745B (en) Manufacturing method of high-mobility metal oxide TFT
KR101268910B1 (en) Cvd sic coating method for element to be coated
CN107437501A (en) A kind of grid structure and its manufacture method
KR101060994B1 (en) Method for manufacturing ito thin film with high-transmittance
TWI543262B (en) Method for manufacturing barrier layer, semiconductor device and method for manufacturing the same

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
NORF Unpaid initial registration fee