KR20100121984A - Gas supply structure for substrate treatment device - Google Patents

Abstract

PURPOSE: A gas supply device is provided to improve substrate processing performance by uniformly spraying gas onto a chamber, thereby forming uniform plasma. CONSTITUTION: A plurality of gas supply parts are formed in order to supply gas to the inside of a chamber(20). A distribution path is formed in the circumference of the chamber in a columnar direction. A plurality of spray holes(33,43) are connected to the inside of the chamber in the path and gas is sprayed. A plurality of injection holes supplies gas to the inside of the path.

Description

Gas supply structure for substrate treatment device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to equipment for manufacturing semiconductors or flat panel displays, and more particularly, to a gas supply apparatus for a substrate processing apparatus for processing a substrate (wafer) using plasma.

BACKGROUND OF THE INVENTION In a manufacturing process of a semiconductor or flat panel display device, a method using a plasma is widely used in a unit process such as dry etching, physical or chemical vapor deposition, photoresist cleaning, and other surface treatment in a manufacturing process of a wafer or a substrate.

Here, the substrate processing apparatus using the plasma supplies a reaction gas or the like into the chamber to deposit a thin film or the like when forming the plasma.

FIG. 1 schematically shows a configuration of a general substrate processing apparatus. Referring to this, a chamber 11 in which a substrate (wafer) processing process is performed, and a substrate support on which a substrate S is positioned on an upper surface of the chamber 11 is disposed. (12), the gas injection means 13 which supplies a raw material to the upper part of the board | substrate support 12 is comprised.

The upper part of the chamber 11 may be sealed by the dielectric plate 14, and the RF antenna 15 is installed on the upper part of the dielectric plate 14. The RF antenna 15 is connected to the RF power source 17, and a matching circuit 16 for impedance matching is installed between the RF antenna 15 and the RF power source 17.

As illustrated, the gas injection means 13 may include a plurality of injection holes symmetrically installed along the chamber sidewall. Of course, the lower part of the dielectric plate 14 may be configured by a showerhead method.

However, the gas supply structure of the substrate processing apparatus as described above is configured in such a manner that a plurality of injection holes 13b are formed in one gas supply portion 13a, so that one or two gases can be injected. Therefore, there is a problem that the injection pressure is not made uniformly when the gas is injected into the chamber.

That is, the gas pressure injected from the injection hole 13b located at the gas introduction part 13a in the gas injection means 13 is relatively high, and is injected from the injection hole 13b located far from the gas introduction part 13a. Since the gas pressure is relatively low, when the gas is injected into the chamber in this state, there is a problem that the plasma density becomes uneven during plasma formation, and thus the substrate processing performance may be degraded.

The present invention has been made in order to solve the above problems, by separating the gas supply portion leading to the chamber into the injection passage and the distribution passage, as well as configured to be uniformly sprayed through the injection hole to form a uniform plasma It is an object of the present invention to provide a gas supply apparatus of a substrate processing apparatus that can make it possible to improve substrate processing performance.

It is also an object of the present invention to provide a gas supply apparatus of a substrate processing apparatus that enables uniform cross injection of a plurality of gases of the present invention.

In the gas supply apparatus of the substrate processing apparatus which concerns on this invention for realizing the said subject, the some gas supply part is formed so that each gas can be supplied to the inside of a chamber, and each said gas supply part is a circumferential direction around a chamber. A distribution passage formed with; A plurality of injection holes connected to the inside of the chamber in the distribution passage and injecting the gas provided in the distribution passage; A plurality of injection holes for supplying gas to the inside of the distribution passage from the outside of the distribution passage is formed, the injection holes are characterized in that it comprises an injection portion disposed at equal intervals.

Here, the distribution passages of the respective gas supply units are preferably arranged in a multi-hole structure on the inside and the outside on the same plane.

The injection holes of the gas supply units are preferably arranged at uniform intervals on the same plane.

The injection holes of different gas supply units are preferably arranged alternately with each other.

Preferably, the injection portions of the gas supply units are formed of two injection holes each having a 180 degree phase difference, and the injection holes are configured to be interconnected by one injection passage.

The gas supply unit may be composed of two, and each gas supply unit may be formed of two injection holes having a 180 degree phase difference, and the injection holes of different gas supply units may be arranged to have a 90 degree phase difference.

In addition, the injection portion, it is preferable that a plurality of injection holes are interconnected through one injection passage, the distribution passage and the injection passage of each gas supply portion is formed to have a multi-layer passage structure.

The chamber is composed of a lower body and an upper body coupled to an upper portion of the lower body, and each of the gas supply units is preferably configured on a surface to which the lower body and the upper body are coupled to each other.

In this case, at least one of the two bodies is formed with a passage forming groove having a circular ring structure to form the gas supply portion, and the passage forming ring is inserted into the passage forming groove so that the distribution passage and the passage constituting the injection portion are separated. It is preferred to be configured.

It is preferable that the passage forming ring is seated in the passage forming groove so that a ring seating jaw is formed to distinguish the passage between the distribution passage and the injection portion.

The injection portion is a plurality of injection holes are interconnected through one injection passage, the passage forming ring, the portion constituting the injection passage so as to form the injection passage between the two body is relatively thinner than the other portion It is preferable that the injection holes are formed in the portion where the thickness is thin.

In addition, the gas supply apparatus of the substrate processing apparatus according to the present invention for realizing the above problems, the gas supply unit is formed so as to supply gas into the chamber, respectively,

The gas supply unit includes a distribution passage formed in the circumferential direction around the chamber; A plurality of injection holes connected to the inside of the chamber in the distribution passage and injecting the gas provided in the distribution passage; An injection passage formed in a layer different from the distribution passage and into which gas is introduced from the outside of the chamber; A passage forming ring inserted into the circular groove formed in the chamber to form the distribution passage and the injection passage separately; Is formed in the passage forming ring to supply gas into the distribution passage from the injection passage, it characterized in that it comprises a plurality of injection holes arranged at equal intervals.

In the gas supply apparatus of the substrate processing apparatus according to the present invention, since the gas supply portion leading into the chamber is divided into an injection passage and a distribution passage, each of the injection holes is configured to allow cross injection, and thus, the gas supply apparatus of the substrate processing apparatus according to the present invention is capable of supplying one or more kinds of gases. It is possible to spray uniformly in the chamber, thereby enabling uniform plasma formation, thereby improving the substrate processing performance.

Prior to describing a preferred embodiment of the present invention, the number of gas supply units constituting the gas supply apparatus of the present invention may be variously configured in one or more numbers depending on the number of supply gas and the distribution design conditions of the supply gas. However, in the embodiments described below, two gas supply units will be described. In this case, the two gas supply units may supply different kinds of gases, respectively. For example, in the case of semiconductor manufacturing equipment, the process gas and the source gas may be separately supplied.

Referring now to the accompanying drawings will be described a preferred embodiment of the present invention.

2 is a partially cutaway perspective view showing a substrate processing apparatus including a gas supply device according to the present invention.

As illustrated in FIG. 2, the substrate treating apparatus according to the present invention may be a semiconductor manufacturing apparatus that performs a chemical vapor deposition process on a wafer using plasma.

The chamber 20 constituting the substrate processing apparatus may include a lower body 21 having a cylindrical structure having an open top, and an upper body 22 provided on the lower body 21.

The upper body 22 may be composed of a lid (Lid) that can be opened and closed from the lower body 21, reference numeral 23 provided in the upper body 22 may be a dielectric plate, the dielectric plate 23 The antenna may be located at the top.

The gas supply device according to the present invention is configured on the surface where the upper body 22 and the lower body 21 are coupled to each other. In the accompanying drawings, an embodiment of the present invention will be described based on the gas supply device formed on the upper body 22 side. Of course, although not illustrated in the drawings, it is also possible to configure the lower body 21 in the same structure.

In FIG. 2, reference numeral 25 denotes sealing materials mounted between two bodies 21, 22 to prevent gas leakage.

Such a gas supply device of the present invention will be described in more detail with reference to FIGS.

3 to 7 are views for explaining the gas supply apparatus according to the present invention in more detail, Figure 3 is a plan perspective view, Figure 4 is a perspective view of the bottom direction, Figure 5 is an exploded perspective view of the bottom direction, Figure 6 and Figure 7 is a cross-sectional view taken along line AA and line BB in FIG. 3. For reference, FIGS. 6 and 7 are made the same as the cross-sectional structure of FIG.

The gas supply unit illustrated in the embodiment of the present invention is composed of two first gas supply unit 30 and the second gas supply unit 40, each gas supply unit 30, 40 is made of the same or similar configuration as a whole Since the two gas supply parts 30 and 40 are described together, the mutual arrangement structure of the first gas supply part 30 and the second gas supply part 40 will be described first.

Each gas supply part 30, 40 has a distribution passage 31, 41 formed in a circumferential direction on the inner circumference of the upper body 22, and the distribution passage 31, 41 of the chamber 20. A plurality of injection holes 33 and 43 connected inwardly to inject the gas provided from the distribution passages 31 and 41, respectively, and the distribution passages 31 and 41 outside the distribution passages 31 and 41. It is composed of an injection section consisting of a plurality of injection holes (37, 47) and injection passages 35, 45 for supplying gas into the interior of the.

Here, the upper body 22 is formed in each of the passage forming grooves 51, 55 of the circular ring structure to form each gas supply unit 30, 40, respectively, in the passage forming grooves 51, 55 Passage forming rings 61 and 62 are fitted respectively to separate the distribution passages 31 and 41 and the injection passages 35 and 45, thereby distributing the distribution passages 31 and 41 and the injection passage 35. It is preferable that 45 is configured to have a multilayer passage structure.

At this time, the passage forming grooves 51 and 55 are seated in the passage forming rings 61 and 62 so as to separate the distribution passages 31 and 41 from the injection passages 35 and 45. It is preferable that 52) 56 be formed.

In particular, the passage forming rings (61, 62), referring to Figure 5, the injection passage (35, 45) to form the injection passage (35, 45) between the two bodies (21, 22) The portion X constituting) is relatively thinner than the other portion Y, and the injection holes 37 and 47 are formed in the thin portion X.

That is, each injection portion is configured such that the two injection holes 37, 47 are interconnected through one injection passage 35, 45, a relatively thin portion as shown in Figs. (X) forms a space between the upper surface of the lower body 21 to form the injection passage (35) (45), the relatively thick portion (Y) is in close contact with the lower body 21 It does not form a passage.

Of course, the upper portions of the passage forming rings 61 and 62 are all formed at the same height, thereby forming the distribution passages 31 and 41.

In addition, the two injection holes 37 and 47 constituting each injection unit are disposed to have a 180 degree phase difference. Therefore, the injection passages 35 and 45 are formed to extend in a section of 180 degrees or more in the whole circle, and are configured to interconnect the two injection holes 37 and 47.

As such, two injection holes 37 and 47 of each injection unit are formed to have a phase difference of 180 degrees, so that the pressure of the gas injected into the distribution passages 31 and 41 can be more uniformly injected.

At this time, the gas supply passages 39 and 49 for supplying gas to the injection passages 35 and 45 are arranged to be connected to the center portions of both injection holes 37 and 47 of each injection column, referring to FIG. 3. It is desirable to be.

Meanwhile, in the above, the case where two injection holes 37 and 47 are formed in each gas supply part 30 and 40 is illustrated. However, when three injection holes 37 and 47 are formed, each injection is performed. The holes are formed at intervals of 120 degrees, and when four are formed, the holes may be formed at intervals of 90 degrees. Of course, the injection passages 35 and 45 are preferably configured to connect all the injection holes formed in each gas supply unit to each other.

As described above, each of the injection holes 37 and 47 is preferably arranged at equal intervals with respect to the distribution passages 31 and 41 so that the injection holes 37 and 47 can be injected and supplied with a uniform pressure.

The distribution passages 31 and 41 are preferably configured to be continuously connected to the upper body 360 degrees without a broken section, but are not necessarily limited to such a structure, and both injection holes 37 of each injection portion as necessary. It is also possible to form the structure which is blocked symmetrically at the position between (47).

The injection holes 33 and 43 connected to the inside of the chamber 20 in the distribution passages 31 and 41 are separately configured with nozzle tips 33a and 43a in a portion where gas is injected, as shown in the drawing. Can be.

As described above, each gas supply unit 30 and 40 has a gas supply line 39 and 49 connected to a central portion of the injection passages 35 and 45 connected slightly longer than the 180 degree section, respectively. Injection holes 37 and 47 are formed in both of the injection passages 35 and 45 so as to have a phase difference of 180 degrees. In addition, the dispensing passages 31 and 41 are formed without a portion cut 360 degrees apart from the injecting passages 35 and 45, and at regular intervals in the dispensing passages 31 and 41 to the inside of the chamber 20. The installed injection holes 33 and 43 are connected to each other. In the figure, the injection holes 33 and 43 of each gas supply part 30 and 40 show a configuration in which all eight are formed one by one at 45 degree intervals.

Now, the mutual arrangement structure of the two gas supply units 30 and 40 configured as described above will be described.

As illustrated in the figure, the distribution passages 31 and 41 of the first gas supply unit 30 and the second gas supply unit 40 are preferably arranged in a multi-hole structure on the inside and outside on the same plane.

In this case, the injection holes 33 and 43 of the gas supply units 30 and 40 are all disposed on the same plane at equal intervals, and the injection holes 33 and 43 are alternately arranged to each other. It is preferred to be configured. This is because different types of gases may be uniformly sprayed and mixed, and even if only one type of gas is sprayed to satisfy the uniform spraying conditions.

To this end, as shown in FIGS. 6 and 7, the dispensing passage 31 of the first gas supply unit 30 located inside the spray hole is connected to the distribution passage 41 of the second gas supply unit 40. 43) The distribution passage 41 of the second gas supply portion 40, which is formed relatively low so as not to interfere with the formation, is formed relatively high. However, the injection holes 33 and 43 connected to each of the distribution passages 31 and 41 are preferably formed to be sprayed at the same height.

The two gas supply parts 30 and 40 are formed such that the two injection holes 37 and 47 have a phase difference of 180 degrees. In this case, the injection holes 37 of the different gas supply parts 30 and 40 are different from each other. 47 is preferably arranged to have a 90 degree phase difference as shown in the figure. Of course, it is preferable that the injection passages 35 and 45 of each gas supply part 30 and 40 are also arrange | positioned so that it may have a 90 degree phase difference.

On the other hand, in the above described the case where two gas supply unit is configured, it is also possible to configure only one gas supply unit according to the implementation conditions.

That is, when only the first gas supply unit 30 is formed, one distribution passage 31 in the chamber 20, a plurality of injection holes 33 connected to the distribution passage 31, and different from the distribution passage 31 are provided. The injection passage 35 formed in the layer, the distribution passage 31 and the passage formation ring 61 which is formed by dividing the injection passage 35, and the injection hole 37 formed in the passage formation ring 61 can be configured. have.

In the above-described embodiment of the present invention, the substrate processing apparatus, which is one of the semiconductor manufacturing equipments, has been described by way of example, but the present invention is not limited thereto.

The technical idea described in the above-described embodiments of the present invention may be implemented independently, or may be implemented in combination with each other. While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications, and variations will be apparent to those skilled in the art. It is possible. Therefore, the technical protection scope of the present invention will be defined by the appended claims.

1 is a schematic configuration diagram showing a conventional substrate processing apparatus.

2 is a partially cutaway perspective view of a substrate processing apparatus equipped with a gas supply apparatus according to the present invention.

3 is a plan perspective view of a gas supply device according to the present invention.

Figure 4 is a perspective view of the bottom direction of the gas supply device according to the present invention.

5 is an exploded perspective view of the bottom direction of the gas supply device according to the present invention.

6 is a cross-sectional view taken along the line A-A of FIG. 3.

7 is a cross-sectional view taken along the line B-B in FIG. 3.

Claims (12)

A plurality of gas supply unit is formed to supply gas to the inside of the chamber, Each gas supply unit, A distribution passage formed in the circumferential direction around the chamber; A plurality of injection holes connected to the inside of the chamber in the distribution passage and injecting the gas provided in the distribution passage; A plurality of injection holes are formed to supply gas into the distribution passage, the injection holes being arranged at equal intervals with respect to the distribution passage and being connected to each other by one injection passage; Gas supply apparatus for a substrate processing apparatus, comprising a. The method according to claim 1, The distribution passages of the respective gas supply units are arranged in a multi-hole structure on the inside and the outside on the same plane gas supply apparatus of the substrate processing apparatus. The method according to claim 1, The gas supply apparatus of the substrate treating apparatus, wherein the injection holes of the gas supply units are disposed at equal intervals on the same plane. The method according to claim 1, The gas supply apparatus of the substrate treating apparatus, wherein the injection holes of different gas supply units are alternately arranged. The method according to claim 1, The gas supply unit of the substrate processing apparatus, wherein the injection portions of each gas supply unit are formed of two injection holes having a 180 degree phase difference, and are connected to each other by one injection passage. The method according to claim 1, The gas supply unit is composed of two, The injection holes of each gas supply part are formed of two having a 180 degree phase difference, Injecting holes of different gas supply units are disposed so as to have a phase difference of 90 degrees. The method according to claim 1, And a distribution passage and an injection passage of each gas supply unit are formed to have a multilayer passage structure in the chamber. The method according to claim 1, The chamber consists of a lower body and an upper body coupled to the upper portion of the lower body, Each gas supply unit is a gas supply device of the substrate processing apparatus, characterized in that the lower body and the upper body is configured on the surface coupled to each other. The method according to claim 8, At least one of the two bodies is formed with a passage forming groove of the circular ring structure to form the gas supply, And a passage forming ring is inserted into the passage forming groove so that the distribution passage and the injection passage are separated from each other. The method according to claim 9, And a ring seating jaw is formed in the passage forming groove so that the passage forming ring is seated to separate the distribution passage and the injection passage. The method according to claim 9, The passage forming ring is a substrate, characterized in that the portion constituting the injection passage is formed relatively thinner than the other portion to form the injection passage between the two bodies, the injection hole is formed in the thin portion Gas supply to the processing unit. The gas supply unit is formed to supply gas into the chamber, respectively, The gas supply unit, A distribution passage formed in the circumferential direction around the chamber; A plurality of injection holes connected to the inside of the chamber in the distribution passage and injecting the gas provided in the distribution passage; An injection passage formed in a layer different from the distribution passage and into which gas is introduced from the outside of the chamber; A passage forming ring inserted into the circular groove formed in the chamber to form the distribution passage and the injection passage separately; And a plurality of injection holes formed in the passage forming ring to supply gas into the distribution passage from the injection passage, the plurality of injection holes being arranged at equal intervals.

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