KR20100116749A - Thermoelectric module and manufacturing method of it - Google Patents

Abstract

PURPOSE: A thermoelectric module and a manufacturing method thereof are provided to remarkably reduce the manufacturing cost by simplifying the manufacturing process by reducing the thickness of the P-type semiconductor and the N-type semiconductor. CONSTITUTION: A top substrate(110) and a bottom substrate forming the top and bottom surfaces emit or absorb the heat. The electrode is provided on one surface of the top or bottom substrates to guide the flow of the supplied power. A plurality of P-type semiconductors and N-type semiconductors are separated between the electrodes.

Description

Thermoelectric module and manufacturing method thereof {Thermoelectric module and Manufacturing method of it}

1 is a longitudinal sectional view showing a configuration of a thermoelectric module according to the prior art.

Figure 2 is a longitudinal sectional view showing the internal configuration of the thermoelectric module according to the present invention.

Figure 3 is an exploded perspective view schematically showing the structure of the injection mold used in the manufacture of the thermoelectric module according to the present invention.

4 is a flowchart illustrating a method of manufacturing a thermoelectric module according to the present invention.

Figure 5 is a flow chart showing in detail the semiconductor forming step is a step in the method of manufacturing a thermoelectric module according to the present invention.

Figure 6 is a longitudinal cross-sectional view showing a mold loading process of the semiconductor forming step, which is one step in the method of manufacturing a thermoelectric module according to the present invention.

Figure 7 is a longitudinal sectional view showing a slurry injection process of the semiconductor forming step, which is one step in the method of manufacturing a thermoelectric module according to the present invention.

8 is a longitudinal sectional view showing a thickness correction process in a semiconductor forming step which is one step in the method of manufacturing a thermoelectric module according to the present invention.

Figure 9 is a longitudinal cross-sectional view showing a mold opening process of the semiconductor forming step that is one step in the method of manufacturing a thermoelectric module according to the present invention.

10 is a longitudinal sectional view showing a substrate withdrawal process during the semiconductor forming step which is one step in the method of manufacturing a thermoelectric module according to the present invention.

11 is a plan view showing an appearance of a substrate on which a semiconductor forming step is completed in a method of manufacturing a thermoelectric module according to the present invention;

12 is a longitudinal sectional view schematically showing a module forming step in a method of manufacturing a thermoelectric module according to the present invention.

Explanation of symbols on the main parts of the drawings

100. Thermoelectric Module 110. Upper Board

120. Lower substrate 130. Electrode

132. Upper electrode 134. Lower electrode

140.P type semiconductor 150.N type semiconductor

200. Injection mold 220. Fixed side mold

222. Slurry flow hole 240. Moving side mold

242. Molding space 260. Cutting mold

262. Semiconductor formation hole S100. Powder manufacturing step

S200. Hydrogen reduction step S300. Slurry stage

S400. Electrode formation step S500. Semiconductor Formation Step

S520. Mold loading process S540. Slurry Injection Process

S560. Thickness correction process S580. Mold Opening Process

S590. Substrate Withdrawal Process S600. Module formation stage

The present invention relates to a thermoelectric module and a method for manufacturing the same, and more particularly, to a thermoelectric module and a method of manufacturing the P-type semiconductor or N-type semiconductor on one surface of the substrate (Insert) inserted into the injection mold to form a thin film. It is about.

Thermoelectric modules have two main applications: power generation using Seeback effect or cooling using Peltier effect.

The Seebeck effect occurs when electromotive force occurs when the temperature difference between both ends is used, and it is used as a power source for small electronic devices (eg, clocks) using waste heat generation or body temperature, and a space probe using radiation half-heat.

On the contrary, when the current flows through both ends, the heat moves along the charge, so that one side is cooled and the other side is heated, which is called the Peltier effect.

Cooling using the thermoelectric module is much lower than the conventional compressor type cooler in terms of overall cooling efficiency, but has relatively low mechanical noise, very accurate temperature control, and short response response time. 10 ° C.) It is widely used in oil or small refrigerators because of its relatively high cooling efficiency.

Hereinafter, a configuration of a thermoelectric module according to the related art will be described with reference to the accompanying drawings.

1 is a longitudinal cross-sectional view showing the configuration of a thermoelectric module according to the prior art.

As shown in the figure, an upper substrate 11 and a lower substrate 12 are provided on the upper and lower surfaces of the thermoelectric module 10. The upper substrate 11 and the lower substrate 12 serves to release or endotherm heat, and are maintained at a distance up and down by a predetermined distance.

An N-type semiconductor 15 and a P-type semiconductor 16 are provided between the upper substrate 11 and the lower substrate 12. The N-type semiconductor 15 and the P-type semiconductor 16 are elements formed so that the thermoelectric material has a predetermined size in a predetermined shape and are alternately disposed between the upper substrate 15 and the lower substrate 16.

A connecting lead 17 is provided between the N-type semiconductor 15 and the P-type semiconductor 16 and the upper substrate 11. The connecting lead 17 is configured to connect the N-type semiconductor 15 and the P-type semiconductor 16.

The metal layer 25 is provided below the connection lead 17. The metal layer 25 is to prevent the atoms moving from the connecting wire 17 to the N-type semiconductor 15 and the P-type semiconductor 16, the metal layer 25 is formed of nickel, phosphorus or It will contain a small amount of boron.

That is, the metal layer 25 is to be stabilized by blocking the degradation of the thermoelectric properties, the metal layer 25 is coated on the connection lead.

A barrier layer 27 is provided between the N-type semiconductor 15 and the P-type semiconductor 16. The barrier layer 27 is for preventing the N-type semiconductor 15 and the P-type semiconductor 16 from being contaminated from the solder layer 26 to be described below.

A soldering layer 26 is provided between the metal layer 25 and the barrier layer 27. The solder layer 26 is configured to keep the metal layer 25 and the barrier layer 27 bonded to each other.

N contacts 20 and P contacts 21 are provided on the bottom surface of the solder layer 26 located below the solder layer 26, respectively.

The N contact 20 and the P contact 21 are attached to the lower surface of the N-type semiconductor 15 and the P-type semiconductor 16 while being spaced apart from each other, and the N-type semiconductor 15 and the P-type. It serves to supply power to the semiconductor 16.

However, the thermoelectric module 10 configured as described above has the following problems.

That is, a soldering layer 26 is provided on the upper and lower sides of the N-type semiconductor 15 and the P-type semiconductor 16. The solder layer 26 is configured to fix the N-type semiconductor 15 and the P-type semiconductor 16 to the upper substrate 11 and the lower substrate 12.

Therefore, since the thermoelectric module 10 includes human harmful substances, it is not preferable for the safety of the operator.

In addition, as the solder layer 26 is provided, the barrier layer 27 must be inevitably formed.

Therefore, there is a problem that the thickness of the thermoelectric module 10 becomes thick, and the number of processes increases so that the defective rate rapidly increases.

In addition, the soldering (Soldering) process for forming the solder layer 26 is required because a lot of time to reduce the productivity, it is not preferable because it is a factor that increases the price of the thermoelectric module 10.

In addition, the Korean Patent Office Patent Registration No. 0721925 forms a dense and continuous conductive layer between the thermoelectric element and the electrode when bonding the low-temperature electrode of the thermoelectric module, and connects the external terminal to the electrode using a conductive adhesive "Method for manufacturing a thermoelectric module" is published.

However, when manufacturing a thermoelectric module using the conventional technology, a conductive adhesive should be further provided separately, and it takes a lot of time to attach the thermoelectric element and the electrode with the conductive adhesive, so there is a problem in that productivity is lowered.

SUMMARY OF THE INVENTION An object of the present invention is to provide a thermoelectric module in which P-type semiconductors or N-type semiconductors are injection molded on one surface of a substrate inserted into an injection mold, and a method of manufacturing the same.

It is another object of the present invention to provide a thermoelectric module manufacturing method in which productivity is improved by cutting a P-type semiconductor and an N-type semiconductor to have a thin thickness after injection molding.

The thermoelectric module according to the present invention for achieving the object as described above, the upper substrate and the lower substrate to form an upper / lower surface to generate heat or endotherm, and the power of the power supply is provided on one surface of the upper substrate and the lower substrate And a plurality of P-type semiconductors and N-type semiconductors spaced between the electrodes to guide the flow, wherein any one of the P-type semiconductors and the N-type semiconductors is inserted into the injection mold with the electrodes formed. (Insert) characterized in that the injection molded on the upper substrate or the lower substrate.

The electrode may be formed of silver (Ag) or copper (Cu).

The P-type semiconductor and the N-type semiconductor are characterized in that formed by injection molding a slurry (slurry) mixed with the thermal powder and the organic solvent.

The P-type semiconductor and the N-type semiconductor are sintered by heat and pressure to be attached to the electrode.

In the method of manufacturing a thermoelectric module according to the present invention, an electrode forming step of forming an upper electrode or a lower electrode on one surface of an upper substrate or a lower substrate forming a part of an exterior of the thermoelectric module, and P on one surface of the upper electrode or the lower electrode And a module forming step of forming a thermoelectric module by bonding the upper substrate and the lower substrate to form a semiconductor or N-type semiconductor, wherein the semiconductor forming step includes one side of the upper electrode or the lower electrode. It is characterized in that the process of forming a P-type semiconductor or N-type semiconductor by injecting a slurry (slurry) mixed with a thermal starch powder and an organic solvent.

The electrode forming step includes a process of forming an upper electrode on a lower surface of the upper substrate, and a process of forming a lower electrode on an upper surface of the lower substrate, wherein the upper electrode and the lower electrode are formed at positions where portions of the upper electrode overlap each other. It features.

The semiconductor forming step includes a mold loading process of inserting an upper substrate or a lower substrate on which the upper electrode or the lower electrode is formed into an injection mold, and injecting a slurry into the injection mold to form a P-type semiconductor or an N-type semiconductor. A slurry injection process for forming a mold, a thickness correction process for cutting an injected slurry by a predetermined thickness, a mold opening process for opening an injection mold, and an upper substrate or a lower substrate to which a slurry is attached from inside an open injection mold. Characterized in that the substrate withdrawal process to withdraw the substrate.

In the module forming step, the organic solvent contained in the slurry is characterized in that it is removed.

In the module forming step, the other end of the slurry is attached to the lower substrate and the upper substrate, one end is attached to the upper substrate and the lower substrate, respectively.

Prior to the electrode forming step, a powder manufacturing step of preparing a thermal starch powder that will constitute a P-type semiconductor and an N-type semiconductor, a hydrogen reduction step of hydrogen reduction of the pulverized thermal starch powder, and a thermal starch powder undergoing the hydrogen reduction step It is characterized in that the slurry step of slurrying by mixing with the organic solvent.

The mold loading process, the slurry injection process, and the thickness correction process are each performed at the time of forming a P-type semiconductor and an N-type semiconductor.

According to the present invention having such a configuration, the thermoelectric module can be mass-produced at a low manufacturing cost, and there is an advantage in that it can be thinned.

Hereinafter, a configuration of a thermoelectric module according to the present invention will be described with reference to FIG. 2.

Figure 2 is a longitudinal sectional view showing the internal configuration of the thermoelectric module according to the present invention.

As shown in the figure, the thermoelectric module 100 according to the present invention is formed on the upper and lower surfaces by the upper substrate 110 and the lower substrate 120. The upper substrate 110 and the lower substrate 120 are formed of a material having thermal conductivity and a certain strength or more as it generates heat or endothermic reaction when power is applied to the thermoelectric module 100.

Electrodes 130 are provided on the lower surface of the upper substrate 110 and the upper surface of the lower substrate 120. The electrode 130 guides the flow of the power when power is applied to the thermoelectric module 100, and the upper electrode 132 and the lower substrate 120 contacting the lower surface of the upper substrate 110. It comprises a lower electrode 134 in contact with the upper surface of the.

The upper electrode 132 and the lower electrode 134 are formed of a material having high electrical conductivity in order to minimize the loss of power supplied to the thermoelectric module 100. More specifically, it is preferable to be formed of a material having excellent conductivity such as silver (Ag) or copper (Cu).

In addition, one surface of each of the upper electrode 132 and the lower electrode 134 is provided so that the P-type semiconductor 140 and the N-type semiconductor 150 will be spaced one by one.

In more detail, the P-type semiconductor 140 is provided on the left side of the lower surface of the upper electrode 132, and the N-type semiconductor 150 is provided at a position spaced to the right from the P-type semiconductor 140.

An N-type semiconductor 150 is provided on the left side of the upper surface of the lower electrode 134, and a P-type semiconductor 140 is provided at a position spaced to the right from the N-type semiconductor 150.

Therefore, when power is supplied to the upper electrode 132 and the lower electrode 134, the upper substrate 110 and the lower substrate 120 are connected to each other so that the P-type semiconductor 140 and the N-type semiconductor 150 are connected. Allows electrical series.

The P-type semiconductor 140 and the N-type semiconductor 150 are provided between the upper electrode 132 and the lower electrode 134. The P-type semiconductor 140 and the N-type semiconductor 150 are formed by sintering a slurry formed by mixing a thermoelectric powder and an organic solvent having thermoelectric properties, and the P-type semiconductor 140 and the N-type semiconductor ( Since the material of the thermal star powder constituting 150 is a general configuration, a detailed description thereof will be omitted.

The P-type semiconductor 140 and the N-type semiconductor 150 are injection-molded on the upper substrate 110 or the lower substrate 120 on which the upper electrode 132 or the lower electrode 134 is formed.

Hereinafter, a configuration of the injection mold 200 for manufacturing the thermoelectric module 100 configured as described above and a manufacturing method of an embodiment of the thermoelectric module using the same will be described with reference to FIGS. 3 to 9.

The injection mold 200 is installed and fixed in an injection molding machine (not shown), and a slurry formed by mixing a thermal starch powder and an organic solvent therein is injected, thereby forming a plurality of P-type semiconductors 140 or N-type semiconductors 150. The injection mold 200 for forming the P-type semiconductor 140 and the N-type semiconductor 150 in a configuration to be spaced apart is required, respectively.

The injection mold 200 includes a fixed side mold 220 on the left side and a movable side mold 240 on the right side and a cutting mold 260 positioned between the fixed side mold 220 and the movable side mold 240. It is configured by.

The fixed side mold 220 has a plurality of slurry flow holes 222 are formed to be perforated so that the slurry injected from the nozzle (not shown) of the injection molding machine can pass in the right direction, and is in contact with each other without being spaced apart from the nozzle. Will be maintained.

In addition, the movable side mold 240 is configured to linearly reciprocate in the left / right direction and the up / down direction so that the slurry accommodated therein is formed by contacting the upper / lower side of the left and right sides of the cutting mold 260. The N-type semiconductor 150 or the P-type semiconductor 160 can be formed.

To this end, a molding space 242 recessed in the right direction is formed on the left side of the movable side mold 240.

The molding space 242 may accommodate the upper substrate 110 having the upper electrode 132 or the lower substrate 120 having the lower electrode 134 therein to limit the movement of the upper substrate 110 or the lower substrate 120. The recess is formed to have a size corresponding to that of the lower substrate 120.

A cutting mold 260 is provided between the fixed side mold 220 and the movable side mold 240. The cutting mold 260 is configured to cut the slurry injected through the slurry flow hole 222 by linearly reciprocating in the up / down direction from the right side of the fixed side mold 220.

In more detail, in the cutting mold 260, a semiconductor forming hole 262 having a shape and a size corresponding to a cross section of the N-type semiconductor 150 or the P-type semiconductor 140 is formed in a perforation, and the semiconductor shape hole ( 262 corresponds to the number and positions of the N-type semiconductor 150 or the P-type semiconductor 140 to be formed on the upper substrate 110 or the lower substrate 120 in one injection molding.

The semiconductor formation hole 262 is formed to gradually increase in size toward the right side.

Therefore, when the cutting mold 260 and the movable side mold 240 are spaced apart from each other, the slurry located inside the semiconductor forming hole 262 may be attached to the upper electrode 132 or the lower electrode 134. 260 can be easily separated.

Hereinafter, a method of manufacturing a thermoelectric module using the injection mold 200 configured as described above will be described with reference to FIGS. 3 and 4.

4 is a flowchart illustrating a method of manufacturing a thermoelectric module according to the present invention, and FIG. 5 is a flowchart illustrating a semiconductor forming step, which is one step in the method of manufacturing a thermoelectric module according to the present invention.

First, a powder manufacturing step S100 of preparing the upper substrate 110 and the lower substrate 120 and then manufacturing a thermal starch powder to be used for the P-type semiconductor 140 and the N-type semiconductor 150 is performed. The powder manufacturing step (S100) is to be finely ground using a thermal powder ball mill method, it is a preparation process for the electrode forming step (S400) and the semiconductor forming step (S500) to be described below.

The ball mill method is performed by applying a mechanical force of one of compression, shear, impact or a combination thereof to a raw material to be crushed.

And, in the present invention, the thermal starch powder, which has undergone the ball mill method, has a diameter within 2 μm in order to increase the thermoelectric performance.

Thereafter, a hydrogen reduction step (S200) of hydrogen-reducing the finely ground thermal starch powder in the powder manufacturing step (S100) is performed. The hydrogen reduction step (S200) is a process for improving the thermoelectric performance of the thermoelectric powder, and in general, the thermoelectric powder after the hydrogen reduction is improved in the thermoelectric performance than the thermoelectric powder before the hydrogen reduction.

Then, through the hydrogen reduction step (S200), a slurry step (S300) is performed in which a thermoelectric powder having improved thermoelectric performance is mixed with an organic solvent to make a slurry.

The organic solvent used was a material that can be completely removed below the firing temperature of the thermoelectric powder used in the manufacturing of the thermoelectric module 100, the thermoelectric powder was to have a volume ratio of 50% to 95% of the total volume of the slurry. This is because if the ratio of the powder is lower than this, many pores are left inside after sintering, and if the ratio is too high, the flow of the paste becomes bad and injection molding is not easy.

Then, a metal mask (not shown) or metal mesh (not shown) prepared in advance on one surface of the upper substrate 110 or the lower substrate 120, and then, such as ball milled silver or copper An electrode forming step (S400) of forming the electrode 130 by passing the metal powder through a metal mask or a metal mesh is performed.

That is, fine holes are formed in the metal mask or the metal mesh at the position where the electrode 130 is to be formed, and metal powder such as silver or copper passes through the fine holes. By doing so, the upper electrode 132 or the lower electrode 134 is screen printed on one surface of the upper substrate 110 or the lower substrate 120.

Therefore, the metal powder such as silver or copper should be applied in a slurry state mixed with an organic solvent so that the metal powder such as silver or copper may remain attached without being separated from the upper substrate 110 or the lower substrate 120 after screen printing. desirable.

The upper electrode 132 or the lower electrode 134 on which the electrode forming step S400 is completed is spaced at equal intervals as shown in FIG. 11.

Thereafter, the semiconductor forming step (S500) of performing injection molding of the P-type semiconductor 140 or the N-type semiconductor 150 by injection molding the slurry on one surface of the upper electrode 132 or the lower electrode 134 is performed.

That is, the semiconductor forming step (S500) is a P-type semiconductor 140 by using the above-described injection mold 200 on the upper substrate 110 or lower substrate 120, the upper electrode 132 or the lower electrode 134 is formed. ) Or the process of injection molding the N-type semiconductor 150 is configured to include a number of processes.

In other words, the semiconductor forming step S500 may include inserting an upper substrate 110 or a lower substrate 120 having the upper electrode 132 or the lower electrode 134 into the injection mold 200. Process (S520), the slurry injection process (S540) to form a P-type semiconductor 140 or N-type semiconductor 150 by injecting a slurry into the injection mold 200, and cutting the injected slurry by a predetermined thickness A thickness correction process (S560), a mold opening process (S580) for opening the injection mold (200), and an upper substrate (110) or a lower substrate on which the slurry is attached from inside the opened injection mold (200). Substrate withdrawal process (S590) to withdraw (120) is made.

Referring to the semiconductor forming step (S500) with reference to Figures 5 to 10, the mold loading process (S520) is the upper substrate 132 attached to the upper electrode 132 inside the molding space 242 as shown in FIG. In the process of inserting 110, the upper electrode 132 on which the P-type semiconductor 140 or the N-type semiconductor 150 is to be formed is positioned on the left side.

Thereafter, the mold injection mold 200 is closed, and a slurry injection process (S540) for injecting a slurry using the injection molding machine is performed.

In the slurry injection process (S540), the slurry is simultaneously filled with the slurry flow hole 222 and the semiconductor formation hole 262 to obtain a state as shown in FIG. 7.

Thereafter, a thickness correction process (S560) of cutting the slurry by the required thickness of the N-type semiconductor 150 or the P-type semiconductor 140 is performed. In the thickness correction process (S560), the movable side mold 240 and the cutting mold 260 simultaneously move downward to cut the slurry by generating shear force in the slurry, as shown in FIG.

In this case, the slurry filled in the semiconductor formation hole 262 eventually corresponds to the thickness and size of the N-type semiconductor 150 or the P-type semiconductor 140.

Thereafter, the movable side mold 240 is moved to the right to open the molding space 242 to the outside. (The mold opening process: S580)

At this time, the slurry injected into the semiconductor formation hole 262 is attached to the upper electrode 132 by the shape of the semiconductor formation hole 262 formed to gradually increase in the right direction, the semiconductor formation hole 262. Separated from.

Then, when the upper substrate 110 having the slurry and the upper electrode 132 attached thereto is separated from the molding space 242, a portion of the upper electrode 132 spaced apart on the front surface of the upper substrate 10 as shown in FIG. A slurry is formed.

According to the above process, the semiconductor forming step S500 is completed, and the process of forming the N-type semiconductor 150 or the P-type semiconductor 140 on the lower substrate 120 to which the lower electrode 134 is attached is an upper portion. Using the injection mold prepared separately from the substrate injection mold 200, the mold loading process (S520), slurry injection process (S540) and thickness correction process (S560) may be performed in the same manner.

When the above process is completed, the P-type semiconductor 140 and the N-type semiconductor 150 formed on the electrode 130 is debinding for 1-3 hours in a non-oxidizing atmosphere at a temperature of 250 ° C. or less to be an organic solvent. Is removed.

Thereafter, the upper substrate 110 on which the upper electrode 132 is formed and the lower substrate 120 on which the lower electrode 134 is formed are loaded into a sintering mold (not shown) in a state as shown in FIG. 10 and then heated and pressurized. By sintering, the manufacturing of the thermoelectric module is completed at the end of the module forming step (S600).

The scope of the present invention is not limited to the above-exemplified embodiments, and many modifications based on the present invention will be possible to those skilled in the art within the above technical scope.

For example, in one embodiment of the present invention, the slurry is cut by the up / down movement of the cutting mold, but may be cut using a separate cutting knife within the range of cutting the slurry to a precise thickness. will be.

As described in detail above, in the thermoelectric module according to the present invention, the P-type semiconductor or the N-type semiconductor is configured to be injection molded on one surface of the substrate inserted into the injection mold.

The thickness of the electrode, the P-type semiconductor, and the N-type semiconductor can be finely controlled to have a thin film.

In addition, there is an advantage that can implement a thermoelectric module having a variety of sizes and shapes.

In addition, in the present invention, the P-type semiconductor and the N-type semiconductor are injection molded and cut to have a thin thickness, thereby simplifying the manufacturing process, thereby improving productivity and significantly reducing manufacturing costs.

Claims (11)

An upper substrate and a lower substrate which form an upper / lower surface and generate heat or endotherm; Electrodes provided on one surface of the upper substrate and the lower substrate to guide the flow of the supplied power; It comprises a plurality of P-type semiconductor and N-type semiconductor spaced between the electrode, Any one of the P-type semiconductor and N-type semiconductor, The thermoelectric module, characterized in that the injection molding on the upper substrate or the lower substrate (Insert) inserted into the injection mold with the electrode formed. The thermoelectric module of claim 1, wherein the electrode is made of silver (Ag) or copper (Cu). The thermoelectric module according to claim 1, wherein the P-type semiconductor and the N-type semiconductor are formed by injection molding a slurry in which a thermoelectric powder and an organic solvent are mixed. 4. The thermoelectric module according to claim 3, wherein the P-type semiconductor and the N-type semiconductor are sintered by heat and pressure and attached to the electrode. An electrode forming step of forming an upper electrode or a lower electrode on one surface of an upper substrate or a lower substrate forming a part of an external appearance of the thermoelectric module; Forming a P-type semiconductor or an N-type semiconductor on one surface of the upper electrode or the lower electrode; It comprises a module forming step of forming a thermoelectric module by bonding the upper substrate and the lower substrate, The semiconductor forming step, Method of manufacturing a thermoelectric module characterized in that the process of forming a P-type semiconductor or N-type semiconductor by injecting a slurry (mixed slurry) mixed with the thermal powder and the organic solvent on one side of the upper electrode or the lower electrode. The method of claim 5, wherein the electrode forming step, Forming an upper electrode on a lower surface of the upper substrate; Forming a lower electrode on an upper surface of the lower substrate, The upper electrode and the lower electrode is a method of manufacturing a thermoelectric module, characterized in that formed in a position where a portion overlap each other. The method of claim 5, wherein the semiconductor forming step, A mold loading process of inserting the upper substrate or the lower substrate on which the upper electrode or the lower electrode is formed into an injection mold; A slurry injection process of injecting a slurry into the injection mold to form a P-type semiconductor or an N-type semiconductor; A thickness correction process of cutting the injected slurry by a predetermined thickness, A mold opening process for opening an injection mold; A method of manufacturing a thermoelectric module comprising a substrate withdrawal process for withdrawing an upper substrate or a lower substrate with a slurry from an open injection mold. The method of claim 7, wherein in the module forming step, Method for producing a thermoelectric module, characterized in that the organic solvent contained in the slurry is removed. The method of claim 8, wherein in the module forming step, The other end of the slurry is attached to the upper substrate and the lower substrate, one end is respectively attached to the lower substrate and the upper substrate, the manufacturing method of the thermoelectric module. The method of claim 5, wherein before forming the electrode, A powder manufacturing step of preparing a thermal starch powder that will constitute a P-type semiconductor and an N-type semiconductor, A hydrogen reduction step of hydrogen reduction of the pulverized thermal starch; Method for producing a thermoelectric module, characterized in that the slurry step of slurrying by mixing the thermoelectric powder passed through the hydrogen reduction step with an organic solvent. The method of manufacturing a thermoelectric module according to claim 7, wherein the mold loading process, the slurry injection process, and the thickness correction process are performed at the time of forming the P-type semiconductor and the N-type semiconductor, respectively.

Images