KR20100113326A - Exhaust unit of plasma processing apparatus and exhaust method thereof - Google Patents

Exhaust unit of plasma processing apparatus and exhaust method thereof Download PDF

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Publication number
KR20100113326A
KR20100113326A KR1020090031833A KR20090031833A KR20100113326A KR 20100113326 A KR20100113326 A KR 20100113326A KR 1020090031833 A KR1020090031833 A KR 1020090031833A KR 20090031833 A KR20090031833 A KR 20090031833A KR 20100113326 A KR20100113326 A KR 20100113326A
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KR
South Korea
Prior art keywords
exhaust
chamber
plasma processing
apc valve
exhaust unit
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Application number
KR1020090031833A
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Korean (ko)
Inventor
윤종원
정진열
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엘아이지에이디피 주식회사
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Priority to KR1020090031833A priority Critical patent/KR20100113326A/en
Publication of KR20100113326A publication Critical patent/KR20100113326A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to an exhaust unit of a plasma processing apparatus and an exhaust method using the same, the exhaust unit of the plasma processing apparatus according to the present invention, in the exhaust unit that operates to maintain the vacuum state inside the chamber during the initial and process treatment, An exhaust line having one end connected to an exhaust port formed at a bottom side of the chamber; An APC valve connected to one side of the chamber; And a TMP simultaneously connected to the other end of the exhaust line and the APC valve.

According to the present invention, side pumping is performed during the initial chamber vacuum formation and center pumping is performed through a symmetrical exhaust line during the processing of the workpiece, thereby ensuring process uniformity by preventing plasma from side-facing during the processing. It can work.

Description

Exhaust unit of plasma processing equipment and exhaust method using same {EXHAUST UNIT OF PLASMA PROCESSING APPARATUS AND EXHAUST METHOD THEREOF}

The present invention relates to an exhaust unit of a plasma processing apparatus and an exhaust method using the same, and more particularly, side pumping pumping an interior of an initial chamber and a center pumping pumping an interior of a chamber during a process can be simultaneously performed in one line. It relates to an exhaust unit of a plasma processing equipment and an exhaust method using the same.

BACKGROUND OF THE INVENTION Many plasma processing apparatuses for treating a surface of a substrate using plasma have been used in manufacturing processes such as semiconductor devices and liquid crystal display devices. Examples of such a plasma processing apparatus include a plasma etching apparatus for etching a substrate, a plasma CVD apparatus for performing chemical vapor deposition (CVD), and the like.

The plasma processing apparatus includes a chamber in which a vacuum state and an atmospheric pressure state are repeatedly performed, and two upper and lower electrodes opposed to each other in parallel to the upper and lower sides of the chamber. The substrate is mounted on the lower electrode of the two electrodes. Therefore, the lower electrode is also referred to as a substrate mounting table.

Here, the upper electrode is provided at a position opposite to the lower electrode and serves as a process gas supply unit for supplying a process gas between both electrodes as well as serving as an electrode.

The lower electrode has an insulating plate that protects the lower electrode from the plasma at the outer wall and the upper edge portion to surround the electrode, and then fastens the insulating plate at the upper edge portion and the side surface by a plurality of bolts.

In the conventional plasma processing apparatus, as shown in FIGS. 1 and 2, unreacted gas in the chamber 10 during or after the process is performed at the bottom of the chamber 10 in which the stage 12 as the lower electrode is installed. And an exhaust port (not shown) is formed to exhaust the polymer or the like generated during the process to the outside, and an exhaust unit is connected to the exhaust port.

In this case, FIG. 1 is a view illustrating a vacuum formation in the first chamber 10, and FIG. 2 is a view illustrating a vacuum formation in the chamber 10 for performing a process of a workpiece. The exhaust unit is a chamber 10. The APC valve 20 is connected to one side wall of the first buffer space 22 and the flange 24 via the APC valve 20 and the second buffer space 32 to connect the TMP 30. do.

Here, the center pumping is appropriate during the process, but since the stage 12 is installed at the lower center in the chamber 10, the vacuum is generated inside the chamber 10 by side pumping due to the structure and interference of the stage 12. While forming the vacuum inside the chamber 10 to proceed with the workpiece.

However, the conventional exhaust unit has a problem in that the plasma is directed toward the exhaust port while forming a vacuum in the chamber 10 by side pumping, and thus the uniformity of the ion implantation process is lowered due to the plasma deflection.

The present invention has been made to solve the above problems, the object of which is to perform the side pumping when forming the first chamber vacuum and to perform the center pumping through the symmetrical exhaust line in the processing of the workpiece process, the plasma is processed in the process The present invention provides an exhaust unit of a plasma processing apparatus and an exhaust method using the same, by which side uniformity can be prevented by preventing side pull.

In order to achieve the above object, the present invention provides an exhaust unit that operates to maintain a vacuum state inside the chamber during initial and process processing, comprising: an exhaust line having one end connected to an exhaust port formed at a bottom side of the chamber; An APC valve connected to one side of the chamber; And a TMP simultaneously connected to the other end of the exhaust line and the APC valve.

In addition, the exhaust line in the present invention is characterized in that it is formed symmetrically.

In addition, a buffer space portion is formed between the chamber, the APC valve and the TMP in the present invention.

In addition, the exhaust line in the present invention is characterized in that one end is connected to the exhaust port, the other end is connected to the buffer space formed between the APC valve and the TMP.

In order to achieve the above object, the present invention comprises the steps of: a) side pumping the interior of the original chamber; And b) center pumping the process inside the chamber for processing.

In addition, the step a) in the present invention is characterized by performing by operating the APC valve and TMP.

In addition, in the step b) of the present invention, the APC valve may be performed by operating the TMP after shutting off.

In addition, the step b) in the present invention is characterized in that the pumping in the symmetrical direction through the exhaust line.

The exhaust unit of the plasma processing apparatus of the present invention and the exhaust method using the same, the side pumping when the first chamber vacuum is formed, and the center pumping through the symmetrical exhaust line during the workpiece processing process, the plasma is processed in the process By preventing the phenomenon of side-side drift has the effect of ensuring process uniformity.

Hereinafter, with reference to the accompanying drawings, the exhaust unit and the exhaust method using the same of the plasma processing equipment of the present invention will be described as follows.

Exhaust unit of the plasma processing apparatus according to an embodiment of the present invention is the exhaust line 116, the APC valve 120, the first buffer (122) space portion 122, as shown in FIG. The TMP 130 and the second buffer space portion 132 are included. 3 is a diagram illustrating side pumping for generating an initial pressure (5 × E-7 Torr) of the chamber 110, and FIG. 4 is an actual process pressure (8 × E-3 Torr) of the chamber 110. Is a diagram illustrating center pumping for generation).

The exhaust line 116 is uniformly formed at one end with an exhaust port 114 symmetrically formed at the bottom edge of the chamber 110 so as to maintain the vacuum state in the chamber 110 during the initial and process processing, and the other end is the APC valve 120 and the TMP. It is connected to the second buffer space portion 132 formed between (130).

In addition, the exhaust line 116 is preferably formed symmetrically because it needs to be pumped into the vacuum state by center pumping the inside of the chamber 110 during processing of the workpiece. This is because it is impossible to connect the exhaust line 116 to the center of the chamber 110 due to the structure and interference of the stage 112 installed in the chamber 110, so as to obtain a center pimping effect while performing side pumping.

And the exhaust line 116 is provided with a valve 116a for connecting or closing the interior of the chamber 110 and the second buffer space 132, the valve 116a is a throttle valve (throttle valve) Grafted.

Here, as shown in FIG. 3, when the high vacuum is formed inside the first chamber 110, the valve 116a is operated to close the exhaust line 116 and then side pumped through the APC valve 120 and the TMP 130. Side pumping), and as shown in Figure 4, the center pumping for the processing of the workpiece to operate the APC valve 120 when forming a vacuum inside the chamber 110, after disconnecting the valve 116a By deactivating the opening of the exhaust line 116, the plasma is prevented from being sideways.

The automatic pressure control (APC) valve 120 is an automatic pressure control valve connected between the first buffer space 122 and the second buffer space 132 connected to one side of the chamber 110, and repeats opening and closing. By adjusting the pressure in the chamber 110 to match the process conditions.

At this time, a flange 124 is interposed between the APC valve 120 and the first buffer space 122 to connect the parts.

The turbo molecular pump 130 is a turbomolecular pump that is connected to the second buffer space 132 that simultaneously connects the other end of the exhaust line 116 and the APC valve 120 to the inside of the chamber 110. It is preferable to use in order to exhaust gas with high residuals, such as hydrogen fluoride gas, at high speed.

Exhaust method using the exhaust unit of the plasma processing equipment of the present invention includes a step (S200) and a center pumping step (S210) as shown in Figs.

The side pumping step (S200) is performed by operating the APC valve 120 and the TMP 130 to convert the inside of the chamber 110 into a high vacuum state.

That is, after the workpiece is loaded and the high vacuum is formed inside the chamber 110, the valve 116a is operated to close the exhaust line 116, and then side pumping is performed through the APC valve 120 and the TMP 130. It is.

The step of pumping the center (S210) is a step of converting a vacuum state for processing the workpieces inside the chamber 110, and is performed by shutting off the APC valve 120 and then operating the TMP 130. It is preferable to pump in the symmetrical direction through the exhaust line 116 when pumping.

In other words, when the vacuum is formed in the chamber 110, the APC valve 120 is operated to cut off the connection, and then the valve 116a is operated to open the exhaust line 116, thereby preventing the plasma from sideways. As a result, the process uniformity may be improved by preventing the plasma tipping phenomenon.

In the detailed description of the present invention described above with reference to the preferred embodiment of the present invention, the scope of protection of the present invention is not limited to the above embodiment, and those skilled in the art of the present invention It will be understood that various modifications and changes can be made in the present invention without departing from the spirit and scope of the invention.

1 and 2 are schematic diagrams showing a state in which a vacuum is formed in a chamber in accordance with an initial chamber vacuum formation and a process in an exhaust unit of a conventional plasma processing apparatus.

3 and 4 are schematic diagrams showing a state in which a vacuum is formed in the chamber according to the initial vacuum formation and process in the exhaust unit of the plasma processing apparatus according to the present invention.

5 is a flowchart illustrating an exhaust method using an exhaust unit of the plasma processing apparatus according to the present invention.

<Description of Symbols for Main Parts of Drawings>

110; Chamber 116: exhaust line

116a: valve 120: APC valve

122: first buffer space portion 130: TMP

132: second buffer space portion

Claims (8)

In the exhaust unit which operates to maintain the vacuum inside the chamber during the initial and the process, An exhaust line having one end connected to an exhaust port formed at a bottom side of the chamber; An APC valve connected to one side of the chamber; And TMP connected to the other end of the exhaust line and the APC valve at the same time; exhaust unit of the plasma processing equipment comprising a. The method of claim 1, The exhaust line is an exhaust unit of the plasma processing equipment, characterized in that formed symmetrically. The method of claim 1, And a buffer space portion is formed between the chamber, the APC valve and the TMP, respectively. The method of claim 3, wherein The exhaust line is an exhaust unit of the plasma processing equipment, characterized in that one end is connected to the exhaust port, the other end is connected to the buffer space formed between the APC valve and the TMP. a) side pumping the interior of the original chamber; And b) center pumping the process inside the chamber for the process; exhaust method using the exhaust unit of the plasma processing equipment comprising a. The method of claim 5, In the step a), the APC valve and the exhaust method using the exhaust unit of the plasma processing equipment, characterized in that performed by operating the TMP. The method of claim 5, In the step b), the APC valve is blocked and then the TMP is operated by the exhaust unit of the plasma processing equipment, characterized in that performed by. The method of claim 7, wherein In the step b), the exhaust method using the exhaust unit of the plasma processing equipment, characterized in that pumping in a symmetrical direction through the exhaust line.
KR1020090031833A 2009-04-13 2009-04-13 Exhaust unit of plasma processing apparatus and exhaust method thereof KR20100113326A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180026008A (en) * 2016-09-01 2018-03-12 세메스 주식회사 Apparatus for treatinf substrate and Exhausting method
KR20200012551A (en) * 2018-07-27 2020-02-05 (주)아이솔루션 An Apparatus for Exhausting a Gas from a Processing Chamber with an Improved Venting Efficiency

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180026008A (en) * 2016-09-01 2018-03-12 세메스 주식회사 Apparatus for treatinf substrate and Exhausting method
KR20200012551A (en) * 2018-07-27 2020-02-05 (주)아이솔루션 An Apparatus for Exhausting a Gas from a Processing Chamber with an Improved Venting Efficiency

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