KR20100110989A - Cmp pad conditioner and its manufacturing method - Google Patents

Abstract

PURPOSE: A CMP pad conditioner and a manufacturing method thereof are provided to prevent glazing, excessive abrasion, damage of a CMP pad due to diamond abrasive by controlling the height of the diamond abrasive. CONSTITUTION: A CMP pad conditioner includes a base material(10), a first abrasive layer, and a second abrasive layer. The base material has a first region(12) and a second region(14) higher than the first region on one surface between the center and an edge. The first abrasive layer is formed on the first region by fixing the diamond abrasives. The second abrasive layer is formed on the second region by fixing the diamond abrasives. The second abrasive layer is higher than the first abrasive layer.

Description

CMP PAD CONDITIONER AND MANUFACTURING METHOD THEREOF {CMP PAD CONDITIONER AND ITS MANUFACTURING METHOD}

The present invention relates to a CMP pad conditioner and a method for manufacturing the same, and more particularly, to a CMP pad conditioner and a method for manufacturing the same having abrasive layers that function differently by height.

Chemical Mechanical Polishing (CMP) processes are used in many industries to polish the surface of certain workpieces. In particular, in the field of manufacturing semiconductor devices, microelectronic devices or computer products, the CMP process is widely used for polishing ceramics, silicon, glass, quartz, metals and / or wafers thereof. The CMP process involves the use of a CMP pad that rotates to face a workpiece such as a wafer. In addition, during the CMP process, a liquid slurry containing a chemical substance and abrasive particles are added to the CMP pad.

In the field of manufacturing semiconductor devices, scratches or defects on the wafer during the CMP process reduce the yield and productivity of the semiconductor devices. In particular, in a CMP process in which a relatively large diameter wafer is planarized using a correspondingly large CMP pad, the impact and stress on the wafer and the CMP pad become greater, so that scratches on the wafer are more likely to cause defects. Is also higher.

Particularly important for the polishing quality by the CMP process is the distribution of abrasive particles spreading throughout the CMP pad. The top of the CMP pad typically supports abrasive particles by mechanisms such as fibers or small pores, where such fibers or small pores determine the performance of the CMP pad. Therefore, in order to maintain the performance of the CMP pad, it is necessary to keep the upper fibrous structure of the CMP pad as flexible as possible and have sufficient extra voids to accommodate new abrasive particles. For this purpose, a conditioning or dressing process of the CMP pad by the CMP pad conditioner is required.

The CMP pad conditioner is a tool for conditioning or dressing a CMP pad top while rotating facing the CMP pad, and includes a structure in which a plurality of diamond abrasive grains are fixed on a metal substrate. In a typical CMP pad conditioner, the diamond abrasive grains contained therein penetrate moderately or excessively into the CMP pad to make a practical dressing. However, such a CMP conditioner has a problem that there is little or little discharge passage of the slurry, there is a risk of damaging the upper part of the CMP pad.

On the other hand, in the past, there has been a study that the size of the diamond abrasive grains and the resulting protrusion height irregularly different, so that the abrasive grains having different protrusion heights have various functions for the CMP pad. Theoretically, diamond abrasive grains in fine contact with the CMP pad may contribute to clean up the surface of the CMP pad, while diamond abrasive grains slightly away from the CMP pad may act to push the slurry out. Furthermore, if there are diamond abrasive grains that are not in contact with the slurry, they may act as a passage for the slurry. However, the irregular arrangement and large scattering of the diamond abrasive grains and the size and protrusion height may reduce the leveling and cause excessive wear and / or damage to the surface of the CMP pad, which is a conditioning or dressing object, by diamond abrasive grains having excessive protrusion height. Is large.

Accordingly, the technical problem of the present invention is to provide a CMP pad conditioner having a regular array of abrasive layers having different heights which may play different roles with respect to the CMP pad being a conditioning or dressing object.

According to an aspect of the present invention, a CMP pad conditioner includes a base material having a first area and a second area having a height greater than the first area on one surface between a center and an edge, and formed of diamond abrasive grains fixed to the first area. A first abrasive layer and a second abrasive layer are formed higher than the first abrasive layer because the diamond abrasive grains are fixed to the second region.

As used herein, the term 'diamond diamond' can be used for the conditioning or dressing of CMP pads, such as polycrystalline diamond (PCD), cubic boron nitride (cBN) or polycrystalline cubic boron nitride (PcBN) as well as general diamond particles. It contains all kinds of particles.

Preferably, the base material may include a third region in the first region where diamond abrasive grains are not fixed. The third region is coplanar with the first region.

The first abrasive layer and the second abrasive layer may extend gradually from the position close to the center to the edge or the position close thereto. The base material may include a third region in which diamond abrasive grains are not fixed, between the first abrasive layer and the second abrasive layer.

The second region may have a height greater than that of the first region by the plating layer formed on the surface of the base material.

Alternatively, the first region may have a height lower than that of the second region by grooves cut to a predetermined depth from the surface of the base material.

The CMP pad conditioner manufacturing method according to the present invention comprises the steps of: (a) forming a pattern comprising a first region and a second region having a height greater than the first region, (b) the first region and the Adhering diamond abrasive grains to a second region to form a first abrasive layer and a second abrasive layer higher than the first abrasive layer. In this case, step (a) forms a plating layer corresponding to the second region.

Preferably, the step (a) includes forming a photoresist layer on the surface of the base material to define a place where the plating layer is to be formed, and partially forming the photoresist layer by an exposure process and a developing process. Removing. In this case, it is preferable to use a dry photosensitive film as the photoresist layer, and the exposure process is preferably to use a positive method.

Preferably, after forming the plating layer, the method may further include defining a third region in which the diamond abrasive grains are not fixed in the first region. The third region is defined by a pattern layer covering it, wherein defining the third region comprises: forming a photoresist layer covering the surface of the base material over the plating layers; Partially removing the photoresist layer.

Alternatively, the step (a) may be to cut the surface of the base material to a predetermined depth, to form a groove corresponding to the first region.

In another aspect of the invention, another CMP pad conditioner comprises diamond abrasive grains and a base material having a plurality of fixation regions defined by the diamond abrasive grains being fixed, wherein the plurality of fixation regions include fixation regions of different heights. . Advantageously, said plurality of fixation regions comprises upper and lower fixation regions.

According to one embodiment, the upper fixing areas are formed higher than the original surface by the thickness formed on the original surface of the base material, and the lower fixing areas are formed equal to or lower than the original surface of the base material. The thickness portion may be formed by plating or bonding of a conductive thin film.

According to another embodiment, the upper fixing areas have the same height as the original surface of the base material, and the lower fixing areas are formed by shaping lower than the original surface of the base material. In this case, the lower fixing areas are preferably formed by etching or machining the original surface of the base material.

According to an embodiment, the plurality of fixing areas may include an arrangement in which one upper fixing area is disposed between two neighboring lower fixing areas. Alternatively, the plurality of fixation regions may comprise an arrangement in which two or more upper fixation regions are disposed between two neighboring lower fixation regions. Alternatively, the plurality of fixation regions may include an arrangement in which one or more lower fixation regions are disposed between two neighboring upper fixation regions. At this time, it is preferable that the arrangement is continued regularly in the direction of rotation.

According to one embodiment, the upper fastening area and the lower fastening area are gradually widened in one direction between the center of the base material and the edge of the base material. According to an alternative embodiment, the upper fastening area and the lower fastening area extend in progressively different directions between the center of the base material and the edge of the base material.

According to an embodiment, at least one of the upper fixing regions may be different in height from other upper fixing regions. According to another embodiment, at least one of the lower fixing regions may be different in height from other upper fixing regions.

The height difference between the upper fixing regions and the lower fixing regions is set to 0.001 to 0.1 mm, preferably 0.002 to 0.02 mm, more preferably 0.005 to 0.01 mm. This height difference is particularly advantageous when forming a plating layer which fixes the diamond abrasive grains by electroplating. By electroplating, although a difference of height of 0.1 mm is allowed, even if the height difference is only 0.02 mm or more, a variation in plating height occurs, so if possible, a height difference of less than 0.02 mm is recommended. In the case of electroplating using Ni, there is a problem of plating smoothness, and a plating height deviation between the inner diameter and the outer diameter occurs. This leads to product reproducibility problems. Controlling the height of the plating to 0.01 mm or less reduces the height deviation.

According to an embodiment, at least one of the upper fixing regions may be formed in a stepped structure having different heights. According to another embodiment, at least one of the lower fixing regions is formed in a stepped structure having different heights.

According to the present invention, the abrasive layers intentionally different in height, in addition to the actual dressing function for the CMP pad, serve as the passage function of the slurry, the function of pushing the slurry, and / or the proper cleaning of the CMP pad surface, It can greatly contribute to keeping the performance of CMP pads good. Further, according to the present invention, diamond abrasive grains can be managed at desired heights, thereby preventing excessive wear and damage of the CMP pad and glazing caused by excessively protruding diamond abrasive grains.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a perspective view showing a shank for a CMP pad conditioner according to an embodiment of the present invention, Figure 2a is a plan view showing a CMP pad conditioner in accordance with an embodiment of the present invention, Figure 2b is Figure 2a A cross section taken along II.

Referring to FIG. 1, the base material 10 has a shape of a rough disk including a center and an edge. In addition, the base material 10 is made of a metal material of high strength. The base material 10 includes a first region 12 and a second region 14 on the surface between the center and the edge. The second regions 14 have a height greater than that of the first region 12. In the present embodiment, the second regions 14 have a height greater than that of the first region 12 by the plating layers formed flat on the surface of the base material. In addition, the second regions 14 extend gradually from the position close to the center of the base material to the edge of or close to the base material. At this time, the height difference between the first region 12 and the second region 14 is preferably 0.001 to 0.1mm, preferably 0.002 to 0.02mm, more preferably 0.005 to 0.01mm. .

In order to form a CMP pad conditioner, diamond abrasive grains are fixed to the second regions 14 and the first region 12. In this embodiment, diamond abrasive grains are fixed to all of the second regions 14 and to a portion of the first region 12. In FIG. 1, the area indicated by the dotted line represents the area where the diamond abrasive grains are stuck in the first area 12, that is, the lower stuck area. In addition, diamond abrasive grains are not fixed to the first region outside the dotted line. In the present specification, a region in which the diamond abrasive grains are not fixed in the first region 12 is referred to as a third region.

2A and 2B, the CMP pad conditioner 1 according to the present embodiment includes the base material 10 and the first abrasive layer 22 and the second abrasive layer formed on the base material 10. (24). In this case, the second abrasive layer 24 is formed by the diamond abrasive grains 2 being fixed to the second regions 14, that is, the upper fixing regions, of the base material, and the first abrasive layer 22 is formed. Is formed by the diamond abrasive grains 2 stuck to various portions of the first region 12. Metal brazing or metal sintering may be used to form the adhesive layer used to fix the diamond abrasive grains.

The second abrasive layer 24 is formed on each of the second regions 14, and thus follows the shape of each of the second regions 14. That is, the second abrasive layer 24 is formed in a shape that is gradually widened from a position close to the center to a border or a position close thereto. In the present embodiment, the first abrasive layer 22 is also formed in a shape similar to that of the second abrasive layer 24, that is, gradually extending from a position close to the center to a border or a position close thereto.

In this case, since the height of the second region 14 is higher than that of the first region 12, the second abrasive layer 24 formed in the second region 14 may be formed of the first region 12. It is located higher than the abrasive grain layer 22. Therefore, in the dressing process of the CMP pad (not shown), the second abrasive layer 24 performs a proper dressing by penetrating the CMP pad appropriately, and the first abrasive layer 22 is a CMP pad. The microscopic contact with the surface may serve to clean up the CMP pad surface and / or to push the slurry, or to push out the slurry or serve as a passage for the slurry. The role of the first abrasive layer 22 is different by manufacturing a CMP pad conditioner by determining a height difference between the first abrasive layer 22 and the second abrasive layer 24 in advance. The height difference between the first abrasive grain layer 22 and the second abrasive grain layer 24 is 1 to 30 µm, preferably 2 to 20 µm, and more preferably 5 to 10 µm. The diamond abrasive grains of the second abrasive layer 24 protrude more than the diamond abrasive grains of the first abrasive layer 22, so that the diamond abrasive grains on the side of the second abrasive layer 24 are not only the tip portion. Side parts can also be used as machining edges.

As mentioned above, the first region 12 of the base material 10 includes a third region 13 to which diamond abrasive grains 2 are not attached, and the third region 13 includes a first region. Located between the abrasive grain layer 22 and the second abrasive grain layer 24 to form a plurality of channels that are discharge passages of the slurry during the CMP pad dressing process. In the present specification, the region near the edge of the base material surface and the region near the center are not considered to be included in the first region 12 and the third region 13. This is because it is possible to consider that the abrasive grain layers having the region near the edge and the region near the center are formed, and it is not important to include the above regions in the first region and the third region.

3 to 6 are views for explaining a manufacturing method of the CMP pad conditioner according to an embodiment of the present invention.

In general, the manufacturing method of the CMP pad conditioner includes a step of forming a stepped pattern on the base material, that is, a stepped pattern having different heights of the first area and the second area, and diamond grains on the base material including the stepped pattern. Adhering to forming abrasive layers of different heights, that is, first and second abrasive layers.

First, FIG. 3 and FIG. 4 show a process of forming a stepped pattern on a base material.

Referring to FIG. 3A, a mask for first forming a photoresist layer P1 on the surface of the base material 10 and then covering the photoresist layer P1 locally on the photoresist layer P1 ( The exposure process which positions M1) and irradiates UV (ultraviolet) to the photoresist layer P1 on the mask M1 is shown in order. In the present embodiment, the process of forming the photoresist layer P1 is performed by attaching a dry film photoresist (DFR) to the surface of the base material. The exposure process is performed in a positive manner, that is, an exposed portion of the photoresist layer P1, which is not covered by the mask M1, is cured by ultraviolet rays, followed by the phenomenon shown in FIG. By the developing process, a method in which the exposed portion irradiated with the ultraviolet rays remains on the surface of the base material 10 is adopted. In Fig. 3B, the portion indicated by the dotted line is the portion removed by the developer. The photoresist layer P1 remaining in the base material provides a place where the plating layer is to be formed later.

Referring to FIG. 4A, the plating layer 3 is formed in regions of the base material 10 defined by the photoresist layer P1 in the processes illustrated in FIGS. 3A and 3B. . The plating layer 3 is preferably a nickel plating layer formed by nickel plating, but the present invention is not limited thereto. As shown in FIG. 4B, when the photoresist layer P1 is removed, the upper surface of the base material 10 is the second region 14 raised by the plating layer 3 (see FIG. 1). And a pattern including the first region 12 (see FIG. 1), which is not the case.

Diamond abrasive grains are adhered to the surface of the base material 10 having a pattern in which the height of the second region 14 is greater than that of the first region 12, thereby forming a first abrasive layer and a second abrasive layer having different heights.

The method according to an embodiment of the present invention, before forming the first abrasive layer and the second abrasive layer, defines a third region 13 (see FIG. 2B) in which the abrasive layer is not formed in order to secure a slurry passage. The process is carried out and this process is well illustrated in Figures 5 (a), (b) and (c).

Referring to FIG. 5A, a photoresist layer P2 having a height covering the plating layer 3 of the first region is entirely formed on the base material 10 having the first region and the second region. At this time, a dry photosensitive film, that is, DFR is used as the photoresist layer (P2). Next, as shown in Figs. 5B and 5C, after the mask M2 is placed on the photoresist layer P2, the photoresist is not covered by the mask M2 by UV irradiation. An exposure process for locally removing the layer P2 followed by a development process is performed in sequence. At this time, the negative method in which the portion irradiated to U.V is removed is adopted as the exposure step and the developing step. At this time, the photoresist layer P2 remaining on the surface of the base material 10 prevents the abrasives from sticking to the surface of the base material in the subsequent abrasive fixing step, thereby securing a third region for securing a slurry passage. (13) is defined.

6 (a) and 6 (b) show a process of fixing diamond abrasive grains to a base material surface to form abrasive grain layers.

Referring to FIG. 6A, the diamond abrasive grains 2 are fixed to the second region 14 having a high height and the first region 12 having a small height at the base material surface. As mentioned above, as mentioned above, an adhesive layer (not shown) formed by brazing, metal sintering or electroplating may be used. In addition, the diamond abrasive grains preferably have a size of 50 to 500 mesh. Since the second region 14 is located higher than the first inverse 12, the second abrasive layer 24 formed in the second region 14 has a height on the first region 12. It is larger than the height of the first abrasive grain layer 22 formed.

At this time, the diamond abrasive grains do not adhere to the bottom of the photoresist layer P2 remaining on the surface of the base material 10 by the foregoing process. Next, as shown in FIG. 6B, when the photoresist layer P2 is removed, in the CMP pad dressing process, the third region 13 serving as the discharge passage of the slurry is the first abrasive layer 22. ) And the second abrasive grain layer 24.

FIG. 7 is a view for explaining another embodiment of the present invention. Referring to FIG. 7, the second region 14 in which the second high abrasive grain layer is formed is at the same height as the original base material surface. The first region 12 in which the small first abrasive grain layer is formed is formed by cutting the surface of the base material to a predetermined depth. Even in this case, when the diamond abrasive grains are fixed to the first region 12 and the second region 14, the diamond abrasive grains fixed to the second region 14 are more than the diamond abrasive grains fixed to the first region 12. Will protrude. In order to form the first region, various processing methods capable of cutting the surface of the base material such as cutting or etching may be used.

In order to compare the performance of the CMP pad conditioner according to the present invention having a stepped structure formed as described above with the conventional CMP pad conditioner according to the comparative example, the polishing process for the CMP pad is performed under the conditions of [Table 1]. We looked at the results. In the case of the present invention, a CMP pad conditioner having a height of 10 μm of the first abrasive layer and the second abrasive layer was used. In the comparative example, an existing CMP pad conditioner having a constant height of abrasive grains was used.

8 is a graph comparing the removal rate performance of the CMP pad conditioner of the present invention and the comparative example. Referring to FIG. 8, the removal rate of the CMP pad conditioner of the present invention is better than that of the comparative example. In the present invention, while the removal rate performance is almost constant over time, the comparative example can confirm that the removal rate performance is rapidly reduced after about 10 hours.

Hereinafter, other embodiments of the CMP pad conditioner will be described. In the following description, the region (s) to which the diamond abrasive grains are fixed are referred to as 'fixing region (s)' and the region (s) higher than the original surface of the base material among the fixing regions is referred to as 'upper fixing region (s)'. Among the fixing areas, the areas having the same height or lower height as the original surface of the base material are referred to as 'lower fixing area (s)'. In the following description, the upper fixation region (s) correspond to the second region (s) in the previous embodiment description, and the lower fixation region (s) are the diamond abrasive grains of the first region in the preceding embodiment descriptions to be fixed. Corresponds to the region (s). The region where the diamond abrasive grains are not fixed is well described in the previous embodiment, and thus, detailed description thereof is omitted. In addition, the CMP pad conditioner described below may be manufactured by the same (substantially) method as the manufacturing method described in the foregoing embodiments.

9A and 9B are plan views respectively illustrating a CMP pad conditioner and its plate-shaped base material according to another embodiment of the present invention, and FIG. 10 is a cross-sectional view taken along II-II of FIG. 9A.

9A, 9B, and 10, the CMP pad conditioner 100 of the present embodiment includes sixteen abrasive layers 122, 124 formed by adhesion of diamond abrasive grains to one surface of the plate-shaped base material 110. do. Due to the sticking of the diamond abrasive grains, 16 fixation regions 112 and 114 are defined on the base material surface below the abrasive layers 122 and 124. The fixation regions 112 and 114 are defined in a pattern of different heights prior to fixation of the diamond abrasive grains, so that the upper fixation regions 114 higher than the original surface of the base material and the same height or lower than the original surface of the base material. Bottom anchoring regions 112. By the height difference between such fixing areas 112 and 114, the height difference of the abrasive layers 122 and 124 in each area is generated.

In FIG. 9B, the lower fixation regions 112 are indicated by dashed lines and the upper fixation regions 114 are indicated by solid lines. In the present embodiment, the upper fixing regions 114 can be obtained by locally forming a flat conductive thickness portion on the surface of the base material 110, and the thickness portion is the same plating process as in the previous embodiment (Fig. 4), or alternatively, may be formed by locally bonding a conductive thin film to the surface of the base material 110. In addition, the lower fixing regions 112 may be regions where the processing for forming the step is omitted, that is, the region having the same height as the original surface of the base material 110.

In the present embodiment, each of the lower fixing regions 112 and the upper fixing regions 114 is progressive in one direction, that is, toward the edge, between the center of the base material 110 and the edge of the base material 110. As it widens and continues. Further, three upper fixing regions 114, 114, 114 are arranged between two neighboring lower fixing regions 112, 112, which arrangement is regularly continuous in the direction of rotation. Thereby, in total, the upper fixation regions 114, 114, 114 are located between two adjacent lower fixation regions 112, 112, three by three. As shown in FIGS. 9A and 10, three successive second abrasive layers 124, 124, 124 based on the upper anchoring area are always between two neighboring first abrasive layers 122, 122. Is placed on. The arrangement of this embodiment as described above is more augmented by the actual dressing function of the CMP pad conditioner than the previous embodiment, in which the abrasive grain layers of different heights were arranged in equal numbers.

11A and 11B are plan views respectively illustrating a CMP pad conditioner and its plate-shaped base material according to yet another embodiment of the invention, and FIG. 12 is a cross-sectional view taken along III-III of FIG. 11A.

11A and 11B, the CMP pad conditioner 200 according to the present embodiment includes 24 abrasive layers 222, based on 24 fixation regions 212 and 214 on the base 210 surface. 224). Among the abrasive layers, the first abrasive layers 222 are formed based on the lower fixing areas 212 on the original surface of the base material 210, and the second abrasive layers 224 are formed on the original material of the base material 210. It is based on the upper fixing areas 214 protruding from the surface. In the present embodiment, two upper fixing areas 214 and 214 are arranged between two neighboring lower fixing areas 212 and 212, which arrangement is regularly continued along the direction of rotation. Accordingly, as shown in FIG. 12, two relatively high second abrasive grain layers 224 and 224 are continuously disposed between two relatively low neighboring first abrasive layers 222 and 222.

13 is a plan view illustrating a CMP pad conditioner according to another embodiment of the present invention.

Referring to FIG. 13, the CMP pad conditioner 300 may be formed of a first abrasive layer 322 based on lower fixation regions on the base 310 surface and an upper fixation region on the surface of the base 310. Two abrasive layers 324. In this case, the first abrasive layer 322 is gradually widened toward the center from the edge of the base material 310 toward the center. The second abrasive layer 324 is gradually widened from the center of the base material 310 toward the edge. The lower fixing regions in which the first abrasive layer 322 is formed gradually widen from the vicinity of the edge toward the center, and conversely, the upper fixing regions in which the second abrasive layers 324 are formed may extend the edge from near the center of the base material. It gradually widens toward the end. This arrangement increases the area of the second abrasive layer 324 near the rim, which is primarily required for dressing function, compared to the area of the first abrasive layer 322 near the center, which requires less dressing function.

Although the above has been mainly described for the CMP pad conditioner which further forms a thickness on the original surface of the base material to form the upper fixing area, and uses the original surface of the base material as the lower fixing area, the original surface of the base material uses the upper fixing area, It is also within the scope of the present invention to form a groove of a certain depth from the original surface of the base material and to use the bottom surface of the groove as the lower fixing region. Etching or mechanical processing (particularly cutting) can be used for the formation of grooves for the lower fixing area.

14 shows the substrates of various other embodiments applicable to the CMP pad conditioner of the present invention.

First, FIG. 14A shows the base material 410 having a structure in which heights h1 and h2 of the upper fixing regions 414a and 414b protruding from the original surface of the base material 410 are different. At this time, the height of the lower fixing region 412 is smaller for both the upper fixing regions 414a and 414b.

FIG. 14B illustrates a base material in which the upper fixing area 514 protruding to the original surface of the base material 510 has a step (or step) structure having a plurality of different heights H1, H2, and H3. 410). At this time, the lower fixing region 512 has a lower height than the height (H1, H2, H3) of each of the upper fixing region 514 above.

FIG. 14C shows the base material 610 in which the lower fixing areas 612a and 612b recessed from the original surface of the base material 610 have different heights H and h. At this time, the upper fixing area 614 is above the original surface of the base material, and therefore, the height thereof is larger than the height of the lower fixing areas 612a and 612b.

FIG. 14D shows the base material 710 in which the lower fixing region 712 recessed from the original surface of the base material 700 has a plurality of different heights H 'and h'. The height of the fixation region 714 is greater than the heights of the lower fixation region 712.

1 is a perspective view showing a shank for a CMP pad conditioner according to an embodiment of the present invention.

2A is a plan view of a CMP pad conditioner in accordance with one embodiment of the present invention.

FIG. 2B is a cross-sectional view of the CMP pad conditioner taken along the line I-I of FIG. 2A. FIG.

3 to 7 are views for explaining a CMP pad conditioner manufacturing method according to an embodiment of the present invention.

8 is a graph for comparing the wear performance of the CMP pad of the present invention and the comparative example.

9A is a plan view of a CMP pad conditioner in accordance with another embodiment of the present invention.

FIG. 9B is a plan view showing a base material of the CMP pad conditioner shown in FIG. 9A; FIG.

10 is a sectional view taken along II-II of 9a.

11A is a plan view of a CMP pad conditioner according to another embodiment of the invention.

FIG. 11B is a plan view showing a base material of the CMP pad conditioner shown in FIG. 11A; FIG.

12 is a cross-sectional view of the CMP pad conditioner taken along III-III of FIG. 11A.

Figure 13 is a plan view of a CMP pad conditioner according to another embodiment of the present invention.

Figures 14 (a), (b), (c) and (d) are sectional views showing the base material for the CMP pad conditioner of various embodiments applicable to the present invention.

Claims (34)

A base material having a first region and a second region having a height greater than the first region on one surface between the center and the edge; A first abrasive layer formed by adhering diamond abrasive grains to the first region; And And a second abrasive layer, wherein diamond abrasive grains adhere to the second region and are formed higher than the first abrasive layer. The CMP pad conditioner of claim 1, wherein the base material includes a third region in the first region where diamond abrasive grains are not fixed. The CMP pad conditioner of claim 2, wherein the third region is coplanar with the first region. The CMP pad conditioner of claim 1, wherein the first abrasive layer and the second abrasive layer are gradually expanded from a position close to the center to the edge or a position close thereto. The CMP pad conditioner of claim 4, wherein the base material includes a third region in which diamond abrasive grains are not fixed between the first abrasive layer and the second abrasive layer. The CMP pad conditioner of claim 1, wherein the second region has a height greater than that of the first region by a plating layer formed on the surface of the base material. The CMP pad conditioner of claim 1, wherein the first region has a height lower than that of the second region by a groove cut to a predetermined depth from the surface of the base material. (a) forming a pattern on the base material including a first region and a second region having a height greater than that of the first region; And (b) adhering diamond abrasive grains to the first region and the second region, thereby forming a first abrasive layer and a second abrasive layer higher than the first abrasive layer. The method of claim 8, wherein step (a) forms a plating layer corresponding to the second region. 10. The method of claim 9, wherein the step (a) comprises forming a photoresist layer on the surface of the base material to define a place where the plating layer is to be formed, and partially forming the photoresist layer by an exposure process and a developing process. CMP pad conditioner manufacturing method comprising the step of removing. The method of claim 10, wherein a dry photosensitive film is used as the photoresist layer, and the exposure process uses a positive method. 10. The method of claim 9, further comprising defining a third region in which the diamond abrasive grains are not fixed in the first region after the plating layer is formed. The method of claim 12, wherein the third region is defined by a pattern layer covering the third region. The method of claim 13, wherein the defining of the third region comprises: Forming a photoresist layer covering the surface of the base material over the plating layers; And partially removing the photoresist layer to form the patterned layer. The method according to claim 8, wherein the step (a), by cutting the surface of the base material to a predetermined depth, to form a groove corresponding to the first region, CMP pad conditioner manufacturing method. Diamond abrasive grains; And Wherein the diamond abrasive grains are fixed to include a base material having a plurality of fixed areas defined therein, And the plurality of fixation regions include fixation regions of different heights. 17. The CMP pad conditioner of claim 16, wherein the plurality of fixation regions include upper fixation regions and lower fixation regions. The CMP of claim 17, wherein the upper fixing areas are formed higher than the original surface by a thickness formed on the original surface of the base material, and the lower fixing areas are formed at or below the original surface of the base material. Pad conditioner. 19. The CMP pad conditioner of claim 18, wherein the thickness portion is formed by plating or bonding a conductive thin film. 17. The CMP pad conditioner of claim 16, wherein the upper fixation regions have the same height as the original surface of the base material and the lower fixation regions are shaved lower than the original surface of the base material. 21. The CMP pad conditioner of claim 20, wherein the lower fixation regions are formed by etching or machining the original surface of the base material. 18. The CMP pad conditioner of claim 17, wherein the plurality of fixation regions comprises an arrangement in which one upper fixation regions are disposed between two neighboring lower fixation regions. 18. The CMP pad conditioner of claim 17, wherein the plurality of fixation regions comprises an arrangement in which two or more upper fixation regions are disposed between two neighboring lower fixation regions. 18. The CMP pad conditioner of claim 17, wherein the plurality of fixation regions comprises an arrangement in which one or more lower fixation regions are disposed between two neighboring upper fixation regions. 25. The CMP pad conditioner of any one of claims 22, 23 and 24, wherein the arrangement is regularly continuous in the direction of rotation. The CMP pad conditioner according to claim 25, wherein the upper fixing region and the lower fixing region are gradually extended in one direction between the center of the base and the edge of the base. The CMP pad conditioner of claim 25, wherein the upper fixing region and the lower fixing region are gradually widened in different directions between the center of the base material and the edge of the base material. 18. The CMP pad conditioner of claim 17, wherein at least one of the upper fixation regions is different in height from the other upper fixation regions. 18. The CMP pad conditioner of claim 17, wherein at least one of the lower fixation regions is different in height from the other upper fixation regions. The CMP pad conditioner of claim 17, wherein a height difference between the upper fixing regions and the lower fixing regions is set to 0.001 to 0.1 mm. 18. The CMP pad conditioner of claim 17, wherein a height difference between the upper fixing regions and the lower fixing regions is set to 0.002 to 0.02 mm. 18. The CMP pad conditioner of claim 17, wherein a height difference between the upper fixing regions and the lower fixing regions is set to 0.005 to 0.01 mm. 18. The CMP pad conditioner of claim 17, wherein at least one of the upper fixing regions is formed in a stepped structure having different heights. 18. The CMP pad conditioner of claim 17, wherein at least one of the lower fixation regions is formed in a stepped structure having different heights.

Images