KR20100097823A - Canister for processing semiconductor - Google Patents

Canister for processing semiconductor Download PDF

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Publication number
KR20100097823A
KR20100097823A KR1020090016669A KR20090016669A KR20100097823A KR 20100097823 A KR20100097823 A KR 20100097823A KR 1020090016669 A KR1020090016669 A KR 1020090016669A KR 20090016669 A KR20090016669 A KR 20090016669A KR 20100097823 A KR20100097823 A KR 20100097823A
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KR
South Korea
Prior art keywords
canister
carrier gas
gas
container
source
Prior art date
Application number
KR1020090016669A
Other languages
Korean (ko)
Inventor
최건수
Original Assignee
서일이앤엠 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서일이앤엠 주식회사 filed Critical 서일이앤엠 주식회사
Priority to KR1020090016669A priority Critical patent/KR20100097823A/en
Publication of KR20100097823A publication Critical patent/KR20100097823A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

PURPOSE: A canister for semiconductor manufacturing process is provided to stop the manufacturing process if internal pressure and concentration rise up over the certain level by configuring a pressure gauge and a concentration gauge. CONSTITUTION: A liquid or source gas(2) is filled in a container(3). A carrier gas supply line(4) supplies the carrier gas to the inside of a canister(1). A feeding valve(5) controls supplying of the carrier gas supplied through the carrier gas supply line. The carrier gas flows into the container through a deep tube(6) according to the control of the supplying valve.

Description

Canister for processing semiconductor

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a canister for a semiconductor manufacturing process, and in particular, one of the thin film deposition methods, the source gas in the atomic layer deposition (ALD) and chemical vapor deposition (CVD) chemical vapor deposition (CVD) reaction chamber of the deposition apparatus. It is a technology that can detect the pressure and gas concentration of the canister for semiconductor manufacturing process to be supplied.

In general, a process of depositing a thin film required on a silicon wafer or a glass substrate is required in semiconductor device manufacturing or flat panel display manufacturing.

In recent years, as the degree of integration of semiconductor devices increases, there is a demand for a method capable of depositing a thin film having a uniform step coverage, a high aspect ratio, and a uniform thickness.

Atomoc layer deposition (ALD) is used as one of such thin film deposition methods. Atomic layer deposition is an atom on a substrate by sequentially flowing gases of two kinds of source materials into the reaction chamber sequentially. The method is to deposit and grow a layer to form a thin film of desired thickness.

On the other hand, since most source materials are liquid or solid at room temperature, it is necessary to vaporize the materials before supplying them into the reaction chamber of the atomic layer deposition apparatus.

Therefore, a canister for supplying a source gas into the reaction chamber is used in the atomic layer deposition apparatus. This canister vaporizes a liquid precursor to generate a source gas, and then supplies the source gas into the reaction chamber.

In addition, it is very important for the atomic layer deposition method that the source is not deteriorated and the source is moved to the chamber in gaseous or vapor state. This is because the vapor pressure of the source generated when the source stored in the canister is depleted decreases so that the deposition rate of the thin film is increased. Because it is slow.

Consequently, adequate control of the source level, pressure and concentration of the canisters containing these deposition sources is required.

1 is an internal structural view of a canister according to the prior art, wherein the canister 30 forms an outer shape and seals a container 32 filled with a liquid or gas source 31, and seals an upper portion of the container 32. The cover 40 includes a carrier gas supply line 33 for supplying a carrier gas to the interior of the 30, and a discharge line 34 for discharging a liquid or gas source generated in the container 32. do.

However, the conventional canister 30 having such a configuration can detect only the level of the source 31 in the container 32, and there is no means for detecting the pressure of the canister 30 and the concentration of the source 31. When the pressure inside the canister 30 rises, the discharge line 34 and the diaphragm are bonded to each other, and thus the discharge line is not opened, causing a decrease in semiconductor production efficiency and a time loss.

In addition, as semiconductors become more integrated, many new sources are being developed. These sources may mix multiple sources as well as a single source. Therefore, when the pressure in the canister is out of the allowable range, each source may be deteriorated and affect the source quality. To remedy this problem, a means is needed to monitor the canister interior to maintain a constant pressure.

In addition to the problems with the canister internal pressure, the conventional canister 30 also has no means of sensing the concentration of the source 31 inside the canister 30, so that a mixed source, rather than a single source, may be stored in the canister 30. In the case of inadequate mixing concentration, it causes a decrease in semiconductor production efficiency.

Therefore, the present invention has been made to solve the problems related to the conventional canister for semiconductor manufacturing process, an object of the present invention is to configure the canister internal pressure and the mixed concentration detection means of the source.

The canister for a semiconductor manufacturing process of the present invention for achieving the above object, the container forming a contour forming a certain space and filled with a liquid or gas source; A carrier gas supply line which seals an upper portion of the container and supplies a carrier gas into the canister; A supply valve for controlling supply and blocking of the container of the carrier gas supplied through the carrier gas supply line; A dip tube introducing a carrier gas into the container by controlling the supply valve; A discharge line for discharging the liquid or gas source generated in the vessel; A discharge valve controlling discharge and blocking of the source gas discharged through the discharge line to the outside; A dip tube inducing the source gas to be discharged to the outside by the control of the discharge valve; A cover including a supply line and a discharge line for supplying the carrier gas and discharging the source gas; And a pressure gauge for measuring the internal pressure of the vessel.

Pressure gauge of the present invention is characterized in that attached to the cover.

The canister for a semiconductor manufacturing process of the present invention for achieving the above object, the container forming a contour forming a certain space and filled with a liquid or gas source; A carrier gas supply line which seals an upper portion of the container and supplies a carrier gas into the canister; A supply valve for controlling supply and blocking of the container of the carrier gas supplied through the carrier gas supply line; A dip tube introducing a carrier gas into the container by controlling the supply valve; A discharge line for discharging the liquid or gas source generated in the vessel; A discharge valve controlling discharge and blocking of the source gas discharged through the discharge line to the outside; A dip tube inducing the source gas to be discharged to the outside by the control of the discharge valve; A cover including a supply line and a discharge line for supplying the carrier gas and discharging the source gas; And a concentration gauge for measuring the concentration of the mixed source gas inside the vessel.

Concentration gauge of the present invention is characterized in that attached to the cover.

The pressure and concentration measuring device of the canister for semiconductor manufacturing process of the present invention for achieving the above object is received in real time by receiving the source concentration in the container measured by the pressure and concentration gauge inside the container measured by the pressure gauge A control unit for comparing with pressure and reference concentration; A display unit which displays a result value processed by the comparison operation of the control unit; And an alarm unit configured to alarm a result value processed by the comparison operation of the controller.

The canister for semiconductor manufacturing process of this invention has the following outstanding effects.

First, if the internal pressure rises above a certain level by constructing a pressure gauge on the canister, the manufacturing process may be interrupted and appropriate actions may be taken to prevent a decrease in semiconductor production efficiency and time loss.

Second, by forming a concentration gauge on the canister, if the concentration is not correct, the manufacturing process can be stopped and appropriately taken to prevent the decrease in semiconductor production efficiency and time loss.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a structural diagram of a canister according to an embodiment of the present invention, Figure 3 is a configuration diagram of the mixed concentration detection of the pressure and source gas of the canister according to the embodiment of the present invention.

In FIG. 2, the canister 1 of the present invention forms an outer space forming a certain space and seals the container 3 filled with a liquid or gas source 2, and seals an upper portion of the container 3. 1) a supply valve 5 for controlling the supply and shutoff of the carrier gas supply line 4 for supplying the carrier gas to the inside of the container 1 and the container 3 of the carrier gas supplied through the carrier gas supply line 4; ), A dip tube 6 for introducing carrier gas into the container 3 under control of the supply valve 5, and a discharge for discharging liquid or gas (source) gas generated in the container 3. Line 7, a discharge valve 8 for controlling the discharge and shut off of the liquid or gas source discharged through the discharge line 7 and the liquid or gas by the control of the discharge valve (8) It comprises a dip tube (9) for inducing the source to be discharged to the outside.

The canister 1 of the present invention also comprises a cover 10 composed of a supply line 4 and a discharge line 7 for the supply of the carrier gas and for the discharge of a liquid or gas source.

The canister 1 of the present invention is also equipped with a pressure gauge 11 for measuring the internal pressure of the container 3 to a portion of the cover 10, and the mixed source gas (single gas) inside the container 3, The concentration gauge 12 which measures the density | concentration of the alcove) is attached.

The position of attachment of the pressure gauge 11 and the concentration gauge 12 to the cover 10 may be either inside or outside the container 3, and this technique does not constitute the subject matter of the present invention.

In addition, since the pressure gauge 11 measures the pressure inside the container 3, the pressure gauge 11 is configured to measure the pressure by a general pressure sensor or the like, and the concentration gauge 12 measures the concentration of the mixed source gas in the container 3. Since this is a measurement, it is configured so that the measuring range of the gauge can be reached to the deep part in the container (3) to improve accuracy.

In the above configuration, the positions of the supply line 4, the supply valve 5, the discharge line 7 and the discharge valve 8 may be changed depending on the process type.

On the other hand, in the case of bubbling type in the ALD or CVD process, the carrier gas supplied to the canister is vaporized by a heater jacket wound on the canister and supplied to the chamber as a gas source, and when not bubbling type, the carrier gas supplied to the canister 2 is a bubbling type bar is discharged to the liquid source is vaporized by the vaporizer and supplied to the chamber as a gas source. The jacket, the vaporizer and the chamber is a part that is configured after the discharge line of Figure 2, it will be omitted in the present invention.

As shown in FIG. 3, a pressure gauge 11 and a concentration gauge 12 are attached to the canister of the present invention to measure pressure and concentration, respectively.

According to FIG. 3, the pressure of the gas in the vessel 3 measured by the pressure gauge 11 and the concentration of the mixed source gas in the vessel 3 measured by the concentration gauge 12 are input in real time. The control unit 20 performing comparative operation on the pressure and the reference concentration, the display unit 21 displaying the result value processed by the comparison operation of the control unit 20, and the result value processed by the comparison operation of the control unit 20 The alarm unit 22 is configured to alarm.

The reference pressure and reference concentration will vary depending on the specifications of the future semiconductor manufacturing process and sources used therein.

The pressure and concentration measuring apparatus of the canister of the present invention configured as described above may display the pressure and concentration of the canister 1 through the display unit 21 displaying the processing result value of the control unit 20 and the alarm unit 22 which alarms. You can check in real time and take appropriate action based on the results.

The present invention described above has been described with reference to specific embodiments, but is not limited thereto. In particular, no distinction is made between the bubbling type and the non-bubbling type, and thus it is not necessary to distinguish whether the gas generated in the canister's container is liquid or gas. The technical scope of the present invention is not applied differently depending on the type of gas supplied to the canister's container and the type of gas generated inside the canister, and by accurately measuring the concentration and pressure of the gas, whether liquid or gas, to properly measure It is a subject of the present invention to be able to improve semiconductor manufacturing efficiency.

1 is an internal structure diagram of a canister according to the prior art.

2 is a structural diagram of a canister according to an embodiment of the present invention.

Figure 3 is a schematic diagram of detecting the concentration of the mixture of the pressure and source of the canister in accordance with an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

1: canister 2: source gas

3: container 4: supply line

5: Supply valve 6, 9: Dip tube

7: discharge line 8: discharge valve

10 cover 11 pressure gauge

12: concentration gauge 20; Control

21: display unit 22: alarm unit

Claims (5)

A container 3 forming an outer shape forming a predetermined space and filled with a liquid or gas source 2; A carrier gas supply line 4 which seals an upper portion of the container 3 and supplies a carrier gas into the canister 1; A supply valve 5 for controlling supply and blocking of the container 3 of the carrier gas supplied through the carrier gas supply line 4; A dip tube (6) for introducing a carrier gas into the container (3) by the control of the supply valve (5); A discharge line (7) for discharging the liquid or gas source generated in the vessel (3); A discharge valve 8 controlling discharge and blocking of the source gas discharged through the discharge line 7 to the outside; A dip tube (9) for inducing the source gas to be discharged to the outside by the control of the discharge valve (8); A cover 10 configured with a supply line 4 and a discharge line 7 for supplying the carrier gas and discharging the source gas; And Canister for semiconductor manufacturing process, characterized in that consisting of a pressure gauge (11) for measuring the internal pressure of the vessel (3). The canister for a semiconductor manufacturing process according to claim 1, wherein the pressure gauge (11) is attached to a cover (10). A container 3 forming an outer shape forming a predetermined space and filled with a liquid or gas source 2; A carrier gas supply line 4 which seals an upper portion of the container 3 and supplies a carrier gas into the canister 1; A supply valve 5 for controlling supply and blocking of the container 3 of the carrier gas supplied through the carrier gas supply line 4; A dip tube (6) for introducing a carrier gas into the container (3) by the control of the supply valve (5); A discharge line 7 for discharging the liquid or gaseous gas TM generated in the container 3; A discharge valve 8 controlling discharge and blocking of the source gas discharged through the discharge line 7 to the outside; A dip tube (9) for inducing the source gas to be discharged to the outside by the control of the discharge valve (8); A cover 10 configured with a supply line 4 and a discharge line 7 for supplying the carrier gas and discharging the source gas; And A canister for a semiconductor manufacturing process, characterized by comprising a concentration gauge (12) for measuring the concentration of the mixed gas inside the vessel (3). The canister for a semiconductor manufacturing process according to claim 5, wherein the concentration gauge (12) is attached to a cover (10). A control unit for receiving the pressure in the vessel 3 measured by the pressure gauge 11 and the source concentration in the vessel 3 measured by the concentration gauge 12 in real time, and comparing and comparing the reference pressure and the reference concentration with the reference pressure. 20); A display unit 21 for displaying a result value processed by the comparison operation of the control unit 20; The pressure and concentration measuring device of the canister for semiconductor manufacturing process, characterized in that it comprises an alarm unit 22 for alarming the result value processed by the comparison operation of the control unit (20).
KR1020090016669A 2009-02-27 2009-02-27 Canister for processing semiconductor KR20100097823A (en)

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KR1020090016669A KR20100097823A (en) 2009-02-27 2009-02-27 Canister for processing semiconductor

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KR1020090016669A KR20100097823A (en) 2009-02-27 2009-02-27 Canister for processing semiconductor

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KR20100097823A true KR20100097823A (en) 2010-09-06

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014171575A1 (en) * 2013-04-15 2014-10-23 데이스타 유한회사 Chiller for canister
US9057125B2 (en) 2012-08-10 2015-06-16 Samsung Display Co., Ltd. Canister

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9057125B2 (en) 2012-08-10 2015-06-16 Samsung Display Co., Ltd. Canister
WO2014171575A1 (en) * 2013-04-15 2014-10-23 데이스타 유한회사 Chiller for canister
CN105247655A (en) * 2013-04-15 2016-01-13 晨星原料有限责任公司 Chiller for canister
US9469461B2 (en) 2013-04-15 2016-10-18 Chemtura Corporation Chiller for canister

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