KR20100078435A

KR20100078435A - Cooling system of apparatus for manufacturing semiconductor device

Info

Publication number: KR20100078435A
Application number: KR1020080136696A
Authority: KR
Inventors: 강중배
Original assignee: 주식회사 동부하이텍
Priority date: 2008-12-30
Filing date: 2008-12-30
Publication date: 2010-07-08

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cooling system of semiconductor device manufacturing equipment, in particular, wherein a reservoir for storing pure deionized water (DIW) and heat exchange between pure deionized water and semiconductor manufacturing equipment supplied from the reservoir are provided. A heat exchanger having a heat exchanger, the temperature sensor for checking the temperature of the pure deionized water stored in the reservoir, and the resistance sensor for checking the purity of the pure deionized water stored in the reservoir is characterized in that the reservoir is mounted to be.

Description

Cooling system of apparatus for manufacturing semiconductor device

The present invention relates to semiconductor technology, and more particularly to a cooling system of semiconductor device manufacturing equipment.

1 is a view showing a general ion implantation equipment structure.

Referring to Figure 1 will be described the principle of ionization in the ion implantation process.

When a voltage of 0-10V is applied to the filament, a current of 0-60A flows. The filament is heated by the current to generate hot electrons.

The generated thermal electrons collide with the cathode (CATHODE) to emit a large amount of electrons, and the emitted electrons start to collide with gas molecules as they protrude into the inner wall of the arc chamber (ARC CHAMBER) to which a positive voltage is applied.

Source magnets (SOURCE MAGNET) are provided at the top and bottom of the arc chamber to actively collide with the gas molecules, by which the electrons rotate and cause more collisions.

A repeller plate is provided on the opposite side of the filament, and the repeller plate serves to maximize the collision with the gas molecules by returning the electrons which did not collide with the gas molecules among the rotating electrons. Do it.

The ions generated inside the arc chamber move from the slit (SLIT) to the EXTRACTION electrode structure, which consists of two separate SUPPRESSION electrodes.

The suppression electrode maintains 5KV at -1KV and maintains the potential difference between the ground electrodes.

The manipulator structure can move the extraction electrode in three directions according to the model in consideration of the arc chamber, and through this directional conversion, extraction of the ion beam, suppression of X-rays, and focusing of the ion beam (FOCUSING) ).

However, in the prior art, in the process of forming and focusing the ion beam, the desired ion beam cannot be extracted due to undesired redirection and other factors. There are two main causes of such a problem due to a manipulator and an external factor. One of the external factors is a decrease in the resistivity value according to the purity of the cooling water.

Conventional cooling system stores the process cooling water (PCW) in the reservoir (RESERVOIR) and supplies it to the heat exchanger through the pump, and after the heat exchanger generates heat exchange between the semiconductor manufacturing equipment and the PCW Cycle the PCW.

As described above, in the related art, PCW is supplied without supplying deionized water (DIW) as cooling water for cooling equipment or maintaining a constant temperature during the manufacturing process. In particular, PCW is supplied through DI filter. The problem is that there is no means for detecting the purity or specific resistance of the cooling water while passing through the DI filter through the reservoir RESERVOIR.

That is, in the conventional cooling equipment, only the storage level and the temperature of the coolant flow state reservoir RESERVOIR could be checked. And the purity of cooling water could not be measured.

If the coolant purity drops and the resistivity drops, the isolation between the terminal and ground area is broken, which in turn leads to arcing.

In particular, due to the nature of the ion implantation process, the equipment proceeds at a very high vacuum (ULTLA HIGH VACUUM (typically: 1.0E-6 torr or less) .If the vacuum is broken due to arcing, the quality of many wafers in the equipment being manufactured In terms of equipment, the controllers and turbopumps are damaged, which leads to enormous repair costs, even requiring replacement of the DI filter, thus ensuring a clean supply of coolant.

SUMMARY OF THE INVENTION An object of the present invention is to provide a cooling system for semiconductor device manufacturing equipment suitable for supplying high purity cooling water to form a more pure ion beam and a stable ion beam.

Another object of the present invention is to provide a cooling system of a semiconductor device manufacturing equipment that prevents the generation of arc in accordance with the decrease in the purity of the cooling water.

The cooling system of the semiconductor device manufacturing equipment according to the present invention for achieving the above object is characterized in that, the reservoir (RESERVOIR) for storing pure deionized water (DIW), and the heat exchange between the pure deionized water and the semiconductor manufacturing equipment supplied from the reservoir The heat exchanger is formed, the temperature sensor for checking the temperature of the pure deionized water stored in the reservoir, and the resistance sensor for checking the purity of the pure deionized water stored in the reservoir is mounted in the reservoir.

Preferably, the apparatus may further include a cooling line to the terminal part and a cooling line to the end station part to supply pure deionized water stored in the reservoir or to recover the deionized water to the reservoir.

According to the present invention, by directly supplying pure deionized water with high purity cooling water and checking the purity of the deionized water with a resistance sensor provided in the reservoir, it is possible to prevent the occurrence of arc due to the decrease in the coolant purity. As a result, a more pure ion beam can be formed and a stable ion beam can be formed.

In addition, it is possible to prevent damage to various controllers, turbo pumps or DI filters in terms of equipment, thereby reducing the cost of equipment maintenance.

Other objects, features and advantages of the present invention will become apparent from the detailed description of the embodiments with reference to the accompanying drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a configuration and an operation of an embodiment of the present invention will be described with reference to the accompanying drawings, and the configuration and operation of the present invention shown in and described by the drawings will be described as at least one embodiment, The technical idea of the present invention and its essential structure and action are not limited.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the cooling system of the semiconductor device manufacturing equipment according to the present invention.

2 is a view showing a cooling system of the semiconductor device manufacturing equipment according to the present invention.

Referring to FIG. 2, the cooling system according to the present invention is a heat exchange in which a heat exchange is performed between a reservoir 10 storing pure deionized water (DIW) and a pure deionized water supplied from the reservoir 10 and semiconductor manufacturing equipment. Several valves 100 and particle filters 110 are provided on a heat exchanger 60, a pure deionized water supply to the heat exchanger 60 and a return line to the reservoir 10.

In particular, in the present invention, the reservoir 10 includes a temp sensor 30 for checking the temperature of the deionized water stored therein, and a resistance sensor 20 for checking contamination, that is, purity of the deionized water in the reservoir 10. ).

In addition, the cooling system according to the present invention is provided with a cooling line (COOLING LINE) to the terminal (TERMINAL) and the end station (ENDSTATION) independently to supply and recover pure deionized water. Specifically, to recover the deionized water from the line 40 and the end station (ENDSTATION) for supplying pure deionized water to the end station (END) around the manifold (80) for changing the direction of the cooling line And lines (50, 51) for supplying pure deionized water to the terminal (TERMINAL) section and recovering deionized water from the terminal (TERMINAL) section independently of the lines (40, 41). . That is, a line 51 for supplying pure deionized water to the terminal unit around the manifold 80 for changing the direction of the cooling line and a line 50 for recovering deionized water from the terminal unit. ).

In particular, the line 51 for supplying the deionized water to the terminal which generates a lot of heat when forming the ion beam includes a source, an electrode, an analyzer, an accelerator column, a magnet, and a magnet. ) Is a line supplied to an assembly such as). This further enhances the isolation between the terminal portion and the ground area. This completely eliminates the possibility of leakage current.

On the other hand, in the present invention, the resistance sensor 20 mounted in the reservoir 10 enables to check the change in the specific resistance (Ω · CM) value by monitoring the deionized water stored in real time. It allows for quick replacement of emergency situations.

In addition, unlike the case of supplying PCW by supplying pure deionized water, the present invention does not require a DI filter, and only a particle filter 110 which removes only particles from the deionized water to be recovered is required.

In addition, the cooling system of the present invention may further include an automatic replenishment controller 90 for checking and automatically filling the storage level of the pure deionized water of the reservoir 10 or a pressure switch 120 for pressure check. Can be.

While the preferred embodiments of the present invention have been described so far, those skilled in the art may implement the present invention in a modified form without departing from the essential characteristics of the present invention.

Therefore, the embodiments of the present invention described herein are to be considered in descriptive sense only and not for purposes of limitation, and the scope of the present invention is shown in the appended claims rather than the foregoing description, and all differences within the scope are equivalent to Should be interpreted as being included in.

1 is a view showing a typical ion implantation equipment structure.

Claims

Pure deionized water (DIW) storage (RESERVOIR);

Is provided with a heat exchanger (Heat exchanger) is a heat exchange between the pure deionized water supplied from the reservoir and the semiconductor manufacturing equipment,

And a temperature sensor for checking the temperature of the pure deionized water stored in the reservoir, and a resistance sensor for checking the purity of the pure deionized water stored in the reservoir.

The method of claim 1,

Further comprising a cooling line to the terminal (TERMINAL) section and the cooling line to the end station (ENDSTATION) section, the semiconductor device manufacturing, characterized in that to supply pure deionized water stored in the reservoir or to recover the deionized water to the reservoir Cooling system of the equipment.