CN111681937B - Cold cathode penning ion source device for high-energy ion implanter - Google Patents
Cold cathode penning ion source device for high-energy ion implanter Download PDFInfo
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- CN111681937B CN111681937B CN202010515930.6A CN202010515930A CN111681937B CN 111681937 B CN111681937 B CN 111681937B CN 202010515930 A CN202010515930 A CN 202010515930A CN 111681937 B CN111681937 B CN 111681937B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Abstract
The invention discloses a cold cathode penning ion source device for a high-energy ion implanter, which comprises: ion source, extraction electrode, permanent magnet, cavity, wherein the ion source includes: the device comprises a protective cover, an anode seat, a cathode, a counter cathode, a cathode seat, insulating ceramic and a sleeve; the permanent magnet provides an axial magnetic field, the extraction electrode is electrified with high voltage to provide an electric field, and electrons oscillate back and forth in the axial direction under the action of the electric field between the cathode, the anode and the counter cathode of the ion source and do spiral motion under the action of the magnetic field; high-voltage interfaces are designed on the side surfaces of the cathode and the anticathode, and the same voltage is applied; the anode cover is grounded, and an air inlet pipeline and a lead-out opening are designed in the anode cover. According to the invention, the water cooling pipeline is designed in the anode seat and has a cleanable function, so that the temperature of the ion source anode cover can be indirectly reduced, the structure of the anode cover leading-out opening is optimized through beam dynamics simulation, the ion leading-out efficiency is greatly improved, and the ignition risk is reduced.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to a cold cathode penning ion source used by a high-energy ion implanter.
Background
One important process in semiconductor manufacturing is ion implantation. Ion implantation refers to the process of focusing, accelerating and deflecting ions from an ion source and irradiating the ions onto a target material to change the chemical or physical properties of the target material. In semiconductor manufacturing, the target material is typically doped, such as N-type or P-type doping, for example, using ion implantation.
An important component of an ion implanter is the ion source, and the quality and rate of generation of the plasma generated by the ion source will directly affect the quality and rate of the overall process. In the current ion source, an ECR ion source can easily obtain stronger ion beams, but has the problems of high-frequency power supply and microwave radiation, and can generate interference on related analytical instruments; the penning ion source has overhigh temperature in the using process, the service life of the cathode is short, the cathode needs to be frequently replaced, the connection stability of the cathode and the anode is poor, and the short circuit between the cathode and the anode is easy to cause. In order to solve the problems, a cold cathode penning ion source device is designed.
Disclosure of Invention
The invention aims to provide a cold cathode penning ion source device for a high-energy ion implanter, wherein a water cooling pipeline is designed in an anode seat of the device and has a cleanable function, so that the temperature of an anode cover of the ion source can be indirectly reduced; an insulating ceramic material is arranged between the anode and the cathode, so that short circuit between the cathode and the anode can be effectively avoided; the structural design of the anode cover improves the electric field intensity between the anode and the cathode; the structure of the anode cover leading-out opening is optimized through beam dynamics simulation, the ion leading-out efficiency is greatly improved, and the ignition risk is reduced; adopt detachable structural design, make things convenient for the washing and the change of ion source spare part.
The technical scheme of the invention is as follows: a cold cathode penning ion source device for a high-energy ion implanter is characterized by comprising: the ion source comprises a protective cover, a supporting copper column, a cathode, an anticathode, an insulating ceramic support, a high-voltage wire, an anode cover, an anode seat, a sleeve, a water pipe sealing assembly, a gas pipe sealing assembly and a gas pipe; the top of the ion source device is provided with an anti-collision protective cover which is fixed on the anode cover; the anode cover is grounded and fixed on the anode seat through a bolt, and an air pipe and a beam outlet are designed in the anode cover; the anode seat is fixed on the sleeve through a bolt, and a water pipe is designed in the anode seat; the cathode and the counter cathode are positioned in the anode cover, both of which are of T-shaped structures, and the side surfaces of the cathode and the counter cathode are provided with high-voltage interfaces which are connected with the same voltage by high-voltage wires; insulating ceramic supports are designed at two ends of the cathode and the anticathode to realize insulation between the cathode and the anode cover, and then the insulating ceramic supports are fixed by using supporting copper columns; water is introduced into the anode seat through a water pipe, and the sealing between the anode seat and the sleeve is realized by utilizing a water pipe sealing assembly; hydrogen is introduced into the anode seat and the anode cover through the gas pipe, and the gas pipe sealing assembly is utilized to realize the sealing between the anode seat and the sleeve; the position of the extraction electrode is opposite to the beam extraction port, a permanent magnet is arranged on the periphery of the cavity to provide an axial magnetic field, the cavity provides a vacuum environment, and ions generated by the ion source are pulled out under the action of the extraction electrode and are centered and focused under the action of the magnetic field generated by the permanent magnet.
Furthermore, the design water pipe in the anode seat has a cleanable function, the anode seat and the anode cover are made of oxygen-free copper, and the temperature of the ion source anode cover is indirectly reduced through heat conduction.
Furthermore, insulating ceramic materials are arranged between the anode cover and the cathode and between the anode cover and the counter cathode, and are used for avoiding short circuit between the cathode and the anode.
Furthermore, the anode cover adopts the design of the middle diameter-variable circular hole, so that the distance between the anode cover and the cathode and the anticathode is reduced, and the electric field intensity between the anode and the cathode is improved.
Furthermore, the structure of the beam outlet is optimized through beam dynamics simulation, namely the numerical values of the chamfer angle alpha of the beam outlet and the depth H of the beam outlet are changed, the ion extraction efficiency is improved, and the ignition risk is reduced.
Furthermore, the gas path of the ion source device adopts a sectional design, and the gas pipe is arranged at one side close to the cathode, so that the gas utilization rate is improved, and the generation speed of plasma is increased.
Furthermore, the water pipe, the high-voltage wire and the gas pipe of the ion source device are all designed into detachable structures, so that the cleaning and replacement of ion source parts are facilitated.
Furthermore, the cathode and the anticathode are designed in a T shape, so that the area for emitting electrons and the ionization collision times are increased.
Furthermore, the high-voltage wire of the ion source device is electrified with 1.5KV voltage.
The invention has the beneficial effects that: the ion source provided by the invention has higher ion extraction efficiency; the water cooling design can prolong the service life of the ion source; the sectional gas path design and the gas inlet is close to the cathode, so that the gas utilization rate can be improved, and the generation speed of plasma can be increased; the design of the anode cover improves the electric field intensity between the anode and the cathode; the detachable structural design facilitates cleaning and replacement of ion source parts.
Drawings
FIG. 1 is a block diagram of the apparatus of the present invention;
FIG. 2 is a block diagram of an ion source of the apparatus of the present invention;
FIG. 3 is a view showing the structure of a water cooling line of the apparatus of the present invention;
FIG. 4 is a gas line configuration of the apparatus of the present invention;
FIG. 5 is a view showing the structure of an anode cap outlet in the device of the present invention.
Reference numbers in the figures: 1-ion source, 2-extraction electrode, 3-permanent magnet, 4-cavity, 11-protective cover, 12-supporting copper column, 13-cathode, 14-anticathode, 15-insulating ceramic support, 16-high-voltage wire, 17-anode cover, 18-anode seat, 19-sleeve, 20-water pipe, 21-water pipe sealing component, 22-air pipe sealing component and 23-air pipe.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments, and all other embodiments obtained by a person skilled in the art based on the embodiments of the present invention belong to the protection scope of the present invention without creative efforts.
The invention provides a cold cathode penning ion source device for a high-energy ion implanter, which is shown in figures 1-3 and comprises: the ion source comprises an ion source 1, an extraction electrode 2, a permanent magnet 3, a cavity 4, a protective cover 11, a supporting copper column 12, a cathode 13, an anticathode 14, an insulating ceramic support 15, a high-voltage wire 16, an anode cover 17, an anode seat 18, a sleeve 19, a water pipe 20, a water pipe sealing assembly 21, a gas pipe sealing assembly 22 and a gas pipe 23.
The ion source device mainly comprises: the ion source 1, the extraction electrode 2, the permanent magnet 3 and the cavity 4. The extraction electrode 2 is electrified with high voltage to provide an electric field, the position of the extraction electrode 2 is opposite to the extraction opening of the anode cover, the permanent magnet 3 on the periphery of the cavity 4 provides an axial magnetic field, the cavity 4 provides a high vacuum environment, ions generated by the ion source 1 are pulled out under the action of the extraction electrode 2 and are centered and focused under the action of the magnetic field generated by the permanent magnet 3, and the possibility of ignition is reduced under the high vacuum environment in the cavity 4. The specific structure of the ion source 1 is shown in fig. 2.
The ion source in fig. 2 mainly includes: the device comprises a protective cover 11, a supporting copper column 12, a cathode 13, a counter cathode 14, an insulating ceramic support 15, a high-voltage wire 16, an anode cover 17, an anode seat 18, a sleeve 19, a water pipe 20, a water pipe sealing assembly 21, a gas pipe sealing assembly 22 and a gas pipe 23.
The top of the ion source is provided with an anti-collision protective cover 11 which is fixed on an anode cover 17; the anode cover 17 is grounded, an air inlet pipeline and a beam outlet are designed in the anode cover, and the anode cover is fixed on the anode seat 18 through three bolts; a water cooling structure is designed in the anode seat 18 and is fixed on the sleeve 19 through a bolt; the cathode 13 and the counter cathode 14 are positioned in the anode cover, both of which are of T-shaped structures, and the side surfaces of which are provided with high-voltage interfaces, and a high-voltage wire 16 is used for connecting the same voltage of 1.5 KV; insulating ceramic supports 15 are designed at two ends of the cathode 13 and the counter-cathode 14 to realize insulation with the anode cover 17, and then the insulating ceramic supports are fixed by using the supporting copper columns 12; water is introduced into the anode holder 18 through a water tube 20 and a seal between the anode holder 18 and the sleeve 19 is achieved by means of a water tube seal assembly 21. Hydrogen is introduced into the anode holder 18 and the anode cover 17 through the gas pipe 23, and sealing between the anode holder 18 and the sleeve 19 is achieved by the gas pipe seal assembly 22. Electrons emitted from the cathode 13 or the anticathode 14 are accelerated by an electric field between the cathode 13 and the anode cover 17 or an electric field between the anticathode 14 and the anode cover 17, decelerated and accelerated in the opposite direction before reaching the anticathode 14 or the cathode 13, that is, the electrons oscillate back and forth in the axial direction under the action of the electric field between the cathode 13 and the anode cover 17 and the anticathode 14 and make a spiral motion under the action of a magnetic field.
The voltages on the cathode 13 and the counter-cathode 14 are fed via high-voltage lines 16. Among other parts, the protective cover 11, the supporting copper column 12, the anode cover 17, the anode seat 18, the sleeve 19, the water pipe 20 and the air pipe 23 are all grounded, and good insulation between the cathode and the anode needs to be kept. The cathode should be made of a material with a large secondary electron emission coefficient and high temperature resistance, such as tantalum, molybdenum, lanthanum hexaboride, and the like.
The space inside the anode cap 17 is referred to as a discharge chamber. Gas (e.g., hydrogen) is injected from the gas pipe 23 and enters the discharge chamber through the gas passage of the anode cap 17. The electrons oscillating axially back and forth and moving helically ionize the gas entering the discharge chamber, causing it to dissociate, ionize and produce a plasma. Plasma generated in the discharge chamber is led out through a leading-out opening in the middle of the anode cover under the action of an electric field to form ion beam current, and the leading-out efficiency of ions can be improved by optimizing the structure of the leading-out opening of the anode cover.
In fig. 3, water flows from the sleeve 19 into the anode holder 18 through the water pipe 20 as indicated by the arrows and forms a circuit to cool the anode holder 18 and the anode cover 17. Utilize water pipe seal assembly 21 to realize the sealed between anode seat 18 and the sleeve pipe 19, water pressure normally is about 0.3Mpa, can wash the water route through dismantling water pipe seal assembly 21.
In fig. 4, hydrogen gas enters the anode holder 18 and the anode cover 17 from the sleeve 19 through the gas pipe 23 as indicated by arrows, and the seal between the anode holder 18 and the sleeve 19 is achieved by the gas pipe seal assembly 22. The gas path adopts a sectional design, and a gas inlet is close to the cathode, so that the gas utilization rate can be improved, and the generation speed of plasma can be increased;
fig. 5 is a structural view of an extraction opening of an anode cap, and the extraction efficiency of ions is maximized by optimizing two dimensions of an extraction opening cutting angle alpha and an extraction opening depth H.
Although illustrative embodiments of the present invention have been described above to facilitate the understanding of the present invention by those skilled in the art, it should be understood that the present invention is not limited to the scope of the embodiments, but various changes may be apparent to those skilled in the art, and it is intended that all inventive concepts utilizing the inventive concepts set forth herein be protected by the claims.
Claims (9)
1. A cold cathode penning ion source device for a high-energy ion implanter is characterized by comprising: the ion source comprises a protective cover, a supporting copper column, a cathode, an anticathode, an insulating ceramic support, a high-voltage wire, an anode cover, an anode seat, a sleeve, a water pipe sealing assembly, a gas pipe sealing assembly and a gas pipe; the top of the ion source device is provided with an anti-collision protective cover which is fixed on the anode cover; the anode cover is grounded and fixed on the anode seat through a bolt, and an air pipe and a beam outlet are designed in the anode cover; the anode seat is fixed on the sleeve through a bolt, and a water pipe is designed in the anode seat; the cathode and the counter cathode are positioned in the anode cover, both of which are of T-shaped structures, and the side surfaces of the cathode and the counter cathode are provided with high-voltage interfaces which are connected with the same voltage by high-voltage wires; insulating ceramic supports are designed at two ends of the cathode and the anticathode to realize insulation between the cathode and the anode cover, and then the insulating ceramic supports are fixed by using supporting copper columns; water is introduced into the anode seat through a water pipe, and the sealing between the anode seat and the sleeve is realized by utilizing a water pipe sealing assembly; hydrogen is introduced into the anode seat and the anode cover through the gas pipe, and the gas pipe sealing assembly is utilized to realize the sealing between the anode seat and the sleeve; the position of the extraction electrode is opposite to the beam extraction port, a permanent magnet is arranged on the periphery of the cavity to provide an axial magnetic field, the cavity provides a vacuum environment, and ions generated by the ion source are pulled out under the action of the extraction electrode and are centered and focused under the action of the magnetic field generated by the permanent magnet.
2. The device of claim 1, wherein the anode seat is internally provided with a water pipe and has a cleanable function, the anode seat and the anode cover are made of oxygen-free copper, and the temperature of the anode cover of the ion source is indirectly reduced through heat conduction.
3. The cold cathode penning ion source device for the high energy ion implanter according to claim 1, wherein an insulating ceramic material is disposed between the anode cover and the cathode and between the cathode cover and the anode cover to prevent short circuit from occurring between the cathode and the anode.
4. The cold cathode penning ion source device for the high-energy ion implanter according to claim 1, wherein the anode cover adopts a design of a middle diameter-variable circular hole, so that the distance between the anode cover and the cathode and the anticathode is reduced, and the electric field intensity between the anode and the cathode is improved.
5. The cold cathode penning ion source device for the high-energy ion implanter according to claim 4, characterized in that the structure of the beam extraction port is optimized through beam dynamics simulation, namely the numerical values of the cutting angle alpha of the beam extraction port and the depth H of the beam extraction port are changed, the extraction efficiency of ions is improved, and the ignition risk is reduced.
6. The cold cathode penning ion source device for the high energy ion implanter according to claim 1, wherein the gas path of the ion source device is designed in a sectional manner and the gas pipe is arranged at one side close to the cathode, so that the gas utilization rate is improved, and the generation speed of plasma is increased.
7. The cold cathode penning ion source device for the high-energy ion implanter according to claim 1, wherein a water pipe, a high-voltage wire and a gas pipe of the ion source device are all designed into a detachable structure, so that the cleaning and replacement of ion source parts are convenient.
8. The cold cathode penning ion source device for the high energy ion implanter according to claim 1, wherein the cathode and the counter cathode are designed in a T shape to increase the area for emitting electrons and the number of ionization collisions.
9. The cold cathode penning ion source device for the high energy ion implanter according to claim 1, wherein the high voltage wire of the ion source device is energized with 1.5 KV.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010515930.6A CN111681937B (en) | 2020-06-09 | 2020-06-09 | Cold cathode penning ion source device for high-energy ion implanter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010515930.6A CN111681937B (en) | 2020-06-09 | 2020-06-09 | Cold cathode penning ion source device for high-energy ion implanter |
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| CN111681937A CN111681937A (en) | 2020-09-18 |
| CN111681937B true CN111681937B (en) | 2021-04-06 |
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| CN113488364A (en) * | 2021-07-13 | 2021-10-08 | 迈胜医疗设备有限公司 | Multi-particle hot cathode penning ion source and cyclotron |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4931698A (en) * | 1988-04-12 | 1990-06-05 | Matsushita Electric Industrial Co., Ltd. | Ion source |
| CN1649077A (en) * | 2004-12-23 | 2005-08-03 | 北京中科信电子装备有限公司 | Long life ionic source of ion injection machine |
| CN103035464A (en) * | 2012-12-26 | 2013-04-10 | 苏州工业职业技术学院 | Hollow cathode tube with water-cooling effect |
| CN205845892U (en) * | 2016-07-27 | 2016-12-28 | 合肥中科离子医学技术装备有限公司 | A kind of cooling water circulation structure of stock ion source |
| CN207558737U (en) * | 2017-12-11 | 2018-06-29 | 合肥中科离子医学技术装备有限公司 | A kind of lanthanum hexaboride cold-cathode Penning ion source device |
| CN109830419A (en) * | 2019-01-24 | 2019-05-31 | 中国原子能科学研究院 | A kind of miniature Penning ion source |
-
2020
- 2020-06-09 CN CN202010515930.6A patent/CN111681937B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4931698A (en) * | 1988-04-12 | 1990-06-05 | Matsushita Electric Industrial Co., Ltd. | Ion source |
| CN1649077A (en) * | 2004-12-23 | 2005-08-03 | 北京中科信电子装备有限公司 | Long life ionic source of ion injection machine |
| CN103035464A (en) * | 2012-12-26 | 2013-04-10 | 苏州工业职业技术学院 | Hollow cathode tube with water-cooling effect |
| CN205845892U (en) * | 2016-07-27 | 2016-12-28 | 合肥中科离子医学技术装备有限公司 | A kind of cooling water circulation structure of stock ion source |
| CN207558737U (en) * | 2017-12-11 | 2018-06-29 | 合肥中科离子医学技术装备有限公司 | A kind of lanthanum hexaboride cold-cathode Penning ion source device |
| CN109830419A (en) * | 2019-01-24 | 2019-05-31 | 中国原子能科学研究院 | A kind of miniature Penning ion source |
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