KR20100078311A - Apparatus for inspecting a surface of semiconductor wafer - Google Patents

Apparatus for inspecting a surface of semiconductor wafer Download PDF

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Publication number
KR20100078311A
KR20100078311A KR1020080136538A KR20080136538A KR20100078311A KR 20100078311 A KR20100078311 A KR 20100078311A KR 1020080136538 A KR1020080136538 A KR 1020080136538A KR 20080136538 A KR20080136538 A KR 20080136538A KR 20100078311 A KR20100078311 A KR 20100078311A
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KR
South Korea
Prior art keywords
wafer
light
light source
wavelength
film quality
Prior art date
Application number
KR1020080136538A
Other languages
Korean (ko)
Inventor
배은한
Original Assignee
주식회사 동부하이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020080136538A priority Critical patent/KR20100078311A/en
Publication of KR20100078311A publication Critical patent/KR20100078311A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

Abstract

According to an embodiment of the present invention, a surface inspection apparatus for a semiconductor wafer includes a plurality of light source units 32, 34, 36, 38, and the light source units 32, 34, 36 that irradiate light of different wavelengths. A conversion unit 40 for horizontally converting the irradiation angle for each wavelength of light irradiated from each of the? 38 and reflecting the light whose irradiation angle is converted by the conversion unit 40 to the wafer 2. The beam splitter 12 and the objective lens 13 which transmits the light reflected by the beam split 12 to the inspection region of the wafer 2 and collects the diffracted light reflected by the wafer 2. And an image sensor unit 20 for inspecting image information of the rotation light collected by the objective lens 13.

According to the present invention, by selectively using a light source having the most suitable wavelength range according to the type of wafer film quality, it is possible to prevent the degradation of the inspection results and to reduce the occurrence of noise, thereby improving the reliability of the inspection results.

Description

Surface inspection apparatus for semiconductor wafers {APPARATUS FOR INSPECTING A SURFACE OF SEMICONDUCTOR WAFER}

The present invention relates to a surface inspection apparatus of a semiconductor wafer. More specifically, the present invention is to selectively use a light source having the most suitable wavelength range according to the type of wafer film quality to prevent the degradation of the test results and to reduce the occurrence of noise to increase the reliability of the test results semiconductor wafers It relates to a surface inspection apparatus of.

In general, a semiconductor wafer is subjected to a repeated etching process and a photoresist coating process to form a pattern.

In the etching process of forming a pattern on the semiconductor wafer as described above, a process of confirming whether the pattern is normally formed or inspecting particles and the like present on the surface of the semiconductor wafer is performed. Device.

1 is a schematic diagram showing the configuration of a surface inspection apparatus of a semiconductor wafer according to the prior art.

As shown in the drawing, a conventional semiconductor wafer surface inspection apparatus includes a light source 10 for illuminating light, a filter 11 for filtering light emitted from the light source 10, and a filter 11 passing through the filter 11. A beam splitter 12 that reflects light vertically onto the wafer 2, and transmits the light reflected by the beam splitter 12 to a region to be reflected of the semiconductor wafer 2, It consists of an objective lens 13 for collecting the diffracted light reflected from the inspection region of the wafer 2 and an image detection sensor unit 20 for inspecting the image information of the diffracted light collected from the objective lens 13. Then, the image of the region to be inspected is recognized, the region neighboring the recognition region is recognized in the same manner, and the difference is recognized to detect the defect of the surface.

However, the conventional surface inspection apparatus of the semiconductor wafer is processing the image of the wafer surface through the image detection sensor using a lamp as a light source, depending on the type of wafer film quality Even if the test cannot be performed or the test is performed, the sensitivity of the test result is inferior as the sensitivity of the device or the noise occurs.

Therefore, one object of the present invention is to selectively increase the reliability of the inspection results by preventing the quality of the inspection results and reducing the occurrence of noise by selectively using a light source having the most suitable wavelength range according to the type of wafer film. The present invention provides a surface inspection apparatus for a semiconductor wafer.

The surface inspection apparatus of the semiconductor wafer according to the present invention includes a plurality of light source units for irradiating light of different wavelengths, a conversion unit for horizontally converting the irradiation angle for each wavelength of light irradiated from each of the light source units, and the conversion unit A beam splitter for reflecting light converted by the irradiation angle to the wafer, an objective lens for transmitting the light reflected from the beam split to the inspection region of the wafer, and collecting diffracted light reflected from the wafer; It includes an image sensor unit for inspecting the image information of the rotation light collected from the objective lens.

The converting unit is a prism, and the wavelength of each light of the light source unit is in the range of 380 nm to 780 nm, and when the film quality of the wafer is a metal layer and a high inspection quality is required, the light source unit having the light wavelength of 680 nm to 780 nm is used. When the film quality of the wafer is a nitride film, a light source unit having a wavelength of 480 nm to 580 nm is used, and when the film quality of the wafer is an oxide film, a light source unit having a wavelength of 380 nm to 480 nm is used. When the film quality is polyfilm or other film quality, a light source having a wavelength of 580 nm to 680 nm is used.

According to the present invention, by selectively using a light source having the most suitable wavelength range according to the type of wafer film quality, it is possible to prevent the degradation of the inspection results and to reduce the occurrence of noise, thereby improving the reliability of the inspection results.

Hereinafter, an apparatus for inspecting a surface of a semiconductor wafer according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below. Those skilled in the art can implement the present invention in various other forms without departing from the technical spirit of the present invention.

FIG. 2 is a schematic view showing the configuration of a surface inspection apparatus of a semiconductor wafer according to an embodiment of the present invention, and FIG. 3 is a block diagram of the image detection sensor unit of FIG. 2.

2, a surface inspection apparatus of a semiconductor wafer according to an embodiment of the present invention includes a plurality of light source units 32, 34, 36, 38, and the light source unit 32 for irradiating light of different wavelengths. Filter 11 for filtering the light irradiated from each of the (34) (36) (38), and the conversion unit 40 for horizontally converting the irradiation angle for each wavelength of the light filtered by the filter (11) And a beam splitter 12 that reflects the light whose irradiation angle is converted by the conversion unit 40 perpendicularly to the wafer 2, and the light reflected by the beam split 12. An objective lens 13 for transmitting diffracted light reflected from the wafer 2 and an image detection sensor unit 20 for inspecting image information of the diffracted light collected from the objective lens 13. Include.

In the present invention, a prism is used as the conversion unit 40, and the wavelength of each of the light sources 32, 34, 36 and 38 is preferably in the range of 380 nm to 780 nm. This is because less than 380nm is in the ultraviolet region, and more than 780nm is in the infrared region, and these regions are not recognized by the prism.

According to the present invention, the surface of the wafer is selectively inspected using light source parts 32 to 38 having the most appropriate wavelengths depending on the film quality of the wafer 2 to be inspected. For example, when the film quality of the wafer 2 to be inspected is a metal layer, this metal layer requires high inspection quality. Therefore, in the case of the metal layer film quality, the light source part 38 having a wavelength of light of 680 nm to 780 nm is used, and the light source part 34 having a wavelength of light of 480 nm to 580 nm when the film quality of the wafer 2 is a nitride film. In the case where the film quality of the wafer 2 is an oxide, the light source unit 32 having a wavelength of light of 380 nm to 480 nm is used. At this time, the light source 32 has a shortest wavelength of 380 to 480 nm, and thus is resistant to noise. In addition, when the film quality of the wafer 2 is a poly film quality or other film quality, the light source part 36 whose wavelength of light is 580 nm-680 nm is used.

3 illustrates a detailed configuration of the image detection sensor unit of FIG. 2. The image detection sensor unit 20 includes a time delay image sensor 24 for inspecting image information of the diffracted light collected by the objective lens 13, and the TDI sensor 24 to amplify the image information of the diffracted light. It consists of a phase changer 25 interposed between the objective lens 13 and a zoom lens 26, and a review camera for reviewing the amplified image information.

The semiconductor wafer surface inspection apparatus of the present invention configured as described above selects a light source unit having the most suitable wavelength according to the film quality of the wafer 2 to be inspected, and the wafer to be inspected in the same manner as in the prior art by the light from the selected light source unit. The inspection area is irradiated to recognize the image, the area adjacent to this recognition area is recognized in the same way, and then the difference is detected to detect the defect of the surface. Eliminates reliability deterioration.

In the detailed description of the present invention described above with reference to the embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge in the scope of the present invention described in the claims and It will be appreciated that various modifications and variations can be made in the present invention without departing from the scope of the art.

1 is a schematic view showing the configuration of a surface inspection apparatus of a conventional semiconductor wafer,

2 is a schematic diagram showing the configuration of a surface inspection apparatus of a semiconductor wafer according to one embodiment of the present invention;

3 is a configuration diagram of the image detection sensor unit of FIGS. 1 and 2.

<Explanation of symbols for the main parts of the drawings>

10 light source 11 filter

12: beam splitter 13: objective lens

20: image detection sensor unit 24: TDI sensor

25: phase shifter 26: zoom lens

32, 34, 36, 38: light source unit 40 of the present invention: conversion unit

Claims (3)

As a surface inspection apparatus of a semiconductor wafer, A plurality of light source units for irradiating light of different wavelengths, A conversion unit for horizontally converting an irradiation angle for each wavelength of light irradiated from each of the light source units; A beam splitter for reflecting the light whose radiation angle is converted by the conversion unit to the wafer; An objective lens for transmitting the light reflected from the beam split to the inspection region of the wafer, and collecting the diffracted light reflected from the wafer; An image sensor unit for inspecting the image information of the rotation light collected by the objective lens Surface inspection apparatus for semiconductor wafers. The method of claim 1, The conversion unit is a prism, the wavelength of each light of the light source unit is characterized in that the range of 380nm ~ 780nm Surface inspection apparatus for semiconductor wafers. The method of claim 1, When the film quality of the wafer is a metal layer and a high inspection quality is required, a light source having a wavelength of 680 nm to 780 nm is used. When the film quality of the wafer is a nitride film, a light source having a wavelength of 480 nm to 580 nm is used, When the film quality of the wafer is an oxide film, a light source having a wavelength of 380 nm to 480 nm is used, When the film quality of the wafer is poly film quality or other film quality, a light source having a wavelength of 580 nm to 680 nm is used. Surface inspection apparatus for semiconductor wafers.
KR1020080136538A 2008-12-30 2008-12-30 Apparatus for inspecting a surface of semiconductor wafer KR20100078311A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080136538A KR20100078311A (en) 2008-12-30 2008-12-30 Apparatus for inspecting a surface of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080136538A KR20100078311A (en) 2008-12-30 2008-12-30 Apparatus for inspecting a surface of semiconductor wafer

Publications (1)

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KR20100078311A true KR20100078311A (en) 2010-07-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013177477A1 (en) * 2012-05-25 2013-11-28 Kla-Tencor Corporation Photoemission monitoring of euv mirror and mask surface contamination in actinic euv systems

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013177477A1 (en) * 2012-05-25 2013-11-28 Kla-Tencor Corporation Photoemission monitoring of euv mirror and mask surface contamination in actinic euv systems
US9453801B2 (en) 2012-05-25 2016-09-27 Kla-Tencor Corporation Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems

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