KR20100077955A - Chemical mechanical polishing apparatus, cleaning device of pad conditioner for the same and cleaning method thereof - Google Patents

Chemical mechanical polishing apparatus, cleaning device of pad conditioner for the same and cleaning method thereof Download PDF

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Publication number
KR20100077955A
KR20100077955A KR1020080136050A KR20080136050A KR20100077955A KR 20100077955 A KR20100077955 A KR 20100077955A KR 1020080136050 A KR1020080136050 A KR 1020080136050A KR 20080136050 A KR20080136050 A KR 20080136050A KR 20100077955 A KR20100077955 A KR 20100077955A
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KR
South Korea
Prior art keywords
cleaning
supply unit
cleaning plate
pure water
megasonic
Prior art date
Application number
KR1020080136050A
Other languages
Korean (ko)
Inventor
박찬호
Original Assignee
주식회사 동부하이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020080136050A priority Critical patent/KR20100077955A/en
Publication of KR20100077955A publication Critical patent/KR20100077955A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
    • B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0288—Ultra or megasonic jets

Abstract

Embodiments relate to a chemical mechanical polishing apparatus, a cleaning apparatus for the pad conditioner thereof, and a cleaning method. In the cleaning device for a pad conditioner having a diamond disk of the pad conditioner of the chemical mechanical polishing apparatus according to an embodiment, a cleaning plate having a plurality of holes corresponding to the cleaning surface of the diamond disk, mega supplying megasonic into the cleaning plate A sonic supply section, a nitrogen supply section for supplying nitrogen gas into the cleaning plate, and a pure water supply section for supplying pure water into the cleaning plate. Thus, the embodiment has the effect of increasing the cleaning effect of the pad conditioner in the chemical mechanical polishing device to extend the life and to increase the pad conditioning effect in a short time.

Description

Chemical mechanical polishing apparatus, cleaning device of pad conditioner for the same and cleaning method

Embodiments relate to a chemical mechanical polishing apparatus, a cleaning apparatus for the pad conditioner thereof, and a cleaning method.

As the degree of integration of semiconductor devices increases, the multi-layered wiring process is put into practical use, thereby securing a margin of the photolithography process. In order to minimize the wiring length, global planarization technology for the material layer on the chip is required. Currently, methods for planarizing the underlying structure include boron-phospho-silicate glass (BPSG) reflow, aluminum (Al) flow, and spin on glass (SOG). Etch back, CMP process, etc. are used.

Among them, the chemical mechanical polishing process is an abrasive for polishing a wafer by chemically and physically polishing the surface of the chip by chemical components in a slurry solution and a pad and abrasive physical components for polishing the wafer. As a method of planarization, global planarization and low temperature planarization of a large space area which cannot be achieved by a reflow process or an etch back process are attained as a prominent planarization technology in next-generation semiconductor devices.

In the chemical mechanical polishing process, the surface of the wafer to be polished is brought into close contact with a rotating polishing pad, and a slurry containing abrasive and chemical is injected between the wafer and the polishing pad to planarize the surface of the wafer.

The chemical mechanical polishing apparatus includes a pad conditioner that micro-cuts the surface of the polishing pad so that new pores appear on the surface.

The pad conditioner is located on the upper surface of the poly-phase pad and serves to form micropores on the surface of the polishing pad by micro-cutting the surface of the polishing pad so that numerous foamed pores containing slurry on the surface of the polishing pad are not blocked. Rotating in contact with the surface of the polishing pad forms new pores in the surface of the polishing pad.

As such, the pad conditioner has a diamond disk formed at the bottom of the pad conditioner, wherein diamond particles adhered to the diamond disk are released during polishing pad conditioning, or slurry adhered to the diamond disk during polishing pad conditioning is fixed to the diamond disk during the polishing process. And desorption, causing problems of scratching the wafer at the polishing pad surface.

The embodiment provides a chemical mechanical polishing apparatus, a cleaning apparatus for a pad conditioner thereof, and a cleaning method for enhancing the cleaning effect of a diamond disk of a conditioner conditioning a polishing pad in a chemical mechanical polishing apparatus.

In the cleaning device for a pad conditioner having a diamond disk of the pad conditioner of the chemical mechanical polishing apparatus according to an embodiment, a cleaning plate having a plurality of holes corresponding to the cleaning surface of the diamond disk, mega supplying megasonic into the cleaning plate A sonic supply section, a nitrogen supply section for supplying nitrogen gas into the cleaning plate, and a pure water supply section for supplying pure water into the cleaning plate.

In the cleaning method of the pad conditioner of the chemical mechanical polishing apparatus according to the embodiment, the cleaning surface of the diamond disk of the pad conditioner is disposed facing the cleaning plate, the megasonic through a plurality of holes formed in the upper surface of the cleaning plate, Injecting the cleaning liquid mixed with nitrogen gas and pure water to the cleaning surface of the diamond disk.

The chemical mechanical polishing apparatus according to the embodiment includes a polishing pad, a slurry supply unit for supplying a slurry onto the polishing pad, a wafer carrier for polishing a wafer on the polishing pad, and a top surface of the polishing pad. A pad conditioner having an almond disc, a cleaning plate disposed around the polishing pad and having a plurality of holes in an upper surface thereof, a megasonic supply unit supplying megasonic into the cleaning plate, a nitrogen supply unit supplying nitrogen gas into the cleaning plate, and the A pure water supply for supplying pure water into the cleaning plate.

The embodiment can increase the cleaning effect of the diamond disk of the conditioner conditioning the polishing pad in the chemical mechanical polishing apparatus, thereby preventing a problem such as scratching the wafer.

The embodiment has the effect of increasing the cleaning effect of the pad conditioner in the chemical mechanical polishing device to extend the life and to increase the pad conditioning effect in a short time.

Hereinafter, a cleaning apparatus and a cleaning method of a pad conditioner of a chemical mechanical polishing apparatus according to an embodiment will be described in detail with reference to the accompanying drawings.

In the description of the embodiments, where described as being formed "on / over" of each layer, the on / over may be directly or through another layer ( indirectly) includes everything formed.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

1 is a perspective view showing a chemical mechanical polishing apparatus according to an embodiment.

2 is an enlarged cross-sectional view of a cleaning device for a pad conditioner of the chemical mechanical polishing apparatus according to the embodiment, and FIG. 3 is a perspective view showing a cleaning plate of the pad conditioner according to the embodiment.

Referring to FIG. 1, a polishing pad 110 is provided on an upper portion of the platen. In addition, a wafer carrier 120 and a pad conditioner 130 are installed on the upper side of the polishing pad 110 so as to swing left and right, and the slurry supply unit 140 supplying the polishing pad 110 and pure water are supplied. The ultrapure water supply unit 150 is installed.

The pad conditioner 130 is provided with a conditioning head 131 having a diamond disk 132, and a drive unit 133 for driving the conditioning head 131 up and down.

In operation, when the wafer carrier 120 loaded with the wafer moves to the upper side of the polishing pad 110 and contacts the polishing pad 110, the wafer carrier 120 rotates and lifts at a predetermined speed so that polishing of the wafer is performed. In addition, the pad conditioner 130 also swings upward of the polishing pad 110 to polish the slurry supplied to the slurry supply unit 140 with respect to the polishing pad 110, and then the ultrapure water supply unit 150. Ultra pure water is polished with ultra pure water supplied through

2 and 3, the pad conditioner 130 is an apparatus for optimizing the state of the pad so that polishing of the wafer is normally performed in the polishing pad 110, and not only flattens the state of the polishing pad 110. Particles generated by slurry solution or polishing are laminated on the pad to prevent dullness of the pad, to maintain a constant surface roughness of the pad, and to evenly disperse the slurry solution.

The pad conditioner 130 performs a cleaning process to remove foreign substances such as slurry and sludge adhered to the surface of the diamond disk 132 before or after the operation of planarizing the polishing pad.

The cleaning process is performed in the cleaning device 160 disposed around the polishing pad 110. The cleaning device 160 according to the embodiment includes a cleaning plate 161 on which the diamond disk 132 may be disposed. Include.

The cleaning plate 161 may have a plurality of holes 165 formed on an upper surface thereof, and the cleaning liquid may be injected through the holes 165.

A sidewall of a predetermined height may be formed along the outer circumferential surface of the shanghai cleaning plate 161, and the cleaning liquid sprayed from the cleaning plate 161 impinges on the cleaning plate 161 or on the diamond disk 132, and then the polishing pad ( 110) or it may be prevented from being thrown into the wafer to cause a defect.

The plurality of holes 165 may be disposed with regularity, and the cleaning liquid sprayed through the holes 165 may be uniformly pressured and uniformly sprayed on the cleaning surface of the diamond disk 132 disposed thereon. Is provided.

In order to supply the cleaning liquid into the cleaning plate 161, the cleaning plate 161 is connected to the megasonic supply unit 171, the nitrogen supply unit 172, and the pure water supply unit 173.

The megasonic supply unit 171 is supplied with megasonic through the first connection pipe 191, the nitrogen supply unit 172 is supplied with nitrogen gas through the second connection pipe 192, and the pure water supply unit 173. ) Is connected via the third connector 193.

The first connection pipe 191 may control the supply and shut down of the megasonic by the first valve 181, the second connection pipe 192 is supplied and supplied with nitrogen gas by the second valve (182) The blocking can be controlled, and the third connecting pipe 193 can control the supply and blocking of pure water by the third valve 183.

The first to third connecting pipes 191, 192, and 193 are combined into an integrated connecting pipe 195, and finally, a cleaning liquid is supplied to the lower portion of the cleaning plate 161 through the integrated connecting pipe 195. .

In addition, the cleaning liquid is sprayed from the lower portion of the cleaning plate 161 to the upper portion of the cleaning plate 161 and sprayed to the front surface of the cleaning surface of the diamond disk 132 to perform a complete cleaning in a short time.

The nitrogen gas allows the pure water to be injected at a strong water pressure toward the diamond disk 132 through the integrated connector 195, the cleaning plate 161.

The plane size of the cleaning plate 161 may be equal to or larger than the plane size of the diamond disk 132.

Holes 165 formed in the cleaning plate 161 may be disposed radially from the center.

Although not shown, the cleaning liquid sprayed from the cleaning plate 161 to clean the diamond disc 132 may be discharged through a pipe connected to the cleaning plate 161.

As such, the embodiment may increase the cleaning effect of the diamond disk 132 of the conditioner conditioning the polishing pad 110 in the chemical mechanical polishing apparatus 100, thereby preventing a problem such as scratching the wafer.

The embodiment has the effect of increasing the cleaning effect of the pad conditioner in the chemical mechanical polishing device to extend the life and to increase the pad conditioning effect in a short time.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the art that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.

1 is a perspective view showing a chemical mechanical polishing apparatus according to an embodiment.

Figure 2 is an enlarged cross-sectional view showing a cleaning device of the pad conditioner of the chemical mechanical polishing apparatus according to the embodiment.

3 is a perspective view showing a cleaning plate of the pad conditioner according to the embodiment.

Claims (9)

In the cleaning apparatus of the pad conditioner having a diamond disk, A cleaning plate having a plurality of holes corresponding to the cleaning surface of the diamond disk; A megasonic supply unit supplying megasonic into the cleaning plate; A nitrogen supply unit supplying nitrogen gas into the cleaning plate; And And a pure water supply unit for supplying pure water into the cleaning plate. The method of claim 1, And the plurality of holes are radially disposed at the center of the upper surface of the cleaning plate. The method of claim 1, And the megasonic supply unit, the nitrogen supply unit, and the pure water supply unit are mixed through an integrated connection pipe and supplied into the plate. The method of claim 3, The megasonic supply unit is connected to the integrated connector through a first connector, the nitrogen supply unit is connected to the integrated connector through a second connector, and the pure water supply unit is connected to the integrated connector through a third connector. Cleaning device for the pad conditioner of the chemical mechanical polishing device, characterized in that connected to the pipe. The method of claim 4, wherein A first valve controlling supply and shut-off of the megasonic in the first connection pipe; A second valve controlling the supply and shutoff of the nitrogen from the second connecting pipe; And And a third valve for controlling the supply and shutoff of the pure water in the third connecting pipe. The cleaning surface of the diamond disk of the pad conditioner is disposed opposite the cleaning plate; And spraying a cleaning liquid mixed with megasonic, nitrogen gas and pure water to the cleaning surface of the diamond disk through a plurality of holes formed in the upper surface of the cleaning plate. Polishing pads; A slurry supply unit supplying a slurry onto the polishing pad; A wafer carrier for performing polishing on the wafer above the polishing pad; A pad conditioner having a diamond disk to planarize the top surface of the polishing pad; A cleaning plate disposed around the polishing pad and having a plurality of holes in an upper surface thereof; A megasonic supply unit supplying megasonic into the cleaning plate; A nitrogen supply unit supplying nitrogen gas into the cleaning plate; And And a pure water supply unit for supplying pure water into the cleaning plate. The method of claim 7, wherein An integrated connector connected to the megasonic supply unit, the nitrogen supply unit and the pure water supply unit such that the megasonic, the nitrogen gas, and the pure water are mixed and uniformly sprayed through the holes of the cleaning plate to the cleaning surface of the diamond disc. The chemical mechanical polishing apparatus, characterized in that connected to the cleaning plate. The method of claim 7, wherein And the plurality of holes are radially disposed at the center of the upper surface of the cleaning plate.
KR1020080136050A 2008-12-29 2008-12-29 Chemical mechanical polishing apparatus, cleaning device of pad conditioner for the same and cleaning method thereof KR20100077955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080136050A KR20100077955A (en) 2008-12-29 2008-12-29 Chemical mechanical polishing apparatus, cleaning device of pad conditioner for the same and cleaning method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080136050A KR20100077955A (en) 2008-12-29 2008-12-29 Chemical mechanical polishing apparatus, cleaning device of pad conditioner for the same and cleaning method thereof

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KR20100077955A true KR20100077955A (en) 2010-07-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109397007A (en) * 2018-10-26 2019-03-01 中国科学院上海光学精密机械研究所 A kind of new and effective thermal field regulation polishing machine and its polishing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109397007A (en) * 2018-10-26 2019-03-01 中国科学院上海光学精密机械研究所 A kind of new and effective thermal field regulation polishing machine and its polishing method
CN109397007B (en) * 2018-10-26 2024-03-01 中国科学院上海光学精密机械研究所 Novel efficient thermal field regulating and controlling polishing machine and polishing method thereof

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