KR20100044988A - Device for removing particle on polishing pad in cmp device - Google Patents

Abstract

PURPOSE: A polishing pad foreign materials removing apparatus is provided to improve the productivity of a semiconductor element by smoothly removing foreign materials existing on the surface of a polishing pad after the chemical-mechanical polishing processing. CONSTITUTION: A plurality of injection nozzles(210) sprays high pressure deionized water to the surface of a pad. The deionized water supplying part supplies the deionized water to the injection nozzle. The injection nozzle is installed between wafer carriers which are rotated. The injection nozzle is combined in a holder(215) in order to be separated. In the side of the injection nozzle, a plurality of projections(210a) are formed. In the holder, a groove(215a) is formed in order to be corresponded to the projection.

Description

Device for removing particle on polishing pad in CMP device

The present invention relates to an apparatus for removing foreign matter from a polishing pad of a chemical mechanical polishing apparatus. More particularly, the present invention relates to a chemical mechanical polishing apparatus for preventing scratches on a wafer by smoothly removing foreign matter remaining on a surface of a polishing pad after a chemical mechanical polishing process is performed. The present invention relates to a polishing pad foreign material removing apparatus of a polishing equipment.

In recent years, as semiconductor devices have been highly integrated and metal wiring has been multilayered, the leveling effect of the planarization of the interlayer insulating film is gradually increasing, and the importance of the planarization process for the interlayer insulating film is increasing.

One of the methods applied to the planarization of the interlayer insulating film is a chemical mechanical polishing (hereinafter referred to as CMP).

1 is a plan view showing the overall configuration of a conventional CMP equipment, Figure 2 is a perspective view showing the appearance of a conventional CMP equipment, Figure 3 is a plan view and a partial enlarged view showing scratches occurring on the wafer after the conventional CMP process.

Referring to FIG. 1, the conventional CMP apparatus 1 includes a base body 10, a polishing pad 11 rotatably installed on an upper surface of the base body 10, and a rotation on an upper side of the base body 10. The wafer carrier 20 and the pad conditioner 30 are installed to allow the swing operation in the left and right directions. The slurry feeder 40 is configured to supply slurry on the polishing pad 11 at one side. Is installed.

In the conventional CMP apparatus 1 having such a configuration, the wafer W transferred by the wafer carrier 20 is rotated on the polishing pad 11 to mechanically planarize the surface of the wafer W, and at the same time, the slurry feeder 40 In (), chemical planarization is performed while supplying a slurry that performs a chemical reaction on the surface of the polishing pad 11.

On the other hand, due to the continuous driving of the CMP equipment 1, the polishing pad 11 is lowered the surface roughness gradually loses the polishing function, to prevent the use of the pad conditioner (30). This pad conditioner 30 is provided with a conditioning head 31 with a diamond disc so that the surface roughness of the polishing pad 11 can be kept constant at all times in order to achieve a more efficient polishing rate of the CMP process.

However, in the conventional CMP apparatus 1, only the pad conditioner 30 may have difficulty in completely removing foreign substances such as particles or slurry particles introduced from the outside on the polishing pad 11.

In this case, foreign matter remaining on the surface of the polishing pad 11 is scratched by the fine diamond particles of the pad conditioner 30 as shown in FIG. 3, such as a small dot or a circle. There is a problem that acts as a cause of scratches on the wafer (W).

The present invention has been made to solve the above problems, and provides a polishing pad foreign material removal device of the chemical mechanical polishing equipment to prevent scratches on the wafer by smoothly removing the foreign matter remaining on the surface of the polishing pad after the CMP process. Its purpose is to.

Polishing pad foreign matter removal apparatus of the chemical mechanical polishing equipment of the present invention for achieving the above object, the chemical for removing the foreign matter of the polishing pad to polish the wafer adsorbed and fixed to the radial wafer carrier using a slurry. A polishing pad debris removing device of a mechanical polishing equipment, comprising: a plurality of injection nozzles for spraying high pressure ultrapure water toward a surface of the pad; And an ultrapure water supply unit configured to supply ultrapure water to the injection nozzle. Characterized in that configured to include.

In this case, the injection nozzle is installed between the rotating wafer carrier.

The injection nozzle is characterized in that the fitting detachably coupled to the holder.

Polishing pad foreign matter removal apparatus of the chemical mechanical polishing equipment according to the present invention as described above can smoothly remove the foreign material on the surface of the polishing pad to prevent scratches on the wafer, thereby improving the productivity of the semiconductor device There is an advantage.

Hereinafter, the configuration and operation of the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Here, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are denoted by the same reference numerals as much as possible even if displayed on the other drawings.

Figure 4 is a plan view showing the configuration of the polishing pad debris removal device of the CMP apparatus according to the present invention, Figure 5 is a schematic side view of the polishing pad debris removal device.

4 and 5, the present invention is a wafer carrier 111 radially installed at a predetermined angle (for example 90 °) spaced below the rotating frame 110, and the suction fixed to the wafer carrier 111 Polishing pad 121 is rotatably installed on the upper surface of the base body 120 so that the wafer (W) to be polished using the slurry supplied from the slurry feeder 140, and the surface roughness of the polishing pad 121 The configuration of the CMP apparatus 100 including the pad conditioner 130 provided with the conditioning head 131 on one side so as to keep the constant at all times is the same as in the related art.

Here, a means for preventing scratches on the wafer W by smoothly removing the foreign matter remaining on the surface of the polishing pad 121 after the CMP process should be provided.

Polishing pad foreign matter removal apparatus 200 according to an embodiment of the present invention for implementing this is configured to include a spray nozzle 210, ultra-pure water supply (230).

The injection nozzle 210 sprays high pressure ultra pure water (DI Water) toward the surface of the polishing pad 121 to remove foreign substances such as slurry and external particles, and the injection nozzle 210 is a wafer. It is provided between the carriers 111.

The plurality of injection nozzles 210 are supplied with ultrapure water from the ultrapure water supply unit 230 connected through the supply line 213.

6 is a view showing a coupling structure of the injection nozzle according to the present invention, the injection nozzle 210 is detachably fitted to the holder 215 to smoothly remove the foreign matter caught in the gap during preventive maintenance (PM). Combined. For example, a plurality of fitting protrusions 210a are formed on the side surface of the injection nozzle 210, and a fitting groove 215a is formed in the holder 215 to correspond to the fitting protrusion 210a.

Then, the operation of the polishing pad foreign matter removal apparatus according to the present invention having the above configuration will be described with reference to FIG. 7.

7 is a plan view showing an operating state of the polishing pad foreign matter removal apparatus according to the present invention.

After the planarization process of the wafer W, foreign substances such as slurry and particles introduced from the outside are generated on the upper surface of the polishing pad 121, and these foreign substances are conditioned to maintain a constant surface roughness of the polishing pad 121 at all times. Even the head 131 is not completely removed and remains.

Accordingly, after the process is completed, the rotating frame 110 is rotated by a predetermined angle so that the spray nozzle 210 is positioned on the polishing pad 121, and the spray nozzle 210 is supplied through the ultrapure water supply unit 230. The ultrapure water received is strongly sprayed onto the surface of the polishing pad 121 to remove foreign substances.

Ultrapure water sprayed through the injection nozzle 210 and the foreign matter removed by it are discharged to the outside through an outlet (not shown) provided at the bottom, and after the removal of the foreign matter as described above is completed CMP process is performed. .

Although the present invention has been shown and described with reference to certain preferred embodiments, the present invention is not limited to the above-described embodiments, and the general knowledge in the technical field to which the present invention pertains falls within the scope of the technical spirit of the present invention. Of course, various changes and modifications are possible.

1 is a plan view showing the overall configuration of a conventional CMP equipment,

Figure 2 is a perspective view showing the appearance of the conventional CMP equipment,

3 is a plan view and a partially enlarged view showing scratches occurring on a wafer after a conventional CMP process;

4 is a plan view showing the configuration of a polishing pad foreign matter removal apparatus of the CMP apparatus according to the present invention;

5 is a schematic side view of a polishing pad foreign material removing apparatus according to the present invention;

Figure 6 is a bottom view showing the coupling structure of the injection nozzle according to the present invention,

7 is a plan view showing an operating state of the polishing pad foreign matter removal apparatus according to the present invention.

<Description of the symbols for the main parts of the drawings>

100: CMP equipment 110: rotating frame

111 wafer carrier 120 base body

121: polishing pad 130: pad conditioner

131: conditioning head 140: slurry feeder

200: polishing pad debris removal device 210: injection nozzle

210a: fitting protrusion 213: supply line

215: holder 215a: fitting groove

Claims (3)

In the polishing pad foreign matter removal device of the chemical mechanical polishing equipment for removing the foreign matter of the polishing pad to polish the wafer adsorbed and fixed to the radial wafer carrier using a slurry, A plurality of injection nozzles for spraying high pressure ultrapure water toward the surface of the pad; And Ultrapure water supply unit for supplying ultrapure water to the injection nozzle; Polishing pad foreign matter removal apparatus of the chemical mechanical polishing equipment comprising a. The method of claim 1, And the spray nozzles are disposed between the rotating wafer carriers. The method according to claim 1 or 2, And the spray nozzle is detachably fitted to the holder.

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