KR20100076496A - Image sensor and manufacturing method of image sensor - Google Patents

Image sensor and manufacturing method of image sensor Download PDF

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Publication number
KR20100076496A
KR20100076496A KR1020080134571A KR20080134571A KR20100076496A KR 20100076496 A KR20100076496 A KR 20100076496A KR 1020080134571 A KR1020080134571 A KR 1020080134571A KR 20080134571 A KR20080134571 A KR 20080134571A KR 20100076496 A KR20100076496 A KR 20100076496A
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South Korea
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layer
conductive
substrate
insulating layer
conductive layer
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KR1020080134571A
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Korean (ko)
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송주일
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주식회사 동부하이텍
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Priority to KR1020080134571A priority Critical patent/KR20100076496A/en
Publication of KR20100076496A publication Critical patent/KR20100076496A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Abstract

An image sensor according to an embodiment includes a first substrate having a readout circuit, an ion implantation region, and an electrical junction region; A first insulating layer including a metal structure connected to the electrical bonding region and formed on the first substrate; A second conductive second conductive layer formed on the first insulating layer, a second conductive first conductive layer formed on the second conductive second conductive layer, and a first conductive layer formed on the second conductive first conductive layer A second substrate on which an image sensing unit including a conductive layer is formed; And a second electrode layer of amorphous oxide formed on the first conductive conductive layer.

According to the embodiment, it is possible to prevent the occurrence of an interface defect between the photodiode and the transparent electrode layer by forming a transparent electrode layer having the same amorphous characteristics as the photodiode and having the same optical characteristics as the crystalline oxide.

Description

Image sensor and manufacturing method of image sensor

Embodiments relate to an image sensor and a method for manufacturing the image sensor.

An image sensor is a semiconductor device that converts an optical image into an electrical signal, and is divided into a charge coupled device (CCD) and a CMOS image sensor (CIS). do.

In the prior art, a photodiode is formed on the substrate by ion implantation. However, as the size of the photodiode gradually decreases for the purpose of increasing the number of pixels without increasing the chip size, the image quality decreases due to the reduction of the area of the light receiver.

In addition, a method of increasing the electron generation rate by increasing the capacitance of the photodiode has been considered, but there is a limit to extending the depletion region of the photodiode to increase the capacitance, and is formed by a back end process of the photodiode. The light opening ratio is lowered by the structure.

One alternative to overcome this is to deposit photodiodes with amorphous Si, or read-out circuitry using wafer-to-wafer bonding such as silicon substrates. And a photodiode on another substrate on the lead-out circuit (referred to as "three-dimensional image sensor", "PD-up CIS") have been tried.

This structure is achieved by sequentially forming n + regions, n− regions, and p + regions in the photodiode region of the other substrate defined as the device isolation film.

According to this structure, the photo-opening ratio can be improved, and as the depletion region (p− region) of the photodiode is expanded, a large value of capacitance can be realized to obtain a high electron generation rate.

In this case, a transparent oxide conductor (TCO) is formed on the photodiode to form an electrode layer, wherein the electrode layer is a crystalline oxide such as indium oxide, indium tin oxide (ITO), tin oxide, zinc oxide (ZnO), or the like. It is formed using.

However, since the crystalline oxide such as ITO is an n-type conductor and the photodiode is amorphous silicon, many interface defects are generated due to the difference in crystallinity between the two layers, and the performance of the image sensor is degraded due to such interface defects. have.

The embodiment relates to a three-dimensional image sensor having a vertical structure. An image sensor and an image in which an interface defect does not occur between a photodiode and a transparent electrode layer by forming a transparent electrode layer having no crystallinity difference with an amorphous silicon substrate on which a photodiode is formed. It provides a method for manufacturing a sensor.

An image sensor according to an embodiment includes a first substrate having a readout circuit, an ion implantation region, and an electrical junction region; A first insulating layer including a metal structure connected to the electrical bonding region and formed on the first substrate; A second conductive second conductive layer formed on the first insulating layer, a second conductive first conductive layer formed on the second conductive second conductive layer, and a first conductive layer formed on the second conductive first conductive layer A second substrate on which an image sensing unit including a conductive layer is formed; And a second electrode layer of amorphous oxide formed on the first conductive conductive layer.

In another embodiment, a method of manufacturing an image sensor includes: forming a readout circuit, an ion implantation region, and an electrical junction region on a first substrate; Forming a first insulating layer including a metal structure connected to the electrical bonding region on the first substrate; A first conductive type conductive layer is formed on the second substrate to a predetermined depth, a second conductive type first conductive layer is formed on the first conductive type conductive layer, and a first conductive layer is formed on the second conductive type first conductive layer. Forming an image sensing unit by forming a second conductive second conductive layer; The second substrate is turned upside down to be combined with the first insulating layer, and the remaining portion of the second substrate under the image sensing unit is removed; And forming a second electrode layer of amorphous oxide on the first conductive conductive layer.

According to the embodiment, the following effects are obtained.

First, an interface defect between the photodiode and the transparent electrode layer may be prevented by forming a transparent electrode layer having the same amorphous property as the photodiode and having the same optical characteristics as the crystalline oxide.

Second, since the interface defect between the photodiode and the transparent electrode layer can be minimized, the sensitivity of the vertical image sensor can be improved.

Third, since the amorphous transparent electrode layer has excellent bonding power with the photodiode and can be deposited at room temperature, it is possible to eliminate the heat treatment process and replace the transparent electrode layer using an expensive crystalline oxide such as ITO. This simplifies the process and reduces production costs.

With reference to the accompanying drawings, it will be described in detail with respect to the image sensor and the manufacturing method of the image sensor according to the embodiment.

Hereinafter, in describing the embodiments, detailed descriptions of related well-known functions or configurations are deemed to unnecessarily obscure the subject matter of the present invention, and thus only the essential components directly related to the technical spirit of the present invention will be referred to. .

In the description of an embodiment according to the present invention, each layer (film), region, pattern or structure may be "on" or "under" the substrate, each layer (film), region, pad or pattern. "On" and "under" include both "directly" or "indirectly" formed through another layer, as described in do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

1 is a side cross-sectional view showing the structure of an image sensor according to an embodiment.

The embodiment has taken the CMOS image sensor as an example, but the present invention is not limited thereto, and it is applicable to an image sensor that requires a photodiode.

The image sensor according to the embodiment is a readout circuitry 110 formed on the first substrate 100, an ion implantation region formed on the first substrate 100 by being electrically connected to the readout circuit 110. 130, an electrical junction region 120, metal structures 210 and 220 formed in electrical connection with the electrical junction region 120, and the metal structures 210 and 220, and on the first substrate 100. The first insulating layer 200 formed on the second substrate and the image sensing device 300 coupled to the insulating layer 200, the second insulating layer 400, and the top metal layer 500. And a third insulating layer 600 and a color filter layer 700.

Hereinafter, the structure of the image sensor according to the embodiment along with the manufacturing method of the image sensor according to the embodiment will be described in detail.

The image sensing unit 210 may be a photodiode, but is not limited thereto, and may be a photogate, a combination of a photodiode and a photogate, and the like.

First, an isolation region 140 is formed on the first substrate 100 to define an active region, and a readout circuit 110 including a transistor is formed in the active region.

Although only one transistor is illustrated in FIG. 1, the readout circuit 110 may include a transfer transistor, a reset transistor, a drive transistor, and a select transistor.

 Thereafter, a floating diffusion region, an ion implantation region 130 including a source / drain region for each transistor, and an electrical junction region 120 connected to the metal structure 210 are formed.

For example, the electrical junction region 120 may be a PN junction, but is not limited thereto. For example, the electrical junction region 120 may include a first conductivity type ion implantation layer formed on a second conductivity type well or a second conductivity type epi layer, and a second conductivity type formed on the first conductivity type ion implantation layer. It may include an ion implantation layer.

Subsequently, the first insulating layer 200 is formed on the first substrate 100, and a metal structure such as a contact plug 210 and a metal wire 220 is formed on the first insulating layer 200. . The first insulating layer may be formed of a plurality of stacked structures, and the metal structure may be formed in order as the insulating layer is stacked.

Therefore, the electrons generated by the image sensing unit 300 are injected into the electrical junction region 120 and the ion implantation of the first substrate 100 via the metal structures 210 and 220 on the insulating layer 200. The region 130 may be transferred to the readout circuit 110 and converted into a voltage.

2 is a side cross-sectional view showing the shape of the second substrate 300a after the crystalline semiconductor layer 305 is formed according to the embodiment.

Next, as shown in FIG. 2, a crystalline semiconductor layer 305 is formed on the second substrate 300a. In an embodiment, the image sensing unit 300 is formed on the crystalline semiconductor layer 305. As a result, the image sensing unit 300 may employ a three-dimensional image sensor positioned above the readout circuit 110 to increase the fill factor and prevent defects in the image sensing unit 300. .

For example, the crystalline semiconductor layer 305 is formed on the second substrate 300a by an epitaxial method. Thereafter, hydrogen ions are implanted at the boundary between the second substrate 300a and the crystalline semiconductor layer 305 to form a hydrogen ion implantation layer 307. The implantation of the hydrogen ions may be performed after ion implantation for forming the image sensing unit 300.

3 is a side cross-sectional view illustrating a form after the image sensing unit 300 is formed on the second substrate according to the embodiment.

Next, a first conductive type conductive layer 320 to be used as ground is formed under the crystalline semiconductor layer 305. For example, a high concentration P-type conductive layer may be formed by ion implanting the entire surface of the second substrate 300a without a mask under the crystalline semiconductor layer 305 without a mask.

Thereafter, a second conductive first conductive layer 330 to be used as a light receiving unit is formed on the first conductive conductive layer 320. For example, a low concentration N-type conductive layer may be formed by implanting ions into the entire surface of the second substrate 300a without a mask on the second conductive first conductive layer 320 without a mask.

Thereafter, the embodiment may further include forming a high concentration second conductive second conductive layer 340 on the second conductive first conductive layer 330. For example, by implanting ions onto the entire surface of the second substrate 300a without a mask on the second conductive type first conductive layer 330 to further form a high concentration N + type conductive layer, it may contribute to ohmic contact.

When the second conductive second conductive layer 340 is formed, a first electrode layer 350 is formed thereon. The first electrode layer 350 may be formed of a metal material such as aluminum, copper, or the like, or may be formed of a transparent electrode layer like the second electrode layer 310 to be described later.

4 is a side cross-sectional view illustrating a form after the second substrate 300a is coupled to the first insulating layer 200 and the second electrode layer 310 is formed according to the embodiment.

Next, as shown in FIG. 4, the second substrate 300a is inverted and bonded to the first insulating layer 200 such that the first electrode layer 350 and the first insulating layer 200 contact each other. Before bonding the first substrate 100 and the second substrate 300a, the bonding may be performed by increasing the surface energy of the surface bonded by activation by plasma.

Thereafter, the second substrate 300a is heat treated to change the hydrogen ion injection layer 307 into a hydrogen gas layer, and on the second conductive type first conductive layer 320 based on the hydrogen gas layer (the The part of the 2nd board | substrate 300a of the upper side (in the state after the 2nd board | substrate 300a inverted) is removed using a blade etc.

By removing a portion of the second substrate 300a, the second conductive first conductive layer 320 is exposed to form a second electrode layer 310 thereon.

The second electrode layer 310 according to the embodiment may include at least one amorphous oxide of AlO x -based aluminum oxide and zinc indium oxide (ZIO).

In addition, the second electrode layer 310 may be formed using an RF sputtering method, a chemical vapor deposition (CVD) method, or a physical vapor deposition (PVD) method.

For example, ZIO is a material doped with In2O3 in ZnO, and compared with ITO. First, it is possible to deposit at room temperature, thus eliminating a heat treatment process for expressing electrical properties. Second, amorphous film is deposited at room temperature. Therefore, it is possible to minimize defects that may occur at the interface between crystalline ITO and amorphous silicon.

As described above, the first electrode layer 350 may also be formed including one or more amorphous oxides of AlO x -based aluminum oxide and zinc indium oxide (ZIO).

1, the second insulating layer 400 is formed on the second electrode layer 310, and the second insulating layer 400 is exposed to expose a portion of the end of the second electrode layer 310. Pattern.

Thereafter, the exposed area of the second insulating layer 400 is buried to form a top metal layer 500 by depositing a metal layer on the second insulating layer 400, and patterning the top metal layer 500. As a result, a portion of the second insulating layer 400 on which the color filter layer 700 is to be formed is exposed.

Next, a third insulating layer 600 is formed on the second insulating layer 400 and the top metal layer 500.

The second insulating layer 400 and the third insulating layer 600 may include a light-transmitting oxide material, and the second insulating layer 400 may insulate the second electrode layer 310. The third insulating layer 600 functions to insulate the top metal layer 500.

When the third insulating layer 600 is formed, the color filter layer 700 is formed on the third insulating layer 600 corresponding to the image sensing unit 300.

Thereafter, the planarization layer and the micro lens process may be further performed.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications other than those described above are possible. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a side cross-sectional view showing the structure of an image sensor according to an embodiment;

Fig. 2 is a side cross-sectional view showing the form of a second substrate after the crystalline semiconductor layer according to the embodiment is formed.

Figure 3 is a side cross-sectional view showing the form after the image sensing unit is formed on the second substrate according to the embodiment.

4 is a side cross-sectional view showing a form after the second substrate is bonded to the first insulating layer and the second electrode layer is formed according to the embodiment.

Claims (14)

Forming a lead-out circuit, an ion implantation region, and an electrical junction region on the first substrate; Forming a first insulating layer including a metal structure connected to the electrical bonding region on the first substrate; A first conductive type conductive layer is formed on the second substrate to a predetermined depth, a second conductive type first conductive layer is formed on the first conductive type conductive layer, and a first conductive layer is formed on the second conductive type first conductive layer. Forming an image sensing unit by forming a second conductive second conductive layer; The second substrate is turned upside down to be combined with the first insulating layer, and the remaining portion of the second substrate under the image sensing unit is removed; And And forming a second electrode layer of amorphous oxide on the first conductive conductive layer. The method of claim 1, wherein the readout circuit And at least one of a transfer transistor, a reset transistor, a drive transistor, and a select transistor. The method of claim 1, And the ion implantation region comprises at least one of a floating diffusion region and a source / drain region of a rigid lead-out circuit. The method of claim 1, wherein the second electrode layer AlO x series aluminum oxide, ZIO (Zinc Indium Oxide) of at least one amorphous oxide comprising a method of manufacturing an image sensor comprising a. The method of claim 1, wherein the second conductive second conductive layer is formed Forming a crystalline semiconductor layer on the second substrate; Forming a hydrogen ion implantation layer at a boundary between the second substrate and the crystalline semiconductor layer; A first conductive conductive layer is formed below the crystalline semiconductor layer, a second conductive first conductive layer is formed above the first conductive conductive layer, and a second conductive conductive layer is formed above the second conductive first conductive layer. A method of manufacturing an image sensor comprising the step of forming a conductive second conductive layer. The method of claim 5, wherein the remaining part of the second substrate is removed. The second substrate is turned upside down and joined with the first insulating layer; Changing the hydrogen ion implantation layer into a hydrogen gas layer; And And removing the remaining part of the second substrate under the image sensing unit based on the hydrogen ion implantation layer. The method of claim 1, wherein the second conductive second conductive layer is formed And forming a first electrode layer on the second conductive second conductive layer. The method of claim 7, wherein the first electrode layer AlO x series aluminum oxide, ZIO (Zinc Indium Oxide) of at least one amorphous oxide comprising a method of manufacturing an image sensor comprising a. The method of claim 1, Forming a second insulating layer on the second electrode layer, and patterning the second insulating layer to expose an end portion of the second electrode layer; Forming a top metal layer on the second insulating layer except for the portion of the second insulating layer where a color filter layer is to be formed; Forming a third insulating layer on the second insulating layer and the top metal layer; And forming the color filter layer on the third insulating layer corresponding to the image sensing unit. A first substrate having a lead-out circuit, an ion implantation region, and an electrical junction region; A first insulating layer including a metal structure connected to the electrical bonding region and formed on the first substrate; A second conductive second conductive layer formed on the first insulating layer, a second conductive first conductive layer formed on the second conductive second conductive layer, and a first conductive layer formed on the second conductive first conductive layer A second substrate on which an image sensing unit including a conductive layer is formed; And And a second electrode layer of amorphous oxide formed on the first conductive type conductive layer. The method of claim 10, wherein the second electrode layer An AlO x- based aluminum oxide, ZIO (Zinc Indium Oxide) of the image sensor comprising at least one amorphous oxide. The method of claim 10, And a first electrode layer formed on the second conductive type second conductive layer. The method of claim 12, wherein the first electrode layer is An AlO x- based aluminum oxide, ZIO (Zinc Indium Oxide) of the image sensor comprising at least one amorphous oxide. The method of claim 10, A second insulating layer formed on the second electrode layer and patterned to expose an end of the second electrode layer; A top metal layer formed on the second insulating layer except for the portion of the second insulating layer where a color filter layer is to be formed; A third insulating layer formed on the second insulating layer and the top metal layer; And And a color filter layer formed on the third insulating layer corresponding to the image sensing unit.
KR1020080134571A 2008-12-26 2008-12-26 Image sensor and manufacturing method of image sensor KR20100076496A (en)

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