KR20100074490A - Apparatus for treating perfluorocompounds - Google Patents

Apparatus for treating perfluorocompounds Download PDF

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KR20100074490A
KR20100074490A KR1020080132947A KR20080132947A KR20100074490A KR 20100074490 A KR20100074490 A KR 20100074490A KR 1020080132947 A KR1020080132947 A KR 1020080132947A KR 20080132947 A KR20080132947 A KR 20080132947A KR 20100074490 A KR20100074490 A KR 20100074490A
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gas
unit
perfluorinated compound
adsorbent
processing apparatus
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장석경
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주식회사 동부하이텍
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/68—Halogens or halogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/0027—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with additional separating or treating functions
    • B01D46/0036—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with additional separating or treating functions by adsorption or absorption
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/06—Spray cleaning
    • B01D47/063—Spray cleaning with two or more jets impinging against each other
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/12—Washers with plural different washing sections
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D47/00—Separating dispersed particles from gases, air or vapours by liquid as separating agent
    • B01D47/14—Packed scrubbers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/005—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by heat treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/77—Liquid phase processes
    • B01D53/78—Liquid phase processes with gas-liquid contact
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/10—Inorganic adsorbents
    • B01D2253/112—Metals or metal compounds not provided for in B01D2253/104 or B01D2253/106
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2253/00—Adsorbents used in seperation treatment of gases and vapours
    • B01D2253/30—Physical properties of adsorbents
    • B01D2253/34—Specific shapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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Abstract

PURPOSE: An apparatus for processing a perfluorinated compound is provided to perfectly process CF4 gas which is produced in an etching process during a manufacturing process of a semiconductor production process into harmless gas. CONSTITUTION: An apparatus for processing a perfluorinated compound includes the following: a heat treatment portion(100) treating CF4 gas into harmless gas; a filter processing portion preventing recombination of the CF4 gas at a room temperature; and an absorbent treatment portion(300) processing HF gas which is produced after reaction of CF4 gas. The heat treatment portion includes a combustion chamber portion(110), a circulation tank(120), and a scrubbing treatment portion(130).

Description

퍼플루오르화 화합물 처리 장치 {APPARATUS FOR TREATING PERFLUOROCOMPOUNDS}Perfluorinated Compound Treatment Apparatus {APPARATUS FOR TREATING PERFLUOROCOMPOUNDS}

본 발명은 퍼플루오르화 화합물 처리 장치에 관한 것으로, 보다 상세하게는 반도체 생산 공정중 에칭 공정에 사용되는 PFCs사용 가스들 중에 특히CF4 Gas를 무해한 가스로 처리하기에 적합한 퍼플루오르화 화합물 처리 장치에 관한 것이다. FIELD OF THE INVENTION The present invention relates to a perfluorinated compound processing apparatus, and more particularly to a perfluorinated compound processing apparatus suitable for treating CF4 gas with a harmless gas among PFCs using gases used in an etching process in a semiconductor production process. will be.

일반적으로 반도체 공정에서 퍼플루오르화 화합물(PFCs;Perfluorocompounds)은 화학기상증착 공정, 에칭 공정, 챔버 클리닝 공정 등에서 많이 사용되고 있다. 예를 들어, 반도체 에칭 공정에는 CF4, C2F6 가스가 주로 사용되고 있다. 이러한 PFC 가스는 대부분 비활성기체로 매우 안정적이며 대기중에서의 체류시간이 매우 길고 지구에서 복사되는 적외선을 흡수하기 때문에 매우 높은 GWP(Global Worming Potential)을 가지고 있다. 이와 같은 PFC의 특성에도 불구하고 반도체 산업에서 PFCs의 사용이 지속적으로 증가하고 있다. In general, perfluorocompounds (PFCs) are widely used in chemical vapor deposition, etching, and chamber cleaning processes in semiconductor processes. For example, CF4 and C2F6 gas are mainly used for the semiconductor etching process. Most of these PFC gases are inert gases, which are very stable, have a long residence time in the atmosphere, and absorb infrared radiation from the earth, and thus have very high global warming potential (GWP). Despite these characteristics, the use of PFCs in the semiconductor industry continues to increase.

특히 CF4 Gas는 PFCs Gas중 가장 처리하기가 어려운 난분해성 가스로서, 상온에서 재결합 및 HF 가스에 부생성물을 많이 생성하는 문제점이 있다. 종래에는 대형화된 흡착탑을 이용하여 흡착과 탈착을 통해 저농도의 CF4 가스를 고순도의 CF4 가스로 전환하여 재생을 통한 재활용이 가능한 흡착 설비 및 방법이 제공되고 있다. In particular, CF4 gas is a hardly decomposable gas among PFCs gas, and has a problem of generating a lot of by-products in recombination and HF gas at room temperature. Conventionally, an adsorption apparatus and method for converting low concentration CF4 gas into high purity CF4 gas through adsorption and desorption using a large sized adsorption tower and recycling through recycling are provided.

그러나 이러한 종래 기술에 문제점은 첫째, CF4 Gas 가스 재생 및 회수율이 매우 낮아 대형화 장치 투자비 효과 대비 설치비 및 유지비가 상대적으로 매우 크다. 둘째, 대형화 설비를 필요로 하여 설비의 설치 공간 면적이 크다. 셋째, CF4 가스에 재결합 및 부식성이 강한 HF 가스가 대량으로 대기중으로 배출되어 환경오염을 유발하는 것 등이다.However, the problem with the prior art is first, the installation and maintenance costs are relatively high compared to the effect of the large-scale equipment investment costs because the CF4 gas gas recovery and recovery rate is very low. Second, the installation space of the facility is large because a large-scale facility is required. Third, the recombination of CF4 gas and the highly corrosive HF gas are discharged into the atmosphere in large quantities, causing environmental pollution.

본 발명의 목적은 CF4 Gas 가스를 처리 효율을 향상시키려는 데 있다. An object of the present invention is to improve the treatment efficiency of CF4 gas gas.

본 발명의 다른 목적은 설비를 소형화하여 설비의 설치 공간이 차지하는 면적으로 최소화함으로써 설비 비용을 절감하려는 데 있다.Another object of the present invention is to reduce the installation cost by miniaturizing the installation to minimize the area occupied by the installation space of the installation.

본 발명의 또 다른 목적은 CF4 가스에 재결합 및 부식성이 강한 HF 가스를 제거하여 환경오염을 방지하려는 데 있다.Still another object of the present invention is to prevent environmental pollution by recombining CF4 gas and removing highly corrosive HF gas.

상기의 목적을 달성하기 위한 본 발명은 유입되는 유해 가스중 CF4 가스를 무해한 가스로 처리하는 열 처리부와; 상기 열 처리부에서 처리된 이후에 생성되는 CF4 가스가 상온에서 재결합되는 것을 방지하기 위한 필터 처리부와; 상기 필터 처리부를 통과하여 CF4 가스가 반응후 다량 발생되는 HF 가스를 처리하는 흡착제 처리부;를 포함한다.The present invention for achieving the above object is a heat treatment unit for treating the inlet harmful gas CF4 gas into a harmless gas; A filter processing unit for preventing recombination of CF4 gas generated after the heat treatment unit at room temperature; It includes; adsorbent processing unit for passing through the filter processing unit to process a large amount of HF gas generated after the reaction of CF4 gas.

상기 열 처리부는 CF4가스 연료를 이용하여 직접 산화 반응이 일어나는 연소 챔버부와, 상기 연소 챔버부에서 분해된 가스에 의해 생성되는 PFCs 수용성 가스와 입자상 물질을 처리하는 순환 탱크와, 옥상용 처리 스크러버로 유해 가스가 배출되기 전에 물을 살포하여 처리하는 스크러빙 처리부를 포함한다.The heat treatment unit comprises a combustion chamber unit in which a direct oxidation reaction occurs using CF 4 gas fuel, a circulation tank for treating PFCs water-soluble gas and particulate matter generated by the gas decomposed in the combustion chamber unit, and a roof treatment scrubber. And a scrubbing treatment unit for spraying and treating water before the harmful gas is discharged.

상기 연소 챔버부는 챔버 바디의 상단부 일측에 가스유입구가 형성되고, 상기 챔버 바디의 상단부 중앙에는 CF4가스를 고온 열분해 처리하기 위한 불꽃 발생부가 설치된다.The combustion chamber part has a gas inlet formed at one side of the upper end of the chamber body, and a flame generator for high temperature pyrolysis treatment of CF4 gas is installed at the center of the upper end of the chamber body.

상기 스크러빙 처리부는 원통형 바디의 내부에 다단으로 설치된 분사노즐을 포함한다.The scrubbing treatment unit includes a spray nozzle installed in multiple stages inside the cylindrical body.

상기 필터 처리부는 상단은 가스유입구로 형성되고 하단은 가스유출구가 형성된 원통형 바디의 중앙에 CF4 가스를 제거 할 수 있는 이온교환셀과, 음이온 및 양이온 교환 수지가 충진된 카트리지를 포함한다.The filter treatment part includes an ion exchange cell capable of removing CF4 gas in the center of a cylindrical body having an upper end formed with a gas inlet and a gas outlet formed therein, and a cartridge filled with anion and cation exchange resin.

상기 흡착제 처리부는 원통형 바디의 일단에 가스유입구가 형성되고 타단에 가스배출구가 형성되며, 상기 원통형 바디의 내부에 HF 가스를 제거하는 CF4 흡착제가 충진된다.The adsorbent treatment unit has a gas inlet formed at one end of the cylindrical body and a gas outlet formed at the other end thereof, and filled with a CF4 adsorbent for removing HF gas inside the cylindrical body.

상기 CF4흡착제는 스트론튬 화합물인 Sr(OH)2.18 H2O, Sr(OH)2.14H2O 활성 성분 30g을 각각 유기결합제 3wt%, 7wt% 로 선정되어진 총 10가지 흡착제와 상온에서 교반기를 사용하여 초순수 증류수 15g를 혼합되고, 상기 혼합물을 약 110℃의 온도로 유지되는 건조로에서 4시간 동안 건조시킨 후에 대기 노출후 상온에서 24시간 동안 자연숙성시켜 건조된 혼합물을 펠렛 형태 등으로 압출 성형하여 제조된다.The CF4 sorbent strontium compound Sr (OH) 2. 18 H 2 O, Sr (OH) 2 .14H 2 O and the active component 30g each 3wt% organic binder, a stirrer a total of 10 kinds of adsorbent and the temperature been selected as 7wt% 15 g of ultrapure distilled water is mixed, and the mixture is dried in a drying furnace maintained at a temperature of about 110 ° C. for 4 hours, and then aged at room temperature for 24 hours after exposure to air, thereby extruding the dried mixture into pellets or the like. It is manufactured by.

이상과 같은 본 발명은 반도체 생산 공정중 에칭 공정에서 발생하는 CF4 가스를 무해한 가스로 완벽하게 처리하는 효과가 있다.The present invention as described above has the effect of completely treating the CF4 gas generated in the etching process of the semiconductor production process to a harmless gas.

즉, 본 발명은 CF4 가스에 대한 높은 처리 효율을 얻을 수있고, CF4가스가 상온에서 재결합되는 것을 방지하거나 최소화할 수 있으며, CF4가스 부생성물인 HF가스를 무해한 가스로 처리 함으로써 펌프 후단 및 메인 덕트 배관의 부식과 인체 에 유해가스를 최소화하고, 설비의 소형화로 인한 설치면적의 최소화가 가능하며, 온실 가스 배출량 감소 및 환경 무역 규제 대비책 강화에 효과를 나타낸다.That is, the present invention can obtain a high processing efficiency for CF4 gas, can prevent or minimize the recombination of CF4 gas at room temperature, and by treating the CF4 gas by-product HF gas with a harmless gas, the back end of the pump and the main duct It minimizes the corrosiveness of pipes and harmful gases to the human body, minimizes the installation area due to the miniaturization of facilities, and has the effect of reducing greenhouse gas emissions and strengthening measures against environmental trade regulations.

이하, 상기한 바와 같은 본 발명의 바람직한 실시예를 첨부도면에 의거하여 보다 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention as described above will be described in more detail with reference to the accompanying drawings.

도 1은 본 발명의 일 실시예에 따른 플루오르화 화합물 처리 장치의 구성도이고, 도 2는 본 발명에 따른 필터 처리부의 구성도이며, 도 3은 본 발명에 따른 흡착제 처리부의 구성도이다.1 is a block diagram of a fluorinated compound treatment apparatus according to an embodiment of the present invention, Figure 2 is a block diagram of a filter treatment unit according to the present invention, Figure 3 is a block diagram of the adsorbent treatment unit according to the present invention.

도 1 내지 도 3을 참조하면, 본 발명의 일 실시예에 따른 플루오르화 화합물 처리 장치(1)는 PFCs사용 가스들 중에서 CF4 Gas를 무해한 가스로 처리하는 열 처리부(100)와, 상기 열 처리부(100)에서 처리된 이후에 생성되는 CF4 가스가 상온에서 재결합되는 것을 방지하기 위한 필터 처리부(200)와, CF4 가스 반응후 다량 발생되는 HF 가스를 처리하는 흡착제 처리부(300)를 포함한다.1 to 3, the fluorinated compound treating apparatus 1 according to an embodiment of the present invention includes a heat treatment unit 100 for treating CF4 gas as a harmless gas among PFCs using gases, and the heat treatment unit ( It includes a filter processing unit 200 for preventing the CF4 gas generated after the treatment in 100) to be recombined at room temperature, and the adsorbent processing unit 300 for processing a large amount of HF gas generated after the CF4 gas reaction.

상기 열 처리부(100)는 반도체 생산 공정중 에칭 공정에 사용되는 PFCs사용 가스들 중에서 CF4 Gas를 무해한 가스로 처리하게 된다. The heat treatment unit 100 treats CF4 gas as a harmless gas among PFCs used gases used in an etching process in a semiconductor production process.

상기 열 처리부(100)는 CF4가스 연료를 이용하여 직접 산화 반응이 일어나는 연소 챔버부(110), 상기 연소 챔버부(110)에서 분해된 가스에 의해 생성되는 PFCs Gas수용성 가스와 입자상 물질을 처리하는 순환 탱크(120), 옥상용 처리 스크러버로 유해 가스가 배출되기 전에 물을 살포하여 처리하는 스크러빙(Scrubbing)처리부(130)를 포함한다.The heat treatment unit 100 processes the PFCs Gas water-soluble gas and particulate matter generated by the gas decomposed in the combustion chamber unit 110 and the combustion chamber unit 110 in which a direct oxidation reaction occurs using CF 4 gas fuel. Circulation tank 120, a scrubbing treatment unit 130 for spraying and treating the water before the harmful gas is discharged to the roof treatment scrubber (130).

상기 연소 챔버부(110)는 챔버 바디(111)의 상단부 일측에 직경 40mm의 가스유입구(112)가 형성되고, 상기 챔버 바디(111)의 상단부 중앙에는 CF4 가스를 고온 열분해 처리하기 위한 불꽃 발생부(113)가 설치된다. 상기 챔버 바디(111)는 두께8mm이고 직경180mm, 높이 400mm인 원통체로 형성된다. 이러한 챔버 바디(111)의 내주면에는 다공성 세라믹의 내부식성을 향상시키기 위하여 테프론이 코팅된다. The combustion chamber 110 has a gas inlet 112 having a diameter of 40 mm at one side of the upper end of the chamber body 111, and a flame generator for high-temperature pyrolysis treatment of CF4 gas at the center of the upper end of the chamber body 111. 113 is installed. The chamber body 111 is formed of a cylindrical body having a thickness of 8 mm, a diameter of 180 mm, and a height of 400 mm. Teflon is coated on the inner circumferential surface of the chamber body 111 to improve corrosion resistance of the porous ceramic.

상기 순환 탱크(120)는 상기 연소 챔버부(110)의 하단에서 상기 챔버 바디(111)와 연통되게 설치된다. 상기 순환 탱크(120)는 분해된 가스에 의해 생성되는 PFCs Gas수용성 가스와 입자상 물질을 처리하는 물을 저장하며, 저장된 물이 순환되어 상시적으로 물의 유입과 배출이 가능하도록 구성된다. 즉, 물을 유입하기 위한 물공급 펌프(121)와, 물을 배출하기 위한 배수 펌프(122) 등이 연결설치된다. The circulation tank 120 is installed in communication with the chamber body 111 at the lower end of the combustion chamber 110. The circulation tank 120 stores water for treating PFCs Gas-soluble gas and particulate matter generated by the decomposed gas, and is configured to allow the inflow and discharge of water at all times by circulating the stored water. That is, a water supply pump 121 for introducing water and a drain pump 122 for discharging water are connected to each other.

상기 스크러빙 처리부(130)는 상기 순환 탱크(120)의 챔버 바디(111)의 타단에 연통가능하게 설치된다. 상기 스크러빙 처리부(130)는 원통형 바디(131)의 내부 다단으로 분사노즐(132,133,134)이 설치된다. 상기 분사노즐(132,133,134)은 유해 가스가 배출 되기 전에 상승되는 배출 가스를 향하여 물을 미세한 상태로 살포하게 된다. The scrubbing processing unit 130 is installed in communication with the other end of the chamber body 111 of the circulation tank 120. The scrubbing processing unit 130 is provided with injection nozzles (132, 133, 134) in the inner multi-stage of the cylindrical body (131). The injection nozzles 132, 133, 134 spray water in a fine state toward the discharge gas which is raised before the harmful gas is discharged.

상기 필터 처리부(200)는 상기 열 처리부(100)에서 처리된 이후에 생성되는 CF4 가스가 상온에서 재결합되는 것을 방지하도록 한다.The filter processing unit 200 may prevent the CF4 gas generated after being processed by the heat processing unit 100 from being recombined at room temperature.

상기 필터 처리부(200)는 상단은 가스유입구(220)로 형성되고 하단은 가스유출구(230)가 형성된 원통형 바디(210)의 중앙에 CF4 가스를 제거 할 수 있는 이온교환셀과, 음이온 및 양이온 교환 수지가 대략 600×300×40mm 크기를 갖는 카트리 지(240)의 형태로 형성된다. 이러한 이온 교환 수지의 성분은 합성 제올라이트인 것이 바람직하나, 이에 한정할 필요는 없다.The filter processing unit 200 is an ion exchange cell capable of removing CF4 gas in the center of the cylindrical body 210, the upper end is formed of the gas inlet 220 and the gas outlet 230 is formed, the anion and cation exchange The resin is formed in the form of a cartridge 240 having a size of approximately 600 × 300 × 40 mm. The component of such an ion exchange resin is preferably a synthetic zeolite, but is not limited thereto.

상기 흡착제 처리부(300)는 CF4 가스 반응후 다량 발생되는 HF 가스를 처리하게 된다.The adsorbent treatment unit 300 is to process a large amount of HF gas generated after the CF4 gas reaction.

상기 흡착제 처리부(300)는 원통형 바디(310)의 일단에 가스유입구(320)가 형성되고 타단에 가스배출구(330)가 형성되며, 원통형 바디(310)의 내부에 HF 가스를 제거하는 CF4 흡착제(340)가 충진된다. 상기 CF4 흡착제(340)의 상하단에는 타공판(350)이 구비된다.The adsorbent treatment unit 300 is a gas inlet 320 is formed at one end of the cylindrical body 310 and the gas outlet 330 is formed at the other end, CF4 adsorbent for removing the HF gas in the cylindrical body 310 ( 340 is filled. Perforated plate 350 is provided at the upper and lower ends of the CF4 adsorbent 340.

상기 원통형 바디(310)는 두께5m의 스테인리스 재질로 형성되고, 직경이 150mm, 높이가 300mm로 형성된다.The cylindrical body 310 is formed of a stainless steel material having a thickness of 5m, 150mm in diameter, 300mm in height.

상기 CF4흡착제(340)는 스트론튬 화합물인 Sr(OH)2.18 H2O, Sr(OH)2.14H2O 활성 성분 30g을 각각 유기결합제 3wt%, 7wt% 로 선정되어진 총 10가지 흡착제와 상온에서 교반기를 사용하여 초순수 증류수 15g를 혼합한다. 그 다음 상기 혼합물을 약 110℃의 온도로 유지되는 건조로에서 4시간 동안 건조시킨 후에 대기 노출후 상온에서 24시간 동안 자연숙성시켜 건조된 혼합물을 펠렛(pellet)형태 등으로 압출 성형하여 제조된다.The CF4 adsorbent 340 and total 10 kinds of adsorbent been selected as the Sr (OH) 2. 18 H 2 O, Sr (OH) 2 .14H 2 O Active ingredient 30g each 3wt% organic binder strontium compound, 7wt% Mix 15 g of ultrapure distilled water using a stirrer at room temperature. The mixture is then dried in a drying furnace maintained at a temperature of about 110 ° C. for 4 hours and then naturally aged at room temperature for 24 hours after exposure to air to prepare the dried mixture by extrusion molding into pellets or the like.

상기 본 발명에 따른 퍼플루오르화 화합물 처리 장치(1)는 전체 사이즈가 1000mm(W) X 900mm(B) X 1850mm(H)의 사이즈로 최적화된 구성을 갖는다.The perfluorinated compound processing apparatus 1 according to the present invention has a configuration in which the overall size is optimized to a size of 1000 mm (W) X 900 mm (B) X 1850 mm (H).

이와 같은 구성에 의한 본 발명에 따른 퍼플루오르화 화합물 처리 장치(1)의 작용을 설명한다.The effect | action of the perfluorinated compound processing apparatus 1 which concerns on this invention by such a structure is demonstrated.

가스유입구(112)를 통해 유입된 CF4 가스는 열 처리부(100)를 통과하면서 CF4 가스가 무해한 가스로 처리된다. 즉, 연소 챔버부(110)의 불꽃 발생부(113)에 의해 CF4가스가 고온으로 열분해 처리된다. 그리고 분해된 가스는 생성되는 PFCs Gas수용성 가스와 입자상 물질이 순환 탱크(120)을 통과하면서 흡착된다. 마지막으로 스크러빙 처리부(130)를 통과하면서 다단의 분사노즐(132)(133)(134)을 통해 살포되는 물에 의해 옥상용 처리 스크러버로 유해 가스가 배출되기 전에 순환탱크(120)를 통과하면서 흡착되지 않은 나머지 PFCs Gas수용성 가스와 입자상 물질이 흡착되어 다시 순환탱크(120)로 낙하된다. CF4 gas introduced through the gas inlet 112 is passed through the heat treatment unit 100 and the CF4 gas is treated as a harmless gas. That is, the CF 4 gas is pyrolyzed at high temperature by the flame generator 113 of the combustion chamber 110. The decomposed gas is adsorbed while the generated PFCs Gas-soluble gas and particulate matter pass through the circulation tank 120. Finally, while passing through the scrubbing treatment unit 130 and adsorbed while passing through the circulation tank 120 before the harmful gas is discharged to the roof treatment scrubber by the water sprayed through the multi-stage injection nozzles 132, 133, 134. The remaining PFCs gas-soluble gas and particulate matter which are not present are adsorbed and fall back to the circulation tank 120.

이처럼 열 처리부(100)를 통과한 유해 가스는 필터 처리부(200)를 통과하면서 생성되는 CF4 가스가 상온에서 재결합되는 것을 방지하게 된다.As such, the harmful gas passing through the heat treatment unit 100 prevents the CF4 gas generated while passing through the filter treatment unit 200 from being recombined at room temperature.

그리고 마지막으로 흡착제 처리부(300)를 통과하면서 CF4 흡착제(340)에 의해 CF4 가스가 반응후 다량 발생되는 HF 가스를 처리한 후에 무해한 가스를 배출하게 된다.And finally, while passing through the adsorbent treatment unit 300 by the CF4 adsorbent 340 to process a large amount of HF gas generated after the reaction of the CF4 gas discharges a harmless gas.

도 1은 본 발명의 일 실시예에 따른 플루오르화 화합물 처리 장치의 구성도이고, 1 is a block diagram of a fluorinated compound treating apparatus according to an embodiment of the present invention,

도 2는 본 발명에 따른 필터 처리부의 구성도이며, 2 is a block diagram of a filter processing unit according to the present invention,

도 3은 본 발명에 따른 흡착제 처리부의 구성도이다.3 is a block diagram of an adsorbent treatment unit according to the present invention.

< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>

1 ; 플루오로화 화합물 처리 장치One ; Fluorinated Compound Processing Equipment

100 ; 열 처리부100; Heat treatment

200 ; 필터 처리부200; Filter processing unit

300 ; 흡착제 처리부300; Adsorbent Treatment

Claims (7)

유입되는 유해 가스중 CF4 가스를 무해한 가스로 처리하는 열 처리부와;A heat treatment part for treating CF4 gas in the harmful gas introduced therein as a harmless gas; 상기 열 처리부에서 처리된 이후에 생성되는 CF4 가스가 상온에서 재결합되는 것을 방지하기 위한 필터 처리부와;A filter processing unit for preventing recombination of CF4 gas generated after the heat treatment unit at room temperature; 상기 필터 처리부를 통과하여 CF4 가스가 반응후 다량 발생되는 HF 가스를 처리하는 흡착제 처리부;를 포함하는 퍼플루오르화 화합물 처리 장치.Perfluorinated compound processing apparatus comprising; adsorbent processing unit for processing a large amount of HF gas generated after the CF4 gas reaction after the filter processing unit. 제 1 항에 있어서,The method of claim 1, 상기 열 처리부는 CF4가스 연료를 이용하여 직접 산화 반응이 일어나는 연소 챔버부와, 상기 연소 챔버부에서 분해된 가스에 의해 생성되는 PFCs 수용성 가스와 입자상 물질을 처리하는 순환 탱크와, 옥상용 처리 스크러버로 유해 가스가 배출되기 전에 물을 살포하여 처리하는 스크러빙 처리부를 포함하는 퍼플루오르화 화합물 처리 장치.The heat treatment unit comprises a combustion chamber unit in which a direct oxidation reaction occurs using CF 4 gas fuel, a circulation tank for treating PFCs water-soluble gas and particulate matter generated by the gas decomposed in the combustion chamber unit, and a roof treatment scrubber. A perfluorinated compound processing apparatus comprising a scrubbing treatment unit for spraying water treatment before the harmful gas is discharged. 제 2 항에 있어서,The method of claim 2, 상기 연소 챔버부는 챔버 바디의 상단부 일측에 가스유입구가 형성되고, 상기 챔버 바디의 상단부 중앙에는 CF4가스를 고온 열분해 처리하기 위한 불꽃 발생부가 설치된 퍼플루오르화 화합물 처리 장치.The combustion chamber part is a gas inlet is formed on one side of the upper end of the chamber body, the center of the upper end of the chamber body is installed a flame generating unit for pyrolyzing CF4 gas at a high temperature perfluorinated compound processing apparatus. 제 2 항에 있어서,The method of claim 2, 상기 스크러빙 처리부는 원통형 바디의 내부에 다단으로 설치된 분사노즐을 포함하는 퍼플루오르화 화합물 처리 장치.The scrubbing treatment unit is a perfluorinated compound processing apparatus comprising a spray nozzle installed in multiple stages inside the cylindrical body. 제 1 항에 있어서,The method of claim 1, 상기 필터 처리부는 상단은 가스유입구로 형성되고 하단은 가스유출구가 형성된 원통형 바디의 중앙에 CF4 가스를 제거 할 수 있는 이온교환셀과, 음이온 및 양이온 교환 수지가 충진된 카트리지를 포함하는 퍼플루오르화 화합물 처리 장치.The filter treatment part is formed of a gas inlet at the upper end and a perfluorinated compound including an ion exchange cell capable of removing CF4 gas in the center of the cylindrical body in which the gas outlet is formed, and an anion and cation exchange resin-filled cartridge. Processing unit. 제 1 항에 있어서,The method of claim 1, 상기 흡착제 처리부는 원통형 바디의 일단에 가스유입구가 형성되고 타단에 가스배출구가 형성되며, 상기 원통형 바디의 내부에 HF 가스를 제거하는 CF4 흡착제가 충진된 퍼플루오르화 화합물 처리 장치.The adsorbent treatment unit is a perfluorinated compound processing apparatus is filled with a CF4 adsorbent to form a gas inlet at one end of the cylindrical body and a gas outlet at the other end, to remove the HF gas inside the cylindrical body. 제 6 항에 있어서,The method of claim 6, 상기 CF4흡착제는 스트론튬 화합물인 Sr(OH)2.18 H2O, Sr(OH)2.14H2O 활성 성분 30g을 각각 유기결합제 3wt%, 7wt% 로 선정되어진 총 10가지 흡착제와 상온에서 교반기를 사용하여 초순수 증류수 15g를 혼합되고, 상기 혼합물을 약 110℃의 온도로 유지되는 건조로에서 4시간 동안 건조시킨 후에 대기 노출후 상온에서 24시간 동안 자연숙성시켜 건조된 혼합물을 펠렛 형태 등으로 압출 성형하여 제조된 퍼플루오르화 화합물 처리 장치.The CF4 sorbent strontium compound Sr (OH) 2. 18 H 2 O, Sr (OH) 2 .14H 2 O and the active component 30g each 3wt% organic binder, a stirrer a total of 10 kinds of adsorbent and the temperature been selected as 7wt% 15 g of ultrapure distilled water is mixed, and the mixture is dried in a drying furnace maintained at a temperature of about 110 ° C. for 4 hours, and then aged at room temperature for 24 hours after exposure to air, thereby extruding the dried mixture into pellets or the like. Perfluorinated compound processing apparatus prepared by.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220159764A (en) * 2021-05-26 2022-12-05 주식회사 글로벌스탠다드테크놀로지 Variable driving system of hybrid scrubber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220159764A (en) * 2021-05-26 2022-12-05 주식회사 글로벌스탠다드테크놀로지 Variable driving system of hybrid scrubber

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