KR20100071336A - Piezo-resistive pressure sensor using shear stress and method for manufacturing the same - Google Patents

Piezo-resistive pressure sensor using shear stress and method for manufacturing the same Download PDF

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KR20100071336A
KR20100071336A KR1020080130015A KR20080130015A KR20100071336A KR 20100071336 A KR20100071336 A KR 20100071336A KR 1020080130015 A KR1020080130015 A KR 1020080130015A KR 20080130015 A KR20080130015 A KR 20080130015A KR 20100071336 A KR20100071336 A KR 20100071336A
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diaphragm
pressure sensor
piezo
shear stress
manufacturing
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KR101515828B1 (en
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김흥락
이경일
서호철
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재단법인 포항산업과학연구원
세종공업 주식회사
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE: A piezoresistive pressure sensor using shearing stress and a manufacturing method thereof are provided to obtain a high output voltage by connecting a plurality of piezoregistors serially. CONSTITUTION: A piezoresistive pressure sensor using shearing stress comprises a diaphragm(200) and a plurality of piezoregistors(100). The diaphragms are formed on a substrate. The piezoregistors are formed on the diaphragm. The piezoregistors are serially connected. The diaphragm is formed in a quadrangle shpae. The piezoregistors are formed at the center of each side of the diaphragm one by one.

Description

전단응력을 이용한 압저항형 압력센서 및 그 제조방법{PIEZO-RESISTIVE PRESSURE SENSOR USING SHEAR STRESS AND METHOD FOR MANUFACTURING THE SAME}Piezoresistive pressure sensor using shear stress and its manufacturing method {PIEZO-RESISTIVE PRESSURE SENSOR USING SHEAR STRESS AND METHOD FOR MANUFACTURING THE SAME}

본 발명은 다이어프램 상에 형성되어 있는 Piezo 저항이 전단응력에 의해 저항값이 변화하게 되는 것을 이용하는 압저항형 압력센서 및 그 제조방법에 관한 것이다. The present invention relates to a piezoresistive pressure sensor using a piezo resistor formed on a diaphragm such that the resistance value changes due to shear stress, and a manufacturing method thereof.

압저항형 압력센서는 압전효과를 이용한 센서나 기계식센서보다 저가격, 고감도, 고신뢰성 등의 장점으로 자동차, 가전 및 공장 자동화 시장 등에 급속히 보급되는 추세이다. 또한, 앞으로는 미세 가공기술의 향상에 따라 소형화, 고집적화, 인텔리전트(intelligent)화 등으로 더욱 발전 가능성이 있는 센서이다.Piezoresistive pressure sensors are rapidly spreading to automobiles, home appliances, and factory automation markets due to advantages such as low cost, high sensitivity, and high reliability over piezoelectric sensors and mechanical sensors. In addition, with the improvement of micromachining technology, the sensor is likely to be further developed due to miniaturization, high integration, and intelligent.

종래 압저항형 압력센서는 4개의 Piezo 저항이 휘트스톤 브릿지 회로망을 구성하도록 제작되었으며, 상기 브릿지들의 저항값이 일치할 때 옵셋이 발생하지 않고 비교적 큰 출력을 얻을 수 있었다. 그러나 이 저항들은 불순물 농도의 불균일성에 따른 저항값의 불일치와 압저항계수의 온도 의존성 및 실리콘 자체의 온도 의존성 때문에 온도에 따른 저항의 변화가 크다는 문제점이 있다.The conventional piezoresistive pressure sensor is manufactured such that four Piezo resistors constitute a Wheatstone bridge network, and when the resistance values of the bridges match, no offset occurs and a relatively large output can be obtained. However, these resistors have a problem in that the resistance changes with temperature due to the inconsistency of the resistance value due to the nonuniformity of impurity concentration, the temperature dependence of the piezoelectric resistance coefficient, and the temperature dependency of the silicon itself.

이러한 문제를 해결하기 위하여, 도 1 및 도 2에 도시된 바와 같이, 하나의 Piezo 저항(100)만이 다이어프램(200) 상에 형성되어 있는 전단 압저항 효과를 이용한 압력센서가 제안되었다.In order to solve this problem, as shown in FIGS. 1 and 2, a pressure sensor using a shear piezoresistive effect in which only one piezo resistor 100 is formed on the diaphragm 200 has been proposed.

하나의 Piezo 저항(100)으로 제작되는 전단 압저항 효과를 이용하는 압력센서는 웨이퍼의 실리콘을 드라이에칭으로 식각을 하여 형성된 사각형의 다이어프램(200)과 다이어프램(200)의 변의 중앙부에 변과 45°각도를 이루도록 연결되어 형성되는 Piezo 저항(100)을 구비한다.The pressure sensor using the shear piezoresistive effect produced by one piezo resistor 100 has a square diaphragm 200 and a 45 ° angle at the center of the diaphragm 200 and the diaphragm 200 formed by etching silicon of the wafer by dry etching. Piezo resistor 100 is formed to be connected to form.

하나의 Piezo 저항(100)으로 제작되는 전단 압저항 효과를 이용하는 압력센서는 4개의 분리된 Piezo 저항이 휘트스톤 브릿지 회로망을 구성하는 압력센서에 비해 온도보상이 쉬운 장점이 있다. 하지만, 감도가 낮아 높은 출력을 얻지 못하는 문제점이 있으며, 또한, 다이어프램의 두께조절로 압력센서의 감도를 제어함으로써 한 장의 웨이퍼 상에 한가지의 출력을 나타내는 센서 밖에 제작할 수 없는 문제점이 있다.The pressure sensor using the shear piezoresistive effect produced by one Piezo resistor 100 has the advantage of easy temperature compensation compared to the pressure sensor that consists of four separate Piezo resistors in the Wheatstone bridge network. However, there is a problem that a low sensitivity is not obtained a high output, and also, by controlling the sensitivity of the pressure sensor by adjusting the thickness of the diaphragm, there is a problem that only a sensor indicating one output on a single wafer can be manufactured.

본 발명은 상기 기술한 바와 같은 문제점을 해결하기 위해 안출된 것으로서, 높은 출력전압을 얻을 수 있는 전단응력을 이용한 압저항형 압력센서와 출력전압이 서로 상이한 전단응력을 이용한 압저항형 압력센서를 한 장의 웨이퍼 상에서 제작할 수 있는 방법을 제공함에 목적이 있다.The present invention has been made to solve the problems described above, a piezoresistive pressure sensor using a shear stress that can obtain a high output voltage and a piezoresistive pressure sensor using a shear stress different from the output voltage. It is an object of the present invention to provide a method that can be fabricated on a wafer.

상기 목적을 달성하기 위한 본 발명에 따른 전단응력을 이용한 압저항형 압력센서는, 기판위에 형성된 다이어프램과 상기 다이어프램에 형성되며 상호 직렬 연결된 복수의 Piezo 저항을 구비한다.A piezoresistive pressure sensor using a shear stress according to the present invention for achieving the above object, has a diaphragm formed on a substrate and a plurality of Piezo resistors formed in the diaphragm and connected in series.

상기 다이어프램은 사각형으로 이루어지고, 상기 복수의 Piezo 저항은 상기 다이어프램의 각 변 중앙부에 형성되어 있는 것이 바람직하다.It is preferable that the diaphragm is formed in a quadrangle, and the plurality of Piezo resistors are formed at the center of each side of the diaphragm.

한편, 본 발명에 따른 전단응력을 이용한 압저항형 압력센서 제조방법은, 기판위에 다이어프램층을 형성하는 단계, 상기 다이어프램층을 구획하여 복수의 다이어프램을 형성하는 단계 및 상기 복수로 구획된 다이어프램 각각에 1개 또는 상호 직렬 연결된 복수의 Piezo 저항을 형성하되, 서로 다른 갯수의 상기 Piezo 저항이 형성된 상기 다이어프램이 적어도 2 이상 있도록 형성함으로써 상기 기판상에 2종류 이상의 압력센서 칩을 형성하는 단계를 구비한다.On the other hand, in the method for manufacturing a piezoresistive pressure sensor using a shear stress according to the present invention, forming a diaphragm layer on a substrate, partitioning the diaphragm layer to form a plurality of diaphragms and each of the plurality of divided diaphragms Forming one or a plurality of piezo resistors connected in series, and forming at least two diaphragms having different numbers of piezo resistors, thereby forming at least two pressure sensor chips on the substrate.

본 발명에 따르면, 전단응력을 이용한 압저항형 압력센서에서 기판위에 형성 된 다이어프램의 변 중앙부에 복수의 Piezo 저항을 상호 직렬로 연결함으로써 높은 출력전압을 얻을 수 있는 효과가 있다. 본 발명의 다른 효과로는 한 장의 웨이퍼 상에 형성된 복수의 다이어프램상에 1개 또는 상호 직렬 연결된 복수의 Piezo 저항을 형성하되, 서로 다른 갯수의 Piezo 저항이 형성된 다이어프램이 적어도 2 이상 있도록 형성함으로써 기판상에 2종류 이상의 압력센서 칩을 형성하여 출력전압이 서로 상이한 전단응력을 이용한 압저항형 압력센서를 한 장의 웨이퍼 상에서 제작할 수 있는 효과가 있다.According to the present invention, in the piezoresistive pressure sensor using the shear stress, a high output voltage can be obtained by connecting a plurality of Piezo resistors in series to the center portion of the diaphragm formed on the substrate. Another effect of the present invention is to form one or a plurality of piezo resistors connected in series on a plurality of diaphragms formed on one wafer, but at least two or more diaphragms formed with different numbers of piezo resistors are formed on a substrate. Two or more kinds of pressure sensor chips are formed in the piezo-resistive pressure sensor using shear stresses having different output voltages.

이하, 본 발명의 전단응력을 이용한 압저항형 압력센서 및 그 제조방법에 관해 도면을 참조하여 상세히 설명하기로 한다.Hereinafter, a piezoresistive pressure sensor using a shear stress of the present invention and a manufacturing method thereof will be described in detail with reference to the accompanying drawings.

본 발명의 전단응력을 이용한 압저항형 압력센서는, 도 3에 도시된 바와 같이, 다이어프램(200)의 2개 변의 중앙부에 하나씩 형성되어 있는 상호 직렬로 연결되는 2개의 Piezo 저항(100)을 구비한다.The piezoresistive pressure sensor using the shear stress of the present invention, as shown in Figure 3, is provided with two Piezo resistors 100 are connected in series with each other formed in the central portion of the two sides of the diaphragm 200 do.

다이어프램(200)과 Piezo 저항(100)은, 도 1 및 도 2에 도시된 종래의 전단 압저항 효과를 이용하는 압력센서에서 적용된 것과 같은, 웨이퍼의 실리콘을 드라이에칭으로 식각을 하여 형성된 사각형의 다이어프램(200)과 다이어프램(200) 상의 각 변의 중앙부에 변과 45°각도를 이루도록 이온주입을 통해 형성된 Piezo 저항(100)이 된다. 한편, 웨이퍼는 SOI웨이퍼가 사용될 수 있다.The diaphragm 200 and the piezo resistor 100 are rectangular diaphragms formed by etching the silicon of the wafer by dry etching, as applied in a pressure sensor utilizing the conventional shear piezoresistive effect shown in FIGS. 200) and a piezo resistor 100 formed through ion implantation to form an angle of 45 ° with the sides at the center of each side on the diaphragm 200. On the other hand, the wafer may be used an SOI wafer.

도 4는 2개의 Piezo 저항(100)이 서로 인접한 변에 형성된 것을 나타낸 도면이다. 또한, 도 5 및 도 6에 도시된 바와 같이, 3개의 Piezo 저항(100) 또는 4개의 Piezo 저항(100)이 다이어프램(200)의 각 변의 중앙부에 하나씩 변과 45°각도를 이루며 상호 직렬로 연결되어 배열될 수도 있다.4 is a view showing that two Piezo resistors 100 are formed on sides adjacent to each other. In addition, as shown in FIGS. 5 and 6, three Piezo resistors 100 or four Piezo resistors 100 are connected to each other in series at an angle of 45 ° with one side at the center of each side of the diaphragm 200. May be arranged.

한편, Piezo 저항(100)이 다이어프램(200)의 각 변의 중앙에 변과 45°각도를 이루며 형성되도록 한 것은, 전단응력을 이용한 압저항형 압력센서의 감도가 수직응력 방향과 전류방향이 이루는 각인 a에 대한 sin2a값에 비례하게 되므로 감도를 높이기 위해 Piezo 저항(100)을 다이어프램(200)의 변의 중앙부에 형성시키고, 그 변에서 45°회전시켜 sin2a가 최대가 되도록 한 것이다.On the other hand, the piezo resistor 100 is formed at the center of each side of the diaphragm 200 at an angle of 45 °, the stamping of the sensitivity of the piezoresistive pressure sensor using the shear stress to the vertical stress direction and the current direction The piezo resistor 100 is formed at the center of the side of the diaphragm 200 in order to increase the sensitivity because it is proportional to the sin2a value for a, and rotates 45 ° from the side to maximize sin2a.

전단응력을 이용한 압저항형 압력센서의 출력전압은 하기의 수학식 1로 계산된다.The output voltage of the piezoresistive pressure sensor using the shear stress is calculated by Equation 1 below.

Figure 112008087354100-PAT00001
Figure 112008087354100-PAT00001

여기서 Vy는 출력전압, L은 저항의 길이, W는 저항의 폭, S는 감도, Vs는 입력전압을 나타낸다.Where V y is the output voltage, L is the length of the resistor, W is the width of the resistor, S is the sensitivity, and V s is the input voltage.

출력전압을 높이기 위해서는 L이 커지도록 설계를 해야 하며, 따라서, 도 3 내지 도 6에 도시된 바와 같이, 사각형 모양의 다이어프램(200)의 각 변 중앙부에 하나씩, 전단응력을 이용한 Piezo 저항(100) 2개, 3개, 4개가 상호 직렬연결 되도록 형성함으로써 L의 값이 2배, 3배, 4배로 증가하여 출력전압이 증대되는 효과가 발생한다.In order to increase the output voltage, L must be designed to be large. Therefore, as shown in FIGS. 3 to 6, the piezo resistor 100 using shear stress, one at the center of each side of the rectangular diaphragm 200, is used. By forming two, three, and four in series, the value of L increases by 2, 3, and 4 times, resulting in an increase in output voltage.

본 발명의 전단응력을 이용한 압저항형 압력센서의 제조방법은, 도 7에 도시된 바와 같이, 한 장의 SOI웨이퍼의 벌크실리콘을 드라이에칭으로 식각을 하여 다이어프램층을 형성하고, 형성된 다이어프램층을 복수의 사각형 다이어프램(200)으로 구획한 다음, 이온주입을 통해 1개 또는 상호 직렬 연결된 4개의 Piezo 저항(100)을 구획된 각 다이어프램(200)의 각 변의 중앙부에 하나씩, 변과 45°각도를 이루도록 형성하여 본 발명의 전단응력을 이용한 압저항형 압력센서를 제작하게 된다. 이때, 한 장의 웨이퍼 상에 서로 다른 갯수의 Piezo 저항(100)이 형성된 다이어프램(200)이 적어도 2 이상 있도록 형성함으로써 기판상에 2종류 이상의 압력센서 칩을 형성하여 출력전압이 서로 상이한 전단응력을 이용한 압저항형 압력센서를 한 장의 웨이퍼 상에서 제작할 수 있게 된다.In the manufacturing method of the piezoresistive pressure sensor using the shear stress of the present invention, as shown in Figure 7, by etching the bulk silicon of one SOI wafer by dry etching to form a diaphragm layer, a plurality of formed diaphragm layer Partitioned into square diaphragms 200 and then one or four piezo resistors 100 connected in series through ion implantation, one at the center of each side of each partitioned diaphragm 200, to form an angle of 45 ° with the sides. To form a piezoresistive pressure sensor using the shear stress of the present invention. At this time, the diaphragm 200 in which different numbers of piezo resistors 100 are formed on at least one wafer is formed so that at least two or more types of pressure sensor chips are formed on the substrate, thereby using shear stresses having different output voltages. Piezoresistive pressure sensors can be fabricated on a single wafer.

이상에서는 본 발명의 실시 예에 대해서 도시하고 설명하고 있으나, 본 발명은 상술한 특정의 실시 예에 한정되지 아니하며 당해 기술분야에서 통상의 지식을 가진 자라면 본 발명의 범위 내에서 다양한 변형실시가 가능함은 물론, 그러한 변형은 본 발명의 특허청구범위에 기재된 본 발명의 범위에 속하는 것이다.Although the embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described specific embodiments, and various modifications can be made within the scope of the present invention by those skilled in the art. Of course, such modifications fall within the scope of the present invention described in the claims of the present invention.

도 1 은 다이어프램에 Piezo 저항 1개가 형성된 배치도1 is a layout view in which one piezo resistor is formed on a diaphragm

도 2 는 도 1 의 선 A-A'를 따르는 단면도2 is a cross-sectional view along the line A-A 'of FIG.

도 3 및 도 4 는 본 발명에 따른 다이어프램에 Piezo 저항 2개가 형성된 배치도3 and 4 are layout views in which two piezo resistors are formed in the diaphragm according to the present invention.

도 5 는 본 발명에 따른 다이어프램에 Piezo 저항 3개가 형성된 배치도5 is a layout view in which three piezo resistors are formed in a diaphragm according to the present invention;

도 6 는 본 발명에 따른 다이어프램에 Piezo 저항 4개가 형성된 배치도6 is a layout view in which four piezo resistors are formed on a diaphragm according to the present invention;

도 7 은 본 발명에 따른 한 장의 웨이퍼 상에 1개 내지 4개의 Piezo 저항이 형성된 것을 나타낸 개략도.7 is a schematic view showing one to four Piezo resistors formed on a single wafer according to the present invention.

<도면의 주요 부분에 관한 부호의 설명><Explanation of symbols on main parts of the drawings>

100: Piezo 저항 200: 다이어프램100: Piezo Resistance 200: Diaphragm

300: SiO2 400: 실리콘 기판300: SiO 2 400: silicon substrate

Claims (3)

기판위에 형성된 다이어프램; 및A diaphragm formed on the substrate; And 상기 다이어프램상에 형성되며, 상호 직렬 연결된 복수의 Piezo 저항;A plurality of Piezo resistors formed on the diaphragm and interconnected in series; 을 포함하는 것을 특징으로 하는 전단응력을 이용한 압저항형 압력센서.Piezoresistive pressure sensor using a shear stress, characterized in that it comprises a. 제 1 항에 있어서,The method of claim 1, 상기 다이어프램은 사각형으로 이루어지고, 상기 복수의 Piezo 저항은 상기 다이어프램의 각 변 중앙부에 하나씩 형성되어 있는 것을 특징으로 하는 전단응력을 이용한 압저항형 압력센서.The diaphragm is formed in a quadrangle, and the piezo resistors are piezoresistive pressure sensors using shear stress, characterized in that one is formed at the center of each side of the diaphragm. 기판위에 다이어프램층을 형성하는 단계;Forming a diaphragm layer on the substrate; 상기 다이어프램층을 구획하여 복수의 다이어프램을 형성하는 단계; 및Partitioning the diaphragm layer to form a plurality of diaphragms; And 상기 다이어프램 각각에 1개 또는 상호 직렬 연결된 복수의 Piezo 저항을 형성하되, 서로 다른 갯수의 상기 Piezo 저항이 형성된 상기 다이어프램이 적어도 2 이상 있도록 형성함으로써 상기 기판상에 2종류 이상의 압력센서 칩을 형성하는 단계;Forming one or a plurality of piezo resistors connected in series to each of the diaphragms, and forming two or more kinds of pressure sensor chips on the substrate by forming at least two diaphragms in which different numbers of the piezo resistors are formed; ; 를 포함하는 것을 특징으로 하는 전단응력을 이용한 압저항형 압력센서 제작 방법.Piezoresistive pressure sensor manufacturing method using a shear stress characterized in that it comprises a.
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