KR20100069819A - Reference voltage generator - Google Patents

Reference voltage generator Download PDF

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Publication number
KR20100069819A
KR20100069819A KR1020080128352A KR20080128352A KR20100069819A KR 20100069819 A KR20100069819 A KR 20100069819A KR 1020080128352 A KR1020080128352 A KR 1020080128352A KR 20080128352 A KR20080128352 A KR 20080128352A KR 20100069819 A KR20100069819 A KR 20100069819A
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KR
South Korea
Prior art keywords
voltage
input terminal
current
temperature
differential amplifier
Prior art date
Application number
KR1020080128352A
Other languages
Korean (ko)
Inventor
임종만
Original Assignee
주식회사 하이닉스반도체
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Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020080128352A priority Critical patent/KR20100069819A/en
Publication of KR20100069819A publication Critical patent/KR20100069819A/en

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

The present invention provides a temperature proportional current generator configured to generate a temperature proportional current according to a difference between a first voltage and a second voltage; A temperature inverse current generator configured to generate a temperature inverse current according to a difference between the first voltage and a third voltage; And a reference voltage generator configured to generate a reference voltage proportional to the sum of the temperature proportional current and the temperature inverse current, and for receiving the first input terminal and the second voltage for receiving the first voltage. Provided is a reference voltage generator in which a capacitor is connected between at least one of a second input terminal and between a third input terminal for receiving the first voltage and a fourth input terminal for receiving the third voltage.

Description

Reference voltage generator {REFERENCE VOLTAGE GENERATOR}

The present invention relates to a semiconductor circuit, and more particularly to a reference voltage generator.

Semiconductor circuits, for example, Dynamic Random Access Memory (DRAM) use reference voltages to generate various operating voltages used therein.

A reference voltage generator is provided to generate the reference voltage, and the reference voltage generator may be implemented in various ways.

Since the reference voltage is used as a reference for generating the operating voltage, it should have a characteristic that is insensitive to changes in operating environment, for example, temperature. In other words, a constant level must be maintained regardless of temperature changes.

Therefore, as a reference voltage generator, a band gap reference having excellent temperature change compensation characteristics is mainly used.

However, the reference voltage generator according to the prior art, as shown in Figure 1, when the noise is applied to the power source noise, that is, the external voltage (VDD) used for generating the reference voltage (VERF), the reference voltage (VERF) There is a problem that the level is lower than the target level.

As such, when the level of the reference voltage VERF is lowered, the operation performance of the semiconductor circuit using the same may be greatly reduced.

It is an object of the present invention to provide a reference voltage generator capable of generating a reference voltage of a constant level regardless of power supply noise.

The reference voltage generator according to the present invention includes a temperature proportional current generator configured to generate a temperature proportional current according to a difference between the first voltage and the second voltage; A temperature inverse current generator configured to generate a temperature inverse current according to a difference between the first voltage and a third voltage; And a reference voltage generator configured to generate a reference voltage proportional to the sum of the temperature proportional current and the temperature inverse current, and for receiving the first input terminal and the second voltage for receiving the first voltage. A capacitor is connected between at least one of a second input terminal and between a third input terminal for receiving the first voltage and a fourth input terminal for receiving the third voltage.

In the reference voltage generator according to the present invention, a first voltage proportional to the amount of current flowing through the first current path is applied to the first input terminal, and a second voltage proportional to the amount of current flowing through the second current path is applied to the second input terminal. A first differential amplifier applied and configured to adjust an amount of current in the first current path and the second current path according to a difference between the first voltage and the second voltage; And a first voltage is applied to the first input terminal, and a third voltage is applied to the second input terminal in proportion to the amount of current flowing through the third current path, and according to the difference between the first voltage and the third voltage. A second differential amplifier configured to adjust an amount of current in a third current path, between a first input terminal of the first differential amplifier and a second input terminal of the first differential amplifier, and with a first input terminal of the second differential amplifier; By connecting a capacitor to at least one of the second input terminal of the second differential amplifier, the second voltage or the third voltage is configured to vary by the variation range of the first voltage.

The reference voltage generator according to the present invention can maintain a constant level of the reference voltage irrespective of power supply noise, and can improve the operating performance of the semiconductor device using the same because the level of the reference voltage is kept constant.

Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the reference voltage generator according to the present invention.

2 is a circuit diagram of a reference voltage generator according to the present invention.

As shown in FIG. 2, the reference voltage generator 100 according to the present invention includes a temperature proportional current generator 110, a temperature inverse current generator 120, and a reference voltage generator 130.

The temperature proportional current generator 110 may include first to fifth transistors M1 to M3, Q1 and Q2, a first resistor R1, a first differential amplifier OP1, and a first to third decoupling capacitor C1. ~ C3).

The first to third transistors M1 to M3 are field effect transistors (FETs), and the fourth and fifth transistors Q1 and Q2 are bipolar junction transistors (BJTs) having negative temperature coefficients.

The first to third transistors M1 to M3 receive a common input of an external voltage VDD to a source and a common input of an output of the first differential amplifier OP1 to a gate.

The first temperature coefficient voltage PTATIN is applied to a first input terminal (−) of the first differential amplifier OP1 through a node where the second transistor M2 and the fifth transistor Q2 are connected.

The second temperature coefficient voltage PTATINS is applied to a second input terminal (+) of the first differential amplifier OP1 through a node where the first transistor M1 and the fourth transistor Q1 are connected.

A first decoupling capacitor C1 is connected between a first input terminal (−) and a second input terminal (+) of the first differential amplifier OP1.

A second decoupling capacitor C2 is connected between the second input terminal (+) of the first differential amplifier OP1 and the second input terminal (+) of the second differential amplifier OP2.

A third decoupling capacitor C3 is connected to the fifth transistor Q2.

The temperature inverse current generator 120 includes sixth and seventh transistors M6 and M7, a second resistor R2, and a second differential amplifier OP2.

The sixth and seventh transistors M6 and M7 are field effect transistors (FETs), and receive an external voltage VDD from a source, and a common input of an output of the second differential amplifier OP2 to a gate. The second resistor R2 is connected between the drain and the ground terminal of the sixth transistor M4.

The first temperature coefficient voltage PTATIN is applied to a first input terminal (−) of the second differential amplifier OP2, and the sixth transistor M4 and a second resistor R2 are applied to a second input terminal (+). The third temperature coefficient voltage CTATIN is applied through this connected node.

The reference voltage generator 130 includes a third resistor R3.

One end of the third resistor R3 is commonly connected to the drain of the third transistor M3 and the drain of the seventh transistor M5 at one end of the third resistor R3, and The other end is connected to the ground end.

The output terminal of the reference voltage VERF is connected to a node between one end of the third resistor R3 and the connection node of the seventh transistor M5 and the drain of the third transistor M3.

The first to seventh transistors M1 to M3, Q1, Q2, M4 and M5 are designed to have a predetermined magnification size with respect to each other, and the magnification is displayed on the right side of each transistor of FIG. 2. That is, when X1, which is the size magnification of the first transistor M1, is referred to as the basic magnification, Xa becomes a times X1 and XM becomes M times X1. Accordingly, the first transistor M1 having a size magnification X1. The current flowing through the third transistor M3 having the current flowing through IPTAT and the size magnification XM becomes M * IPTAT.

Referring to the operation principle of the reference voltage generator according to the present invention configured as described above are as follows.

The temperature proportional current generator 110 generates a temperature proportional current IPTAT whose current amount increases as the temperature increases.

That is, the emitter-base voltages VEB1 and VEB2 of the fourth and fifth transistors Q1 and Q2 having negative temperature coefficients drop as the temperature increases, and accordingly the first temperature coefficient voltage PTATIN And the second temperature coefficient voltage PTATINS also change.

The first differential amplifier OP1 amplifies a difference between the variable first temperature coefficient voltage PTATIN and the second temperature coefficient voltage PTATINS and drives the first to third transistors M1 to M3 to increase the temperature. Generates a temperature proportional current (IPTAT) in which the amount of current increases.

Meanwhile, the temperature inverse current generator 120 generates a temperature inverse current ICTAT in which the amount of current decreases as the temperature increases.

The temperature proportional current IPTAT and the temperature inverse current ICTAT flow through the same current path, that is, the third resistor R3 of the reference voltage generator 130, and the temperature proportional current IPTAT of the temperature increases. The increase in current amount and the decrease in current amount of the temperature inversely proportional current (ICTAT) become equal.

As a result, even if the temperature fluctuation occurs, the amount of current flowing through the third resistor R3 is always kept constant, so the level of the reference voltage VERF is also kept constant.

The first temperature coefficient voltage PTATIN is a voltage level commonly used as an operation reference of the first differential amplifier OP1 and the second differential amplifier OP2. The second temperature coefficient voltage PTATINS and the third temperature coefficient voltage CTATIN are equal to each other of the first differential amplifier OP1 and the second differential amplifier OP2 according to the variation of the first temperature coefficient voltage PTATIN. It is affected by the work and is variable.

Therefore, the level of the first temperature coefficient voltage PTATIN is changed by the noise component included in the external voltage VDD, particularly the high frequency noise component. However, when the gain according to the high frequency inputs of the first differential amplifier OP1 and the second differential amplifier OP2 is not sufficient, the second temperature coefficient voltage PTATINS and the third temperature coefficient voltage CTATIN become the first temperature. It cannot be changed by the fluctuation range of the count voltage PTATIN.

However, in the present invention, the first to third decoupling capacitors C1 to C3 include the first temperature coefficient voltage PTATIN, the second temperature coefficient voltage PTATINS, and the third temperature coefficient voltage CTATIN. ) And a second temperature coefficient voltage PTATINS and a third temperature coefficient voltage CTATIN in response to a change in the first temperature coefficient voltage PTATIN since the voltage is connected between the nodes applied to the second differential amplifier OP2). Will change. Therefore, the first differential amplifier OP1 and the second differential amplifier OP2 can operate normally regardless of their high frequency gain.

3 is a waveform diagram of a reference voltage according to the present invention.

As a result, the reference voltage generator according to the present invention operates according to the above-described operating principle, so that the reference voltage VERF can be constantly maintained even when the high frequency noise is included in the external voltage VDD as shown in FIG. 3. have.

As those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features, the embodiments described above are exemplary in all respects and are not intended to be limiting. You must do it. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 is a waveform diagram of a reference voltage according to the prior art,

2 is a circuit diagram of a reference voltage generator according to the present invention;

3 is a waveform diagram of a reference voltage according to the present invention.

<Description of Symbols for Main Parts of Drawings>

110: temperature proportional current generator 120: temperature inverse current generator

130: reference voltage generator

Claims (7)

A temperature proportional current generator configured to generate a temperature proportional current according to a difference between the first voltage and the second voltage; A temperature inverse current generator configured to generate a temperature inverse current according to a difference between the first voltage and a third voltage; And A reference voltage generator configured to generate a reference voltage proportional to a current obtained by adding the temperature proportional current and the temperature inverse current; Between a first input terminal for receiving the first voltage and a second input terminal for receiving the second voltage, and between a third input terminal for receiving the first voltage and a fourth input terminal for receiving the third voltage. A reference voltage generator device having a capacitor connected to at least one of the. The method of claim 1, And a capacitor connected between the second input terminal and the fourth input terminal. The method of claim 2, The temperature proportional current generator First and second current driving elements commonly connected to a power supply terminal and configured to generate temperature proportional currents of a predetermined ratio according to the differential amplification signal, First and second transistors connected between each of the first and second current driving elements and a ground terminal and having different negative temperature coefficients, and Output the differential amplified signal according to a difference between the first voltage applied between the first current driving device and the first input terminal and the second voltage applied between the second current driving device and the second input terminal. Is composed, And a differential amplifier having a capacitor connected between the first input terminal and the second input terminal. The method of claim 3, wherein And a capacitor connected between the emitter and the ground terminal of the first transistor. The method of claim 2, The temperature inverse current generating unit First and second current driving elements connected to a power supply terminal and configured to generate temperature proportional currents of a predetermined ratio according to the differential amplification signal, respectively, and And output the differential amplified signal according to a difference between the first voltage and the third voltage applied between the first current driving element and the fourth input terminal. And a differential amplifier having a capacitor connected between the third input terminal and the fourth input terminal. A first voltage proportional to the amount of current flowing through the first current path is applied to the first input terminal, and a second voltage proportional to the amount of current flowing through the second current path is applied to the second input terminal, wherein the first voltage and the A first differential amplifier configured to adjust an amount of current in the first current path and the second current path according to a difference in a second voltage; And The first voltage is applied to the first input terminal, and a third voltage proportional to the amount of current flowing through the third current path is applied to the second input terminal, and the third voltage is applied according to the difference between the first voltage and the third voltage. A second differential amplifier configured to adjust the amount of current in the current path, By connecting a capacitor between at least one of a first input terminal of the first differential amplifier and a second input terminal of the first differential amplifier and between a first input terminal of the second differential amplifier and a second input terminal of the second differential amplifier And a reference voltage generator configured to vary the second voltage or the third voltage by a fluctuation range of the first voltage. The method of claim 6, And a capacitor coupled between the second input end of the first differential amplifier and the second input end of the second differential amplifier.
KR1020080128352A 2008-12-17 2008-12-17 Reference voltage generator KR20100069819A (en)

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KR1020080128352A KR20100069819A (en) 2008-12-17 2008-12-17 Reference voltage generator

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Application Number Priority Date Filing Date Title
KR1020080128352A KR20100069819A (en) 2008-12-17 2008-12-17 Reference voltage generator

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8509008B2 (en) 2010-10-26 2013-08-13 SK Hynix Inc. Internal voltage generator of semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8509008B2 (en) 2010-10-26 2013-08-13 SK Hynix Inc. Internal voltage generator of semiconductor memory device

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