KR20100061134A - Method of fabricating nitride semiconductor light emitting device and nitride semiconductor light emitting device fabricated thereby - Google Patents

Abstract

PURPOSE: A manufacturing method of a nitride semiconductor light emitting device and a semiconductor light emitting device manufactured by the same method are provided to reduce a total reflection on an interface by forming an uneven pattern including a plurality of the holes with examining a laser beam on a growth substrate. CONSTITUTION: A buffer layer(120) is formed on the single-side of a growth substrate. A light emitting structure(130) including laminated a first conductive type nitride layer(131), an active layer(133) and a second conductive type nitride layer(135) is formed on the buffer layer. A partial domain of the first conductive type nitride layer is mesa-etched among the light emitting structure. A first conductive type electrode is formed on the partial domain of the exposed first conductive type nitride layer. A second conductive type electrode is formed on the second conductive type nitride layer. A plurality of holes is formed on the other side of the growth substrate with examining a laser beam.

Description

A method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured by the method

The present invention relates to a method for manufacturing a nitride semiconductor light emitting device and to a nitride semiconductor light emitting device manufactured by the method, and more particularly, light extraction efficiency by forming a concave-convex pattern consisting of a plurality of holes on the light emitting surface by irradiating a laser beam. The present invention relates to a method for manufacturing a nitride semiconductor light emitting device which can be improved, and to a nitride semiconductor light emitting device manufactured by the method.

Recently, a nitride semiconductor light emitting device is a light emitting device capable of generating light of a wide wavelength band including short wavelength light such as blue or green, and is gradually moving away from the market for conventional simple displays or portable liquid crystal displays. It is widely spotlighted in various fields such as traffic lights, guides for airport runways, lights for aircraft and automobiles, highly directional reading lights, and the like.

In such a nitride semiconductor light emitting device, the most problematic problem is low luminous efficiency. In general, the light efficiency of a nitride semiconductor light emitting device is determined by internal quantum efficiency and light extraction efficiency (also called external quantum efficiency). In particular, the light extraction efficiency is determined by the optical factors of the light emitting device, that is, the refractive index of each structure and the flatness of the interface.

In terms of light extraction efficiency, nitride semiconductor light emitting devices have fundamental limitations. That is, since the semiconductor layer constituting the semiconductor light emitting device has a larger refractive index than the external atmosphere or the substrate, the critical angle that determines the range of incidence angles of light emission becomes small, and as a result, a large portion of the light generated from the active layer is totally internally reflected and substantially Propagating in unwanted directions or traveling inside the device and then decaying it, resulting in increased heat generation from the device, lower device efficiency, and reduced device life. In addition, the light extraction efficiency is low due to the loss in the total reflection process.

In order to solve this problem, as a method for improving the light extraction efficiency, the flip chip (Flip chip) is adopted to reflect the light emitted to the front and the opposite surface, which is the light emitting surface to the front using the rear reflecting film, Although the extraction efficiency was improved to 40% by utilizing light that was reduced due to the low transmittance of the p-type electrode, the problem of light extraction efficiency reduction due to total internal reflection remains.

In addition, a method of forming an uneven pattern on a surface through which light is transmitted to the outside has been proposed. As a method of forming the uneven pattern, reactive ion etching (RIE) or the like is generally applied to an n-type nitride semiconductor layer. In addition, there is a problem that the region around the uneven pattern suffers from plasma damage and the light extraction efficiency is still lowered.

In addition, in order to form a pattern on the surface of the sapphire in the flip chip structure in order to increase the light extraction efficiency of the conventional nitride semiconductor light emitting device, sapphire with a thickness of 430㎛ or more to a thickness of 80 ~ 150㎛ through lapping and polishing process It should be formed, and because the patterned through the photo masking process on the back of the sapphire has a problem that the process is difficult and the yield is low. In addition, it is difficult to control the depth of the unevenness during dry etching or wet etching such as ICP for patterning, and may damage the device part in the process of deepening the unevenness. That is, in order to form a pattern, an additional process such as photolithography, dry etching, wet etching, and the like is required, thereby increasing costs by increasing the overall process time.

The present invention is to solve the above-described problems, an object of the present invention is to simplify the process of forming the uneven pattern by using the irradiation of the laser beam in forming the uneven pattern consisting of a plurality of holes in the growth substrate for the entire manufacturing process time The present invention provides a method for manufacturing a nitride semiconductor light emitting device which can shorten the manufacturing cost, thereby lowering the manufacturing cost, and improving mass productivity and yield.

In addition, another object of the present invention is to provide a method of manufacturing a nitride semiconductor light emitting device which can improve the light extraction efficiency by forming a concave-convex pattern consisting of a plurality of holes in the growth substrate by irradiation of a laser beam.

In addition, another object of the present invention is to provide a nitride semiconductor light emitting device manufactured by the method for manufacturing the nitride semiconductor light emitting device.

Method of manufacturing a nitride semiconductor light emitting device according to an aspect of the present invention for achieving the above object comprises the steps of forming a buffer layer on one surface of the growth substrate; Forming a light emitting structure in which a first conductive nitride layer, an active layer, and a second conductive nitride layer are sequentially stacked on the buffer layer; Mesa etching a portion of the first conductive nitride layer of the light emitting structure to be exposed; Forming a first conductive electrode and a second conductive electrode on a portion of the exposed first conductive nitride layer and the second conductive nitride layer, respectively; And forming a plurality of holes by irradiating a laser beam to the other surface of the growth substrate.

At this time, the growth substrate is characterized in that the substrate made of at least one material of sapphire, AlN, GaN and SiC.

Forming a plurality of holes by irradiating a laser beam on the other surface of the growth substrate is performed using a laser beam of 226nm ~ 900nm wavelength band, and also by irradiating a laser beam on the other surface of the growth substrate The forming of the two holes may include forming the holes at a depth of 5 to 10% of the thickness of the growth substrate, and forming a plurality of holes by irradiating a laser beam to the other surface of the growth substrate. And the end of the hole is formed in a sharp shape.

And forming a reflective electrode layer on the second conductive nitride layer after mesa etching so that a portion of the first conductive nitride layer of the light emitting structure is exposed. After forming a plurality of holes by irradiating a laser beam on the other surface, forming a reflective metal layer on the other surface of the growth substrate; The reflective metal layer further comprises Ag, Al, Rh, Ru, Au, Cu And at least one metal layer selected from the group consisting of Pd, Cr, Ni, Co, Ti, In and Mo or an alloy layer thereof.

Meanwhile, the nitride semiconductor light emitting device manufactured by the method of manufacturing the nitride semiconductor light emitting device according to an aspect of the present invention has one surface and the other surface opposite to the one surface, and a plurality of holes are formed on the other surface by irradiation of a laser beam. A growth substrate formed; The first conductive nitride layer, the active layer, and the second conductive nitride layer are sequentially stacked on one surface of the growth substrate, and the active layer and the second conductive nitride layer are exposed to expose the first conductive nitride layer. A light emitting structure formed; And first and second conductive electrodes formed on the first conductive nitride layer and the second conductive nitride layer, respectively.

In this case, the first conductive electrode is formed on a portion of the first conductive nitride layer exposed by mesa etching of the light emitting structure, and the growth substrate is formed of at least one of sapphire, AlN, GaN, and SiC. The material is also made of a substrate.

The hole is formed to a depth of 5 to 10% of the thickness of the growth substrate, the end of the hole is characterized in that a sharp shape.

A buffer layer formed between one surface of the growth substrate and the light emitting structure; and further, a reflective electrode layer formed on the second conductive nitride layer; and further formed on the other surface of the growth substrate. And a reflective metal layer, wherein the reflective metal layer is at least one metal layer selected from the group consisting of Ag, Al, Rh, Ru, Au, Cu, Pd, Cr, Ni, Co, Ti, In, and Mo or It is characterized by consisting of an alloy layer.

According to the present invention, by forming a concave-convex pattern consisting of a plurality of holes on the growth substrate by irradiation with a laser beam, the total reflection at the interface is reduced, the scattering is increased to improve the light extraction efficiency, thereby reducing the heat generation rate, The effect is to increase the output.

In addition, according to the present invention, by forming a concave-convex pattern consisting of a plurality of holes by the irradiation of the laser beam on the growth substrate, thereby simplifying the entire manufacturing process, there is an effect of lowering the manufacturing cost, and improves productivity and yield.

Further, according to the present invention, when the unevenness consisting of a plurality of holes is formed on the growth substrate by irradiation of a laser beam, the depth of the hole can be easily controlled by adjusting the wavelength band of the laser beam to be used.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art. In addition, it should be considered that elements of the drawings attached to the present specification may be enlarged or reduced for convenience of description.

1 is a side cross-sectional view for each process for explaining a method for manufacturing a nitride semiconductor light emitting device according to one embodiment of the present invention. Here, a method of manufacturing a nitride semiconductor light emitting device is manufactured in plural using a predetermined wafer, but FIG. 1 illustrates a method of manufacturing only one light emitting device for convenience of description.

First, as shown in FIG. 1A, the buffer layer 120 is grown on one surface of the growth substrate 110. The buffer layer 120 is a layer for buffering lattice mismatch between the growth substrate 110 and the epitaxial layer, and is formed of undoped GaN.

Here, the growth substrate 110 may be a substrate made of at least one material of sapphire, AlN, GaN and SiC.

Subsequently, as shown in FIG. 1B, when the buffer layer 120 is formed on one surface of the growth substrate 110, the light emitting structure 130 is grown on the buffer layer 120. Here, the light emitting structure 130 is a structure in which the first conductive nitride layer 131, the active layer 133, and the second conductive nitride layer 135 are sequentially stacked, and the light emitting structure 130 is formed in the first structure. The conductive nitride layer 131 is formed to contact the buffer layer 120.

In the present exemplary embodiment, the first conductive type and the second conductive type nitride layers 131 and 135 constituting the light emitting structure 130 may have an Al _x In _y Ga _(1-xy) N composition formula (where 0 ≦ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1) and the first conductive impurity and the second conductive impurity doped semiconductor material, GaN, AlGaN, InGaN have. In addition, Si, Ge, Se, Te, or C may be used as the first conductivity type impurity, and Mg, Zn, or Be, and the like are representative of the p-type impurity.

The active layer 133 is a layer in which light is generated by recombination of electrons and holes, and may be formed of a nitride semiconductor layer having a single or multiple quantum well structure. Although a nitride semiconductor is used in the present embodiment, the present invention is not limited thereto, and other kinds of semiconductor materials known in the art may be used.

The first conductive nitride layer 131, the active layer 133, and the second conductive nitride layer 135 may be formed by organometallic vapor deposition (MOCVD), molecular beam growth (MBE), and hydride vapor deposition (HVPE). Can be grown.

Subsequently, as shown in FIG. 1C, when the light emitting structure 130 is formed on the buffer layer 120, a partial region 137 of the first conductive nitride layer 131 of the light emitting structure 130 is formed. Etch mesa to expose. Thereafter, the first conductive electrode 150 and the second conductive electrode 140 are respectively disposed on the exposed partial region 137 and the second conductive nitride layer 135 of the first conductive nitride layer 131. Form.

Although not shown separately, before forming the second conductive electrode 140 on the second conductive nitride layer 135, a reflective metal layer (not shown) is formed on the second conductive nitride layer 135. The process may further include. Although the reflective metal layer is not an essential component in the present invention, in addition to the ohmic contact function with the second conductive nitride layer 135, the light emitted from the active layer 133 is reflected toward the first conductive nitride layer 131. It can contribute to the luminous efficiency by performing the function.

For this purpose, the reflective metal layer preferably has a reflectance of 90% or more, for example, from the group consisting of Ag, Al, Rh, Ru, Pt, Au, Cu, Pd, Cr, Ni, Co, Ti, In and Mo. There may be at least one metal layer or alloy layer selected, more preferably Ag, Al and alloys thereof, which preferably have high reflectance.

Subsequently, as shown in FIG. 1D, the first conductive type is disposed on the partial region 137 and the second conductive nitride layer 135 of the first conductive nitride layer 131 exposed by mesa etching. After forming the electrode 150 and the second conductive electrode 140, the other surface of the growth substrate 110 by irradiating the laser beam 160 to a depth of 5 ~ 10% of the thickness of the growth substrate 110 To form a plurality of holes 170. That is, the uneven pattern formed of the plurality of holes 170 is formed on the other surface of the growth substrate 110 by irradiating the laser beam 160.

At this time, the depth and width of the hole 170 to be formed can be adjusted according to the intensity and width of the laser beam 160, the width and spacing of the hole 170 is formed in the size of 0.5 ~ 10 ㎛.

In addition, the hole 170 has a sharp shape, that is, a width narrowing toward the end, and the bottom surface of the hole 170 is an amorphous surface etched by irradiation of a laser beam. That is, by forming the tip of the hole 170 in a sharp shape by using a laser beam, it is possible to reduce the total internal reflection due to the difference in refractive index between the growth substrate 110 and the external material.

The laser beam 160 is irradiated on the other surface of the growth substrate 110 by adjusting the width and intensity of the laser beam 160 according to the physical properties of the growth substrate 110 and the dimensions of the hole 170 to be obtained. Holes of desired dimensions are formed on the substrate surface, and an uneven pattern is formed on the substrate surface as a whole. The uneven pattern thus formed is shown to be formed regularly, but may be irregularly formed.

And, when the hole 170 is formed, it may be formed by irradiating the laser beam once, but if the strength of the laser beam is strong, damage to the growth substrate 110 (damage), so repeated several times with a weak strength hole 170 It is preferable to form a, thereby adjusting the depth of the hole 170.

In addition, the laser beam 160 irradiated to the growth substrate 110 may use a laser in the wavelength range of 226nm ~ 900nm, preferably in the case of the UV band laser is strong in intensity and damage to the growth substrate (damage) It is advisable to use lasers in the IR band, as this can occur.

Although not shown, first, a laser beam is applied to a growth substrate to process a plurality of holes to form an uneven pattern, and then a dicing process may be performed for each device size. In this case, in the device separation process using a laser beam, unlike the conventional patterning method using a mask, the uneven pattern can be formed together with the dicing process using a laser beam, thereby reducing the lead time. The unit price can be lowered, and the depth of the hole can be easily adjusted to improve mass productivity and yield.

Subsequently, as illustrated in FIG. 1E, in the light emitting devices separated into respective device sizes, the first conductive electrode 150 and the second conductive electrode 140 are bonded to the sub-mount substrate 180. To form a nitride semiconductor light emitting device having a flip chip structure.

In the nitride semiconductor light emitting device formed as described above, when the light generated in the active layer 133 is reflected by the second conductive electrode 140 to the growth substrate 110 or directly to the growth substrate 110, A large critical angle is provided at the end of the hole 170 formed in the growth substrate 110 to effectively emit light. That is, the end of the hole 170 is formed in a sharp shape to reduce the total reflection of the light, and the deep side of the hole 170 can provide a path through which light can be emitted to extract more light. have.

FIG. 2 is a side cross-sectional view illustrating a nitride semiconductor light emitting device manufactured according to the method of manufacturing the nitride semiconductor light emitting device according to the exemplary embodiment of FIG. 1. Here, the configuration denoted by the same reference numerals as FIG. 1 has the same function, and thus the same description will be omitted.

As shown in FIG. 2, the nitride semiconductor light emitting device includes a buffer layer 120 formed on one surface of the growth substrate 110, a light emitting structure 130 formed on the buffer layer 120, and a first conductive layer formed on the light emitting structure 130. The second and second conductive electrodes 150 and 140 are formed on the other surface of the growth substrate 110, and a plurality of holes 170 are formed by a laser beam. In this case, the nitride semiconductor light emitting device has a flip chip structure in which the first and second conductive electrodes 150 and 140 are bonded to the sub-mount substrate 180.

Here, the growth substrate 110 has one surface on which the light emitting structure 130 is formed, and the other surface opposite to the one surface and on which the hole 170 is formed by irradiation of a laser beam. The growth substrate 110 is an insulating substrate, and may be a substrate made of at least one material of sapphire, AlN, GaN, and SiC.

The hole 170 is formed on the other surface of the growth substrate 110, that is, the light emitting surface, and the light extraction hole 170 formed on the light emitting surface has a sharp shape at its end, that is, The width is narrower toward the end, the bottom surface of the hole 170 is an amorphous surface that is etched by the laser beam irradiation. At this time, by forming the end of the hole 170 in a sharp shape, it is possible to reduce the total reflection due to the difference in refractive index between the growth substrate 110 and the external material (for example, air).

The formation depth of the hole 170 is formed to a depth of 5 to 10% of the thickness of the growth substrate 110, the width and the interval of the hole 170 is formed to a size within 0.3 ~ 10㎛.

When the hole 170 is formed on the other surface of the growth substrate 110 as described above, the growth substrate is angularly generated so that the light emitted from the active layer 133 is reflected directly or on the second conductive electrode 140 to cause total reflection. Even if it is projected to 110, it is transmitted by the hole 170 from the growth substrate 110 to the external air layer or the sealant such as silicon and resin without total reflection. Therefore, due to the difference in refractive index between the outer surface of the growth substrate 110 and the external material, light is totally reflected from the outer surface of the growth substrate 110 into the light emitting structure 130 to prevent the loss of light.

The buffer layer 120 is a layer for buffering lattice mismatch between the growth substrate 110 and the epitaxial layer, and is formed of undoped GaN.

In addition, the light emitting structure 130 is a term referring to a structure formed by sequentially stacking the first conductive nitride layer 131, the active layer 133, and the second conductive nitride layer 135 on the buffer layer 120. The light emitting structure 130 may sequentially form the first conductive nitride layer 131 and the partial region of the first conductive nitride layer 131 on the buffer layer 120. The conductive nitride layer 135 is stacked and formed.

In addition, the first conductive type and the second conductive type electrodes 150 and 140 are formed on the first conductive type nitride layer 131 and the second conductive type nitride layer 135, respectively, and the first conductive type electrode ( 150 is formed in a portion 137 of the first conductive nitride layer exposed by mesa etching in the light emitting structure 130.

The nitride semiconductor light emitting device formed as described above is mounted by bonding the first conductive type and the second conductive type electrodes 150 and 140 to the submount substrate 180 and is electrically connected thereto.

3 is a side cross-sectional view comparing a light extraction path according to a concave-convex pattern consisting of a plurality of holes of a nitride semiconductor light emitting device according to the present invention.

As shown in FIG. 3 (a), in the case of the uneven pattern formed on the substrate 310 by a photolithography and a dry etching method using a general photoresist, all surfaces on which the unevenness is formed are flat and have a low depth. There is a high probability that the light emitted from the active layer is totally reflected.

However, as shown in FIG. 3 (b), in the case of the uneven pattern formed of the plurality of holes formed in the growth substrate 110 by the irradiation of the laser beam, the end of the hole has a sharp surface to reduce the total reflection. And, through the depth of the hole is formed a path through which light can be diverted has more light extraction effect.

4 is a side cross-sectional view showing a nitride semiconductor light emitting device according to another embodiment of the present invention. Here, the nitride semiconductor light emitting device of the present invention is not a flip chip structure but a general horizontal structure.

As shown in FIG. 4, the nitride semiconductor light emitting device includes a buffer layer 420 formed on one surface of the growth substrate 410, a light emitting structure 430 formed on the buffer layer 420, and a first conductive layer formed on the light emitting structure 430. And a plurality of holes 470 formed on the other surface of the growth substrate 410 by irradiation of a laser beam, and having holes 470 formed therein. The reflective metal layer 480 is provided on the other surface of the substrate 410.

Here, the growth substrate 410 has one surface on which the light emitting structure 430 is grown, and the other surface opposite to the one surface and on which the hole 470 is formed by irradiation of a laser beam. The growth substrate 410 is an insulating substrate and may be a substrate made of at least one of sapphire, AlN, GaN, and SiC.

The hole 470 is formed on the other surface of the growth substrate 410, and has a sharp shape at the end thereof, that is, a width narrowing toward the end, and the bottom is irradiated with a laser beam. It is an amorphous surface to be etched. At this time, by forming the end of the hole 470 in a sharp shape, it is possible to reduce the total internal reflection due to the difference in refractive index between the growth substrate 410 and the buffer layer 420. The formation depth of the hole 470 is formed to a depth of 5 to 10% of the thickness of the growth substrate 410, the width and the interval of the hole 470 is formed to a size within 0.3 ~ 10㎛.

When the hole 470 is formed on the other surface of the growth substrate 410 as described above, the light emitted from the active layer 433 may be directly or reflected by the second conductive electrode 440 to grow in an angular range that causes total internal reflection. Even when projected onto the substrate 410, light is scattered by the hole 470 without total reflection, and the scattered light is reflected by the reflective metal layer 480 to travel to the upper surface.

Since the reflective metal layer 480 is formed on the other surface of the growth substrate 410 on which the holes 170 are formed, the reflective area is increased. As a result, the light toward the lower surface of the growth substrate 410 is reached by the hole 470 in a greater amount to the reflective metal layer 480, and the light reaching the reflective metal layer 480 is also reflected by the reflective metal layer 480. Reflected to proceed toward the upper by a high reflectance of the) can improve the light extraction efficiency.

The reflective metal layer 480 is preferably a metal having a reflectance of 90% or more, and selected from the group consisting of Ag, Al, Rh, Ru, Pt, Au, Cu, Pd, Cr, Ni, Co, Ti, In, and Mo. There may be at least one metal layer or alloy layer, more preferably Ag, Al and alloys thereof having high reflectivity.

The buffer layer 420 is a layer for buffering lattice mismatch between the growth substrate 410 and the epitaxial layer, and is formed of undoped GaN.

The light emitting structure 430 may further include an active layer 433 formed on the buffer layer 420, and an active layer 433 formed thereon to expose a portion of the first conductive nitride layer 431. The two conductive nitride layers 435 are sequentially stacked.

The first and second conductive electrodes 450 and 440 are formed on the first conductive nitride layer 431 and the second conductive nitride layer 435, respectively, and the first conductive electrode ( 450 is formed in a portion 437 of the first conductive nitride layer 431 exposed by mesa etching of the light emitting structure 430.

On the other hand, although not shown separately, the nitride semiconductor light emitting device thus formed is mounted by bonding the reflective metal layer 480 to a submount substrate (not shown), and is electrically connected thereto.

As described above, the present invention can form a concave-convex pattern having a desired depth and spacing on the growth substrate through a simpler process such as irradiation of a laser beam, shorten the lead time by simplifying the process without the need for a masking process can do. In addition, the light output can be improved by forming a sharp tip shape and a deep concave-convex pattern.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims, and various forms of substitution and modification within the scope without departing from the technical spirit of the present invention described in the claims. And it will be apparent to those skilled in the art that changes are possible.

1 is a side cross-sectional view for each process for explaining a method for manufacturing a nitride semiconductor light emitting device according to one embodiment of the present invention.

FIG. 2 is a side cross-sectional view illustrating a nitride semiconductor light emitting device manufactured according to the method of manufacturing the nitride semiconductor light emitting device according to the exemplary embodiment of FIG. 1.

3 is a side cross-sectional view comparing a light extraction path according to a concave-convex pattern consisting of a plurality of holes of a nitride semiconductor light emitting device according to the present invention.

4 is a side cross-sectional view showing a nitride semiconductor light emitting device according to another embodiment of the present invention.

Claims (17)

Forming a buffer layer on one surface of the growth substrate; Forming a light emitting structure in which a first conductive nitride layer, an active layer, and a second conductive nitride layer are sequentially stacked on the buffer layer; Mesa etching a portion of the first conductive nitride layer of the light emitting structure to be exposed; Forming a first conductive electrode and a second conductive electrode on a portion of the exposed first conductive nitride layer and the second conductive nitride layer, respectively; And And forming a plurality of holes by irradiating a laser beam on the other surface of the growth substrate. The method of claim 1, The growth substrate is a method of manufacturing a nitride semiconductor light emitting device, characterized in that the substrate made of at least one material of sapphire, AlN, GaN and SiC. The method of claim 1, Irradiating a laser beam to the other surface of the growth substrate to form a plurality of holes, the method of manufacturing a nitride semiconductor light emitting device, characterized in that performed using a laser beam of 226nm ~ 900nm wavelength band. The method of claim 1, Forming a plurality of holes by irradiating a laser beam to the other surface of the growth substrate, manufacturing the nitride semiconductor light emitting device, characterized in that for forming the hole to a depth of 5 to 10% of the thickness of the growth substrate Way. The method of claim 1, The method of manufacturing a nitride semiconductor light emitting device according to claim 1, wherein the forming of the plurality of holes by irradiating a laser beam on the other surface of the growth substrate has a sharp shape at the end of the hole. The method of claim 1, And forming a reflective electrode layer on the second conductive nitride layer after mesa etching so that a portion of the first conductive nitride layer is exposed in the light emitting structure. Manufacturing method. The method of claim 1, After the step of forming a plurality of holes by irradiating a laser beam on the other surface of the growth substrate, forming a reflective metal layer on the other surface of the growth substrate; manufacturing method of a nitride semiconductor light emitting device further comprising . The method according to claim 6 or 7, The reflective metal layer is composed of at least one metal layer selected from the group consisting of Ag, Al, Rh, Ru, Au, Cu, Pd, Cr, Ni, Co, Ti, In and Mo or an alloy layer thereof. Method of manufacturing nitride semiconductor light emitting device. A growth substrate having one surface and the other surface opposite to the one surface, the plurality of holes being formed on the other surface by irradiation of a laser beam; The first conductive nitride layer, the active layer, and the second conductive nitride layer are sequentially stacked on one surface of the growth substrate, and the active layer and the second conductive nitride layer are exposed to expose the first conductive nitride layer. A light emitting structure formed; And And a first conductive type and a second conductive type electrode formed on each of the first conductive type nitride layer and the second conductive type nitride layer. 10. The method of claim 9, The first conductive electrode is nitride semiconductor light emitting device, characterized in that formed on a portion of the first conductive nitride layer exposed by mesa etching of the light emitting structure. 10. The method of claim 9, The growth substrate is a nitride semiconductor light emitting device, characterized in that the substrate made of at least one material of sapphire, AlN, GaN and SiC. 10. The method of claim 9, The hole is a nitride semiconductor light emitting device, characterized in that formed in a depth of 5 to 10% of the thickness of the growth substrate. 10. The method of claim 9, The end of the hole is a nitride semiconductor light emitting device, characterized in that the sharp shape. 10. The method of claim 9, And a buffer layer formed between one surface of the growth substrate and the light emitting structure. 10. The method of claim 9, The nitride semiconductor light emitting device of claim 2, further comprising a reflective electrode layer formed on the second conductive nitride layer. 10. The method of claim 9, And a reflective metal layer formed on the other surface of the growth substrate. The method according to claim 15 or 16, The reflective metal layer is composed of at least one metal layer selected from the group consisting of Ag, Al, Rh, Ru, Au, Cu, Pd, Cr, Ni, Co, Ti, In and Mo or an alloy layer thereof. Nitride semiconductor light emitting device.

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