KR20100058047A - Organic light emitting device, display including the same and manufacturing method of the same - Google Patents

Abstract

PURPOSE: An organic light emitting device, a display device including thereof, and a manufacturing method thereof are provided to improve electron transport capability or electron injecting capability for improving luminous efficiency. CONSTITUTION: An organic light emitting device comprises the following: an anode(11) formed on a substrate(110); a hole transport layer(374) formed on the anode; a light emitting layer(375) formed on the hole transport layer; an electron transport layer(376) formed on the light emitting layer; and a cathode(12) located on the electron transport layer.

Description

Organic Light Emitting Device, Display Including the Same and Manufacturing Method of the Same}

The present invention relates to an organic light emitting device, a display device including the same, and a method of manufacturing the organic light emitting device.

The organic light emitting device forms an organic light emitting layer between two electrodes, and injects electrons and holes from the two electrodes into the organic light emitting layer, respectively, to generate excitons according to the combination of electrons and holes, This device uses the principle that light is generated when the excitons fall from the excited state to the ground state.

On the other hand, the organic light emitting diode display including the organic light emitting diode is a self-emission type, and thus, an additional light source is not only advantageous in terms of power consumption, but also excellent in response speed, viewing angle, and contrast ratio.

The organic light emitting device may have a structure in addition to the organic light emitting layer (auxiliary layer) for improving the light emitting efficiency of the light emitting layer. Since the driving voltage, the light emission efficiency, the lifespan, and the like of the organic light emitting diode display vary depending on the compound used in the auxiliary layer, research on such a compound is being actively conducted.

An object of this invention is to improve the drive voltage, luminous efficiency, and lifetime of an organic light emitting element.

The above and other objects of the present invention can be achieved by the present invention described below.

An organic light emitting diode according to an embodiment of the present invention is an anode formed on a substrate, a hole transport layer formed on the anode, a light emitting layer formed on the hole transport layer, formed on the light emitting layer, Or an electron transport layer containing a compound represented by the formula (2), and a cathode (cathode) formed on the electron transport layer.

[Formula 1]

[Formula 2]

(R1 to R10 are the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2-C30 is a heteroaryl group, L is a compound containing an aryl group or heterocycloalkyl group, n and m are each an integer of 0 or 1)

The method may further include a hole injection layer formed between the anode and the hole transport layer.

The method may further include an electron injection layer formed between the electron transport layer and the cathode.

The method may further include a hole blocking layer formed between the emission layer and the electron injection layer.

The electron injection layer and the hole blocking layer may include a compound represented by Formula 1 or Formula 2.

The electron injection layer, the electron transport layer and the hole blocking layer may include an organic metal complex, an organic ion salt, a metal ion, or a mixture thereof.

In the compound represented by Chemical Formula 1 or Chemical Formula 2, L may be selected from at least one compound group represented by Chemical Formula 3.

[Formula 3]

(R 'is the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted) C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2 -Heteroaryl group of C30)

An organic light emitting diode display according to an exemplary embodiment of the present invention includes a switching thin film transistor connected to a first signal line and a second signal line crossing each other, the first signal line and the second signal line, and a driving connected to the switching thin film transistor. An organic film covering the thin film transistor, the first signal line, the second signal line, the switching thin film transistor, and the driving thin film transistor, a pixel electrode formed on the organic film and connected to the driving thin film transistor, and formed on the organic film. A light emitting member including a pixel defining layer surrounding the pixel electrode, an electron transport layer formed on the pixel electrode and including the compound represented by Formula 1 or Formula 2, and a common electrode formed on the light emitting member It includes.

The light emitting member may include an electron injection layer.

The light emitting member may include a hole blocking layer.

The electron injection layer and the hole blocking layer may include a compound represented by Formula 1 or Formula 2.

An organic light emitting diode according to an exemplary embodiment of the present invention includes a first electrode positioned on a substrate, an organic layer disposed on the first electrode, and including an compound represented by Formula 1 or Formula 2, and positioned on the organic layer. And a second electrode.

The organic layer may include at least one of an electron transport layer, a light emitting layer, an electron injection layer, and a hole blocking layer.

The organic layer may include an organometallic complex, an organic ion salt, a metal ion, or a mixture thereof.

Method of manufacturing an organic light emitting device according to an embodiment of the present invention comprises the steps of forming an organic layer comprising a compound represented by the formula (1) or (2) on the first electrode, and forming a second electrode on the organic layer Steps.

According to one embodiment of the present invention, the driving voltage is reduced, the light emission efficiency is improved, and the lifespan is improved by suppressing crystallization of the organic light emitting layer by improving the electron transport ability or the electron injection ability of the organic light emitting device.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same reference numerals are used for the same or similar components throughout the specification. In the case of publicly known technologies, a detailed description thereof will be omitted.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the other hand, when a part is "just above" another part, there is no other part in the middle. Conversely, when a part of a layer, film, region, plate, etc. is "below" another part, this includes not only the other part "below" but also another part in the middle. On the other hand, when a part is "just below" another part, it means that there is no other part in the middle.

Next, an organic light emitting diode according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is a schematic view of an organic light emitting device according to an embodiment of the present invention.

An anode 11 is formed on the substrate 110. The anode 11 is made of a material having a high work function to enable the injection of holes, and specific examples thereof include indium tin oxide (ITO), a transparent oxide of indium oxide, and the like.

The organic light emitting member 370 is formed on the anode 11. The organic light emitting member 370 includes a hole transport layer (HTL) 374, an emission layer (EL) 375, and an electron transport layer (ETL) 376.

The hole transporting layer 374 and the electron transporting layer 376 are organic layers for balancing electrons and holes, and the light emitting layer 375 is inherent in any one of primary colors such as three primary colors of red, green, and blue. It consists of a high molecular material or a low molecular material or a mixture thereof. The hole transport layer 374 may include a p-type semiconductor.

The electron transport layer 376 includes a compound represented by the following Chemical Formula 1 or the following Chemical Formula 2.

[Formula 1]

[Formula 2]

In Formula 1 to Formula 2, R1 to R10 are the same as or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cyclo Alkyl group, substituted or unsubstituted C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group , A substituted or unsubstituted C2-C30 heteroaryl group, L is a compound containing an aryl group or heterocycloalkyl group, n and m are each an integer of 0 or 1.

Specific examples of the L are compounds represented by the following formula (3).

(3)

R 'is the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2 -C30 heteroaryl group.

The electron transport layer 376 may further include an organometallic complex, an organic ionic compound, a metal ionic compound, an n-type semiconductor, or a mixture thereof in addition to the compound represented by Formula 1 or Formula 2.

In addition, the compound represented by Formula 1 or Formula 2 may be included in the emission layer 375 in addition to the electron transport layer 376.

Organic films such as the hole transport layer 374, the light emitting layer 375, and the electron transport layer 376 may be formed by a vacuum deposition method or a solution coating method depending on the manufacturing method. Solution coating methods, such as inkjet printing, screen printing, and spin coating, are easy to manufacture, inexpensive to manufacture, and provide a relatively better resolution than shadow masks. In order to manufacture an organic film containing various compounds, a method such as co-deposition can be used.

A cathode 12 is formed on the electron transport layer 376. The cathode 12 is made of a material having a small work function to facilitate electron injection into the electron transport layer 376. For example, metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, gold, silver, platinum, nickel, copper, tungsten, tin, lead, cesium, barium, and alloys thereof , Multilayer structure materials such as LiF / Al, LiO 2 / Al, LiF / Ca, LiF / Al, and BaF 2 / Ca, and the like.

Next, an organic light emitting diode according to another exemplary embodiment of the present invention will be described in detail with reference to FIG. 2.

2 is a schematic view of an organic light emitting device according to another embodiment of the present invention. A hole injecting layer 373 is formed between the anode 11 and the hole transport layer 374, and an electron injecting layer 377 between the cathode 12 and the electron transport layer 376. ) And a hole blocking layer 378 is formed between the light emitting layer 375 and the electron transport layer 376, and is the same as the organic light emitting device of FIG. The hole injection layer 373 and the electron injection layer 377 are for enhancing the injection of electrons and holes. In addition, since the compound represented by Formula 2 has both electron transporting ability and electron injection ability, the electron transporting layer 376 and the electron injection layer 377 may be formed as one layer in the organic light emitting device of FIG. In this case, the process cost is reduced.

In this case, the electron injection layer 377 or the hole blocking layer 378 may include a compound represented by Formula 1 or Formula 2. In addition, the hole blocking layer 378 may be omitted.

Next, an organic light emitting diode display according to another exemplary embodiment of the present invention will be described in detail with reference to FIG. 3.

3 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 3, the organic light emitting diode display according to the present exemplary embodiment includes a plurality of signal lines 121, 171, and 172, and a plurality of pixels PX connected to them and arranged in a substantially matrix form. do.

The signal line includes a plurality of gate lines 121 for transmitting a gate signal (or scan signal), a plurality of data lines 171 for transmitting a data signal, and a plurality of driving voltage lines 172 for transmitting a driving voltage. The gate lines 121 extend substantially in the row direction, and are substantially parallel to each other, and the data line 171 and the driving voltage line 172 extend substantially in the column direction, and are substantially parallel to each other.

Each pixel PX includes a switching thin film transistor (Qs), a driving thin film transistor (Qd), a storage capacitor (Cst), and an organic light emitting diode. , OLED) (LD).

The switching thin film transistor Qs has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the gate line 121, the input terminal is connected to the data line 171, and the output terminal is a driving thin film. It is connected to transistor Qd. The switching thin film transistor Qs transmits a data signal applied to the data line 171 to the driving thin film transistor Qd in response to a scan signal applied to the gate line 121.

The driving thin film transistor Qd also has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the switching thin film transistor Qs, the input terminal is connected to the driving voltage line 172, and the output terminal is It is connected to the organic light emitting diode LD. The driving thin film transistor Qd flows an output current ILD whose magnitude varies depending on the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving thin film transistor Qd. The capacitor Cst charges a data signal applied to the control terminal of the driving thin film transistor Qd and maintains it even after the switching thin film transistor Qs is turned off.

The organic light emitting diode LD includes an organic light emitting diode according to an exemplary embodiment, and includes an anode connected to an output terminal of the driving thin film transistor Qd and a cathode connected to a common voltage Vss. has a cathode The organic light emitting diode LD displays an image by emitting light having a different intensity depending on the output current ILD of the driving thin film transistor Qd.

The switching thin film transistor Qs and the driving thin film transistor Qd are n-channel field effect transistors (FETs). However, at least one of the switching thin film transistor Qs and the driving thin film transistor Qd may be a p-channel field effect transistor. In addition, the connection relationship between the thin film transistors Qs and Qd, the capacitor Cst, and the organic light emitting diode LD may be changed.

Next, the detailed structure of the organic light emitting diode display illustrated in FIG. 3 will be described in detail with reference to FIGS. 4 and 5 along with FIG. 3.

4 is a layout view of an organic light emitting diode display according to an exemplary embodiment, and FIG. 5 is a cross-sectional view of the organic light emitting diode display of FIG. 4 taken along line III-III.

An insulating substrate 110 made of transparent glass or plastic is prepared. At this time, the insulating substrate 110 may be pre-compaction. The electrothermal treatment is to preheat the substrate at about 500 to 800 ° C. so that the substrate is pre-expanded and shrunk by heat.

A gate line 121 including a switching control electrode 124a and a driving control electrode 124b are formed on the insulating substrate 110.

The gate line 121 extends in one direction of the substrate and includes a switching control electrode 124a extending upward and an end portion 129 for connecting to an external driving circuit.

The driving control electrode 124b is separated from the gate line 121 and includes a sustain electrode 127 extending upwardly.

The gate line 121 and the driving control electrode 124b include a molybdenum-containing metal including molybdenum (Mo) or a molybdenum alloy, a chromium-containing metal including chromium (Cr) or a chromium alloy, titanium (Ti) or a titanium alloy. Refractory metal or aluminum (Al), copper (Cu) Or a low resistance metal such as silver (Ag).

The driving gate insulating layer 140p is formed on the gate line 121 and the driving control electrode 124b. The driving gate insulating layer 140p may be made of silicon nitride (SiNx) or silicon oxide (SiO 2) and may have a thickness of about 500 to 2000 μm.

The driving semiconductor 154b is formed on the driving gate insulating layer 140p at a position overlapping with the driving control electrode 124b. The driving semiconductor 154b is island type and is made of crystalline silicon such as microcrystalline silicon or polycrystalline silicon.

The driving semiconductor 154b includes a doped region 155b and an undoped region 156b. The doped region 155b is positioned on both sides of the undoped region 156b, and the crystalline silicon is doped with p-type impurities such as boron (B) or n-type impurities such as phosphorous (P). . The undoped region 156b is made of an intrinsic semiconductor that is not doped with impurities, and a channel of the driving thin film transistor is formed.

The driving voltage line 172 including the driving input electrode 173b and the driving output electrode 175b are formed on the driving semiconductor 154b and the driving gate insulating layer 140p.

The driving voltage line 172 mainly extends in the vertical direction and crosses the gate line 121 to transfer the driving voltage. The driving voltage line 172 includes a driving input electrode 173b extending over the driving semiconductor 154b, and a portion of the driving voltage line 172 overlaps the storage electrode 127 of the driving control electrode 124b to form a storage capacitor ( storage capacitor, Cst).

The driving output electrode 175b is separated from the driving voltage line 172 and is island-shaped.

The driving input electrode 173b and the driving output electrode 175b are respectively positioned on the doped region 155b of the driving semiconductor 154b and face each other with respect to the undoped region 156b of the driving semiconductor 154b. At this time, the driving input electrode 173b and the undoped region 156b, the driving output electrode 175b, and the undoped region 156b are separated from each other by a predetermined distance. The offset between the driving input electrode 173b and the undoped region 156b or between the driving output electrode 175b and the undoped region 156b is offset.

The driving voltage line 172 and the driving output electrode 175b may be made of the above-mentioned refractory metal or low-resistance metal such as aluminum (Al), copper (Cu), or silver (Ag), and in addition to a single layer, molybdenum (Mo) It may be formed of a multilayer such as / aluminum (Al) / molybdenum (Mo). In the case of multiple films, molybdenum (Mo) / aluminum (Al) / molybdenum (Mo) may have a thickness of about 300 kW, about 2500 kW and about 1000 kW, respectively.

The switching gate insulating layer 140q is formed on the driving voltage line 172 and the driving output electrode 175b. The switching gate insulating layer 140q may be made of silicon nitride (SiNx) and has a thickness of about 3000 to 4500 Å.

The switching semiconductor 154a is formed on the switching gate insulating layer 140q at a position overlapping the switching control electrode 124a. The switching semiconductor 154a may be made of amorphous silicon and has a thickness of about 1500 to 2500 GPa.

A pair of ohmic contacts 163a and 165a are formed on the switching semiconductor 154a. The ohmic contacts 163a and 165a may be doped with amorphous silicon or n-type or p-type impurities, and have a thickness of about 500 GPa.

The data line 171 including the switching input electrode 173a and the switching output electrode 175a are formed on the ohmic contacts 163a and 165a and the switching gate insulating layer 140q.

The data line 171 mainly extends in the vertical direction to cross the gate line 121 and transmit a data signal. A portion of the data line 171 forms a switching input electrode 173a overlapping the switching semiconductor 154a.

The switching output electrode 175a faces the switching input electrode 173a over the switching semiconductor 154a.

The data line 171 and the switching output electrode 175a may be made of the above-mentioned refractory metal or low-resistance metal such as aluminum (Al), copper (Cu), or silver (Ag), and in addition to a single layer, molybdenum (Mo) It may be formed of a multilayer such as / aluminum (Al) / molybdenum (Mo). In the case of multiple films, molybdenum (Mo) / aluminum (Al) / molybdenum (Mo) may have a thickness of about 300 kW, 2500 kW and 1000 kW, respectively.

A passivation layer 180 is formed on the data line 171 and the switching output electrode 175a. The passivation layer 180 is made of an organic material such as polyacrylic having excellent planarization characteristics, and may have a thickness of about 2000 μm to 2 μm.

In the passivation layer 180, contact holes 183a and 182 exposing the switching output electrode 175a and the end portion 179 of the data line 171 are formed, respectively, and in the passivation layer 180 and the switching gate insulating layer 140q. A contact hole 185b exposing the driving output electrode 175b is formed, and the driving control electrode 124b and the gate line 121 are respectively formed in the passivation layer 180, the switching gate insulating layer 140q, and the driving gate insulating layer 140p. Contact holes 183b and 181 are formed to expose the end portions 129 of the respective portions.

The pixel electrode 191, the connection member 85, and the contact auxiliary members 81 and 82 are formed on the passivation layer 180.

The pixel electrode 191 is electrically connected to the driving output electrode 175b through the contact hole 185b and may be made of a transparent conductor such as ITO or IZO.

The connecting member 85 electrically connects the switching output electrode 175a and the drive control electrode 124b through the contact holes 183a and 183b.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 or the end portion 179 of the data line 171 through the contact holes 181 and 182. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portion 129 of the gate line 121 or the end portion 179 of the data line 171 and the external device.

The pixel defining layer 361 is formed on the passivation layer 180 and the connection member 85. The pixel defining layer 361 surrounds the circumference of the pixel electrode 191 like a bank. The pixel defining layer 361 may be formed of an organic insulating material.

The light emitting member 370 is formed on the pixel electrode 191. The light emitting member 370 may include the hole injection layer 373, the hole transport layer 374, the light emitting layer 375, the hole blocking layer 378, the electron transport layer 376, and the organic light emitting diode according to the exemplary embodiment. The electron injection layer 377 can be included suitably.

The common electrode 270 is formed on the light emitting member 370. The common electrode 270 is formed on the entire surface of the substrate and is an opaque conductor such as gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W), or an alloy thereof. Can be made.

The common electrode 270 pairs with the pixel electrode 191 to send a current to the light emitting member 370. The pixel electrode 191, the organic light emitting member 370, and the common electrode 270 form a light emitting diode LD, and the pixel electrode 191 is an anode and the common electrode 270 is a cathode. In contrast, the pixel electrode 191 becomes a cathode and the common electrode 270 becomes an anode.

Meanwhile, the interlayer structure or the arrangement structure of the switching thin film transistor and the driving thin film transistor may be modified in various forms in addition to those exemplified above.

Next, an organic light emitting diode according to another exemplary embodiment of the present invention will be described in detail.

An organic layer including the compound represented by Formula 1 or Formula 2 may be formed between the anode 11 and the cathode 12. In this case, the organic layer may include at least one of the electron transport layer 375, the light emitting layer 375, the electron injection layer 377, and the hole blocking layer 378. For example, only the electron transport layer 375 may be included, and the electron transport layer 375, the light emitting layer 375, and the electron injection layer 377 may be included. The organic layer may also comprise an organometallic complex, an organic ion salt, a metal ion, or a mixture thereof.

Next, a method of manufacturing an organic light emitting diode according to still another embodiment of the present invention will be described in detail.

An anode 11 or cathode 12 is formed over the substrate. Next, an organic layer including the compound represented by Formula 1 or Formula 2 is formed. Next, an electrode opposite to the electrode under the organic layer of the anode 11 or the cathode 12 is formed on the organic layer. As the method of forming the organic layer and the electrode including the electron transport layer, the light emitting layer, the electron injection layer, the hole blocking layer, and the like, conventional methods such as deposition, co-deposition, inkjet printing, spin coating, and photolithography may be used.

Hereinafter, the present invention will be described in more detail with reference to Examples, but the following Examples are only preferred examples of the present invention, and the present invention is not limited to the following Examples.

Example 1

The anode was cut into 50 mm x 50 mm x 0.7 mm sized 15 Ω / cm2 (1000 Å) ITO glass substrates, sonicated for 15 minutes in acetone isopropyl alcohol and pure water, followed by UV ozone cleaning for 30 minutes. It was. Compound 4,4 ', 4 "-tris (N, N-diphenylamino) triphenylamine (mTDATA) was vacuum deposited on the ITO glass substrate to form a hole injection layer having a thickness of 600 Å, followed by a hole injection layer. Compound N, N'-di (naphthalen-1-yl) -N, N'-diphenyl-bendidine (NPB) was vacuum deposited to form a 300 층 thick hole transport layer, and compound 2-t on top of the hole transport layer -Butyl-9,10-di- (2-naphthyl) anthracene (TBADN) and 4,4'-bis [2- {4- (N, N-diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) Was vacuum deposited at a weight ratio of 100: 5 to form a light emitting layer having a thickness of 300., Followed by depositing 9,10-di (thiazolo [5,4-b] pyridin-5-yl) anthracene on top of the light emitting layer. An electron transport layer having a thickness of VII was formed LiF 6 VII (electron injection layer) and Al 1500 Å (cathode) were sequentially vacuum deposited on the electron transport layer to manufacture an organic light emitting device.

Example 2

9,10-bis (4- (thiazolo [5,4-b] pyridin-5-yl) instead of 9,10-di (thiazolo [5,4-b] pyridin-5-yl) anthracene as the material for the electron transport layer Except for using phenyl) anthracene was carried out in the same manner as in Example 1.

Example 3

(2- (8- (9,10-diphenylanthracen-2-yl) -1,10-phenanthrolin instead of 9,10-di (thiazolo [5,4-b] pyridin-5-yl) anthracene as an electron transporting material -3-yl) cyclopenta-2,4-dienyl) lithium was used, and the same method as in Example 1 was carried out except that the cathode was directly vacuum deposited on the electron transport layer without depositing the electron injection layer.

Example 4

As a material for the electron transport layer, instead of (2- (8- (9,10-diphenylanthracen-2-yl) -1,10-phenanthrolin-3-yl) cyclopenta-2,4-dienyl) lithium (2- (8- ( 9,10-diphenylanthracen-2-yl) -1,10-phenanthrolin-3-yl) cyclopenta-2,4-dienyl) lithium was carried out in the same manner as in Example 3 except that.

Comparative Example 1

It was carried out in the same manner as in Example 1, except that Alq3 was used instead of 9,10-di (thiazolo [5,4-b] pyridin-5-yl) anthracene as the material of the electron transport layer.

The driving voltage, current density, luminous efficiency, and luminance half life of the organic light emitting diodes manufactured in Examples 1 to 4 and Comparative Example 1 are measured as shown in Table 1 below.

TABLE 1

Driving voltage
(V) Current density
(mA / cm2) Luminous efficiency
(cd / A) Luminance Half Life
(hr) Example 1 3.0 13.0 8.4 1250 Example 2 3.3 12.5 8.6 1300 Example 3 3.5 12.6 8.8 1180 Example 4 3.3 13.3 9.1 1130 Comparative Example 1 5.6 9.8 7.5 950

As can be seen from the results of Examples 1 and 2, when the compound represented by Formula 1 is used as the electron transporting layer, the driving voltage is smaller and the current density is larger than that of Comparative Example 1 using Alq3. It can be seen that the electron transport ability of the compound represented is better. It can also be seen that the luminous efficiency is greater and the luminance half life is longer.

As can be seen from the results of Examples 3 and 4, even when the compound represented by the formula (2) is used as the electron transport layer and the electron injection layer is not formed separately, the driving voltage is lower than that of Comparative Example 1 and the current density is lower. You can see that it is large. In addition, the luminous efficiency is large, and the luminance half life is long. In addition, the process cost is reduced because the electron injection layer is not used.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

1 is a schematic view of an organic light emitting device according to an embodiment of the present invention.

2 is a schematic view of an organic light emitting device according to another embodiment of the present invention.

3 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

4 is a layout view of an organic light emitting diode display according to an exemplary embodiment.

5 is a cross-sectional view of the organic light emitting diode display of FIG. 4 taken along a line V-V.

Explanation of symbols on the main parts of the drawings

110: substrate 11: anode

12: cathode 370: light emitting member

373: hole injection layer 374: hole transport layer

375: light emitting layer 376: electron transport layer

377: electron injection layer 378: hole blocking layer

Claims (24)

An anode formed on the substrate, A hole transport layer formed on the anode, A light emitting layer formed on the hole transport layer, An electron transport layer formed on the emission layer and including a compound represented by Formula 1 or Formula 2 below; [Formula 1]

[Formula 2]

(R1 to R10 are the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or Unsubstituted C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted A substituted C2-C30 heteroaryl group, L is a compound containing an aryl group or heterocycloalkyl group, n and m are each an integer of 0 or 1) A cathode located on the electron transport layer Organic light emitting device comprising a. In claim 1, And a hole injection layer formed between the anode and the hole transport layer. In claim 2, And an electron injection layer formed between the electron transport layer and the cathode. 4. The method of claim 3, The electron injection layer is an organic light emitting device comprising a compound represented by the formula (1) or (2). In claim 4, The electron injection layer includes an organic metal complex, an organic ion salt, a metal ion, or a mixture thereof. 4. The method of claim 3, The organic light emitting device further comprises a hole blocking layer formed between the light emitting layer and the electron injection layer. In claim 6, The hole blocking layer is an organic light emitting device comprising the compound represented by the formula (1) or (2). In claim 7, The hole blocking layer includes an organic metal complex, an organic ion salt, a metal ion, or a mixture thereof. In claim 1, The light emitting layer is an organic light emitting device comprising a compound represented by the formula (1) or (2). In claim 1, In the compound represented by Formula 1 or Formula 2, L is at least one selected from the group of compounds represented by the formula (3). [Formula 3]

(R 'is the same or different from each other and is hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted, respectively) C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2 -Heteroaryl group of C30) In claim 1, The electron transport layer includes an organic metal complex, an organic ion salt, a metal ion, or a mixture thereof. A first signal line and a second signal line crossing each other, A switching thin film transistor connected to the first signal line and the second signal line, A driving thin film transistor connected to the switching thin film transistor, An organic layer covering the first signal line, the second signal line, the switching thin film transistor, and the driving thin film transistor; A pixel electrode formed on the organic layer and connected to the driving thin film transistor, A pixel defining layer formed on the organic layer and surrounding the pixel electrode; A light emitting member formed on the pixel electrode and including an electron transporting layer including a compound represented by the following Chemical Formula 1 or the following Chemical Formula 2, and [Formula 1]

[Formula 2]

(R1 to R10 are the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2-C30 is a heteroaryl group, L is a compound containing an aryl group or heterocycloalkyl group, n and m are each an integer of 0 or 1) Common electrode formed on the light emitting member An organic light emitting display device comprising a. In claim 12, The light emitting member includes an electron injection layer. The method of claim 13, The electron injection layer includes the compound represented by Formula 1 or Formula 2. In the thirteenth, The light emitting member includes a hole blocking layer. 16. The method of claim 15, The electron injection layer includes the compound represented by Formula 1 or Formula 2. A first electrode on the substrate, Located on the first electrode, an organic layer comprising a compound represented by the following formula (1) or (2), and [Formula 1]

[Formula 2]

(R1 to R10 are the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2-C30 is a heteroaryl group, L is a compound containing an aryl group or heterocycloalkyl group, n and m are each an integer of 0 or 1) A second electrode on the organic layer An organic light emitting device comprising a. The method of claim 17, The organic layer includes at least one of an electron transport layer, a light emitting layer, an electron injection layer, and a hole blocking layer. The method of claim 17, In the compound represented by Formula 1 or Formula 2, L is at least one selected from the group of compounds represented by the formula (3). [Formula 3]

(R 'is the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted) C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2 -Heteroaryl group of C30) The method of claim 18, The organic layer includes an organic metal complex, an organic ion salt, a metal ion, or a mixture thereof. Forming a first electrode on the substrate, Forming an organic layer including the compound represented by Chemical Formula 1 or Chemical Formula 2 on the first electrode, and [Formula 1]

(2)

(R1 to R10 are the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2-C30 is a heteroaryl group, L is a compound containing an aryl group or heterocycloalkyl group, n and m are each an integer of 0 or 1) Forming a second electrode on the organic layer Method for manufacturing an organic light emitting device comprising a. The method of claim 21, The organic layer may include at least one of an electron transport layer, a light emitting layer, an electron injection layer, and a hole blocking layer. The method of claim 21, In the compound represented by Formula 1 or Formula 2, L is at least one selected from the group of compounds represented by the formula (3). [Formula 3]

(R 'is the same or different from each other, and each hydrogen, halogen, cyano group, hydroxyl group, substituted or unsubstituted C1-C20 alkyl group, substituted or unsubstituted C3-C20 cycloalkyl group, substituted or unsubstituted) C5-C30 heterocycloalkyl group, substituted or unsubstituted C1-C20 alkoxy group, substituted or unsubstituted C6-C30 aryl group, substituted or unsubstituted C6-C30 arylalkyl group, substituted or unsubstituted C2 -Heteroaryl group of C30) The method of claim 21, The organic layer is an organic light emitting device manufacturing method comprising an organic metal complex, an organic ion salt, a metal ion, or a mixture thereof.

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