KR20100050328A - Image sensor and fabricating method thereof - Google Patents
Image sensor and fabricating method thereof Download PDFInfo
- Publication number
- KR20100050328A KR20100050328A KR1020080109559A KR20080109559A KR20100050328A KR 20100050328 A KR20100050328 A KR 20100050328A KR 1020080109559 A KR1020080109559 A KR 1020080109559A KR 20080109559 A KR20080109559 A KR 20080109559A KR 20100050328 A KR20100050328 A KR 20100050328A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- via hole
- forming
- insulating film
- sensing unit
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 33
- 239000010410 layer Substances 0.000 claims abstract description 185
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000011229 interlayer Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Embodiments relate to an image sensor and a method of manufacturing the same. In another embodiment, a method of manufacturing an image sensor includes: forming a wiring and an interlayer insulating layer on a semiconductor substrate, bonding an image sensing unit including a first doping layer and a second doping layer on the interlayer insulating layer, and the image. Forming a via hole through the sensing unit and the interlayer insulating layer to expose the wiring, forming an insulating layer pattern covering at least a portion of sidewalls of the second doped layer and the first doped layer in the via hole; Forming a barrier layer and a contact plug in the via hole to be insulated from the second doped layer. In the embodiment, while employing the vertical image sensing unit, the first doping layer and the second doping layer of the image sensing unit may be electrically separated to prevent generation of leakage current.
Description
Embodiments relate to an image sensor and a method of manufacturing the same.
An image sensor is a semiconductor device that converts an optical image into an electrical signal, and is classified into a charge coupled device (CCD) image sensor and a complementary metal oxide silicon (CMOS) image sensor (CIS). do.
The CMOS image sensor is a structure in which a photo diode area for receiving a light signal and converting it into an electric signal and a transistor area for processing the electric signal are horizontally disposed.
Such a horizontal image sensor is limited in that the photodiode region and the transistor region are horizontally disposed on the semiconductor substrate to extend the light sensing portion (commonly referred to as "Fill Factor") under a limited area.
As an alternative to overcome this problem, the circuitry is formed on a silicon substrate by depositing a photodiode with amorphous silicon or by using wafer-to-wafer bonding. Attempts have been made to form photodiodes on the lead-out circuit (hereinafter referred to as "three-dimensional image sensor"). The photodiode and the circuit area are connected through a metal line.
The silicon substrate on which the photodiode is formed is formed by vertically stacking a P layer, an intrinsic layer, and an N layer, and the P layer serves to ground the electrons in the pixel to ground by receiving light to retake an image. The layer takes an image, ie receives light and sends electrons to the lower lead-out circuit to image the electrons in the pixel. If the P layer and the N layer are not electrically separated from each other, and electrons remaining in the P layer are transferred to the N layer to generate a leakage current, there is a problem of poor image quality of the CMOS image sensor.
The embodiment provides a method of manufacturing an image sensor that employs a vertical image sensing unit and electrically separates a first doping layer and a second doping layer from an image sensing unit to prevent leakage current.
In an embodiment, the first and second doped layers may be electrically insulated from each other by forming an image sensing unit on the readout circuit and forming vias of the image sensing unit for electrically connecting the image sensing unit and the readout circuit. An image sensor having a via structure is provided.
The image sensor according to the embodiment, an image sensing unit including a wiring and an interlayer insulating layer formed on a semiconductor substrate, an ohmic contact layer bonded on the interlayer insulating layer, a first doped layer and a second doped layer, the image sensing And a contact plug formed in the via hole formed through the interlayer and interlayer insulating layers, and an insulating layer pattern formed between at least a portion of sidewalls of the second doped layer and the first doped layer and the contact plug.
In another embodiment, a method of manufacturing an image sensor includes: forming a wiring and an interlayer insulating layer on a semiconductor substrate, bonding an image sensing unit including a first doping layer and a second doping layer on the interlayer insulating layer, and the image. Forming a via hole through the sensing unit and the interlayer insulating layer to expose the wiring, forming an insulating layer pattern covering at least a portion of sidewalls of the second doped layer and the first doped layer in the via hole; Forming a barrier layer and a contact plug in the via hole to be insulated from the second doped layer.
According to the method of manufacturing the image sensor according to the embodiment, the fill factor may be approached to 100% by employing a circuitry and a vertical integration of the image sensing unit.
The image sensor according to the embodiment employs a deep via hole and a metal plug in which the first doping layer and the second doping layer of the image sensing unit are electrically separated, thereby transferring the electrons of the image sensing unit to the readout circuit to output the signal of the photodiode. (Signal Out Put) can be made normally. That is, since the metal plug is electrically connected only to the n-type layer of the image sensing unit, the n-type layer and the p-type layer are electrically separated, thereby preventing leakage current and improving image quality.
A method of manufacturing an image sensor according to an embodiment will be described in detail with reference to the accompanying drawings.
In the description of the embodiments, where described as being formed "on / over" of each layer, the on / over may be directly or via another layer. (indirectly) includes everything formed.
In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.
The embodiment is not limited to the CMOS image sensor, and may be applied to all image sensors requiring a photodiode such as a CCD image sensor.
1 to 3 are cross-sectional views illustrating a method of manufacturing a semiconductor substrate including a readout circuit unit of an image sensor according to an embodiment.
Referring to FIG. 1, a
The
The forming of the lead-out
For example, the
According to the embodiment, the device can be designed such that there is a voltage difference between the source / drain across the transfer transistor Tx, thereby enabling full dumping of the photo charge. Accordingly, as the photo charge generated in the photodiode is dumped into the floating diffusion region, the output image sensitivity may be increased.
That is, by forming an
Hereinafter, the dumping structure of the photocharge of the embodiment will be described in detail with reference to FIGS. 1 and 2.
Unlike the floating diffusion (FD) 131 node, which is an N + function in the embodiment, the P / N /
Specifically, the electrons generated by the photodiode 205 are moved to the
Since the maximum voltage value of the P0 / N- / P-
That is, in the embodiment, the reason why the P0 / N- / Pwell junction is formed instead of the N + / Pwell junction in the silicon sub, which is the
Therefore, unlike the case where the photodiode is simply connected with N + junction in the technology of a general image sensor, according to the embodiment, problems such as degradation of saturation and degradation of sensitivity can be avoided.
Next, according to the embodiment, the first
To this end, the embodiment may form an N + doped region as the first
Meanwhile, in order to minimize the first
To this end, the embodiment may proceed with a plug implant after etching the
That is, the reason for N + doping locally only in the contact forming part as in the embodiment is to facilitate the formation of ohmic contact while minimizing the dark signal. As in the prior art, when N + Doping the entire Tx Source part, the dark signal may increase due to the substrate surface dangling bond.
3 shows another structure for the readout circuit. As shown in FIG. 3, a first
Referring to FIG. 3, an N +
In addition, when the N +
That is, the
Then, the E-Field of the surface of the
Referring back to FIG. 1, an
4 to 11 are cross-sectional views illustrating a method of manufacturing a semiconductor substrate including an image sensing unit of an image sensor according to an embodiment.
Referring to FIG. 4, an
For reference, the
For example, the
In an embodiment, the first doped
Next, the
That is, since the
In addition, the
Referring to FIG. 5, a via
Although not shown, the via
The via
Referring to FIG. 6, the
Referring to FIG. 7, the
Here, the
When the
For example, when the depth of the via
Referring to FIG. 8, an insulating
The insulating
The insulating
The insulating
The insulating
9, a
The
The
Thereafter, reactive ion etching is performed using the
The reactive ion etching is anisotropic etching, the etching of the insulating
Referring to FIG. 10, the
Accordingly, an insulating
The insulating
Thereafter, the
For example, the
The
The
The
The
During the planarization process, the insulating
In this case, the
Since the
Subsequently, although not described, a pixel trench isolation forming process may be further performed to classify the photodiode region for each pixel.
In addition, the second doped
In addition, a color filter (not shown) and a micro lens (not shown) may be formed on the
As described above, in the image sensor according to the exemplary embodiment, since the first doped
Therefore, since the contact plug for transferring the photoelectrons generated by the
The above-described embodiments are not limited to the above-described embodiments and drawings, and it is common in the technical field to which the present embodiments belong that various changes, modifications, and changes can be made without departing from the technical spirit of the present embodiments. It will be obvious to those who have
1 to 3 are cross-sectional views illustrating a method of manufacturing a semiconductor substrate including a readout circuit unit of an image sensor according to an embodiment.
4 to 11 are cross-sectional views illustrating a method of manufacturing a semiconductor substrate including an image sensing unit of an image sensor according to an embodiment.
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080109559A KR101038809B1 (en) | 2008-11-05 | 2008-11-05 | image sensor and fabricating method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080109559A KR101038809B1 (en) | 2008-11-05 | 2008-11-05 | image sensor and fabricating method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100050328A true KR20100050328A (en) | 2010-05-13 |
KR101038809B1 KR101038809B1 (en) | 2011-06-03 |
Family
ID=42276485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080109559A KR101038809B1 (en) | 2008-11-05 | 2008-11-05 | image sensor and fabricating method thereof |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101038809B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016204771A1 (en) * | 2015-06-18 | 2016-12-22 | Intel Corporation | Bottom-up fill (buf) of metal features for semiconductor structures |
WO2023237362A1 (en) * | 2022-06-10 | 2023-12-14 | International Business Machines Corporation | Through-substrate via skipping a backside metal level for power delivery |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4483442B2 (en) | 2004-07-13 | 2010-06-16 | ソニー株式会社 | Solid-state imaging device, solid-state imaging device, and method for manufacturing solid-state imaging device |
KR20080074494A (en) * | 2007-02-09 | 2008-08-13 | 주식회사 하이닉스반도체 | Method of manufacturing a semiconductor device |
KR100856941B1 (en) | 2008-01-07 | 2008-09-04 | 주식회사 동부하이텍 | Method for manufacturing an image sensor |
-
2008
- 2008-11-05 KR KR1020080109559A patent/KR101038809B1/en not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016204771A1 (en) * | 2015-06-18 | 2016-12-22 | Intel Corporation | Bottom-up fill (buf) of metal features for semiconductor structures |
CN107743653A (en) * | 2015-06-18 | 2018-02-27 | 英特尔公司 | Bottom-up filling for the metallicity of semiconductor structure(BUF) |
US20180130707A1 (en) * | 2015-06-18 | 2018-05-10 | Intel Corporation | Bottom-up fill (buf) of metal features for semiconductor structures |
WO2023237362A1 (en) * | 2022-06-10 | 2023-12-14 | International Business Machines Corporation | Through-substrate via skipping a backside metal level for power delivery |
Also Published As
Publication number | Publication date |
---|---|
KR101038809B1 (en) | 2011-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20100063269A (en) | Image sensor and method for manufacturing thereof | |
KR101016474B1 (en) | Image Sensor and Method for Manufacturing Thereof | |
US8030727B2 (en) | Image sensor and method for manufacturing the same | |
KR20090072923A (en) | Image Sensor and Method for Manufacturing thereof | |
KR100999740B1 (en) | Image Sensor and Method for Manufacturing Thereof | |
US20090166788A1 (en) | Image sensor and method for manufacturing the same | |
US20100164046A1 (en) | Image sensor and method for manufacturing the same | |
KR101038809B1 (en) | image sensor and fabricating method thereof | |
KR101002158B1 (en) | Image Sensor and Method for Manufacturing Thereof | |
US8080840B2 (en) | Image sensor and manufacturing method of image sensor | |
US20100117174A1 (en) | Method of manufacturing image sensor | |
US20100079633A1 (en) | Image sensor and manufacturing method of image sensor | |
US20090159942A1 (en) | Image Sensor and Method for Manufacturing the Same | |
JP2010157713A (en) | Image sensor, and method of manufacturing the same | |
KR101053773B1 (en) | Image sensor and manufacturing method | |
KR20100077564A (en) | Image sensor and method for manufacturing thereof | |
KR20100036716A (en) | Image sensor and method for manufacturing thereof | |
KR101024735B1 (en) | Method for Manufacturing of Image Sensor | |
KR101016514B1 (en) | Image Sensor and Method for Manufacturing thereof | |
KR101033351B1 (en) | Image Sensor and Method for Manufacturing Thereof | |
KR100882980B1 (en) | Image sensor and method for manufacturing thereof | |
KR101016505B1 (en) | Image Sensor and Method for Manufacturing thereof | |
KR101024711B1 (en) | Image sensor and manufacturing method of image sensor | |
KR20100069936A (en) | Image sensor and method for manufacturing thereof | |
KR20100080170A (en) | Image sensor and fabricating method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |