KR20100040042A - Heater and manufacturing apparatus for silicon crystal having the same - Google Patents

Abstract

PURPOSE: A heater and an apparatus for manufacturing a silicon mono-crystalline including the same are provided to improve the growth rate of a mono-crystalline ingot by including a high temperature heater unit and a low temperature heater unit. CONSTITUTION: The heater in an apparatus for manufacturing a mono-crystalline manufactures the mono-crystalline using a czochralski method including a cylindrical shape of a heater unit(300). The heater unit includes a first slit(310) and a second slit(320). The first slit and the second slit are alternately arranged to form a zig-zag shape. The first slit expands from the lower side of the heater to the upper side of the heater. The second slit expands from the upper side of the heater to the lower side of the heater. The heater unit includes a low temperature heater unit(200) and a high temperature heater unit(100).

Description

HEATER AND MANUFACTURING APPARATUS FOR SILICON CRYSTAL HAVING THE SAME

The present invention relates to a heater and a silicon single crystal manufacturing apparatus including the same, and more particularly, in the single crystal manufacturing apparatus for producing a single crystal by the Czochralski method using a horizontal magnetic field, having a high heat generating portion and a low heat generating portion, The growth of the single crystal ingot by improving the temperature gradient at the liquid-liquid interface by maintaining the direction of the horizontal magnetic field and the heat provided from the high heat generating portion in parallel or below a certain angle so as to efficiently transmit heat at high temperature by using horizontal convection. The present invention relates to a heater for increasing the speed and a silicon single crystal manufacturing apparatus including the same.

Generally, the silicon single crystal used as a substrate for semiconductor device manufacturing is manufactured by the Czochralski method (hereinafter Cz). The Cz method is a method in which polycrystalline silicon is placed in a quartz crucible, electricity is supplied to a heating element, and the crucible is heated to melt. .

Most crystal manufacturing devices are circular in steel and consist of a heat insulating material for blocking heat, a heating element for melting silicon, a graphite crucible surrounding a quartz crucible, and a support shaft for supporting the internal structure. It is called a (hot zone). Most of the hot zone is composed of carbon, and a heating element, a graphite crucible, a support shaft, and the like are made of graphite, and components are different depending on characteristics and manufacturers.

In semiconductor device manufacturing, large diameters of single crystal wafers are increased to increase yields, and as the filling amount of the quartz crucible of polycrystalline silicon increases, application of a magnetic field is essential for effective control. It is divided into cusp magnetic field, horizontal magnetic field and vertical magnetic field according to the magnetic force line distribution of the magnetic field. In the 300mm large diameter single crystal, the horizontal magnetic field method is mainly used to control the convection of silicon solution and to reduce the oxygen concentration eluted from quartz crucible. The magnetic field acts with the conductive silicon melt and becomes less viscous by the Lorentz force, thus suppressing the flow.

Here, the state of the conventional general single crystal manufacturing apparatus is demonstrated as follows. 1 is a cross-sectional view schematically showing a conventional single crystal manufacturing apparatus.

As shown therein, the single crystal manufacturing apparatus includes a quartz crucible 12, a graphite crucible 14, a magnetic field generating device 16, a heat insulating material 18 and a heater 11, and as described above, the quartz The silicon is accommodated in the crucible 12 and melted by the silicon melt SM by applying heat from the heater 11. Thereafter, the silicon melt SM is grown into a single crystal ingot IG.

The single crystal produced by such a Cz method has a crystal defect determined by the crystal growth conditions. In this regard, V. Voronkov describes the crystal growth rate V and the temperature gradient G near the liquid-liquid interface as important factors for determining crystal defects. That is, the introduction amount is determined by a parameter called V / G (mm 2 / ° C.), which is a ratio between the crystal pulling rate V (mm / min) and the temperature gradient G (° C./mm) near the solid-liquid interface when growing a single crystal. (VVVoronkov, Journal of Crystal Growth, 59 (1982), 625-643). Equation 1 representing this is as follows.

to be.

As shown here, the single crystal pulling rate V and the ratio of the temperature gradient G value in the liquid-liquid interface and the comparative advantage of the parameter (ξ) can be distinguished from the region of the silicon single crystal. 2 is described in more detail. 2 is a graph briefly illustrating the division of the crystal regions according to the pulling speed of the single crystal.

As shown in Equations 1 and 2, when the single crystal growth rate V is large, that is, when the V / G value is greater than or equal to the parameter (ξ), vacancys are incorporated into the crystals in large quantities and are combined. Crystal defects of the flow pattern defects (FPD) formed by the formed voids occur, and are called V-rich regions. When the growth rate is lowered and the V / G value is less than the parameter (ξ), interstitial Si atoms are incorporated into crystals and are located between the silicon lattice. When the invasive Si aggregates with each other, it appears as a point bond called a large dislocation pit (LDP) and this region is defined as an I-rich region.

At this time, a P-band region in which an oxygen induced stacking fault (OiSF) defect occurs between the V-rich region and the I-rich region is adjacent to the V-rich region, and outwardly there are points such as FPD and LDP. Pure regions where no defects exist are formed. Pure region is divided into Pv region adjacent to V-rich and PI region adjacent to I-rich.

Point defects resulting from crystal growth such as COP, FPD, and LDP described above cause a decrease in the semiconductor process by generating a leakage current, which is one of current characteristics, as the semiconductor line width gradually decreases. Accordingly, semiconductor device manufacturers are demanding wafers made of single crystals made of pure regions where point defects do not exist. In order to produce a single crystal composed of pure regions, as in the theory presented by Voronkov, it is necessary to grow a single crystal by controlling the growth rate V within a certain range in a manufacturing apparatus forming a constant temperature gradient.

One of the ways to increase the productivity in the production of silicon single crystal is to reduce the production cost by producing a large number of single crystals in a short time. To this end, it is necessary to shorten the time of the body manufacturing process of the ingot, which takes up a large portion of the single crystal production process, and eventually increase the single crystal growth rate, thereby reducing the overall processing time.

In addition, there is proposed a method of improving the temperature gradient value, for example, a method of changing the structure or material of the heat insulating material in the manufacturing apparatus, a method of installing a separate cooling device, and the like.

However, conventional methods and methods for increasing single crystal growth have several problems.

First, in order to produce a single crystal consisting of a pure region having no point defects, it is necessary to grow at a certain range of growth speeds, which makes it difficult to shorten the time.

Secondly, a method of improving the temperature gradient is proposed for this purpose, but the above-described methods have a problem that may cause a waste of cost because the above-described methods are to install a separate equipment or change the material.

Third, in the case of a method of increasing the temperature gradient near the interface by making the upper and lower heat distributions different, promoting the longitudinal convection from the bottom of the crucible to the surface of the solution to become more spiral. In the Czochralski method single crystal production apparatus using a horizontal magnetic field, the longitudinal convection is relatively small.

One object of the present invention for solving the above problems is to provide a heater capable of improving the growth rate of a single crystal ingot for producing a single crystal composed of a pure region having no point defects, and a silicon single crystal manufacturing apparatus including the same.

Another object of the present invention is to provide a heater and a silicon single crystal manufacturing apparatus including the same, which can prevent waste by improving the temperature gradient of the liquid-liquid interface without installing additional equipment or changing materials.

Still another object of the present invention is to provide a heater applicable to a Czochralski method single crystal production apparatus using a horizontal magnetic field and a silicon single crystal production apparatus including the same in order to improve the temperature gradient of the solid-liquid interface.

According to a preferred embodiment of the present invention for achieving the above object of the present invention, the heater of the single crystal manufacturing apparatus for producing a single crystal by the Czochralski method using a horizontal magnetic field is the current supply unit and the flow of the current is supplied It includes a cylindrical heat generating portion for generating heat by the electrical resistance by. At this time, the evolving shape of the heat generating unit is spaced apart by a predetermined interval and is formed extending from the lower side of the heater to the upper side and the upper side from the upper side to the lower side, by the second slit alternately formed with the first slit It is formed of a zig-zag-shaped current passage, wherein the heat generating portion includes a low heat generating portion having a relatively wide width of the current passage and a high heat generating portion having a relatively narrow width of the current passage compared to the low heat generating portion; The high heat generating portion is disposed in a direction opposite to the circumference of the heater.

At this time, it is preferable to further include a magnetic field generating unit for providing a horizontal magnetic field lines of magnetic force to the heater, the circumferential angle occupied by the high heat generating portion with respect to the circumferential direction of the heater is more preferably 45 degrees to 130 degrees.

Further, the straight line connecting the center of the opposed high heat generating portion is preferably parallel to the direction of the horizontal magnetic field lines of magnetic force, and the straight line passing through the center of the opposed high heat generating portion is with respect to the central axis of the magnetic field line distribution of the horizontal magnetic field. It is also possible to achieve an angle of -15 degrees to 15 degrees.

In addition, the ratio of the width of the low heat generating portion and the width of the high heat generating portion forming the heat generating portion is preferably 1 to 0.5 to 1 to 0.9.

In addition, according to another preferred embodiment of the present invention for achieving the above object of the present invention, the silicon single crystal manufacturing apparatus is a chamber, a crucible installed inside the chamber and containing the silicon melt and the crucible to heat the crucible Comprising a heater comprising a cylindrical heating portion formed in a shape surrounding the, wherein the heater is disposed in a direction facing each other and generates a relatively low heat compared to the high heat generating portion and the high heat generating portion However, it includes a low heat generating portion disposed between the high heat generating portion.

At this time, the silicon single crystal manufacturing apparatus further comprises a magnetic field generating unit for generating a magnetic field line to the heater by generating a horizontal magnetic field, the straight line connecting the central axis of the magnetic force line distribution of the horizontal magnetic field and the center of the high heat generating unit It is desirable to maintain an angle of -15 degrees to 15 degrees.

In addition, the heater is provided to provide a current to the heat generating portion formed by the slits disposed spirally along the current moving medium to generate heat with an electrical resistance, each of the slits forming the low heat generating portion and the high heat generating portion The width ratio of is more preferably 1 to 0.5 to 1 to 0.9.

The angle of the high heat generating unit with respect to the circumferential direction of the heater is preferably 45 degrees to 130 degrees, and the ratio of the high heat generating unit and the low heat generating unit occupied by the heater is more preferably 1 to 2 to 1 to 7. Do.

According to the present invention, provided with a high heat generating portion and a low heat generating portion, by maintaining the direction provided in the direction of the magnetic force line of the horizontal magnetic field and the high heat generating portion in parallel or below a certain angle, by effectively transferring heat using horizontal convection, By improving the temperature gradient in the solid-liquid interface, there is an effect that can increase the growth rate of the single crystal ingot to produce a single crystal consisting of a pure region without point defects.

In addition, there is an advantage that it is possible to prevent the waste cost by improving the temperature gradient of the liquid-liquid interface through a simple structural change without installing a separate equipment or changing the material.

In addition, there is an advantage that can be applied to the Czochralski method single crystal manufacturing apparatus using a horizontal magnetic field by introducing a method of improving the temperature gradient of the solid-liquid interface by using the horizontal convection of the silicon melt.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, in the following description, elements that can be treated identically in terms of configuration and function are almost the same and can be specified by the same reference numerals.

First embodiment

Referring to the heater according to the first embodiment of the present invention is as follows. 3 is a developed view schematically showing a heater according to a first embodiment of the present invention, Figure 4 is a cross-sectional view showing a cross section of the heater according to the first embodiment of the present invention. For reference, a general single crystal manufacturing apparatus will be described with reference to FIG. 1 for convenience of description.

As shown in the drawing, the heater includes a current supply unit 302 to which current is supplied, and a heat generating unit 300 having a cylindrical shape to generate heat by electric resistance caused by the flow of the current.

At this time, the development shape of the heating unit 300 is spaced apart a predetermined interval is formed extending from the upper side to the lower side and the first slit 310 and the upper side, the first slit 310 and The second slits 320 are alternately formed to form a zig-zag shape.

That is, the current passage 301 through which the current flows is formed by the first slit 310 and the second slit 320, and the current flows in the current passage 301, whereby heat is generated by electrical resistance. Will be generated.

In general, an electric heater generates heat by an electric resistance, and a heat generation size is determined by a resistance, and a resistance is determined by a moving distance and a cross-sectional area of a current. Therefore, in order to adjust the heating size, the moving distance and the cross-sectional area of the current moving medium can be adjusted. That is, the heat generation size may be adjusted by adjusting the width of the current passage 301.

In this case, the heat generating unit 300 includes a low heat generating unit 200 and a high heat generating unit 100. As described above, the low heat generating unit 200 is a section in which the width W ₁ of the current passage 301 is relatively wide, and the high heat generating unit 100 is the width of the current passage 301. (W ₂ ) is a section formed in a shape relatively narrower than the width W ₁ of the current passage 301 forming the section of the low heat generating portion 200. At this time, the high heat generating unit 100 is disposed in pairs at positions opposite to each other with respect to the circumferential direction of the heater.

Here, since the low heat generating portion 200 is provided with a relatively wide width (W ₁ ) of the current passage 301 through which the current passes, generates a relatively low heat, the high heat generating portion 100 The width W ₂ of the current passage 301 through which the current passes is provided relatively narrow, thereby generating relatively high heat.

At this time, the circumferential angle θ ₁ occupied by the high heat generating part 100 with respect to the circumferential direction of the circular heater is provided at 45 degrees to 130 degrees. That is, the high heat generating unit 100 is preferably provided to occupy a specific gravity of approximately 12.5% to 33.3% of the entire circumference formed by the heat generating unit 300.

In addition, it is also possible to be provided with a magnetic field generating unit for providing a horizontal magnetic field lines of magnetic force in the heater, it is shown in Figure 5 to explain in more detail. FIG. 5 is a cross-sectional view illustrating a magnetic field generating unit that provides a magnetic force line to a heater according to a first embodiment of the present invention.

As shown therein, a magnetic field generating unit 400 is provided to provide a horizontal magnetic field magnetic force line 410 to the heater, and the magnetic force line 410 is a straight line 110 connecting the center of the high heat generating unit 100 with each other. Arranged in parallel.

At this time, in the present embodiment, the magnetic force line 410 and the straight line is presented as parallel to each other, but is not limited thereto, for example, for example, a straight line connecting the center of the opposed high heat generating portion 100 And an angle θ ₂ formed with the central axis of the distribution of the magnetic force lines 410 of the horizontal magnetic field may be provided to form an angle of −15 degrees to 15 degrees.

At this time, the ratio of the width of the low heat generating portion 200 and the high heat generating portion 100 in the heater is preferably from 0.5 to 1 to 0.9.

Here, a comparative example is presented, and the heat generation distribution with the heater according to the first embodiment of the present invention and the pulling speed of the above-described single crystal ingot are compared as follows. 6 is a developed view schematically showing a heater according to a comparative example, Figure 7 is a cross-sectional view showing a cross section of the heater according to a comparative example, Figure 8 is a heater and a comparative example according to a first embodiment of the present invention This graph shows the relationship between the pure area of the heater and the pulling speed.

As shown in the drawing, the heater 30 of the heater according to the comparative example is provided with a constant width W ₃ of the above-described current path. That is, the slits disposed above and below the heater are formed to be spaced apart from each other by a predetermined interval, and are provided with the same width, respectively, so that the width W ₃ of the current passage is constant.

Accordingly, as shown in FIG. 7, the heat generating unit 30 of the heater according to the comparative example shows the same heat generation size with respect to the circumferential direction of the heater.

On the contrary, it can be seen that the heat generating part 300 of the heater according to the first embodiment of the present invention shown in FIG. 5 shows a relatively high heat generating size in the high heat generating part 100 described above with respect to the circumferential direction of the heater. have.

Herein, the comparative example will be described in more detail. After the application of a horizontal magnetic field in a 300 mm single crystal growth apparatus, single crystals were grown. In order to confirm the exact margin of pure region, the growth rate of single crystal was gradually decreased from 0.57mm / min at the beginning of growth and lowered to 0.37mm / min in the second half. The grown single crystal was cut into blocks having a size of 250 mm and then cut into a thickness of 2 mm in the direction of the growth axis in order to observe the distribution of point defects. The prepared sample showed defect distribution by measuring XRD and MCLT MAP.

Referring to the result shown in FIG. 8, as compared with the defect distribution B according to the comparative example and the defect distribution A according to the first embodiment of the present invention, the impression of the point where the pure region is formed is described. It can be seen that the speed increases.

In general, convection is formed along the direction of the magnetic field near the surface of the silicon melt. 9 is a view showing the convection phenomenon of the silicon melt in the direction of the magnetic field. That is, as shown in FIG. 9, according to the direction of the magnetic field, that is, the direction of the magnetic force line 410 described above, convection occurs in the silicon melt SM, and the direction C of the convection. Appears to substantially coincide with the direction of the magnetic force line 410.

Therefore, by using the convection, if the heat transferred from the heater to the solid-liquid interface, the temperature gradient can be easily increased.

That is, by making the high heat generating portion 100 parallel to the magnetic force line 410 or to form an angle of less than a predetermined angle, the heat transmitted from the high heat generating portion 100 through the convection can be effectively transmitted to the solid-liquid interface. Thus, the pulling speed of the single crystal ingot IG can be improved.

In addition, since it is possible to improve the temperature gradient in the liquid-liquid interface simply by changing the structure without installing equipment or changing materials, there is an advantage of preventing waste of cost.

Second embodiment

Referring to the silicon single crystal manufacturing apparatus according to the second embodiment of the present invention. 10 is a cross-sectional view schematically showing a silicon single crystal manufacturing apparatus according to a second embodiment of the present invention.

As shown herein, the silicon single crystal manufacturing apparatus includes a chamber 10, a crucible 20, a heat insulating member 45, a heat shield 50, and a heater 500.

Here, the silicon single crystal manufacturing apparatus will be briefly described. In the chamber 10, a crucible 20 containing silicon melt SM is installed, and a crucible support 25 made of graphite is formed outside the crucible 20. ) Is installed to surround the crucible 20.

The crucible support 25 is fixedly installed on the rotation shaft 30, which is rotated by a driving means (not shown) to raise the crucible 20 while rotating, so that the solid-liquid interface maintains the same height. Do it. The crucible support 25 is surrounded by a cylindrical heater 500 at predetermined intervals, and the heater 500 is surrounded by a heat insulating member 45.

That is, the heater 500 is installed on the side of the crucible 25 to melt a high-purity polysilicon mass loaded in the crucible 20 to form a silicon melt SM, and the heat insulating member 45 is formed at the heater 500. Heat dissipation is prevented from spreading toward the wall of the chamber 10 to improve thermal efficiency.

An upper portion of the chamber 10 is provided with an pulling means (not shown) for winding up and pulling a cable. The lower portion of the chamber 10 is in contact with the silicon melt SM in the crucible 20 and is pulled up to form a single crystal ingot ( A seed crystal for growing IG) is installed. The pulling means rotates while pulling up the cable during the growth of the single crystal ingot IG, wherein the silicon single crystal ingot IG is rotated about the same axis as the rotation axis 30 of the crucible 20. Rotate in the opposite direction to the direction of pulling up.

At this time, in order to control the convection of the silicon melt (SM) accommodated in the crucible 20, the magnetic field generating unit 400 for providing a horizontal magnetic field to the silicon melt (SM) outside the chamber 10 Is placed.

Here, FIG. 11 is provided to describe the heater 500 and the magnetic field generator 400 in more detail. FIG. 11 is a perspective view schematically illustrating a heater and a magnetic field generating unit included in the silicon single crystal manufacturing apparatus of FIG. 10.

As shown in the drawing, the heater 500 supplies electricity to a heat generating portion formed by the slits 510 arranged spirally along the height direction of the cylindrical current moving medium to generate heat with an electrical resistance. It is provided with a heater.

In this case, the heater 500 is disposed in a direction opposite to each other and generates a relatively low temperature heat than the high heat generating portion 600 and the high heat generating portion 600 that generates relatively high heat, the high heat generating portion It includes a low heat generating portion 700 disposed between the 600.

Here, the angle θ ₃ of the straight line passing through the center of the high heat generating unit 600 opposite to the central axis of the distribution of the magnetic force line 410 of the horizontal magnetic field provided by the magnetic field generating unit 400 is -15 degrees to It is provided to maintain an angle of 15 degrees.

That is, as described above in the first embodiment, the arrangement position of the high heat generating part 600 in the heater 500 is disposed so as to be substantially parallel to the direction of the magnetic force line 410, so that the inside of the crucible 20 is located. By using the convection of the silicon melt SM received, the heat transferred from the high heat generating part 600 may be effectively transferred between the silicon melt SM and the single crystal ingot IG, and thus, at the liquid-liquid interface The temperature gradient can be improved.

In addition, the angle θ ₄ occupied by the high heat generating part 600 with respect to the circumferential direction of the heater 500 is provided to maintain 45 to 130 degrees.

In addition, since the heat generating size of the high heat generating unit 600 and the low heat generating unit 700 of the heater 500 is determined by the width of the slit 510, the width of the slit 510 is adjusted so It is possible to adjust the heat unit 600 and the low heat generating unit 700, which is shown in Figure 12 to explain in more detail. 12 is a developed view schematically illustrating a heater provided in the silicon single crystal production apparatus according to the second embodiment of the present invention.

As shown therein, the width W ₅ of the slit 510 forming the high heat generating part 600 is relative to the width W ₄ of the slit 510 forming the low heat generating part 700. More widely provided. That is, the width of the current moving medium forming the high heat generating portion 600 is formed to be relatively narrower the width of the current moving medium forming the low heat generating portion 700, as described above, to increase the resistance As such, it is provided to increase the exothermic size.

At this time, the ratio of the width (W ₅₎ of the slit 510 to form a width (W ₄₎ with the charges yeolbu 600 of the slit 510 which forms the lower heating portion 700 is one-to- It is preferable that it is 0.5-1 to 0.9.

In addition, the ratio of the high heat generating part 600 and the low heat generating part 700 is maintained at 1 to 2 to 1 to 7 based on the circumferential angle occupying in the circumferential direction of the heater 500.

Therefore, by maintaining the direction of the heat provided from the magnetic force line 410 of the horizontal magnetic field and the high heat generating portion 600 in parallel, by using the convection of the silicon melt (SM) to improve the temperature gradient in the solid-liquid interface, This has the advantage of improving the pulling speed of the single crystal ingot (IG).

In addition, according to this, there is an effect that can increase the growth rate, that is, the pulling speed of the single crystal ingot (IG) for producing a single crystal consisting of a pure region free of defects.

In addition, in the Czochralski method single crystal manufacturing apparatus using a horizontal magnetic field, since the heat can be effectively transferred using the horizontal convection of the silicon melt, there is an advantage that the temperature gradient can be easily improved at the solid-liquid interface.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a cross-sectional view schematically showing a conventional single crystal manufacturing apparatus.

2 is a graph briefly illustrating the division of the crystal regions according to the pulling speed of the single crystal.

3 is a developed view schematically showing a heater according to a first embodiment of the present invention.

4 is a cross-sectional view showing a cross section of the heater according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating a magnetic field generating unit that provides a magnetic force line to a heater according to a first embodiment of the present invention.

6 is a developed view schematically showing a heater according to a comparative example.

7 is a cross-sectional view showing a cross section of a heater according to a comparative example.

8 is a graph showing the relationship between the pure area and the pulling speed of the heater according to the first embodiment of the present invention and the heater according to the comparative example.

9 is a view showing the convection phenomenon of the silicon melt in the direction of the magnetic field.

10 is a cross-sectional view schematically showing a silicon single crystal manufacturing apparatus according to a second embodiment of the present invention.

FIG. 11 is a perspective view schematically illustrating a heater and a magnetic field generating unit included in the silicon single crystal manufacturing apparatus of FIG. 10.

12 is a developed view schematically illustrating a heater provided in the silicon single crystal production apparatus according to the second embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: chamber 20: crucible

45: heat insulation member 50: heat shield

100: high heat generating unit 200: low heat generating unit

300: heat generating unit 301: current path

302: current supply unit 310: first slit

320: second slit 400: magnetic field generating unit

410: magnetic field lines 500: heater

Claims (11)

In the heater of the single crystal manufacturing apparatus which manufactures a single crystal by the Czochralski method containing the current supply part to which electric current is supplied and the heat generating part of the cylindrical shape which generate | occur | produces heat by the electric resistance by the flow of the said electric current, The evolving shape of the heating unit is spaced at a predetermined interval and is formed to extend from the lower side to the upper side of the first slit and from the upper side to the lower side, and the zigzag by the second slit alternately formed with the first slit ( zig-zag) shape, the heat generating portion, A relatively low heat generating portion having a relatively wide width of the heat generating portion; And A high heat generating portion having a narrower width than the low heat generating portion; Includes, wherein the high heat generating portion, characterized in that disposed in a direction opposite to the circumference of the heater. The method of claim 1, And a magnetic field generator for providing a horizontal magnetic field line with the heater. 3. The method of claim 2, The circumferential angle occupied by the high heat generating unit with respect to the circumferential direction of the heater is a heater, characterized in that 45 to 130 degrees. 3. The method of claim 2, And a straight line connecting the center of the opposed high heat generating portion is parallel to the direction of the magnetic force line of the horizontal magnetic field. 3. The method of claim 2, And a straight line passing through the center of the opposed high heat generating part forms an angle of -15 degrees to 15 degrees with respect to the central axis of the magnetic field line distribution of the horizontal magnetic field. 3. The method of claim 2, The ratio of the width of the low heat generating portion and the width of the high heat generating portion forming the heat generating portion is a heater, characterized in that 1 to 0.5 to 1 to 0.9. chamber; A crucible installed inside the chamber and containing a silicon melt; And A heater including a cylindrical heating part formed in a shape surrounding the crucible so as to heat the crucible; To include, the heater is A high heat generating portion disposed in a direction facing each other to generate relatively high temperature heat; And A low heat generation unit which generates heat at a relatively low temperature as compared with the high heat generation unit, and is disposed between the high heat generation units; Silicon single crystal manufacturing apparatus comprising a. The method of claim 7, wherein And a magnetic field generating unit generating a horizontal magnetic field to provide a magnetic force line to the heater, wherein a straight line connecting the central axis of the magnetic force line distribution of the horizontal magnetic field and the center of the opposed high heat generating portion maintains an angle of -15 degrees to 15 degrees. Silicon single crystal production apparatus, characterized in that. The method of claim 8, The heater is provided to generate a heat with an electrical resistance by providing a current to the heating portion formed by the slits formed alternately extending from the upper side, the lower side to the lower side, the upper side corresponding to the current moving medium, the low heat generating unit And the width ratio of each of the slits forming the high heat generating portion is 1 to 0.5 to 1 to 0.9. The method of claim 8, The angle of the high heat generating unit with respect to the circumferential direction of the heater is a silicon single crystal manufacturing apparatus, characterized in that 45 degrees to 130 degrees. The method of claim 8, The ratio of the high heat generating portion and the low heat generating portion occupied by the heater is 1 to 2 to 1 silicon manufacturing apparatus, characterized in that.

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