KR20100034931A - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- KR20100034931A KR20100034931A KR1020080094182A KR20080094182A KR20100034931A KR 20100034931 A KR20100034931 A KR 20100034931A KR 1020080094182 A KR1020080094182 A KR 1020080094182A KR 20080094182 A KR20080094182 A KR 20080094182A KR 20100034931 A KR20100034931 A KR 20100034931A
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Abstract
Description
The present invention relates to a light emitting device, and more particularly, to a light emitting device having an electrode structure capable of uniformly forming a current density distribution.
The light emitting device is a device that emits light using semiconductor layers. In order to make the current density distribution uniform, a distance between the p-type electrode and the n-type electrode is generally arranged.
For example, US Pat. No. 6,307,218 B1 proposes an electrode structure of a light emitting device as shown in FIG. 1, wherein the n-type electrode is an n-
By the way, in the electrode structure shown in Fig. 1, the average distance between the n-type electrode and the p-type electrode is uniform in the A portion, but in the B portion, the average distance between the n-type electrode and the p-type electrode Becomes non-uniform, and as shown in FIG. 2, the current flows relatively more than the portion A in the portion B. That is, the current density distribution of the light emitting device is generally nonuniform, and in particular, the portion of the
In summary, the electrode structure of the conventional light emitting device has a problem that the current density distribution is unevenly formed because the distance between the electrodes is not constant, and as a result, the light output characteristics and the light conversion efficiency of the light emitting device are deteriorated.
The present invention is to solve the above problems of the prior art, an object of the present invention is to provide a light emitting device having an electrode structure to uniformly form a current density distribution to improve light output characteristics, light conversion efficiency and the like.
In order to achieve the above object, the light emitting device according to the present invention is formed on a first semiconductor layer, a second semiconductor layer formed on a part of the first semiconductor layer, the first semiconductor layer, at least one first A first electrode including a pad, and a second electrode formed on the second semiconductor layer, the second electrode including at least one second pad formed to face the first pad, wherein the first electrode is the first electrode; One or more first arms extending lengthly from the first pad in a direction from a pad to the second pad and a length extending from the first arm in a direction perpendicular to the direction from the first pad to the second pad. A second cancer.
In one embodiment of the present invention, the second electrode extends from the second pad in a direction perpendicular to the connecting direction of the first pad and the second pad, and at least a portion of the first pad and the second pad. It includes an outer arm formed to extend in a direction parallel to the connection direction of the pad.
In another embodiment of the invention, the first electrode and the second electrode includes a curved portion.
In another embodiment of the present invention, the connecting arm of the second electrode is formed to maintain a constant distance from the second arm of the first electrode.
In another embodiment of the present invention, the second electrode further includes a protruding arm protruding from the outer arm. In addition, the protruding arm may extend in a direction toward the first electrode.
In another embodiment of the present invention, the second electrode includes a curved portion formed at one end of the outer arm. Here, the distance between the curved portion of the outer arm and the second arm of the first electrode is constant.
In the light emitting device according to the present invention, the average distance between the n-type electrode and the p-type electrode becomes relatively constant, resulting in a uniform current density distribution of the light emitting device, and consequently, the light output characteristic, the light conversion characteristic and the forward voltage characteristic. Performance of light emitting devices such as the like can be improved.
As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. Like reference numerals are used for like elements in describing each drawing.
When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between.
The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
3 and 4 are views illustrating a light emitting device according to a first embodiment of the present invention. In particular, FIG. 4 is a cross-sectional view of the light emitting device taken along the line II ′ of FIG. 3. FIG. 5 is a diagram illustrating a current density distribution in the light emitting device of FIG. 3.
First, referring to FIGS. 3 and 4, the light emitting diode (LED) of the present embodiment includes a
The
The
The n-
The
The p-
The
The n-
Referring back to FIG. 3, the n-
The p-
In such a light emitting device, the wing arm of the n-
Also, as shown in part B of FIG. 3, the deviation of the distance between the wing arm of the n-
That is, the overall current density distribution of the light emitting device can be made more uniform in the horizontal direction and the vertical direction as shown in FIG. 5. Therefore, according to the electrode structure proposed in the present invention, it is possible to reduce the electrode portion that does not contribute to the current distribution as compared with the conventional. As a result, the length of the electrode, in particular the length of the n-
Hereinafter, the characteristics of the light emitting device of the present invention will be compared with conventional light emitting devices.
FIG. 6 is a view schematically showing conventional light emitting devices and a light emitting device of the present invention, and FIG. 7 is a view showing experimental results of forward voltage and light output of the light emitting devices of FIG. 6. FIG. 8 is a diagram illustrating experimental results of light conversion efficiency of the light emitting devices of FIG. 6. In detail, FIG. 6A schematically illustrates a conventional first light emitting device, and FIG. 6B schematically illustrates a conventional second light emitting device. 6C schematically shows a conventional third light emitting device, and FIG. 6D schematically shows a fourth light emitting device according to the present invention.
First, let's look at the forward voltage and light output characteristics. Referring to FIG. 7, the forward voltage of the first light emitting device a is about 3.34V and the light output is about 56.8 kV. In addition, the forward voltage of the conventional second light emitting device b is about 3.33 V and the light output is about 57.8 kV. That is, while the first and second light emitting devices a and b have excellent forward voltage characteristics, the light output is low due to light absorption of the electrode.
The forward voltage of the conventional third light emitting device c is about 3.48V and the light output is about 60 kV. That is, although the light output is improved compared to the first and second light emitting devices A and B by minimizing unnecessary lengths of the electrodes, the forward voltage has a disadvantage of greatly increasing.
The forward voltage of the fourth light emitting element d according to the present invention is about 3.36 V and the light output is about 59.1 kV. That is, although the light output is greatly improved than the conventional first and second light emitting devices a and b by reducing the length of the unnecessary electrode, the forward voltage is considerably smaller than that of the conventional third light emitting device c. Can lose. In short, the light emitting device of the present invention has excellent forward voltage characteristics and light output characteristics.
Next, we will look at the light conversion efficiency. Here, the light conversion efficiency means the ratio of the input current and the light output (light output / input current).
As shown in FIG. 8, the light conversion efficiency (0.1468) of the light emitting device (d) of the present invention is higher than the light conversion efficiency (0.1415, 0.145, and 0.1436) of the conventional light emitting devices (a, b, and c). That is, it is confirmed that the light conversion efficiency of the light emitting device (d) of the present invention is improved by up to 4% over the conventional light emitting devices (a, b, and c).
9 is a view showing a light emitting device according to a second embodiment of the present invention. Referring to FIG. 9, the light emitting device of this embodiment includes an n-
The p-
The outer arm has more curved portions than the outer arm of the first embodiment, and as a result, the distance between the n-
10 is a view showing a light emitting device according to a third embodiment of the present invention.
Referring to FIG. 10, the light emitting device of this embodiment includes an n-
Hereinafter, since the light emitting device of the present embodiment is similar to the light emitting device of the first embodiment, a description of similar parts will be omitted.
The p-
This protruding arm makes the distance between the n-
In short, referring to the first to third embodiments, the n-type electrode has a center arm formed in the direction of the p-type pad from the n-type pad and a wing formed in a direction perpendicular to the direction from the n-type pad to the p-type pad. It is made of cancer. That is, as long as the n-type electrode includes a wing arm formed in a direction perpendicular to the direction from the n-type pad to the p-type pad, the n-type electrode may be variously modified. Of course, the p-type electrode will also be modified to match the n-type electrode. Therefore, it will be apparent to those skilled in the art that these various modifications do not affect the scope of the present invention.
11 is a view schematically showing a light emitting device according to a fourth embodiment of the present invention.
Referring to FIG. 11, the light emitting device of this embodiment includes an n-
Hereinafter, since the light emitting device of the present embodiment is similar to the light emitting device of the first embodiment, a description of similar parts will be omitted.
The n-
12 is a view schematically showing a light emitting device according to a fifth embodiment of the present invention.
Referring to FIG. 12, the light emitting device of the present embodiment includes a first n-
That is, the light emitting device of this embodiment includes a plurality of n-
The first n-
The second n-
The first p-
The second p-
Meanwhile, the p-
Unlike the light emitting devices of the first to fourth embodiments, the light emitting device of this embodiment is composed of a plurality of n-type pads and a plurality of p-type pads, but the practical operation is similar. Of course, the light emitting device having such a structure can be variously modified as shown in the first to fourth embodiments.
FIG. 13 is a view illustrating conventional light emitting devices and a light emitting device according to the present invention, and FIG. 14 is a view showing experimental results of light conversion efficiency and light output of the light emitting devices of FIG. 13. In detail, FIG. 13A schematically illustrates a conventional first light emitting device, and FIG. 13B schematically illustrates a conventional second light emitting device. 13C schematically illustrates a third light emitting device according to the present invention.
Referring to FIG. 14, both the light conversion efficiency and the light output of the conventional first light emitting device a are low. The conventional second light emitting device (b) has improved the light conversion efficiency and light output than the first light emitting device (a) by minimizing the length of unnecessary electrodes. The third light emitting device (c) according to the present invention improves the light conversion efficiency and light output significantly compared to the conventional light emitting devices (a and b) by reducing the unnecessary electrode portion to maintain a constant gap between the electrode portions. .
In short, regardless of the number of n-type pads and p-type pads, the light emitting device of the present invention can reduce unnecessary electrode portions to improve light conversion efficiency and light output.
The embodiments of the present invention described above are disclosed for purposes of illustration, and those skilled in the art having ordinary knowledge of the present invention may make various modifications, changes, and additions within the spirit and scope of the present invention. Should be considered to be within the scope of the following claims.
1 is a view schematically showing a conventional first light emitting device.
FIG. 2 is a diagram illustrating a current density distribution of the light emitting device of FIG. 1.
3 and 4 are views illustrating a light emitting device according to a first embodiment of the present invention.
FIG. 5 is a diagram illustrating a current density distribution in the light emitting device of FIG. 3.
6 is a view showing conventional light emitting devices and the light emitting device of the present invention.
FIG. 7 is a diagram illustrating experimental results of a forward voltage and light output of the light emitting devices of FIG. 6.
FIG. 8 is a diagram illustrating experimental results of light conversion efficiency of the light emitting devices of FIG. 6.
9 is a view showing a light emitting device according to a second embodiment of the present invention.
10 is a view showing a light emitting device according to a third embodiment of the present invention.
11 is a view schematically showing a light emitting device according to a fourth embodiment of the present invention.
12 is a view schematically showing a light emitting device according to a fifth embodiment of the present invention.
13 is a view showing conventional light emitting devices and the light emitting device of the present invention.
FIG. 14 is a diagram illustrating experimental results on light conversion efficiency and light output of the light emitting devices of FIG. 13.
Claims (10)
Priority Applications (1)
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KR20080094182A KR100998322B1 (en) | 2008-09-25 | 2008-09-25 | Light emitting diode |
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KR20080094182A KR100998322B1 (en) | 2008-09-25 | 2008-09-25 | Light emitting diode |
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KR100998322B1 KR100998322B1 (en) | 2010-12-03 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101066286B1 (en) * | 2010-09-15 | 2011-09-20 | (주)더리즈 | Light-emitting device |
US20110272730A1 (en) * | 2010-05-06 | 2011-11-10 | Theleds Co., Ltd. | Light emitting device |
WO2011142619A2 (en) * | 2010-05-13 | 2011-11-17 | 주식회사 에피밸리 | Group iii nitride semiconductor light emitting element |
WO2012165764A1 (en) * | 2011-06-03 | 2012-12-06 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101179605B1 (en) | 2011-02-25 | 2012-09-05 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
KR101241363B1 (en) | 2011-06-22 | 2013-05-14 | 인제대학교 산학협력단 | Nitride semiconductor light-emitting device and manufacturing method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6344665B1 (en) | 2000-06-23 | 2002-02-05 | Arima Optoelectronics Corp. | Electrode structure of compound semiconductor device |
KR100661913B1 (en) * | 2006-01-20 | 2006-12-28 | (주)에피플러스 | Disposition structure of electrode in small-sized led |
KR100809220B1 (en) | 2007-02-01 | 2008-02-29 | 삼성전기주식회사 | Semiconductor light emitting device |
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2008
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110272730A1 (en) * | 2010-05-06 | 2011-11-10 | Theleds Co., Ltd. | Light emitting device |
WO2011142619A2 (en) * | 2010-05-13 | 2011-11-17 | 주식회사 에피밸리 | Group iii nitride semiconductor light emitting element |
WO2011142619A3 (en) * | 2010-05-13 | 2012-04-26 | 주식회사 에피밸리 | Group iii nitride semiconductor light emitting element |
KR101066286B1 (en) * | 2010-09-15 | 2011-09-20 | (주)더리즈 | Light-emitting device |
WO2012165764A1 (en) * | 2011-06-03 | 2012-12-06 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
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