KR20100029947A - Test mode signal generation circuit and test apparatus using the same - Google Patents
Test mode signal generation circuit and test apparatus using the same Download PDFInfo
- Publication number
- KR20100029947A KR20100029947A KR1020080088659A KR20080088659A KR20100029947A KR 20100029947 A KR20100029947 A KR 20100029947A KR 1020080088659 A KR1020080088659 A KR 1020080088659A KR 20080088659 A KR20080088659 A KR 20080088659A KR 20100029947 A KR20100029947 A KR 20100029947A
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- test
- test mode
- mode signal
- enable
- Prior art date
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/10—Test algorithms, e.g. memory scan [MScan] algorithms; Test patterns, e.g. checkerboard patterns
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/36—Data generation devices, e.g. data inverters
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- Semiconductor Integrated Circuits (AREA)
Abstract
Description
The present invention relates to a test mode signal generation circuit, and a test mode signal generation circuit and a test apparatus including the same that can increase the convenience of the test.
As semiconductor memory devices become more and more high-density, defect rates also increase rapidly. Therefore, a test is performed to verify a defect of the semiconductor memory device before the semiconductor memory device is produced and sold as a product. The test is performed by operating a plurality of test modes to reduce test time and to create and test various situations.
1 is a view showing a test mode signal generation circuit according to the prior art.
The test mode signal generation circuit according to the related art includes a PMOS transistor Pm, an NMOS transistor Nm, and a
The operation of the test mode signal generation circuit according to the prior art is as follows. First, when the reset signal RESET is initially applied to the gate of the PMOS transistor Pm, the
Conventionally, a plurality of test mode signal generation circuits as described above are provided to generate a plurality of test mode signals TM. 2 is an operation timing diagram of a test mode signal according to the prior art.
In FIG. 2, it can be seen that the first to third test signals TEST1, TEST2, and TEST3 are applied to enable the first to third test mode signals TM1, TM2, and TM3. The first to third test mode signals TM1, TM2, and TM3 are enabled to enter the respective test modes to perform a test. After that, the reset signal RESET is applied to terminate the test while disabling all of the first to third test mode signals TM1, TM2, and TM3.
As described above, in the prior art, while entering a plurality of test modes and performing a test, the test is terminated through one reset signal at the same time. In this case, in order to end a test mode in which sufficient tests have been performed, a problem arises that the test mode in which sufficient tests have not yet been performed must be terminated together.
Therefore, in order to perform a test that has not been sufficiently performed, it is necessary to enter the test mode again, which increases the test time and causes various problems in that various tests cannot be performed individually.
In order to solve the above problems, an object of the present invention is to provide a test mode signal generation circuit and a generation method that can enable and disable each test mode signal individually.
According to an exemplary embodiment of the present invention, a test mode signal generation circuit may include an enable unit configured to generate an enable signal for enabling or disabling a test mode signal in response to a test signal; And a test mode signal generator configured to perform a latch operation in response to the test signal and to receive the enable signal and generate the test mode signal. It includes.
In addition, the test mode signal generation method according to an embodiment of the present invention comprises the first step of enabling the test mode signal by applying a test signal; And disabling the test mode signal by applying the test signal again. It includes.
In addition, the test apparatus according to an embodiment of the present invention may enable the first test mode signal when the first test signal is applied, and disable the first test mode signal when the first test signal is applied again. 1 test mode signal generation circuit; And a second test mode signal generation circuit for enabling the second test mode signal when a second test signal is applied and disabling the first test mode signal when the second test signal is applied again. It includes.
According to the present invention, it is possible to enable or disable the test mode signal by using the same test signal, thereby reducing the test time and the various test modes can be sufficiently performed individually.
3 is a circuit diagram illustrating a test mode signal generation circuit according to an exemplary embodiment of the present invention. As shown in FIG. 3, the test mode signal generation circuit according to the embodiment of the present invention includes an enable
The enable
The test
The test mode signal generation circuit according to the embodiment of the present invention may further include a
A detailed configuration of a test mode signal generation circuit according to an embodiment of the present invention will be described with reference to FIG. 3.
The enable
The test
The
4 is an operation timing diagram of a test mode signal generation circuit according to an embodiment of the present invention. The operation of the test mode signal generation circuit according to the embodiment of the present invention will be described with reference to FIG. 4.
When the reset signal RESET is initially enabled, the PMOS transistor Pm receiving the signal RESETB in which the reset signal RESET is inverted is turned on. A high level pulse signal corresponding to an external voltage VDD is applied to the second inverter IV2 through the turned on PMOS transistor Pm, and the second inverter IV2 is a pulse signal of the high level. Inverts to generate a test mode signal TM that is disabled to low.
Thereafter, the test signal TEST is enabled to enable the test mode signal TM so that the test can be performed. When the test signal TEST is enabled high, the first tree state inverter TIV1 constituting the enable switching
When the test signal TEST is enabled, since the second tree state inverter TIV2 constituting the
Since the test signal TEST is a high level pulse signal, soon after the test mode signal TM is enabled, the first tree state inverter TIV1 is turned off and the second tree state inverter TIV2 is turned off. Is turned on. Accordingly, the test
After that, when the test is terminated, the test signal TEST is once again enabled. When the test signal TEST is enabled again, the first tree state inverter TIV1 is turned on and the second tree state inverter TIV2 is turned off. Since the
The present invention may enable and maintain a test mode signal by applying a test signal, and may disable the test mode signal by applying the same test signal once again.
For example, a plurality of test mode signal generation circuits may be provided in a semiconductor memory device. When the test is performed using the three test modes, the semiconductor memory device may include the three test mode signal generation circuits. First to third test signals are input to each test mode signal generation circuit, and generate first to third test mode signals, respectively.
5 is an operation timing diagram of a test mode signal when an embodiment of the present invention is applied.
As shown in FIG. 5, when the first test signal TEST1 is first applied, the first test mode signal TM1 is enabled, and then second and third test signals TEST2 and TEST3 are sequentially applied. The two test mode signal TM2 and the third test mode signal TM3 are enabled. Thereafter, the second test signal, the first test signal, and the third test signal TEST2, TEST1, and TEST3 are applied again to the second test mode signal TM2, the first test mode signal TM1, and the third test. The mode signal TM3 is in turn disabled.
That is, in the prior art, the test signals TTM1, TEST2, and TEST3 are identical to the test signals TEST1, TEST2, and TEST3, whereas the test mode signals TM1, TM2, and TM3 are terminated by applying the reset signal RESET. It can be seen that the mode signals TM1, TM2, TM3 can be disabled at a desired timing. In addition, the test mode signal TM may be collectively disabled by applying the reset signal RESET.
Although the semiconductor memory device has been described above by way of example, the present invention is not limited thereto. The test mode signal generation circuit according to the present invention can be used not only in the semiconductor memory device but also in all electronic fields for performing a test using the test mode.
Test mode signal generation method according to an embodiment of the present invention is as follows. In the test mode signal generation method according to an exemplary embodiment of the present invention, the test mode signal is generated by first applying the test signal TEST to enable the test mode signal TM and again applying the same test signal TEST to the test mode signal. And a second step of disabling (TM).
The method of generating a test mode signal according to an embodiment of the present invention may further include initializing the test mode signal TM to a disabled state by applying a reset signal RESET before the first step. The method may further include disabling the test mode signal TM by applying a reset signal RESET before the step 2 is performed.
In addition, the test mode signal generation method according to an embodiment of the present invention may further comprise the step of latching the enable state of the test mode signal (TM) before the start of the second step after the first step ends.
By enabling and disabling each test mode at an individual timing with only each test signal without using the reset signal collectively, various tests can be performed sufficiently and test time can be shortened. The present invention can be understood as follows.
As those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features, the embodiments described above should be understood as illustrative and not restrictive in all aspects. Should be. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.
1 is a circuit diagram of a test mode signal generation circuit according to the prior art;
2 is an operation timing diagram of a test mode signal applying the prior art;
3 is a circuit diagram of a test mode signal generation circuit according to an embodiment of the present invention;
4 is an operation timing diagram of a test mode signal generation circuit according to an embodiment of the present invention;
5 is an operation timing diagram of a test mode signal to which the present invention is applied.
<Description of the symbols for the main parts of the drawings>
100: enable unit 110: enable switching unit
200: test mode signal generation unit 210: latch control unit
300: reset unit
Claims (29)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080088659A KR20100029947A (en) | 2008-09-09 | 2008-09-09 | Test mode signal generation circuit and test apparatus using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080088659A KR20100029947A (en) | 2008-09-09 | 2008-09-09 | Test mode signal generation circuit and test apparatus using the same |
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Publication Number | Publication Date |
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KR20100029947A true KR20100029947A (en) | 2010-03-18 |
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KR1020080088659A KR20100029947A (en) | 2008-09-09 | 2008-09-09 | Test mode signal generation circuit and test apparatus using the same |
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KR (1) | KR20100029947A (en) |
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2008
- 2008-09-09 KR KR1020080088659A patent/KR20100029947A/en not_active Application Discontinuation
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