KR20100029532A - Wafer inspection method - Google Patents

Wafer inspection method Download PDF

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KR20100029532A
KR20100029532A KR1020080088352A KR20080088352A KR20100029532A KR 20100029532 A KR20100029532 A KR 20100029532A KR 1020080088352 A KR1020080088352 A KR 1020080088352A KR 20080088352 A KR20080088352 A KR 20080088352A KR 20100029532 A KR20100029532 A KR 20100029532A
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pattern
image data
inspection
wafer
target pattern
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KR100997882B1 (en
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김주환
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주식회사 힘스
김주환
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: A wafer pattern inspecting method is provided to prevent a test failure from being generated by comparing the result of taking a photograph of another pattern with the result of comparing an image data with an image data of a reference pattern saved in a memory. CONSTITUTION: A wafer pattern inspecting method includes a process of taking a photograph of a pattern for test formed in a wafer(1) by using a camera(20). The image data of the reference pattern saved in a memory(30) is compared with the image data of an inspection target pattern in a first stage. A comparison target pattern adjacent to the inspection target pattern is taken a photograph. The image data of the comparison target pattern is compared with the result calculated in the first stage.

Description

웨이퍼 패턴 검사방법{wafer inspection method}Wafer inspection method

본 발명은 웨이퍼의 전체 면 중에서, 패턴의 형성위치에 따른 영상데이터의 왜곡, 또는, 메모리에 저장된 표준패턴의 영상데이터의 오류에 의해, 검사오류가 발생되는 것을 방지할 수 있도록 된 새로운 웨이퍼 패턴 검사방법에 관한 것이다.According to the present invention, a new wafer pattern inspection can be prevented from occurring an inspection error due to distortion of image data according to a pattern formation position or an error of image data of a standard pattern stored in a memory. It is about a method.

일반적으로, 반도체 제조에 사용되는 웨이퍼는 도 1에 도시한 바와 같이, 원판형상으로 구성되며, 상면에 다수개의 집적회로 패턴(1a)이 형성되어, 각각의 패턴(1a)에 따라 웨이퍼를 잘라내어 반도체를 제작한다.In general, as shown in FIG. 1, a wafer used in semiconductor manufacturing is formed in a disk shape, and a plurality of integrated circuit patterns 1a are formed on an upper surface thereof, and the wafer is cut out according to each pattern 1a to form a semiconductor. To produce.

한편, 웨이퍼(1)를 잘라내기 전에 웨이퍼(1)에 형성된 패턴(1a)의 결함 유무를 검사하는 패턴 검사장치는 웨이퍼(1)의 상면에 레이저발생장치(10)에서 출력된 레이저를 조사하고, 웨이퍼(1)의 상측에 설치된 카메라(20)를 이용하여 웨이퍼(1)의 패턴(1a)을 촬영한 후 촬영된 패턴(1a)의 영상을 분석하여 패턴(1a)에 결함이 있는지를 검사한다.On the other hand, the pattern inspection apparatus for inspecting the presence or absence of defects of the pattern 1a formed on the wafer 1 before cutting the wafer 1 irradiates the laser output from the laser generator 10 on the upper surface of the wafer 1 After photographing the pattern 1a of the wafer 1 by using the camera 20 installed on the upper side of the wafer 1, an image of the photographed pattern 1a is analyzed to check whether the pattern 1a is defective. do.

이때, 상기 패턴 검사장치에는, 패턴(1a)의 결함유무를 자동으로 판단하는 판별유닛(40)이 구비된다. 상기 판별유닛(40)은 검사의 기준이 되는 표준패턴의 영상데이터가 저장된 메모리(30)가 구비되어, 카메라(20)를 이용하여 웨이퍼(1)에 형성된 패턴(1a)중에 선택된 한개의 패턴(1a), 즉, 검사대상 패턴을 촬영하면, 촬영된 검사대상 패턴의 영상데이터와 메모리(30)에 저장된 표준패턴의 영상데이터를 비교하여 양자에 차이가 있을 경우 검사대상 패턴에 결함이 있는 것으로 판별할 수 있다.At this time, the pattern inspection apparatus is provided with a determination unit 40 for automatically determining the presence or absence of a defect in the pattern 1a. The determination unit 40 includes a memory 30 in which image data of a standard pattern, which is a standard of inspection, is stored, so that one pattern selected from the patterns 1a formed on the wafer 1 by using the camera 20 is formed. 1a) In other words, when photographing the inspection target pattern, the image data of the photographed inspection target pattern and the image data of the standard pattern stored in the memory 30 are compared to determine that the inspection target pattern is defective if there is a difference between them. can do.

그리고, 이러한 검사과정을 반복하여, 웨이퍼(1)에 형성된 다수개의 패턴(1a)을 순차적으로 검사할 수 있다.In addition, the inspection process may be repeated to sequentially inspect the plurality of patterns 1a formed on the wafer 1.

한편, 이러한 웨이퍼(1)는 이론적으로는 상면이 완벽한 평면을 이루어, 패턴(1a)에 결함이 없을 경우, 웨이퍼(1)의 상면에 형성된 임의의 패턴(1a)을 촬영할 경우, 항상 동일한 영상데이터를 얻을 수 있어야 한다. On the other hand, such a wafer 1 has a theoretically perfect upper surface, and when the pattern 1a is free of defects, when photographing any pattern 1a formed on the upper surface of the wafer 1, the same image data is always the same. You should be able to get

그러나, 사실상 웨이퍼(1)는 상면이 완벽한 평면을 이루지 못하므로, 웨이퍼(1)에 형성된 패턴(1a)을 촬영한 영상데이터에 왜곡이 일어나게 되며, 이러한 이유로 정상적인 패턴(1a)을 결함이 있는 패턴(1a)으로 판독하는 검사오류를 일으키는 경우가 발생되었다. However, since the upper surface of the wafer 1 does not actually form a perfect plane, distortion occurs in the image data photographing the pattern 1a formed on the wafer 1, which is why the normal pattern 1a is defective. A case of causing a test error to be read in (1a) occurred.

즉, 웨이퍼(1)의 외곽부분에 형성된 패턴(1a)중에서 하나를 검사대상 패턴으로 설정하여 촬영을 할 경우 영상데이터에 왜곡이 발생되어, 해당 검사대상 패턴에 결함이 없을 경우에도 촬영된 영상데이터가 메모리(30)에 저장된 표준패턴의 영상데이터와 달라, 판별유닛(40)이 해당 패턴(1a)을 결함이 있는 패턴(1a)으로 판별하 는 경우가 발생되었으며, 이러한 검사오류는 웨이퍼(1)의 중앙부에 형성된 패턴(1a)보다 웨이퍼(1)의 둘레부에 가까운 패턴(1a)에서 주로 발생되었다.That is, when photographing by setting one of the patterns 1a formed on the outer portion of the wafer 1 as the inspection target pattern, distortion occurs in the image data, and the image data photographed even when there is no defect in the inspection target pattern. Is different from the image data of the standard pattern stored in the memory 30, the discrimination unit 40 discriminates the pattern 1a as a defective pattern 1a. The pattern 1a is mainly generated in the pattern 1a closer to the periphery of the wafer 1 than the pattern 1a formed in the central portion of the wafer 1).

또한, 이러한 이유이외에, 메모리(30)에 저장된 표준패턴의 영상데이터에 오류가 발생되어, 검사결과에 오류가 발생되는 경우도 발생되었다.In addition to this reason, an error occurs in the image data of the standard pattern stored in the memory 30, and an error occurs in the inspection result.

본 발명은 상기의 문제점을 해결하기 위한 것으로서, 패턴의 형성위치에 따른 영상데이터의 왜곡, 또는, 메모리(30)에 저장된 표준패턴의 영상데이터의 오류에 의해, 검사오류가 발생되는 것을 방지할 수 있도록 된 새로운 웨이퍼 패턴 검사방법을 제공함에 그 목적이 있다.The present invention is to solve the above problems, it is possible to prevent the occurrence of the inspection error due to the distortion of the image data according to the position of the pattern formation, or the error of the image data of the standard pattern stored in the memory 30. The purpose is to provide a new method for inspecting wafer patterns.

상기한 목적을 달성하기 위한 본 발명은, 카메라(20)를 이용하여 웨이퍼(1)에 형성된 검사대상 패턴을 촬영하는 1차 촬영단계와;The present invention for achieving the above object, the first photographing step of photographing the inspection target pattern formed on the wafer (1) using the camera 20;

촬영된 검사대상 패턴의 영상데이터(B)와 메모리(30)에 저장된 표준패턴의 영상데이터(A)를 비교하는 1차 비교단계와;A first comparison step of comparing the image data B of the photographed inspection target pattern with the image data A of the standard pattern stored in the memory 30;

상기 검사대상 패턴에 인접된 비교대상 패턴을 촬영하는 2차 촬영단계와;A second photographing step of photographing a comparison target pattern adjacent to the inspection target pattern;

2차 촬영단계에서 촬영된 비교대상 패턴의 영상데이터(C)와 1차 비교단계에서 계산된 결과를 비교하는 2차 비교단계를 포함하는 것을 특징으로 하는 웨이퍼 패턴 검사방법이 제공된다.A wafer pattern inspection method is provided, comprising a second comparison step of comparing the image data C of the comparison target pattern photographed in the second photographing step and a result calculated in the first comparison step.

제 1항에 있어서, 상기 패턴 검사단계에서 상기 검사대상 패턴의 다음번에 검사할 패턴(1a)을 비교대상 패턴으로 설정하는 것을 특징으로 하는 웨이퍼 패턴 검사방법.The wafer pattern inspection method according to claim 1, wherein in the pattern inspection step, a pattern (1a) to be inspected next to the inspection target pattern is set as a comparison target pattern.

본 발명에 따른 웨이퍼 패턴 검사방법에 따르면, 검사대상 패턴을 촬영하고, 촬영된 영상데이터를 메모리(30)에 저장된 표준패턴의 영상데이터와 1차 비교한 후, 검사대상 패턴에 인접된 다른 패턴을 추가로 촬영하여, 1차 비교 결과와 재차 비교하로써, 패턴의 형성위치에 따른 영상의 왜곡, 또는, 메모리(30)에 저장된 표준패턴의 영상데이터의 오류에 의해, 검사오류가 발생되는 것을 방지할 수 있는 장점이 있다.According to the wafer pattern inspection method according to the present invention, after photographing the inspection target pattern, and first compared the photographed image data with the image data of the standard pattern stored in the memory 30, another pattern adjacent to the inspection target pattern By further taking a picture and comparing the result with the primary comparison result again, it is possible to prevent the inspection error from occurring due to the distortion of the image according to the position at which the pattern is formed or the error of the image data of the standard pattern stored in the memory 30. There are advantages to it.

이하, 본 발명을 첨부된 예시도면에 의거하여 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 따른 웨이퍼 패턴 검사방법을 실시하기 위한 패턴 검사장치를 도시한 것으로, 레이저가 반사되는 방향과 카메라(20)의 방향이 서로 다르게 배치된 암시야(dark field) 검사장치를 예시한 것이다. 이에 따르면, 패턴 검사장치는 웨이퍼(1)의 상면에 레이저를 조사하는 레이저발생장치(10)와, 레이저발생장치(10)에 의해 레이저가 조사된 검사대상 패턴을 촬영하는 카메라(20)와, 표준패턴의 영상데이터(A)가 저장된 메모리(30)와, 카메라(20)에 의해 촬영된 검사대상 패턴의 영상데이터(B)와 메모리(30)에 저장된 표준패턴의 영상데이터(A)를 비교하여 양자에 차이가 있을 경우 촬영된 패턴(1a)에 결함이 있는 것으로 판별하는 판별유닛(40)이 구비된다. 또한, 상기 패턴 검사장치에는 상기 웨이퍼(1)가 올려지는 거 치대(50)와 상기 거치대(50)를 위치이동시키는 구동장치(60) 및 제어유닛(70)이 구비되어, 웨이퍼(1)를 거치대(50)에 올려놓은 상태에서 거치대(50)를 위치이동시키므로써, 상기 카메라(20)가 웨이퍼(1)에 형성된 다수의 패턴(1a)을 순차적으로 촬영할 수 있도록 구성된다.FIG. 2 illustrates a pattern inspection apparatus for implementing a wafer pattern inspection method according to the present invention, and illustrates a dark field inspection apparatus in which a direction in which a laser is reflected and a camera 20 are arranged differently from each other. It is. According to this, the pattern inspection apparatus includes a laser generator 10 for irradiating a laser onto the upper surface of the wafer 1, a camera 20 for photographing an inspection target pattern irradiated with the laser by the laser generator 10, and The memory 30 storing the image data A of the standard pattern is compared with the image data B of the inspection target pattern photographed by the camera 20 and the image data A of the standard pattern stored in the memory 30. Thus, when there is a difference between the two is provided with a determination unit 40 for determining that the photographed pattern (1a) is defective. In addition, the pattern inspection apparatus is provided with a drive unit 60 and a control unit 70 for moving the mounting table 50 on which the wafer 1 is placed, and the mounting table 50. By moving the holder 50 in a state where it is placed on the holder 50, the camera 20 is configured to sequentially photograph a plurality of patterns 1a formed on the wafer 1.

그리고, 이를 이용한 본 발명에 따른 웨이퍼 패턴 검사방법은 도 3 및 도 4에 도시한 바와 같이, 카메라(20)를 이용하여 웨이퍼(1)에 형성된 검사대상 패턴을 촬영하는 1차 촬영단계와; 촬영된 검사대상 패턴의 영상데이터(B)와 메모리(30)에 저장된 표준패턴의 영상데이터(A)를 비교하는 1차 비교단계와; 검사대상 패턴에 인접된 비교대상 패턴을 촬영하는 2차 촬영단계와; 2차 촬영단계에서 촬영된 비교대상 패턴의 영상데이터(C)와 1차 비교단계에서 계산된 결과를 비교하는 2차 비교단계로 이루어진다.In addition, the wafer pattern inspection method according to the present invention using the same, as shown in Figures 3 and 4, the first photographing step of photographing the inspection target pattern formed on the wafer 1 using the camera 20; A first comparison step of comparing the image data B of the photographed inspection target pattern with the image data A of the standard pattern stored in the memory 30; A secondary photographing step of photographing a comparison target pattern adjacent to the inspection target pattern; A second comparison step is performed in which the image data C of the comparison target pattern photographed in the second photographing step is compared with the result calculated in the first comparison step.

상기 1차 촬영단계는 상기 패턴 검사장치의 거치대(50)에 웨이퍼(1)를 올려놓은 후, 구동장치(60)를 작동시켜 검사하고자 하는 검사대상 패턴에 상기 레이저발생장치(10)에서 출력된 레이저가 조사되도록 함과 동시에, 상기 카메라(20)를 이용하여 검사대상 패턴의 영상을 촬영하는 단계이다. 이때, 카메라(20)에 의해 촬영된 검사대상 패턴의 영상데이터(B)는 상기 메모리(30)에 저장된다.In the first photographing step, the wafer 1 is placed on the holder 50 of the pattern inspection apparatus, and then the driving device 60 is operated to output the inspection pattern to the inspection target pattern to be inspected. At the same time as the laser is irradiated, it is the step of taking an image of the inspection target pattern by using the camera 20. In this case, the image data B of the inspection target pattern photographed by the camera 20 is stored in the memory 30.

상기 1차 비교단계는 도 3에 도시한 바와 같이, 전술한 1차 촬영단계에서 촬 영된 검사대상 패턴의 영상데이터(B)와 메모리(30)에 미리 저장된 표준패턴의 영상데이터(A)를 비교하여, 2개의 데이터에 일치되지 않는 부분이 발생될 경우, 검사대상 패턴에 결함의 가능성이 있는 것으로 판단하여, 결함의 가능성이 있는 부분의 좌표 및 영상을 포함하는 결함데이터(E)를 추출하여 메모리(30)에 저장하는 단계이다.In the first comparison step, as shown in FIG. 3, the image data B of the inspection target pattern photographed in the above-described first photographing step is compared with the image data A of the standard pattern previously stored in the memory 30. When a portion that does not coincide with the two data is generated, it is determined that there is a possibility of a defect in the pattern to be inspected, and the defect data E including the coordinates and the image of the portion of the possibility of the defect is extracted and stored in the memory. The step of storing in 30.

상기 2차 촬영단계는 1차 촬영단계에서 촬영된 검사대상 패턴에 가장 가까운 위치에 형성된 다른 패턴(1a), 즉, 비교대상 패턴을 촬영하여, 촬영된 영상데이터(C)를 메모리(30)에 저장하는 단계이다.In the second photographing step, another pattern 1a formed at a position closest to the inspection object pattern photographed in the first photographing step, that is, a comparison object pattern is photographed, and the photographed image data C is stored in the memory 30. Save step.

이때, 상기 비교대상 패턴은 상기 1차 촬영단계에서 촬영된 검사대상 패턴의 다음번에 검사할 패턴(1a)을 비교대상 패턴으로 지정한다. 즉, 도 1에 도시한 바와 같이, 웨이퍼(1)에 형성된 패턴(1a)을 NO 1부터 순차적으로 검사한다고 할 때, NO 1 패턴을 검사대상 패턴으로 지정하면, NO 2 패턴(1a)이 NO 1 패턴(1a)의 비교대상 패턴이 된다.In this case, the comparison target pattern designates a pattern 1a to be inspected next to the inspection target pattern photographed in the first photographing step as the comparison target pattern. That is, as shown in FIG. 1, when the pattern 1a formed on the wafer 1 is inspected sequentially from NO 1, if the NO 1 pattern is designated as the inspection target pattern, the NO 2 pattern 1a is NO. It becomes a pattern to be compared of one pattern 1a.

상기 2차 비교단계는 도 4에 도시한 바와 같이, 1차 비교단계에서 추출된 결함데이터(E)를 2차 촬영단계에서 촬영된 비교대상 패턴의 영상데이터(C)에 대입하여, 결함데이터(E)가 비교대상 패턴의 영상데이터(C)를 비교하는 단계이다.In the second comparison step, as shown in FIG. 4, the defect data E extracted in the first comparison step is substituted into the image data C of the comparison target pattern photographed in the second photographing step, and the defect data ( E) is a step of comparing the image data (C) of the comparison target pattern.

이를 자세히 설명하면, 1차 비교단계에서, 비교대상 패턴의 영상데이터(C)와 샘플패턴의 영상데이터(A)에 차이가 있을 경우, 차이가 있는 부분을 결함(D)으로 인식하여 이를 결함데이터(E)로 분류하여 메모리(30)에 저장하고, 2차 비교단계에서는 1차 비교단계에서 인식된 결함(D)과 동일한 결함이 비교대상 패턴 영상데이터(C)의 동일한 위치에 존재하는지를 확인하여, 비교결과에 따라 검사대상 패턴의 결함여부를 판단한다. In detail, in the first comparison step, when there is a difference between the image data (C) of the comparison target pattern and the image data (A) of the sample pattern, the difference is recognized as a defect (D) and the defect data is recognized. Classified as (E) and stored in the memory 30, and in the second comparison step, it is checked whether the same defect as the defect D recognized in the first comparison step exists at the same position of the pattern image data C to be compared. Based on the comparison result, it is determined whether the inspection target pattern is defective.

즉, 도 4에 도시한 바와 같이, 1차 비교단계에서 인식된 결함(D)과 동일한 결함(D)이 비교대상 패턴의 영상데이터(C)에도 존재할 경우, 검사대상 패턴에서 결함으로 판단된 부위는 실제적인 결함이 아니라, 영상의 왜곡 또는 표준패턴의 영상데이터(A)에 의해 발생된 것으로 판단하고, 검사대상 패턴은 결함이 없는 정상 패턴(1a)으로 판단하며, 도 5에 도시한 바와 같이, 1차 비교단계에서 인식된 결함(D)이 비교대상 패턴의 영상데이터(C)에 존재하지 않을 경우 검사대상 패턴에 결함이 있는 것으로 판단한다.That is, as shown in FIG. 4, when the same defect (D) as the defect (D) recognized in the first comparison step exists in the image data (C) of the pattern to be compared, the site determined as a defect in the inspection target pattern Is determined by the distortion of the image or the image data A of the standard pattern, not the actual defect, and the inspection target pattern is determined as the normal pattern 1a without the defect, as shown in FIG. If the defect D recognized in the first comparison step does not exist in the image data C of the comparison target pattern, it is determined that the inspection target pattern is defective.

이러한 2차 비교단계는 서로 다른 패턴(1a)에 발생되는 결함은 동일한 위치에 반복적으로 발생되지 않는 다는 가정을 기초로 한다.This secondary comparison step is based on the assumption that defects occurring in different patterns 1a are not repeatedly generated at the same position.

그리고, 이러한 과정을 반복하여, 웨이퍼(1)상에 형성된 다수개의 패턴(1a)의 결함을 순차적으로 검사할 수 있다. 이때, 2차 촬영단계에서 지정된 NO 2 패턴(1a)은 NO 1 패턴(1a)의 검사시 비교대상 패턴으로 지정되어 촬영되므로, NO 2 패턴(1a)의 검사시에는 NO 2 패턴(1a)의 영상을 재차 촬영하지 않고, 2차 촬영단계에서 촬영된 영상을 활용한다.Then, by repeating this process, the defects of the plurality of patterns 1a formed on the wafer 1 can be inspected sequentially. At this time, since the NO 2 pattern 1a designated in the secondary photographing step is photographed by being designated as a comparison target pattern when the NO 1 pattern 1a is inspected, the NO 2 pattern 1a is determined when the NO 2 pattern 1a is inspected. Instead of taking the image again, the image taken in the second shooting step is used.

이와같이 구성된 웨이퍼 패턴 검사방법에 따르면, 메모리(30)에 저장된 표준패턴의 영상데이터(A)와, 카메라(20)에 의해 촬영된 검사대상 패턴의 영상데이터(B)를 1차로 비교한 후, 추가적으로 촬영된 비교대상 패턴의 영상데이터(C)를 추가로 비교하므로, 패턴(1a)의 형성위치에 따른 영상데이터의 왜곡, 또는, 메모리(30)에 저장된 표준패턴의 영상데이터(A)의 오류에 의해, 검사오류가 발생되고, 검사오류에 따라 정상적인 패턴(1a)을 결함이 있는 것으로 판단하여 폐기하는 것을 방지할 수 있는 장점이 있다.According to the wafer pattern inspection method configured as described above, the image data A of the standard pattern stored in the memory 30 and the image data B of the inspection target pattern photographed by the camera 20 are primarily compared, and then additionally Since the image data C of the comparison target pattern photographed is further compared, the image data C according to the formation position of the pattern 1a or the error of the image data A of the standard pattern stored in the memory 30 can be avoided. As a result, a test error is generated, and according to the test error, the normal pattern 1a is determined to be defective and thus, there is an advantage of preventing disposal.

특히, 상기 검사대상 패턴에 가장 인접된 패턴(1a)을 비교대상 패턴으로 설정하므로써, 검사대상 패턴과 비교대상 패턴간에 웨이퍼(1)의 휨 및 가장가리 효과등에 의해 발생되는 오차를 최소화할 수 있으며, 검사의 오류를 최소화할 수 있는 장점이 있다.In particular, by setting the pattern (1a) closest to the inspection target pattern as the comparison target pattern, an error caused by the warpage and the edge effect between the inspection target pattern and the comparison target pattern can be minimized. This has the advantage of minimizing the error of inspection.

그리고, 제 1항에 있어서, 패턴 검사단계에서 상기 검사대상 패턴의 다음번에 검사할 패턴(1a)을 상기 비교대상 패턴으로 설정하므로써, 검사대상 패턴의 영상을 한번만 촬영할 수 있어서, 검사속도를 신속하게 진행할 수 있는 장점이 있다.The method according to claim 1, wherein in the pattern inspection step, by setting the pattern 1a to be inspected next to the inspection target pattern as the comparison target pattern, the image of the inspection target pattern can be taken only once, so that the inspection speed can be quickly increased. There is an advantage to proceed.

전술한 실시예에 따르면, 본 발명의 패턴 검사방법은 암시야 검사장치를 이용하여 실시되는 것을 예시하였으나, 레이저가 반사되는 방향과 카메라(20)의 방향이 일치되는 명시야(bright sight) 검사장치를 이용하는 것도 가능하다.According to the above-described embodiment, the pattern inspection method of the present invention has been exemplified by using a dark field inspection apparatus, but the bright sight inspection apparatus in which the direction in which the laser is reflected and the direction of the camera 20 coincide with each other. It is also possible to use.

도 1은 패턴이 형성된 웨이퍼를 도시한 참고도,1 is a reference diagram showing a wafer on which a pattern is formed;

도 2는 본 발명에 따른 웨이퍼 패턴 검사방법을 실시하기 위한 검사장치를 도시한 참고도,2 is a reference diagram showing an inspection apparatus for performing a wafer pattern inspection method according to the present invention;

도 3 내지 도 5는 본 발명에 따른 웨이퍼 패턴 검사방법을 설명하기 위한 참고도이다.3 to 5 are reference diagrams for explaining the wafer pattern inspection method according to the present invention.

Claims (2)

카메라(20)를 이용하여 웨이퍼(1)에 형성된 검사대상 패턴을 촬영하는 1차 촬영단계와;A first photographing step of photographing an inspection object pattern formed on the wafer 1 using the camera 20; 촬영된 검사대상 패턴의 영상데이터(B)와 메모리(30)에 저장된 표준패턴의 영상데이터(A)를 비교하는 1차 비교단계와;A first comparison step of comparing the image data B of the photographed inspection target pattern with the image data A of the standard pattern stored in the memory 30; 상기 검사대상 패턴에 인접된 비교대상 패턴을 촬영하는 2차 촬영단계와;A second photographing step of photographing a comparison target pattern adjacent to the inspection target pattern; 2차 촬영단계에서 촬영된 비교대상 패턴의 영상데이터(C)와 1차 비교단계에서 계산된 결과를 비교하는 2차 비교단계를 포함하는 것을 특징으로 하는 웨이퍼 패턴 검사방법.And a second comparison step of comparing the image data (C) of the comparison target pattern photographed in the second photographing step and the result calculated in the first comparison step. 제 1항에 있어서, 상기 패턴 검사단계에서 상기 검사대상 패턴의 다음번에 검사할 패턴(1a)을 비교대상 패턴으로 설정하는 것을 특징으로 하는 웨이퍼 패턴 검사방법.The wafer pattern inspection method according to claim 1, wherein in the pattern inspection step, a pattern (1a) to be inspected next to the inspection target pattern is set as a comparison target pattern.
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WO2018048843A1 (en) * 2016-09-08 2018-03-15 Corning Incorporated Optical inspection systems and methods for detecting surface defects in a transparent sheet
KR101860393B1 (en) * 2012-02-07 2018-05-23 어플라이드 머티리얼즈 이스라엘 리미티드 A system, a method and a computer program product for cad­based registration

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US5864394A (en) 1994-06-20 1999-01-26 Kla-Tencor Corporation Surface inspection system
JPH11166901A (en) 1997-12-03 1999-06-22 Nikon Corp Inspecting device and method
JP3431567B2 (en) 2000-03-30 2003-07-28 株式会社東芝 Defect inspection device and inspection method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101860393B1 (en) * 2012-02-07 2018-05-23 어플라이드 머티리얼즈 이스라엘 리미티드 A system, a method and a computer program product for cad­based registration
WO2018048843A1 (en) * 2016-09-08 2018-03-15 Corning Incorporated Optical inspection systems and methods for detecting surface defects in a transparent sheet

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