KR20100024049A - Hierarchical structure and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A layered structure and a method for manufacturing the same are provided to minimize or remove after treatment by reducing the size of blocks in the minimum scale area. CONSTITUTION: A layered structure comprises one or more nano objects arranged in a specific pattern. The nano objects have a length of 1~100 nano-meters and are formed in the matrix of the layered structure. The nano object is one of quantum dot, nano sphere, nano particle, nano tube, nano wire, and line pattern.

Description

Hierarchical Structure and Method for Manufacturing the same

The present invention relates to a layered structure and a method of manufacturing the same, and more particularly, the shape of the layered structure, the engineering effect of the layered structure according to the shape, the method of increasing the engineering effect, the method of applying the layered structure to a new material or component And a mass production method of the layered structure.

Since the invention of the Scanning Tunneling Microscope in the 1980s, nano-measurement techniques for measuring unusual phenomena occurring in the nanoscale region having characteristic lengths of 100 nm or less have been rapidly developed. Nano-measurement techniques are now being actively applied to the measurement of specific mechanical, electromagnetic, optical, chemical or thermal properties occurring in the nanoscale region.

Advances in nano-measurement technology have revealed that natural phenomena occur in the nanoscale region unlike those in the macroscopic scale region, and new natural phenomena in the nanoscale region continue to be reported.

In addition, since carbon nanotubes began to receive attention in earnest through Lijima's 1991 paper, various nanomaterials composed of various metals and semiconductors, namely nano wires, nano rods, Nanomaterial technology that applies nanobands or quantum dots in real life is being actively researched.

Meanwhile, South Korea has world class semiconductor process technology, and the critical dimension of semiconductor process is already below 100nm for some devices. This semiconductor process technology provides a way to make nanoscale structures more freely and inexpensively, which opens the possibility of applying nanotechnology results to real life.

The present invention has been completed as a result of continuous research and development by the inventors on the basis of the background art as described above, the problem to be solved by the present invention is a macroscopic scale of excellent characteristics occurring in the nano-scale region It is to provide a layered structure that can be implemented in the structure of the region and a method of manufacturing the same.

The present invention relates to a layered structure, characterized in that at least one or more nano-objects having a characteristic length of a nano-scale region in an internal matrix are arranged by a predetermined pattern.

Preferably, the matrix is characterized in that it is a polymer or a metal.

Also preferably, the characteristic length is characterized in that 1 nm to 100 nm.

Also preferably, the nano object may include a line pattern of a quantum dot, a nano sphere, a nano particle, a nano tube, a nano wire, and a nano scale region. Line Pattern).

And preferably, the pattern is an optical lithography, soft lithography, holographic lithography, nanoimprint, shadow mask and metal transfer printing method. It is characterized in that formed by any one method.

Meanwhile, the present invention relates to a layered structure, in which at least one or more first blocks are arranged in a second pattern in a second matrix inside a second block, and inside the first block. At least one nano-object having a characteristic length of a nano-scale region at a first base of is characterized in that arranged by a constant first pattern.

Preferably, the first base or the second base is a polymer or a metal.

Also preferably, the characteristic length is characterized in that 1 nm to 100 nm.

Also preferably, the nano object may include a line pattern of a quantum dot, a nano sphere, a nano particle, a nano tube, a nano wire, and a nano scale region. Line Pattern).

Also preferably, the first pattern may include optical lithography, soft lithography, holographic lithography, nano imprint, shadow mask, and metal transfer printing. It is characterized in that formed by any one method.

Also preferably, the size of the second block is 5 to 100 times larger than the size of the first block.

Meanwhile, the present invention relates to a layered structure, in which at least one fourth block having a characteristic length of a nano scale region is coupled to an exterior of the first structure in which at least one third block is coupled to each other. It features.

Preferably, the characteristic length is characterized in that 1 nm to 100 nm.

On the other hand, the present invention relates to a method for manufacturing a layered structure, (a) forming a first matrix (Matrix) on the first substrate (Substrate); (b) arranging at least one or more nano objects having a characteristic length of a nano scale region on the first matrix by a constant first pattern; (c) forming a second base on the first pattern of step (b); And (d) separating the first base material to form a first block.

Preferably, the first base or the second base is a polymer or a metal.

Also preferably, the characteristic length is characterized in that 1 nm to 100 nm.

Also preferably, the nano object may include a line pattern of a quantum dot, a nano sphere, a nano particle, a nano tube, a nano wire, and a nano scale region. Line Pattern).

Also preferably, the pattern may be any one of optical lithography, soft lithography, holographic lithography, nano imprint, shadow mask, and metal transfer printing methods. Characterized in that formed by the method.

Also preferably, the step (a) includes (a1) forming a sacrificial layer on the first base material before forming the first base.

Also preferably, the step (d) may include: (d1) forming a PR (Photo Resist) pattern or an inorganic pattern on the second base and then etching; And (d2) removing the PR or the inorganic material.

Also preferably, the PR pattern or the inorganic pattern is formed using an optical lithography or imprint lithography method.

Also preferably, after the step (d), (e) arranging at least one or more of the first blocks on the second base material by a constant second pattern; (f) forming a third base on the second pattern of step (e); And (g) separating the second base material to form a second block.

Also preferably, the step (e) includes (e1) attaching the first block on the second base material using a chuck.

Also preferably, the step (e) includes (e2) forming an adhesion reinforcing layer on the second base material before arranging the first block.

In addition, the adhesion reinforcing layer is characterized in that the self-assembled monolayer (Self-Assembled Monolayer) or a polymer adhesive layer.

And preferably, the size of the second block is characterized in that 5 to 100 times larger than the size of the first block.

Meanwhile, the present invention relates to a method for manufacturing a layered structure, comprising: (A) at least one third block having a characteristic length of a nanoscale region and at least one fourth block larger than the size of the third block; Forming; (B) attaching the fourth block on a third substrate, and attaching the third block on the fourth block; And (C) separating the third base material.

Preferably, the size of the fourth block is 5 to 100 times larger than the size of the third block.

Also preferably, the step (B) may include (B1) attaching the fourth block or the third block onto the third base material or the fourth block using a chuck. do.

Also preferably, the step (B) includes (B2) forming an adhesion reinforcing layer on the third base material before attaching the fourth block.

And preferably, the adhesion reinforcing layer is characterized in that the self-assembled monolayer (Self-Assembled Monolayer) or a polymer adhesive layer.

Effects according to the present invention can be largely divided into three.

First, it provides a method that can utilize the excellent characteristics occurring in the nanoscale region even in the structure of the macroscale region. Second, the present invention provides a method for easily interconnecting or interfacing structures having different size scales regardless of different size scales. Third, there is provided a method for easily manufacturing a part including a three-dimensional shape that is difficult to manufacture in the prior art. Hereinafter, each effect is explained in full detail.

First, the feasibility of achieving excellent properties in macroscopic structures on macroscopic structures has been demonstrated in recent studies on natural structures.

1 shows an example of the hierarchical structure observed in human tendons.

By virtue of the hierarchical structure of FIG. 1, a human tendon can bear very high strain applied from the outside while showing excellent strength. Similar hierarchies are observed not only in human tendons but also in the bones of animals, so that the bones of animals exhibit very good fracture toughness.

This superior fracture toughness has been found to be due to the fact that the hierarchical structure weakens external impacts in spite of defects that may be present inside human tendons or animal bones, and this hierarchical structure is nanoscale as shown in FIG. The basic structure of the region is a structure in which up to six or seven stages are stacked successively.

As another example in which excellent characteristics are expressed by the hierarchical structure, an example of the hierarchical structure formed on the sole of the Gecko lizard is shown in FIG. 2.

Gecko lizards use a hierarchical structure as shown in FIG. 2 to amplify the van der Waals forces occurring in the nanoscale region to the macroscopic scale region. Thereby, the gecko lizard acquires the adhesive force which can freely travel even through the ceiling or the window of a building.

Although the magnitude of adhesion through van der Waals forces in the nanoscale region is very small, the magnitude of adhesion can be increased exponentially by extending to the macroscopic scale region through the hierarchical structure. Through this, the gecko lizard, which weighs only a few hundred grams, creates adhesive force that attaches itself to the ceiling or windows of a building. Conventionally, there is no technique for artificially manufacturing such a hierarchical structure, but according to the present invention, an artificial hierarchical structure that implements excellent characteristics, that is, excellent fracture toughness or adhesive force, may be manufactured.

Second, the present invention provides a method for easily linking structures having different size scales regardless of different size scales.

With the development of nanotechnology, technologies for implementing nanoscale transistors or various NEMS (Nano-Electro-Mechanical-System) systems using nanoscale structures, that is, nanotubes or nanowires, have been developed. There is no technique for linking the structure of the scale region with the structure of the macro scale region.

According to the present invention, the structures of the nanoscale region can be associated with products used in daily life.

Using the present invention, it is possible to link these nanoscale structures with products that can be utilized in everyday life. For example, the layered structure according to the invention can be used to produce a product as shown in FIG. 3. That is, in FIG. 3, the upper silicon MEMS (Microelectromechanical Systems) corresponding to the scale region of several tens of microns or more, the center metal interconnect line corresponding to the scale region of several microns or less, and very high measurement sensitivity are shown. Products can be manufactured incorporating nanowire sensors at the bottom, which correspond to nanometer scale regions.

In Fig. 3, it is preferable to carefully select the material of the adhesive strength increasing layer for the electrical connection between the levels, or to avoid using the adhesive strength increasing layer if possible. If the adhesive strength increasing layer is not used, the adhesive strength may be increased by applying a surface treatment technique such as a plasma treatment technique. This will be described later in detail.

Third, the present invention provides a method for easily manufacturing a part including a three-dimensional shape that is difficult to manufacture in the prior art.

The manufacturing method of 3D parts can be largely classified into additive and subtractive methods. The additive method is a method of manufacturing a three-dimensional component by stacking or assembling basic blocks, for example, stereo lithography or laser sintering. On the other hand, the subtractive method is a method of realizing a desired shape by cutting a huge structure step by step, for example, milling, lathe, electric discharge or optical lithography.

The present invention provides a method of manufacturing a three-dimensional component by stacking or assembling structures for each level as shown in FIG. 3 as an additive manufacturing method having a different concept from the conventional additive method. By using the manufacturing method according to the present invention, it is possible to manufacture a structure including a complex flow channel therein, such as a Conformal Cooling Mold, which cannot be manufactured by a conventional Additive method, and by using blocks of various scale regions. It is possible to improve the pattern resolution while improving productivity compared to the conventional Additive method.

The conventional Additive method is a method of stacking a base structure of a constant size, and as the size of the base structure increases, the production speed increases in proportion to the volume of the base structure, that is, the cube of the size of the base structure. On the other hand, in the case of stacking the basic blocks for each layered level in accordance with the present invention, a structure without a fine pattern change is manufactured using a basic block with a large scale, and a portion with a small pattern change is a basic block with a small scale By using, the production speed can be greatly improved.

In addition, most of the conventional additive methods include post-treatment (polishing or finishing machining) processes due to poor surface resolution, but according to the present invention, the processing resolution of the structure is reduced by reducing the size of the basic block in the minimum scale region. The post-treatment process can be minimized or omitted.

Before describing the details for carrying out the present invention, it should be noted that configurations that are not directly related to the technical gist of the present invention are omitted within the scope of not distracting the technical gist of the present invention.

In addition, the terms or words used in the present specification and claims are consistent with the technical spirit of the present invention on the basis of the principle that the inventor can appropriately define the concept of the term in order to explain the invention in the best way. It should be interpreted as meaning and concept.

Hereinafter, a layered structure and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings.

One aspect of the present invention provides a stratified structure fabricated by a stepwise process as shown in FIG. 4.

In FIG. 4, in the level 1 process, a nano object having a characteristic length (eg, W ₁ ) of a nano scale region is arranged along with a matrix on a substrate.

As illustrated in FIG. 5, the nano object may be a nano object in 0, 1, or 2 dimensions. For convenience, the nano object is divided into 0-dimensional, 1-dimensional, or 2-dimensional nano-objects depending on whether the object is defined by a point, a line, or a plane. The 0-dimensional nano object may include a quantum dot, a nano sphere, or a nano particle. One-dimensional nano-objects include nano tubes, nano wires, or nanoscale line patterns. Two-dimensional nano-object refers to a nano-object having a meaningful thickness in the nano-scale region.

The method of arranging nano objects is to disperse them within a matrix so that they are randomly distributed, and to arrange the nano objects to have a periodic pattern in a three-dimensional space or to be distributed at a predetermined position. Can be classified. In order to disperse to have an arbitrary distribution, a conventional conventional method, that is, a method of manufacturing a nanoparticle-based composite, or the like can be used. It explains in detail.

In FIG. 4, in the level 2 process, level 1 blocks of nanoscale regions formed to have a constant shape and size are arranged in a three-dimensional space to implement level 2 blocks. In the level 3 process, level 3 blocks are implemented by arranging level 2 blocks having a constant shape and size in a three-dimensional space. If necessary, level 4 blocks, level 5 blocks, and the like can be implemented step by step in the same manner.

The scale region W _lll of the level 2 block is much larger than the scale region W _ll of the level 1 block, and a scale difference of 5 to 100 times is preferable. The same is true between the level 3 block and the level 2 block. Accordingly, as the level increases, the size of each level block gradually increases, so that it is easy to construct a structure of a finally macroscopic scale region.

The hierarchical structure according to the present invention can be manufactured by assembling the blocks of the largest size scale level (level 4 in FIG. 6) first, and then gradually assembling the blocks of the smaller size scale as shown in FIG. It may be. In FIG. 6, level 4 consists of one level 4 block, level 3 consists of four level 3 blocks, level 2 consists of 12 level 2 blocks, and level 1 consists of 48 level 1 blocks. can confirm. Of course, the present invention is not limited to this number.

At level 1 of FIG. 6, as in FIG. 4, various nano-objects as shown in FIG. 5 can be arranged within the matrix of each level 1 block. The detailed process of manufacturing a layered structure as shown in FIG. 6 is demonstrated later.

Hereinafter, a method of manufacturing the layered structure as shown in FIG. 4 will be described. For convenience, the nano-object is described as a metal nano-pattern and the base is a polymer (Polymer), but the present invention is not limited thereto. As an example, not only a polymer but also a metal may be used as the matrix, and FIGS. 11 to 13 illustrate a process of manufacturing a layered structure using different types of dissimilar metals as materials of the matrix and the nano-object.

7 illustrates a level 1 process of the layered structure as shown in FIG. 4.

In FIG. 7, the function of the sacrificial layer of process 1 is to allow the completed level 1 block to be smoothly separated from the base material by later etching. The material of the sacrificial layer is preferably a material larger than the polymer whose etching sensitivity is known.

The type of polymer in Step 2 may be spin coated, and the thickness can be precisely controlled depending on the spin coating conditions.

In step 3, the metal nanopattern can be formed using conventional methods. For example, a method using optical lithography, a method using nanoimprint or soft lithography, a shadow mask method or a metal transfer printing method can be used.

In addition, using a holographic lithography method, it is possible to easily perform a level 1 process without the deposition process of metal nanopatterns, and to arrange nano objects of various shapes in three dimensions and periodically. However, in this case, the minimum structure, that is, the size of the level 1 block should be 100 nm or more, and there is a disadvantage in that the limitation of the material that can be used is very large.

In the case of using a dissimilar metal instead of a polymer as the base of the level 1 block in FIG. 11, the level 1 process of the layered structure as shown in FIG. 4 is shown. The process is generally similar to the process shown in FIG.

8 shows a process for producing a level 1 block after the level 1 process.

In FIG. 8, it is preferable to perform the PR (Photo Resist) coating of Process 2 before Process 3, and the lithography of Process 3 may be conventional optical lithography or imprint lithography.

The polymer matrix may be etched using the PR pattern formed in step 3, and an inorganic pattern may be formed and etched instead of the PR pattern according to the type of the polymer matrix. In the case of using an inorganic pattern as an etch mask instead of the PR pattern, instead of the PR spin coating of Step 2, a metal (such as W or Ti) or an oxide (SiO ₂₎ An inorganic layer deposition process may be required, and a pattern is formed on the inorganic layer by lithography of Step 3.

Additionally, process 3 may include a process such as layer deposition, patterning or etching. This additional process will be easily understood by those of ordinary skill in the art related to semiconductor manufacturing, and thus a detailed description thereof will be omitted.

Finally, a level 1 block is prepared by removing the PR pattern or the inorganic pattern and the sacrificial layer by the steps 5 and 6.

The sacrificial layer material between the level 1 block and the base material may be the same as the PR or inorganic layer of process 2, or may be different from each other. In the case of the same material, since the PR and the sacrificial layer can be removed in one process, the etching process is simpler than in the case of different materials.

In the case of using a dissimilar metal instead of a polymer as a base of the level 1 block in FIG. 12, a process of manufacturing a level 1 block after the level 1 process of the layered structure as shown in FIG. 4 is illustrated. It is generally similar to the process shown in FIG. 8, except that the matrix is a dissimilar metal from the nano-object.

A level 2 process using a level 1 block made in FIG. 9 is shown.

Step 2 of FIG. 9 is a step of collectively removing a level 1 block manufactured on a dummy base material by using a chuck. As the chuck, an electrostatic chuck or a polymer chuck commonly used in semiconductor-related processes may be used.

Since the oxide layer between the level 1 block and the dummy base material is already etched, the adhesion between the level 1 block and the dummy base material is very low. Therefore, the chuck can be used to remove the level 1 block relatively easily.

Step 3 of FIG. 9 is a step of transferring the removed level 1 block onto a target substrate.

At this time, it is preferable to actively control the adhesive force between the chuck and the level 1 block. That is, the adhesion between the chuck and the level 1 block must be increased when the level 1 block is removed from the dummy base material, and the adhesion between the chuck and the level 1 block is reduced when the level 1 block is transferred onto the target base material.

In the case of using the electrostatic chuck, the adhesive force can be controlled by controlling the voltage applied to the chuck, and in the case of the polymer chuck, the adhesive force can be controlled by controlling the deformation rate of the chuck.

If it is difficult to attach the level 1 block onto the target base material only by controlling the adhesive force of the chuck, the adhesion reinforcing layer can be formed on the target base material before step 3. Self-assembled monolayers such as Gycidoxypropyl Trimethory Silane (GPT), Acryloxypropyl Methyl Cichloro Silane (APDMS) or Aminopropyl Triethoxy Silane (APTS), and polymer adhesive layers having nano-scale thicknesses Can be used.

Step 4 of FIG. 9 is a step of spin coating the polymer layer, and step 5 is a step of attaching a level 1 block like step 3. The level 2 process is completed by repeating the process 4 and the process 5 as many times as needed.

The process of manufacturing a level 2 block after the level 2 process is similar to the level 1 block manufacturing process shown in FIG. However, the level 2 block is very large compared to the level 1 block. The level 3 process using the manufactured level 2 block is similar to the level 2 process shown in FIG.

In FIG. 13, when a dissimilar metal is used instead of a polymer as a base of the level 1 block, a level 2 process using a level 1 block prepared as shown in FIG. 12 is illustrated. It is generally similar to the process shown in FIG. 9 except that the matrix is a dissimilar metal.

Hereinafter, a method of manufacturing a layered structure according to another aspect of the present invention illustrated in FIG. 6 will be described.

In the process of manufacturing a layered structure according to an aspect of the present invention described above, while manufacturing a block from a smaller scale to a larger block sequentially, the following manufacturing method is first formed on the target base material from the larger scale block. The difference is that the smaller blocks are sequentially formed on the larger blocks. In addition, while the above-described manufacturing method has to manufacture a block having a smaller scale and gradually larger blocks in order, the following manufacturing method is not limited in the manufacturing order between the basic blocks for each layer.

The manufacturing process of the layered structure shown in FIG. 6 is as shown in FIG.

Similarly to the layered structure shown in FIG. 4, the layered structure shown in FIG. 6 needs to be manufactured in large quantities on the dummy base material. In this case, since the basic blocks for each layer have no dependency on the production process, the basic blocks for each layer may be manufactured separately. In the manufacturing process of the layered structure illustrated in FIG. 4, since the basic blocks for each layer are manufactured using the basic blocks of the previous process, the processes must be sequentially performed to manufacture each basic block for each layer.

The optical or imprint lithography technique described above may be used to manufacture the basic block for each layer, and the shadow mask method and the metal transfer printing method may be applied.

Step 2 of FIG. 10 is a step of separating the largest block (level 3 block in FIG. 10) from the basic blocks manufactured by layers from the dummy base material.

The chuck used in Step 2 is the same as that in FIG. 9.

In order to adhere the block removed from the dummy base material onto the target base material, an adhesion enhancing layer can be deposited as in Step 3. Similarly, adhesion enhancement layers deposited before step 3 of FIG. 9 may be used.

Thereafter, the block attached to the chuck in Step 4 is brought into contact with the target base material on which the adhesion reinforcing layer is deposited to attach on the target base material.

Steps 5 and 6 are processes in which blocks smaller in size are transferred onto the target base material and attached, similarly to steps 2 to 4. If necessary, the process of stacking blocks of the same level may be repeated several times.

As described above and described with reference to a preferred embodiment for illustrating the technical idea of the present invention, the present invention is not limited to the configuration and operation as shown and described as described above, it is a deviation from the scope of the technical idea It will be understood by those skilled in the art that many modifications and variations can be made to the invention without departing from the scope of the invention. Accordingly, all such suitable changes, modifications, and equivalents should be considered to be within the scope of the present invention.

1 is an illustration of the hierarchy found in human tendons.

2 is an illustration of a hierarchical structure formed on the sole of a Gecko lizard.

3 is an illustration of a product that can be prepared according to the present invention.

4 is an overall flow diagram of a manufacturing process of a layered structure in accordance with an aspect of the present invention.

FIG. 5 is an illustration of a nano object arranged in a matrix in a level 1 process. FIG.

6 is a schematic diagram of a layered structure according to another aspect of the present invention.

7 is a detailed flow diagram of a level 1 process in the manufacturing process of a layered structure in accordance with an aspect of the present invention.

8 is a detailed flowchart of a process of manufacturing a level 1 block after a level 1 process in a process of manufacturing a layered structure according to an aspect of the present invention.

9 is a detailed flowchart of a level 2 process using a level 1 block produced during the manufacturing process of a layered structure in accordance with an aspect of the present invention.

10 is an overall flow diagram of a manufacturing process of a layered structure according to another aspect of the present invention.

FIG. 11 is a detailed flowchart of a level 1 process in the manufacturing process of a layered structure in accordance with an aspect of the present invention when the base of the level 1 block is a dissimilar metal; FIG.

12 is a detailed flowchart of a process of manufacturing a level 1 block after a level 1 process during the manufacturing process of a layered structure according to an aspect of the present invention when the base of the level 1 block is a dissimilar metal;

FIG. 13 is a detailed flowchart of a level 2 process of manufacturing a layered structure according to an aspect of the present invention when the matrix of the level 1 block is a dissimilar metal; FIG.

Claims (31)

In the layered structure, A layered structure, characterized in that at least one or more nano-objects having a characteristic length of a nano-scale region are arranged in a predetermined pattern on an internal matrix. The method of claim 1, The matrix is a layered structure, characterized in that the polymer (Polymer) or metal. The method of claim 1, The characteristic length is a layered structure, characterized in that 1 nm to 100 nm. The method of claim 1, The nano object may be formed of a line pattern of a quantum dot, a nano sphere, a nano particle, a nano tube, a nano wire, and a nano scale region. Layered structure, characterized in that any one. The method of claim 1, The pattern is any one of optical lithography, soft lithography, holographic lithography, nano imprint, shadow mask and metal transfer printing methods. Layered structure, characterized in that formed. In the layered structure, At least one or more first blocks are arranged in a second pattern inside a second block in a second pattern, and a nano scale region is formed in the first base in the first block. At least one nano-object having a characteristic length of is a layered structure, characterized in that arranged by a constant first pattern. The method of claim 6, And wherein said first base or said second base is a polymer or a metal. The method of claim 6, The characteristic length is a layered structure, characterized in that 1 nm to 100 nm. The method of claim 6, The nano object may be formed of a line pattern of a quantum dot, a nano sphere, a nano particle, a nano tube, a nano wire, and a nano scale region. Layered structure, characterized in that any one. The method of claim 6, The first pattern may be any one of an optical lithography, soft lithography, holographic lithography, nano imprint, shadow mask, and metal transfer printing method. Layered structure, characterized in that formed by. The method of claim 6, The size of the second block is a layered structure, characterized in that 5 to 100 times larger than the size of the first block. In the layered structure, A layered structure, characterized in that at least one or more fourth blocks having a characteristic length of a nano scale region are combined outside the first structure where at least one or more third blocks are coupled to each other. The method of claim 12, The characteristic length is a layered structure, characterized in that 1 nm to 100 nm. In the manufacturing method of the layered structure, (a) forming a first matrix on the first substrate; (b) arranging at least one or more nano-objects having characteristic lengths of nano-scale regions on the first matrix by a constant first pattern; (c) forming a second base on the first pattern of step (b); And (d) separating the first base material to form a first block. The method of claim 14, The first base or the second base is a method of producing a layered structure, characterized in that the polymer (Polymer) or metal. The method of claim 14, The characteristic length is 1 nm to 100 nm manufacturing method of the layered structure, characterized in that. The method of claim 14, The nano object may be formed of a line pattern of a quantum dot, a nano sphere, a nano particle, a nano tube, a nano wire, and a nano scale region. Method for producing a layered structure, characterized in that any one. The method of claim 14, The pattern is any one of optical lithography, soft lithography, holographic lithography, nano imprint, shadow mask and metal transfer printing methods. Method for producing a layered structure, characterized in that formed. The method of claim 14, In step (a), (a1) forming a sacrificial layer on the first base material before forming the first base. The method of claim 14, In step (d), (d1) forming a PR (Photo Resist) pattern or an inorganic pattern on the second base and then etching; And (d2) removing the PR or the inorganic material; manufacturing method of a layered structure comprising a. The method of claim 20, The PR pattern or the inorganic pattern is formed by using an optical lithography or imprint lithography method. The method of claim 14, After step (d), (e) arranging at least one or more said first blocks on a second base material by a constant second pattern; (f) forming a third base on the second pattern of step (e); And (g) separating the second base material to form a second block. The method of claim 22, In step (e), (e1) attaching the first block onto the second base material using a chuck. The method of claim 22, In step (e), (e2) forming an adhesion reinforcing layer on the second base material before arranging the first block. The method of claim 24, The adhesion reinforcing layer is a method of manufacturing a layered structure, characterized in that the self-assembled monolayer (Self-Assembled Monolayer) or a polymer adhesive layer. The method of claim 22, And the size of the second block is 5 to 100 times larger than the size of the first block. In the manufacturing method of the layered structure, (A) forming at least one third block having a characteristic length of the nanoscale region and at least one fourth block larger than the size of the third block; (B) attaching the fourth block on a third substrate, and attaching the third block on the fourth block; And (C) separating the third base material; manufacturing method of a layered structure comprising a. The method of claim 27, The size of the fourth block is a manufacturing method of the layered structure, characterized in that 5 to 100 times larger than the size of the third block. The method of claim 27, Step (B) is, (B1) attaching the fourth block or the third block onto the third base material or the fourth block using a chuck. The method of claim 27, Step (B) is, (B2) forming an adhesion reinforcing layer on the third base material before attaching the fourth block. The method of claim 30, The adhesion reinforcing layer is a method of manufacturing a layered structure, characterized in that the self-assembled monolayer (Self-Assembled Monolayer) or a polymer adhesive layer.

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