KR20100010790A - Gas supply method of processing chamber for manufacturing semiconductor and apparatus for making semiconductor - Google Patents

Gas supply method of processing chamber for manufacturing semiconductor and apparatus for making semiconductor Download PDF

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Publication number
KR20100010790A
KR20100010790A KR1020080071830A KR20080071830A KR20100010790A KR 20100010790 A KR20100010790 A KR 20100010790A KR 1020080071830 A KR1020080071830 A KR 1020080071830A KR 20080071830 A KR20080071830 A KR 20080071830A KR 20100010790 A KR20100010790 A KR 20100010790A
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KR
South Korea
Prior art keywords
gas
process chamber
supply
line
supply amount
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KR1020080071830A
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Korean (ko)
Inventor
김종호
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주식회사 아토
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Priority to KR1020080071830A priority Critical patent/KR20100010790A/en
Publication of KR20100010790A publication Critical patent/KR20100010790A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a method for supplying a gas to a semiconductor process chamber for maintaining a constant pressure in the process chamber, and a semiconductor manufacturing apparatus for implementing the same.

The gas supply method of the semiconductor process chamber according to the present invention is a manufacturing process of the semiconductor device is made, the first gas is supplied into the process chamber connected to the pump and the vacuum atmosphere is formed and the supply amount of the first gas is kept constant The first gas stabilization step, the second gas stabilization step to supply the second gas reacting with the first gas to the outside of the process chamber and to maintain a constant supply of the second gas, the inert gas is supplied into the process chamber and inert The supply amount of the gas is kept constant, but the supply amount of the inert gas is maintained at the same amount as the supply amount of the second gas supplied in the second gas stabilization step and the supply of the second gas supplied to the outside of the process chamber By changing the path and entering the inside of the process chamber and stopping the supply of inert gas, the entire supply to the inside of the process chamber And a gas reforming step to be able to maintain a certain amount.

Description

Gas supply method of processing chamber for manufacturing semiconductor and Apparatus for making semiconductor}

The present invention relates to a semiconductor manufacturing apparatus used to manufacture a semiconductor device and a method for supplying gas into a process chamber of a semiconductor manufacturing apparatus, and more particularly, even if a plurality of reaction gases are sequentially introduced into the process chamber within the process chamber. The present invention relates to a semiconductor manufacturing apparatus and a method of supplying a gas to a semiconductor process chamber having an improved structure so that pressure can be constantly adjusted.

In general, the manufacturing process of a semiconductor device is a process of realizing an electronic circuit that performs a certain function by combining thin films, such as conductive films, semiconductor films, and insulating films, having different properties on a substrate, by combining the order of stacking and the shape of a pattern. I can speak.

In the process of depositing a thin film on a substrate during the manufacturing process of the semiconductor device, two or more reaction gases are injected into a process chamber and reacted with each other. Hereinafter, two different reactions in a conventional semiconductor manufacturing apparatus will be described with reference to FIG. 1. A process of depositing a thin film by introducing a gas into the process chamber will be described.

1 is a schematic configuration diagram illustrating a gas supply method of a conventional semiconductor process chamber. Referring to FIG. 1, the conventional semiconductor manufacturing apparatus 9 includes a process chamber 1 in which a deposition process is performed. The first gas line 2 and the second gas line 3 are provided to supply different kinds of reaction gases to the process chamber 1.

In addition, an exhaust line 4 is connected to the lower portion of the process chamber 1 to form the inside of the process chamber 1 in a vacuum atmosphere, and the exhaust line 4 is connected to the pump 5. Accordingly, the gases not involved in the deposition reaction among the gases introduced into the first gas line 2 and the second gas line 3 are forcedly exhausted through the exhaust line 4. Meanwhile, a bypass line 6 connecting the second gas line 3 and the exhaust line 4 is provided so that the second gas can be discharged to the pump 5 without passing through the process chamber.

When the two reaction gases are introduced into the semiconductor manufacturing apparatus 9, the first gas is first introduced into the process chamber 1. Since the gas flowing into the process chamber 1 during the process is preferably maintained in a steady state in which the flow rate does not change with time, the process chamber 1 for a predetermined time before the deposition process proceeds Flows through and induces a constant supply.

Similarly to the first gas, the second gas needs to be induced to be in a steady state. However, when the second gas flows through the process chamber 1 like the first gas, the reaction occurs in the process chamber 2, so that the second gas flows through the bypass line 6 so that the supply amount is constant.

When the supply amount of the first gas and the second gas is kept constant, the bypass line 6 is closed and the second gas is introduced into the process chamber 1 through the second gas line 3. The first gas and the second gas introduced in this way deposit a thin film on the substrate through the reaction.

However, when gas is supplied in the above manner, the pressure in the process chamber 1 suddenly increases, causing a problem in the quality of the deposited thin film. That is, in order for the thin film deposition to proceed smoothly, the pressure inside the process chamber 1 should be maintained at an unprecedented pressure below atmospheric pressure. In the chamber in which the first gas was kept constant while being supplied to the process chamber 2, Since the pressure suddenly increased due to the introduction of the second gas, it was necessary to set the pressure in the process chamber 1 by adjusting the valve 7 at the beginning of the deposition process. As a result, a predetermined time is required while the pressure inside the process chamber 1 is readjusted to an appropriate condition, and there is a problem in that the quality of the thin film is not guaranteed to the desired level because the pressure continuously changes during this time.

An object of the present invention is to provide a gas supply method of a process chamber to maintain a constant pressure inside the process chamber from the start point to the completion point of the thin film deposition process.

In addition, another object of the present invention to provide a semiconductor manufacturing apparatus having an improved structure to implement the above gas supply method for maintaining a constant pressure in the process chamber.

In the gas supply method according to the present invention for achieving the above object, the manufacturing process of the semiconductor device is made, the first gas is supplied into the process chamber connected to the pump and the vacuum atmosphere is formed and the supply amount of the first gas is constant The first gas stabilization step to be maintained to be maintained, the second gas stabilization step to supply the second gas reacting with the first gas to the outside of the process chamber and to maintain a constant supply amount of the second gas, inert gas An inert gas stabilizing step of supplying the inert gas to the process chamber and maintaining a constant supply amount of the inert gas, the supply amount of the inert gas being the same as the supply amount of the second gas supplied in the second gas stabilization step; Change the supply path of the second gas supplied to the outside of the process chamber to flow into the process chamber; By stopping the supply of the inert gas, it is characterized in that it comprises a gas conversion step to ensure that the total amount of gas supplied into the process chamber is kept constant.

According to the present invention, after the supply amount of the first gas and the inert gas supplied into the process chamber is stabilized, the pressure stabilizing step of adjusting the pressure inside the process chamber to be the pressure required for the manufacturing process of the semiconductor device further. It is preferable to provide.

In addition, the present invention, the manufacturing process of the semiconductor device is made, the first gas stabilization step of supplying the first gas into the process chamber is connected to the pump and the vacuum atmosphere is formed and the supply amount of the first gas is kept constant And a second gas stabilizing step of supplying a second gas reacting with the first gas to the outside of the process chamber and maintaining a constant supply amount of the second gas, and the second gas supplied to the outside of the process chamber. By reducing the supply path of the inflow into the process chamber, and by reducing the supply amount of the second gas from the supply amount of the first gas, by reducing the amount of gas to maintain the total amount of gas inside the process chamber It is characterized by having a conversion step.

In addition, the semiconductor manufacturing apparatus according to the present invention for achieving the above another object, the process chamber is formed in a predetermined space therein so that the manufacturing process of the semiconductor device, the first gas flow into the space portion of the process chamber A first gas line, a second gas line for introducing a second gas into the space portion of the process chamber, an exhaust pump for forming the space portion of the process chamber into a vacuum, and an exhaust line interconnecting the process chamber and the exhaust pump A bypass line connecting the second gas to the exhaust line, and the bypass line opens and closes so that an inert gas flows into the space portion of the process chamber when the second gas flows into the bypass line. It is characterized in that it has an inert gas line which is linked and opened together.

In the gas supply method and semiconductor manufacturing apparatus of the semiconductor process chamber according to the present invention, the pressure of the process chamber can be kept constant from the beginning to the end of the thin film deposition process, so that the quality of the thin film such as the uniformity of the thin film can be kept constant. There is an advantage that it can.

Hereinafter, a gas supply method of a semiconductor manufacturing apparatus and a semiconductor process chamber according to a preferred embodiment of the present invention will be described in more detail with reference to the accompanying drawings.

3 is a schematic structural diagram of a semiconductor manufacturing apparatus according to a preferred embodiment of the present invention.

Referring to FIG. 3, a semiconductor manufacturing apparatus 100 according to a preferred embodiment of the present invention includes a process chamber 10. In the process chamber 10, a thin film deposition process using two or more reaction gases is performed. Although not shown, a shower head is provided at an upper portion of the process chamber 10, and a space portion (not shown) in which a deposition process is performed is provided at a lower portion of the shower head. A gas diffusion space in which the gas is diffused is provided in the shower head, and a plurality of gas injection holes are formed in the lower surface of the shower head, so that the gases diffused in the gas diffusion space are formed inside the process chamber 10 (not shown). ) Can be introduced into. In addition, the susceptor for supporting the substrate is provided in the space so as to be able to lift and lower, and the substrate introduced through the slit valve (not shown) provided in the process chamber 10 has a structure that is seated on the susceptor.

The first gas line 20 is connected to the upper portion of the process chamber 10 to introduce the first gas into the inner space of the process chamber 10. More precisely, it flows into the space via the shower head of the process chamber. The first gas line 20 is provided with a flow regulator 22 and a first valve 21 for opening and closing the first line 20 to adjust the supply amount of the first gas.

In addition, a second gas line 30 and an inert gas line 40 for connecting the second gas and the inert gas to the inner space of the process chamber 10 are respectively connected to the upper portion of the process chamber 10. Similarly, the second gas line 30 and the inert gas line 40 also have flow regulators 32 and 42 for adjusting the supply amounts of the second gas and the inert gas, and the second line 30 and the inert gas line 40. ) Are provided with second and third valves 31 and 41 capable of opening and closing. That is, the first gas, the second gas, and the inert gas are configured to flow into the process chamber 10 through independent gas lines, respectively.

An exhaust pump 50 for forcibly evacuating the gas introduced into the process chamber 10 is provided, and the exhaust pump 50 is interconnected with the process chamber 10 through the exhaust line 60. In the exhaust line 60, two valves 61 and 62 are sequentially installed. The first exhaust valve 61 provided on the upstream and downstream side of the exhaust path of the gas is always kept open, and the exhaust amount is adjusted by adjusting the second exhaust valve 62 provided on the upstream side. That is, the pressure in the process chamber 10 is adjusted by adjusting the second exhaust valve 62.

In addition, a bypass line 70 is installed in the semiconductor manufacturing apparatus 100 according to the present invention so that the second gas may be directly discharged through the exhaust pump 50 without being introduced into the process chamber 10. The bypass line 70 interconnects the second gas line 30 and the exhaust line 60. That is, branched at the front end of the second gas line 20 is installed in the second valve 21 is connected to the rear end of the first exhaust valve 61 is installed in the exhaust line 60, exhaust pump 50 ). Of course, the bypass line 70 is also provided with a fourth valve 71 for opening and closing the bypass line 70.

In the semiconductor manufacturing apparatus 100 according to the present invention, a characteristic configuration in which the bypass line 70 and the inert gas line 40 interlock with each other is opened and closed. That is, when the bypass line 70 is opened and the second gas flows through the bypass line 70, the inert gas line 40 is also opened to supply the inert gas to the process chamber 10, but the bypass line is provided. When 70 is closed and the second gas is supplied to the process chamber 10 through the second gas line 30, the inert gas line 40 is also closed so that the inert gas is not supplied to the process chamber 10. The interlocking structure includes a second valve 31 installed in the second gas line 20, a third valve 41 installed in the inert gas line 40, and a fourth valve 71 installed in the bypass line 70. Can be controlled together. That is, the third valve 41 of the inert gas line 70 and the fourth valve 71 of the bypass line 40 are closed when the second valve 31 of the second gas line 20 is opened. When the second valve 31 of the second gas line 20 is closed, the second valve 31 is operated to open. The reason why the opening and closing of the gas lines is interlocked will be described together with the gas supply method according to the present invention.

Hereinafter, a gas supply method M100 according to a preferred embodiment of the present invention will be described with reference to FIG. 2. 2 is a schematic flowchart illustrating a gas supply method of a semiconductor process chamber according to a preferred embodiment of the present invention.

2, the gas supply method (M100) according to a preferred embodiment of the present invention, the first gas stabilization step (M10), the second gas stabilization step (M20), the inert gas stabilization step (M30) and the gas conversion step (M50) is provided.

The first gas stabilization step M10 is performed before starting to deposit the thin film on the substrate, and is a process of making the supply amount of the first gas constant. That is, during the thin film deposition process, the first gas should be supplied to the process chamber 10 in a constant amount without changing its amount with time. However, in the initial stage of supplying the first gas to the process chamber 10, even if the flow regulator 22 is installed, the flow rate is not maintained stably in most cases, and the flow rate starts after a predetermined time elapses from the start of gas supply. It is common to remain stable. Thus, in the first gas stabilization step (M10) while the exhaust pump 50 is operated while opening the first valve 21 to flow the first gas through the process chamber 10, the process chamber 10 by passing a certain time Stabilize the flow rate of the first gas flowing into the).

The second gas stabilization step (M20) is also performed before starting the thin film deposition on the substrate and is a process of inducing the supply amount of the second gas to be constant. Here, the second gas is a gas that reacts with the first gas to deposit a thin film on the substrate. The purpose of implementing the second gas stabilization step M20 is the same as that of the first gas stabilization step M10. That is, the second gas is introduced into the process chamber 10 at the start of the deposition process, so that the supply amount of the second gas is kept constant from the initial stage to the end of the deposition process.

However, a predetermined time is required until the supply amount of the second gas is constant. During this time, when the second gas flows through the process chamber 10, the first gas and the second gas meet in the process chamber 10. Since the reaction occurs, the second gas flows without passing through the process chamber 10. That is, in the semiconductor manufacturing apparatus 100 shown in FIG. 2, the second gas line 30 is closed and the bypass line 70 is opened so that the second gas passes through the bypass line 70. Inflow directly into the In FIG. 2, the bypass line 70 is connected to the exhaust pump 50 for exhausting the process chamber 10, but a separate pump (not shown) may be connected to the bypass line 70.

In the inert gas stabilization step M30, an inert gas that does not react with another gas such as argon or nitrogen is supplied to the process chamber 10 through the inert gas line 40. Inert gas stabilization step (M30) as in the first gas stabilization step (M10) while supplying an inert gas to the process chamber 10 so that the supply amount can be kept constant.

The reason for supplying the inert gas to the process chamber 10 may be regarded as a preliminary process to maintain the pressure of the process chamber 10 constant throughout the entire process of the thin film deposition process. That is, in order to start the thin film deposition process, the second gas should be introduced into the process chamber 10 in the gas conversion step M50 to be described later. As described in the related art, only the first gas flows in the process chamber 10. In the present situation, when the second gas is introduced, the internal pressure of the process chamber 10 is suddenly increased, so that the quality of the thin film formed at the beginning of the thin film deposition process is poor. Accordingly, by injecting the same amount of inert gas as the amount of the second gas to be introduced at the start of the thin film deposition process to the process chamber 10, the pressure in the process chamber 10 is before and after the start of the thin film deposition process. To remain the same. As a result, the supply amount of the inert gas supplied in the inert gas stabilization step M30 is the same as the supply amount of the second gas supplied in the second gas stabilization step M30.

In the above, the gas stabilization step which makes the supply amount of a 1st gas, a 2nd gas, and an inert gas constant, respectively was demonstrated. In the drawing, although each step is shown to be performed sequentially, the stabilization of each gas may be progressed together or may be sequentially performed as necessary.

Since the above processes are performed before the thin film deposition process is started, it is important that there is no order and that the supply of each gas is kept constant. When the stabilization step is performed, the first gas and the inert gas flow in the process chamber 10 in a constant amount, and the second gas flows in the constant amount in the bypass line.

In this state, the pressure in the process chamber 10 is adjusted by adjusting the opening amount of the second exhaust valve 62. That is, the second exhaust valve 62 is adjusted to make the pressure inside the process chamber 10 the same pressure condition as when the thin film deposition process is performed. However, when the opening amount of the second exhaust valve 62 is adjusted, the pressure in the process chamber 10 is not stabilized initially, and is maintained constant under a desired condition after a certain time has elapsed. As described above, the pressure stabilization step M40 is terminated by keeping the pressure inside the process chamber 10 constant.

In the above, the process of maintaining the supply amount of the first gas and the second gas constant and the process of matching the pressure inside the process chamber 10 with the pressure conditions during the process were performed. All prerequisites for the process are in place.

Now perform a gas conversion step (M50) to start the thin film deposition process. That is, while opening the second gas line 20, the inert gas line 40 and the bypass line 70 are closed. Accordingly, the second gas flowing through the bypass line 70 changes the path and flows through the second gas line 30 to the process chamber 10. In addition, the supply of the inert gas is stopped when the second gas flows into the process chamber 10. The inert gas introduced into the process chamber 10 is replaced with the second gas. However, since only the type of gas is replaced, the amount of gas introduced into the process chamber 10 is the same, so that the pressure inside the process chamber 10 maintains the pressure adjusted in the pressure stabilization step M40.

The second gas may be introduced while maintaining the pressure inside the process chamber 10 through the gas conversion step M40, and the first gas and the second gas are mixed and reacted with each other in the process chamber 10. By depositing a thin film on the substrate. Accordingly, the problem of deterioration of the quality of the thin film due to the pressure change in the initial stage of the deposition process, which has appeared in the conventional method, can be solved.

Until now, the pressure in the process chamber 10 was kept constant by supplying the supply amount of the second gas to the inert gas before introducing the second gas into the process chamber 10, but the inert gas may not be used. An embodiment of this type is shown in FIG. 5. Referring to FIG. 5, in the first gas stabilization step M10, the above-described process is performed as it is, and there is a difference in that only the amount of the first gas flows much more than the amount supplied during the deposition process. . In more detail, in addition to the amount of the first gas to be supplied in the deposition process, the amount of the second gas to be supplied in the increase process is further supplied. That is, when the amount of the first gas is required to be 10 and the amount of the second gas is required to be 5 during the deposition process, the supply amount of the first gas is supplied to 15 in the first gas stabilization step.

In the second gas stabilization step and the pressure stabilization step, the same process as in the above-described embodiment is performed, and a separate description thereof will be omitted.

In the gas reduction switching step M60, the first valve 21 of the first gas line 20 is adjusted to reduce the supply amount of the first gas. That is, the supply amount supplied from the first gas stabilization step M10 is reduced by the amount of the second gas supplied from the second gas stabilization step M20, and is supplied except for 5 in the supply amount of 15 in the previous example. Supply 100,000. As in the previous embodiment, the bypass line 70 is closed and the second gas line 30 is opened to allow the second gas to flow into the process chamber 10.

Through the above process, the same effect as the previous embodiment, that is, the effect of performing the entire process of the thin film deposition process while maintaining the pressure in the process chamber as it can be obtained.

Meanwhile, in the semiconductor manufacturing apparatus 100 described above, the inert gas line 40 is described and illustrated as being directly connected to the process chamber 10. However, the present invention is not limited thereto, and the inert gas line 40 is the first gas line. It may be connected to the 20, or may be connected to the second gas line 30, as shown in FIG. In this case, the inert gas may be mixed with the first gas or the second gas and flow into the process chamber 10. Since the inert gas does not react with other gases, as described above, the inert gas may be mixed with the first gas or the second gas, and the inert gas may be obtained as it is.

Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Accordingly, the true scope of protection of the invention should be defined only by the appended claims.

1 is a schematic configuration diagram illustrating a gas supply method of a conventional semiconductor process chamber.

2 is a schematic flowchart illustrating a gas supply method of a semiconductor process chamber according to a preferred embodiment of the present invention.

3 is a schematic structural diagram of a semiconductor manufacturing apparatus according to a preferred embodiment of the present invention.

Figure 4 is a schematic configuration diagram of a semi-molded body manufacturing apparatus according to another embodiment of the present invention.

5 is a schematic flowchart illustrating a gas supply method of a semiconductor process chamber according to another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100 ... Semiconductor Manufacturing Equipment 10 ... Process Chamber

20 ... first gas line 30 ... second gas line

40 ... inert gas line 50 ... exhaust pump

60 ... exhaust line 70 ... bypass line

M100 ... Gas supply method for semiconductor process chamber M10 ... First gas stabilization step

M20 ... second gas stabilization step M30 ... inert gas stabilization step

M40 ... pressure stabilization stage M50 ... gas shift stage

Claims (8)

A first gas stabilization step of manufacturing a semiconductor device, the first gas being connected to a pump to supply a first gas into a process chamber in which a vacuum atmosphere is formed and to maintain a constant supply amount of the first gas; A second gas stabilizing step of supplying a second gas reacting with the first gas to the outside of the process chamber and maintaining a constant supply amount of the second gas; An inert gas is supplied into the process chamber and the supply amount of the inert gas is kept constant, but the inert gas supply amount is kept the same as the supply amount of the second gas supplied in the second gas stabilization step. Stabilization step; And By changing the supply path of the second gas supplied to the outside of the process chamber to flow into the process chamber and stop the supply of the inert gas, the total amount of gas supplied into the process chamber can be kept constant. Gas conversion step of enabling a; gas supply method of a semiconductor process chamber comprising a. The method of claim 1, After the supply amount of the first gas and the inert gas supplied into the process chamber is stabilized, further comprising a pressure stabilizing step of adjusting the pressure in the process chamber to be the pressure required for the manufacturing process of the semiconductor device The gas supply method of the semiconductor process chamber. The method of claim 1, And supplying the first gas, the second gas, and the inert gas to the process chamber through independent gas lines, respectively. The method of claim 1, And supplying the inert gas into the process chamber through a first gas line for supplying the first gas. The method of claim 1, And supplying the inert gas into the process chamber through a second gas line for supplying the second gas. The method of claim 1, The gas supply method of the semiconductor process chamber, characterized in that in the second gas stabilization step, the gas line to which the second gas is supplied is connected to a separate pump not connected to the process chamber. A first gas stabilizing step of manufacturing a semiconductor device, the first gas being connected to a pump to supply a first gas into a process chamber in which a vacuum atmosphere is formed and to maintain a constant supply amount of the first gas; A second gas stabilizing step of supplying a second gas reacting with the first gas to the outside of the process chamber and maintaining a constant supply amount of the second gas; And By changing the supply path of the second gas supplied to the outside of the process chamber to flow into the process chamber, by reducing the supply amount of the second gas from the supply amount of the first gas, by supplying the second gas And a gas loss conversion step of allowing the total amount of gas to be kept constant. A process chamber in which a predetermined space is formed so that a manufacturing process of the semiconductor device can be made; A first gas line for introducing a first gas into the space part of the process chamber; A second gas line for introducing a second gas into the space of the process chamber; An exhaust pump for forming a vacuum of the space of the process chamber; An exhaust line connecting the process chamber and the exhaust pump to each other; A bypass line connecting the second gas to the exhaust line; And And an inert gas line in which the bypass line is opened and closed together with the opening and closing so that the inert gas flows into the space portion of the process chamber when the second gas is introduced into the bypass line. A semiconductor manufacturing apparatus.
KR1020080071830A 2008-07-23 2008-07-23 Gas supply method of processing chamber for manufacturing semiconductor and apparatus for making semiconductor KR20100010790A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023146194A1 (en) * 2022-01-27 2023-08-03 주성엔지니어링(주) Substrate processing device, and method for manufacturing metal oxide semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023146194A1 (en) * 2022-01-27 2023-08-03 주성엔지니어링(주) Substrate processing device, and method for manufacturing metal oxide semiconductor

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