KR20100003331A - Light emitting device and method of manufacturing the same - Google Patents
Light emitting device and method of manufacturing the same Download PDFInfo
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- KR20100003331A KR20100003331A KR1020080060714A KR20080060714A KR20100003331A KR 20100003331 A KR20100003331 A KR 20100003331A KR 1020080060714 A KR1020080060714 A KR 1020080060714A KR 20080060714 A KR20080060714 A KR 20080060714A KR 20100003331 A KR20100003331 A KR 20100003331A
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Abstract
The present invention relates to a light emitting device and a method of manufacturing the same.
In the light emitting device according to the present invention, a blocking layer between the active layer and the P-type semiconductor layer is formed by stacking a first blocking layer and a second blocking layer, and the second blocking layer gradually decreases the concentration of one element, for example, Al. To form.
Therefore, the lattice of the blocking layer is gradually reduced to form a high quality P-type semiconductor layer, and since the energy barrier can be lowered adjacent to the P-type semiconductor layer, holes can be easily injected from the P-type semiconductor layer into the active layer. Make sure
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a light emitting device capable of improving luminous efficiency by forming a blocking layer by laminating a first blocking layer and a second blocking.
In general, nitrides such as GaN, AlN, InN, and the like have excellent thermal stability and have a direct transition type energy band structure, which has recently attracted much attention as a material for photoelectric devices in the blue and ultraviolet regions. In particular, GaN can be used in high temperature high power devices because the energy bandgap is very large at 3.4 eV at room temperature. In addition, GaN can control energy bandgap from 1.9eV (InN) to 3.4eV (GaN), 6.2eV (AlN) in combination with materials such as InN and AlN, and thus has a wide wavelength range from visible light to ultraviolet light. Because of this, the application of the optical device is a very large material.
A light emitting device using a gallium nitride-based semiconductor generally has an N-type GaN layer, an active layer, and a P-type GaN layer formed on a substrate, and an N-type electrode and a P-type electrode connected to the N-type GaN layer and the P-type GaN layer, respectively. It consists of. When a predetermined current is applied to the N-type electrode and the P-type electrode of the light emitting device, electrons provided from the N-type GaN layer and holes provided from the P-type GaN layer are recombined in the active layer to generate short wavelength light corresponding to green or blue. Will be released. Here, a P-type blocking layer is formed between the active layer and the P-type GaN layer, which is formed of a nitride semiconductor layer containing Al such as P-type AlGaN having a larger energy band gap than the P-type GaN layer. Since gallium nitride-based semiconductors have higher mobility and concentration than electrons, electrons may overflow. At this time, since the P-type AlGaN layer has a larger energy band gap than the P-type GaN layer, electrons provided from the N-type GaN layer can be effectively prevented from overflowing without recombination in the active layer.
However, when the blocking layer is formed of the P-type AlGaN layer, it is difficult to form a high-quality P-type GaN layer because the lattice constant is different from that of the P-type GaN layer formed thereon. In addition, since the blocking layer serves as an energy barrier layer when holes are injected into the active layer, the hole injection effect is reduced. Therefore, the holes recombined in the active layer is reduced, thereby lowering the luminous efficiency of the light emitting device.
The present invention provides a light emitting device capable of forming a high quality P-type GaN layer and improving light emission efficiency and a method of manufacturing the same.
According to the present invention, a blocking layer is formed by stacking a first blocking layer and a second blocking layer, and the second blocking layer is formed such that the concentration of one element is gradually reduced, thereby forming a high quality P-type GaN layer, and emitting efficiency It provides a light emitting device and a method of manufacturing the same that can be improved.
The light emitting device according to the present invention comprises an N-type semiconductor layer formed on the substrate; An active layer formed on the N-type semiconductor layer; A blocking layer formed on the active layer and having a first blocking layer and a second blocking layer laminated; And a P-type semiconductor layer formed on the blocking layer, wherein the second blocking layer is formed by gradually decreasing the concentration of one element.
The first blocking layer and the second blocking layer are formed of layers having different components.
The first blocking layer and the second blocking layer are formed of an AlGaN layer and an AlInGaN layer or an AlInGaN layer and an AlGaN layer, and the second blocking layer is formed by gradually decreasing Al concentration.
A first undoped semiconductor layer formed between the substrate and the N-type semiconductor layer; And a second undoped semiconductor layer formed between the blocking layer and the P-type semiconductor layer.
According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device, including forming an active layer after forming an N-type semiconductor layer on a substrate; Stacking a first blocking layer and a second blocking layer on the active layer to form a blocking layer; And forming a P-type semiconductor layer on the blocking layer, wherein the second blocking layer is formed such that the concentration of one element gradually decreases.
The first blocking layer and the second blocking layer are formed by stacking an AlGaN layer and an AlInGaN layer or an AlInGaN layer and an AlGaN layer, and the second blocking layer is formed by gradually decreasing the Al concentration.
According to the present invention, a blocking layer is formed by stacking a first blocking layer and a second blocking layer between an active layer and a P-type semiconductor layer, and the second blocking layer is formed such that the concentration of one element, for example, Al is gradually reduced. Form. In addition, the first blocking layer and the second blocking layer are formed by stacking layers having different components. The first blocking layer is formed of an AlGaN layer and the second blocking layer is formed of an AlInGaN layer, or the first blocking layer is formed of AlInGaN. The second blocking layer may be formed of an AlGaN layer.
As described above, when the blocking layer is formed, the lattice is gradually reduced to form a high-quality P-type semiconductor layer, and the energy barrier can be lowered adjacent to the P-type semiconductor layer, so that holes are easily formed from the P-type semiconductor layer. It can be injected into the active layer. Therefore, the luminous efficiency of a light emitting element can be improved.
Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention; However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art. It is provided for complete information. In the drawings, the thickness of layers, films, panels, regions, etc., may be exaggerated for clarity, and like reference numerals designate like elements. In addition, if a part such as a layer, film, area, etc. is expressed as “upper” or “on” another part, each part is different from each part as well as being “right up” or “directly above” another part. This includes the case where there is another part between parts.
1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention. 2 and 3 are schematic diagrams showing an energy barrier of a blocking layer and its adjacent layer according to the present invention and the prior art.
Referring to FIG. 1, a light emitting device according to an exemplary embodiment may include a
The
The
The N-
The
The blocking
The P-
The
Meanwhile, the above-described material layers may include metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and molecular beam growth method. (Molecular Beam Epitaxy; MBE), hydride vapor phase growth (Hydride Vapor Phase Epitaxy; HVPE) and the like formed using a variety of deposition or growth methods.
In addition, the above embodiment has described a horizontal structure in which the
Hereinafter, a method of manufacturing a light emitting device according to an exemplary embodiment of the present invention configured as described above will be described with reference to FIG. 4.
S10: A
S20: An N-
S30: The
S40: The blocking
S50: After the
Subsequently, predetermined regions of the P-
In addition, triethylgallium (TEGa) may be used as the source of gallium in addition to trimethylgallium (TMGa), and triethylaluminum (TEAl) and trimethyl in addition to trimethyaluminum (TMAl) as the aluminum source. Trimethylaminealuminum (TMAAl) or dimethylethylaminealuminum (DMEAAl) may be used. In addition, as the nitrogen source, monomethylhydrazine (MMHy) and dimethylhydrazine (DMHy) may be used in addition to ammonia (NH 3 ), and triethylindium (TEIn) may be used as the indium source.
5 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
Referring to FIG. 5, a light emitting device according to another exemplary embodiment of the present invention may include a
The first
The second
The
Meanwhile, a transparent electrode (not shown) may be formed on the
Although the technical spirit of the present invention has been described in detail according to the above embodiment, it should be noted that the above embodiment is for the purpose of description and not for the purpose of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
2 is a schematic view showing an energy barrier of a light emitting device according to an embodiment of the present invention.
3 is a schematic view showing an energy barrier of a conventional light emitting device.
4 is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
5 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
<Explanation of symbols for the main parts of the drawings>
10
30: N-type semiconductor layer 40: active layer
50: blocking layer 51: first blocking layer
52: second blocking layer 60: p-type semiconductor layer
70: first electrode 80: second electrode
Claims (7)
Priority Applications (1)
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KR1020080060714A KR20100003331A (en) | 2008-06-26 | 2008-06-26 | Light emitting device and method of manufacturing the same |
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KR1020080060714A KR20100003331A (en) | 2008-06-26 | 2008-06-26 | Light emitting device and method of manufacturing the same |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130015112A (en) | 2011-08-02 | 2013-02-13 | 서울옵토디바이스주식회사 | Light emitting diode and method of fabricating the same |
KR20140096846A (en) * | 2013-01-29 | 2014-08-06 | 엘지이노텍 주식회사 | Light emitting device |
WO2017049053A1 (en) * | 2015-09-17 | 2017-03-23 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
-
2008
- 2008-06-26 KR KR1020080060714A patent/KR20100003331A/en not_active Application Discontinuation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130015112A (en) | 2011-08-02 | 2013-02-13 | 서울옵토디바이스주식회사 | Light emitting diode and method of fabricating the same |
KR20140096846A (en) * | 2013-01-29 | 2014-08-06 | 엘지이노텍 주식회사 | Light emitting device |
WO2017049053A1 (en) * | 2015-09-17 | 2017-03-23 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
US9680057B2 (en) | 2015-09-17 | 2017-06-13 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
US9806227B2 (en) | 2015-09-17 | 2017-10-31 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets |
US10211368B2 (en) | 2015-09-17 | 2019-02-19 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets |
US10211369B2 (en) | 2015-09-17 | 2019-02-19 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
US10700237B2 (en) | 2015-09-17 | 2020-06-30 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets |
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