KR20100001552A - Etching apparatus using plasma and method of etching using plasma - Google Patents

Abstract

PURPOSE: An etching apparatus using plasma and a method of etching using the plasma are provided to accelerate a minus charged particle which is projected to a substrate by controlling and synchronizing radio frequencies of an etch apparatus. CONSTITUTION: In a etching apparatus using plasma and a method of etching using the plasma, a process chamber(110) etches a thin film on a substrate on a lower electrode by using plasma which is generated by a bias power and a source power. A bias power unit](112) transfers a radio frequency of the bias power to a pulse type mode. A source power unit(114) transfers the radio frequency of the source power to the pulse-type mode. A synchronizing unit(120) synchronizes a supply time of the pulse-type radio frequencies of the bias power and the source power.

Description

Etching apparatus using plasma and method of etching using plasma

The present invention relates to an etching apparatus and a plasma etching method using a plasma. More specifically, the present invention relates to an etching apparatus using a plasma capable of etching a thin film formed on a substrate to form an excellent pattern and an etching method using the same.

BACKGROUND ART In recent years, with the rapid spread of information media such as computers, semiconductor devices are also rapidly developing, and such semiconductor devices have been developed with fine pattern processing technology in the direction of improving integration, reliability, and response speed. As an example of the recent fine pattern processing technique, the plasma etching technique which forms a pattern by etching the thin film formed on the board | substrate using plasma is mentioned. As such a plasma etching technique, there is a technique of etching a non-volatile metal layer using a high density plasma (HDP).

Etching apparatuses used in a technique for etching a nonvolatile metal film using a conventional high density plasma generally include a process chamber including a lower electrode and an upper electrode. After generating a high density plasma from a source material such as a gas by a bias power delivered to the lower electrode and a source power delivered to the upper electrode, the ratio formed on the substrate using the generated high density plasma is generated. The volatile metal film is etched.

The apparatus for etching the nonvolatile metal film using the high density plasma described above is mainly manufactured by TEGAL, APPLIED MATERIALS, SIGMA MELTEC, etc. The characteristics of are slightly different. For example, the Applied Materials etchant has a radio frequency (RF) of about 0.03 to 3 MHz for bias power and a radio frequency of about 30 to 400 MHz for source power. On the other hand, in Tegalsa and Sigma Meltec's etching devices, the bias power and the source power are delivered to the lower electrode. At this time, the radio frequency of the source power is common to about 13.56MHz, but the radio frequency of the bias power is different from each other at about 450kHz and about 100MHz, respectively.

As described above, the conventional plasma etching apparatus has somewhat different characteristics, but the concept of forming a plasma in the etching apparatus, positively charged particles are generated in the plasma, and etching the thin film using the same is the same. Do. That is, in the conventional etching apparatus, the thin film is mostly etched by using positively charged particles in the plasma.

However, when the non-volatile metal film is etched using positively charged particles, the etching rate is lowered because it is difficult to properly remove the nonvolatile reaction product, and it is difficult for the sidewalls of the pattern to have a desired vertical profile. Rather, a problem arises in which the reaction product is redeposited onto the pattern or substrate. In addition, in the conventional plasma etching apparatus, a condition for allowing the negatively charged particles, which may increase the etch rate with respect to the nonvolatile metal film, to be allowed to enter the thin film positioned on the substrate to the maximum, is not considered. Therefore, there is a need for a new etching apparatus using a plasma capable of forming a desired pattern from a nonvolatile metal film.

One object of the present invention for solving the above problems is to provide an etching apparatus using a plasma capable of etching the thin film formed on the substrate at a high etching rate by generating negatively charged particles in the plasma. .

Another object of the present invention is to provide a plasma etching method for etching a thin film formed on a substrate at a high etching rate by using negatively charged particles in a plasma.

The etching apparatus using a plasma according to an embodiment of the present invention for achieving the above object has a lower electrode and an upper electrode, by the bias power delivered to the lower electrode and the source power delivered to the upper electrode A process chamber in which an etching process of etching a thin film formed on a substrate positioned on the lower electrode using the generated plasma is performed, and a radio frequency of the bias power is pulsed within a range of 50 kHz to 500 kHz. A bias power unit for applying a mode, a source power unit for applying a radio frequency of the source power in a pulsed mode within a range of 27 MHz to 500 MHz, a pulsed radio frequency of the bias power, and a pulsed radio frequency of the source power And a synchronizer for synchronizing the application time of the signal to the full out of phase.

In one embodiment of the present invention, the upper electrode may be connected to a DC power supply that provides a direct current (DC) negative power to accelerate the negatively charged particles in the plasma toward the substrate.

In this case, the DC power unit may apply DC power to the upper electrode in the pulsed mode within the range of -50V to -1,000V, the application time of the DC power may be 5us to 10us.

The temperature of the upper electrode may be 100 ° C. to 300 ° C., the temperature of the lower electrode may be 100 ° C. to 350 ° C., and the inner wall temperature of the process chamber may be 50 to 200 ° C.

In one embodiment of the present invention, the etching apparatus using the plasma may be a device for etching the non-volatile metal film formed on the substrate by a high density plasma (HDP).

In accordance with another aspect of the present invention, a plasma etching method loads a substrate on which a thin film to be etched is formed in a process chamber. A process gas for generating a plasma is provided inside the process chamber. Source power is applied to the process gas in a pulsed mode to generate a plasma from the process gas. After stopping the application of the source power, bias power is applied to the substrate in pulsed mode to etch the thin film toward the substrate. Turn off the bias power and the source power. The injection of the process gas is blocked. The substrate is unloaded from the process chamber. In particular, the bias power and the source power are synchronized to have a complete antiphase pulse.

According to an embodiment of the present invention, after applying the bias power, the DC power is pulsed in the range of -50V to -1,000V to accelerate negatively charged particles in the plasma toward the substrate. The DC voltage may be turned off while the device is applied in a mold mode and the bias power is turned on.

At this time, the DC power is applied in a short pulse (short pulse), the application duration of the DC power may be 5us to 10us.

In one embodiment of the present invention, the radio frequency of the source power may have a range of 27MHz to 100MHz, the radio frequency of the bias power may have a range of 50kHz to 500kHz. In addition, in order to change the source power and the bias power into a pulsed mode, a power having a duty cycle of 20% to 90% and a radio frequency of 100Hz to 10kHz may be applied.

According to the present invention, while generating a plasma by minimizing the residual reaction product by applying the radio frequency of the bias power and the radio frequency of the source power in synchronization so that negatively charged particles in the plasma are directed toward the substrate, Good etching processes with high etching rates and vertical sidewall profiles can be performed. In particular, the radio frequency of the source power is adjusted high to maintain the etching gas in the plasma state, and the radio frequency of the bias power is adjusted low to inject negatively charged particles in the plasma to the substrate surface. At this time, the radio frequencies are pulsed and applied, and the application time is synchronized to have a perfect antiphase. As such, by adjusting, synchronizing and applying the radio frequencies of the etching apparatus, negatively charged particles incident toward the substrate can be accelerated.

According to the etching apparatus and the plasma etching method using the plasma of the present invention as described above, the radio frequency and source of the bias power to direct the negatively charged particles in the plasma to the thin film formed on the substrate when generating the plasma By synchronizing and applying the radio frequency of power to have an in-phase, it is possible to perform a good etching process with a high etching rate and a vertical sidewall profile while minimizing residual reaction products.

In particular, the radio frequency of the source power is adjusted high to maintain the etching gas in the plasma state, and the radio frequency of the bias power is adjusted low to inject negatively charged particles in the plasma to the substrate surface. At this time, the radio frequencies are pulsed and applied, and the application time is synchronized to have a perfect antiphase. As described above, by adjusting and synchronizing and applying the radio frequencies of the etching apparatus, negatively charged particles incident toward the substrate may be accelerated. In addition, the incident energy toward the substrate of the negatively-charged particles through the etching apparatus using the plasma is also controllable, and thus can be adjusted to have excellent etching characteristics.

Hereinafter, an etching apparatus and a plasma etching method using a plasma according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments, and is commonly used in the art. Those skilled in the art will be able to implement the invention in various other forms without departing from the spirit of the invention. That is, specific structural to functional descriptions are merely illustrated for the purpose of describing embodiments of the present invention, and the embodiments of the present invention may be embodied in various forms and should be construed as being limited to the embodiments described herein. Is not. It is not to be limited by the embodiments described in the text, it should be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the present invention.

Terms such as first and second may be used to describe various components, but such components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

When a component is said to be "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may exist in the middle. Will be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it will be understood that there is no other component in between. Other expressions describing the relationship between the components, such as "between" or "adjacent to", will also be interpreted as well.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "include" are intended to indicate that there is a feature, number, step, action, component, or combination thereof described, and one or more other features or numbers, It will be understood that it does not exclude in advance the possibility of the presence or addition of steps, actions, components, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries are to be interpreted as having meanings consistent with the meanings in the context of the related art, and are not construed in ideal or excessively formal meanings unless expressly defined in this application. .

1 is a configuration diagram illustrating an etching apparatus using plasma according to embodiments of the present invention. An etching apparatus using a plasma according to embodiments of the present invention is an etching apparatus using a plasma capable of efficiently etching a nonvolatile metal film formed on a substrate using a high density plasma (HDP).

Referring to FIG. 1, the etching apparatus 100 using plasma includes a bias power for applying a bias power transmitted to a process chamber 110 including a lower electrode 104 and an upper electrode 106, and a lower electrode 104. The unit 112, the source power unit 114 for applying the source power delivered to the upper electrode 106, and the application time of the radio frequency of the bias power and the source power can be synchronized to a substantially complete antiphase It includes a synchronization unit 120. In addition, the etching apparatus 100 using the plasma forms the process chamber 110 in a vacuum, and further includes a pump 122 for discharging the etching gas remaining in the process chamber 110.

The process chamber 110 provides a space in which plasma is generated from the process gas introduced through the gas providing unit 116 passing through the center of the upper electrode 106. In addition, the process chamber 110 provides a space for dry etching the film formed on the substrate 102 using the generated plasma. In one embodiment of the invention, the process chamber 110 may have a cylindrical shape. In addition, the upper portion of the process chamber 110 may have a flat structure or a hemispherical shape.

The lower electrode 104 may be positioned below the process chamber 110 and may have a disc shape. The lower electrode 104 is applied with a bias power to provide directionality to the ions of the plasma formed in the process chamber 110 on the substrate 102. In addition, the lower electrode 104 may also function as a chuck supporting the substrate 102 having a thin film formed thereon, which flows into the process chamber 110. In this case, the thin film formed on the substrate 102 and etched by plasma may correspond to a nonvolatile metal film. For example, the nonvolatile metal layer may include a nonvolatile metal such as cobalt (Co), gold (Au), platinum (Pt), aluminum (Al), tungsten (W), titanium (Ti), or the like.

The substrate 102 is disposed below the lower electrode 104 and is loaded onto the lower electrode 104 by a plurality of lift pins (not shown) disposed vertically through the lower electrode 104. ), Or may be unloaded from the lower electrode 104. The lift pins may be driven along a substantially vertical direction in the process chamber 110 by lifters (not shown) coupled to the bottom of the lower electrode 104.

In embodiments of the present invention, a bottom (or inside) of the lower electrode 104 may include a heater (not shown) for heating the substrate 102 supported on the lower electrode 104 and inside the process chamber 110. A temperature sensor (not shown) may be additionally provided to maintain the reaction temperature. Such a heater may be a lamp heater or a heater heater, a thermocouple thermometer may be used as the temperature sensor.

The upper electrode 106 is provided above the process chamber 110 to face the lower electrode 104. The upper electrode 106 may have a structure including a first electrode made of aluminum, a second electrode made of silicon, and a third electrode made of silicon. The upper electrode 106 may serve as a shower head. A first through hole connected to the gas providing part is formed in the first electrode of the upper electrode 106. A space is formed between the first electrode and the second electrode to accommodate a reaction gas for processing the substrate 102, and the reaction gas is disposed in the process chamber 110 in the second electrode and the third electrode. A plurality of through holes (not shown) are formed for uniformly providing the furnace.

The bias power unit 112 is connected to the lower electrode 104 to transfer the bias power to the lower electrode 104, and the source power unit 114 is connected to the upper electrode 106 to source power to the upper electrode 106. To pass. The bias power unit 112 and the source power unit 114 respectively apply the source power and the bias power to the process gas flowing into the process chamber 110 through the lower electrode 104 and the upper electrode 106, thereby performing the process. It serves to generate a plasma from the gas. In this case, the radio frequency of the source power and the radio frequency of the bias power may each be variably adjusted. To this end, a first variable part 112a capable of variably adjusting the radio frequency of the bias power is connected to the bias power part 112, and a second variable part capable of variably adjusting the radio frequency of the source power. 114a is connected to the source power unit 114. Therefore, when the nonvolatile metal film formed on the substrate 102 is etched, the first variable part 112a and the second variable part 114a are used to respectively adjust the radio frequency of the bias power and the radio frequency of the source power. You can adjust within the desired setting range. In embodiments of the present invention, the radio frequency of the source power may be set to about 27MHz to about 100MHz, the radio frequency of the bias power may be set to about 50kHz to about 500kHz.

According to embodiments of the present invention, the radio frequency of the source power and the radio frequency of the bias power may be applied in a pulsed mode, respectively, and may be applied in synchronization with a substantially complete out of phase. . In this case, in order to change the source power and the bias power into the pulsed mode, the duty cycle may be about 20% to about 90%, and a power having a radio frequency of about 100 Hz to about 10 kHz may be applied. have.

The synchronization unit 120 is connected to the bias power unit 112 and the source power unit 114, when the pulsed radio frequency of the bias power and the pulsed radio frequency of the source power is provided, the phase of the frequency is The role is to control the opposite. For example, the synchronization unit 120 may be adjusted to alternately apply within the respective setting ranges by applying the radio frequency of the source power and applying the radio frequency of the bias power after the up pulse period ends.

The etching apparatus using the plasma having the above-described configuration can form a pattern having a substantially vertical sidewall profile by etching thin films on a substrate by applying pulsed radio frequencies of source power and bias power in synchronization with an inverse phase. At the same time, since the thin film may be etched at a high etching rate, the etching efficiency of the thin film formed on the substrate may be greatly improved.

2 is a configuration diagram illustrating an etching apparatus using plasma according to other embodiments of the present invention. In FIG. 2, the etching apparatus 200 using the plasma has a configuration substantially similar to that of the etching apparatus 100 using the plasma described with reference to FIG. 1, except that the etching apparatus 200 further includes a DC power unit 218. .

Referring to FIG. 2, the etching apparatus 200 using plasma includes a lower electrode 204, an upper electrode 206, a process chamber 210, a bias power unit 212, a source power unit 214, and a gas providing unit. 216, a DC power unit 218, a synchronizer 220, and a pump 222.

In the etching apparatus 200 using the plasma, a DC power unit 218 connected to the upper electrode 206 to apply a direct current (DC) negative power after the application of the pulsed radio frequency of the bias power is additionally added. It is provided. Here, the DC negative power may be applied in the down pulse period of the source power. For example, negatively charged particles are intensively generated during the down pulse period of the source power, and the negatively charged particles move toward the substrate 202 as the bias power is applied. Accordingly, the DC negative power is applied during the down pulse period of the source power, thereby providing repulsive force to the negatively charged particles to increase the speed of the particles.

In embodiments of the present invention, the DC negative power may be applied in a short pulse, and the application duration of the DC negative power may be about 5 us to about 10 us. In addition, the DC voltage applied to the upper electrode 206 may be about −50V to about −1,000V.

As described above, an etching apparatus using a plasma including a DC power unit may increase the incident speed toward the substrate of negatively charged particles in the plasma generated by applying pulsed radio frequencies of source power and bias power. Can be. In addition, since the etching speed using negatively charged particles may be further controlled by adjusting the DC voltage, the etching efficiency of the thin film formed on the substrate may be further improved.

Hereinafter, a method of etching the nonvolatile metal film formed on the substrate using the etching apparatus using the plasma will be described in detail.

FIG. 3 is a flowchart illustrating a plasma etching method using the etching apparatus using the plasma shown in FIG. 2. 4 is a graph showing a wave mode of the source power according to the process time, FIG. 5 is a graph showing a wave mode of the bias power according to the process time, and FIG. 6 is a wave mode of the DC power according to the process time. The graph shown.

3 to 6, first, a substrate on which a thin film to be etched is performed is loaded into a process chamber (step S110). The substrate is located on a lower electrode disposed in the process chamber. The thin film may include a nonvolatile metal film. The substrate is loaded into a process chamber and then established process conditions are set in the process chamber. For example, the pressure and temperature in the process chamber are formed under appropriate conditions according to the type of the thin film.

According to embodiments of the present invention, the upper and lower electrodes and sidewalls of the process chamber are respectively maintained by being heated to a set temperature range. Accordingly, the temperature of the inner wall of the process chamber may be maintained high to assist in smoothly performing a desorption reaction of the reactant including the nonvolatile etching reactant. For example, the set temperature range of the upper electrode may be about 100 ° C to about 300 ° C, and the set temperature range of the lower electrode may be about 100 ° C to about 350 ° C. In addition, the set temperature range of the process chamber sidewall may be about 50 ℃ to about 200 ℃.

A process gas for generating a plasma is provided in the process chamber (step S120). For example, the process gas may include boron trichloride (BCl ₃ ) gas, chlorine (Cl ₂ ) gas, or the like.

Source power is applied to the process gas in a pulsed mode to generate a plasma from the process gas (step S130). In embodiments of the present invention, a plasma is generated from the process gas by applying source power in a pulsed mode at a source power unit connected to the upper electrode. At this time, the positively charged particles and the negatively charged particles and electrons are formed in the process gas formed in the plasma state. The radio frequency of the pulsed source power may have a very high frequency (VHF) range of about 27 MHz to about 100 MHz in order to stably maintain the plasma up to 5 mT or less. For example, the radio frequency of the pulsed source power may range from about 60 MHz to about 80 MHz.

After the application of the source power is stopped, bias power is pulsed to the substrate so that the plasma causes an etching reaction to the nonvolatile metal film toward the substrate (step S140). The bias power is provided to the substrate through a bias power unit connected to the lower electrode. Bias power is applied after the application of the source power stops, whereby collision occurs between the electrons and the positively charged particles, thereby intensively generating negatively charged particles. The radio frequency of the pulsed bias power is adjusted to a low frequency (LF) of about 50 kHz to about 500 kHz so that the negatively charged particles cause an etching reaction with the nonvolatile metal film. When the radio frequency of the bias power has a range higher than about 500 kHz, the negatively charged particles in the generated plasma correspond to out of the reaction time, and since only relatively light electrons correspond within the reaction time, When DC bias power is provided to the substrate, the negatively charged particles are hardly incident in the substrate direction.

In embodiments of the present invention, the pulsed radio frequency of the source power and the pulsed radio frequency of the bias power are synchronized in time to achieve a complete out of phase. That is, negatively-charged particles are intensively generated by applying the bias power during the down pulse period of the source power, and the negatively-charged particles are generated by controlling the bias power. Will be directed in the direction.

A negative DC power is applied in a short pulse to the upper electrode during the down pulse period of the source power so as to accelerate negatively charged particles in the plasma in the direction of the substrate (step S150). By applying the negative DC power during the down pulse period of the source power, repulsive forces are generated between the negatively charged particles in the plasma and the upper electrode to increase the incident rate of the particles toward the substrate. do. The DC power may range from about −50V to about −1000V, and the duration of application of the DC power may be about 5us to about 10us.

When the etching process of the nonvolatile metal film formed on the substrate is completed, the negative DC power is turned off (step S160). In this case, the negative DC power may be turned off while the bias power is turned on.

The bias power is turned off (step S170), and then the source power is turned off (step S180). Next, injection of the process gas used in the etching process is blocked (step S190). Thereafter, the process gas and the reaction product inside the process chamber are pumped to form a vacuum state, and the substrate on which the etching reaction is completed is unloaded from the process chamber (step S200).

As described above, by applying both the radio frequency of the source power and the radio frequency of the bias power in a pulsed form and synchronizing the application time to achieve a substantially complete out of phase, high etching rate and vertical Good etching processes with sidewall profiles can be performed. In addition, the incident energy toward the substrate of the negatively-charged particles through the application of the negative DC power in the etching apparatus using the plasma can be controlled, so that it can be adjusted to have excellent etching characteristics. In addition, by increasing the desorption reaction of the reaction product by heating the process chamber, it is possible to minimize the residual of the non-volatile reaction product and etch ion residue, and also minimize the corrosive residual chlorine (Cl) by anion etching.

 7A to 7C show the distribution of process gas particles in a plasma state formed inside the process chamber when synchronizing the application time of the radio frequency of the source power and the bias power to full antiphase. FIG. 7A is a graph showing the amount of production of positively charged particles in the plasma according to the processing time, FIG. 7B is a graph showing the electron density and temperature according to the processing time in the plasma, and FIG. Is a graph showing the amount produced according to the processing time of the particles charged with).

Referring to FIGS. 7A to 7C, as a result of etching the nonvolatile metal film using the plasma, the density and temperature of electrons in the plasma generated during the down pulse period of the source power are drastically reduced. The probability of reacting by colliding with the charged particles is increased to confirm that the negatively charged particles are concentrated.

In addition, the negatively charged particles generated at the maximum in the down pulse period of the source power can be easily incident in the direction of the substrate through the control of the bias power. In this case, the incident amount of the negatively charged particles toward the substrate may be adjusted by controlling a duty ratio occupied by a pulse during the entire period. By minimizing the duty ratio, the incident amount of negatively charged particles in the plasma may be maximized.

In embodiments of the present invention, anions having excellent etching characteristics with respect to the non-volatile metal film formed on the substrate by applying radio frequencies as antiphase pulses so that negatively charged particles in the plasma are generated intensively Etching can be performed. In addition, the reaction product and the corrosive etching gas residue may be completely removed by heating the inner wall of the process chamber during the anion etching, and the sidewall profile of the etched nonvolatile metal layer may be vertically formed.

According to the present invention, by generating the plasma negatively charged particles by applying radio frequencies in the form of a reverse phase in the generation of plasma, it is possible to provide an etching apparatus capable of anion etching the thin film formed on the substrate. Can be. In particular, the etching apparatus using the plasma capable of anion etching can be etched to have a vertical sidewall profile during the etching of the nonvolatile metal film, and minimize the residue of the etch ion residue. In addition, a high etching rate may be provided, and the etching rate may be usefully controlled through control of negative DC power or bias power. Therefore, in the anion etching process of the nonvolatile metal film using the etching apparatus, the etching efficiency may be increased.

Although the above has been described with reference to the embodiments of the present invention, those skilled in the art may vary the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. It will be understood that modifications and changes can be made.

1 is a configuration diagram illustrating an etching apparatus using plasma according to embodiments of the present invention.

2 is a configuration diagram illustrating an etching apparatus using plasma according to other embodiments of the present invention.

FIG. 3 is a flowchart illustrating a plasma etching method using the etching apparatus using the plasma shown in FIG. 2.

4 is a graph showing a wave mode of source power according to a process time.

5 is a graph showing a wave-type mode of bias power according to process time.

6 is a graph showing the wave mode of the DC power according to the process time.

7A is a graph showing the amount of production according to the processing time of positively charged particles in the plasma.

7B is a graph showing electron density and temperature according to processing time in plasma.

7C is a graph showing the amount of production according to the processing time of negatively charged particles in the plasma.

<Description of the symbols for the main parts of the drawings>

100, 200: etching apparatus using plasma

102, 202: substrate 104, 204: lower electrode

106, 206: upper electrodes 110, 210: process chamber

112, 212: bias power section 114, 214: source power section

116, 216: gas providing unit 120, 220: synchronization unit

122, 222: pump 218: DC power unit

Claims (10)

Etching the thin film formed on the substrate disposed on the lower electrode using a plasma generated by the lower electrode and the upper electrode, the bias power delivered to the lower electrode and the source power delivered to the upper electrode A process chamber in which the process is performed; And A bias power unit for applying a radio frequency of the bias power in a pulsed mode within a range of 50 kHz to 500 kHz; A source power unit applying a radio frequency of the source power in a pulsed mode within a range of 27 MHz to 500 MHz; And And a synchronization unit configured to synchronize the application time of the pulsed radio frequency of the bias power and the pulsed radio frequency of the source power to a complete out of phase. 2. The etching apparatus of claim 1, wherein the upper electrode is connected to a DC power unit providing direct current (DC) negative power to accelerate negatively charged particles in the plasma toward the substrate. . The plasma power supply of claim 1, wherein the DC power unit applies DC power to the upper electrode in a pulsed mode within a range of -50V to -1,000V, and the application time of the DC power is 5us to 10us. Etching device using. According to claim 1, wherein the temperature of the upper electrode is 100 ℃ to 300 ℃, the temperature of the lower electrode is 100 ℃ to 350 ℃, the inner wall temperature of the process chamber is 50 to 200 ℃ using a plasma, characterized in that Etching device. The etching apparatus of claim 1, wherein the etching apparatus using plasma is an apparatus for etching a nonvolatile metal film formed on a substrate by a high density plasma (HDP). Loading a substrate on which a thin film to be etched is formed in a process chamber; Providing a process gas for generating a plasma inside said process chamber; Applying source power to the process gas in a pulsed mode to generate a plasma from the process gas; After stopping the application of the source power, applying a bias power to the substrate in a pulsed mode to etch the thin film toward the substrate; Turning off the bias power and the source power; Blocking injection of the process gas; And Unloading the substrate from the process chamber, wherein the bias power and the source power are synchronized to have a complete antiphase pulse. The method of claim 6, wherein after applying the bias power, Applying DC power in a pulsed mode within a range of -50V to -1,000V to accelerate negatively-charged particles in the plasma toward the substrate; And  And turning off the DC voltage when the bias power is turned on. 8. The plasma etching method of claim 7, wherein the DC power is applied in a short pulse, and the duration of application of the DC power is 5us to 10us. The method of claim 6, wherein the radio frequency of the source power has a range of 27MHz to 100MHz, the radio frequency of the bias power has a range of 50kHz to 500kHz. The method of claim 6, wherein in order to change the source power and the bias power into a pulsed mode, a power having a duty cycle of 20% to 90% and a radio frequency of 100Hz to 10kHz is applied. Plasma etching method.

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