JP2024040055A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

To provide a substrate processing method and a substrate processing apparatus that suppresses particle adhesion to a substrate.SOLUTION: A substrate processing method comprises the steps of: applying a first substrate processing to a substrate by setting the temperature of the substrate as the first processing temperature and the chamber pressure as the first pressure; applying a second substrate processing to the substrate by setting the temperature of the substrate to which the first substrate processing has been applied as the second processing temperature and the chamber pressure as the second pressure: after the steps of applying the first substrate processing and before the step of applying the second substrate processing, the step of adjusting the temperature of the substrate support portion supporting the substrate so that the temperature of the substrate is raised from the first processing temperature to the second processing temperature, and the temperature adjusting step adjusts the temperature of the substrate support portion with the chamber pressure set to the third pressure that is higher than the first and second pressures.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a substrate processing method and a substrate processing apparatus.

Patent Document 1 describes a first oxidation step in which the surface of the substrate at a first temperature is modified by plasma of a first oxygen-containing gas to form a first oxide layer; a second oxide layer in which the thickness of the first oxide layer is increased by heating to a high second temperature and modifying the surface of the substrate on which the first oxide layer is formed by plasma of a second oxygen-containing gas; A second oxidation step for forming a semiconductor device is disclosed.

International Publication No. 2020/54038

In one aspect, the present disclosure provides a substrate processing method and a substrate processing apparatus that suppress particles from adhering to a substrate.

In order to solve the above problems, according to one aspect, a step of performing a first substrate treatment on the substrate at a temperature of the substrate at a first treatment temperature and a chamber pressure at a first pressure; a step of performing a second substrate treatment on the substrate by setting the temperature of the substrate subjected to the second treatment temperature as a second treatment temperature and setting the chamber pressure as a second pressure; and a step of performing the first substrate treatment, and then the second before the step of performing substrate processing, a step of adjusting the temperature of a substrate support part that supports the substrate so that the temperature of the substrate becomes from the first processing temperature to the second processing temperature, A substrate processing method is provided, in which the adjusting step adjusts the temperature of the substrate support section while the chamber pressure is set to a third pressure higher than the first pressure and the second pressure.

According to one aspect, it is possible to provide a substrate processing method and a substrate processing apparatus that suppress particles from adhering to a substrate.

An example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. An example of a flowchart showing substrate processing. An example of a graph showing changes in substrate temperature and chamber pressure. An example of a schematic diagram showing the inside of a plasma processing chamber in a temperature control process.

Various exemplary embodiments will be described in detail below with reference to the drawings. In addition, the same reference numerals are given to the same or corresponding parts in each drawing.

[Substrate processing system]
An example of the configuration of a plasma processing system (substrate processing system) will be described below. FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus (substrate processing apparatus) 1. As shown in FIG.

The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control section 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber (chamber) 10, a gas supply section 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10 . The gas introduction section includes a shower head 13. Substrate support 11 is arranged within plasma processing chamber 10 . The shower head 13 is arranged above the substrate support section 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space 10s defined by a shower head 13, a side wall 10a of the plasma processing chamber 10, and a substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas exhaust port for discharging gas from the plasma processing space 10s. Plasma processing chamber 10 is grounded. The shower head 13 and the substrate support section 11 are electrically insulated from the casing of the plasma processing chamber 10.

The substrate support part 11 includes a main body part 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in plan view. The substrate W is placed on the central region 111a of the main body 111, and the ring assembly 112 is placed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

In one embodiment, body portion 111 includes a base 1110 and an electrostatic chuck 1111. Base 1110 includes a conductive member. The conductive member of the base 1110 can function as a bottom electrode. Electrostatic chuck 1111 is placed on base 1110. Electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within ceramic member 1111a. Ceramic member 1111a has a central region 111a. In one embodiment, ceramic member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulation member, or may be placed on both the electrostatic chuck 1111 and the annular insulation member. Furthermore, at least one RF/DC electrode coupled to an RF (Radio Frequency) power source 31 and/or a DC (Direct Current) power source 32, which will be described later, may be arranged within the ceramic member 1111a. In this case, at least one RF/DC electrode functions as a bottom electrode. An RF/DC electrode is also referred to as a bias electrode if a bias RF signal and/or a DC signal, as described below, is supplied to at least one RF/DC electrode. Note that the conductive member of the base 1110 and at least one RF/DC electrode may function as a plurality of lower electrodes. Further, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

Ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is made of a conductive or insulating material, and the cover ring is made of an insulating material.

Further, the substrate support unit 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater 1111c, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, a channel 1110a is formed within the base 1110 and one or more heaters are disposed within the ceramic member 1111a of the electrostatic chuck 1111. Furthermore, the heater 1111c is provided within the electrostatic chuck 1111, for example, and is connected to the heater power source 15. Further, the substrate support section 11 may include a heat transfer gas supply section 50 configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. The heat transfer gas supply unit 50 supplies a space 55 between the back surface of the substrate W placed on the electrostatic chuck 1111 and the top surface (substrate support surface) of the electrostatic chuck 1111 from the gas source 51 via the flow path 52. (See FIG. 4 described later), a heat transfer gas such as He gas is supplied.

The shower head 13 is configured to introduce at least one processing gas from the gas supply section 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the shower head 13, the gas introduction section may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.

The gas supply 20 may include at least one gas source 21 and at least one flow controller 22 . In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 to the showerhead 13 via a respective flow controller 22 . Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, gas supply 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one process gas.

Power source 30 includes an RF power source 31 coupled to plasma processing chamber 10 via at least one impedance matching circuit. RF power source 31 is configured to supply at least one RF signal (RF power) to at least one bottom electrode and/or at least one top electrode. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, RF power source 31 may function as at least part of a plasma generation unit configured to generate a plasma from one or more process gases in plasma processing chamber 10 . Further, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W.

In one embodiment, the RF power source 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generation section 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit, and generates a source RF signal (source RF power) for plasma generation. It is configured as follows. In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to at least one bottom electrode and/or at least one top electrode.

The second RF generating section 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same or different than the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 100kHz to 60MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are provided to at least one bottom electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power source 30 may also include a DC power source 32 coupled to plasma processing chamber 10 . The DC power supply 32 includes a first DC generation section 32a and a second DC generation section 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one bottom electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one top electrode.

In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode. The voltage pulse may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and the at least one bottom electrode. Therefore, the first DC generation section 32a and the waveform generation section constitute a voltage pulse generation section. When the second DC generation section 32b and the waveform generation section constitute a voltage pulse generation section, the voltage pulse generation section is connected to at least one upper electrode. The voltage pulse may have positive polarity or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Note that the first and second DC generation units 32a and 32b may be provided in addition to the RF power source 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b. good.

The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. Evacuation system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

Control unit 2 processes computer-executable instructions that cause plasma processing apparatus 1 to perform various steps described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized by, for example, a computer 2a. The processing unit two a1 may be configured to read a program from the storage unit two a2 and perform various control operations by executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2, and is read out from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[Substrate processing]
Next, an example of substrate processing using the plasma processing apparatus 1 shown in FIG. 1 will be described with reference to FIGS. 2 and 3. FIG. 2 is an example of a flowchart showing substrate processing. FIG. 3 is an example of a graph showing changes in substrate temperature and chamber pressure. In FIG. 3, the temperature [° C.] of the substrate W is shown by a broken line, and the pressure [mTorr (mT)] inside the plasma processing chamber 10 is shown by a solid line.

Note that before the flow shown in FIG. 2 starts, the substrate W is transported into the plasma processing chamber 10 and supported by the substrate support section 11. Further, by applying a DC voltage to the electrostatic electrode 1111b, the substrate W placed on the electrostatic chuck 1111 is electrostatically attracted to the electrostatic chuck 1111. In one embodiment, steps S101 to S109 described below are performed while the substrate W is electrostatically attracted. Further, a heat transfer gas (for example, He gas) is supplied between the back surface of the substrate W placed on the electrostatic chuck 1111 and the upper surface (substrate support surface) of the electrostatic chuck 1111 by the heat transfer gas supply unit 50. Supplied. Note that the pressure of the heat transfer gas supplied between the back surface of the substrate W placed on the electrostatic chuck 1111 and the top surface (substrate support surface) of the electrostatic chuck 1111 is, for example, the pressure inside the plasma processing chamber 10. It is higher than that.

In step S101, the control unit 2 performs a first substrate processing step in which the substrate W is subjected to a first substrate processing. Here, the control unit 2 controls the temperature control module (heater power supply 15, etc.) to control the temperature of the substrate W to the processing temperature T1. Note that "controlling (adjusting) the temperature of the substrate W to the processing temperature T" refers to controlling (adjusting) the temperature of the substrate support part 11 so that the temperature of the substrate W becomes the processing temperature T. However, if a temperature control module such as a heater that directly controls the temperature of the substrate W is included, the present invention is not limited to this. Further, the control unit 2 controls the flow rate controller 22 of the gas supply unit 20 to supply the first processing gas into the plasma processing chamber 10 . Further, the control unit 2 controls the exhaust system 40 to control the pressure inside the plasma processing chamber 10 to the pressure P1. As a result, the first substrate treatment is performed on the substrate W supported by the substrate support section 11. Note that the first substrate treatment may be a substrate treatment that generates plasma, or may be a substrate treatment that does not generate plasma, such as heat treatment. Further, in the first substrate processing, the control unit 2 controls the power supply 30 to supply at least one RF signal and/or at least one DC signal to at least one lower electrode and/or at least one upper electrode. You may. That is, in step S101, the substrate W is maintained at the processing temperature T1, and the inside of the plasma processing chamber 10 is maintained at the pressure P1. When the first substrate processing is completed, the processing of the control unit 2 proceeds to step S102.

In step S102, the control unit 2 performs a pressure increasing step to increase the pressure inside the plasma processing chamber 10. Here, the control unit 2 controls the temperature control module (heater power supply 15, etc.) to maintain the temperature of the substrate W at the processing temperature T1. Further, the control unit 2 controls the flow rate controller 22 of the gas supply unit 20 to supply gas into the plasma processing chamber 10 . Then, the control unit 2 controls the exhaust system 40 to increase the pressure inside the plasma processing chamber 10 from the pressure P1 to the pressure P11. In other words, the control unit 2 controls the exhaust system 40 to adjust (increase) the pressure in the plasma processing chamber 10 to the pressure P11 in the plasma processing chamber 10 in the temperature adjustment step. Note that the pressure P11 is a pressure higher than the pressure P1 for the first substrate processing (P1<P11) and higher than the pressure P2 for the second substrate processing described later (P2<P11). That is, in step S102, the substrate W is maintained at the processing temperature T1, and the pressure inside the plasma processing chamber 10 is adjusted (pressurized) to P11. When the pressure inside the plasma processing chamber 10 is adjusted (pressurized) to P11, the process of the control unit 2 proceeds to step S103.

In step S103, the control unit 2 performs a temperature adjustment process to adjust the temperature of the substrate W. Here, the control unit 2 controls the flow rate controller 22 of the gas supply unit 20 to supply gas into the plasma processing chamber 10 . Further, the control unit 2 controls the exhaust system 40 to maintain the pressure inside the plasma processing chamber 10 at the pressure P11. The control unit 2 controls the temperature control module (heater power supply 15, etc.) to control the substrate support unit that supports the substrate W so that the temperature of the substrate W changes from the processing temperature T1 to the processing temperature T2 (T2<T1). 11 to adjust the temperature (lower the temperature). In other words, the control unit 2 controls the temperature control module to adjust (lower the temperature) the temperature of the substrate W to the processing temperature T2 of the substrate W in the second substrate processing. That is, in step S103, the pressure inside the plasma processing chamber 10 is maintained at P11, and the temperature of the substrate W is adjusted (temperature lowered) to the processing temperature T2. When the temperature of the substrate W is adjusted (temperature lowered) to the processing temperature T2, the process of the control unit 2 proceeds to step S104.

In step S104, the control unit 2 performs a pressure lowering step to lower the pressure inside the plasma processing chamber 10. Here, the control unit 2 controls the temperature control module (heater power supply 15, etc.) to maintain the temperature of the substrate W at the processing temperature T2. Further, the control unit 2 controls the flow rate controller 22 of the gas supply unit 20 to supply gas into the plasma processing chamber 10 . Then, the control unit 2 controls the exhaust system 40 to lower the pressure inside the plasma processing chamber 10 from the pressure P11 to the pressure P2. In other words, the control unit 2 controls the exhaust system 40 to adjust (reduce) the pressure within the plasma processing chamber 10 to the pressure P2 within the plasma processing chamber 10 in the second substrate processing. That is, in step S104, the substrate W is maintained at the processing temperature T2, and the pressure inside the plasma processing chamber 10 is adjusted (pressurized) to P2. When the pressure inside the plasma processing chamber 10 is adjusted (lowered) to P2, the process of the control unit 2 proceeds to step S105.

In step S105, the control unit 2 performs a second substrate processing step of subjecting the substrate W, which has been subjected to the first substrate processing, to a second substrate processing. Here, the control unit 2 controls the temperature control module (heater power supply 15, etc.) to control the temperature of the substrate W to the processing temperature T2. Further, the control unit 2 controls the flow rate controller 22 of the gas supply unit 20 to supply the second processing gas into the plasma processing chamber 10 . Further, the control unit 2 controls the exhaust system 40 to control the pressure inside the plasma processing chamber 10 to the pressure P2. Thereby, the second substrate processing is performed on the substrate W supported by the substrate support section 11. Note that the second substrate treatment may be a substrate treatment that generates plasma, or may be a substrate treatment that does not generate plasma, such as heat treatment. Further, in the second substrate processing, the control unit 2 controls the power supply 30 to supply at least one RF signal and/or at least one DC signal to at least one lower electrode and/or at least one upper electrode. You may. That is, in step S105, the substrate W is maintained at the processing temperature T2, and the inside of the plasma processing chamber 10 is maintained at the pressure P2. When the second substrate processing is completed, the processing of the control unit 2 proceeds to step S106.

In step S106, the control unit 2 performs a pressure increasing step to increase the pressure inside the plasma processing chamber 10. Here, the control unit 2 controls the temperature control module (heater power supply 15, etc.) to maintain the temperature of the substrate W at the processing temperature T2. Further, the control unit 2 controls the flow rate controller 22 of the gas supply unit 20 to supply gas into the plasma processing chamber 10 . Then, the control unit 2 controls the exhaust system 40 to increase the pressure inside the plasma processing chamber 10 from the pressure P2 to the pressure P12. In other words, the control unit 2 controls the exhaust system 40 to adjust (increase) the pressure in the plasma processing chamber 10 to the pressure P12 in the plasma processing chamber 10 in the temperature adjustment step. Note that the pressure P12 is a pressure higher than the pressure P2 for the second substrate processing (P2<P12) and higher than the pressure P3 for the third substrate processing described later (P3<P12). Moreover, the pressure P11 and the pressure P12 may be the same pressure or may be different. That is, in step S106, the substrate W is maintained at the processing temperature T2, and the pressure inside the plasma processing chamber 10 is adjusted (pressurized) to P12. When the pressure inside the plasma processing chamber 10 is adjusted (pressurized) to P12, the process of the control unit 2 proceeds to step S107.

In step S107, the control unit 2 performs a temperature adjustment process to adjust the temperature of the substrate W. Here, the control unit 2 controls the flow rate controller 22 of the gas supply unit 20 to supply gas into the plasma processing chamber 10 . The control unit 2 also controls the exhaust system 40 to maintain the pressure inside the plasma processing chamber 10 at pressure P12. Then, the control unit 2 controls the temperature control module (heater power supply 15, etc.) to control the substrate support unit that supports the substrate W so that the temperature of the substrate W changes from the processing temperature T2 to the processing temperature T3 (T2<T3). Adjust the temperature (raise the temperature) of 11. In other words, the control unit 2 controls the temperature control module to adjust (raise) the temperature of the substrate W to the processing temperature T3 of the substrate W in the third substrate processing. That is, in step S107, the pressure inside the plasma processing chamber 10 is maintained at P12, and the temperature of the substrate W is adjusted (heated) to the processing temperature T3. When the temperature of the substrate W is adjusted (heated up) to the processing temperature T3, the process of the control unit 2 proceeds to step S108.

In step S108, the control unit 2 performs a pressure lowering step to lower the pressure inside the plasma processing chamber 10. Here, the control unit 2 controls the temperature control module (heater power supply 15, etc.) to maintain the temperature of the substrate W at the processing temperature T3. The control unit 2 also controls the flow rate controller 22 of the gas supply unit 20 to supply gas into the plasma processing chamber 10 . The controller 2 then controls the exhaust system 40 to lower the pressure inside the plasma processing chamber 10 from the pressure P12 to the pressure P3. In other words, the control unit 2 controls the exhaust system 40 to adjust (reduce) the pressure in the plasma processing chamber 10 to the pressure P3 in the plasma processing chamber 10 in the third substrate processing. That is, in step S108, the substrate W is maintained at the processing temperature T3, and the pressure inside the plasma processing chamber 10 is adjusted (pressurized) to P3. When the pressure inside the plasma processing chamber 10 is adjusted (lowered) to P3, the process of the control unit 2 proceeds to step S109.

In step S109, the control unit 2 performs a third substrate processing step of performing a third substrate processing on the substrate W that has been subjected to the first substrate processing and the second substrate processing. Here, the control unit 2 controls the temperature control module (heater power supply 15, etc.) to control the temperature of the substrate W to the processing temperature T3. The control unit 2 also controls the flow rate controller 22 of the gas supply unit 20 to supply the third processing gas into the plasma processing chamber 10 . Further, the control unit 2 controls the exhaust system 40 to control the pressure inside the plasma processing chamber 10 to the pressure P3. Thereby, the third substrate processing is performed on the substrate W supported by the substrate support section 11. Note that the third substrate treatment may be a substrate treatment that generates plasma, or may be a substrate treatment that does not generate plasma, such as heat treatment. Further, in the third substrate processing, the control unit 2 controls the power supply 30 to supply at least one RF signal and/or at least one DC signal to at least one lower electrode and/or at least one upper electrode. You may. That is, in step S109, the substrate W is maintained at the processing temperature T3, and the inside of the plasma processing chamber 10 is maintained at the pressure P3.

Thereafter, the heat transfer gas between the back surface of the substrate W placed on the electrostatic chuck 1111 and the top surface (substrate support surface) of the electrostatic chuck 1111 is exhausted. Then, the electrostatic adsorption by the electrostatic chuck 1111 is released. Then, the substrate W is carried out from the plasma processing chamber 10.

Next, the temperature adjustment steps S103 and S107 will be further explained. FIG. 4 is an example of a schematic diagram showing the inside of the plasma processing chamber 10 in the temperature control steps S103 and S107.

An annular protrusion 53 and a plurality of dotted protrusions 54 are formed on the upper surface (substrate support surface) of the electrostatic chuck 1111. The annular protrusion 53 is formed in an annular shape along the outer periphery of the central region 111a. When the substrate W is placed on the electrostatic chuck 1111, the annular protrusion 53 supports the substrate W by making the upper surface of the annular protrusion 53 come into contact with the back surface of the substrate W. A plurality of dot-like protrusions 54 are arranged within the annular protrusion 53 when the electrostatic chuck 1111 is viewed from above. When the substrate W is placed on the electrostatic chuck 1111, the top surface of the dot-like protrusion 54 comes into contact with the back surface of the substrate W, and supports the substrate W.

Further, a space 55 to which heat transfer gas is supplied is formed between the back surface of the substrate W placed on the electrostatic chuck 1111 and the top surface (substrate support surface) of the electrostatic chuck 1111. Furthermore, the annular protrusion 53 functions as a sealing band that seals the heat transfer gas by coming into contact with the outer edge of the back surface of the substrate W and being in close contact with it by electrostatic adsorption.

Here, in the temperature adjustment steps S103 and S107, a temperature difference occurs between the substrate W and the electrostatic chuck 1111 due to thermal resistance between the substrate W and the electrostatic chuck 1111. This causes a difference in thermal expansion between the substrate W and the electrostatic chuck 1111. Furthermore, the electrostatic chuck 1111 made of a ceramic member and the substrate W made of silicon or the like are different materials and have different coefficients of thermal expansion. This also causes a difference in thermal expansion between the substrate W and the electrostatic chuck 1111.

This difference in thermal expansion causes friction between the top surface of the annular protrusion 53 and the back surface of the substrate W in the temperature adjustment steps S103 and S107. Due to this rubbing, a small amount of heat transfer gas may be blown out from the gap between the upper surface of the annular protrusion 53 and the back surface of the substrate W into the plasma processing space 10s. In FIG. 4, the heat transfer gas that is blown out is schematically indicated by an arrow 61. This ejected heat transfer gas may cause particles in the plasma processing space 10s to be thrown up, and the particles may adhere to the outer edge of the upper surface of the substrate W. For example, deposits deposited on the back end of the substrate W or the shoulder of the electrostatic chuck 1111 are thrown up as particles.

On the other hand, according to the substrate processing shown in FIGS. 2 and 3, in the temperature control steps S103 and S107, the pressure inside the plasma processing chamber 10 is set to a pressure ( P11, P12).

As a result, in the temperature control steps S103 and S107, the pressure difference between the pressure in the space 55 and the pressure in the plasma processing chamber 10 is reduced, and the ejected water is emitted from the gap between the top surface of the annular protrusion 53 and the back surface of the substrate W. heat transfer gas is reduced. Therefore, the number of particles that are thrown up is reduced, and the number of particles that adhere to the outer edge of the upper surface of the substrate W is also reduced.

In addition, a force is generated on the substrate W to press the substrate W against the electrostatic chuck 1111 due to electrostatic adsorption of the electrostatic chuck 1111, and a pressure difference between the pressure inside the plasma processing chamber 10 and the pressure inside the space 55 causes the substrate W to be pressed against the electrostatic chuck 1111. A peeling force is generated from the electrostatic chuck 1111. By increasing the pressure inside the plasma processing chamber 10 to pressures P11 and P12, the pressure difference is reduced, and the force for peeling the substrate W off the electrostatic chuck 1111 is reduced. As a result, the force for pressing the substrate W against the electrostatic chuck 1111 (see the white arrow in FIG. 4) increases.

In this way, by increasing the force that presses the substrate W against the electrostatic chuck 1111, the force that presses the substrate W against the annular protrusion 53 increases, and the gap between the top surface of the annular protrusion 53 and the back surface of the substrate W increases. Reduces heat transfer gas leaking from the Therefore, the number of particles that are thrown up is reduced, and the number of particles that adhere to the outer edge of the upper surface of the substrate W is also reduced.

Further, in the pressure increasing steps S102 and S106 before the temperature adjustment steps S103 and S107, the temperature of the substrate W is maintained at the temperature of the previous step (S101, S105). Thereby, it is possible to prevent friction between the upper surface of the annular protrusion 53 and the back surface of the substrate W due to the difference in thermal expansion in the pressure increasing steps S102 and S106. Further, leakage of heat transfer gas is prevented, and particles are prevented from adhering to the outer edge of the upper surface of the substrate W.

In addition, in the pressure reduction steps S104 and S108 following the temperature adjustment steps S103 and S107, the temperature of the substrate W is maintained at the temperature of the next steps (S105 and S109). This makes it possible to prevent friction caused by differences in thermal expansion between the upper surface of the annular protrusion 53 and the rear surface of the substrate W in the pressure reduction steps S104 and S108. It also prevents leakage of heat transfer gas and prevents particles from adhering to the outer edge of the upper surface of the substrate W.

Note that the pressure of the heat transfer gas in the space 55 is, for example, 1 [Torr] or more and 50 [Torr] or less (133 [Pa] or more and 6650 [Pa] or less). The pressures P1 to P3 in the plasma processing chamber 10 in the substrate processing steps S101, S105, and S109 are 5 [mTorr] or more and 1000 [mTorr] or less (0.665 [Pa] or more and 133 [Pa] or less). Further, the pressures P11 and P12 inside the plasma processing chamber 10 in the temperature adjustment steps S103 and S107 are higher than the pressures P1 to P3. Furthermore, it is preferable that the pressures P11 and P12 be at least twice the pressures P1 to P3. Furthermore, it is more preferable that the pressures P11 and P12 are 5 times or more. For example, when the pressures P1 to P3 are about 100 [mTorr] (13.3 [Pa]), the pressures P11 and P12 are preferably 200 [mTorr] (26.6 [Pa]) or more, and More preferably, it is 500 [mTorr] (66.5 [Pa]) or more. This prevents heat transfer gas from leaking and particles from adhering to the outer edge of the upper surface of the substrate W.

Further, in the pressure increasing step S102, the temperature adjusting step S103, and the pressure lowering step S104, the gas supply unit 20 may supply, for example, an inert gas (for example, N ₂ gas, Ar gas, etc.) into the plasma processing chamber 10. Further, when the next second substrate processing step S105 is a step of performing plasma processing, in the pressure increasing step S102, the temperature control step S103, and the pressure lowering step S104, the gas supply unit 20 supplies the plasma processing chamber 10 with, for example, a second substrate processing step. A second processing gas, which is the gas in step S105, may be supplied. Thereby, the inside of the plasma processing chamber 10 can be made into an atmosphere of the second processing gas.

Similarly, in the pressure increase step S106, the temperature adjustment step S107, and the pressure decrease step S108, the gas supply unit 20 may supply, for example, an inert gas (for example, N ₂ gas, Ar gas, etc.) into the plasma processing chamber 10. . Further, when the next third substrate processing step S109 is a step of plasma processing, in the pressure increasing step S106, the temperature control step S107, and the pressure lowering step S108, the gas supply unit 20 supplies, for example, the third substrate processing step in the plasma processing chamber 10. A third processing gas, which is the gas in step S109, may be supplied. Thereby, the inside of the plasma processing chamber 10 can be made into an atmosphere of the third processing gas.

In addition, in the pressure increasing step S102 and the temperature adjustment step S103, the flow rate of the gas supplied from the gas supply unit 20 into the plasma processing chamber 10 is increased than the flow rate of the processing gas supplied in the second substrate processing step S105. Good too. Thereby, the time required for boosting the voltage can be shortened.

Further, in the pressure increasing step S102, the temperature adjusting step S103, and the pressure lowering step S104, the opening degree of the pressure regulating valve of the exhaust system 40 may be increased. Thereby, the amount of exhaust gas can be increased and particles can be suitably discharged from inside the plasma processing chamber 10.

Furthermore, in the example shown in FIG. 3, the case where the temperature adjustment step S103 lowers the temperature of the substrate W has been described as an example. That is, in the first substrate processing step S101, the substrate W is subjected to the first substrate processing while the substrate W is at the processing temperature T1 (first processing temperature) and the inside of the chamber is set at the pressure P1 (first pressure). Further, in the second substrate processing step S105, the substrate W is heated to a processing temperature T2 (second processing temperature) lower than the processing temperature T1 of the first substrate processing step S101, and the inside of the plasma processing chamber 10 is set to a pressure P2 (second pressure). As a result, the substrate W is subjected to a second substrate treatment. Further, in the temperature adjustment step S103 performed after the first substrate processing step S101 and before the second substrate processing step S105, the substrate W is processed with the pressure P11 (third pressure) inside the plasma processing chamber 10. The temperature is lowered from temperature T1 to processing temperature T2.

The temperature adjustment step S103 is not limited to a case where the temperature of the substrate W is lowered, but may be a case where the temperature of the substrate W is raised. That is, in the first substrate processing step S101, the substrate W is subjected to the first substrate processing while the substrate W is at the processing temperature T1 (first processing temperature) and the inside of the chamber is set at the pressure P1 (first pressure). Further, in the second substrate processing step S105, the substrate W is heated to a processing temperature T2 (second processing temperature) higher than the processing temperature T1 of the first substrate processing step S101, and the inside of the plasma processing chamber 10 is set to a pressure P2 (second pressure). As a result, the substrate W is subjected to a second substrate treatment. Further, in the temperature adjustment step S103 performed after the first substrate processing step S101 and before the second substrate processing step S105, the substrate W is processed with the pressure P11 (third pressure) inside the plasma processing chamber 10. The temperature may be increased from the temperature T1 to the processing temperature T2.

Furthermore, in the example shown in FIG. 3, the case where the pressure P1 is higher than the pressure P2 (P2<P1) has been described as an example, but the present invention is not limited to this. The pressure P1 may be lower than the pressure P2 (P1<P2), or the pressure P1 may be equal to the pressure P2 (P1=P2).

Furthermore, in the example shown in FIG. 3, the case where the temperature adjustment step S107 raises the temperature of the substrate W has been described as an example. That is, in the second substrate processing step S105, the substrate W is subjected to the second substrate processing at a processing temperature T2 and a pressure P2 in the chamber. Further, in the third substrate processing step S109, the substrate W is subjected to a third substrate processing at a processing temperature T3 higher than the processing temperature T2 of the second substrate processing step S105, and the pressure inside the plasma processing chamber 10 is set to P3. . Further, in the temperature adjustment step S107 performed after the second substrate processing step S105 and before the third substrate processing step S109, the substrate W is changed from the processing temperature T2 to the processing temperature while the pressure inside the plasma processing chamber 10 is set to P12. Raise the temperature to T3.

The temperature adjustment step S107 is not limited to the case where the temperature of the substrate W is increased, but may be the case where the temperature of the substrate W is decreased. That is, in the second substrate processing step S105, the substrate W is subjected to the second substrate processing at a processing temperature T2 and a pressure P2 in the chamber. Further, in the third substrate processing step S109, the substrate W is subjected to a third substrate processing at a processing temperature T3 lower than the processing temperature T2 of the second substrate processing step S105 and a pressure P3 in the plasma processing chamber 10. . Further, in the temperature adjustment step S107 performed after the second substrate processing step S105 and before the third substrate processing step S109, the substrate W is changed from the processing temperature T2 to the processing temperature while the pressure inside the plasma processing chamber 10 is set to P12. The temperature may be lowered to T3.

Further, in the example shown in FIG. 3, the case where the pressure P2 is lower than the pressure P3 (P2<P3) has been described as an example, but the present invention is not limited to this. The pressure P2 may be higher than the pressure P3 (P3<P2), or the pressure P2 may be equal to the pressure P3 (P2=P3).

The embodiments disclosed above include, for example, the following aspects.
(Additional note 1)
performing a first substrate treatment on the substrate at a temperature of the substrate at a first treatment temperature and at a chamber pressure at a first pressure;
a step of subjecting the substrate to a second substrate treatment, with the temperature of the substrate subjected to the first substrate treatment being a second treatment temperature and the chamber pressure being a second pressure;
After the step of performing the first substrate treatment and before the step of performing the second substrate treatment, a substrate support that supports the substrate so that the temperature of the substrate changes from the first treatment temperature to the second treatment temperature. a step of adjusting the temperature of the part;
The temperature adjustment step includes:
adjusting the temperature of the substrate support section while the chamber pressure is set to a third pressure higher than the first pressure and the second pressure;
Substrate processing method.
(Additional note 2)
After the step of performing the first substrate treatment and before the step of adjusting the temperature,
further comprising the step of bringing the substrate to the first processing temperature and increasing the chamber pressure from the first pressure to the third pressure;
The substrate processing method described in Supplementary Note 1.
(Additional note 3)
After the temperature adjustment step and before the second substrate treatment step,
The temperature of the substrate is set to the second processing temperature, and the chamber pressure is lowered from the third pressure to the second pressure.
The substrate processing method according to Supplementary Note 1 or Supplementary Note 2.
(Additional note 4)
the substrate is electrostatically attracted to the substrate support;
The substrate processing method according to any one of Supplementary Notes 1 to 3.
(Appendix 5)
A heat transfer gas is supplied between the substrate and a substrate support surface of the substrate support.
Substrate processing method according to appendix 4.
(Appendix 6)
The third pressure is 26.6 Pa or more,
The substrate processing method according to any one of Supplementary Notes 1 to 5.
(Appendix 7)
The temperature adjustment step includes:
supplying an inert gas into the chamber;
The substrate processing method according to any one of Supplementary notes 1 to 6.
(Appendix 8)
The temperature adjustment step includes:
supplying a processing gas supplied in the second substrate processing into the chamber;
The substrate processing method according to any one of Supplementary notes 1 to 6.
(Appendix 9)
The second treatment temperature is higher than the first treatment temperature,
The temperature adjustment step includes:
a step of increasing the temperature of the substrate from the first processing temperature to the second processing temperature,
The substrate processing method according to any one of Supplementary notes 1 to 8.
(Appendix 10)
The second treatment temperature is a temperature lower than the first treatment temperature,
The temperature adjustment step includes:
a step of lowering the temperature of the substrate from the first processing temperature to the second processing temperature,
The substrate processing method according to any one of Supplementary notes 1 to 8.
(Appendix 11)
a chamber;
a substrate support part provided in the chamber and supporting the substrate;
a gas supply unit that supplies gas into the chamber;
an evacuation system for controlling pressure within the chamber;
a temperature control module that adjusts the temperature of the substrate supported by the substrate support part;
comprising a control unit;
The control unit includes:
performing a first substrate treatment on the substrate at a temperature of the substrate at a first treatment temperature and at a chamber pressure at a first pressure;
performing a second substrate treatment on the substrate, with the temperature of the substrate subjected to the first substrate treatment set as a second treatment temperature, and the chamber pressure set as a second pressure;
After the step of performing the first substrate treatment and before the step of performing the second substrate treatment, the temperature of the substrate support section is adjusted so that the temperature of the substrate becomes from the first treatment temperature to the second treatment temperature. and is configured to be able to execute the steps of
The temperature adjustment step includes:
adjusting the temperature of the substrate support part while the chamber pressure is set to a third pressure higher than the first pressure and the second pressure;
Substrate processing equipment.
(Appendix 12)
The substrate support section includes an electrostatic chuck that electrostatically attracts the substrate.
The substrate processing apparatus according to appendix 11.
(Appendix 13)
further comprising a heat transfer gas supply unit that supplies heat transfer gas between the substrate and the substrate support surface of the substrate support unit;
The substrate processing apparatus according to appendix 12.

Note that the present invention is not limited to the configurations shown here, such as combinations of other elements with the configurations listed in the above embodiments. These points can be modified without departing from the spirit of the present invention, and can be appropriately determined depending on the application thereof.

W Substrate 1 Plasma processing equipment (substrate processing equipment)
2 Control unit 10 Plasma processing chamber (chamber)
10s Plasma processing space 11 Substrate support section 15 Heater power supply 20 Gas supply section 30 Power supply 40 Exhaust system 50 Heat transfer gas supply section 51 Gas source 52 Channel 53 Annular protrusion 54 Point-like protrusion 55 Space 1111 Electrostatic chuck 1111c Heater

Claims (13)

performing a first substrate treatment on the substrate at a temperature of the substrate at a first treatment temperature and at a chamber pressure at a first pressure;
a step of subjecting the substrate to a second substrate treatment, with the temperature of the substrate subjected to the first substrate treatment being a second treatment temperature and the chamber pressure being a second pressure;
After the step of performing the first substrate treatment and before the step of performing the second substrate treatment, a substrate support that supports the substrate so that the temperature of the substrate changes from the first treatment temperature to the second treatment temperature. a step of adjusting the temperature of the part;
The temperature adjustment step includes:
adjusting the temperature of the substrate support section while the chamber pressure is set to a third pressure higher than the first pressure and the second pressure;
Substrate processing method. After the step of performing the first substrate treatment and before the step of adjusting the temperature,
further comprising the step of bringing the substrate to the first processing temperature and increasing the chamber pressure from the first pressure to the third pressure;
The substrate processing method according to claim 1. After the temperature adjustment step and before the second substrate treatment step,
The temperature of the substrate is set to the second processing temperature, and the chamber pressure is lowered from the third pressure to the second pressure.
The substrate processing method according to claim 2. the substrate is electrostatically attracted to the substrate support;
The substrate processing method according to any one of claims 1 to 3. A heat transfer gas is supplied between the substrate and a substrate support surface of the substrate support.
The substrate processing method according to claim 4. The third pressure is 26.6 Pa or more,
The substrate processing method according to any one of claims 1 to 3. The temperature adjustment step includes:
supplying an inert gas into the chamber;
The substrate processing method according to any one of claims 1 to 3. The temperature adjustment step includes:
supplying a processing gas supplied in the second substrate processing into the chamber;
The substrate processing method according to any one of claims 1 to 3. The second treatment temperature is higher than the first treatment temperature,
The temperature adjustment step includes:
a step of increasing the temperature of the substrate from the first processing temperature to the second processing temperature,
The substrate processing method according to any one of claims 1 to 3. The second treatment temperature is a temperature lower than the first treatment temperature,
The temperature adjustment step includes:
a step of lowering the temperature of the substrate from the first processing temperature to the second processing temperature,
The substrate processing method according to any one of claims 1 to 3. a chamber;
a substrate support part provided in the chamber and supporting the substrate;
a gas supply unit that supplies gas into the chamber;
an evacuation system for controlling pressure within the chamber;
a temperature control module that adjusts the temperature of the substrate supported by the substrate support part;
comprising a control unit;
The control unit includes:
performing a first substrate treatment on the substrate at a temperature of the substrate at a first treatment temperature and at a chamber pressure at a first pressure;
a step of subjecting the substrate to a second substrate treatment, with the temperature of the substrate subjected to the first substrate treatment being a second treatment temperature and the chamber pressure being a second pressure;
After the step of performing the first substrate treatment and before the step of performing the second substrate treatment, the temperature of the substrate support section is adjusted so that the temperature of the substrate becomes from the first treatment temperature to the second treatment temperature. and is configured to be able to execute the steps of
The temperature adjustment step includes:
adjusting the temperature of the substrate support section while the chamber pressure is set to a third pressure higher than the first pressure and the second pressure;
Substrate processing equipment. The substrate support section includes an electrostatic chuck that electrostatically attracts the substrate.
The substrate processing apparatus according to claim 11. further comprising a heat transfer gas supply unit that supplies heat transfer gas between the substrate and the substrate support surface of the substrate support unit;
The substrate processing apparatus according to claim 12.

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