KR20090127015A - Organic light emitting display and manufaccturing method for the same - Google Patents

Abstract

PURPOSE: An organic electroluminescent display device and a manufacturing method thereof are provided to improve reliability and life of the device by minimizing the defect of the device. CONSTITUTION: A transistor is formed on a substrate(S101). A first electrode layer connected to a source or drain of the transistor is formed on the transistor(S102). A bank layer with an opening is formed on the first electrode layer(S103). An organic light emitting layer is formed on the first electrode layer(S104). A second electrode layer is formed on the organic light emitting layer(S105). A moisture reactive intermediate layer is formed on the second electrode layer. The intermediate layer is comprised of an oxide layer(S106).

Description

Organic Light Emitting Display and Manufacturing Method for the Same {Organic Light Emitting Display and Manufaccturing Method for the same}

The present invention relates to an organic light emitting display device and a manufacturing method thereof.

An organic light emitting display device used in an organic light emitting display device is a self-light emitting device in which a light emitting layer is formed between two electrodes positioned on a substrate.

In addition, the organic light emitting display device may include a top-emission method, a bottom-emission method, or a dual-emission method according to a direction in which light is emitted. According to the driving method, it is divided into a passive matrix type and an active matrix type.

When the scan signal, the data signal, and the power are supplied to the plurality of subpixels arranged in a matrix form, the organic light emitting display device may display an image by emitting light of the selected subpixel.

Such an organic light emitting display device may cause defects when foreign particles or the like are placed in a device during a manufacturing process. The foreign particles causing such defects are formed on the anode, organic light emitting layer, and cathode included in the organic light emitting diode to generate a leakage current and further damage or destroy some areas of the subpixel, thereby causing problems such as display defects or dark spots. May cause

Therefore, the conventional manufacturing method of the organic light emitting display device is required to prepare a manufacturing method that can cope with unexpected process defects and improve the reliability and life of the device as described above.

SUMMARY OF THE INVENTION An object of the present invention for solving the above problems of the background art is to repair or mitigate defects that may occur in a device during a manufacturing process of an organic light emitting display device, thereby minimizing the failure rate of the device, as well as reliability and lifetime of the device. To improve.

The present invention as a means for solving the above problems, forming a transistor on a substrate; Forming a first electrode layer on the transistor, the first electrode layer being connected to a source or a drain of the transistor; Forming a bank layer having an opening on the first electrode layer; Forming an organic emission layer on the first electrode layer; Forming a second electrode layer on the organic light emitting layer; And forming a water (H 2 O) reactive medium layer on the second electrode layer and forming the medium layer as an oxide layer.

In the oxide layer forming step, oxygen (O 2) may be injected into the chamber and the intermediate layer may be oxidized, or the intermediate layer may be oxidized by exposing to an atmospheric state.

The intermediate layer may be calcium (Ca), magnesium (Mg) or manganese (Mn).

The thickness of the intermediate layer may be 50 kPa to 500 kPa.

The oxide layer may be a calcium oxide film (CaO), a magnesium oxide film (MgO), or a manganese oxide film (MnO).

An oxidized region oxidized by reacting with moisture (H 2 O) may be located in at least one layer of each unit layer disposed on the transistor.

The second electrode layer may be aluminum (Al), and at least one region of the second electrode layer may be oxidized to the aluminum oxide layer (Al 2 O 3) by an oxide layer forming step.

The method may further include forming a diffusion barrier layer on the second electrode layer.

The diffusion barrier layer may be made of an alkali metal element and a halogen element.

The diffusion barrier layer may include LiF (lithium fluoride).

After the oxide layer forming step, the method may further include forming a metal layer on the oxide layer.

The metal layer can be formed of the same material as the material of the second electrode layer.

On the other hand, in another aspect, the present invention, a transistor located on the substrate; A first electrode layer on the transistor and connected to the source or drain of the transistor; A bank layer disposed on the first electrode layer and having an opening; An organic light emitting layer on the first electrode layer; A second electrode layer on the organic light emitting layer; And an oxide layer disposed on the second electrode layer.

The oxide layer may be a calcium oxide film (CaO), a magnesium oxide film (MgO), or a manganese oxide film (MnO).

An oxide region may be located in at least one layer of each unit layer disposed on the transistor.

The diffusion barrier layer may further include a diffusion barrier layer disposed between the second electrode layer and the oxide layer.

The diffusion barrier layer may be made of an alkali metal element and a halogen element.

The diffusion barrier layer may include LiF (lithium fluoride).

It may further include a metal layer located on the oxide film layer.

The metal layer may be the same material as the second electrode layer material.

The present invention has the effect of minimizing the failure rate of the device by improving or reducing the defects that may occur in the device during the manufacturing process of the organic light emitting display device, and can improve the reliability and life of the device. In addition, the present invention has the effect that can solve the problem that the leakage current occurs in the electrode of the device or the resistance increases.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 is a flow chart of a manufacturing method according to a first embodiment of the present invention, Figures 2 to 9 are views for explaining a manufacturing method according to a first embodiment of the present invention.

Referring to the manufacturing method according to the first embodiment of the present invention may be as follows.

First, as shown in FIGS. 1 and 2, a step (S101) of forming a transistor on a substrate is performed.

The substrate 110 may be selected as a material for forming an element having excellent mechanical strength or dimensional stability. As the material of the substrate 110, a glass plate, a metal plate, a ceramic plate or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, silicone resin) , Fluorine resins, and the like).

The buffer layer 111 is formed on the substrate 110. The buffer layer 111 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the substrate 110. The buffer layer 111 may use a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like.

The gate 112 is formed on the buffer layer 111. The gate 112 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of one or an alloy thereof.

In addition, the gate 112 is formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 112 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 113 is formed on the gate 112. The first insulating layer 113 may be, but is not limited to, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

The active layer 114 is formed on the first insulating layer 113. The active layer 114 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not illustrated, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer to lower the contact resistance.

The source 115a and the drain 115b are formed on the active layer 114. The source 115a and the drain 115b may be formed of a single layer or multiple layers. When the source 115a and the drain 115b are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), and gold may be used. (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof. In addition, when the source 115a and the drain 115b are multiple layers, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The second insulating layer 116a is formed on the source 115a and the drain 115b. The second insulating layer 116a may be a silicon oxide film SiOx, a silicon nitride film SiNx, or a multilayer thereof, but is not limited thereto. The second insulating layer 116a may be a passivation layer.

A third insulating film 116b is formed on the second insulating film 116a. The third insulating layer 116b may be a planarization layer for increasing flatness.

Next, as shown in FIGS. 1 and 2, a step (S102) of forming a first electrode layer connected to a source or a drain of the transistor is performed on the transistor.

The first electrode layer 117 formed on the source 115a and the drain 115b of the transistor may be an anode. The first electrode layer 117 selected as the anode may be made of indium tin oxide (ITO) or indium zinc oxide (IZO) as a transparent material, but is not limited thereto.

Next, as shown in FIGS. 1 and 2, a step S103 of forming a bank layer having an opening on the first electrode layer is illustrated.

The bank layer 120 formed on the first electrode layer 117 may have an opening for setting a light emitting area. The bank layer 120 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

Next, as shown in FIGS. 1 and 2, forming an organic emission layer on the first electrode layer is performed (S104).

The organic light emitting layer 121 formed in the opening of the bank layer 120 may be formed to emit one of red, green, and blue colors according to the sub-pixel P. FIG.

The organic light emitting layer 121 will be described in more detail as follows.

The organic emission layer 121 may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer.

The hole injection layer may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline) and NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

The hole transport layer serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N, N ' at least one selected from the group consisting of -bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made but not limited thereto.

The emission layer may include a material emitting red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer is red, CBP (carbazole biphenyl) or mCP (including host material containing 1,3-bis (carbazol-9-yl), PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium), and PtOEP (octaethylporphyrin platinum) Alternatively, the present invention may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or Perylene, but is not limited thereto.

When the light emitting layer is green, it may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). , Alq3 (tris (8-hydroxyquinolino) aluminum) may be made of a fluorescent material including, but not limited to.

When the light emitting layer is blue, the phosphor may include a host material including CBP or mCP and a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The electron transport layer serves to facilitate the transport of electrons, and may be made of one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq, but is not limited thereto. It doesn't work.

The electron injection layer serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

However, the present invention is not limited thereto, and at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be omitted.

Next, as shown in FIGS. 1 and 2, a step (S105) of forming a second electrode layer on the organic light emitting layer is performed.

The second electrode layer 122 formed on the organic emission layer 121 may be selected as a cathode. The second electrode layer 122 selected as the cathode may use a metal having a low work function such as aluminum (Al), but is not limited thereto.

In the above process, the plurality of subpixels P is positioned on the substrate 110 in a matrix form.

Next, as shown in FIGS. 1 and 2, a step of forming a water (H 2 O) reactive medium layer on the second electrode layer and forming the medium layer as an oxide layer (S107) is performed.

Here, the intermediate layer 125 formed on the second electrode layer 122 may be a material having good reactivity with moisture (H 2 O). For example, the intermediate layer 125 may be calcium (Ca), magnesium (Mg), manganese (Mn), or the like. If calcium (Ca), magnesium (Mg), manganese (Mn), or the like is formed on the second electrode layer 122, moisture or the like may be absorbed without sealing an absorbent such as a getter during sealing.

After the intermediate layer 125 is formed on the second electrode layer 122 as described above, the intermediate layer 125 is oxidized. In the oxidation process, as shown in FIG. 3, the substrate 110 is placed in the chamber 140 and oxygen (O 2) A is injected to oxidize the intermediate layer 125 located at the uppermost layer of the sub-pixel P. Can be. Alternatively, the intermediate layer 125 may be oxidized by exposing the substrate 110 to a general atmospheric state.

When the intermediate layer 125 is oxidized through the above process, the intermediate layer 125 is formed of the oxide layer 126 as shown in FIG. 4. In this case, the oxidized oxide layer 126 may be a calcium oxide layer (CaO), a magnesium oxide layer (MgO), or a manganese oxide layer (MnO).

As in the first embodiment of the present invention, the intermediate layer 125 is formed on the second electrode layer 122, and the intermediate layer 125 is oxidized to form the oxide layer 126. This is to respond to process defects such as the case where physical particles are located and to manufacture devices.

Here, the foreign particles may occur when performing a deposition process or the like in the chamber or in an unspecified state. For example, when the deposition process is performed, a series of processes of forming the first electrode layer 117, the organic emission layer 121, and the second electrode layer 122 on the transistor may be included. The foreign particles may cause leakage current between the electrode layers and further damage or destroy some regions of the subpixels to cause problems such as display defects or dark spots.

Accordingly, the process of forming the intermediate layer 125 formed on the uppermost layer as the oxide layer 126 as in the first embodiment of the present invention will be described with reference to FIG. 5. However, a case where aluminum (Al) is formed as the second electrode layer 122 and calcium (Ca) is formed as the intermediate layer 125 is used as an example, and foreign matter particles having a small size are positioned on the second electrode layer 122. Assume that the problem is solved.

First, as described above, the intermediate layer 125 is formed on the second electrode layer 122 (S1). Thereafter, the intermediate layer 125 is formed as the oxide layer 126 through an oxidation process (S1). At this time, the primary effect E1 appears.

In the primary effect (E1), the calcium (Ca) is oxidized to the calcium oxide film (CaO), and the interface between the short circuit generated by the foreign particles and the interface is insulated to recover the region where the leakage current occurs due to the short generation. repair). Thereafter, the oxide layer 126 which is oxidized to the calcium oxide layer CaO absorbs moisture and the like (S3). Thereafter, the oxide layer 126 reacts with moisture to help the aluminum (Al), which is the second electrode layer 122, to be oxidized. Then, at the same time, a part of the interface of the aluminum (Al), which is the second electrode layer 122, is oxidized together with the oxide film layer 126 and is formed of the aluminum oxide film (Al2O3) (S4). At this time, the secondary effect E2 appears.

In the secondary effect (E2), the interface located in the layer adjacent to the interface of aluminum (Al) can also be oxidized, and it is oxidized together with some regions of the layer (exposed by cracks, etc.) exposed by the foreign particles, and short. It is possible to recover the region where the leakage current is generated by the short generation by insulating the interface and the generated interface.

Here, the thickness of the oxide layer 126 oxidized by the primary effect E1 is relatively thinner than the thickness of the second electrode layer 122. If the size of the foreign particles is large, the short caused by the foreign particles may not be solved by the oxide layer 126 formed relatively thinner than the thickness of the second electrode layer 122.

Accordingly, the oxide layer 126 helps to oxidize the second electrode layer 122 as shown in the secondary effect E2 so that the oxide layer 126 can be recovered even when the size of the foreign particles is large.

Accordingly, if the water-reactive medium 125 is oxidized on the second electrode layer 122, the oxide film can be formed thicker than the case where only the second electrode layer 122 is oxidized, so that the insulation effect is improved and the physical properties are improved. The effect of repairing defects caused by particles can be improved.

Here, the thickness of the oxide film layer 126 depends on the thickness of the intermediate layer 125, the thickness of the intermediate layer 125 may be 50 kPa ~ 500 kPa. When the thickness of the intermediate layer 125 is formed to be 50 GPa or more, an insulation effect and a moisture absorption effect, which appear as the intermediate layer 125 is oxidized, may be obtained, and the oxidation of the second electrode layer 122 may be assisted. In addition, when the thickness of the intermediate layer 125 is 500 μs, the insulation effect and the moisture absorption effect can be improved, and the second electrode layer 122 can be oxidized to recover even when the size of the foreign particles is large.

Therefore, when the thickness of the intermediate layer 125 is formed to be 50 kPa to 500 kPa, since the oxidation occurs together with the second electrode layer 122, a thick oxide film can be formed to improve the insulation effect to improve the recovery effect.

Hereinafter, referring to FIGS. 6 to 9, a state diagram before and after the recovery will be described in detail in which form the defective area formed by the foreign particles is recovered using the manufacturing method according to the first embodiment of the present invention. do.

First, FIG. 6 illustrates a state in which the metallic particle 130 is formed on the first electrode layer 117. 6A illustrates a state before recovery, and the organic light emitting layer 121, the second electrode layer 122, and the intermediate layer 125 are formed as the metallic particles 130 are formed on the first electrode layer 117. The defective region D formed with this poor deposition interface is shown. Here, the defective region D indicates that a short occurs between the first electrode layer 117 and the second electrode layer 122 by the metallic particle 130.

6 (b1) shows the state after the restoration. When the same process as in the first embodiment of the present invention is performed, the intermediate layer 125 is formed of the oxide layer 126, and the second electrode layer 122 is The shot portion, which is oxidized and is in contact with the first electrode layer 117 and the second electrode layer 122 in the defective region D, is insulated 127. That is, the region in which the second electrode layer 122 located in the defect region D is oxidized with the aid of the oxide film layer 126 and insulates the region which is in contact with the periphery of the metallic particle 130 is caused by a short circuit. This is recovered.

Next, FIG. 7 illustrates a state in which a rather large organic particle 130 is formed on the first electrode layer 117. FIG. 7A illustrates a state before the recovery. As the organic particles 130 are somewhat larger than the first electrode layer 117, the organic light emitting layer 121, the second electrode layer 122, and the intermediate layer ( 125 shows a defective region D formed with a poor deposition interface. Here, the defective region D indicates that a short occurs between the first electrode layer 117 and the second electrode layer 122 due to a rather large organic particle 130.

7 (b2) shows the state after the restoration. When the same process as in the first embodiment of the present invention is performed, the intermediate layer 125 is formed of the oxide layer 126, and the second electrode layer 122 is The shot portion, which is oxidized and is in contact with the first electrode layer 117 and the second electrode layer 122 in the defective region D, is insulated 127. That is, the second electrode layer 122 positioned in the defect region D is oxidized with the aid of the oxide film layer 126, and insulation regions 127 are in contact with each other due to poor deposition caused by the foreign particle 130. The area causing the short is recovered.

Next, FIG. 8 is a state where deposition variation occurs at an interface between the layers by the particles 130 protruding from the bottom of the first electrode layer 117. FIG. 8A illustrates a state before recovery. As the particle 130 is formed under the first electrode layer 117, the first electrode layer 117, the organic emission layer 121, and the second electrode layer 122 are formed. ) And the defective region D in which the deposition variation occurs at the interface between the intermediate layer 125. Here, the defective region D indicates that a short occurs between the first electrode layer 117 and the second electrode layer 122 as the particle 130 protrudes.

8 (b3) shows the state after the restoration. When the same process as in the first embodiment of the present invention is performed, the intermediate layer 125 is formed of the oxide layer 126, and the second electrode layer 122 is The shot portion, which is oxidized and is in contact with the first electrode layer 117 and the second electrode layer 122 in the defective region D, is insulated 127. That is, the second electrode layer 122 positioned in the defect region D is oxidized with the help of the oxide layer 126, and the deposition failure occurs due to the particle 130. The area causing is recovered.

Next, FIG. 9 illustrates a state in which the organic light emitting layer 121 is damaged during the manufacturing process. 9A illustrates a state before recovery, and the organic light emitting layer 121 is formed on the first electrode layer 117 as the organic particles 130 by being cut or torn by a mask or a foreign object during deposition. Defect region D is formed in which 121, second electrode layer 122, and intermediate layer 125 have poor deposition interfaces. Here, the defective region D indicates that a short occurs between the first electrode layer 117 and the second electrode layer 122 by the organic particle 130.

9 (b4) shows the state after the restoration. When the same process as in the first embodiment of the present invention is performed, the intermediate layer 125 is formed of the oxide layer 126, and the second electrode layer 122 is The shot portion, which is oxidized and is in contact with the first electrode layer 117 and the second electrode layer 122 in the defective region D, is insulated 127. That is, the second electrode layer 122 positioned in the defect region D is oxidized with the aid of the oxide film layer 126, and insulation regions 127 are in contact with each other due to poor deposition caused by the foreign particle 130. The area causing the short is recovered.

As described above with reference to FIGS. 6 to 9, an oxidized region oxidized by reacting with water (H 2 O) may be located in at least one of the unit layers 117, 121, 122, and 126 on the transistor. . In this case, when the second electrode layer 122 is formed of aluminum (Al), at least one region (or an interface between layers of each unit) is formed by the oxide layer 126 forming step, and an insulating region oxidized by the aluminum oxide film (Al 2 O 3) is located. can do.

Meanwhile, as described above, the oxide layer 126 and the second oxide layer 126 formed through forming a water (H 2 O) reactive medium layer on the second electrode layer 122 and forming the medium layer as the oxide layer 126 (S107). The shape of the electrode layer 122 may vary depending on the material forming the second electrode layer 122 and the intermediate layer disposed below. For example, when aluminum (Al) is selected as the material of the second electrode layer 122 and calcium (Ca) is selected as the material of the intermediate layer, calcium is oxidized when the intermediate layer is oxidized to the oxide layer 126 by an oxidation process. The fast diffusion rate of the (Ca) atom may cause unwanted damage to the aluminum (Al) interface and the like.

10 and 11 are views for explaining a manufacturing method according to a second embodiment of the present invention.

In the second embodiment of the present invention, as shown in FIG. 10 to prevent the possibility of damage of the second electrode layer 122, a step of forming the diffusion barrier layer 128 on the second electrode layer 122 is further performed. Can be. Here, the thickness of the diffusion barrier layer 128 may be formed thinner than the thickness of the intermediate layer. The diffusion barrier layer 128 may be formed of an alkali metal element and a halogen element, and may include lithium fluoride (LiF) as a representative example, but is not limited thereto.

Meanwhile, in the above-described example, when lithium fluoride (LiF) is formed of the diffusion barrier layer 128 on the second electrode layer 122, the interface between the lithium fluoride (LiF) and calcium (Ca) is calcium fluoride ( CaF) prevents the atoms constituting the calcium oxide film CaO from passing through aluminum (Al). In other words, when the intermediate layer is oxidized to form the oxide layer 126, the diffusion barrier layer 128 may serve to prevent excess air from penetrating excessively into the second electrode layer 122.

The material of the diffusion barrier layer 128 may include affinity between the material constituting the second electrode layer 122, the material constituting the oxide layer 126, the oxidation process method, and the materials associated with the conditions or other oxidation processes applied during the subsequent sealing process. It can be selected according to the chamber atmosphere. In addition, since the material of the diffusion barrier layer 128 is located between the second electrode layer 122 and the oxide layer 126, it may be advantageous to include a material including conductivity when considering electrical characteristics.

As shown in FIG. 11, when the diffusion barrier layer 128 is formed on the second electrode layer 122, and the oxide layer is oxidized to form the oxide layer 126, the same as described with reference to FIGS. 6 to 9. Insulation 127 may be performed to recover the defective deposition region due to the physical particle 130.

12 and 13 are views for explaining a manufacturing method according to a third embodiment of the present invention.

In the third exemplary embodiment of the present invention, after forming a water (H 2 O) reactive medium layer on the second electrode layer 122 and forming the medium layer as the oxide layer 126, the oxide layer 126 as shown in FIG. Forming a metal layer 127 may be further performed. The metal layer 127 may be formed of the same material as the material of the second electrode layer 122, but is not limited thereto. The metal layer 127 may have a thickness of about 500 kV to about 1000 kPa, but is not limited thereto. FIG. 12 shows an example of an embodiment in which the metal layer 127 is formed of the same aluminum (Al) as the second electrode layer 122.

Meanwhile, as described above, the reason for forming the metal layer 127 on the oxide layer 126 is as follows. When the oxide layer 126 is highly reactive and is exposed to gas generated from inside or moisture penetrating weakly from the outside, the moisture is continuously absorbed so that the oxide layer 126 is positioned below the saturation state. This is because progressive dark spot defects that cause damage to the second electrode layer 122 may be caused.

Therefore, as shown in FIG. 13, when the metal layer 127 is formed on the oxide layer 126, only a dark spot recovery by reaction occurs when the initial oxide layer 126 is exposed, and no further reaction is performed thereafter. It can act as an antioxidant film.

Hereinafter, an organic light emitting display device formed by the manufacturing method of the present invention will be described.

14 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to a first embodiment of the present invention, and FIG. 15 is a schematic plan view of the organic light emitting display device.

Referring to Fig. 14, a cross-sectional view of a sub pixel P formed by the manufacturing method of the present invention is shown. The subpixel P includes the buffer layer 111, the gate 112, the first insulating layer 113, the active layer 114, the source 115a, the drain 115b, and the second insulating layer on the substrate 110. 116a, a transistor including the third insulating layer 116b, and a capacitor not shown. In addition, the subpixel P may include a first electrode layer 117, a bank layer 120, an organic emission layer 121, a second electrode layer 122, and an oxide layer 126 on the transistor.

The oxide layer 126 may be a calcium oxide layer (CaO), a magnesium oxide layer (MgO), or a manganese oxide layer (MnO). The oxide layer 126 may be an oxide layer that is highly reactive to water (H 2 O), for example, calcium (Ca), magnesium (Mg), or manganese (Mn). In addition, when the material used as the intermediate layer is oxidized to form the oxide layer 126, some regions of the second electrode layer 122 are also assisted by the oxidation of the second electrode layer 122 positioned below the oxide layer 126. Can be oxidized. Here, when the material of the second electrode layer 122 is made of aluminum (Al), the second electrode layer 122 positioned in the oxidized region may be formed of an aluminum oxide layer (Al 2 O 3).

As described above, the second electrode layer 122 oxidized with the help of the oxide layer 126 and the oxide layer 126 insulates a region where a defect is generated by foreign particles, thereby recovering a defective region. In more detail, the interface and the interface where oxygen (O 2) or atmospheric air is injected through the exposed area generated by the foreign particle to oxidize the oxide layer 126 and the second electrode layer 122 to cause a short. Is insulated.

Therefore, when the foreign particles are located on the transistor, the oxide region may be located in at least one layer of each unit layer located on the transistor.

Therefore, according to the embodiment of the present invention, as described above with reference to FIGS. 6 to 9, when (1) the metallic particles are positioned on the first electrode layer 117, (2) the organic properties are formed on the first electrode layer 117. When the particles are located, (3) when the particles are located below the first electrode layer 117 and (4) when the dark spots are generated by damage to the organic light emitting layer 121 can be applied in various ways.

Referring to FIG. 15, the sub-pixels P formed in a matrix form on the substrate 110 may form an adhesive member 180 on the substrate 110 and be sealed together with the sealing substrate 190. When the scan signal, the data signal, and the like are supplied from the driver 160 connected to the scan wiring, the data wiring, and the like formed on the substrate 110, the organic light emitting display device may display an image by emitting light of the subpixel P. FIG. do.

The shape of the oxide layer 126 and the second electrode layer 122 may be different depending on the material of the second electrode layer 122 and the intermediate layer disposed below. For example, when aluminum (Al) is selected as the material of the second electrode layer 122 and calcium (Ca) is selected as the material of the intermediate layer, the fast diffusion rate of the calcium (Ca) atoms constituting the oxide layer 126 is There is a possibility of causing unwanted damage to the aluminum (Al) interface.

16 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to a second embodiment of the present invention.

In the second embodiment of the present invention, as shown in FIG. 14, the diffusion barrier layer 128 may be further formed on the second electrode layer 122 to prevent the possibility of damage of the second electrode layer 122. The diffusion barrier layer 128 may be formed of an alkali metal element and a halogen element, and may include, but are not limited to, lithium fluoride (LiF). In the above-described example, when lithium fluoride (LiF) is formed of the diffusion barrier layer 128 on the second electrode layer 122, the interface between the lithium fluoride (LiF) and calcium (Ca) is calcium fluoride (CaF). ) To prevent the atoms constituting the calcium oxide film CaO from passing through aluminum. In other words, when the oxide layer 126 is formed, the diffusion barrier layer 128 may serve to prevent excess air from penetrating excessively into the second electrode layer 122.

The material of the diffusion barrier layer 128 may include affinity between the material constituting the second electrode layer 122, the material constituting the oxide layer 126, the oxidation process method, and the materials associated with the conditions or other oxidation processes applied during the subsequent sealing process. It can be selected according to the chamber atmosphere. In addition, since the diffusion barrier layer 128 is positioned between the second electrode layer 122 and the oxide layer 126, it may be advantageous to form a material including conductivity in consideration of electrical characteristics.

17 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to a third embodiment of the present invention.

According to the third embodiment of the present invention, as shown in FIG. 17, the metal layer 127 may be further formed on the oxide layer 126 in order to prevent the progressive dark spot failure of the oxide layer 126. The metal layer 127 may be formed of the same material as the material of the second electrode layer 122, but is not limited thereto. The metal layer 127 may have a thickness of about 500 kV to about 1000 kPa, but is not limited thereto. FIG. 17 shows an example of an embodiment in which the metal layer 127 is formed of the same aluminum (Al) as the second electrode layer 122.

Meanwhile, as described above, the reason for forming the metal layer 127 on the oxide layer 126 is as follows. When the oxide layer 126 is highly reactive and is exposed to gas generated from inside or moisture penetrating weakly from the outside, the moisture is continuously absorbed so that the oxide layer 126 is positioned below the saturation state. This is because progressive dark spot defects that cause damage to the second electrode layer 122 may be caused.

Therefore, when the metal layer 127 is formed on the oxide layer 126, it may serve as an anti-oxidation layer so as to recover only the dark spot caused by the reaction when the initial oxide layer 126 is exposed and no further reaction thereafter. do.

Each embodiment of the present invention has the effect of minimizing the failure rate of the device and improving the reliability and life of the device by repairing or mitigating defects that may occur in the device during the manufacturing process of the organic light emitting display device. . In addition, the present invention has the effect of recovering the problem that dark spots occur in the light emitting region of the sub-pixel. In addition, the present invention has an effect that can solve the problem that the leakage current occurs in the electrode of the device or the resistance increases.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a flow chart of a manufacturing method according to the first embodiment of the present invention.

2 to 9 are views for explaining a manufacturing method according to a first embodiment of the present invention.

10 and 11 are views for explaining a manufacturing method according to a second embodiment of the present invention.

12 and 13 are views for explaining a manufacturing method according to a third embodiment of the present invention.

14 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to a first embodiment of the present invention.

15 is a schematic plan view of an organic light emitting display device.

16 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to a second embodiment of the present invention.

17 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to a third embodiment of the present invention.

<Explanation of symbols on main parts of the drawings>

110: substrate 112: gate

113: first insulating film 114: active layer

117: first electrode layer 120: bank layer

121: organic light emitting layer 122: second electrode layer

125: intermediate layer 126: oxide layer

128: diffusion barrier layer 130: particles

Claims (20)

Forming a transistor on the substrate; Forming a first electrode layer on the transistor, the first electrode layer being connected to a source or a drain of the transistor; Forming a bank layer having an opening on the first electrode layer; Forming an organic emission layer on the first electrode layer; Forming a second electrode layer on the organic light emitting layer; And And forming a water (H 2 O) reactive medium layer on the second electrode layer and forming the medium layer as an oxide layer. The method of claim 1, The oxide layer forming step, Inject oxygen (O 2) into the chamber and oxidize the intermediate layer, And oxidizing the intermediate layer by exposure to an atmospheric condition. The method of claim 1, The intermediate layer, A method of manufacturing an organic light emitting display device, characterized in that calcium (Ca), magnesium (Mg) or manganese (Mn). The method of claim 1, The thickness of the intermediate layer, A method of manufacturing an organic light emitting display device, characterized in that 50 ~ 500 kHz. The method of claim 1, The oxide film layer, A method of manufacturing an organic light emitting display device, characterized in that the calcium oxide film (CaO), magnesium oxide film (MgO) or manganese oxide film (MnO). The method of claim 1, At least one of the unit-specific layers located on the transistor, A method of manufacturing an organic light emitting display device, characterized in that an oxidized region is reacted with the water (H 2 O). The method of claim 1, The second electrode layer is aluminum (Al), And at least one region of the second electrode layer is oxidized to an aluminum oxide (Al 2 O 3) by the oxide layer forming step. The method of claim 1, A method of manufacturing an organic light emitting display device, the method comprising: forming a diffusion barrier layer on the second electrode layer. The method of claim 8, The diffusion barrier layer, A method of manufacturing an organic light emitting display device, comprising an alkali metal element and a halogen element. The method of claim 8, The diffusion barrier layer, A method of manufacturing an organic light emitting display device including lithium fluoride (LiF). The method of claim 1, After the oxide layer forming step, A method of manufacturing an organic light emitting display device, the method comprising: forming a metal layer on the oxide layer. The method of claim 11, The metal layer, A method of manufacturing an organic light emitting display device, characterized in that formed of the same material as the second electrode layer material. A transistor located on the substrate; A first electrode layer on the transistor and connected to a source or a drain of the transistor; A bank layer positioned on the first electrode layer and having an opening; An organic light emitting layer on the first electrode layer; A second electrode layer on the organic light emitting layer; And An organic light emitting display device comprising an oxide layer on the second electrode layer. The method of claim 13, The oxide film layer, An organic light emitting display device comprising: a calcium oxide film (CaO), a magnesium oxide film (MgO), or a manganese oxide film (MnO). The method of claim 13, At least one of the unit-specific layers located on the transistor, An organic light emitting display device, characterized in that an oxidation region is located. The method of claim 13, An organic light emitting display device further comprising a diffusion barrier layer disposed between the second electrode layer and the oxide layer. The method of claim 16, The diffusion barrier layer, An organic light emitting display device comprising an alkali metal element and a halogen element. The method of claim 16, The diffusion barrier layer, An organic light emitting display device including lithium fluoride (LiF). The method of claim 13, An organic light emitting display device further comprising a metal layer on the oxide layer. The method of claim 19, The metal layer, An organic light emitting display device, characterized in that the same material as the second electrode layer material.

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