KR20090126708A - The angle control type tilting structure of sputtering device - Google Patents

Abstract

PURPOSE: An angle adjusting type tilting structure of sputtering device is provided to shorten the sputtering time by sputtering one wafer with more than two ion guns at the same time. CONSTITUTION: A tilting apparatus(20) adjusts the angle and performs the sputtering at the same time. An integrated shutter(10) moves with the ion gun according to the tilting angle in tilting. The decoupling-type shuts off the mutual influence when the different target is used respectively. A heating table(30) is mounted to have the predetermined distance apart from the metal source target.

Description

 The angle control type tilting structure of sputtering device}

The present invention relates to an angle-type ion gun tilting structure of a sputtering device, and more particularly, to a sputtering device that can significantly improve efficiency by sputtering several pieces simultaneously using two or more ion guns.

[Patent 1] Japanese Patent Application Laid-Open No. JP2001-035861, MATSUSHITA ELECTRIC IND Filed Date: July 23, 1999, Publication Date 2001. 02. 09, Drawing 1

[Patent 2] Japanese Laid Open Patent JP2003-247065, NTT, application date 2002. 02. 20, publication date 2003. 09. 05, drawing 1

[Patent 3] Japanese Laid Open Patent Application JP1988-000465, MATSUSHITA ELECTRIC IND, filed date 1/06/986, published date 1/05/1988, drawing 1

[Document 4] Korea Patent Registration KR0624767, Doosan D & D Co., Application Date 2004. 03. 22, Publication Date 2006. 09. 08, Drawing 6, Drawing 7

    When sputtering using two or more ION guns, each ion gun can be tilted at the same time to increase deposition efficiency and shorten deposition time.

    By using tilting device with adjustable angle and SEPARATING SHUTTER, individual deposition and multiple simultaneous deposition are possible without any interference to the operation of each ion gun.

    Therefore, using the novel ion gun tilting device in the present invention, it is also possible to deposit at the same time using two or more ion guns (ION GUN) on one specimen (wafer) and is unnecessary. It has the advantage of shielding by using SEPARATING SHUTTER and the advantage of depositing only the desired part by adjusting the distance of heating table, thereby improving productivity and stability of particle data. It is effective to plan.

    The present invention relates to an angle adjustable ion gun tilting device of a sputtering device, and more particularly, to a sputtering device that can significantly improve efficiency by sputtering several at the same time using one or more ion guns. will be.

    1 is a view showing the structure of a conventional sputtering apparatus. As shown in FIG. 1, in the conventional sputtering apparatus, the ion gun 2 is fixed in one direction (eg, vertical direction) in the sputtering chamber 1 so that sputter deposition is performed using targets of different materials. When sputtering is performed, sputtering deposition of a sample or a specimen is performed while changing the position of the ion gun while rotating the substrate 3, so that a sputtering process is performed after one operation is completed and the next operation is impossible. Therefore, sputtering deposition using various kinds of targets takes a lot of time and the orientation of the ion gun is limited, which causes inconveniences in that the vacuum is destroyed and set again when necessary, and also causes a decrease in deposition efficiency.

    2 is a block diagram showing a sputtering apparatus according to the present invention. As shown in FIG. 2, when sputtering deposition using an ion gun equipped with two integrated shutters 10, tilting of each ion gun is possible in one direction during individual operation. It is a structure that enables sputtering deposition at various angles as well as vapor deposition. It is a multi-purpose structure that enables sputter deposition on desired materials using two ion guns simultaneously. The height of the apparatus 20 and the heating type heating table 30 is adjusted to match.

    Angle adjustable ion gun (I0N GUN) tilting structure according to an embodiment of the present invention by placing a desired sample or specimen on the substrate and making a vacuum state and then vapor deposition using an ion gun according to the present invention SEPARATING SHUTTER to prevent other specimens or samples from being deposited on the shutter and each ion gun individually, and tilting up to 45 degrees with ion gun angle adjustment. ) Includes the device.

    Specifically, the sputtering device is an ion gun for deposition and an angle adjustable tilting device 20, a separation shutter shielding the influence of each other when using different targets, and a tilting of the ion gun. Moving according to position

An integrated shutter 10 and a HEATING TABLE 30 with a distance adjustable to be mounted to a certain distance from the metal source target.

    The material of the ion gun integral shutter and separating shutter is made of a material having no magnetic such as aluminum or titanium, and the height of the heating table. Use brake type gear to avoid collision with shutter. In addition, the protractor is installed in front of the ion gun so that the correct angle can be checked.

    The sputtering deposition process is performed by an inert gas, such as ionized argon, hitting the target strongly, at which time the separated metal particles are deposited on the specimen (wafer). However, when performing such sputtering deposition, the conventional fixed ion gun method is capable of depositing in only one direction, and thus cannot be deposited in multiple directions at the same time. The new ION GUN tilting device can be used to deposit two or more ion guns on one specimen at the same time. SEPARATING SHUTTER) can be used for shielding, and it is possible to deposit only the desired part by adjusting the distance of the heating table. Therefore, high efficiency can be expected.

    Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

    Although the present invention has been shown and described with reference to the preferred embodiments as described above, it is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Diversified by

One change and modification will be possible.

 1 is a diagram of FIG. It is a figure which shows the structure of the ion gun (ION GUN) of the conventional sputtering apparatus.

Figure 2 is a view showing the angle adjustable tilting device and the integrated shutter in the present invention.

Figure 3 is a detailed view showing a separate shutter (SAPERATING SHUTTER) according to the present invention.

Claims (3)

In the structure of the sputtering apparatus for performing deposition sputtering using two or more ion guns, the tilting device is angle adjustable and tiltable for ion guns, characterized in that simultaneous sputtering is possible. (TILTING) Device SEPARATING SHUTTER structure characterized in that the integral shutter moving with the ion gun according to the tilting angle and the ion gun can be prevented from being influenced by the independent operation of the ion gun during tilting. The integrated shutter structure of claim 1, wherein the ion gun moves simultaneously with the ion gun when tilting.

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