KR20090124601A - Organic light emitting display and manufacturing method for same - Google Patents

Abstract

PURPOSE: An organic electroluminescence display device and a manufacturing method thereof are provided to prevent damage of a luminescence layer during deposition by using AZO(Aluminum-doped Zinc Oxide) as an electrode. CONSTITUTION: A transistor is formed on a substrate(S101). A first electrode connected to a source or drain electrode of the transistor is formed on the transistor(S102). A bank layer having an opening is formed on the first electrode(S103). An organic luminescence layer is formed on the first electrode(S104). By using heterogeneous target material locating within a facing targets sputtering, a second electrode as AZO is formed on the organic luminescence layer(S105). The second electrode is formed as an anode.

Description

Organic Light Emitting Display and Manufacturing Method for the Same

The present invention relates to an organic light emitting display device and a manufacturing method thereof.

An organic light emitting display device used in an organic light emitting display device is a self-light emitting device in which a light emitting layer is formed between two electrodes positioned on a substrate.

In addition, the organic light emitting display device may include a top-emission method, a bottom-emission method, or a dual-emission method according to a direction in which light is emitted. According to the driving method, it is divided into a passive matrix type and an active matrix type.

The subpixels disposed in the organic light emitting display device include a switching transistor, a driving transistor, a capacitor, an anode, an organic light emitting layer, and a cathode.

Here, the basic physical properties of the transparent conducting oxide (TCO) used as the anode is evaluated based on characteristics such as transmittance and electrical resistance. Indium tin oxide (ITO) is widely used in the case of the conventional transparent electrode material.

However, the application of the ITO to the organic light emitting display device is somewhat unreasonable. For example, in the case of ITO, a heat treatment process of 300 ° C. or more is required to obtain excellent characteristics. In the case of the top emission method, when the high temperature heat treatment is performed, a problem occurs that the characteristics of the light emitting layer positioned under the ITO are degraded during the heat treatment process.

An object of the present invention for solving the above problems of the background art is to use a AZO or IZTO as an electrode as a transparent electrode material suitable for a top emission type organic light emitting display device to prevent damage to the light emitting layer during deposition and transmittance and electrical resistance To improve the characteristics.

The present invention as a means for solving the above problems, forming a transistor on a substrate; Forming a first electrode connected to the source or drain of the transistor on the transistor; Forming a bank layer having an opening on the first electrode; Forming an organic emission layer on the first electrode; And forming a second electrode, which is AZO or IZTO, on the organic light emitting layer by using a heterogeneous target material positioned in facing target sputtering (FTS). .

The heterogeneous target material for forming AZO may be composed of AZO (ZnO + 2 wt% doped Al 2 O 3) including zinc (Zn), 98 parts by weight of zinc oxide, and 2 parts by weight of aluminum oxide.

The heterogeneous target material for forming IZTO includes indium tin oxide (90 wt% In 2 O 3 & 10 wt% SnO 2) including 90 parts by weight of indium oxide and 10 parts by weight of tin oxide, and 90 parts by weight of indium oxide and 10 parts by weight of zinc oxide. Indium zinc oxide (90wt% In2O3 & 10wt% ZnO).

The AZO may have an electrical resistance of 3-4 × 10 ⁻⁴ Pa.cm, a transmittance of 80-90%, and a work function of 4.5-4.7 eV.

The second electrode can be formed of an anode.

The method may further include forming a reflective layer between the first electrode and the transistor.

The second electrode can be formed of a cathode.

On the other hand, in another aspect, the present invention, a transistor located on the substrate; A first electrode disposed on the transistor and connected to the source or drain of the transistor; A bank layer positioned on the first electrode and having an opening; An organic light emitting layer on the first electrode; And a second electrode on the organic light emitting layer, the second electrode formed of AZO or IZTO.

AZO comprises zinc (Zn), AZO (ZnO + 2wt% doped Al2O3) comprising 98 parts by weight of zinc oxide and 2 parts by weight of aluminum oxide, and IZTO comprises 90 parts by weight of indium oxide and 10 parts by weight of tin oxide. Indium tin oxide (90 wt% In 2 O 3 & 10 wt% SnO 2) and indium zinc oxide (90 wt% In 2 O 3 & 10 wt% ZnO) including 90 parts by weight of indium oxide and 10 parts by weight of zinc oxide.

When the reflective layer is positioned between the transistor and the first electrode, the second electrode may be selected as the cathode.

The present invention has the effect of preventing damage to the light emitting layer during deposition and improving transmittance and electrical resistance properties by using AZO or IZTO as an electrode as a transparent electrode material suitable for a top emission type organic light emitting display device.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention, FIG. 2 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to an embodiment of the present invention. Is a structural diagram of an organic light emitting diode.

1 to 3, the manufacturing method according to an embodiment of the present invention is as follows.

First, a step (S101) of forming a transistor on a substrate is performed.

The substrate 110 may be selected as a material for forming an element having excellent mechanical strength or dimensional stability. As the material of the substrate 110, a glass plate, a metal plate, a ceramic plate or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, silicone resin, fluorine) Resin, etc.) is mentioned.

The buffer layer 111 may be positioned on the substrate 110. The buffer layer 111 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the substrate 110. The buffer layer 111 may use silicon oxide (SiO ₂ ), silicon nitride (SiNx), or the like.

The transistor may include a gate 112.

The gate 112 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of one or an alloy thereof.

In addition, the gate 112 is formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 112 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The transistor may include a first insulating layer 113 positioned on the gate 112. The first insulating layer 113 may be, but is not limited to, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof.

The transistor may include an active layer 114 positioned on the first insulating layer 113. The active layer 114 may include amorphous silicon or polycrystalline silicon crystallized therefrom.

Although not illustrated, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer to lower the contact resistance.

The transistor may include a source 115a and a drain 115b positioned on the active layer 114. The source 115a and the drain 115b may be formed of a single layer or multiple layers. When the source 115a and the drain 115b are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), and gold may be used. (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof.

In addition, when the source 115a and the drain 115b are multiple layers, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The transistor may include a second insulating layer 116 positioned on the source 115a and the drain 115b. The second insulating layer 116 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The second insulating layer 116 may be a passivation layer. The planarization layer 117 may be disposed on the second insulating layer 116 to increase the flatness.

Next, forming a first electrode connected to the source or the drain of the transistor on the transistor (S102).

The first electrode 119 connected to the source 115a or the drain 115b of the transistor may include a metal such as aluminum (Al), and the first electrode 119 may be selected as a cathode.

Next, a step (S103) of forming a bank layer having an opening on the first electrode is performed.

The bank layer 120 having an opening on the first electrode 119 may include an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin.

Next, forming an organic emission layer on the first electrode (S104).

The organic emission layer 121 may include an electron injection layer 121a, an electron transport layer 121b, a light emitting layer 121c, a hole transport layer 121d, and a hole injection layer 121e.

The electron injection layer 121a serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

The electron transport layer 121b serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The emission layer 121c may include a material emitting red, green, blue, and white light and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 121c is red, the host material includes CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and includes PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the light emitting layer 121c is green, the light emitting layer 121c may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, the composition may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 121c is blue, the light emitting layer 121c may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The hole transport layer 121d serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The hole injection layer 121e may play a role of smoothly injecting holes into the light emitting layer 121c, and may include CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD ( N, N-dinaphthyl-N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

The present invention is not limited to FIG. 3, and at least one of the electron injection layer 121a, the electron transport layer 121b, the hole transport layer 121d, and the hole injection layer 121e may be omitted.

Next, a step (S105) of forming a second electrode of AZO or IZTO on the organic emission layer using heterogeneous target materials located in Facing Targets Sputtering (FTS) is performed.

The second electrode 122 may be selected as an anode, and may be formed of AZO or IZTO using heterogeneous target materials positioned in facing target sputtering (FTS).

Here, the heterogeneous target material for forming AZO may be composed of AZO (ZnO + 2 wt% doped Al 2 O 3) including zinc (Zn), 98 parts by weight of zinc oxide, and 2 parts by weight of aluminum oxide.

Zinc (Zn), one of the different target materials, advantageously has a purity of 99.99%. In addition, AZO, which is one of the heterogeneous target materials, may include 98 parts by weight of zinc oxide (ZnO) and 2 parts by weight of aluminum oxide (Al 2 O 3).

Hereinafter, the electrical resistance, transmittance, and work function according to the weight of zinc oxide (ZnO) and aluminum oxide (Al 2 O 3) in the composition of AZO, which is another one of the different target materials, will be briefly described with reference to Table 1.

Weight ratio (wt%) Electrical resistance Transmittance Work function Zinc oxide Aluminum oxide 76 24 ◎ X X 87 13 ◎ △ ○ 98 2 ◎ ◎ ◎ 99 One ○ ◎ ◎

In Table 1, X is bad, (triangle | delta) is normal, (circle) is good, and (◎) means very good.

Referring to Table 1, when the weight ratio of zinc oxide (ZnO) and aluminum oxide (Al2O3) is 98 to 2 in the composition of AZO, which is one of the different target materials, good properties in terms of electrical resistance, transmittance and work function You can see that indicates.

As described above, when AZO, which is another of the different target materials, contains 98 parts by weight of zinc oxide (ZnO) and 2 parts by weight of aluminum oxide (Al 2 O 3), AZO has an electrical resistance of 3 to 4 × 10 ⁻⁴ Pa · cm, The transmittance may be 80 to 90%, and the work function may be 4.5 to 4.7 eV.

In contrast, the heterogeneous target material for forming IZTO is indium tin oxide (90 wt% In 2 O 3 & 10 wt% SnO 2) including 90 parts by weight of indium oxide and 10 parts by weight of tin oxide, 90 parts by weight of indium oxide, and 10 parts by weight of zinc oxide. It may be composed of indium zinc oxide (90wt% In2O3 & 10wt% ZnO) containing a part.

Here, indium tin oxide, which is one of the different target materials, includes 90 parts by weight of indium oxide and 10 parts by weight of tin oxide, and indium zinc oxide, which is one of the different target materials, is 90 parts by weight of indium oxide and 10 parts by weight of zinc oxide. If included, it can exhibit good properties in terms of electrical resistance, transmittance and work function.

In the organic light emitting display device having the structure as described above, an inverted organic light emitting display device in which a cathode is positioned below the anode and an anode is positioned above the light emitting direction of the light generated from the light emitting layer is emitted to the front, that is, the anode. to be.

As described above, when IZTO or AZO is used as the transparent electrode material of the inverted organic light emitting display device, the organic light emitting layer 121 positioned below the second electrode 122 during the deposition process is damaged by heat. Can be.

Here, when forming the second electrode 122 on the organic light emitting layer 121 as shown in the present invention, when the opposite target sputter is used, heterogeneous materials that are not the same material may be easily deposited on the target substrate 110. It can satisfy the transmittance and electrical resistance of the transparent electrode material.

Hereinafter, an organic light emitting display device according to another embodiment of the present invention will be described.

4 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to another exemplary embodiment of the present invention, and FIG. 5 is a structural diagram of an organic light emitting diode.

1, 4 and 5 is a manufacturing method according to another embodiment of the present invention.

First, a step (S101) of forming a transistor on a substrate is performed.

The substrate 210 may be selected to be a material for forming an element having excellent mechanical strength or dimensional stability. As the material of the substrate 210, a glass plate, a metal plate, a ceramic plate or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, silicone resin, fluorine) Resin, etc.) is mentioned.

The buffer layer 211 may be positioned on the substrate 210. The buffer layer 211 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the substrate 210. The buffer layer 211 may use silicon oxide (SiO ₂ ), silicon nitride (SiNx), or the like.

The transistor may include a gate 212.

The gate 212 is any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu). It may be made of one or an alloy thereof.

In addition, the gate 212 is in the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 212 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The transistor may include a first insulating layer 213 positioned on the gate 212. The first insulating layer 213 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The transistor may include an active layer 214 positioned on the first insulating layer 213. The active layer 214 may include amorphous silicon or polycrystalline silicon crystallized therefrom.

Although not illustrated, the active layer 214 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 214 may include an ohmic contact layer to lower the contact resistance.

The transistor may include a source 215a and a drain 215b positioned on the active layer 214. The source 215a and the drain 215b may be formed of a single layer or multiple layers. When the source 215a and the drain 215b are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), and gold may be used. (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof.

In addition, when the source 215a and the drain 215b are multiple layers, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The transistor may include a second insulating layer 216 positioned on the source 215a and the drain 215b. The second insulating layer 216 may be a silicon oxide layer SiOx, a silicon nitride layer SiNx, or a multilayer thereof, but is not limited thereto.

The second insulating layer 216 may be a passivation layer. Meanwhile, a planarization layer 217 may be disposed on the second insulating layer 216 to increase flatness.

Next, forming a reflective layer on the transistor, and forming a first electrode connected to the source or drain of the transistor (S102).

On the source 215a and the drain 215b of the transistor, a metal having high reflectance and opacity, such as aluminum (Al), silver (Ag), aluminum neodymium (AlNd), or the like, may be formed as the reflective layer 218.

On the reflective layer 218, a metal, such as indium tin oxide (ITO) or indium zinc oxide (IZO), may be formed as the first electrode 219 to be connected to the source 215a and the drain 215b of the transistor. In this case, the first electrode 219 may be selected as an anode.

Next, a step (S103) of forming a bank layer having an opening on the first electrode is performed.

The bank layer 220 having an opening on the first electrode 219 may include an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin.

Next, forming an organic emission layer on the first electrode (S104).

The organic emission layer 221 may include a hole injection layer 221a, a hole transport layer 221b, an emission layer 221c, an electron transport layer 221d, and an electron injection layer 221e.

The hole injection layer 221a may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of one or more selected from the group consisting of, but is not limited thereto.

The hole transport layer 221b serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The emission layer 221c may include a material emitting red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 221c is red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the light emitting layer 221c is green, it includes a host material including CBP or mCP, and may be made of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, the composition may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 221c is blue, the light emitting layer 221c may include a host material including CBP or mCP, and may be formed of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The electron transport layer 221d serves to facilitate electron transport, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The electron injection layer 221e serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

Here, the present invention is not limited to FIG. 5, and at least one of the hole injection layer 121a, the hole transport layer 121b, the light emitting layer 121c, the electron transport layer 121d, and the electron injection layer 121e may be omitted. have.

Next, forming a second electrode of AZO or IZTO on the organic light emitting layer (S105).

The second electrode 222 may be selected as an anode, and may be formed of AZO or IZTO using heterogeneous target materials positioned in facing target sputtering (FTS).

Here, the heterogeneous target material for forming AZO may be composed of AZO (ZnO + 2 wt% doped Al 2 O 3) including zinc (Zn), 98 parts by weight of zinc oxide, and 2 parts by weight of aluminum oxide.

Zinc (Zn), one of the different target materials, advantageously has a purity of 99.99%. In addition, AZO, which is one of the heterogeneous target materials, may include 98 parts by weight of zinc oxide (ZnO) and 2 parts by weight of aluminum oxide (Al 2 O 3).

Hereinafter, the electrical resistance, transmittance and work function according to the weight of zinc oxide (ZnO) and aluminum oxide (Al 2 O 3) in the composition of AZO, which is another one of the different target materials, will be briefly described with reference to Table 2.

Weight ratio (wt%) Electrical resistance Transmittance Work function Zinc oxide Aluminum oxide 76 24 ◎ X X 87 13 ◎ △ ○ 98 2 ◎ ◎ ◎ 99 One ○ ◎ ◎

In Table 2, X is bad, (triangle | delta) is normal, (circle) is good, and (◎) means very good.

Referring to Table 2, when the weight ratio of zinc oxide (ZnO) and aluminum oxide (Al2O3) is 98 to 2 in the composition of AZO, which is one of the different target materials, good properties in terms of electrical resistance, transmittance and work function You can see that indicates.

As described above, when AZO, which is another of the different target materials, contains 98 parts by weight of zinc oxide (ZnO) and 2 parts by weight of aluminum oxide (Al 2 O 3), AZO has an electrical resistance of 3 to 4 × 10 ⁻⁴ Pa · cm, The transmittance may be 80 to 90%, and the work function may be 4.5 to 4.7 eV.

In contrast, the heterogeneous target material for forming IZTO is indium tin oxide (90 wt% In 2 O 3 & 10 wt% SnO 2) including 90 parts by weight of indium oxide and 10 parts by weight of tin oxide, 90 parts by weight of indium oxide, and 10 parts by weight of zinc oxide. It may be composed of indium zinc oxide (90wt% In2O3 & 10wt% ZnO) containing a part.

Here, indium tin oxide, which is one of the different target materials, includes 90 parts by weight of indium oxide and 10 parts by weight of tin oxide, and indium zinc oxide, which is one of the different target materials, is 90 parts by weight of indium oxide and 10 parts by weight of zinc oxide. If included, it can exhibit good properties in terms of electrical resistance, transmittance and work function.

The organic light emitting display device having the above structure is a normal organic light emitting display device in which an anode is located at the bottom, a cathode is located at the top, and the light emission direction of the light generated from the light emitting layer is emitted to the entire surface, that is, the cathode. .

As described above, when IZTO or AZO is used as the transparent electrode material of the normal type organic light emitting display device, the organic light emitting layer 221 disposed under the second electrode 222 during the deposition process may be damaged by heat. have.

Here, when the second electrode 222 is formed on the organic light emitting layer 221 as in the present invention, when the opposite target sputter is used, heterogeneous materials other than the same material may be easily deposited on the target substrate 210. It can satisfy the transmittance and electrical resistance of the transparent electrode material.

Embodiments of the present invention have the effect of preventing damage to the light emitting layer during deposition and improving transmittance and electrical resistance characteristics by using AZO or IZTO as an electrode as a transparent electrode material suitable for a top emission type organic light emitting display device.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

2 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to an embodiment of the present invention.

3 is a structural diagram of an organic light emitting diode.

4 is a partial cross-sectional view of an organic light emitting display device formed by a manufacturing method according to another embodiment of the present invention.

5 is a structural diagram of an organic light emitting diode.

<Explanation of symbols on main parts of the drawings>

110, 210: substrate 112, 212: gate

113, 213: first insulating film 116, 216: second insulating film

119 and 219: first electrode 120 and 220: bank layer

121 and 221: organic light emitting layer 122 and 222: second electrode

Claims (10)

Forming a transistor on the substrate; Forming a first electrode connected to the source or the drain of the transistor on the transistor; Forming a bank layer having an opening on the first electrode; Forming an organic emission layer on the first electrode; And A method of manufacturing an organic light emitting display device, the method comprising: forming a second electrode of AZO or IZTO on the organic light emitting layer by using a heterogeneous target material located in facing target sputtering (FTS). The method of claim 1, The heterogeneous target material for forming the AZO, A method of manufacturing an organic light emitting display device, comprising: AZO (ZnO + 2 wt% doped Al 2 O 3) comprising zinc (Zn), 98 parts by weight of zinc oxide, and 2 parts by weight of aluminum oxide. The method of claim 2, The heterogeneous target material for forming the IZTO, Indium tin oxide containing 90 parts by weight of indium oxide and 10 parts by weight of tin oxide (90 wt% In 2 O 3 & 10 wt% SnO 2) and indium zinc oxide containing 90 parts by weight of indium oxide and 10 parts by weight of zinc oxide (90 wt% In 2 O 3 & 10 wt% ZnO Method for manufacturing an organic light emitting display device, characterized in that consisting of. The method of claim 2, AZO is A method of manufacturing an organic light emitting display device, characterized in that the electrical resistance is 3-4 × 10 ⁻⁴ Pa.cm, the transmittance is 80-90%, and the work function is 4.5-4.7 eV. The method of claim 1, The second electrode, A method of manufacturing an organic light emitting display device, characterized in that formed as an anode. The method of claim 1, Between the first electrode and the transistor, A method of manufacturing an organic light emitting display device further comprising forming a reflective layer. The method of claim 6, The second electrode, A method of manufacturing an organic light emitting display device, characterized in that formed by a cathode. A transistor located on the substrate; A first electrode on the transistor and connected to a source or a drain of the transistor; A bank layer on the first electrode and having an opening; An organic light emitting layer on the first electrode; And An organic light emitting display device comprising: a second electrode on the organic light emitting layer and formed of AZO or IZTO. The method of claim 8, The AZO, Zinc (Zn), AZO (ZnO + 2wt% doped Al 2 O 3) comprising 98 parts by weight of zinc oxide and 2 parts by weight of aluminum oxide, The IZTO, Indium tin oxide containing 90 parts by weight of indium oxide and 10 parts by weight of tin oxide (90 wt% An indium zinc oxide (90 wt% In 2 O 3 & 10 wt% ZnO) comprising In 2 O 3 & 10 wt% SnO 2), 90 parts by weight of indium oxide and 10 parts by weight of zinc oxide. The method of claim 8, When the reflective layer is located between the transistor and the first electrode, And the second electrode is selected as a cathode.

Images