KR20090117119A - Semiconductor integrated circuit - Google Patents

Abstract

PURPOSE: A semiconductor integrated circuit capable of increasing driving capability of word line is provided to improve the performance capability of the semiconductor IC by improving word line driving capability. CONSTITUTION: A semiconductor integrated circuit capable of increasing driving capability of word line includes a first word line, a second word lines and a plurality of contacts. A plurality of contacts is connected with the first word line by second word line. A plurality of word lines is connected with each cell block. The cell block includes the first cell mats and the second cell mats.

Description

Semiconductor Integrated Circuits

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor integrated circuits, and more particularly, to semiconductor integrated circuits capable of increasing word line driving capability.

1 is a circuit diagram and a structural diagram of a semiconductor integrated circuit according to the prior art.

As shown in the upper side of FIG. 1, a semiconductor integrated circuit according to the related art includes a plurality of cell blocks 10-1 to 10-N.

Each of the plurality of cell blocks 10-1 to 10-N includes two cell mats 11-1/12-1 to 11 -N / 12 -N. The cell mat 11-1 includes a plurality of cell transistors and a plurality of capacitors.

A plurality of second word lines SWL are connected to a first word line MWL.

The plurality of second word lines SWL are connected to each of the plurality of cell blocks 10-1 to 10-N.

As shown in the lower side of FIG. 1, the plurality of second word lines SWL are connected to the first word line MWL and the contact H1, respectively.

The second word line SWL is disposed over two cell mats.

The contact H1 connects the first word line MWL and the second word line SWL between two cell mats (eg, 11-1 and 12-1).

According to the related art, when the resistance of the first word line MWL is small, the plurality of second word lines SWL may be sufficiently driven by the contact H1. However, when the number or size of cell mats is increased, Since the loading on the first word line MWL is increased, the resistance of the word line is increased.

For example, when the number or size of cell mats is increased in the direction of the second word line SWL, the resistance of the second word line SWL increases by that amount. Alternatively, as the degree of integration increases, the resistance of the second word line SWL is reduced in order to reduce the size of the chip. Increasing the resistance of the word line degrades the operation performance of the semiconductor integrated circuit. Therefore, in order to solve this problem, the word line driving capability must be increased, and in order to increase the word line driving capability, the size of the word line driver must be increased. In this case, the circuit area is greatly increased.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and an object thereof is to provide a semiconductor integrated circuit capable of improving word line driving performance.

A semiconductor integrated circuit of the present invention comprises a first word line; A plurality of second word lines; And a plurality of contacts connecting each of the plurality of second word lines to the first word line.

A semiconductor integrated circuit of the present invention comprises a first word line; A plurality of second word lines; A plurality of cell blocks connected to each of the plurality of second word lines; And a plurality of contacts connecting each of the plurality of second word lines and the first word line at at least two points including edge points of each of the plurality of cell blocks.

A semiconductor integrated circuit according to the present invention includes a main word line; Sub word line; A cell block connected to the sub word line; And a plurality of contacts connecting the sub word line and the main word line at a plurality of points including edge points of the cell block.

The semiconductor integrated circuit according to the present invention has an effect of improving the operating performance of the semiconductor integrated circuit by improving the word line driving characteristics.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

2 is a circuit diagram and a structural diagram of a semiconductor integrated circuit according to the present invention.

As shown in the upper side of FIG. 2, the semiconductor integrated circuit according to the present invention includes a first word line MWL, a plurality of second word lines SWL, a first contact HE1, a second contact H1, and A plurality of cell blocks 10-1 and 10 -N are provided. Each cell block (eg, 10-1) includes a first cell mat 11-1 and a second cell mat 12-1.

The plurality of second word lines SWL are connected to the first word line MWL by a plurality of first contacts HE1 and second contacts H1, respectively.

Each cell block 10-1 and 10 -N may be configured similarly to FIG. 1.

As shown in the lower side of FIG. 2, the second word is formed by the first contact HE1 formed at both sides of the second word line SWL and the second contact H1 formed at the center of the second word line SWL. The line SWL is connected to the first word line MWL.

The plurality of first contacts HE1 connect the first word line MWL and the second word line SWL at both edges of a cell block (eg, 10-1).

The second contact H1 is between the first word line MWL and the second word line SWL between two cell mats 11-1 and 12-1 in the cell block 10-1. Connect

The first contact HE1 and the second contact H1 are formed perpendicular to each other. The first contacts HE1 on both sides of the second contact H1 are formed in the vertical direction.

In the semiconductor integrated circuit according to the present invention, three contacts are formed per second word line SWL, that is, the first word line MWL and the second word line SWL are formed at the center and both edges of the cell block. A contact is formed. Therefore, the present invention can reduce the contact resistance to one third compared to the prior art in which one contact is formed for each cell block. Accordingly, the overall resistance of the word line can be greatly reduced.

3 is a waveform diagram showing a simulation result of the word line voltage of the present invention and the prior art. As shown in FIG. 3, it can be seen that the present invention can raise the word line voltage V_WL to a predetermined level more quickly than the prior art OLD.

As such, the present invention can increase the word line driving capability by reducing the resistance of the word line. Therefore, since the present invention has sufficient wordline driving capability compared to the related art, the number of cell mats or the size of the cell mats may be further increased.

As such, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without changing the technical spirit or essential features thereof.

Therefore, the above-described embodiments are to be understood as illustrative in all respects and not as restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 is a circuit diagram and a structural diagram of a semiconductor integrated circuit according to the prior art,

2 is a circuit diagram and a structural diagram of a semiconductor integrated circuit according to the present invention;

3 is a waveform diagram showing a simulation result of the word line voltage of the present invention and the prior art.

<Description of the symbols for the main parts of the drawings>

10-1 to 10-N: Cell Block 11-1 to 11-N: Cell Mat

12-1 to 12-N: Cell mat HE1: First contact

H1: 2nd contact

Claims (8)

A first word line; A plurality of second word lines; And And a plurality of contacts connected to the first word line for each second word line. The method of claim 1, The plurality of second word lines Each of which is connected to a cell block, the cell block having a first cell mat and a second cell mat. The method of claim 2, The plurality of contacts And first and second contacts connecting the first word line and the second word line at both edges of the cell block. The method of claim 3, wherein The plurality of contacts And a third contact connecting the first word line and the second word line at a point between the first cell mat and the second cell mat. A first word line; A plurality of second word lines; A plurality of cell blocks connected to each of the plurality of second word lines; And And a plurality of contacts connecting each of the plurality of second word lines and the first word line at at least two points including edge points of each of the plurality of cell blocks. The method of claim 5, wherein The cell block includes a first cell mat and a second cell mat, and the plurality of contacts First and second contacts connecting the first and second wordlines at both edges of the cell block, and the first wordline at a point between the first and second cell mats; And a third contact connecting the second word line with the second word line. Main wordline; Sub word line; A cell block connected to the sub word line; And And a plurality of contacts connecting the sub word line and the main word line at a plurality of points including edge points of the cell block. The method of claim 7, wherein The cell block includes a first cell mat and a second cell mat, and the plurality of contacts First and second contacts connecting the main word line and the sub word line at both edges of the cell block, and the main word line and the sub at a point between the first cell mat and the second cell mat. And a third contact connecting the word line.

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