KR20090111288A - Method for producing solid-state imaging device and electronic device - Google Patents

Abstract

PURPOSE: A manufacturing method of a solid state image pickup device and an electronic device are provided to improve the dark current characteristic. CONSTITUTION: A manufacturing method of a solid state image pickup device is as follows. A transfer electrode(3) is formed in order that an optical receiving sensor(4) is exposed on the substrate which has the optical receiving sensor through the gate insulating layer. A flat insulating layer is formed on the substrate by coating the transfer electrodes formed on the substrate. Openings are formed in the flat insulating layer in order that the desired location of angular transmission electrodes is exposed. A wiring(6) material film is formed to fill up the openings. The resist film is formed on the wiring base material film.

Description

METHODS FOR PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a solid state imaging device, and more particularly, to a solid state imaging device in the form of a CCD (Charge Coupled Device) and a method of manufacturing an electronic device using the same.

The CCD solid-state imaging device used for an area sensor, a digital still camera, or the like has a plurality of charge transfer electrodes for transferring signal charges from the light receiving sensor unit. The plurality of charge transfer electrodes are arranged adjacent to each other on the charge transfer path formed on the semiconductor substrate and sequentially driven.

In order to realize large screen and high-speed transfer of a solid state imaging device, reduction in resistance of the charge transfer electrode is required. At the same time, in order for light to enter the light receiving sensor portion efficiently, the charge transfer electrode is preferably as low as possible and its wiring width is narrow. The lower the charge transfer electrode, the light incident from the wide angle enters the light receiving sensor portion without being blocked by the charge transfer electrode. Further, when the width of the charge transfer electrode is narrow, the opening area of the light receiving sensor portion can be further widened, so that more light can be incident on the light receiving sensor portion.

In order to suppress the light blocking by the wiring at all and to increase the amount of light incident on the light receiving sensor unit, Japanese Unexamined Patent Publication No. 2006-41369 uses a connection of a low resistance material between charge transfer electrodes. It is proposed to wire by wiring.

Referring to Figs. 19 to 22G, a solid state imaging device and a manufacturing method thereof according to the prior art will be described.

19 is a plan view of the principal part of the pixel portion of the solid state imaging device 101 in the conventional example. In the solid state imaging device 101 according to the prior art, as shown in Fig. 19, a plurality of light receiving sensor portions 104 each made of photodiodes are arranged in the horizontal direction and the vertical direction. And the transmission channel 102 adjacent to the light receiving sensor part 104 in a horizontal direction and extending in a vertical direction is arrange | positioned. The transmission channel 102 extends between the light receiving sensor portions 104 arranged in the horizontal direction. The transfer channel 102 produces a potential distribution that transfers the signal charge in the vertical direction.

On the transmission channel 102 extending in the vertical direction, the transmission electrode 103 is arranged. The transfer electrode 103 is divided into a first transfer electrode 103a and a second transfer electrode 103b in terms of an arrangement shape. In this conventional example, the single-layer transfer electrode structure in which the first transfer electrode 103a and the second transfer electrode 103b are formed on the same layer is adopted. The transfer electrode 103 is made of polysilicon, for example.

The first transfer electrode 103a and the second transfer electrode 103b described above are repeatedly arranged alternately in the vertical direction on the transfer channel 102. The transfer electrode 103 and the transfer channel 102 constitute a vertically arranged vertical transfer unit for each column of the light receiving sensor units 104 arranged in the vertical direction.

In addition, the second transfer electrode 103b has a floating island shape on the transmission channel 102, that is, a shape separated without being connected in a horizontal direction. The second transfer electrode 103b is disposed adjacent to the light receiving sensor unit 104. And the contact part 116 connected with the connection wiring 106 formed in the upper layer is formed in the 1st transfer electrode 103a and the 2nd transfer electrode 103b.

On the first transfer electrode 103a, two connection wirings 106 extending in the horizontal direction are disposed with an insulating film interposed therebetween. The two connection wirings 106 constitute a shunt wiring, and are divided into the connection wiring 106a and the connection wiring 106b according to the place where they are connected. For example, the connection wiring 106a is connected to the first transfer electrode 103a and the contact portion 116 formed in the opening 105 on the transfer channel 102. The connection wiring 106b is connected to the second transfer electrode 103b and the contact portion 116 on the transfer channel 102.

In the solid-state imaging device 101 having the above configuration, the connection wiring 106a is connected to the first transfer electrode 103a and the second transfer electrode 103b which are alternately repeatedly arranged in the vertical direction on the transfer channel 102. Through this, four phases of transfer pulses φV1, φV2, φV3, and φV4 having different phases are supplied along the vertical direction. The voltages of the transfer pulses φV1 to φV4 are, for example, -7V to 0V. In addition, in addition to the transfer pulses φV1 and φV3, the signal charges accumulated in the light receiving sensor unit 104 via the connection wiring 106b are provided to the floating island-shaped second transfer electrodes 103b adjacent to the light receiving sensor unit 104. Is supplied with a read pulse [phi] R for transmitting to the transmission channel 102. The voltage of read pulse phi R is + 12V-+ 15V, for example.

Referring to Figs. 20A to 20D and Figs. 21E to 21G, a manufacturing method of the solid state imaging device 101 of the prior art will be described. The cross-sectional structure shown to FIG. 20A-20D and 21E-21G is a cross-sectional structure along the line a-a of FIG.

First, as shown in FIG. 20A, a polysilicon is formed on the semiconductor substrate 107 having the transfer channel 102 formed therein through a gate insulating film 108 by thermal oxidation or chemical vapor deposition (CVD). The transfer electrode 103 is formed. Then, for example, the silicon nitride film 110 and the silicon oxide film 111 are formed by the CVD method so as to cover the transfer electrode 103. Next, the opening 112 is formed so as to expose a part of the transfer electrode 103 on the transfer channel 102 by removing the silicon nitride film 110 and the silicon oxide film 111 at the position to be the connecting portion.

Next, as shown in Fig. 20B, after forming a barrier metal film 118 made of a titanium film and a titanium nitride film by sputtering or CVD, a tungsten film 113 is formed. The tungsten film 113 is used to form the connection wiring 106 in a later step. At this time, since the tungsten film 113 is formed along the shape of the transfer electrode 103 made of polysilicon, the tungsten film 113 has a step on the surface thereof.

Next, as shown in FIG. 20C, a resist film 114 for forming the connection wiring 106 is applied to the surface of the tungsten film 113. After that, as shown in FIG. 20D, by exposing and developing the resist film 114, only the portion of the resist film 114 corresponding to the formation portion of the connection wiring 106 remains. At this time, the thickness of the resist film 114 formed on the tungsten film 113 is not constant due to the step of the tungsten film 113. Then, at the time of exposing the resist film 114, since uneven light is reflected at the stepped portion of the tungsten film 113 below, even if the exposure amount is the same, the wiring width Wa, Wb of the resist film 114 to be developed is developed. Is not constant.

As shown in FIG. 21E, the connection wiring 106 is formed using the resist film 114 as a mask. However, since patterning is formed using the resist film 114 whose wiring width Wa and Wb are not constant, the wiring width Wc and Wd of the connection wiring 106 are also not constant.

In the manufacturing process according to the prior art, due to the step formed on the sidewall of the transfer electrode 103, the wiring material film made of the barrier metal film 118 or the tungsten film 113 is formed thicker than the other parts. do. Therefore, when the barrier metal film 118 and the tungsten film 113 are etched to form the connection wiring 106, as shown in FIG. 21E, the residual film 118a is formed on the sidewall portion of the connection wiring 106. Will remain. If overetching is performed to remove the remaining residual film 118a, the exposed silicon oxide film 111 may be reduced, and the semiconductor substrate 107 may be exposed.

In the solid-state imaging device 101 according to this conventional example, two connection wirings 106a and 106b are connected to the first transfer electrode 103a and the second transfer electrode 103b on the second transfer electrode 103b. ) Is configured. 22 is a cross sectional view taken along the line b-b of the solid state imaging device of FIG. Thus, when forming two connection wirings 106a and 106b on the first transfer electrode 103b, it is necessary to form the respective connection wirings 106a and 106b relatively thinly. Therefore, if the thickness of the resist film 114 is uneven due to the step, there is a possibility that the width of the connection wiring 106 becomes thinner by design or the distance between adjacent connection wiring 106 becomes too narrow. Thus, as shown in FIG. 22, for example, the film constituting the connection wiring 106 remains unetched and may cause short.

After the step shown in Fig. 21E, an insulating film 117 made of silicon oxide is formed as shown in Fig. 21F. 21G, the light shielding film 119 is formed and the light shielding film 119 and the insulating film 117 of the part corresponding to the light receiving sensor part 104 are removed.

In the solid-state imaging device 101 formed in this way, since the wiring width of the connection wiring 106 is not constant, the opening of the light shielding film 119 and the width of the incident path of light are not constant. The amount of incident light incident on the light receiving sensor unit 104 then fluctuates, which appears as a deviation of the sensitivity and smear amount on the screen.

In view of the above, the present invention provides a highly reliable solid-state imaging device in which fine connection wirings can be formed on a transfer electrode, have good smear characteristics, good white blemish and dark current characteristics. It is an object to provide a method.

The manufacturing method of the solid-state imaging device which concerns on one Embodiment of this invention has the following process. The method has a step of forming a transfer electrode on a substrate having a plurality of light receiving sensor portions so that the light receiving sensor portions are exposed through the gate insulating film. The method further includes a step of forming a flat insulating film on the substrate by coating the transfer electrode on the substrate on which the transfer electrode is formed. The method further includes forming an opening in the flat insulating film so that a desired position of the transfer electrode is exposed. The method further includes forming a wiring material film so as to fill the opening. The method further includes a step of forming a resist film on the wiring material film. The said method further has a process of exposing and developing a resist film so that only the resist film of a desired position which covers an opening part may remain. The said method further has a process of forming the connection wiring connected to a transfer electrode by an opening part by patterning a wiring material film | membrane using the exposed and developed resist film.

The opening is a contact portion which contacts the transfer electrode and the connection wiring by filling the wiring material film.

In the method for manufacturing a solid-state imaging device according to the embodiment of the present invention, the insulating film formed by covering the transfer electrode can be flattened without the influence of the step difference of the transfer electrode. Thereby, the opening part formed in the next process can be formed with high precision. In addition, since the insulating film is planarized without being influenced by the step difference of the transfer electrode, the wiring material film can also be patterned with high accuracy, so that desired connection wiring can be formed with high accuracy. Moreover, the dispersion | variation in the opening area of a light receiving sensor part can be reduced.

According to the method of manufacturing the solid-state imaging device according to the embodiment of the present invention, since the openings and the connection wirings can be formed with high accuracy, fine connection wirings can be formed, and the variation in the openings is also reduced. Thereby, a reliable solid-state imaging device having good smear characteristics, good white blemish and dark current characteristics can be obtained.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described with reference to drawings.

1A and 1B are planar configurations of the main part of the solid state imaging device formed by the manufacturing method of the solid state imaging device (CCD type solid state imaging device) 1 according to the first embodiment of the present invention. FIG. 1A shows the transfer electrode 3 made of a single layer of polysilicon, and FIG. 1B shows the transfer electrode 3 and the connection wiring connected to the transfer electrode 3 by the contact portion 5 through the insulating film ( 6) is shown.

As shown in Fig. 1A, in the solid state imaging device 1 of this embodiment, a plurality of light receiving sensor portions 4 made of photodiodes are arranged in a horizontal direction and a vertical direction in a semiconductor substrate (not shown). A transmission channel 2 adjacent to the light receiving sensor unit 4 in the horizontal direction and extending in the vertical direction is formed in the semiconductor substrate. The transmission channel 2 extends between the light receiving sensor portions 4 arranged in the horizontal direction and generates a potential distribution for transferring the signal charge in the vertical direction.

On the semiconductor substrate on which the transfer channel 2 extending in the vertical direction is formed, the transfer electrode 3 is arranged with an insulating film interposed therebetween. The transfer electrode 3 is divided into the 1st transfer electrode 3a and the 2nd transfer electrode 3b from the side of the arrangement shape. In this example, the single transfer electrode structure in which the first transfer electrode 3a and the second transfer electrode 3b are formed on the same layer is adopted. In the following description, when referring to the transfer electrode 3, it is assumed that the first transfer electrode 3a and the second transfer electrode 3b are included.

In addition, the above-mentioned first transfer electrode 3a and second transfer electrode 3b are repeatedly arranged alternately in the vertical direction on the transfer channel 2. The transfer electrode 3 and the transfer channel 2 constitute a vertically arranged vertical transfer unit (not shown) for each column of the light receiving sensor units 4 arranged in the vertical direction.

In addition, the second transfer electrode 3b has a floating island shape on the transmission channel 2, that is, a shape separated without being connected in the horizontal direction. The second transfer electrode 3b is disposed adjacent to the light receiving sensor unit 4. Moreover, the 1st transfer electrode 3a and the 2nd transfer electrode 3b have the opening part 8 for forming the contact part 5 for connection with the connection wiring 6 formed on it.

As shown in FIG. 1B, two connection wirings 6 extending in the horizontal direction are disposed on the first transfer electrode 3a with an insulating film interposed therebetween. In the present embodiment, the two connection wirings 6 constitute a shunt wiring and are formed of a material of low resistance. The connection wiring 6 is divided into the connection wiring 6a and the connection wiring 6b according to the place where it is connected. For example, the connection wiring 6a is connected with the 1st transfer electrode 3a by the contact part 5 formed in the opening part 8 on the transfer channel 2. The connection wiring 6b is connected to the 2nd transfer electrode 3b by the contact part 5 formed in the opening part 8 on the transfer channel 2.

In the solid-state imaging device 1 having the above-described configuration, the first transfer electrode 3a and the second transfer electrode 3b that are repeatedly arranged in the vertical direction on the transfer channel 2 are perpendicular to the first transfer electrode 3a through the connection wiring 6. Transmitting pulses φV1, φV2, φV3, and φV4 of four phases different in phase along the direction are supplied. The voltages of the transfer pulses φV1 to φV4 are, for example, -7V to 0V. In addition to the transfer pulses φV1 and φV3, the signal charges accumulated in the light receiving sensor unit 4 through the connection wiring 6b are applied to the floating island-shaped second transfer electrodes 3b adjacent to the light receiving sensor unit 4. The read pulse phi R for transmitting to the transmission channel 2 is supplied. The voltage of read pulse phi R is + 12V-+ 15V, for example.

In the solid state image pickup device 1 having the above-described configuration, when light enters the light receiving sensor unit 4, signal charges corresponding to the amount of incident light are generated by photoelectric conversion, and are accumulated in the semiconductor substrate for a certain period of time. When the read pulse is supplied to the second transfer electrode 3b through the connection wiring 6b constituting the shunt wiring, the potential distribution of the read gate portion (not shown) is changed, and the accumulated signal charge is transferred to the transfer channel ( 2) is read.

After the signal charge is read into the transfer channel 2, the four-phase transfer pulses φ V1 to φ V4 are supplied to the transfer electrodes 3 arranged in the vertical direction through the connection wiring 6. By the four-phase transfer pulses φ V1 to φ V4, the potential distribution of the transfer channel 2 is controlled so that the signal charge is transferred in the vertical direction.

Although not shown in the figure, in the solid state imaging device 1, the signal charges are transferred in the vertical direction, then transferred in the horizontal direction by the horizontal transfer unit, and are output by being converted into a voltage corresponding to the signal charge amount by the output unit.

Next, the manufacturing method of the solid-state imaging device 1 of this embodiment shown in FIG. 1B is demonstrated using FIGS. 2A-6N. The cross-sectional structure shown to FIG. 2A-FIG. 6N is a cross-sectional structure along the line a-a of FIG. 1B.

First, as shown in FIG. 2A, the transfer electrode 3 is formed on the surface of the semiconductor substrate 7 via the gate insulating film 9 at a position where the transfer channel 2 is formed. In FIG. 2A, the cross-sectional configuration of the second transfer electrode 3b is illustrated since it is a cross-sectional configuration along the line a-a of FIG. 1B. The transfer electrode 3 is made of polysilicon, for example, and has a thickness of about 200 to 300 nm. The transfer electrode 3 is formed by, for example, depositing polysilicon on the entire surface and removing portions other than the transfer electrode 3. The top view of the transfer electrode 3 formed at this time is as showing to FIG. 1A. In this case, although the cross-sectional structure of the second transfer electrode 3b is described in FIG. 2A, as described above, since the transfer electrode 3 has a single layer electrode structure, the first transfer electrode 3a also has a second structure. In the same process as the transfer electrode 3b, it is formed in the same layer.

In addition, after the transfer electrode 3 is formed, a silicon nitride film 10 is formed, which becomes a stopper when the silicon oxide film is removed in a later step. The silicon nitride film 10 is a "other insulating film" formed of an insulating material other than silicon oxide. The silicon nitride film 10 is formed by a CVD method and is formed to a thickness of about 30 nm to 70 nm. The silicon nitride film 10 also serves as an antireflection film for increasing incident light of light onto the semiconductor substrate 7. For this reason, the "other insulating film" may be formed of materials other than silicon nitride as long as the refractive index is high and the etching selectivity with respect to the insulating film used for embedding the light receiving sensor portion 4 is secured in a later step. AlO ₂ etc. are mentioned as a material which can be used for a "other insulating film." The higher the refractive index of the "other insulating film" is, the more preferable. However, in order to obtain the effect as an antireflection film, the refractive index of the material used for the "other insulating film" is preferably 1.8 or more, which is 20% or more higher than 1.45 which is the refractive index of silicon oxide (SiO ₂ ).

Next, as shown in FIG. 2B, by forming the insulating film 11 made of silicon oxide so that the transfer electrode 3 on the semiconductor substrate 7 is covered, the portion where polysilicon has been removed in the previous step is replaced with the insulating film 11. Landfill At this time, the insulating film 11 to be embedded has a step on the surface under the influence of the unevenness of the transfer electrode 3 formed in the lower layer.

In order to remove the step, as shown in Fig. 2C, the surface of the insulating film 11 is polished by chemical mechanical polishing (CMP) to planarize the insulating film 11. In the planarization by the CMP method, since the lower silicon nitride film 10 becomes a stopper, the planarization ends when the silicon nitride film 10 on the transfer electrode 3 is exposed. Incidentally, in the present embodiment, an example in which silicon oxide is used as the material of the insulating film 11 to be embedded will be described with reference to FIG. 2B, but the etching selectivity with the silicon nitride film 10 is ensured when the insulating film is removed later. As long as it is, you may use materials other than a silicon oxide. For example, as such a material, PSG (phosphate silicate glass), BPSG (boron phosphorus silicate glass), etc. are mentioned. In the case of using a material such as PSG, BPSG, or the like as the material of the insulating film 11 to be embedded, the CMP method is not necessary because it can be flattened by heat treatment at a high temperature of about 800 degrees.

After that, the insulating film 12 made of silicon oxide is thinly formed on the entire surface again so as to cover the exposed silicon nitride film 10. As shown in FIG. 2D, the transfer electrode 3 and the connection wiring 6 The opening part 8 in which the contact part 5 which connects) is formed is formed. The opening part 8 is patterned by the lithography method, and after that, by the dry etching method, the silicon nitride film 10 and the insulating film 12 of the desired position on the transfer electrode 3 are removed, and the connection wiring 6 is connected. It is formed by exposing a portion of the transfer electrode 3 to be made.

At the time of forming the opening 8, the surface of the insulating film 11 is flattened by the process shown in FIG. 2C, so that patterning for forming the opening 8 is performed in a state where there is no step on the surface. Therefore, in the lithography method for forming the opening 8, the thickness and the shape of the resist film formed on the insulating film 12 are uniform, so that the opening 8 can be formed with high precision. Therefore, the size of the opening 8 can be ensured in-plane, and the size of the opening 8 can be prevented from becoming too small. When the contact portion 5 is formed by embedding the wiring material film in the opening 8 in a later step by performing the above step, in the contact portion 5, a poor connection with the connection wiring 6 The yield decrease does not occur. Therefore, the reliability of the connection of the transfer electrode 3 and the connection wiring 4 can be improved.

Next, as shown in FIG. 3E, the wiring material film 14 is formed so that the opening 8 is filled. In this embodiment, first, the barrier metal film 13 made of a titanium (Ti) film and a titanium nitride (TiN) film is formed, and then the wiring material film 14 made of tungsten (W) is formed. The contact portion 5 is formed by filling the wiring material film 14 in the opening 8. The wiring material film 14 becomes the connection wiring 6 in a later step. By forming a barrier metal film 13 made of a titanium film and a titanium nitride film between the connection wiring 6 made of tungsten and the transfer electrode 3 made of polysilicon, the heat treatment is 800 degrees or more in a later step. Even at a high temperature, the reaction is suppressed by the polysilicon constituting the transfer electrode 3 and the barrier metal film 13 between the connection wirings 6. As a result, stable contact resistance can be ensured. Further, since the contact resistance can be stabilized, there is an advantage that the wiring resistance can be stably lowered, and a highly reliable wiring structure can be obtained.

At this time, in the present embodiment, tungsten is used as the wiring material film 14, but the present invention is not limited thereto. For example, aluminum (Al), titanium (Ti), copper (Cu), tantalum (Ta), cobalt (Co), nitrides thereof, silicides or lamination thereof may be used.

Next, as shown in FIG. 3F, a resist film 15 is formed over the wiring material film 14. At this time, in the upper part of the light receiving sensor part 4, since the polysilicon used as the transfer electrode 3 is removed, since the flat insulating film 11 is embedded, the wiring material film 14 is also flat and formed, and The resist film 15 is also formed flat.

3G, the resist film 15 is exposed and developed so that the resist film 15 may be patterned in the part in which the connection wiring 6 is formed. In the present embodiment, since the resist film 15 is formed flat, the resist film 15 is patterned precisely at a desired position.

Using the exposed and developed resist film 15 as a mask, the unnecessary wiring material film 14 and the barrier metal film 13 are removed by the dry etching method until the insulating film 12 is exposed. Thereby, as shown in FIG. 4H, the connection wiring 6 connected to the transfer electrode 3 via the contact part 5 is formed.

In the present embodiment, as described above, since the polysilicon serving as the transfer electrode 3 is removed above the light receiving sensor unit 4, the flat insulating film 11 is embedded, so that the wiring material film 14 ) And the resist film 15 are formed flat. As a result, exposure and development of the resist film 15 can be made with high accuracy, and even when the width of the desired connection wiring 6 is minute, the connection wiring 6 can be formed with high accuracy.

In FIG. 7, the cross-sectional structure on the b-b line | wire of FIG. 1A at the time of forming the connection wiring 6 by the above process is shown. According to the present embodiment, as shown in FIG. 7, even when two connection wirings 6a and 6b are adjacent at a small interval, the patterning can be stably performed. Therefore, also in the fine wiring which shorts even if it moves a little, the connection wiring 6a, 6b which hardly fluctuates in wiring width can be formed stably.

Next, as shown in FIG. 4I, an insulating film 16 made of, for example, silicon oxide is formed so as to fill the connection wiring 6. This insulating film 16 is formed in order to ensure the breakdown voltage between the light shielding film and the connection wiring formed in a later step. The insulating film 16 is preferably formed by a high density plasma (HDP) method, so that the insulating film 16 can be easily formed in the stepped portion between the connection wiring 6 and the insulating film 12 formed in the previous step. Can be.

When the insulating film 16 is formed so as to fill the connection wiring 6, the surface of the insulating film 16 in the portion where the connection wiring 6 is formed has a stepped portion.

In order to remove the stepped portion, as shown in Fig. 4J, the surface of the insulating film 16 having the stepped portion is planarized by the CMP method.

Thereafter, a resist film 17 is applied onto the flattened insulating film 16, as shown in FIG. 5K, and the resist film 17 is applied so that the resist film 17 is pattern-formed at portions except the light receiving sensor portion 4. (17) is exposed and developed. The wiring width W2 of the resist film 17 is made larger than the wiring width W1 of the connection wiring 6a on the second transfer electrode. Furthermore, on the 1st transfer electrode 3a, it forms larger than the wiring width containing two connection wiring 6a, 6b. The wiring width W2 of the resist film 17 is formed smaller than the wiring width W3 of the transfer electrode 3. 8, the schematic planar structure of the resist film exposed and developed at this time is shown. The wiring width W2 of the resist film 17 defines the thickness of the insulating film covering the connection wiring 6 and also affects the opening area of the light receiving sensor portion 4. In this embodiment, since the resist film 17 is formed on the planarized insulating film 16, the exposure and development of the resist film 17 can be made with high precision. Thereby, the resist film 17 is formed in a desired position with high precision.

As shown in FIG. 5L, the redundant insulating films 11, 12, and 16 are removed by the dry etching method until the silicon nitride film 10 is exposed. At this time, by using the lower silicon nitride film 10 as a stopper, the insulating films 11, 12, and 16 can be removed while managing the remaining film with high accuracy. In the present embodiment, since the wiring width W2 of the resist film 17 is larger than the wiring width W1 of the connection wiring 6, the insulating film 16 formed to fill the connection wiring 6 is formed of the connection wiring 6. It is formed to cover the side and the top surface. In the previous step, since the insulating film 16 is flattened, the resist film 17 can also be formed flat, so that exposure and development can be performed with high accuracy. Thereby, minute adjustment of the wiring width W2 of the resist film 17 patterned and developed by exposure becomes possible. Therefore, the insulating film 16 formed on the side surface of the connection wiring 6 can be made thinner.

Thereafter, as shown in FIG. 5M, an insulating film 18 made of silicon oxide is formed on the entire surface so as to cover the silicon nitride film 10 exposed in the previous step. The insulating film 18 is formed to prevent the silicon nitride film 10 from being etched by the etching gas used in the next step.

Then, as shown in Fig. 6N, after forming the entire light shielding film 19 made of aluminum (Al) or tungsten (W), for example, the insulating film 18 of the portion corresponding to the light receiving sensor unit 4 and The light shielding film 19 is removed by the lithography method. 9, the schematic top view of the light shielding film 19 formed in a present Example is shown.

In the case of etching the light shielding film 19 by the lithography method, for example, chlorine gas or sulfur fluoride gas can be used as the etching gas. These gases have a high etching rate with respect to the silicon nitride film 10, but since the insulating film 18 made of silicon oxide is formed on the silicon nitride film 10 in the previous step, the silicon nitride film 10 is etched. Can be prevented. In addition, since the silicon nitride film 10 is not etched, the silicon nitride film 10 can be used as an antireflection film.

In the present embodiment, since the insulating film 16 formed on the side surface of the connection wiring 6 can be formed thinner in the processes of FIGS. 5K and 5L, between the light shielding film 19 and the semiconductor substrate 7. The distance is reduced. As a result, light incident on the transmission channel 2 through the lower portion of the light shielding film 19 can be reduced, thereby improving smear characteristics.

In addition, since the insulating film 16 formed on the side surface of the connection wiring 6 can be formed thin, the opening area of the light receiving sensor portion 4 can be widened.

Furthermore, unlike the manufacturing method of removing the polysilicon of the light receiving sensor part 4 after forming the connection wiring 6, ion is implanted into the light receiving sensor part 4 in conformity with the polysilicon shape of the light receiving sensor part 4. Even in this case, since the ion can be implanted before the connection wiring 6 is formed, there is no fear of metal contamination.

In the present embodiment, an example in which the insulating film 16 is formed and planarized by the CMP method has been described in the step after the connection wiring 6 is formed, that is, in the step shown in FIG. 4J. However, instead, a resist etch back method using a thick resist film may be used.

In this case, after the insulating film 16 is formed as shown in FIG. 10A, a thick resist film 21 is formed on the upper portion of the insulating film 16 without planarization as shown in FIG. 10B. Next, the resist is etched back under etching conditions such that the selectivity of etching between the resist film 21 and the insulating film 16 is 1: 1. By doing so, the insulating film 16 is planarized as shown in Fig. 10C. Subsequent processes are the same as the process of FIGS. 5K-6N mentioned above.

Next, the manufacturing method of the solid-state imaging device according to the second embodiment of the present invention will be described using Figs. 11A to 11D and 12E to 12G. Since the schematic planar structure of the main part of the solid-state imaging device formed in accordance with the second embodiment is the same as that in Figs. 1A and 1B, redundant description is omitted. 11A-11D and 12E-12G, the same code | symbol is attached | subjected to the part corresponding to FIGS. 2A-6N, and overlapping description is abbreviate | omitted.

In this embodiment, the contact portion and the connection wiring are formed by the dual damascene method.

First, in the present embodiment, the same steps as those in Figs. 2A to 2C in the first embodiment are performed.

Next, after the insulating film 11 is planarized as shown in FIG. 2C, the insulating film 20 is further formed as shown in FIG. 11A. The thickness of the insulating film 20 is formed to be about 5 nm to 500 nm. By removing the portion of the insulating film 20 at the desired position on the transfer electrode 3 by etching, the transfer electrode 3 is exposed, whereby the opening 8 is formed. In a later step, the wiring material film is filled in the opening 8 to form a contact portion 5 for connecting the transfer electrode 3 and the connection wiring 6.

Next, as shown in FIG. 11B, the insulating film 20 at the position where the connection wiring 6 is formed is etched to form the wiring groove 21 for the connection wiring 6. In a later step, the wiring material film 14 is embedded in the wiring groove 22 to be the connection wiring 6. Therefore, the wiring groove 22 is formed in the pattern of the connection wirings 6a and 6b shown in FIG. 1B.

At the time of forming the opening 8 and the wiring groove 22, the insulating film 11 is in a flattened state by the process shown in FIG. 2C. Therefore, the patterning for forming the opening 8 and the wiring groove 22 is performed in a state where there is no stepped portion on the surface of the insulating film 20. As a result, when the lithography method is performed to form the opening 8 and the wiring groove 22, the thickness and the shape of the resist film are constant, so that the opening 8 and the wiring groove 22 can be formed with high accuracy. Therefore, since the size of the opening part 8 and the wiring groove 22 can be made constant in surface, between the connection wirings 6a and 6b by the size of the opening part 8 and the wiring groove 22 becoming small. Bonding defect can be reduced and a yield decrease does not occur. Therefore, the reliability of the connection between the transfer electrode 3 and the connection wiring 6 can be improved.

Next, as shown in FIG. 11C, the wiring material film 14 is formed to fill the opening 8 and the wiring groove 22 with the wiring material film 14. In this embodiment, first, the barrier metal film 13 made of a titanium (Ti) film and a titanium nitride (TiN) film is formed, and then the wiring material film 14 made of tungsten (W) is formed. The contact portion 5 and the connection wiring 6 are formed by filling the opening 8 and the wiring groove 22 with the wiring material film 14. By forming a barrier metal film 13 made of a titanium film and a titanium nitride film between the connection wiring 6 and the tungsten constituting the contact portion 5 and the polysilicon constituting the transfer electrode 3, In the process, even if the heat treatment is a high temperature of 800 degrees or more, since the adhesive force between the polysilicon and tungsten is improved by the barrier metal film 13, stable contact resistance can be ensured. In addition, since the contact resistance can be stabilized, there is an advantage that the wiring resistance can be stably lowered, and a highly reliable wiring structure can be obtained.

In this embodiment, tungsten is used as the wiring material film 14, but the present invention is not limited thereto. For example, the wiring material film 14 may be made of another material, that is, aluminum (Al), titanium (Ti), copper (Cu), tantalum (Ta), cobalt (Co) or nitrides thereof, silicides, or lamination thereof. It may be formed as.

After that, as shown in FIG. 11D, the wiring material film 14 and the barrier metal film 13 are polished by the CMP method until the insulating film 20 is exposed.

By the above process, the contact part 5 and the connection wiring 6 which connect the transfer electrode 3 and the connection wiring 6 are formed.

Next, as shown in FIG. 12E, an insulating film 23 made of silicon oxide is formed to cover the connection wiring 6. At this time, since the connection wiring 6 and the insulating film 20 of the lower layer are formed flat, the insulating film 23 formed in this process is also formed flat.

Thereafter, the resist film 24 is applied onto the insulating film 23 formed flat as shown in FIG. 12F, and then the resist film 24 is exposed and developed so that a resist pattern is formed on the connection wiring 6. The wiring width W1 of the resist film 24 is formed larger than the wiring width W2 of the connection wiring 6. Furthermore, on the 1st transfer electrode, it forms larger than the wiring width containing two connection wiring 6a, 6b. The wiring width W2 of the resist film 24 is formed smaller than the wiring width W3 of the transfer electrode 3. The planar configuration of the resist film exposed and developed at this time is the same as that of the first embodiment shown in FIG.

As shown in Fig. 12G, the redundant insulating films 11, 20, and 22 are removed by the dry etching method until the silicon nitride film 10 is exposed. At this time, by using the lower silicon nitride film 10 as a stopper, the insulating films 11, 20, and 22 can be removed while managing the remaining film with high accuracy. In the present embodiment, since the wiring width W2 of the resist film 24 is larger than the wiring width W1 of the connection wiring 6, the insulating film 23 is formed so as to cover the side surface and the upper surface of the connection wiring 6. In the previous step, since the insulating film 20 and the insulating film 23 thereon are formed flat, the resist film 24 can also be formed flat, so that exposure and development can be performed with high accuracy. Thereby, fine adjustment of the wiring width of the resist pattern formed by exposure and development becomes possible. Therefore, the insulating film formed into the side surface of the connection wiring 6 can be comprised thinner.

Thereafter, a light shielding film is formed in the same steps as those in FIGS. 5M and 6N of the first embodiment, thereby completing the solid state imaging device.

Also in this embodiment, the same effects as in the first embodiment can be obtained.

Next, a manufacturing method of the solid state imaging device according to the third embodiment of the present invention will be described using FIGS. 13A to 13C, 14D and 14E. Since the solid-state imaging device formed in accordance with the third embodiment of the present invention is the same as that shown in Figs. 1A and 1B, redundant description is omitted. In addition, in this embodiment, since the same process as the process shown to FIG. 2A-FIG. 4H is performed by the same method as 1st Example, description of these processes does not overlap.

After the connection wiring 6 is formed as shown to FIG. 13A through the process in FIGS. 2A-4H, the resist film 25 is formed, and the resist film 25 is pattern-formed on the connection wiring 6 The resist film 25 is exposed and developed as much as possible. The wiring width W2 of the resist film 25 is formed larger than the wiring width W1 of the connection wiring 6a on the second transfer electrode 3b. In addition, the wiring width on the first transfer electrode 3a is made larger than the wiring width including the two connection wirings 6a and 6b. The wiring width W2 of the resist film 25 is formed smaller than the wiring width W3 of the transfer electrode 3. The planar structure of the resist film 25 exposed and developed at this time is the same as that of the resist film shown in FIG.

In addition, as shown in FIG. 13C, using the silicon nitride film 10 as a stopper, the insulating films 11 and 12 are etched until the silicon nitride film 10 is exposed, and the resist film 25 is removed. do.

Next, as shown in Fig. 14D, an insulating film 26 made of silicon oxide is formed on the entire surface.

Thereafter, as shown in FIG. 14E, after forming the light shielding film 19 made of tungsten (W) or aluminum (Al) on the entire surface, the silicon nitride film 10 of the portion corresponding to the light receiving sensor portion 4 is formed. Until the exposure, the insulating film 26 and the light shielding film 19 of the portion corresponding to the light receiving sensor portion 4 are removed by the lithography method. The planar configuration of the light shielding film 19 formed in this embodiment is the same as that of the light shielding film 19 shown in FIG. 9.

In this embodiment, the solid state imaging device 1 is formed by the above steps.

In the present embodiment, compared with the first and second embodiments, the insulating film formed around the connection wiring 6 is formed without using the lithography method, so that the number of steps can be reduced.

Also in the present embodiment, similarly to the first and second embodiments, when forming the openings 8 serving as the contact portions 5, processing can be performed in the flattened state, so that the size of the openings 8 is reduced. Does not fluctuate and fine processing is also possible. Moreover, even when the connection wiring 6 is processed, since the processing is performed in the state where the surface was flattened, the wiring width of the connection wiring 6 does not change, and it can be processed with high precision.

The manufacturing method of the solid state imaging device according to the first to third embodiments can be applied not only to the solid state imaging device shown in FIGS. 1A and 1B but also to the solid state imaging device shown in FIGS. 15A to 17B described below.

15A and 15B, an opening 8 is formed only in the second transfer electrode 3b formed in a floating island shape, and the connection wiring 6 is connected to only the second transfer electrode 3b through the contact portion 5. The imaging device 31 is shown. FIG. 15A shows only the transfer electrode 3, and FIG. 15B shows the transfer electrode 3 and the connection electrode 6. At this time, in FIG. 15A and 15B, the same code | symbol is attached | subjected to the same part as FIG. 1A and 1B, and duplication description is abbreviate | omitted.

In this embodiment, transfer pulses φV2 and φV4 are alternately supplied to the first transfer electrodes 3a alternately arranged alternately. In addition, transfer pulses φV1 and φV3 are alternately supplied to the floating island-shaped second transfer electrode 3b adjacent to the light receiving sensor unit 4 via the connection wiring 6.

In the solid state image pickup device 31, after the signal charge is read into the transfer channel 2, the transfer pulses φV2 and φV4 are supplied to the first transfer electrode 3a, and connected to the second transfer electrode 3b. Via the wiring 6, the transfer pulses φV1 and φV3 are supplied. Then, the signal charges are read in the vertical direction by the four-phase transfer pulses? V1 to? V4.

The solid-state imaging device 31 shown in FIGS. 15A and 15B can be formed using the same steps as those in the first to third embodiments. 15A and 15B, even when the contact part 5 which connects the connection wiring 6 to the 2nd transfer electrode 3b is comprised only in the floating island shape 2nd transfer electrode 3b, After the insulating film is flattened as in the first to third embodiments, the connection wiring 6 is formed, whereby the wiring width of the connection wiring 6 can be reduced.

The same effects as in the first to third embodiments can be obtained.

In the first to third embodiments, the connection wirings are made of tungsten (W), but the connection wirings may be made of polysilicon.

Next, the solid state image pickup device 41 shown in FIGS. 16A and 16B has a shape different from that of the solid state image pickup device 1 in FIG. 1. FIG. 16A shows only the transfer electrode, and FIG. 16B shows the transfer electrode and the connection wiring.

In the solid state imaging device 41, a plurality of first transfer electrodes 43a and a plurality of second transfer electrodes 43b are alternately formed in a portion except the light receiving sensor unit 4 in the vertical direction. The solid-state imaging device 41 has a single layer electrode structure in which the first transfer electrode 43a and the second transfer electrode 43b are formed on the same layer. In addition, a gap 44 is provided between the adjacent first transfer electrodes 43a and the second transfer electrodes 43b, so that the first transfer electrodes 43a and the second transfer electrodes 43b are provided. Are separated from each other.

As shown in FIG. 16A, an opening 48 is formed in the first transfer electrode 43a and the second transfer electrode 43b. And as shown in FIG. 16B, the connection wiring 46a and the connection wiring 46b respectively transmit the 1st transfer electrode 43a and the 2nd transfer through the insulating film through the contact part 45 formed in the opening part 48, respectively. It is connected to the electrode 43b. The connection wirings 46a and 46b are made of a material of low resistance, thereby constituting the shunt wiring.

Transfer pulses φV2 and φV4 are supplied to the connection wire 46a connected to the first transfer electrode 43a, and transfer pulses φV1 and φV3 are supplied to the connection wire 46b connected to the second transfer electrode 43b. By the four-phase transfer pulses φV1 to φV4, the signal charges accumulated in the light receiving sensor unit 4 are read in the vertical direction.

The solid state imaging device 41 shown in Figs. 16A and 16B can also be formed by the same steps as in the first to third embodiments. That is, after the insulating film on the transfer electrode 43 is planarized as in the first to third embodiments, the openings 48 serving as the contact portions 45 are formed to form the connection wirings 46, thereby forming the connection wirings ( 46, the wiring width can be reduced.

By applying the manufacturing methods of the first to third embodiments to the solid state imaging device 41, the same effects as those of the first to third embodiments can be obtained.

The above-described solid state imaging devices 1, 31, and 41 were four-phase solid state imaging devices, but the present invention is not limited thereto.

17A and 17B show a solid state imaging device having three transfer electrodes and six-phase driving. FIG. 17A shows only the transfer electrode of the solid state imaging device 51, and FIG. 17B shows the transfer electrode and the connection wiring of the solid state imaging device 51. FIG. 17A and 17B, the same components as those in FIGS. 1A and 1B are denoted by the same reference numerals, and redundant description thereof is omitted.

In the solid state imaging device 51 shown in FIG. 17A, the first transfer electrode 53a, the second transfer electrode 53b, and the third transfer electrode 53c are alternately repeated in the vertical direction on the transfer channel 2. Are arranged. The first transfer electrode 53a, the second transfer electrode 55b, and the third transfer electrode 55c are formed at positions other than the light receiving sensor unit 4. The solid state imaging device 51 has a single layer electrode structure in which the first transfer electrode 53a, the second transfer electrode 55b, and the third transfer electrode 55c are formed on the same layer.

The first transfer electrode 53a is connected in a horizontal direction across the light receiving sensor portions 4 arranged in the vertical direction, and the second transfer electrode 53b has a floating island shape on the transfer channel 2. That is, it has a shape separated without being connected in the horizontal direction. Similarly to the second transfer electrode 53b, the third transfer electrode 53c has a floating island shape on the transfer channel 2, that is, a shape separated without being connected in the horizontal direction. The second transfer electrode 53a and the third transfer electrode 53b formed in a floating island shape are separately formed without being connected in the horizontal direction, whereby the second transfer electrode 53a and the third transfer electrode 53b. The light receiving sensor part 4 is comprised in this part which is not formed.

As shown in Fig. 17B, openings 58 are formed in the first transfer electrode 53a, the second transfer electrode 53b, and the third transfer electrode 53c, respectively. In addition, as shown in FIG. 17B, the connection wirings 56a, 56b, and 56c are formed in the openings 58 in the first transfer electrode 53a, the second transfer electrode 53b, and the third transfer electrode 53c, respectively. It is connected via the contact part 55. Each of the first transfer electrodes has three connection wirings 56 (56a, 56b) connected to the transfer electrodes 53 (53a, 53b, 53c) through the contact portion 55 with an insulating film therebetween. , 56c, and the three connection wirings 56 are arranged side by side to extend in the horizontal direction. The connection wiring 56 becomes a shunt wiring by being comprised from the material of low resistance.

On the transfer channel 2, the first transfer electrode 53a, the second transfer electrode 53b, and the third transfer electrode 53c, which are alternately repeatedly arranged in the vertical direction, are connected in the vertical direction via the connection wiring 56. Thus, the transmission pulses φV1, φV2, φV3, φV4, φV5, and φV6 of six phases having different phases are supplied.

The solid state imaging device 51 can also be formed employing the same steps as those in the first to third embodiments. That is, after the insulating film on the transfer electrode 53 is planarized as in the first to third embodiments, the opening 58 is formed and the connection wiring 56 is formed, whereby the wiring width of the connection wiring 56 is reduced. The fine connection wiring 56 can be formed with high accuracy.

By applying the manufacturing methods of the first to third embodiments to the solid state imaging device 51, the same effects as those of the first to third embodiments can be obtained.

In the above description, the example of the solid-state imaging device having a single-layer electrode structure in which the transfer electrodes are formed on the same layer is given. However, the solid-state imaging device in which the transfer electrodes are laminated in two layers and the connection wiring is formed on the transfer electrode thus constructed is The first to third embodiments can be applied.

That is, the present invention can be applied to a method for manufacturing a solid-state imaging device having a step of forming a connection wiring connected to a transmission wiring via a contact portion.

The solid state imaging device formed by the method for manufacturing a solid state imaging device according to the present invention can be applied to, for example, an electronic device such as a camera.

18 shows the configuration of a camera manufactured by the method for manufacturing an electronic device according to an embodiment of the present invention. The camera according to the present embodiment is an example of a video camera capable of capturing still and / or moving images.

The camera according to the present embodiment includes an image sensor 10, 100, or 200, an optical system 510, a mechanical shutter device 511, and a signal processing circuit 512. The optical system 510 forms the image light (incident light) from the subject on the imaging surface of the image sensor 10, 100, or 200. As a result, the signal charges are accumulated in the image sensor 10, 100, or 200 for a certain period of time. The mechanical shutter device 511 controls the light irradiation period and the light shielding period to the image sensor 10, 100, or 200.

The signal processing circuit 512 performs various signal processing. The video signal subjected to the signal processing is stored in a storage medium such as a memory or output to a monitor. In the present embodiment, the present invention has been described as an example in which the present invention is applied to an image sensor 10, 100, or 200 in which unit pixels for detecting signal charges according to the amount of visible light as physical quantities are arranged in a matrix form. The present invention is not limited to this, and can be applied to the entire column type solid-state imaging device formed by arranging column circuits for each pixel column of the pixel array unit.

In addition, the present invention is not limited to application to a solid-state imaging device which detects a distribution of incident light quantity of visible light and captures it as an image, and is a solid-state imaging device that captures the distribution of incident amounts of infrared rays, X-rays, or particles as an image. The present invention can also be applied to other types of solid-state imaging devices such as a fingerprint detection sensor that detects a distribution of other physical quantities such as pressure and capacitance and captures an image.

Further, the present invention is not limited to a solid-state imaging device which sequentially scans each unit pixel of a pixel array unit in rows and reads pixel signals from each unit pixel, and selects an arbitrary pixel in pixel units, and selects the selected pixel from the selected pixel. The present invention can also be applied to an XY address type solid state imaging device that reads out signals in pixel units.

At this time, the solid-state imaging device may be a form formed as a single chip, or may be a modular structure having an imaging function in which both the imaging section, the signal processing section, or the optical system are packaged.

The present invention is not limited to application to a solid state imaging device, but can also be applied to an imaging device. Here, the imaging device refers to an electronic device having an imaging function such as a camera system (digital still camera, video camera, etc.) or a mobile phone. At this time, the modular structure, that is, the camera module, mounted on the electronic device may be used as an imaging device.

In imaging devices such as camera modules used in mobile devices such as video cameras, digital still cameras, mobile phones, etc., the image sensors 10, 100, or 200 are applied to the solid state imaging device of such an imaging device. A good image can be obtained.

This application includes the subject matter related to that described in Japanese Patent JP 2008-110670 filed with the Japan Patent Office on April 21, 2008, the entire contents of which are hereby incorporated by reference.

On the other hand, it will be understood by those skilled in the art that various modifications, combinations, sub-combinations and modifications may be made in accordance with the design requirements or other elements as long as they are within the scope of the appended claims or their equivalents.

Fig. 1A shows a transfer electrode of a solid state imaging device formed by the method for manufacturing a solid state imaging device according to the first embodiment of the present invention, and Fig. 1B shows the transfer electrode and connection wiring of the solid state imaging device. Drawing.

2A, 2B, 2C, and 2D are schematic process diagrams (part 1) of the manufacturing method of the solid state imaging device according to the first embodiment of the present invention.

3E, 3F and 3G are schematic process diagrams (part 2) of the manufacturing method of the solid state imaging device according to the first embodiment of the present invention.

4H, 4I, and 4J are schematic process diagrams (part 3) of the manufacturing method of the solid state imaging device according to the first embodiment of the present invention.

5K, 5L and 5M are schematic process diagrams (part 4) of the manufacturing method of the solid state imaging device according to the first embodiment of the present invention.

6 is a schematic process diagram (part 5) of the method of manufacturing the solid-state imaging device according to the first embodiment of the present invention.

Fig. 7 is a diagram showing a cross-sectional configuration along line b-b of the solid state imaging device according to the first embodiment of the present invention.

8 is a schematic plan view showing a pattern of a resist film.

9 is a schematic plan view showing a pattern of a light shielding film.

10A, 10B and 10C are flowcharts of still another example of the manufacturing method of the solid state imaging device according to the first embodiment of the present invention.

11A, 11B, 11C, and 11D are schematic process diagrams (part 1) of the manufacturing method of the solid state imaging device according to the second embodiment of the present invention.

12E, 12F and 12G are schematic process diagrams (part 2) of the manufacturing method of the solid state imaging device according to the second embodiment of the present invention.

13A, 13B, and 13C are schematic process diagrams (part 1) of the manufacturing method of the solid state imaging device according to the third embodiment of the present invention.

14D and 14E are schematic process diagrams (part 2) of the method of manufacturing the solid-state imaging device according to the third embodiment of the present invention.

15A and 15B are schematic plan views of principal parts of still another example of the solid state image pickup device formed by the first to third embodiments of the present invention.

16A and 16B are schematic plan configuration diagrams of principal parts of still another example of the solid state image pickup device formed by the first to third embodiments of the present invention.

17A and 17B are schematic plan configuration diagrams of principal parts of still another example of the solid state image pickup device formed by the first to third embodiments of the present invention.

18 is a schematic configuration diagram of a camera using a solid state imaging device formed according to an embodiment of the present invention.

Fig. 19 is a schematic plan configuration diagram of a main part of a pixel portion of a solid state imaging device in the conventional example.

20A, 20B, 20C, and 20D are schematic process diagrams (part 1) of a method for manufacturing a solid state imaging device according to a conventional example of the present invention.

21E, 21F and 21G are schematic process diagrams (part 2) of a method for manufacturing a solid state imaging device according to a conventional example of the present invention.

FIG. 22 is a cross-sectional configuration along the line b-b in FIG. 19.

Claims (10)

Forming transfer electrodes on the substrate having a plurality of light receiving sensor portions through a gate insulating film to expose the light receiving sensor portions; Forming a flat insulating film on the substrate by covering the transfer electrodes formed on the substrate; Forming openings in the flat insulating film to expose desired positions of the respective transfer electrodes; Forming a wiring material film to fill the openings; Forming a resist film on the wiring material film; Exposing and developing the resist film so as to leave only a resist film at a desired position covering the openings; And patterning the wiring material film using the exposed and developed resist film to form connection wirings connected to the transfer electrodes by the openings. Forming transfer electrodes on the substrate having a plurality of light receiving sensor portions through a gate insulating film to expose the light receiving sensor portions; Forming a flat insulating film on the substrate by covering the transfer electrodes formed on the substrate; Forming openings in the flat insulating film to expose desired positions of the respective transfer electrodes; Forming wiring grooves in the insulating film at a desired position on the transfer electrode covering the openings; Forming a wiring material film to fill the openings and the wiring grooves; And removing the wiring material film until the insulating film is exposed, thereby forming connection wirings connected to the transfer electrode by the openings. The method of claim 1, The flat insulating film is formed by forming an insulating film through another insulating film, and using the other insulating film as a stopper to planarize the insulating film by a chemical mechanical polishing (CMP) method. . The method of claim 2, The flat insulating film is formed by forming an insulating film through another insulating film, and using the other insulating film as a stopper to planarize the insulating film by a chemical mechanical polishing (CMP) method. . The method of claim 3, wherein And forming another insulating film after the step of flattening the insulating film. The method of claim 1, After the connection wirings are formed, an insulating film and a resist film are formed on the entire surface of the substrate so as to cover the connection wirings, and then the insulating film is patterned by exposing and developing the resist film to cover the connection wirings. Forming an insulating film, And a step of forming a light shielding film on portions other than the light receiving sensor portions. The method of claim 2, After the connection wirings are formed, an insulating film and a resist film are formed on the entire surface of the substrate so as to cover the connection wirings, and then the insulating film is patterned by exposing and developing the resist film to cover the connection wirings. Forming an insulating film, And a step of forming a light shielding film on portions other than the light receiving sensor portions. The method of claim 1, Forming an insulating film covering the connection wirings after forming the connection wirings; And forming a light shielding film on a portion of the insulating film except for the light receiving sensor parts. The method of claim 2, Forming an insulating film covering the connection wirings after forming the connection wirings; And forming a light shielding film on a portion of the insulating film except for the light receiving sensor parts. Forming transfer electrodes on the substrate having a plurality of light receiving sensor portions through a gate insulating film to expose the light receiving sensor portions; Forming a flat insulating film on the substrate by covering the transfer electrodes formed on the substrate; Forming openings in the flat insulating film to expose desired positions of the respective transfer electrodes; Forming a wiring material film to fill the openings; Forming a resist film on the wiring material film; Exposing and developing the resist film so as to leave only a resist film at a desired position covering the openings; And forming a connection wiring connected to the transfer electrodes by the openings by patterning the wiring material film using the exposed and developed resist film.

Images