KR20090106654A - Thin film forming method, and thin film forming apparatus - Google Patents

Abstract

A sputtering apparatus is so constituted that film qualities such as a film thickness distribution or a specific resistance can be substantially homogenized all over the surface of a treated substrate when a predetermined thin film is formed by a reactive sputtering. Between a plurality of sputter chambers (11a and 11b) in which targets (31a to 31h) of an equal number are equidistantly juxtaposed, a treated substrate (S) is transferred to positions confronting the individual targets. An electric power is thrown into the individual targets in the sputter chambers, in which the treated substrate exists, so that the individual targets are sputtered to laminate identical or different thin films on the surface of the treated substrate. At this time, the stop position of the treated substrate is so changed that the portion of the treated substrate surface to confront the region between the individual targets may shift between the mutually continuing sputter chambers.

Description

Thin film forming method and thin film forming apparatus {THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method and a thin film forming apparatus for forming a predetermined thin film or a laminated film on a surface of a processing substrate such as glass, particularly a large substrate.

As one of the thin film formation methods for forming a predetermined thin film on the surface of a processing substrate such as glass, there is a sputtering method. In this sputtering method, ions in a plasma atmosphere are formed depending on the composition of a film to be formed on the surface of the processing substrate. The target is accelerated toward a target formed in a predetermined shape and impacted, and the target atoms are scattered toward the processing substrate to form a thin film on the surface of the processing substrate. In recent years, this type of sputtering apparatus has been widely used for forming a predetermined thin film on a processing substrate having a large area, such as a glass substrate for manufacturing a flat-panel display (FPD).

To efficiently form a predetermined thin film at a constant film thickness with respect to a large-area processing substrate, the substrate is opposed to the processing substrate in a vacuum chamber, and a plurality of targets are arranged at equal intervals, and power is supplied to each target to sputtering. It is known that each target is reciprocated at a constant speed in parallel with respect to the processing substrate as a whole while forming a predetermined thin film (for example, Patent Document 1).

When a plurality of targets are placed at regular intervals, sputter particles are not emitted from the regions between the targets, so that the film thickness distribution on the surface of the processing substrate or the film quality distribution during reactive sputtering are waved (for example, the film thickness). In the case of distribution, the thick and thin portions of the film thickness are repeated at the same period). For this reason, in the above, during the sputtering, the targets are moved as a whole and the areas where sputter particles are not released are changed to improve the film thickness distribution and the film quality distribution.

In addition, in the above, in order to further increase the uniformity of the film thickness distribution and the film quality distribution, a magnet assembly provided at the rear of the target to form tunnel-shaped magnetic flux in front of each target (sputter face side), It is also proposed to change the position of the tunnel-shaped magnetic flux in which the sputter rate is increased by simultaneously reciprocating at a constant speed as a whole parallel to the target (Patent Document 1).

Patent Document 1: Japanese Patent Application Laid-Open No. 2004-346388 (see, for example, the description of claims)

However, during sputtering, the target is subjected to ion bombardment and becomes high temperature, whereby the target may be melted or cracked. Therefore, in general, the target is bonded to a backing plate made of copper (copper) and having a refrigerant circulation path formed therein through a bonding material composed of a material having high thermal conductivity such as indium or tin to form a target assembly. Furnace is installed at the cathode electrode. As a result, the weight of the target assembly is heavy.

Therefore, as in the conventional technique, the total weight of the target assembly when reciprocating a plurality of parallel targets, i.e., the target assembly as a whole, becomes very large. For this reason, in order to reciprocally move each target assembly with high precision at constant speed and at equal intervals, a high performance motor and the like are required along with high torque, resulting in high cost. In addition, if the target assembly or the magnet assembly is continuously moved during sputtering, the plasma in front of the target may fluctuate. If the plasma fluctuates, abnormal discharge (arc discharge) may be caused, and a good thin film formation may be inhibited. have.

For this reason, in view of the above, the object of the present invention is to provide a plurality of targets in one or a plurality of chambers at regular intervals, and to form a predetermined thin film or laminated film by sputtering. The present invention provides a thin film forming method and a thin film forming apparatus which can suppress the film thickness distribution and the film quality distribution of waving in a thin film, and can form a favorable thin film.

In order to solve the above problems, the method for forming a thin film according to claim 1, in the case where a predetermined thin film is formed by sputtering while supplying electric power to a plurality of targets which are arranged at equal intervals to face the processing substrate in the sputter chamber, It is characterized by moving the processing substrate at regular intervals parallel to the parallel target.

According to this, after the processing substrate is moved to a position facing the targets arranged at equal intervals, electric power is supplied to each target while introducing a sputter gas to form a plasma atmosphere in the sputter chamber, and the ions in the plasma atmosphere It is accelerated toward the target to be impacted, and the target atom is scattered toward the processing substrate to form a thin film on the surface of the processing substrate. During the thin film formation (during sputtering), the processing substrate is moved at regular intervals parallel to each target, so that the processing substrate can be opposed to the area where the sputter particles of the target surface are emitted over the entire surface of the processing substrate. It is possible to suppress the nonuniformity of the film thickness distribution and the film quality distribution at the time of reactive sputtering.

During sputtering, each of the parallel targets (that is, the target assembly to which the backing plate is bonded) is in a stationary state, so that abnormal discharge due to fluctuations in the plasma can be prevented and favorable thin film formation can be achieved. In addition, since the processing substrate which is lighter in weight than the plurality of target assemblies is moved, there is no need for driving means such as a motor having a high precision or a high torque, such as when the target assembly is reciprocated integrally. In addition, in an inline sputtering apparatus in which sputtering chambers arranged on the same line are sequentially transported to form laminated films, substrate transport means for transporting the processing substrates is provided at a position opposite to the target of each sputtering chamber. When the processing substrate is reciprocated using this conveying means during sputtering, there is no need to provide another driving means for the reciprocating motion of the processing substrate, so that the cost can be reduced.

In addition, when the processing substrate is continuously reciprocated at a constant speed, during the sputtering, the surface of the processing substrate may be substantially uniformly opposed to the region where the sputtered particles of the respective target surfaces are discharged.

When the processing substrate reaches the returning position of the reciprocating motion, if the reciprocating motion of the processing substrate is stopped for a predetermined time, the sputter particles directed toward the processing substrate on the basis of the target type, that is, the scattering distribution during sputtering of each target, According to the quantity, only by setting the stop time of the process board at each return point suitably, it can suppress that the film thickness distribution and film | membrane distribution which waved very small to the thin film formed in the process board surface generate | occur | produce.

As described above, when the reciprocating motion of the processing substrate is stopped for a predetermined time, when the processing substrate is moved from one returning position to the other, the power supply to the target may be stopped.

Further, the magnet assembly provided to form the tunnel-shaped magnetic flux in front of the target is reciprocated at a constant speed parallel to the target, and at least one magnet assembly is stopped while the reciprocating motion of the processing substrate is stopped for a predetermined time. It is preferable to reciprocate once.

Moreover, in order to solve the said subject, the thin film formation method of Claim 6 conveys a process board in the position which opposes each target of each sputter chamber between the several sputter chambers in which the same number of targets were arranged at equal intervals, A thin film forming method in which power is applied to each target in a sputter chamber having a processing substrate, and each target is sputtered to deposit the same or different thin films on the surface of the processing substrate. It is characterized in that the stop position of the processing substrate is changed so that the regions facing each target on the surface of the processing substrate are deviated from each other in the substrate transport direction.

According to this, in one sputter chamber, a process board is moved to the position which opposes each target parallelly equidistant, electric power is supplied to each target, and one thin film is formed in the process board surface by sputtering. In this state, sputter particles are not emitted from the region between each target, so that one thin film is nonuniform so that the thick portion and the thin portion of the film thickness repeat at the same period. Next, the processing substrate on which one thin film is formed is transferred into another sputter chamber, and electric power is supplied to each target in another sputter chamber to stack another thin film by sputtering.

In this other sputter chamber, a region facing each target in the surface of the processing substrate is combed in the substrate conveying direction so that the stop position of the processing substrate is positioned, that is, a film of the processing substrate in which, for example, one thin film is formed. By opposing the thick portions of the thickness to the areas between the targets and the thin portions opposing the sputtering surfaces of the targets, by replacing the thick portions and the thin portions of the film thickness when laminating different thin films with almost the same film thickness, The film thickness as the laminated film becomes almost uniform over the entire surface of the processing substrate, and as a result, it is possible to prevent the film thickness distribution on the surface of the processing substrate and the film quality distribution during reactive sputtering from waving unevenly. In the case of forming a thin film in each sputter chamber, since the target assembly is in a stationary state, as described above, a favorable thin film can be formed without causing abnormal discharge.

In the sputtering, alternating polarities are alternately applied at predetermined frequencies for each pair of targets of the plurality of parallel targets, and an alternating voltage is applied to each of the targets, which are alternately converted into anode electrodes and cathode electrodes, respectively. And forming a plasma atmosphere by causing a glow discharge between the cathode electrodes and sputtering each target, a stable discharge can be obtained by applying an opposite phase voltage to the charge accumulated on the target surface, thereby generating abnormal discharge. In addition to being able to prevent the film formation, a more favorable thin film can be formed.

Furthermore, in order to solve the said subject, the thin film forming apparatus of Claim 8 has the several sputtering chambers separated from each other, the several targets which were provided in the each sputtering chamber at the same number and the same interval, and each sputtering chamber of the A substrate conveying means for conveying the processing substrate at a position opposed to each target, and between the sputter chambers which form a thin film in succession, so that regions of the surface of the processing substrate which face each target are combed to each other in the substrate conveying direction; A positioning means for positioning the processing substrate in the sputter chamber is provided.

In each of the sputter chambers, a mask plate having an opening facing the processing substrate is provided between the substrate transport means and the target, and the openings of the mask plates are interposed between the sputter chambers which continuously form a thin film. The above-mentioned positioning means may be constituted by providing detection means for detecting that regions on the surface of the surface facing each other are moved away from each other in the substrate conveyance direction, and detecting that the processing substrate is conveyed to a position facing the opening of the mask plate.

In addition, it is preferable to provide a magnet assembly for forming a tunnel-shaped magnetic flux in front of each target behind the parallel target, and to provide driving means for reciprocating the magnet assembly in parallel with the target.

As described above, in the thin film forming method and the thin film forming apparatus of the present invention, a plurality of targets are arranged in one or a plurality of chambers at regular intervals to form a predetermined thin film or laminated film by sputtering. It is possible to suppress the film thickness distribution and the film quality distribution from waving on the thin film on the surface, and to prevent the occurrence of abnormal discharge and to form a favorable thin film.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows typically the thin film forming apparatus of this invention.

It is a figure explaining the film thickness distribution at the time of forming a thin film by sputtering in which multiple targets were added together.

3 is a view for explaining a mask plate.

It is a figure which shows typically the modification of the thin film forming apparatus of this invention.

FIG. 5 is a graph showing the film quality distribution in the plane of the substrate of the laminated film prepared in Example 2. FIG.

(Explanation of the sign)

1 sputter device

11a, 11b sputter chamber

13 Mask Plate 13a, 13b Opening

2 board conveying means

21 carrier 31a to 31d target

35 sputter power

5a, 5b gas introduction means

S processing board

Referring to FIG. 1, 1 is the magnetron sputtering apparatus (henceforth a "sputter apparatus") of this invention. The sputtering apparatus 1 is an inline type, and has the vacuum chamber 11 which can be maintained at predetermined | prescribed vacuum degree through vacuum exhaust means (not shown), such as a rotary pump and a turbo molecular pump. The partition plate 12 is provided in the center part of the vacuum chamber 11. Two sputter chambers 11a and 11b having substantially the same volume separated from each other by the partition plate 12 are defined. The substrate conveying means 2 is provided in the upper part of the vacuum chamber 11. This substrate conveying means 2 has a well-known structure, for example, has a carrier 21 on which a processing substrate S is mounted, and drives sputter chambers 11a which are not shown intermittently to drive them. And 11b), the processing substrate S can be sequentially conveyed to a position facing the target to be described later.

In each sputter chamber 11a, 11b, the mask plate 13 is provided between the board | substrate conveying means 2 and a target, respectively. Each mask plate 13 has openings 13a and 13b facing the processing substrate. The mask plate 13 carries the processing substrate S at a position facing the target described later to form a predetermined thin film by sputtering. 21) Prevents sputter particles from adhering to the surface or the like. Moreover, the cathode electrode C of the same structure is arrange | positioned under each sputter chamber 11a, 11b.

The cathode electrode C has eight targets 31a to 31h which are arranged to face the processing substrate S. The cathodes C are arranged to face each other. Each target 31a-31h is manufactured by a well-known method according to the composition of the thin film which is going to form on the surface of the process board | substrate S, such as Al, Ti, Mo, and ITO, For example, it is a substantially rectangular parallelepiped (rectangle from a top view). Is formed in the same shape. Each target 31a-31h is joined to the backing plate 32 which cools target 31a-31h through sputtering through bonding materials, such as indium and tin, respectively, and is comprised as a target assembly. The targets 31a to 31h are arranged side by side at equal intervals so that the sputter surface 311 when not in use is located on the same plane parallel to the processing substrate S, and the back side of the backing plate 32 (sputter surface 311). ) And the support plate 33 which is continuously present in the direction in which the respective targets 31a to 31h are arranged on the side oriented to the side).

On the support plate 33, a shield plate 34 surrounding each of the targets 31a to 31h is provided, and the shield plate 34 fulfills the role of an anode during sputtering, and also targets 31a to 31h. When the plasma is generated in front of the sputtering surface 311 of the (), the plasma is prevented from returning to the rear of the targets 31a to 31h. The targets 31a to 31h are connected to DC power supplies (sputter power supplies 35) provided outside the vacuum chamber 11, respectively, and can independently apply a predetermined DC voltage to the targets 31a to 31h.

Moreover, the cathode electrode C has the magnet assembly 4 arrange | positioned and provided in the back (direction orientated with the sputter surface 311, lower part in FIG. 1) of the target 31a-31h, respectively. Each magnet assembly 4 of the same structure has the support plate 41 provided in parallel with each target 31a-31h. When the targets 31a to 31h are rectangular from the front, the support plate 41 is narrower than the width of each target 31a to 31ha and extends to both sides along the long direction of the targets 31a to 31h. It is made of a magnetic material that amplifies the attraction force of the magnet, which is composed of a rectangular flat plate formed. On the support plate 41, the center magnet 42 arrange | positioned at the center part in the shape of a rod, and the peripheral magnet 43 arrange | positioned along the outer periphery of the support plate 41 are provided changing the polarity of the sputter surface 311 side. .

The volume when converted to the same magnetization of the central magnet 42 is, for example, the sum of the volumes when converted to the same magnetization of the peripheral magnet 42 (peripheral magnet: center magnet: peripheral magnet = 1: 2: 1). Designed to be the same, in front of the sputter surface 311 of each target 31a-31h, the balanced magnetic flux of the closed loop tunnel is formed, respectively. As a result, by capturing secondary electrons generated by the electrons and sputters ionized in front of each of the targets 31a to 31h, the electron density in the front of each target 31a to 31h is increased to increase the plasma density. The sputtering rate can be made high.

Each magnet assembly 4 is connected to the drive shaft 51 of the drive means 5a, 5b comprised of a motor, an air cylinder, etc., respectively, between two positions along the parallel direction of the target 31a-31h. It is possible to reciprocate in parallel and at the same speed integrally. Thereby, the area | region which a sputtering rate becomes high can change, and the erosion area | region can be obtained evenly over the whole surface of each target 31a-31h.

The vacuum chamber 11 is provided with gas introduction means 6a, 6b which introduce sputter gas, which is a rare gas such as Ar, into the sputter chambers 11a, 11b, respectively. The gas introduction means 6a, 6b of the same structure has the gas pipe 61 provided in the side wall of the vacuum chamber 11, for example, and the gas pipe 61 passes through the mass-flow controller 62, and is a gas supply source. It communicates with (63). Moreover, when forming a predetermined | prescribed thin film on the surface of the process board | substrate S by reactive sputtering, the other gas introduction means which introduces reactive gases, such as oxygen and nitrogen, into the sputter chambers 11a and 11b, respectively is provided.

And the carrier 21 in which the process board | substrate S was set by the board | substrate conveying means 2 is conveyed to the position which opposes targets 31a-31h in one sputter chamber 11a (at this time, a process board | substrate ( S) and the opening 13a of the mask plate 13 are positioned at positions coincident with each other in the vertical direction). Then, a sputter gas (or reaction gas) is introduced through the gas introduction means 5a under a predetermined pressure, and a negative DC voltage is applied through the DC power supply 35 to the targets 31a to 31h. An electric field perpendicular to the processing substrate S and the targets 31a to 31h is formed to form a plasma atmosphere in front of the targets 31a to 31h. Ions in the plasma atmosphere are accelerated and impacted toward the targets 31a to 31h, and sputter particles (target atoms) are scattered toward the processing substrate S to form one thin film on the surface of the processing substrate S. As shown in FIG.

Next, the processing substrate S on which one thin film is formed is conveyed to the other sputter chamber 11b, and the negative DC voltage is applied through the DC power supply 35 through the targets 31a to 31h as described above. Another thin film of the same or different type is laminated on the surface of one thin film formed on the surface of the processing substrate S by sputtering.

By the way, in the said sputtering apparatus 1, sputter | spatter particle is not discharge | released in the area | region R1 between each target 31a-31h. For this reason, as shown in FIG. 2, when a predetermined thin film is formed on the surface of the processing substrate S, the film thickness distribution becomes uneven so that the thick and thin portions of the film thickness are repeated at the same cycle. This nonuniformity becomes more remarkable when a predetermined thin film is laminated. In this case, when the transparent electrode (ITO) is formed on the glass substrate, the liquid crystal is encapsulated, and the FPD is produced, unevenness occurs on the display surface. Thus, the film thickness distribution and the unevenness of the film quality distribution are improved. Needs to be.

In this embodiment, between the sputtering chambers 11a and 11b, the part of the process board | substrate S surface which opposes the area | region R1 between each target 31a-31h mutually combs each other in a board | substrate conveyance direction. It is assumed that the stop positions of the processing substrates S in the respective sputter chambers 11a and 11b are changed. That is, one thin film is formed by sputtering by moving the processing substrate S at a predetermined position facing the targets 31a to 31h arranged at equal intervals in one sputter chamber 11a. The thin film of is non-uniform so that the thick part and thin part of a film thickness may repeat in a same period.

Then, when the processing substrate S on which one thin film is formed is moved in the other sputter chamber 11a at a position opposite to each target 31a to 31h, each target 31a to 31h is moved. The stop positions of the processing substrates S are changed so that the positions facing the regions R1 mutually deviate from each other in the substrate transport direction of the processing substrate S. As a result, in the other sputtering chamber 11b, the part with a thick film among the process board | substrates S in which one thin film was formed, respectively opposes the space 23 between targets 31a-31h, and targets a thin part, respectively. It faces the sputter surface 311 of 31a-31h. As a result, when different thin films are laminated at substantially the same film thickness, by changing the thick portion and the thin portion of the film thickness, the film thickness as the two layer film becomes almost uniform on the entire surface of the processing substrate S. As a result, the processing substrate (S) It can prevent that the film thickness distribution on the surface and the film quality distribution at the time of reactive sputtering become uneven like a wave.

In the present embodiment, for forming the thin film, the opening 13a of the mask plate 13 in one sputter chamber 11a and the opening 13a of the mask plate 13 of the other sputter chamber 11b are formed on a substrate. It was formed so as to move away from each other in the conveying direction, so as to achieve a criterion for determining the stop position of the processing substrate S which is conveyed to the positions facing the targets 31a to 31h in the respective sputter chambers 11a and 11b (see Fig. 3). ). The carrier 21 moves to a position where the processing substrate S faces each of the openings 13a and 13b of the mask plate 13 (a position where the processing substrate S and the opening 13a coincide in the vertical direction). When it did, the detection means which detects this, for example, the position sensor 6 of a well-known structure was provided in the vacuum chamber 11, and the positioning means was comprised. Thereby, when conveying the process board | substrate S in order to convey several sputter chambers 11a and 11b, the process board | substrate S is carried out in each sputter chamber 11a, 11b so that the thick part and thin part of a film thickness may change. Can position the precision nicely.

In addition, in this embodiment, although the process board | substrate S was conveyed by the two sputter chambers 11a and 11b one by one, and it prevents the film thickness distribution and the non-uniformity of film quality distribution which waved, it is not limited to this. For example, in the case where three sputter chambers are provided and the processing substrate S is transported in each sputter chamber by the substrate transporting means 2 to form a three-layer film, three sputter chambers facing the regions between the targets are formed. Stop the processing substrates in each sputter chamber to deviate from each other.

For example, in the case of forming the first and second thin films of the three-layer film, as described above, the stop positions of the processing substrates in the respective sputter chambers are shifted so that the portions facing the areas between the targets are deflected from each other. In order to form a thin film and then form the remaining third film, the third thin film is formed by adjusting the film thickness of the first and second thin films and the third thin film to be close to 1: 1. good. As a result, the film thickness distribution on the surface of the processing substrate S and the film quality distribution during the reactive sputtering are prevented from becoming uneven as if waving.

In addition, in this embodiment, although the case where the process board | substrate is conveyed between several sputter chambers and the thin film was formed was demonstrated, it is not limited to this, As shown in FIG. 4, in one sputter chamber 110, it has been described. And controlling the driving means of the substrate transfer means 2, and setting it on the processing substrate S at a constant interval D or a predetermined speed (for example, 1 to 110 mm / s) in parallel to the targets 31a to 31h. You may comprise the sputtering apparatus 10 so that the carried carrier 21 may be reciprocated.

According to the above structure, during the sputtering, the processing substrate S is moved at a constant interval in parallel to each of the targets 31a to 31h, so that sputter particles on the surfaces of the targets 31a to 31h over the entire surface of the processing substrate S. It is possible to oppose the region R1 from which is emitted. As a result, in one sputter chamber 110, it is possible to suppress unevenness of the film thickness distribution on the surface of the processing substrate S and the film quality distribution during reactive sputtering.

When the processing substrate S reaches the returning positions P1 and P2 of the reciprocating motion, the driving means of the substrate transporting means 2 is controlled so that the processing substrate S is held for a predetermined time (for example, 60 seconds). May be stopped). This stops the processing substrate S at each of the return points P1 and P2 according to the target type, i.e., the amount of sputtered particles directed toward the processing substrate S based on the scattering distribution during sputtering of each target. By setting the time appropriately, it is possible to further suppress the occurrence of a film thickness distribution or a film quality distribution which are very small in the thin film formed on the surface of the processing substrate S. At this time, it is preferable to reciprocate the magnet assembly 4 at least once, and in order to increase the degree of freedom of control for suppressing the wave film thickness distribution or the film quality distribution, the processing substrate S is returned to one side. When moving from the position P1 (or P2) to the other P2 (or P1), power supply to the targets 31a to 31h may be stopped, and a thin film may be formed only when the processing substrate S is stopped.

In the sputtering apparatuses 1 and 10 of any of the above configurations, since the target assemblies 31 and 32 are in a stopped state during sputtering, the occurrence of abnormal discharge (arc discharge) due to the fluctuation of plasma can be prevented, Good thin film formation becomes possible. In addition, since the processing substrate S, which is lighter in weight than the plurality of targets 31 and 32, is moved, the same high precision and high torque motor as in the case of reciprocating the plurality of target assemblies 31 and 32 integrally. No driving means is required. In particular, in the case of the in-line sputtering apparatus 1 of the present embodiment, when the processing substrate S is reciprocated using the substrate transporting means 2, other driving means for the reciprocating movement of the processing substrate S is performed. There is no need to provide a separate cost and cost savings can be achieved.

In addition, in this embodiment, although the DC power supply 35 is used as a sputter | spatter power supply, it is not limited to this, Two of each of the targets 31a-31h provided in parallel form a pair, and a pair of target 31a is carried out. The output cables may be connected to the 31 to 31h, respectively, and the voltage may be applied to the pair of targets 31a to 31h by alternately changing polarities at predetermined frequencies (1 to 400 KHz). As a result, each target 31a to 31h is alternately converted into an anode electrode and a cathode electrode to cause a glow discharge between the anode electrode and the cathode electrode so that a plasma atmosphere is formed so that ions in the plasma atmosphere become cathode electrodes ( The target atoms may be scattered and attached to and deposited on the surface of the processing substrate S to form a predetermined thin film.

On the other hand, in the case where a predetermined thin film is formed on the surface of the processing substrate S by reactive sputtering, when the reactive gas is introduced into the sputter chambers 11a and 11b, staining occurs reactively on the surface of the processing substrate S. At least one gas pipe extending in the parallel direction of the targets 31a to 31h is provided at the rear of each magnet assembly 4, and one end of the gas pipe is passed through a mass-flow controller to provide reactive gas such as oxygen. The gas introduction means for the reactive gas may be configured by connecting to a gas supply source.

A plurality of injection holes are provided on the target side of the gas pipe at predetermined intervals with the same diameter, and the reactive gas is injected from the injection holes formed in the gas pipe, so that the reactive gas is formed in the space behind the respective targets 31a to 31h. It diffuses once and then supplies it toward the process board | substrate S through each clearance gap between each parallel target 31a-31hd.

Example 1

In Example 1, two layers of Al films were laminated on a processing substrate by sputtering using the sputtering apparatus 1 shown in FIG. As targets 31a to 31h in each of the sputter chambers 11a and 11b, 99.99% of Al was formed into a substantially rectangular shape by a known method in a known plan view of 200 mm x 2300 mm x thickness 16 mm, and bonded to the backing plate 32. Then, it arrange | positioned on the support plate 33 at intervals of 270 mm. On the other hand, a glass substrate having an external dimension of 1500 mm x 1350 mm was used as the processing substrate. The distance between the target and the processing substrate was set to 160 mm.

The mass-flow controller is controlled to introduce Ar into the sputter chambers 11a and 11b so that the pressure in the sputter chambers 11a and 11b evacuated as a sputtering condition is maintained at 0.5 Pa. Was set to 120 ° C. In addition, in one sputter chamber 11a, the processing board S is stopped so that it may become the same axis as the outer side of the target, and in another sputter chamber 11b, the processing is carried out at the position moved 135 mm in the processing board conveyance direction. It was assumed that the substrate S was stopped. 30 kW of electric power was applied to each target in each of the sputter chambers 11a and 11b, and sputtered for 50 seconds. Two layers of Al films were laminated on the surface of the processing substrate at a thickness of 150 nm to obtain an Al film of 300 nm.

(Comparative Example 1)

As Comparative Example 1, using a sputtering apparatus 1 shown in FIG. 1, two layers of 150 nm film thickness were laminated on the surface of the substrate under the same conditions as in Example 1 to obtain an Al film of 300 nm. In addition, in each sputter chamber 11a, 11b, the process board | substrate S was stopped each so that it might become substantially the same axis as the parallel target.

According to this, in the comparative example 1, the part with high sheet resistance value and the low part repeated in the same period, and the film thickness distribution was +/- 12.3%. On the other hand, in Example 1, the amplitude of the waving film thickness distribution is suppressed to almost half, and the film thickness distribution is ± 6.6%, so that the film thickness distribution or the film quality distribution on the surface of the processing substrate are unevenly distributed. It can be seen that it can be suppressed.

Example 2

In the present Example 2, although the Al film was formed in the process board | substrate by sputtering using the sputtering apparatus 10 shown in FIG. 4, the number of sheets of targets added was 12 sheets. In addition, each target was formed into a substantially rectangular shape by a known method using 99.99% Al in a planar view of 180 mm × 2650 mm × 16 mm in thickness, bonded to the backing plate 32, and supported by a space of 202 mm. Placed on top. On the other hand, a glass substrate having an external dimension of 1950 mm x 2250 mm was used as the processing substrate. The distance between the target and the processing substrate was set to 150 mm.

The mass-flow controller is controlled to introduce Ar into the sputter chamber 110 so that the pressure in the sputter chamber 10 which is evacuated as a sputtering condition is maintained at 0.3 Pa, and the processing substrate S temperature is 120 ° C. The power input to each target was set to 75 kW. At the time of forming the thin film, first, the driving means of the substrate transfer means 2 is controlled to move the processing substrate to one of the return positions P1, and in this state, the sputtering time is set to 40 seconds and the surface of the processing substrate is sputtered. The 1st Al film was formed in the film thickness of 300 nm.

Then, after stopping the power supply to the target once, the substrate transfer means 2 moves the processing substrate to the other return position P2, and in this state, the sputter time is set to 40 seconds By sputtering, a second Al film was laminated on the surface of the processing substrate at a thickness of 300 nm, and an Al film having a thickness of 600 nm was obtained as a whole (that is, the processing substrate was stopped at the position where the reciprocating motion of the processing substrate was returned. Power was applied to the target only at each return position). Moreover, the space | interval between returning positions was set to 100 mm.

5 shows the length of the Al film obtained in Example 2; The sheet resistance distribution (film quality distribution) along the direction is indicated along with the distribution of sheet resistance values obtained when the Al films (300 nm) are obtained under the sputtering conditions as described above at the respective return positions (P1 and P2). It is a graph. According to this, when forming an Al film in each return position, the high part and the low part of a sheet resistance value were repeated in the same period, and the distribution of the sheet resistance value was +/- 6.5%. On the other hand, in Example 2, when the thin film is formed, the position of the processing substrate with respect to the parallel target is shifted to the substrate transport direction (the parallel direction of the target), whereby the distribution of the sheet resistance value is ± 2.7%. It can be seen that the nonuniformity of the film thickness distribution and the film quality distribution on the surface of the substrate can be suppressed.

Claims (10)

When a predetermined thin film is formed by sputtering by supplying electric power to a plurality of targets arranged at equal intervals facing the processing substrate in the sputter chamber, the processing substrate is moved at regular intervals in parallel to the parallel targets. Thin film formation method. The method of claim 1, wherein the processing substrate is continuously reciprocated at a constant speed. The thin film forming method according to claim 2, wherein when the processing substrate reaches a return position of the reciprocating motion, the reciprocating motion of the processing substrate is stopped for a predetermined time. 4. The method of forming a thin film according to claim 3, wherein when the processing substrate moves from one return position to the other, power input to a target is stopped. The magnetic assembly of claim 3 or 4, wherein the magnet assembly provided to form the tunnel-shaped magnetic flux in front of the target is reciprocated at a constant speed parallel to the target, and the reciprocating motion of the processing substrate is stopped for a predetermined time. A method of forming a thin film, characterized in that the magnet assembly is reciprocated at least once. Between a plurality of sputter chambers in which the same number of targets are arranged at equal intervals, the processing substrate is transported to a position facing each target of each sputter chamber, and electric power is supplied to each target in the sputter chamber where the processing substrate is located. A thin film formation method for sputtering targets and stacking the same or different thin films on the surface of the processing substrate, wherein the regions of the processing substrate surfaces facing each other on the surface of the processing substrate are deviated from each other in the substrate conveying direction between the respective sputter chambers that continuously form the thin films. A thin film forming method, characterized in that the stop position of the processing substrate is changed. The method according to any one of claims 1 to 6, wherein alternating polarity is alternately applied at a predetermined frequency for each pair of targets paired with each other, and alternating current is applied to each of the targets by the anode electrode and the cathode electrode. Converting, causing a glow discharge between the anode electrode and the cathode electrode to form a plasma atmosphere, and sputtering each target. A plurality of sputter chambers separated from each other, a plurality of targets arranged equally and equally in each sputter chamber, and substrate transfer means for conveying the processing substrate at positions opposed to each target of each sputter chamber; And positioning means for positioning the processing substrate in each sputter chamber so that the regions facing each target on the surface of the processing substrate are separated from each other among the sputter chambers forming the thin film. Thin film forming apparatus. The sputter chamber according to claim 8, wherein a mask plate having an opening facing the processing substrate is provided between the substrate transport means and the target in each of the sputter chambers, and the opening of each mask plate continuously forms a thin film. Between the processing substrates, the regions facing each target are formed to be inclined with respect to each other in the substrate conveyance direction, and detection means for detecting that the processing substrate is conveyed to a position facing the opening of the mask plate is provided, thereby providing the positioning means. Thin film forming apparatus comprising a. The magnet assembly which forms a tunnel-shaped magnetic flux in front of each target in the rear of the said target, respectively, and the drive means which reciprocates the said magnet assembly in parallel with a target is provided, respectively. Thin film forming apparatus, characterized in that.

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