KR20090092113A - Polarizer and organic light emitting display apparatus comprising the same - Google Patents

Abstract

A polarizer and an organic light emitting device including the same are provided to improve contrast and visibility by preventing the reflection of the external light by the destructive interference of the external light reflected in a grid. A polarizer includes a base and a grid(12). The grid includes a first metal layer(13), a second metal layer(14), and an intermediate layer(15). The first metal layer is formed in one surface of the base. The second metal layer is formed on the first metal layer. The intermediate layer is arranged between the first metal layer and the second metal layer. The metal layer closed to the external light is a translucent film and has the lower reflexibility of the external light than the remaining metal layer.

Description

Polarizer and organic light emitting display apparatus comprising the same

 The present invention relates to a polarizer and an organic light emitting display including the same, and more particularly, to a polarizer for improving contrast and visibility and an organic light emitting display including the same.

Recently, display devices have been replaced by portable thin flat display devices. Among flat panel display devices, organic or inorganic light emitting display devices are attracting attention as next-generation display devices because of their advantages of having a wide viewing angle, excellent contrast, and fast response speed. In addition, an organic light emitting display device in which a light emitting layer is formed of an organic material has excellent luminance, driving voltage, and response speed, and may be multicolored, compared to an inorganic light emitting display device.

On the other hand, the flat panel display is portable and can be used outdoors, and is manufactured in a lightweight and thin form to satisfy such an object. In this case, when the image is viewed outdoors, sunlight is reflected, thereby deteriorating contrast and visibility. In particular, in the organic light emitting diode display, the reflection is severe in the metal reflective film, which is a more serious problem.

To solve this problem, a circular polarizer is disposed on one surface of the organic light emitting diode display. And such circular polarizers usually include linear polarizers having a wire grid of thin metal. At this time, the grid made of a metal material reflects external light due to the characteristics of the material, so there is a limit to improving the contrast.

The present invention can provide a polarizer capable of improving contrast and visibility of a flat panel display and an organic light emitting display including the same.

In order to improve contrast and visibility of the present invention, the present invention provides a base and a first metal layer formed on one surface of the base, a second metal layer formed on the first metal layer, and disposed between the first metal layer and the second metal layer. A grid having an intermediate layer, wherein a metal layer located closer to external light of the first metal layer and the second metal layer is a semi-transmissive film that reflects some of the incident light and transmits some of the light, and has a greater external light reflectance than the remaining metal layers. Initiate a small polarizer.

According to another aspect of the invention, one surface of the substrate, the organic light emitting element formed on the substrate to implement an image, the sealing member formed on the organic light emitting element, the substrate, the organic light emitting element and the surface formed by the sealing member A 1/4 wavelength retardation layer formed on the substrate and the other one of the surfaces formed by the substrate, the organic light emitting element, the sealing member, and the quarter wavelength retardation layer, and the image is realized more than the quarter wavelength retardation layer. And a linear polarization layer positioned close to the direction of the direction, wherein the linear polarization layer includes a first metal layer, a second metal layer formed on the first metal layer, and an intermediate layer disposed between the first metal layer and the second metal layer. A metal layer comprising a grid, wherein the metal layer located closer to external light among the first metal layer and the second metal layer reflects part of the incident light and transmits part thereof An organic light emitting display device having an external light reflectance smaller than that of a remaining metal layer is disclosed.

In the present invention, the image is embodied in the direction of the substrate, the linear polarization layer is formed on the substrate, the quarter-wave retardation layer is formed on the linear polarization layer, and the organic light emitting element is the 1 / It can be formed on the four wavelength retardation layer.

In the present invention, the image is embodied in the direction of the substrate, the quarter-wave retardation layer is formed on the substrate, the organic light emitting element is formed on the quarter-wave retardation layer and the linear polarization layer May be formed on an opposite surface of the surface on which the quarter-wave retardation layer is formed.

In the present invention, the image is embodied in the direction of the substrate, and the quarter-wave retardation layer and the linear polarization layer may be sequentially formed on opposite sides of the surface on which the organic light emitting element is formed on both sides of the substrate. .

In the present invention, the image is embodied in the direction of the sealing member, the quarter-wave retardation layer is formed on the organic light emitting device, the linear polarization layer may be formed on the quarter-wave retardation layer. have.

In the present invention, a protective film may be further included between the organic light emitting element and the quarter-wave retardation layer.

In the present invention, the image is embodied in the direction of the sealing member, and the quarter-wave retardation layer and the linear polarizing layer are sequentially formed on opposite surfaces of the sealing member on which the organic light emitting element is formed. Can be.

In the present invention, the image is embodied in the direction of the sealing member, wherein the quarter-wave retardation layer is formed on a surface of the sealing member facing the organic light emitting element, and the linear polarization layer is formed on both surfaces of the sealing member. It may be formed on the opposite side of the surface of the quarter wave phase difference layer is formed.

In the present invention, the image is embodied in the direction of the sealing member, the linear polarizing layer is formed on the surface of the sealing member facing the organic light emitting element, the quarter-wave retardation layer is the It may be formed on the surface facing the organic light emitting device.

In the present invention, the image is embodied in the direction of the sealing member, and further comprises a reflective film interposed between the substrate and the organic light emitting element, wherein the quarter-wave retardation layer is between the reflective film and the organic light emitting element The linear polarization layer may be formed on the organic light emitting device.

In the present invention, the intermediate layer may include any one selected from the group consisting of SiOx (x ≧ 1), SiNx (x ≧ 1), MgF 2, CaF 2, Al 2 O 3 and SnO 2.

In the present invention, the first metal layer may be chromium, and the second metal layer may be aluminum.

In the present invention, the first metal layer, the second metal layer and the intermediate layer may be formed so that external light incident on the grid interferes with each other.

In the present invention, the first metal layer, the second metal layer and the intermediate layer may be stacked in the same pattern.

In the present invention, the grid may be patterned in a stripe form spaced apart at predetermined intervals.

In the polarizer and the organic light emitting diode display according to the present invention, external light reflected from the grid may cause destructive interference to prevent reflection of external light, thereby improving contrast and visibility.

Although described with reference to the embodiment shown in the drawings it is merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

1 is a schematic perspective view showing a polarizer according to an embodiment of the present invention.

FIG. 2 is a partial cross-sectional view taken along the line II-II of FIG. 1.

3 is a cross-sectional view schematically illustrating that external light is reflected from each grid of FIG. 2.

FIG. 4 is a graph schematically illustrating the phase of external light reflected in FIG. 3.

5 to 7 are graphs of polarization extinction ratio, transmittance, and reflectance measured according to the change in the thickness of the first metal layer in the polarizer of FIG. 1.

8 to 10 are graphs of polarization extinction ratio, transmittance and reflectance measured according to the change of the width of the grid in the polarizer of FIG.

11 to 13 are graphs of polarization extinction ratio, transmittance and reflectance measured according to the change of the period of the polarizer in the polarizer of FIG.

14 to 19 are schematic cross-sectional views illustrating examples of a bottom emission type organic light emitting diode display according to an exemplary embodiment of the present invention, and enlarged cross-sectional views of respective linear polarization layers.

20 to 30 are schematic cross-sectional views illustrating examples of a top emission organic light emitting diode display according to another exemplary embodiment, and enlarged cross-sectional views of respective linear polarization layers.

31 and 32 are schematic cross-sectional views illustrating an example of a passive emission type bottom emission type organic light emitting diode display according to still another exemplary embodiment and an enlarged cross-sectional view of a linear polarization layer.

33 and 34 are schematic cross-sectional views illustrating an example of a bottom emission type organic light emitting diode display of an active driving method and an enlarged cross-sectional view of a linear polarization layer according to still another embodiment of the present invention.

35 is a schematic cross-sectional view illustrating another example of a bottom emission type organic light emitting diode display according to another exemplary embodiment of the present invention.

36 and 37 are schematic cross-sectional views illustrating an example of a passive emission type top-emitting organic light emitting diode display according to still another exemplary embodiment and an enlarged cross-sectional view of a linear polarization layer.

38 and 39 are schematic cross-sectional views illustrating an example of an active driving type top emission type organic light emitting diode display and an enlarged cross-sectional view of a linear polarization layer according to another exemplary embodiment of the present invention.

<Brief description of symbols for the main parts of the drawings>

10: polarizer 11: base

12: grid 13: first metal layer

14: second metal layer 15: intermediate layer

20: substrate 21: 1/4 wavelength retardation layer

22: linear polarization layer 30: organic light emitting device

31: first electrode 32: organic light emitting layer

33: second electrode 34: reflective film

35: internal insulating film 36: separator

40: protective film 41: buffer layer

42: semiconductor layer 43: gate insulating film

44 gate electrode 45 interlayer insulating film

46: source electrode 47: drain electrode

48: passivation film 49: pixel defining film

50: sealing member

Hereinafter, with reference to the embodiments of the present invention shown in the accompanying drawings will be described in detail the configuration and operation of the present invention.

1 is a schematic perspective view illustrating a polarizer according to an exemplary embodiment of the present invention, and FIG. 2 is a partial cross-sectional view taken along the line II-II of FIG. 1. FIG. 3 is a graph schematically illustrating reflection of external light in each grid of FIG. 2.

1 and 2, the polarizer 10 includes a base 11 and a grid 12. The base 11 may be made of a transparent material. This is to allow the light generated in the display device in which the polarizer 10 is to be passed through well. To this end, the base 11 may be made of glass or flexible plastic, but is preferably formed of a material including plastic for film formation.

A plurality of grids 12 are formed on the base 11. The grid 12 may be formed to have a stripe-shaped pattern spaced apart from each other in a form of parallel lines for the purpose of polarizing only specific polarization in the electromagnetic wave. The width w of the grid 12 may be 10 to 500 nanometers and the thickness t may be 50 to 500 nanometers for use as a polarizer for visible light. There is a constant interval P between the plurality of grids 12. Therefore, the width of the spaced space between the grids 12 is defined as (P-W). The width P-W is an important factor in determining the performance of the polarizer 10. If the width P-W between the grids 12 is long compared to the wavelength of the incident light, the polarizer 10 mainly functions as a diffraction grating rather than a polarization function. On the contrary, if the width P-W between the grids 12 is shorter than the light of the incident wavelength, the grids 12 mainly perform polarization functions.

Of the optical constants, the optical constant k is an index related to light absorption. The larger the value of k, the better the polarizer absorbing light oscillating in a particular direction. Metals have been widely used in conventional grids because of their large k-values. However, the high reflectance on the surface of the metal has a limitation in improving the overall contrast of the display device due to the reflection of external light on the surface of the grid.

The grid 12 of the present invention comprises a first metal layer 13, a second metal layer 14 and an intermediate layer 15. The intermediate layer 15 is disposed between the first metal layer 13 and the second metal layer 14. The external light reflectance of the metal layer located closer to the external light among the first metal layer 13 and the second metal layer 14 is smaller. In FIG. 1 and FIG. 2, external light is incident from the opposite direction of the base 11, that is, from the top of the drawing. Therefore, the reflectance of the second metal layer 14 closer to the external light is smaller than the reflectance of the first metal layer 13.

The first metal layer 13 may be aluminum having high reflectance. The second metal layer 14 may be chromium having a lower reflectance than aluminum. However, the present embodiment is not limited thereto. The first metal layer 13 and the second metal layer 14 can be formed without limitation as long as they can cause destructive interference to be described later by using a metal having a difference in reflectance.

The intermediate layer 15 comprises a transparent material. The intermediate layer 15 may be formed of an insulating transparent material such as SiO x (x ≧ 1), SiNx (x ≧ 1), MgF 2, CaF 2, Al 2 O 3, SnO 2, or the like. In addition, the intermediate layer 12b may be formed using a transparent conductive material such as ITO, IZO, ZnO, or In 2 O 3.

Referring to FIG. 3, the first and second metal layers 13 and 14 function as a semi-transmissive layer that transmits a part of the external light and reflects the part when the external light is incident. In particular, the second metal layer 14 positioned in the direction in which the external light is incident may transmit the external light so that the transmitted external light may be reflected by the first metal layer 13.

The thickness t2 of the second metal layer 14 may be formed into a thin film of several nanometers to several hundred nanometers to function as a semi-transmissive film. When external light is incident, the second metal layer 14 of the grid 12 is first reached and a part of the external light R1 is reflected. Another portion of the external light passes through the second metal layer 14 to reach the first metal layer 13. External light reaching the first metal layer 13 is reflected. The external light reflected by the first metal layer 13 is emitted through the second metal layer 14.

In this way, the external light reflected by the first and second metal layers 13 and 14 in the direction in which the external light is incident is defined as R1 and R2. A phase difference exists between R1 and R2 which are reflected light. The grid 12 is formed so that the reflected light causes destructive interference due to the phase difference. This can be easily implemented by adjusting the thickness and refractive index of the intermediate layer 15.

R1 and R2 have a phase difference of 2 * n * t ₃ / λ. Where n is the refractive index of the intermediate layer 15 and t ₃ is the thickness of one layer of the intermediate layer 12b and λ is the wavelength of external light, as shown in FIG. 3. At this time, when the phase difference is (2 * N + 1) 1/2 (N is an integer), destructive interference occurs. For example, when the wavelength of external light is 480 nanometers, the refractive index of the intermediate layer 15 is 1.5 and the thickness of the intermediate layer 15 is 80 nanometers, the phase difference is 2 * 1.5 * 80/480 = 1/2, which causes offset interference. .

Considering the thickness and the material of the intermediate layer, various structures that cause destructive interference can be formed.

However, the strengths of R1 and R2 are different. When the external light is incident on the grid 12, part of the second metal layer 14, which is a semi-transmissive metal layer, reflects partly and partly transmits and continues. Therefore, the amount of external light reaching the first metal layer 13 is smaller than the amount of external light reaching the second metal layer 14. However, when the first metal layer 13 is formed of a metal having a greater reflectance than the second metal layer 14, the size of the external light R2 reflected by the first metal layer 13 is determined by the external light R1 reflected by the second metal layer 14. ) Can be equal to the size.

4 is a graph schematically showing the phase of external light reflected by the first and second metal layers 13 and 14 of the grid 12. The x axis represents the displacement y axis represents the amplitude. As described above, the intermediate layer 15 is adjusted to adjust the phase difference so that destructive interference occurs as shown in FIG. 4. At this time, if the reflectances of the first metal layer 13 and the second metal layer 14 are the same, the external light R1 reflected by the second metal layer 14 and the external light reflected by the first metal layer 13 when external light is incident ( The size of R1) is different. As a result, even when adjusted to have a phase difference causing destructive interference, since the amplitude, which is substantially the intensity of light, is different, the effect of destructive interference is reduced.

However, according to the present invention, the external light reflectance of the first metal layer 13 is greater than that of the second metal layer 14 positioned closer to the external light so that the size of the external light R1 reflected from the second metal layer 14 and the first metal layer ( The size of the external light R2 reflected by 13 can be equalized, and in this case, the effect of destructive interference is increased. That is, the sum of R1 and R2 can be offset so that the sum thereof becomes zero.

Therefore, when the external light is incident on the grid 12, the effect of canceling interference of the reflected external lights is increased to prevent the reflection of the external light. As a result, the contrast enhancement effect is increased.

5 to 7 are graphs of polarization extinction ratio, transmittance, and reflectance measured according to the change in the thickness of the first metal layer in the polarizer of FIG. 1. For the experiment was prepared a polarizer 10 as shown in FIG. An interval P between the grids 10 is 230 nm, and the first metal layer 13 includes aluminum (Al). The second metal layer 14 includes chromium (Cr) and has a thickness t2 of 6 nm. The intermediate layer 15 comprises SiO 2 and the thickness t 3 is 80 nm. The width W of the grid 10 is 115 nm, which is 1/2 of the spacing P between the grids 10.

In FIGS. 5 to 7 (i), the thickness of the first metal layer 13 is 100 nm, (ii) the thickness of the first metal layer 13 is 150 nm, and (i) the thickness of the first metal layer 13 is 200 nm. (Iii) shows the grid 10 in which the thickness of the first metal layer 13 is 250 nm, and (iii) the thickness of the first metal layer 13 is 300 nm.

Referring to FIG. 5, as the thickness of the first metal layer 13 increases, the value of the polarization extinction ratio increases. 6 and 7, the transmittance and reflectance are even values.

8 to 11 are graphs of polarization extinction ratio, transmittance and reflectance measured according to the change in the width W of the grid 10 in the polarizer of FIG. 1. For the experiment was prepared a polarizer 10 as shown in FIG. The spacing P between the grids 10 is 230 nm, the first metal layer 13 comprises aluminum (Al), the thickness t1 is 200 nm, the second metal layer 14 comprises chromium (Cr) and the thickness t2. ) Is 6 nm. The intermediate layer 15 comprises SiO 2 and the thickness t 3 is 80 nm.

8 to 10, (i) is the width W of the grid 10 is 69 nm, (ii) is the width W of the grid 10 is 92 nm, (b) is the width W of the grid 10. ) Is 115 nm, (i) is the width W of the grid 10 is 138 nm, (i) is the grid 10 having a width W of 161 nm.

8 to 11, it can be seen that as the width W of the grid 10 increases, the value of the polarization extinction ratio increases, and the transmittance and reflectance decrease.

11 to 13 are graphs of polarization extinction ratio, transmittance and reflectance measured according to the change of the period of the polarizer in the polarizer of FIG. For the experiment was prepared a polarizer 10 as shown in FIG. The first metal layer 13 includes aluminum (Al), the thickness t1 is 200 nm, the second metal layer 14 includes chromium (Cr), and the thickness t2 is 6 nm. The intermediate layer 15 comprises SiO 2 and the thickness t 3 is 80 nm.

In FIGS. 11 to 13 (i), the interval P between the grids 10 is 80 nm, the width W is 40 nm, and (ii) the intervals P between the grids 10 is 110 nm and the width W is 55nm, (ⅲ) is 140nm spacing (P) between grid 10, width (W) is 70nm, (ⅳ) is 170nm, (W) is grid width (W) is 85nm, (ⅴ) ), The spacing P between the grids 10 is 200 nm, the width W is 100 nm, the spacing P is 230 nm, the width W is 115 nm, and the width W is the grid ( The grid 10 between the gaps 10) is 260 nm and the width W is 130 nm.

11 to 13, it can be seen that as the distance P between the grids 10 increases, the polarization extinction ratio and transmittance decrease, and the reflectance is almost insignificant.

The polarizer of this invention can be used for a flat panel display apparatus, such as an organic light emitting display. In the present invention, only the organic light emitting diode display will be described. In the organic light emitting diode display of the present invention, the base 11 is not required separately. A linear polarizing layer composed of a plurality of grids 12 is directly formed on a substrate, a sealing member, or the like. Since the grid 12 of the linear polarization layer to be described later is the same as the grid 12 of the polarizer 10 described above, a detailed structure, material, formation method, and the like will be omitted.

14 is a schematic cross-sectional view of an organic light emitting diode display according to an exemplary embodiment. As can be seen in FIG. 14, the organic light emitting diode display according to the exemplary embodiment of the present invention includes a substrate 20 made of a transparent material, a linear polarization layer 22 formed on the substrate 20 in order, and 1 /. The four wavelength retardation layer 21, the organic light emitting element 30, and a sealing member (not shown) are included.

The substrate 20 may be made of a transparent glass material mainly containing SiO ₂ . Although not shown, the upper surface of the transparent substrate 20 may further include a buffer layer (not shown) to block smoothness of the substrate 20 and penetration of impurities, and the buffer layer may be formed of SiO ₂ and / or SiNx. can do. The substrate 20 is not necessarily limited thereto, and may be formed of a transparent plastic material.

The linear polarization layer 22 is formed on the upper surface of the substrate 20. FIG. 15 shows the structure of the linear polarizing layer 22 in greater detail in A of FIG. 14. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the substrate 20. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the intermediate layer 15 and the quarter wave retardation layer 21, and the second metal layer 14 is formed between the substrate 20 and the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

The quarter-wave retardation layer 21 is formed on the linear polarization layer 22. The quarter-wave retardation layer 21 may be formed by obliquely depositing an inorganic material. In this case, fine columns may extend in the oblique direction on the surface of the quarter-wave retardation layer 21. These columns become the direction of crystal growth. When the inorganic material is deposited, the inorganic material grows in a cylindrical shape. Therefore, in the case of oblique deposition, the cylindrical shape is inclined at a predetermined angle with respect to the horizontal direction. As a result, the birefringence characteristic is imparted to the quarter-wave retardation layer 21. The inorganic material capable of forming the quarter-wave retardation layer 21 may be variously applied to TiO 2, TaOx, etc., and may be formed of CaO or BaO to impart moisture absorption to the quarter-wave retardation layer 21. Can be.

The organic light emitting element 30 is formed on the quarter-wave retardation layer 21. In the stacking order of the linear polarization layer 22 and the quarter-wave retardation layer 21, the linear polarization layer 22 is disposed close to the incidence direction of external light and the quarter-wave retardation layer 21 is disposed therein. . Another light transmissive member may be interposed between the linear polarizing layer 22 and the quarter-wave retardation layer 21.

The organic light emitting device 30 includes a first electrode 31, a second electrode 33, and an organic light emitting layer 32 that face each other. The first electrode 31 may be formed of a conductive material of a transparent material, and may include ITO, IZO, In ₂ O ₃ And ZnO or the like, and can be formed in a predetermined pattern by a photolithography method. In the case of the passive matrix type PM, the pattern of the first electrode 31 may be formed as lines on the stripe spaced apart from each other, and in the case of the active matrix type AM, the pixel may be formed. It may be formed in the form corresponding to the.

The second electrode 33 is disposed above the first electrode 31. The second electrode 33 may be a reflective electrode. The second electrode 33 may be formed of aluminum, silver, and / or calcium, and an external terminal (not shown). It can act as a cathode by connecting to. In the case of the passive driving type, the second electrode 33 may have a stripe shape orthogonal to the pattern of the first electrode 31, and in the case of the active driving type, the second electrode 33 may be formed over the entire active area in which the image is implemented. The polarity of the first electrode 31 and the polarity of the second electrode 33 may be opposite to each other.

The organic light emitting layer 32 interposed between the first electrode 31 and the second electrode 33 emits light by electric driving of the first electrode 31 and the second electrode 33. The organic light emitting layer 32 may use a low molecular weight or a high molecular organic material. When the organic light emitting layer 32 is formed of a low molecular organic material, a hole transport layer, a hole injection layer, etc. are stacked in the direction of the first electrode 31 around the organic light emitting layer 32, and the electron transport layer is directed in the direction of the second electrode 33. And an electron injection layer and the like. In addition, various layers may be stacked as needed. Organic materials that can be used are copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (triq-8-hydroxyquinoline aluminum) (Alq3) and the like can be variously applied.

Meanwhile, in the case of the polymer organic layer formed of the polymer organic material, only the hole transport layer (HTL) may be included in the direction of the first electrode 31 with respect to the organic emission layer 32. The polymer hole transport layer may include polyethylene dihydroxythiophene (PEDOT: poly- (2,4) -ethylene-dihydroxy thiophene), polyaniline (PANI), or the like by ink jet printing or spin coating. It is formed on the electrode 31, the polymer organic light emitting layer 32 may be PPV, Soluble PPV's, Cyano-PPV, polyfluorene (Polyfluorene) and the like, such as inkjet printing, spin coating or thermal transfer method using a laser The color pattern can be formed by a conventional method.

In an embodiment of the present invention, the light emitted from the organic light emitting element 30 is emitted in the direction of the substrate 20 as shown in FIG. 14, and the user of the organic light emitting display device is shown below the substrate 20. The image can be observed from the outside of the lower side. In such a bottom emission type structure, external light such as sunlight may be introduced through the substrate 20 to reduce contrast.

However, according to the present invention, the linear polarization layer 22 and the quarter-wave retardation layer 21 form a circular polarization layer to minimize reflection of external light. The external light incident from the lower side of the substrate 20 is absorbed by components in the direction along the absorption axis of the linear polarizing layer 22 and transmits components in the direction along the transmission axis. The component in the direction along this transmission axis is converted into circularly polarized light which is rotated in one direction while passing through the quarter-wave retardation layer 21. Circularly polarized light is reflected by the second electrode 33 of the organic light emitting element 30. When reflected, the circularly polarized light rotating in one direction becomes circularly polarized light rotating in the other direction, and is converted into linearly polarized light in the direction orthogonal to the initial transmission axis while passing through the quarter-wave retardation layer 21. The linearly polarized light is absorbed by the absorption axis of the linear polarization layer 22 so that the linearly polarized light does not come out of the lower side of the substrate 20. Therefore, it is possible to obtain an effect of minimizing external light reflection and further improving contrast.

Furthermore, the linear polarizing layer 22 of the present invention includes a plurality of grids 12. When the external light incident through the substrate 20 reaches the linear polarization layer 22, the destructive interference of external light reflected by the grid 12 having the first and second metal layers 13 and 14 and the intermediate layer 15 is reflected. Increase the effect As a result, the reflection of external light is minimized, thereby increasing the contrast enhancement effect.

In addition, since the linear polarization layer 22 and the quarter-wave retardation layer 21 are directly formed on the substrate 20, an organic light emitting display device having a reduced thickness without the need for an adhesive layer and the like may be implemented. Since it does not pass through this adhesive layer, brightness rises.

The linear polarization layer 22 and the quarter wave retardation layer 21 may be formed in various ways. Such a structure can be modified in consideration of the incident direction of external light not only in the case of the bottom emission type but also in the case of the top emission type.

16 is a cross-sectional view illustrating another example of a bottom emission organic light emitting display device according to an exemplary embodiment of the present invention. The linear polarization layer 22 is formed on one surface of the both surfaces of the substrate 20 facing outward, and the quarter wave retardation layer 21 is formed on the other surface. The organic light emitting element 30 is formed on the quarter-wave retardation layer 21. The detailed structure of the linear polarizing layer 22 is shown in detail in FIG. 17, which is an enlarged view of B of FIG. 16.

The linear polarization layer 22 includes a plurality of grids 12. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the substrate 20 and the intermediate layer 15, and the second metal layer 14 is formed on the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13. Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

18 is a cross-sectional view illustrating still another example of a bottom emission type organic light emitting diode display according to an exemplary embodiment. A quarter wave retardation layer 21 and a linear polarization layer 22 are sequentially formed on one surface of both surfaces of the substrate and the organic light emitting element 30 is formed on the other surface of the substrate 20. It is. Detailed description of each component is as described above.

The detailed structure of the linear polarizing layer 22 is shown in detail in FIG. 19, which is an enlarged view of C of FIG. 18. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on a surface of both sides of the quarter-wave retardation layer 21 that does not face the substrate 20. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the quarter wave retardation layer 21 and the intermediate layer 15, and the second metal layer 14 is formed on the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13. Therefore, the destructive interference effect of the external light reflected by the first metal layer 13 and the second metal layer 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

The above description is an example of a bottom emission type organic light emitting device in which an image is embodied in the direction of the substrate 20, but the present invention is not necessarily limited thereto, and the present invention is not limited to the direction of the substrate 20. In addition, the same may be applied to the top emission structure implemented toward the opposite direction of the substrate 20.

20 is a cross-sectional view illustrating an example of a top-emitting organic light emitting diode display according to another exemplary embodiment. The organic light emitting diode display may include a substrate 20, a reflective film 34 on the substrate 20, and an organic light emitting diode. 30, the sealing member 50 is included.

As described above, the transparent glass substrate 20 may be used as the substrate 20, but it is not necessary to be transparent. In addition, plastic or metal may be used to have flexible properties. At this time, an insulating film is further formed on the metal surface.

The reflective film 34 formed on one surface of the substrate 20 may be formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like. The first electrode 31 may be formed on the reflective film 34 of ITO, IZO, ZnO, In ₂ O ₃ , or the like having a high work function. The first electrode 31 functions as an anode, and if the first electrode 31 functions as a cathode, the first electrode 31 is formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir. , Cr, and a compound thereof can also be used as the reflective film 34. Hereinafter, an example in which the first electrode 31 functions as an anode will be described.

The second electrode 33 is formed of a transmissive electrode. It can be formed thin so as to be a semi-permeable film made of metal such as Li, Ca, LiF / Al, Al, Mg, Ag, etc., which have a small work function. Of course, by forming a transparent conductor such as ITO, IZO, ZnO, or In ₂ O ₃ on the metal semi-transmissive layer, it is possible to solve the problem of high resistance as the thickness becomes thin. The organic light emitting layer 32 formed between the first electrode 31 and the second electrode 33 is the same as described above.

The sealing member 50 which seals the organic light emitting element 30 is formed on the organic light emitting element 30. The sealing member 50 is formed to protect the organic light emitting device 30 from external moisture, oxygen, or the like, and the sealing member 50 is made of a transparent material. For this purpose, a glass substrate, a plastic substrate, or a plurality of overlapping structures of an organic material and an inorganic material may be used.

The 1/4 wavelength retardation layer 21 and the linear polarization layer 22 are sequentially formed on the upper surface of the sealing member 50, that is, the surface facing away from the organic light emitting element 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 21, which is an enlarged view of FIG. 20D. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on the surface of the quarter-wave retardation layer 21 that does not face the sealing member 50. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the quarter wave retardation layer 21 and the intermediate layer 15, and the second metal layer 14 is formed on the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

 According to the present exemplary embodiment, the external light incident from the direction in which the image is implemented, that is, the external light incident from the upper portion in FIG. 20 passes through the linear polarization layer 22 and the quarter-wave retardation layer 21 in order, and then reflects the film 34. When it is reflected off the surface, it cannot finally pass through the linear polarization layer 22. The principle is as described above.

22 is a cross-sectional view illustrating still another example of a top-emission organic light emitting diode display according to another exemplary embodiment of the present invention. The linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially formed on one surface of the sealing member 50 facing the organic light emitting element 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 23, which is an enlarged view of E in FIG. 22. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the sealing member 50 and the quarter wave retardation layer 21. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the quarter wave retardation layer 21 and the intermediate layer 15, and the second metal layer 14 is formed between the sealing member 50 and the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

24 is a cross-sectional view illustrating still another example of a top-emission organic light emitting diode display according to another exemplary embodiment of the present invention. The linear polarization layer 22 is formed on one surface of both surfaces of the sealing member 50 facing outwards, and the quarter-wave retardation layer 21 is formed on the other surface facing the organic light emitting device 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 25, which is an enlarged view of F in FIG. 24. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on the surface of the sealing member 50 not facing the organic light emitting element 30.

The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed on the sealing member 50 and the second metal layer 14 is formed on the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

26 is a cross-sectional view illustrating still another example of a top-emitting organic light emitting diode display according to another exemplary embodiment of the present invention. The reflective film 34 is formed on the substrate 20, the organic light emitting device 30 is formed on the reflective film 34, and the quarter-wave retardation layer 21 is formed on the organic light emitting device 30. The linear polarization layer 22 is formed on the quarter wavelength retardation layer 21. The structure of the linear polarizing layer 22 is shown in detail in FIG. 27, which is an enlarged view of FIG. A plurality of grids 12 are formed on the quarter-wave retardation layer 21.

The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on the opposite side of the side of the quarter-wave retardation layer 21 facing the second electrode 33. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed on the quarter wave retardation layer 21 and the second metal layer 14 is formed on the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

In this case, a protective layer may be formed between the second electrode 33 layer and the quarter-wave retardation layer 21. Referring to FIG. 28, a protective layer 40 is formed between the second electrode 33 and the quarter-wave retardation layer 21 of the organic light emitting element 30. Since the structure of FIG. 28 is the same as that of FIG. 26 except for the protective layer 40, only the protective layer 40 will be described.

The protective layer 40 is formed to prevent the second electrode 33 layer from being damaged during the process when the quarter-wave retardation layer 21 is formed. The protective layer 40 is formed of an inorganic material or an organic material. As the inorganic material, metal oxide, metal nitride, metal carbide, metal oxynitride, and compounds thereof may be used. As the metal oxides, silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, and compounds thereof may be used. Aluminum nitride, silicon nitride, and compounds thereof may be used as the metal nitride. Silicon carbide may be used as the metal carbide, and silicon oxynitride may be used as the metal oxynitride. In addition to the inorganic material, silicon may be used, and ceramic derivatives of silicon and metal may be used. In addition, diamond-like carbon (DLC) may be used. Organic materials may include organic polymers, inorganic polymers, organometallic polymers, and hybrid organic / inorganic polymers. Can be used. Detailed structures and effects will be omitted as described above.

29 is a view illustrating another example of a top emission organic light emitting device according to another embodiment of the present invention. The example in which the quarter-wave retardation layer 21 and the linear polarization layer 22 are formed between the reflective film 34 and the organic light emitting element 30 is shown. The structure of the linear polarizing layer 22 is shown in detail in FIG. 30, which is an enlarged view of FIG. A plurality of grids 12 are formed on the quarter-wave retardation layer 21.

The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the first electrode 31. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the quarter wavelength retardation layer 21 and the intermediate layer 15, and the second metal layer 14 is formed between the intermediate layer 15 and the first electrode 31.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

Although not shown, the quarter wavelength retardation layer 21 is formed on the upper surface of the reflective film 34, and the organic light emitting element 30 is formed on the quarter wavelength retardation layer 21. The linear polarizing layer 22 may be formed in the above.

FIG. 31 is a schematic cross-sectional view illustrating an example of a passive emission type bottom emission type organic light emitting diode display according to another exemplary embodiment of the present invention. In the organic light emitting diode display of FIG. 31, the linear polarization layer 22 and the quarter-wave phase retardation layer 21 are sequentially formed on the upper surface of the substrate 20. The light emitting element 30 is formed. The detailed structure of the linear polarizing layer 22 is shown in detail in FIG. 32 which is an enlarged view of I of FIG. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the substrate 20. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the quarter wave retardation layer 21 and the intermediate layer 15, and the second metal layer 14 is formed between the substrate 20 and the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

The first electrode 31 is formed in a predetermined stripe pattern on the quarter-wave retardation layer 21, and the internal insulating film 35 is formed on the first electrode 31 so as to partition it. On the internal insulating film 35, a separator 36 formed to be orthogonal to the first electrode 31 is formed for patterning the organic light emitting layer 32 and the second electrode 33. By this separator 36, the organic light emitting layer 32 and the second electrode 33 are patterned to intersect the first electrode 31. A sealing member (not shown) is disposed on the second electrode 33 to block the organic light emitting element 30 from the outside air. In some cases, the organic light emitting layer 32 and the second electrode 33 may be patterned without the separator 36.

In the case of the embodiment according to FIG. 31, the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially stacked on the substrate 20 as in the above-described embodiments. At this time, the linear polarization layer 22 and the quarter-wave retardation layer 21 can block the reflection of external light introduced from the lower direction of the substrate 20 and the overall display thickness can be reduced. In addition, the interface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12, the external light is absorbed to prevent the reflection of the external light.

Although not illustrated in a separate drawing, the same structure as that of FIGS. 16 and 18 may be applied to the bottom emission type passive driving display device.

33 is a schematic cross-sectional view illustrating an example of a bottom emission type organic light emitting diode display of an active driving method according to still another embodiment of the present invention.

Referring to FIG. 33, a thin film transistor TFT is formed on an upper surface of the substrate 20. At least one thin film transistor TFT is formed for each pixel, and is electrically connected to the organic light emitting element 30.

Specifically, the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially formed on the substrate 20. The structure of the linear polarizing layer 22 is shown in detail in FIG. 25, which is an enlarged view of FIG. 33J. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the substrate 20. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the quarter wave retardation layer 21 and the intermediate layer 15, and the second metal layer 14 is formed between the substrate 20 and the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

The buffer layer 41 is formed on the 1/4 wavelength retardation layer 21, and the semiconductor layer 42 of a predetermined pattern is formed on the buffer layer 41. A gate insulating film 43 formed of SiO 2, SiN x, or the like is formed on the semiconductor layer 42, and a gate electrode 44 is formed in a predetermined region on the gate insulating film 43. The gate electrode 44 is connected to a gate line (not shown) for applying a TFT on / off signal. An interlayer insulating layer 45 is formed on the gate electrode 44, and the source electrode 46 and the drain electrode 47 are formed to contact the source and drain regions of the semiconductor layer 42 through contact holes, respectively. . The TFT thus formed is covered with the passivation film 48 and protected.

A first electrode 31 serving as an anode electrode is formed on the passivation layer 48, and a pixel define layer 49 is formed of an insulating material to cover the first electrode 31. After the predetermined opening is formed in the pixel defining layer 49, the organic light emitting layer 32 is formed in the region defined by the opening. The second electrode 33 is formed to cover all the pixels.

Also in the active drive type structure, since the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially stacked on the substrate 20, as seen in FIG. The linear polarization layer 22 and the quarter-wave retardation layer 21 can block the reflection of the introduced external light.

In such an active driving type bottom emission type organic light emitting display device, the linear polarization layer 22 and the quarter-wave retardation layer 21 are arranged in a direction in which the linear polarization layer 22 is directed toward external light. As long as the four-wavelength retardation layer 21 is disposed in the direction toward the organic light emitting element 30, it may be formed on any surface formed by the substrate 20, the thin film transistor TFT and the organic light emitting element 30. That is, although not shown in a separate drawing, after forming the 1/4 wavelength retardation layer 21 and the linear polarization layer 22 on one surface and / or the other surface of the substrate 20 as shown in FIGS. 16 and 18. The thin film transistor TFT and the organic light emitting element 30 may be formed thereon, and the quarter-wave retardation layer 21 and / or the linear polarization layer 22 may be formed as each layer of the thin film transistor TFT. It can also arrange | position between the interfaces which become.

Instead of forming the passivation film 48 of FIG. 33, the linear polarization layer 22 and the quarter-wave retardation layer 21 may replace the role. Referring to FIG. 35, a separate passivation film 48 is not formed of an organic material and / or an inorganic material over the TFT, and the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially interlayer insulating film 45. It is formed on the surface and replaces the passivation film 48. Hereinafter, other detailed structures and effects are the same as described above, and thus will be omitted.

FIG. 36 is a schematic cross-sectional view illustrating an example of a passive emission type top-emitting organic light emitting diode display according to another exemplary embodiment of the present invention.

The reflective film 34 is formed on the upper surface of the substrate 20, and the 1/4 wavelength retardation layer 21 and the linear polarizing layer 22 are sequentially formed on the upper surface of the reflective film 34, and the linear polarizing layer 22 is formed. The organic light emitting element 30 is formed on the ().

The structure of the linear polarizing layer 22 is shown in detail in FIG. 37, which is an enlarged view of FIG. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the first electrode 31. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the quarter wave retardation layer 21 and the intermediate layer 15, and the second metal layer 14 is formed between the first electrode 31 and the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

The first electrode 31 is formed in a predetermined stripe pattern on the linear polarizing layer 22, and the internal insulating layer 35 is formed on the first electrode 31 to partition it. On the internal insulating film 35, a separator 36 formed to be orthogonal to the first electrode 31 is formed for patterning the organic light emitting layer 32 and the second electrode 33. By the separator 36, the organic light emitting layer 32 and the second electrode 33 are patterned to intersect the first electrode 31. A sealing member (not shown) is formed on the second electrode 33 to block the organic light emitting element 30 from the outside air. In some cases, the organic emission layer 32 and the second electrode 33 may be patterned without the separator 36.

Even in this embodiment, the external light flowing from the outside is not reflected, so that the contrast can be improved and the overall display thickness can be reduced. Detailed structures and effects are the same as described above and will be omitted.

Although not illustrated in a separate drawing, the structure shown in FIGS. 20 to 28 may be applied as it is to the front emission type passive driving display device.

38 is a schematic cross-sectional view illustrating an example of an active driving type top emission type organic light emitting diode display according to another exemplary embodiment of the present invention.

Referring to FIG. 38, a thin film transistor TFT is formed on an upper surface of the substrate 20. At least one thin film transistor TFT is formed for each pixel, and is electrically connected to the organic light emitting element 30. Since the structure of the thin film transistor TFT is the same as in FIG. 33 described above, a detailed description thereof will be omitted.

The passivation film 48 is formed on the thin film transistor TFT so as to cover the thin film transistor TFT, and the reflective film 34 is formed on the passivation film 48. The first electrode 31 serving as the anode electrode is formed on the reflective film 34, and the pixel defining layer 49 is formed of an insulator to cover the first electrode 31. After the predetermined opening is formed in the pixel defining layer 49, the organic light emitting layer 32 is formed in the region defined by the opening. The second electrode 33 is formed to cover all the pixels.

In the embodiment of FIG. 38, the linear polarizing layer 22 and the quarter-wave retardation layer 21 are sequentially formed on one surface of the sealing member 50 facing the organic light emitting element 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 39, which is an enlarged view of L in FIG. 38. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the sealing member 50. The grid 12 includes first and second metal layers 13 and 14 and an intermediate layer 15. The first metal layer 13 is formed between the quarter wave retardation layer 21 and the intermediate layer 15, and the second metal layer 14 is formed between the sealing member 50 and the intermediate layer 15.

The grid 12 is formed so that external light reflected by the first metal layer 13 and the second metal layer 14 cancels each other, and the second metal layer 14 disposed close to the external light so that the amplitude of the reflected external light is the same. Is formed to be smaller than the reflectance of the first metal layer 13.

Therefore, the destructive interference effect of the external lights reflected by the first and second metal layers 13 and 14 is increased to prevent the reflection of the external light when the external light is incident on the grid 12 toward the substrate 20. As a result, contrast can be improved. Detailed structures, effects, and the like of the grid 12 are the same as the embodiments described with reference to FIGS.

38, the linear polarization layer 22 and the quarter-wave retardation layer 21 may block reflection of external light incident from the upper side of the sealing member 50 in the upper direction of the drawing. The grid 12 also enhances the destructive interference effect of the reflected external light. As a result, the reflection of external light can be prevented to improve the contrast. Although not illustrated in a separate drawing, the structure shown in FIGS. 20 to 30 may be applied to the top emission type active driving display device as it is.

The present invention as described above is not limited to the organic light emitting display device, and can be applied to any other flat panel display device using an inorganic light emitting device, an LCD, an electron emitting device, or the like as the light emitting device.

Claims (21)

Base; And A grid having a first metal layer formed on one surface of the base, a second metal layer formed on the first metal layer, and an intermediate layer disposed between the first metal layer and the second metal layer, The metal layer positioned closer to the external light among the first metal layer and the second metal layer may be a semi-transmissive layer that reflects a part of incident light and transmits a part thereof, and has a lower external light reflectance than the remaining metal layer. According to claim 1, The intermediate layer is any one selected from the group consisting of SiO x (x ≧ 1), SiN x (x ≧ 1), MgF 2, CaF 2, Al 2 O 3, SnO 2, indium tin oxide (ITO), indium zinc oxide (IZO), ZnO and In 2 O 3. Including polarizer. According to claim 1, And the first metal layer is chromium and the second metal layer is aluminum. According to claim 1, The first metal layer, the second metal layer, and the intermediate layer are polarizers formed such that external light incident on the grid interferes with each other. According to claim 1, The first metal layer, the second metal layer and the intermediate layer is a polarizer stacked in the same pattern. According to claim 1, The grid is patterned in a stripe form spaced at predetermined intervals. Board; An organic light emitting element formed on the substrate to implement an image; A sealing member formed on the organic light emitting element; A quarter-wave retardation layer formed on one of the surfaces formed by the substrate, the organic light emitting element, and the sealing member; And A linear polarization layer formed on the other side of the surfaces formed by the substrate, the organic light emitting element, the sealing member, and the quarter-wave retardation layer, and positioned closer to the direction in which the image is realized than the quarter-wave retardation layer. Including, The linear polarizing layer includes a grid having a first metal layer, a second metal layer formed on the first metal layer, and an intermediate layer disposed between the first metal layer and the second metal layer, wherein the first metal layer and the second metal layer An organic light emitting display device, wherein a metal layer positioned closer to external light has a semi-transmissive layer that reflects part of incident light and partially transmits light, and has a lower external light reflectance than the remaining metal layer. The method of claim 7, wherein The image is embodied in the direction of the substrate, And the linear polarization layer is formed on the substrate, the quarter wavelength retardation layer is formed on the linear polarization layer, and the organic light emitting element is formed on the quarter wavelength retardation layer. The method of claim 7, wherein The image is embodied in the direction of the substrate, The quarter-wave retardation layer is formed on the substrate, the organic light emitting element is formed on the quarter-wave retardation layer, and the linear polarization layer has the quarter-wave retardation layer formed on both sides of the substrate. An organic light emitting display device formed on an opposite side of a surface. The method of claim 7, wherein The image is embodied in the direction of the substrate, And the quarter-wave retardation layer and the linear polarization layer are sequentially formed on opposite surfaces of both surfaces of the substrate on which the organic light emitting element is formed. The method of claim 7, wherein The image is embodied in the direction of the sealing member, And the quarter-wave retardation layer is formed on the organic light emitting element, and the linear polarization layer is formed on the quarter-wave retardation layer. The method of claim 11, wherein And a passivation layer between the organic light emitting element and the quarter-wave retardation layer. The method of claim 7, wherein The image is embodied in the direction of the sealing member, And the quarter-wave retardation layer and the linear polarization layer are sequentially formed on opposite surfaces of the sealing member on which the organic light emitting element is formed. The method of claim 7, wherein The image is embodied in the direction of the sealing member, The quarter-wave retardation layer is formed on the surface of the sealing member facing the organic light emitting element, and the linear polarization layer is formed on the opposite side of the surface on which the quarter-wave retardation layer is formed among the both sides of the sealing member. OLED display. The method of claim 7, wherein The image is embodied in the direction of the sealing member, And the linear polarization layer is formed on the surface of the sealing member facing the organic light emitting element, and the quarter-wave retardation layer is formed on the surface of the linear polarization layer facing the organic light emitting element. The method of claim 7, wherein The image is embodied in the direction of the sealing member, And a reflective film interposed between the substrate and the organic light emitting device, wherein the quarter-wave retardation layer is formed between the reflective film and the organic light emitting device, and the linear polarizing layer is formed on the organic light emitting device. OLED display. The method according to any one of claims 7 to 16, The intermediate layer includes any one selected from the group consisting of SiO x (x ≧ 1), SiNx (x ≧ 1), MgF 2, CaF 2, Al 2 O 3, and SnO 2. The method according to any one of claims 7 to 16, The first metal layer is chromium, and the second metal layer is aluminum. The method according to any one of claims 7 to 16, The first metal layer, the second metal layer, and the intermediate layer are formed such that external light incident on the grid interferes with each other. The method according to any one of claims 7 to 16, The first metal layer, the second metal layer, and the intermediate layer are stacked in the same pattern. The method according to any one of claims 7 to 16, An organic light emitting display device in which the grid is patterned in a stripe form at a predetermined interval.