KR20090073892A - Organic electroluminescent device and method for fabricating the same - Google Patents

Abstract

An organic electroluminescent device and a manufacturing method thereof are provided to implement the desired brightness of an OLED(Organic Light Emitting Diode) by minimizing the resistance of a ground line. A plurality of pixels are defined on a substrate(101). A switching thin film transistor is formed in a cross region of a gate line and a data line(103) of each pixel. The switching thin film transistor includes a gate electrode, a source electrode, and a drain electrode. A driving thin film transistor is formed on the substrate to be connected to the switching thin film transistor. The driving thin film transistor includes the gate electrode, the source electrode and the drain electrode. A first electrode(106) is connected to the source electrode of the driving thin film transistor. The light emitting layer is formed on the first electrode. The second electrode is formed on the light emitting layer. A ground line(107) is connected to the drain electrode of the driving thin film transistor. A first layer of the ground line is formed on the same layer as the first electrode and is made of the same material as the first electrode.

Description

Organic electroluminescent device and its manufacturing method {ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME}

The present invention relates to an organic light emitting display device and a method for manufacturing the same, and to an organic light emitting display device and a method for manufacturing the same, wherein a ground line having a minimum resistance is provided and a minimum number of masks are applied during manufacturing.

In today's information society, the role of electronic display devices has become very important, and various electronic display devices have been widely used in industrial fields and life.

Such electronic display devices are mainly used for televisions and computer monitors, and the cathode ray tube (CRT) display device, which has the longest history, occupies a high market share, but such as heavy weight, large volume and high power consumption. It has a lot of disadvantages.

Therefore, in recent years, as a new electronic display device, a flat panel display device such as an organic light emitting display device and a liquid crystal display device has been developed as a new electronic display device due to the rapid development of semiconductor technology. It attracts a lot of attention.

Recently, in addition to the advantages such as light weight, thinness, etc., research on organic electroluminescent devices that are advantageous in terms of power consumption has been actively made due to the advantage of not requiring a backlight.

Hereinafter, with reference to the accompanying drawings will be described a conventional general organic electroluminescent device as follows.

1 is a circuit diagram illustrating a pixel structure of a conventional organic light emitting display device.

As shown in FIG. 1, the conventional organic electroluminescent device has a gate line 2 and a data line 3 defining a plurality of pixels by crossing each other longitudinally and horizontally.

A switching thin film transistor 4 is formed in an area where the gate line 2 and the data line 3 of each pixel cross each other, and a gate electrode of the switching thin film transistor 4 is connected to the gate line 2 and a source is provided. The electrode is connected to the data line 3.

Each pixel includes a driving thin film transistor 5 connected to the drain electrode of the switching thin film transistor 4, a storage capacitor Cst, and an organic light emitting diode connected to the driving thin film transistor 5. (9) is formed. Here, the drain electrode (see 5c of FIG. 2) of the driving thin film transistor 5 is connected to the ground line 7.

Although not illustrated, the organic light emitting diode 9 may include a first electrode 6 connected to the source electrode 5b of the driving thin film transistor 5, and a light emitting layer formed on the first electrode 6 (not shown). C) and a second electrode (not shown) formed on the light emitting layer, the second electrode being connected to a power line Vdd.

The organic light emitting diode 9 having the above structure and formed in each pixel emits one of red, green, and blue light, and the organic light emitting diode 9 emitting red, green, and blue is one unit. To implement the image.

FIG. 2 is a view illustrating a part of a conventional general organic light emitting display device, and illustrates only the first electrode 6 and the ground line 7 of the driving thin film transistor 5 and the organic light emitting diode 9. It was.

Referring to FIG. 2, the driving thin film transistor 5 includes a semiconductor layer 5d including an active layer 5d1 and an ohmic contact layer 5d2, a source electrode 5b formed on the semiconductor layer 5d, and A drain electrode 5c, a gate insulating film 30 formed on the source electrode 5c and the drain electrode 5c, a gate electrode 5a formed on the gate insulating film 30, and the gate electrode 5a. It consists of the protective film 40 formed on it. In addition, a first electrode 6 connected to the source electrode 5b of the driving thin film transistor 5 is formed on the passivation layer 40 through a contact hole formed in the gate insulating layer 30 and the passivation layer 40. Here, the first electrode 6 is a component constituting the organic light emitting diode 9 as mentioned above.

As shown in FIG. 2, a ground line 7 formed of metal is formed on the passivation layer 40, and the ground line 7 is formed to be connected to each other to form a mesh structure. As a result, stable driving of the driving thin film transistor 5 was achieved.

In order to minimize the number of masks in the manufacturing process, the ground line 7 may be formed of indium tin oxide (ITO) at the same time as the first electrode 6. In this case, the resistance of the ground line 7 may be reduced. Since the charge is accumulated in the ground line 7, the potential difference between the source electrode 5b and the drain electrode 5c of the driving thin film transistor 5 is lowered, so that a current lower than the desired current flows into the organic light emitting diode 9. As a result, the organic light emitting diode 9 emits light at a brightness different from that of the desired brightness, resulting in a screen defect.

The present invention is to solve the above problems, an object of the present invention is to provide an organic light emitting device and a method of manufacturing the same is provided with a minimum number of masks at the same time the ground line is provided with a minimum resistance. .

According to an exemplary embodiment of the present invention, an organic light emitting display device includes: a substrate in which a plurality of pixels are defined by crossing a gate line and a data line; A switching thin film transistor formed at an area where the gate line and the data line of each pixel of the substrate cross each other and having a gate electrode, a source electrode, and a drain electrode; A driving thin film transistor formed on a substrate to be connected to the switching thin film transistor and having a gate electrode, a source electrode, and a drain electrode; A first electrode provided separately for each pixel and connected to a source electrode of a driving thin film transistor; A light emitting layer disposed on each of the pixels and formed on the first electrode; A second electrode formed on the light emitting layer; A ground line connected to the drain electrode of the driving thin film transistor and formed of a plurality of layers including a first layer formed of the same layer as the first electrode; It is configured to include.

In addition, a method of manufacturing an organic light emitting display device according to a preferred embodiment of the present invention for achieving the above object comprises the steps of preparing a substrate; Forming a buffer layer and a semiconductor layer on the substrate, forming a source electrode and a drain electrode overlapping a portion of the semiconductor layer, and forming a data line; Forming a gate insulating film on the entire substrate on which the source electrode, the drain electrode, and the data line are formed; Forming a gate electrode and a gate line on the gate insulating film; Forming a passivation layer on the gate electrode; Removing a portion of the passivation layer and the gate insulating layer to form a first contact hole exposing a portion of the drain electrode to the outside; Forming a first electrode connected to a source electrode through the first contact hole, a first layer of a ground line connected to the drain electrode, and a second layer of a ground line overlapping the first layer; Forming a second electrode on the light emitting layer; It is made, including.

The organic light emitting diode having the above-described configuration and manufacturing method minimizes the resistance of the ground line and minimizes the amount of charge accumulated in the ground line, so that the driving thin film transistor is normally driven so that the brightness of the light emitted by the organic light emitting diode is increased. It has the advantage of driving close to the desired brightness.

In addition, the organic light emitting display device having the above-described configuration and manufacturing method has an advantage of minimizing the number of masks applied during the manufacturing process, thereby increasing the production yield and lowering the manufacturing cost.

Hereinafter, an organic light emitting display device and a method of manufacturing the same according to preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, the configuration of the organic light emitting display device according to the preferred embodiment of the present invention will be described with reference to FIGS. 3 to 5.

3 to 5, an organic light emitting display device according to an exemplary embodiment of the present invention includes a substrate 101 in which a plurality of pixels are defined by the gate line 102 and the data line 103 crossing each other; A switching thin film formed in an area where the gate line 102 and the data line 103 of each pixel of the substrate 101 intersect, and includes a gate electrode 104a, a source electrode 104b, and a drain electrode 104c. Transistor 104; A driving thin film transistor 105 formed on the substrate 101 to be connected to the switching thin film transistor 104 and having a gate electrode 105a, a source electrode 105b, and a drain electrode 105c; A first electrode 106 provided separately for each pixel and connected to the source electrode 105b of the driving thin film transistor 105; A light emitting layer (not shown) provided separately for each pixel and formed on the first electrode 106; A second electrode (not shown) formed on the light emitting layer; A ground line 107 connected to the drain electrode 105c of the driving thin film transistor 105 and formed of a plurality of layers including a first layer 107a formed on the same layer and made of the same material as the first electrode 106. ; It is configured to include.

Each component of the organic light emitting device according to the preferred embodiment of the present invention having such a configuration will be described in detail as follows.

3 and 4, a plurality of pixels are defined on the substrate 101 such that the gate line 102 and the data line 103 cross each other vertically and horizontally.

In each pixel of the substrate 101, a switching thin film transistor 104 is formed in an area where the gate line 102 and the data line 103 cross each other, and the driving thin film transistor 105 connected to the switching thin film transistor 104 is formed. Is formed.

The switching thin film transistor 104 includes a semiconductor layer 104d including an active layer and an ohmic contact layer, a source electrode 104b and a drain electrode 104c formed on the semiconductor layer 104d, and the source electrode ( 104b and a gate insulating film 130 formed on the drain electrode 104c, a gate electrode 104a formed on the gate insulating film 130, and a protective film 140 formed on the gate electrode 104a. It is composed. The gate electrode 104a of the switching thin film transistor 104 is connected to the gate line 102 and the source electrode 104b is connected to the data line 103.

As shown in FIG. 4, the driving thin film transistor 105 includes a semiconductor layer 105d including an active layer 105d1 and an ohmic contact layer 105d2, and a source electrode 105b formed on the semiconductor layer 105d. ) And a drain electrode 105c, a gate insulating film 130 formed on the source electrode 105b and a drain electrode 105c, a gate electrode 105a formed on the gate insulating film 130, and the gate electrode. And a passivation layer 140 formed on the 105a, and a first contact hole 110a exposing the source electrode 105b is formed in the gate insulating layer 130 and the passivation layer 140. The gate electrode 105a of the driving thin film transistor 105 is connected to the drain electrode 104c of the switching thin film transistor 104, and the source electrode 105b is connected to the first electrode 106 and the drain electrode 105c. ) Is connected to the ground line 107.

In order to connect the gate electrode 105a of the driving thin film transistor 105 and the drain electrode 104c of the switching thin film transistor 104, a second contact hole 110b is formed in the passivation layer 140 to form a driving thin film. After exposing the gate electrode 105a of the transistor 105 and forming a third contact hole 110c in the gate insulating layer 130 and the passivation layer 140 to expose the drain electrode 104c of the switching thin film transistor 104. The drain electrode 104c of the switching thin film transistor 104 is connected to the gate electrode 105a of the driving thin film transistor 105 through the second contact hole 110b and the third contact hole 110c on the passivation layer 140. And a connecting portion 111 to be connected. Here, the connecting portion 111 is formed of the same material at the same time as the second layer 107b of the ground line 107, as shown in Figure 4, a detailed description of the ground line 107 below Shall be.

Referring to FIG. 4, the first electrode 106 is formed on the passivation layer 140 and is connected to the source electrode 105b of the driving thin film transistor 105 through the first contact hole 110a.

Although not shown in detail in the drawing, a light emitting layer (not shown) formed separately for each pixel is formed on the first electrode 106, and a second electrode (not shown) connected to a power line Vdd and used as a common electrode on the light emitting layer. Is formed to form the organic light emitting diode 109. Here, the first electrode 106 is formed of a transparent conductive material, whereby the organic light emitting diode 109 forms a bottom emission structure. One example of the transparent conductive material is indium tin oxide (ITO).

In the present invention, although the first electrode 106 of the organic light emitting diode 109 is made of a transparent conductive material to form a lower light emitting structure as an example, the present invention is not limited thereto, and the organic field The light emitting diode 109 may have various examples such as forming a top emission structure.

4 and 5, the ground line 107 connected to the drain electrode 105c of the driving thin film transistor 105 is formed on the same layer of a transparent conductive material that is the same material as the first electrode 106. It comprises a first layer 107a and a second layer 107b formed of an opaque metal.

The plurality of pixels defined on the substrate 101 form a vertical pixel column in units of one vertical line, and in this case, the ground line 107 has a predetermined distance from the data line 103 for each vertical pixel column. They are formed side by side and connected to each of the drain electrodes 105c of the plurality of driving thin film transistors 105 in the corresponding vertical pixel line through the auxiliary ground line (refer to 108 of FIG. 4).

As described above, the first layer 107a of the ground line 107 is formed of the same transparent conductive material as the material of the first electrode 107a. For example, indium tin oxide (ITO) is used. In addition, as mentioned above, the second layer 107b of the ground line 107 is formed of an opaque metal. For example, aluminum (Al), molybdenum (Mo), tungsten (W), and copper (Cu) may be formed. have.

As described above, the second layer 107b of the ground line 107 connects the gate electrode 105a of the driving thin film transistor 105 and the drain electrode 104c of the switching thin film transistor 104. It is formed in the same layer of the same material as the connecting portion 111 which is a means for. That is, the connecting portion 111 is also formed of any one of the same material as the material forming the second electrode (107b) of aluminum (Al), molybdenum (Mo), tungsten (W), copper (Cu).

Referring to FIG. 4, the substrate 101 is formed to be parallel to the gate line 102 at a predetermined interval, and is connected to the ground line 107 through the fourth contact hole 110d and the fifth contact hole ( An auxiliary ground line 108 connected to the drain electrode 105c of the driving thin film transistor 105 is formed through 110e, and the auxiliary ground line 108 may include a gate electrode 105a and a gate electrode of the driving thin film transistor 105. The same material is formed on the same layer as the gate electrode 105a of the switching thin film transistor 104.

The auxiliary ground line 108 is connected to the ground line 107 through the fourth contact hole 110d to form a mesh structure together with the ground line 107 and forms the fifth contact hole 110e. The ground line 107 may be connected to the drain electrode 105c of the driving thin film transistor 105 by being connected to the drain electrode 105c of the driving thin film transistor 105.

The auxiliary ground line 108 overlaps a portion of the region extending from the drain electrode 104c of the switching thin film transistor 104 to form a storage capacitor Cst.

Ground line 107 provided in the organic light emitting device according to a preferred embodiment of the present invention having the structure as described above, such as aluminum (Al), molybdenum (Mo), tungsten (W), copper (Cu) Since the resistance is minimized by including the second layer 107b made of metal, the amount of charge accumulated in the ground line 107 is minimized, so that the driving thin film transistor 105 is normally driven. The brightness of the light emitted by 109 can be driven to be close to the desired brightness, thereby improving the quality of the screen.

Hereinafter, a method of manufacturing an organic light emitting display device according to a preferred embodiment of the present invention will be described with reference to FIG. 4 including FIGS. 6A to 6J.

In describing the method of manufacturing the organic light emitting display device according to the preferred embodiment of the present invention, the semiconductor layer 104d, the source electrode 104b, the drain electrode 104c, and the gate electrode constituting the switching thin film transistor 104 may be described. Since each of the semiconductor layers 105d, the source electrodes 105b, the drain electrodes 104c, and the gate electrodes 104a constituting the driving thin film transistor 105 is simultaneously formed of the same material, the switching thin film transistor 104 is formed. The description about it will be omitted. Accordingly, the semiconductor layer 105d, the source electrode 105b, the drain electrode 105c, and the gate electrode 105a mentioned below are found to be components of the driving thin film transistor 105.

First, the substrate 101 is prepared.

Next, as shown in FIG. 6A, after the buffer layer 120 is formed on the substrate 101, a pattern 115d1 for forming an active layer and a pattern 115d2 for forming an ohmic contact layer are formed.

Next, as shown in FIG. 6B, a source electrode 105b and a drain electrode 105c overlapping with a portion of the semiconductor layer 105d are formed, and a data line 103 is formed. A portion of the pattern 115d and a portion of the pattern 115d2 for forming the ohmic contact layer are removed to complete the semiconductor layer 105d including the active layer 105d1 and the ohmic contact layer 105d2.

Next, as shown in FIG. 6C, a gate insulating film 130 is formed over the entire substrate 101 on which the source electrode 105b, the drain electrode 105c, and the data line 103 are formed, and the gate insulating film 130 is formed. ) And a gate electrode 105a and a gate line (see 102 in FIG. 4). In this case, the data line 103 and the gate line 102 formed in the previous step are formed to cross each other longitudinally and horizontally to define a plurality of pixels.

At the time of forming the gate electrode 105a and the gate line 102, the auxiliary ground line 108 is formed of the same material so as to be parallel to the gate line 102, and the auxiliary ground line 108 is formed in a subsequent step. Is connected to the ground line 107 to form a mesh (mesh) with the ground line 107.

Next, as shown in FIG. 6D, a passivation layer 140 is formed on the gate electrode 105a, and a portion of the passivation layer 140 and the gate insulating layer 130 are removed to form part of the source electrode 105b. The first contact hole (110a) for exposing the outside is formed and the fifth contact hole (see 110e in FIG. 4) for exposing a portion of the drain electrode 105c to the outside. A portion of the passivation layer 140 is removed to form a fourth contact hole (110d of FIG. 4) that exposes a portion of the auxiliary ground line 108 to the outside.

Next, as illustrated in FIG. 6E, the transparent conductive material layer 116, the metal layer 117, and the photoresist film are formed on the substrate 101 on which the first, fourth and fifth contact holes 110a, 110d, and 110e are formed. After forming 150 in sequence, photolithography is performed using the mask 160 having the diffractive region 160a to form the first photoresist pattern 150a as shown in FIG. 6F.

The transparent conductive material layer 116 is made of indium tin oxide (ITO), and the metal layer 117 is made of any one of aluminum (Al), molybdenum (Mo), tungsten (W), and copper (Cu). The diffraction region 160a of the mask 160 is provided in a region corresponding to a region where a first electrode (see 106 in FIG. 6G) is to be formed on the first substrate 101.

Next, the metal layer 117 is selectively removed using the first photoresist pattern 150a to form the metal pattern 117a as shown in FIG. 6G, and then the first photoresist pattern 150a is used. As a result, the transparent conductive material layer 116 is selectively removed to form a first layer 107a of the first electrode 106 and the ground line 107. In this case, the first layer 107a of the ground line 107 is connected to the auxiliary ground line 108 through the fourth contact hole 110d and is connected to the drain terminal 105c through the fifth contact hole 110e. Connected.

Here, the pixels defined by the intersection of the gate line 102 and the data line 103 on the substrate 101 form a vertical pixel column in units of vertical lines, and horizontal pixels in units of horizontal lines. In this case, the first layer 107a of the ground line 107 is formed to be parallel to the data line 103 at predetermined intervals in each vertical pixel column, and the auxiliary ground line 108 is formed. ) Is arranged for each horizontal pixel column.

Next, during photolithography using the mask 160 in which the diffraction region 160a is provided in the first photoresist pattern 150a, the photoresist was diffracted to correspond to the diffraction region 160a of the mask 160. The region is removed to form the second photosensitive film pattern 150b as shown in FIG. 6H.

Next, as illustrated in FIG. 6I, the metal pattern 117a is selectively removed using the second photoresist layer pattern 150b to overlap the first layer 107a of the ground line 107. The second layer 107b of 107 is formed. Like the first layer 107a mentioned above, the second layer 107b of the ground line 107 is formed one by one for each horizontal pixel column at a predetermined distance from the data line 103.

Next, as shown in FIG. 6J, the second photosensitive film pattern 105b is removed.

Next, a light emitting layer (not shown) is formed on the first electrode 106 and a second electrode (not shown) is formed on the light emitting layer, so that the organic material includes the first electrode 106, the light emitting layer, and the second electrode. An electroluminescent element (see 109 in FIG. 4) is provided.

The organic electroluminescent device according to the preferred embodiment of the present invention uses a mask 160 provided with a diffraction region 160a when the ground line 107 formed of the first layer 107a and the second layer 107b is formed. By performing the photolithography process, the number of masks applied in the manufacturing process is minimized, so that the production yield is improved and the manufacturing cost is low.

1 is a circuit diagram showing a pixel structure of a conventional organic electroluminescent device.

FIG. 2 is a view showing a part of a conventional general organic light emitting display device, and is a sectional view showing only the driving thin film transistor, the first electrode of the organic light emitting diode, and a ground line; FIG.

3 is a circuit diagram illustrating a pixel structure of an organic light emitting display device according to an exemplary embodiment of the present invention.

4 is a plan view illustrating a part of the organic light emitting display device of FIG. 3.

FIG. 5 is a cross-sectional view taken along a line II ′ of FIG. 4. FIG.

6A through 6J are cross-sectional views illustrating a part of a process of manufacturing the organic light emitting display device of FIG. 4.

** Description of the symbols for the main parts of the drawings **

101: substrate

102 gate line 103 data line

104: switching thin film transistor 105: driving thin film transistor

106: first electrode

107: ground line 108: auxiliary ground line

130: gate insulating film 140: protective film

160: mask

Claims (18)

A substrate in which a plurality of pixels are defined by crossing a gate line and a data line with each other; A switching thin film transistor formed at an area where the gate line and the data line of each pixel of the substrate cross each other and having a gate electrode, a source electrode, and a drain electrode; A driving thin film transistor formed on a substrate to be connected to the switching thin film transistor and having a gate electrode, a source electrode, and a drain electrode; A first electrode provided separately for each pixel and connected to a source electrode of a driving thin film transistor; A light emitting layer disposed on each of the pixels and formed on the first electrode; A second electrode formed on the light emitting layer; A ground line connected to the drain electrode of the driving thin film transistor and formed of a plurality of layers including a first layer formed of the same layer as the first electrode; An organic light emitting display device, characterized in that configured to include. The organic light emitting device of claim 1, wherein the first layer of the first electrode and the ground line is formed of a transparent conductive material. The organic light emitting device of claim 2, wherein the first layer of the first electrode and the ground line is formed of indium tin oxide (ITO). The organic light emitting device of claim 1, wherein the ground line comprises a first layer formed of a transparent conductive material and a second layer formed of an opaque metal. The organic light emitting device of claim 4, wherein the second layer of the ground line is formed of any one selected from aluminum (Al), molybdenum (Mo), tungsten (W), and copper (Cu). The method of claim 1, wherein the pixels defined on the substrate form a plurality of vertical pixel columns. And one ground line provided for each vertical pixel column and connected to each drain electrode of the driving thin film transistor in the pixel forming the vertical pixel column. The method of claim 6, wherein each pixel comprises a plurality of horizontal pixel columns, And an auxiliary ground line connected to the ground line in each of the horizontal pixel columns. The organic light emitting device of claim 6, wherein the ground lines provided for each vertical pixel column are connected to each other at a plurality of points to form a network structure. The organic light emitting device as claimed in claim 8, wherein the ground lines provided for each vertical pixel column are connected to each of the left and right adjacent pixels to form a network structure. Preparing a substrate; Forming a buffer layer and a semiconductor layer on the substrate, forming a source electrode and a drain electrode overlapping a portion of the semiconductor layer, and forming a data line; Forming a gate insulating film on the entire substrate on which the source electrode, the drain electrode, and the data line are formed; Forming a gate electrode and a gate line on the gate insulating film; Forming a passivation layer on the gate electrode; Removing a portion of the passivation layer and the gate insulating layer to form a first contact hole exposing a portion of the source electrode to the outside; Forming a first electrode connected to a source electrode through the first contact hole, a first layer of a ground line connected to the drain electrode, and a second layer of a ground line overlapping the first layer; Forming a light emitting layer on the first electrode; Forming a second electrode on the light emitting layer; Method for producing an organic electroluminescent device comprising a. The second layer of claim 10, further comprising: forming a first electrode connected to the source electrode through the first contact hole, forming a first layer of a ground line connected to the drain electrode, and overlapping the first layer; Forming a step, Sequentially forming a transparent conductive material layer, a metal layer, and a photosensitive film on the substrate on which the first contact hole is formed; Forming a first photoresist pattern by performing photolithography using a mask provided with a diffraction region; Selectively removing a metal layer using the first photoresist pattern to form a metal pattern; Selectively removing the transparent conductive material layer using the first photoresist pattern to form a first layer of a first electrode and a ground line; Removing a region of the first photoresist pattern corresponding to the diffraction region of the mask to form a second photoresist pattern; Selectively removing a metal pattern using the second photoresist pattern to form a second layer of a ground line overlapping the first layer of the ground line; Removing the second photoresist pattern; Method of manufacturing an organic electroluminescent device comprising a. The semiconductor device of claim 10, wherein the semiconductor layer, the source electrode, the drain electrode, the gate insulating layer, and the gate electrode form a driving thin film transistor. The first electrode, the light emitting layer, and the second electrode manufacturing method of an organic light emitting device, characterized in that forming an organic light emitting diode. The method of claim 10, wherein the transparent conductive material layer is made of indium tin oxide (ITO). The method of claim 10, wherein the metal layer is made of any one selected from aluminum (Al), molybdenum (Mo), tungsten (W), and copper (Cu). The display device of claim 10, wherein the gate line and the data line cross each other to define a plurality of pixels, and the pixels form a plurality of vertical pixel columns. The ground line consisting of the first layer and the second layer is a method of manufacturing an organic light emitting display device, characterized in that formed for each vertical pixel column. The method of claim 15, wherein each pixel comprises a plurality of horizontal pixel columns. When the gate electrode and the gate line are formed, an auxiliary ground line to be connected to the ground line is further formed in each of the horizontal pixel columns. The method of claim 15, wherein the ground lines provided for each vertical pixel column are connected to each other at a plurality of points to form a network structure. 18. The method of claim 17, wherein the ground lines provided for each vertical pixel column are connected to each other in left and right adjacent pixels to form a network structure.

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