KR20090064717A - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

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Publication number
KR20090064717A
KR20090064717A KR1020070132022A KR20070132022A KR20090064717A KR 20090064717 A KR20090064717 A KR 20090064717A KR 1020070132022 A KR1020070132022 A KR 1020070132022A KR 20070132022 A KR20070132022 A KR 20070132022A KR 20090064717 A KR20090064717 A KR 20090064717A
Authority
KR
South Korea
Prior art keywords
light emitting
emitting diode
silicon wafer
electrode
internal electrode
Prior art date
Application number
KR1020070132022A
Other languages
Korean (ko)
Inventor
손원진
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020070132022A priority Critical patent/KR20090064717A/en
Publication of KR20090064717A publication Critical patent/KR20090064717A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Device Packages (AREA)

Abstract

A light emitting diode package is provided to simplify a connection structure with an external terminal by using an external electrode of a silicon wafer. An electrode layer is formed on a silicon wafer(110). The electrode layer comprises a first internal electrode, a second internal electrode, a first external electrode(121), and a second external electrode(123). The first internal electrode and the second internal electrode are formed on a top surface(112) of the silicon wafer. A light emitting diode chip(130) is adhered in the first internal electrode and the second internal electrode. The light emitting diode chip is bonded by a wire. The light emitting diode chip is connected to the first internal electrode and the second internal electrode through a conductive adhesive or the wire. The first external electrode and the second external electrode are connected to the first internal electrode and the second internal electrode. A light transmitting resin material(140) of a lens shape or a dome shape is formed on the light emitting diode chip.

Description

Light Emitting Diode Package {LIGHT EMITTING DIODE PACKAGE}

An embodiment of the present invention relates to a light emitting diode package.

Light emitting diodes (LEDs) may form light emitting sources using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series.

Such a light emitting diode is packaged and used as a light emitting device that emits various colors, and the light emitting device is used as a light source in various fields such as a lighting indicator for displaying colors, a character display, and an image display.

An embodiment of the present invention relates to a light emitting diode package in the form of a chip on board based on a silicon wafer.

A light emitting diode package according to an embodiment of the present invention includes first and second internal electrodes formed on a silicon wafer; A plurality of light emitting diode chips mounted on the first and second internal electrodes; And outer first and second outer electrodes connected to the first and second inner electrodes.

Since the LED package according to the embodiment of the present invention is based on the silicon wafer, the heat dissipation characteristics are good.

In addition, it is possible to provide a light emitting diode package that can use a silicon wafer incorporating a protection element of the light emitting diode.

In addition, there is an effect that can be simply connected to the external terminal using the external electrode of the silicon wafer.

Hereinafter, with reference to the accompanying drawings will be described.

1 is a perspective view illustrating a light emitting diode package according to an exemplary embodiment of the present invention, and FIG. 2 is a perspective view of a lens-shaped resin material formed on the package of FIG. 1.

Referring to FIG. 1, the LED package 100 includes a silicon wafer 110, internal electrodes 114 and 116, external electrodes 121 and 123, and a light emitting diode chip 130.

The silicon wafer 110 is a silicon-based wafer level package (WLP), and a top surface 112 of a package body of a silicon polyhedron may be formed flat, and some side surfaces of the body may be inclined. Can be formed.

An electrode layer is formed on the silicon wafer 110, and the electrode layer is processed in various patterns by a predetermined etching process to include first and second internal electrodes 114 and 116 and first and second external electrodes 121 and 123. The number and shape of the first and second internal electrodes 114 and 116 and the external electrodes 121 and 123 may be variously implemented according to the design of the circuit pattern.

The first internal electrode 114 and the second internal electrode 116 are formed on the upper surface 112 of the silicon wafer 110, so that the LED chip 130 is conductive to the first and second internal electrodes 114 and 116. It is bonded with an adhesive and bonded with wire 132.

The light emitting diode chip 130 is a compound semiconductor such as GaAs-based, AlGaAs-based, GaN-based, InGaN-based, or InGaAlP-based, and may be mounted in a chip form. The light emitting diode chip 130 may be classified into a vertical LED chip or a horizontal LED chip according to the electrode formation position, and may be formed on the first and second internal electrodes 114 and 116 with a conductive adhesive or / and wire 132, respectively. Can be connected.

The first and second external electrodes 121 and 123 are connected to the first and second internal electrodes 114 and 116, respectively, and extend from the side surface to the bottom surface of the silicon wafer 110, using surface mount technology (SMT) on the external terminals. Can be bonded.

The silicon wafer 110 may include a protection element such as a zener diode (not shown) connected to the light emitting diode chip 130 in a reverse direction to effectively block an ESD voltage applied from the outside, thereby providing a light emitting diode chip 130. ) Can be protected.

The light emitting diode package 100 includes a plurality of light emitting diode chips 130 mounted in a chip on board (COB) form, thereby extending and using the light emitting diode chips 130 of the silicon wafer 110 in an array form or a module form. It may be. In addition, at least one cavity in which at least one light emitting diode chip 130 is disposed may be formed on the top surface 112 of the silicon wafer 110.

In addition, as shown in FIG. 2, the light emitting diode package 100 has a light transmitting resin material 140 having a lens shape or a dome shape on each light emitting diode chip 130. The transparent resin material 140 dispenses and hardens a resin liquid such as epoxy or silicone by a dispensing method. In addition, phosphors (eg, silicate-based phosphors) may be added to the light-transmitting resin 140 according to the type of the light emitting diode chip 130. In addition, a light-transmissive resin can also be formed using a dome-shaped mold.

3 is a view in which a single lens-shaped resin material is formed on a light emitting diode package structure.

Referring to FIG. 3, the LED package 100A mounts a plurality of LED chips 130 on a silicon wafer 110, and has a single lens shape or a dome shape on the plurality of LED chips 130. Resin 145 is formed. Here, phosphors may be added to the lens material 145.

Such a light emitting diode package is equipped with a light emitting diode chip in the form of a chip-on-board on a silicon wafer having good heat dissipation characteristics, thereby ensuring heat dissipation characteristics, and can be easily connected to an external terminal.

Although the present invention has been described above with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may have an abnormality within the scope not departing from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not illustrated. For example, each component specifically shown in the embodiment of the present invention can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a perspective view showing a light emitting diode package according to an embodiment of the present invention.

FIG. 2 is a view illustrating a lens-shaped resin material formed on the package structure of FIG. 1. FIG.

3 is a view showing a single lens-shaped resin formed on the package structure of FIG.

<Explanation of symbols for the main parts of the drawings>

100, 100A: light emitting diode package 110: silicon wafer

114,116 Internal electrodes 121,123 External electrodes

130: light emitting diode chip 132: wire

140,145: Resin

Claims (5)

First and second internal electrodes formed on the silicon wafer; A plurality of light emitting diode chips mounted on the first and second internal electrodes; A light emitting diode package comprising an outer first and second outer electrode connected to the first and second inner electrodes. The method of claim 1, A light emitting diode package comprising a light transmitting resin formed on each light emitting diode chip or a light transmitting resin added with a phosphor. The method of claim 1, A light emitting diode package comprising a lens-shaped light-transmissive resin material formed on the plurality of light emitting diode chips or a lens-shaped light-transmissive resin material to which phosphors are added. The method of claim 1, The LED package of claim 1, wherein the upper surface of the silicon wafer on which the first and second internal electrodes are formed is formed flat. The method of claim 1, The silicon wafer includes a protection device for circuitry protecting the light emitting diode chip.
KR1020070132022A 2007-12-17 2007-12-17 Light emitting diode package KR20090064717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070132022A KR20090064717A (en) 2007-12-17 2007-12-17 Light emitting diode package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070132022A KR20090064717A (en) 2007-12-17 2007-12-17 Light emitting diode package

Publications (1)

Publication Number Publication Date
KR20090064717A true KR20090064717A (en) 2009-06-22

Family

ID=40993236

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070132022A KR20090064717A (en) 2007-12-17 2007-12-17 Light emitting diode package

Country Status (1)

Country Link
KR (1) KR20090064717A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236539B2 (en) 2012-12-10 2016-01-12 Samsung Display Co., Ltd. Light emitting diode package and manufacturing method thereof
US9520383B2 (en) 2010-04-01 2016-12-13 Lg Innotek Co., Ltd. Light emitting device package and lighting system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9520383B2 (en) 2010-04-01 2016-12-13 Lg Innotek Co., Ltd. Light emitting device package and lighting system
US9236539B2 (en) 2012-12-10 2016-01-12 Samsung Display Co., Ltd. Light emitting diode package and manufacturing method thereof

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