KR20090063601A - Voltage controlled oscillator - Google Patents

Voltage controlled oscillator Download PDF

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KR20090063601A
KR20090063601A KR1020070131031A KR20070131031A KR20090063601A KR 20090063601 A KR20090063601 A KR 20090063601A KR 1020070131031 A KR1020070131031 A KR 1020070131031A KR 20070131031 A KR20070131031 A KR 20070131031A KR 20090063601 A KR20090063601 A KR 20090063601A
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voltage controlled
controlled oscillator
oscillator
fet
amplifier
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KR100958656B1 (en
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김광선
김봉수
변우진
강민수
송명선
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한국전자통신연구원
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • H03B5/1852Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1218Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the generator being of the balanced type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02Varying the frequency of the oscillations by electronic means
    • H03B2201/0208Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode

Abstract

A voltage controlled oscillator is provided to obtain a signal with high power without an additional circuit by connecting a transmission line of 1/4 wavelength to a source terminal of an FET for amplifying a buffer and matching the power with the length of a stub for biasing a coupling signal. A voltage controlled oscillator includes an oscillator, an amplifier, and a pair of transmission lines. The amplifier is cross-combined for oscillating a differential signal and is comprised of a pair of FET(2) to amplify the output of the oscillator and an inductor(1). The pair of transmission lines(7) are short-circuited in the source terminal of the FET. The FET of the amplifier connects a drain terminal for amplifying an oscillation frequency. The signal connection line is serially connected to the drain terminal of the FET of the amplifier. The transmission line includes a capacitor with a fixed value.

Description

전압 제어 발진기{Voltage Controlled Oscillator}Voltage Controlled Oscillator

본 발명은 Push-Push 형태의 전압제어 발진기를 구성할 때 가장 큰 문제중에 하나인 낮은 출력 전력 문제를 해결하기 위해 기존의 인덕터 결합 방식과 달리 Buffer 중폭기에 사용하던 FET의 드레인 단자에서 출력을 결합함으로써 Buffer 중폭기의 이득을 이용하여 출력을 높이는 전압 제어 발진기에 관한 것이다.In order to solve the low output power problem, which is one of the biggest problems when constructing a push-push type voltage controlled oscillator, the present invention combines the output at the drain terminal of the FET used in the buffer heavy attenuator, unlike the conventional inductor coupling method. It is a voltage controlled oscillator that uses the gain of a buffer heavy amplifier to boost its output.

본 발명은 정보통신부 및 정보통신연구진흥원의 IT 원천기술개발사업의 일환으로 수행한 연구로서 도출된 것이다[과제 관리번호:2005-S-046-03, 과제명: 전파자원 이용 기반 기술개발].The present invention is derived as a study performed as part of the IT source technology development project of the Ministry of Information and Communication and the Ministry of Information and Communication Research and Development (Task Management No .: 2005-S-046-03, Task name: Development of radio resource utilization-based technology).

오늘날 집적회로에서의 전압제어 발진기는 단일 칩 송수신기 설계에 있어서 매우 중요한 소자이다. CMOS 기술이 발전함에 따라서 기존의 수 GHz 대역뿐만 아니라 수 십 GHz를 사용하는 통신 시스템의 RF 송수신기를 집적회로로 단일칩화 하는 연구가 활발하게 이루어 지고 있다. 최근에는 60GHz 비허가 대역을 사용하는 근거리 통신에 대한 표준화가 진행되면서 이 표준을 만족하는 저가형 단일칩 개발에 대한 결과가 많이 발표되고 있다. In today's integrated circuits, voltage-controlled oscillators are very important in single-chip transceiver designs. With the development of CMOS technology, research is being actively conducted to single-chip the RF transceiver of a communication system using several tens of GHz as well as the existing GHz band into an integrated circuit. Recently, as standardization of short-range communication using 60GHz unlicensed band is progressed, many results have been published for the development of low-cost single chip meeting the standard.

CMOS의 기술이 발전하여 소자의 동작 주파수가 높아져서 일반적으로 많이 사 용되는 교차 결합 방식의 발진기에 대한 연구가 많이 진행되고 있지만 발진기의 안정화를 위한 PLL의 구성의 어려움과 상대적으로 넓은 출력 주파수 범위를 가지는 특성을 만족하기 위해 원하는 주파수의 1/2 주파수에서 발진시키고 적절히 결합하여 2배의 출력을 얻는 Push-Push 형태의 발진기에 대한 연구도 함께 진행되고 있다. 또한 밀리미터파 대역에서 대부분 사용되는 안테나의 형태가 비평형 입력 구조를 가지므로 Single-ended 형태의 출력 주파수는 RF 혼합기에 사용하고 differential 형태의 1/2 주파수는 안정화를 위한 PLL에 사용할 수 있어 추가적인 주파수 분주기가 필요 없으므로 단일칩을 구성할 때 유리하다.As the technology of CMOS is advanced and the operating frequency of devices is increased, many researches on the commonly used cross-coupled oscillator have been conducted. However, it is difficult to construct a PLL for stabilizing the oscillator and has a relatively wide output frequency range. In order to satisfy the characteristics, the push-push-type oscillator which is oscillated at 1/2 frequency of the desired frequency and properly combined to obtain twice the output is being conducted. In addition, since most antennas used in the millimeter wave band have an unbalanced input structure, single-ended output frequencies can be used in RF mixers and differential half frequencies can be used in PLLs for stabilization. Since no divider is required, it is advantageous when constructing a single chip.

단일칩 형태의 집적회로에 사용되는 전압제어 발진기의 중요한 특성은 원하는 성능 규격을 만족하면서 구조가 간단하고 신호의 안정화를 위한 PLL의 쉬운 구성을 가질 수 있게 설계하는 것이다. 기존의 교차 결합 방식의 전압제어 발진기는 수십 GHz를 사용하는 밀리미터파 대역에서는 출력 주파수의 변화 범위와 PLL을 위한 주파수 분주기 사용 등의 제약을 받게 된다. 그러므로 Push-Push 형태의 전압제어 발진기가 대안이 될 수 있는데 지금까지의 기술은 대부분 인덕터 결합 방식을 사용한다. 인덕터 결합 방식은 기본 주파수에서 맞추어진 발진 조건에서 2배 주파수를 만들어 내는 방식으로 출력 전력이 낮은 것이 가장 큰 문제로 이를 위한 추가적인 증폭기의 사용이 필요하다. 또한 인덕터는 발진을 일으키는 데 가장 중요한 소자인데 인덕터 결합 방식은 신호 출력을 위해서 어쩔 수 없는 추가적인 회로가 구성되는 데 이러한 부분에서 주파수 높아질수록 기생성분이 많아져서 원하는 발진을 방해하는 요소가 된다.An important characteristic of voltage-controlled oscillators used in single-chip integrated circuits is that they can be designed to meet the desired performance specifications, with a simple structure and easy configuration of a PLL for signal stabilization. Conventional cross-coupled voltage controlled oscillators are constrained by the range of output frequencies and the use of frequency dividers for PLLs in the millimeter wave band using tens of GHz. Therefore, a push-push type voltage controlled oscillator may be an alternative. Most of the techniques used up to now use an inductor coupling method. The inductor coupling method produces twice the frequency at the oscillation condition set at the fundamental frequency, and the biggest problem is that the output power is low. An additional amplifier is required. Inductors are also the most important elements for generating oscillation. Inductor coupling is an inevitable additional circuit for signal output. At these frequencies, the higher the frequency, the more parasitic elements can interfere with the desired oscillation.

도 1은 집적회로에서 일반적으로 많이 사용되고 있는 교차 결합 전압제어 발진기의 회로도이다. 교차로 연결된 한 쌍의 FET(2)와 인덕터(1)로 발진 회로를 구성하고 여기에 주파수 변화를 위한 바렉터(varator, 3)가 연결되며 출력 부하에 대한 영향을 줄이기 위해 공통 드레인 구조의 버퍼 증폭기(4)로 이루어져 있다. 가장 간단한 형태의 회로이지만 송수신기에 적용하기 위해서는 PLL을 위해서 추가적인 주파수 분주기가 필요하고 수 십 GHz이상의 주파수에서는 기생성분 때문에 큰 사이즈의 트랜지스터를 사용할 수 없으므로 적절한 출력 전력을 위해서 추가적인 증폭기가 필요하게 된다. 1 is a circuit diagram of a cross-coupled voltage controlled oscillator which is generally used in an integrated circuit. The oscillation circuit is composed of a pair of cross-connected FETs (2) and inductors (1), and varactors (3) for frequency change are connected to them, and a common drain structure buffer amplifier is used to reduce the influence on the output load. It consists of (4). Although the simplest type of circuit, an additional frequency divider is required for the PLL to be applied to the transceiver, and at a frequency above several tens of GHz, parasitic components cannot be used because of the large size transistors, and thus an additional amplifier is required for proper output power.

도 2는 일반적인 Push-Push 형태의 전압제어 발진기의 회로도를 나타낸다. 기본적인 발진 회로는 교차 결합 전압제어 발진기와 동일한데 인덕터(1) 부분에서 출력을 위한 결합 구조와 바이어스를 위한 전송선(5)으로 구성된다. 한 쌍의 발진회로에서 나오는 신호는 180도의 위상차를 가지는데 인덕터 가운데에서 신호를 출력하면 기본 주파수는 상쇄되고 2배 주파수는 동 위상으로 합해져서 출력이 된다. 이러한 회로는 출력을 위한 회로가 발진 회로에 영향을 주어 발진 특성을 나쁘게 할 수 있다.2 shows a circuit diagram of a general push-push type voltage controlled oscillator. The basic oscillator circuit is the same as the cross-coupled voltage controlled oscillator, and is composed of a coupling structure for output and a transmission line 5 for bias in the inductor 1 part. The signal from the pair of oscillator circuits has a phase difference of 180 degrees. When the signal is output from the center of the inductor, the fundamental frequency is canceled and the double frequency is summed in the same phase to be output. Such circuits can cause the circuitry for the output to affect the oscillation circuit, resulting in poor oscillation characteristics.

본 발명이 해결하고자 하는 기술적 과제는 Push-Push 형태의 전압제어 발진기를 구성할 때 가장 큰 문제중에 하나인 낮은 출력 전력 문제를 해결하기 위해 기존의 인덕터 결합 방식과 달리 Buffer 중폭기에 사용하던 FET의 드레인 단자에서 출력을 결합함으로써 Buffer 중폭기의 이득을 이용하여 출력을 높이는 방법을 제안한다. The technical problem to be solved by the present invention, unlike the conventional inductor coupling method to solve the low output power problem, which is one of the biggest problems when configuring a push-push type voltage controlled oscillator, the drain of the FET used in the buffer medium aerator By combining the output at the terminal, we propose a method to increase the output by using the gain of the buffer heavy amplifier.

상기의 과제를 이루기 위해, 본 발명에 의한 전압 제어 발진기는 차등 신호를 발진하기 위해 교차 결합되거나 대칭형으로 구성된 한 쌍의 FET 및 인덕터로 구성된 발진부; 상기 발진부의 출력을 증폭하는 한 쌍의 FET로 구성된 증폭부; 및 상기 증폭부의 FET 각각의 소스 단자에 끝이 단락된 한 쌍의 전송선을 포함하는 것을 특징으로 한다.In order to achieve the above object, the voltage controlled oscillator according to the present invention includes an oscillator comprising a pair of FETs and inductors cross-coupled or symmetrically configured to oscillate a differential signal; An amplifier comprising a pair of FETs that amplify the output of the oscillator; And a pair of transmission lines whose ends are shorted to the source terminals of the respective FETs of the amplifier.

바람직하게는, 상기 증폭부의 FET는 발진 주파수를 증폭하기 위해 드레인 단자를 연결한 것을 특징으로 한다.Preferably, the amplifier FET is characterized in that the drain terminal is connected to amplify the oscillation frequency.

상기 전송선은 1/4 파장 길이를 갖는 것을 특징으로 한다.The transmission line is characterized in that it has a quarter wavelength length.

상기 전압 제어 발진기는 상기 증폭부의 FET의 드레인 단자에 직렬 연결된 신호 연결선을 더 포함하는 것을 특징으로 한다.The voltage controlled oscillator may further include a signal connection line connected in series to the drain terminal of the FET of the amplifier.

상기 전송선은 끝에 고정 값을 가지는 커패시터를 더 포함하는 것을 특징으로 한다.The transmission line further comprises a capacitor having a fixed value at the end.

상기 전송선은 기존 주파수에서는 개방 회로로 작용하고, 2배 이상의 주파수에서는 단락 회로로 동작하는 것을 특징으로 한다.The transmission line functions as an open circuit at an existing frequency, and operates as a short circuit at a frequency more than twice.

상기 전압 제어 발진기는 바이어스 신호 인가를 위한 스터브를 더 포함하는 것을 특징으로 한다.The voltage controlled oscillator may further include a stub for applying a bias signal.

상기 전압 제어 발진기는 상기 신호 연결선과 상기 스터브를 사용하여 출력 신호를 매칭하는 것을 특징으로 한다.The voltage controlled oscillator may match an output signal by using the signal connection line and the stub.

이상에서 설명한 바와 같이 본원 발명은 일반적인 Push-Push 전압제어 발진기 구조에서 버퍼 증폭용 FET의 소스단에 1/4파장의 전송선을 연결하고 결합 신호와 바이어스를 위한 스터브의 길이로 출력을 정합함으로써 추가 회로의 구성 없이 고출력의 신호를 얻을 수 있다. 또한 두 개의 출력단자에서 기본 주파수와 2배의 주파수 각각의 신호가 차단되는 특성을 가지며 기본 주파수 출력 단자로 추가적인 증폭기를 사용하지 않으므로 신호의 특성이 열화 되는 것을 막는 효과가 있다. 또한, 증폭용 FET의 소스단에 1/4파장의 전송선을 고정 값을 가지는 커패시터와 같이 사용할 경우 길이가 짧아져서 소형화가 가능하다.As described above, the present invention provides an additional circuit by connecting a 1 / 4-wavelength transmission line to the source terminal of the buffer amplification FET in the general push-push voltage controlled oscillator structure and matching the output with the length of the stub for the combined signal and the bias. A high power signal can be obtained without the configuration of. In addition, the signal of the fundamental frequency and the double frequency are cut off at the two output terminals, and the additional frequency is not used as the fundamental frequency output terminal, thereby preventing the signal characteristics from deteriorating. In addition, when a 1/4 wavelength transmission line is used in combination with a capacitor having a fixed value at the source terminal of the amplifying FET, the length can be shortened and miniaturized.

이하, 본 발명에 의한 전압 제어 발진기를 첨부된 도면을 참조하여 상세히 설명한다. Hereinafter, a voltage controlled oscillator according to the present invention will be described in detail with reference to the accompanying drawings.

도 3은 본 발명에서 제안한 새로운 구조의 Push-Push 형태의 전압제어 발진기의 회로도이다. 제안된 전압제어 발진기는 한 쌍의 트랜지스터(2)가 교차로 결합 되고 여기에 인덕터(1)가 연결되어 발진 회로를 구성한다. 3 is a circuit diagram of a push-push type voltage controlled oscillator having a novel structure proposed in the present invention. In the proposed voltage controlled oscillator, a pair of transistors 2 are cross-coupled and an inductor 1 is connected thereto to form an oscillation circuit.

기본 발진 회로는 교차 결합 형태가 아니라 차등 신호를 출력하기 위한 모든 대칭형 구조가 적용될 수 있다. 그리고 출력에 FET(4)가 위치하고 그 FET의 소스 단자에는 기본 주파수에서 1/4파장의 길이의 전송선(7)이 연결되고 드레인 단자에는 신호 결합을 위한 신호 연결선(6)과 바이어스를 위한 스터브(5)가 연결된다. The basic oscillator circuit is not cross-coupled, but any symmetrical structure for outputting a differential signal can be applied. The FET 4 is located at the output, and a transmission line 7 of 1/4 wavelength at the fundamental frequency is connected to the source terminal of the FET, and a signal connection line 6 for signal coupling and a stub for bias are connected to the drain terminal. 5) is connected.

바이어스를 위한 스터브(5)는 발진기의 대칭 구조를 위해서 도 3과 같이 쌍으로 구성할 수도 있고 하나로 구성될 수도 있다. The stubs 5 for bias may be configured in pairs or in one as shown in FIG. 3 for the symmetrical structure of the oscillator.

제안된 회로는 증폭용 FET(4) 소스 단자에 연결된 1/4파장의 전송선(7)이 기본 발진 주파수에서는 개방 회로로 작용하여 출력이 되고 2배의 발진 주파수에서는 단락 회로가 되어 드레인으로 이득을 가지고 증폭되어 출력된다. In the proposed circuit, the 1/4 wavelength transmission line (7) connected to the amplifying FET (4) source terminal acts as an open circuit at the basic oscillation frequency, and becomes a short circuit at the double oscillation frequency. Amplified and output.

소스 단자에 연결된 1/4파장의 전송선(7)은 한 쪽면이 단락되는데 고정 값을 가지는 커패시터를 단락면에 사용할 경우 길이를 줄이고 단락구조를 쉽게 구현할 수 있다. The 1/4 wavelength transmission line 7 connected to the source terminal is shorted on one side, and when a capacitor having a fixed value is used on the shorted surface, the length can be shortened and the short circuit structure can be easily implemented.

또한, 출력 신호의 결합을 위한 신호 연결선(6)과 바이어스를 위한 스터브(5)는 출력 신호를 매칭하는 구조로 사용함으로써 출력신호를 더 높일 수 있다 . In addition, the signal connection line 6 for coupling the output signal and the stub 5 for the bias may further increase the output signal by using the structure to match the output signal.

도 4는 종래의 인덕터 결합 방식을 이용한 회로의 시뮬레이션 결과이고, 도 5는 본 발명에 따른 buffer 증폭기 드레인 단자 결합 방식을 이용한 회로의 시뮬레이션 결과이다. 도 4 및 도 5는 동일한 사이즈의 트랜지스터를 가지고 시뮬레이션 하였다. 종래의 전압 제어 발진기는 도 4에서 보는 바와 같이 출력 신호의 크기가 최고점 M0에서 157[mV]의 크기를 갖고, 최저점 M1에서 -154.9[mV]의 크기를 갖는 다. 이에 비해서 본원발명의 발진기는 도 5에서 보는 바와 같이, 최고점 M0에서 299.5[mV]의 크기를 갖고, 최저점 M1에서 -261.5[mV]의 크기를 갖는다. 즉, 본원발명에 의한 전압 제어 발진기는 종래의 전압 제어발진기에 비해, 7[dB] 이상 출력이 상승시킬 수 있고, 출력 매칭을 통하여 더 높은 출력도 가능하도록 한다.4 is a simulation result of a circuit using a conventional inductor coupling method, and FIG. 5 is a simulation result of a circuit using a buffer amplifier drain terminal coupling method according to the present invention. 4 and 5 were simulated with transistors of the same size. The conventional voltage controlled oscillator has a magnitude of the output signal of 157 [mV] at the highest point M0 and a size of -154.9 [mV] at the lowest point M1, as shown in FIG. In contrast, the oscillator of the present invention has a size of 299.5 [mV] at the highest point M0 and a size of -261.5 [mV] at the lowest point M1, as shown in FIG. That is, the voltage controlled oscillator according to the present invention can increase the output of 7 [dB] or more, compared to the conventional voltage controlled oscillator, and enables higher output through output matching.

이러한 본원 발명인 전압 제어 발진기는 이해를 돕기 위하여 도면에 도시된 실시예를 참고로 설명되었으나, 이는 예시적인 것에 불과하며, 당해 분야에서 통상적 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호 범위는 첨부된 특허청구범위에 의해 정해져야 할 것이다.Such a voltage controlled oscillator of the present invention has been described with reference to the embodiment shown in the drawings for clarity, but this is merely exemplary, and those skilled in the art may various modifications and other equivalent embodiments therefrom. Will understand. Therefore, the true technical protection scope of the present invention will be defined by the appended claims.

도 1 종래의 교차 결합을 이용한 전압제어 발진기의 회로도이다.1 is a circuit diagram of a voltage controlled oscillator using a conventional cross coupling.

도 2 종래의 인덕터 결합 방식의 전압제어 발진기의 회로도이다.2 is a circuit diagram of a voltage controlled oscillator of a conventional inductor coupling method.

도 3 도 본 발명에 따른 buffer 증폭기 드레인 단자 결합 방식의 Push-Push 전압제어 발진기의 회로도이다.3 is a circuit diagram of a push-push voltage controlled oscillator of a buffer amplifier drain terminal coupling method according to the present invention.

도 4 도 종래의 인덕터 결합 방식을 이용한 회로의 시뮬레이션 결과이다.4 is a simulation result of a circuit using a conventional inductor coupling method.

도 5 도 본 발명에 따른 buffer 증폭기 드레인 단자 결합 방식을 이용한 회로의 시뮬레이션 결과이다.5 is a simulation result of a circuit using a buffer amplifier drain terminal coupling method according to the present invention.

Claims (8)

차등 신호를 발진하기 위해 교차 결합되거나 대칭형으로 구성된 한 쌍의 FET 및 인덕터로 구성된 발진부; An oscillator comprising a pair of FETs and inductors cross-coupled or symmetrically configured to oscillate a differential signal; 상기 발진부의 출력을 증폭하는 한 쌍의 FET로 구성된 증폭부; 및An amplifier comprising a pair of FETs that amplify the output of the oscillator; And 상기 증폭부의 FET 각각의 소스 단자에 끝이 단락된 한 쌍의 전송선을 포함하는 것을 특징으로 하는 전압 제어 발진기.And a pair of transmission lines whose ends are shorted at source terminals of the FETs of the amplifier. 제1항에 있어서, The method of claim 1, 상기 증폭부의 FET는 발진 주파수를 증폭하기 위해 드레인 단자를 연결한 것을 특징으로 하는 전압 제어 발진기.The FET of the amplification unit is a voltage controlled oscillator, characterized in that for connecting the drain terminal to amplify the oscillation frequency. 제1항에 있어서, 상기 전송선은The method of claim 1, wherein the transmission line 1/4 파장 길이를 갖는 것을 특징으로 하는 전압 제어 발진기.A voltage controlled oscillator having a quarter wavelength length. 제1항에 있어서, 상기 전압 제어 발진기는The oscillator of claim 1, wherein the voltage controlled oscillator 상기 증폭부의 FET의 드레인 단자에 직렬 연결된 신호 연결선을 더 포함하는 것을 특징으로 하는 전압 제어 발진기.And a signal connection line connected in series to the drain terminal of the FET of the amplifier. 제1항에 있어서, 상기 전송선은 The method of claim 1, wherein the transmission line 끝에 고정 값을 가지는 커패시터를 더 포함하는 것을 특징으로 하는 전압 제어 발진기.The voltage controlled oscillator further comprises a capacitor having a fixed value at the end. 제1항에 있어서, 상기 전송선은 The method of claim 1, wherein the transmission line 기존 주파수에서는 개방 회로로 작용하고, 2배 이상의 주파수에서는 단락 회로로 동작하는 것을 특징으로 하는 전압 제어 발진기.A voltage controlled oscillator which operates as an open circuit at a conventional frequency and operates as a short circuit at a frequency more than twice. 제4항에 있어서, 상기 전압 제어 발진기는The oscillator of claim 4, wherein the voltage controlled oscillator 바이어스 신호 인가를 위한 스터브를 더 포함하는 것을 특징으로 하는 전압 제어 발진기.A voltage controlled oscillator further comprising a stub for bias signal application. 제7항 있어서, The method of claim 7, 상기 신호 연결선과 상기 스터브를 사용하여 출력 신호를 매칭하는 것을 특징으로 하는 전압 제어 발진기.And the output signal is matched using the signal connection line and the stub.
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