KR20090046553A - Gas distribution unit and appartus of plasma processing for substrate having the gas distribution unit - Google Patents

Abstract

Disclosed are a gas injection unit and a plasma substrate processing apparatus including the same, by generating a local plasma inside an injection hole, thereby improving plasma processing efficiency and source gas injection efficiency. According to an aspect of the present invention, there is provided a gas injection unit for spraying a source gas in a process chamber in which a surface treatment process is to be performed, comprising: a plate, a first injection unit formed through the plate, and having a plasma generated therein; And a second injection formed to enable injection of the source gas independently of the dead part. Therefore, the generation density of the plasma can be increased by the local plasma generated in the first injection unit, and the energy of the plasma can be effectively transferred to the substrate, thereby improving the surface treatment efficiency and quality of the substrate by the plasma.

Plasma substrate processing equipment, HDP, CVD, showerheads, halo cathode

Description

GAS DISTRIBUTION UNIT AND APPARTUS OF PLASMA PROCESSING FOR SUBSTRATE HAVING THE GAS DISTRIBUTION UNIT}

The present invention relates to an apparatus for surface treatment of a substrate using a plasma, and more particularly, to a gas injection unit for improving the density and uniformity of a plasma, and a plasma substrate processing apparatus having the same.

Plasma is generated by free electrons excited by direct current (DC) or high frequency electromagnetic fields, and the excited free electrons collide with gas molecules to generate active species such as ions, electrons, and radicals. species). When the active group or the magnetic field is applied, chemical and physical reactions occur between the object and the active group particles as the active group particles are accelerated or diffused in the plasma or on the surface of the object in contact with the plasma. To change the properties of the object surface. In this way, the surface property of the material is changed by the active group (plasma) is called 'surface treatment'.

In general, a plasma processing method in a semiconductor manufacturing process refers to forming a thin film on a substrate by forming a reactive material in a plasma state, or cleaning, ashing, or cleaning the surface of the substrate using a reactive material in a plasma state. Etching process.

Recently, as the degree of integration of semiconductor devices increases in the semiconductor manufacturing process, the demand for micromachining increases. That is, in the sub-micron class fine pattern, it is important to form a thin film having a uniform thickness or to improve the surface treatment quality such as etching or ashing, which can be improved by using a high density plasma.

However, as the size of the semiconductor substrate is gradually increased, the size of the plasma processing apparatus is also enlarged. As a result, a density difference between the source gases is generated in the portion where the source gas flows into the plasma processing apparatus and the remaining portion. On the other hand, such a density difference of the source gas will affect the surface treatment results.

In addition, in the conventional plasma substrate processing apparatus, since a substantial amount of the source gas introduced into the process chamber is not changed into plasma, the consumption of the source gas increases and it is difficult to supply the source gas and the plasma quickly. And, due to this there was a problem that the surface treatment speed is lowered.

Here, the supply density of the source gas is closely influenced by the shape of the shower head. Conventional shower heads are provided with injection holes for injecting reactive particles of the source gas and the plasma to the substrate, and there is a problem in that the reactivity becomes weak while the reactive particles of the plasma pass through the injection holes. In particular, the conventional plasma processing apparatus has a structure in which the source gas is injected into the entire process chamber through the shower head, so it is difficult to control the supply amount of the source gas in the region where the variation in the plasma distribution density occurs.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and to provide a plasma substrate processing apparatus capable of uniformly generating plasma in a plasma substrate processing apparatus.

In addition, the present invention is to provide a plasma substrate processing apparatus capable of preventing the reactive particles of the plasma from disappearing while passing through the showerhead, and can effectively transfer the energy of the plasma to the substrate.

In addition, the present invention is to provide a plasma substrate processing apparatus capable of uniformly adjusting the supply amount of the first source gas and the second source gas.

Further, the present invention is to provide a plasma substrate processing apparatus that prevents the substrate from being damaged by directly impinging the plasma on the substrate.

According to embodiments of the present invention for achieving the above object of the present invention, in the plasma substrate processing apparatus for performing a surface treatment process of the substrate using the plasma, the source gas is provided in the process chamber to be performed In the gas injection unit for spraying, the plate, the first injection unit formed through the plate, the plasma is generated, the second injection unit formed to enable the injection of the source gas independently of the first injection unit Include.

In an embodiment, the first injector may include a cone-shaped hole in which a cross-sectional area increases toward the lower side in the flow direction of the source gas so that the source gas may be excited into the plasma in the first injector. In addition, since the local plasma is generated inside the first injection powder, the first injection portion is formed of a dielectric material. Alternatively, the plate itself may be formed of a dielectric material.

In an embodiment, the second injector includes a cavity formed in the plate, and a plurality of holes formed to communicate the cavity and the lower part of the plate.

In an embodiment, the connecting passage is formed to communicate the cavity and the first injection portion. In detail, a connection flow path is formed such that the source gas in the second injection unit flows into the first injection unit by the source gas flowing along the first injection unit. In addition, the connection flow path is formed with a fine hole so that the source gas flows into the first injection unit by the Venturi effect. Here, the connection flow path is formed on the upstream side in the direction in which the source gas flows in the first injection part so as to efficiently generate the Venturi effect of the connection flow path.

In an embodiment, the plate may be coupled to a first plate having a plurality of first injection holes formed therein, and coupled to a lower portion of the first plate to form a cavity in which source gas may flow.

On the other hand, according to embodiments of the present invention for achieving another object of the present invention, a substrate is accommodated, a process chamber for providing a plasma generating space, a susceptor provided in the process chamber, to support the substrate, the A plasma substrate including a source gas supply unit supplying a source gas to a process chamber, an electrode unit provided at one side of the process chamber to excite the source gas into a plasma state, and a gas injection unit to inject the source gas into the process chamber The processing apparatus is started. In particular, the plasma substrate processing apparatus includes a gas injection unit for generating a plasma having a uniform density and improving the plasma processing effect. In detail, the gas injection unit is coupled to a first plate having a plurality of first injection holes, coupled to a lower portion of the first plate to form a cavity in which source gas can flow, and a plurality of second injection holes. The second plate is formed to penetrate the second plate to correspond to the first injection hole, and includes a third injection hole in which a plasma is generated.

According to the present invention, first, plasma can be generated efficiently and uniformly. Therefore, the surface treatment efficiency and quality of a board | substrate can be improved. In addition, it is possible to increase the surface treatment speed of the substrate.

Second, by generating a local plasma by the halo cathode effect inside the injection hole of the gas injection unit, the energy of the plasma can be efficiently transferred to the substrate, and the efficiency of the surface treatment process of the substrate can be improved. have.

Third, by forming the micro holes in the first injection hole, the second source gas is introduced into the flow path of the first source gas by the venturi effect. Therefore, it is possible to suppress the difference between the source gas injection amounts in the first injection hole and the second injection hole, and to maintain the injection amounts of the first source gas and the second source gas uniformly.

Fourth, the plasma particles are directly impinged on the substrate to prevent damage to the substrate, but the energy of the plasma is sufficiently transferred to the substrate to improve the efficiency of the surface treatment process.

Fifth, the source gas can be supplied to the substrate quickly and without large loss, and the unnecessary consumption of the source gas can be reduced by improving the plasma generation efficiency of the source gas.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments.

1 is a cross-sectional view illustrating a plasma substrate processing apparatus according to an embodiment of the present invention.

Hereinafter, a plasma substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 4.

Referring to the drawings, the plasma substrate processing apparatus 100 includes a process chamber 110, a susceptor 120, a gas injection unit 130, a source gas supply unit 140, and an electrode unit 150.

In the present invention, the plasma substrate processing apparatus 100 refers to an apparatus for performing a surface treatment on the substrate 10 by using the plasma (P). Here, the surface treatment refers to changing the surface characteristics of the substrate 10 by reacting the surface of the substrate 10 with ions or radicals of the plasma P. For example, the surface treatment process is a deposition process for forming a thin film on the surface of the semiconductor substrate during the semiconductor manufacturing process, cleaning, etching and ashing to remove the material from the substrate surface Process.

For example, the substrate 10 may be a silicon wafer that becomes a semiconductor substrate. However, the present invention is not limited thereto, and the substrate 10 may be a glass substrate for a flat panel display device such as an LCD and a PDP.

The source gas may vary depending on the type of the substrate 10 or the type of surface treatment process. For example, the surface treatment process may be any one of surface modification, Si etching, photoresist etching, sterilization and deposition.

Hereinafter, a high density plasma chemical vapor deposition (HDP CVD) apparatus performing a chemical vapor deposition process on a semiconductor substrate will be described as an example.

However, the present invention is not limited to chemical vapor deposition, and the plasma substrate processing apparatus according to the present invention may be used for other types of plasma processing apparatus such as dry cleaning, etching and ashing.

The process chamber 110 is accommodated in the substrate 10, the surface treatment process for the substrate 10 is performed. For example, the process chamber 110 may have a cylindrical shape corresponding to the substrate 10. In addition, the process chamber 110 provides a predetermined space in which the plasma P for surface treatment of the substrate 10 is generated.

The plasma P may be formed in a low pressure atmosphere close to a vacuum. In addition, the process chamber 110 has a sealed structure capable of maintaining a vacuum.

The electrode unit 150 is applied with a high frequency power. In addition, the electrode unit 150 serves to excite the source gas to the plasma P state and to provide the generated plasma P into the process chamber 110.

For example, the electrode unit 150 is a coil that forms an electric field when high frequency power is applied. In particular, the electrode unit 150 is formed to generate an electric field that accelerates the plasma P particles into the process chamber 110. The electrode unit 150 generates an electric field in the vertical direction in the process chamber 110. The electric field generated by the electrode unit 150 is formed in a direction perpendicular to the surface to be processed of the substrate 10.

When the source gas is supplied into the electric field, electrons are accelerated by the energy of the electric field, and as the accelerated electrons and the source gas molecules are accelerated and collided with each other, the source gas molecules are decomposed into ions and radicals. do. That is, the source gas is in the plasma P state. In addition, the plasma P is accelerated to the substrate 10 by the electric field to react with the surface of the substrate 10.

The plasma P is generated by the free electrons included in the electric field. When the source gas is supplied to the electric field, the free electrons and the molecules of the source gas collide to generate active species such as ions, radicals and electrons. . Herein, the radical refers to an atom in which a molecule or molecular bond of the source gas excited by energy is broken, and is electrically neutral unlike ions. The active group is very unstable and has high reactivity with other materials, and physically or chemically reacts with the surface of the substrate 10 to change characteristics of the surface of the substrate 10.

In detail, the electrode unit 150 excites the source gas into the plasma P state and accelerates the generated particles of the plasma P into the process chamber 110. ) May be a coil disposed above and wound a plurality of times. For example, the electrode unit 150 may correspond to an upper portion of the process chamber 110 and may be wound in the form of a flat spiral coil.

In addition, the shape and arrangement of the electrode unit 150 is not limited to the above-described embodiment, and the size and the number of windings of the coil forming the electrode unit 150 excite the source gas in the plasma P state. And may be formed in various ways that may be formed in the process chamber 110.

The susceptor 120 is provided under the process chamber 110 to support the substrate 10. For example, the susceptor 120 may be an electrostatic chuck that fixes the substrate 10 by electrostatic force.

Here, the susceptor 120 is grounded to serve as a ground electrode for the electrode unit 150. Alternatively, high frequency power may be applied to the susceptor 120 as well as the electrode unit 150. That is, the susceptor 120 not only fixes the substrate 10 during the surface treatment process, but also particles such as ions and radicals of the plasma P collide with the substrate 10 with a sufficiently high energy. To provide a bias voltage.

The source gas supply unit 140 is provided above the process chamber 110 to supply source gas into the process chamber 110. Here, the source gas supply unit 140 may supply two different types of source gas. The source gas supply unit 140 may include a first source gas supply unit 141 for supplying a first source gas S1 and a second source gas supply unit 142 for supplying the second source gas S2. have.

Here, the source gas is appropriately selected according to the surface treatment process. For example, the first source gas S1 may be a gas excited in a plasma P state. The second source gas S2 may be a gas including a material reacting with the surface of the substrate 10 by using the reactivity of the plasma P.

For example, the first source gas supply unit 141 is provided above the process chamber 110, provides the first source gas S1 into the process chamber 110, and provides a plasma P state. Here it is. The second source gas supply unit 142 is connected to the gas injection unit 130 to provide a second source gas S2 to the surface of the substrate 10 through the gas injection unit 130.

The gas injection unit 130 is provided on the substrate 10, and a plurality of injection holes are provided to provide the source gases S1 and S2 and the plasma P to the surface of the substrate 10. . In addition, the gas injection unit 130 separates the space where the plasma P is generated from the space where the surface treatment process is performed on the substrate 10. In addition, a plasma P is generated at an upper portion of the gas injection unit 130, and the substrate 10 is accommodated at a lower portion of the gas injection unit 130 to perform a surface treatment process.

Hereinafter, the gas injection unit 130 will be described in detail with reference to the accompanying drawings.

2 to 4 are cross-sectional views for explaining the gas injection unit 130 according to an embodiment of the present invention.

The gas injection unit 130 has a shape of plates 131 and 133 having a plurality of injection holes 132, 134 and 136 for injecting the source gas.

In detail, the gas injection unit 130 is divided into at least two spaces and connected to the source gas supply unit 140 to connect the first source gas S1 and the second source gas S2. Each of the flow paths provided to the substrate 10 is independently formed.

In particular, the gas injection unit 130 partitions the inside of the process chamber 110 and serves to transfer the generated plasma P to the substrate 10. Therefore, the energy of the plasma P is transferred to the substrate 10 so that the surface treatment process of the substrate 10 is effectively performed, and the plasma P particles collide with the substrate 10. There is an effect of preventing the substrate 10 from being damaged.

The gas injection unit 130 is in close contact with the process chamber 110. For example, the gas injection unit 130 has a disk shape, and an outer circumferential edge thereof is in close contact with an inner wall surface of the process chamber 110. Therefore, the source gas and the plasma P are transferred to the substrate 10 only through the injection holes 132, 134, and 136 of the gas injection unit 130.

However, the shape of the gas injection unit 130 is not limited thereto, and may have various shapes according to the shape of the process chamber 110. For example, in the case of a flat panel display device, since a rectangular or polygonal substrate is used, unlike the semiconductor substrate, the gas injection unit 130 may also be formed in a rectangular or polygonal shape.

The gas injection unit 130 includes a first plate 131 and a second plate 133 formed with a predetermined space therein and formed to be coupled to each other. For example, the first plate 131 and the second plate 133 may be formed to be coupled to each other up and down to form one circular plate.

The first plate 131 and the second plate 133 are coupled to form a flow path through which the second source gas S2 flows. For example, the first plate 131 and the second plate 133 are combined to form a cavity 137 having a predetermined volume therein. In addition, the cavity 137 is connected to the second source gas supply unit 142 at one side thereof, and is connected to each other so that the second source gas S2 may be evenly supplied to the entire gas injection unit 130.

Here, a coupling part for coupling the first plate 131 and the second plate 133 may be provided. For example, the first plate 131 and the second plate 133 may communicate with each other such that the first injection hole 132 and the third injection hole 134 communicate with each other. The second plate 133 may be coupled to be engaged. In addition, the second source gas S2 supplied to the cavity 137 flows out of the gas injection unit 130 to the combined portion of the first plate 131 and the second plate 133. Sealing members can be provided to prevent them.

In addition, the first plate 131 and the second plate 133 may be damaged by the plasma P or an arc discharge may occur to prevent the plasma P from becoming unstable, and the plasma P particles Is preferably formed of a dielectric material to pass through the plates (131, 133). For example, the first plate 131 and the second plate 133 may be formed of an oxide ceramic or polymer resin. Alternatively, a dielectric material may be coated on the surfaces of the plates 131 and 133.

In addition, the gas injection unit 130 may be grounded so that the plasma (P) can be generated stably. Of course, a high frequency power is applied to the gas injection unit 130 to serve as another electrode.

A plurality of first injection holes 132 for injecting the first source gas S1 are formed in the first plate 131. For example, the first injection hole 132 is densely disposed radially with respect to the center point of the first plate 131. Therefore, the first source gas S1 excited in the plasma P state is uniformly sprayed onto the substrate 10 through the first injection hole 132.

The second plate 133 is formed to communicate the cavity 137 and the process chamber 110, and a plurality of second injection holes for injecting the second source gas S2 into the substrate 10. 136 is formed. Here, the second injection hole 136 is also densely disposed on the second plate 132 so as to uniformly inject the second source gas S2 onto the surface of the substrate 10. In addition, the second injection hole 136 is disposed not to overlap with the first injection hole 132.

A third injection hole 134 is formed in the second plate 133 to correspond to the first injection hole 132 to provide the first source gas S1 to the substrate 10. Here, the third injection hole 134 is formed at a position corresponding to the first injection hole 132 and is formed so as not to overlap with the second injection hole 136.

The third injection hole 134 has a conical shape in which the cross-sectional area increases toward the lower side in the direction in which the first source gas S1 flows. In particular, the inclined wall surface of the third injection hole 134 allows the diffusion of the first source gas (S1) to be active, thereby providing an effect that the plasma (P) is uniformly provided on the surface of the substrate (10). have.

In the third injection hole 134, the local plasma P2 is generated by the halo cathode effect. In detail, referring to FIG. 4, a potential difference between the upper end of the first plate 131 and the lower end of the second plate 133 is caused by the potential difference between the upper end and the lower end of the gas injection unit 130. Occurs. In addition, such a potential difference excites the first source gas S1 passing through the third injection hole 134 in the first injection hole 134 to the plasma P2 state. That is, the local plasma P2 is generated in the first source gas S1 in the third injection hole 134.

Here, since the radicals of the plasma P particles have a very short lifespan, the speed of the first source gas S1 passing through the first injection hole 132 and the inside of the first injection hole 132 may be reduced. It is greatly affected by the material. That is, the inside of the first injection hole 132 and the third injection hole 134 is formed of a non-conductor or a dielectric material so as to minimize the influence on the reducing action of the radical. Alternatively, in order to prevent the first plate 131 and the second plate 133 from being damaged by the plasma P or affecting the unstable state of the plasma P, the first plate 131 is prevented. And the second plate 133 itself may be formed of a dielectric material.

The gas injection unit 130 mixes the first source gas S1 and the second source gas S2, and uniformly supplies a supply amount of the first source gas S1 and the second source gas S2. It includes a connection passage 135 for maintaining. For example, the connection passage 135 is a hole formed to communicate with the cavity 137 through the first injection hole 132.

In particular, the connection flow path 135 is a fine hole having a smaller diameter than the first injection hole 132, and the second source gas S2 is formed in the first injection hole by a venturi effect. Inflow to (132). Therefore, a balance between the injection amounts of the first source gas S1 and the second source gas S injected from the first injection hole 132 and the third injection hole 134 may be maintained.

Hereinafter, the operation of the connection channel 135 will be described in detail.

Referring to FIG. 3, as the first source gas S1 flows along the first injection hole 132, a venturi is formed at an end portion of the connection flow path 135 communicating with the first injection hole 132. Since a predetermined pressure drop occurs due to the effect, a pressure difference occurs at both ends of the connection flow path 135. As a negative pressure is formed at an end portion of the connection passage 135 exposed to the first injection hole 132, a part of the second source gas S2 in the cavity 137 is formed in the first flow path. It flows into the injection hole 132. In addition, the first source gas S1 and the second source gas S2 are mixed to flow into the third injection hole 134.

Here, in order to efficiently generate the Venturi effect in the connection passage 135, the connection passage 135 preferably has a smaller diameter than the first injection hole 132. In addition, the connection passage 135 may be formed at an upstream side in the flow direction of the first source gas S1 in the first injection hole 132. In addition, the connection passage 135 may be a hole formed in a direction perpendicular to an inner wall of the first injection hole 132, that is, in a radial direction of the first injection hole 132.

In addition, the connection passage 135 may have a plurality of holes formed at predetermined intervals in the first injection hole 132. For example, four connection holes 135 may be disposed along the inner wall surface of the first injection hole 132 at intervals of 90 °.

Hereinafter, an operation of the plasma substrate processing apparatus 100 according to an embodiment of the present invention will be described.

First, the substrate 10 to be processed is introduced into the process chamber 110. In addition, a suitable source gas is supplied into the process chamber 110 according to the type of surface treatment process to be performed on the substrate 10.

Here, the source gas is appropriately selected according to the surface treatment process. In addition, the source gas may include a second source gas S2 including a reactant between the first source gas S1 and the substrate 10 to be excited in a plasma P state.

The source gas is supplied, and a high frequency power is applied to the electrode unit 150 to generate an electric field inside the process chamber 110.

That is, as the high frequency power is applied to the electrode unit 150, the plane of the electrode unit 150 is formed inside the process chamber 110, that is, the direction 10 perpendicular to the upper surface of the process chamber 110. An induction electric field is formed in the direction perpendicular to the. As the molecules of the source gas are accelerated and collide with each other in the electric field, the source gas molecules are decomposed into ions and radicals to form a plasma (P) state.

In the gas injection unit 130, the source gas is excited in the plasma P state in the process chamber 110, and the excited plasma P collides with the substrate 10 with high energy. Therefore, it is possible to reduce the consumption of source gas consumed during the surface treatment process.

In addition, since the ion or radical particles of the plasma P are provided to the additive substrate 10 through the gas injection unit 130, the plasma P particles are sufficiently transferred while the energy of the plasma P is sufficiently transferred. By directly colliding with the substrate 10, it is possible to prevent the substrate 10 from being damaged.

On the other hand, when the source gas is not diffused at a high speed, a difference in the density of the plasma (P) may occur in a portion near and far from the source gas supply unit 140. However, since the gas injection unit 130 has an injection hole structure capable of efficiently diffusing the plasma P, the gas injection unit 130 may generate a uniform plasma P on the substrate 10. Here, the gas injection unit 130 may more efficiently transfer plasma energy to the substrate 10 by generating a local plasma P2 in the injection hole. In addition, by generating the local plasma P2 as described above, it is possible to prevent the plasma P generated above the gas injection unit 130 from disappearing before reaching the substrate 10.

In addition, the gas injection unit 130 maintains the supply amount of the first source gas (S1) and the second source gas (S2) uniformly, thereby making the density of plasma uniform and the surface treatment result of uniform quality. Can be obtained. In detail, the second source gas S2 is connected to the first source gas by forming a connection flow path 135 connecting the flow path between the first source gas S1 and the second source gas S2. By partially flowing into the flow path of S1, the supply amount between the first source gas S1 and the second source gas S2 can be kept constant.

Therefore, the surface treatment process for the substrate 10, for example, the deposition of a thin film or the etching of the surface of the substrate 10 is performed uniformly, it is possible to obtain a good quality surface treatment results, productivity and reliability Can be improved.

In addition, as the gas injection unit 130 partitions the space inside the process chamber 110, the volume of the generating space of the plasma P in the process chamber 110 is reduced. And it is easy to improve the uniformity of the generation density of the said plasma P with respect to a small volume.

In this case, the efficiency and speed of the surface treatment process depend on the density of the plasma P, that is, the concentration of ions and radicals present in the plasma P. Therefore, as the density of the plasma P is uniformly provided, the decomposition of the source gas is accelerated, and the surface treatment rate of the substrate 10, for example, the deposition rate of the thin film or the etching of the substrate 10. It will speed up. In addition, since the plasma P is uniformly generated on the entire surface of the substrate 10, it is possible to obtain a surface treatment result of the substrate 10 of good quality and to improve productivity and reliability.

1 is a cross-sectional view showing a plasma substrate processing apparatus according to an embodiment of the present invention;

2 is an exploded perspective view for explaining a gas injection unit in the plasma substrate processing apparatus of FIG.

3 is a partial cross-sectional view of the gas injection unit of FIG.

4 is a cross-sectional view for describing an operation of the gas injection unit of FIG. 2.

<Explanation of symbols for the main parts of the drawings>

10: substrate 100: plasma substrate processing apparatus

110: process chamber 120: susceptor

130: gas injection unit 131: first plate

132: first injection hole 133: second plate

134: third injection hole 135: connection flow path

136: second injection hole 137: cavity

140: source gas supply unit 141: first source gas supply unit

142: second source gas supply unit 150: electrode unit

P: plasma P2: local plasma

S1: first source gas S2: second source gas

Claims (8)

In the gas injection unit of the plasma substrate processing apparatus for performing a surface treatment process of the substrate using a plasma, plate; A first injector formed through the plate and generating plasma therein; And A second injection unit formed to enable injection of the source gas independently of the first injection unit; Gas injection unit comprising a. The method of claim 1, The first injection part is formed through the plate, the gas injection unit, characterized in that a conical hole with a cross-sectional area is formed toward the downstream in the flow direction of the source gas. The method of claim 1, And the second injector includes a cavity formed inside the plate, and a plurality of holes formed to communicate the cavity with a lower portion of the plate. The method of claim 1, And a connection passage communicating the first and second injection parts such that the source gas inside the second injection part is introduced into the first injection part. The method of claim 4, wherein The connection flow path is a gas injection unit, characterized in that the source gas flowing along the first injection unit is formed so that the source gas in the second injection unit flows into the first injection unit. The method of claim 1, A first plate having a plurality of first injection holes formed therein; And A second injection hole coupled to a lower portion of the first plate to form a cavity in which a source gas flows, and a plurality of second injection holes communicating with the cavity and a third injection hole corresponding to the first injection hole; 2 plates; Gas injection unit comprising a. The method of claim 6, The third injection hole is a gas injection unit, characterized in that it has a conical shape in which the cross-sectional area increases toward the bottom. A process chamber in which the substrate is accommodated and which provides a plasma generating space; A susceptor provided in the process chamber to support the substrate; A source gas supply unit supplying a source gas to the process chamber; An electrode unit provided at one side of the process chamber to excite the source gas into a plasma state; And 9. The plasma substrate processing apparatus of claim 1, further comprising a gas injection unit of any one of claims 1 to 8, wherein the source gas is injected into the process chamber.

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