KR20090044950A - Photomask by coating on both sides and the method for fabricating the same - Google Patents
Photomask by coating on both sides and the method for fabricating the same Download PDFInfo
- Publication number
- KR20090044950A KR20090044950A KR1020070135855A KR20070135855A KR20090044950A KR 20090044950 A KR20090044950 A KR 20090044950A KR 1020070135855 A KR1020070135855 A KR 1020070135855A KR 20070135855 A KR20070135855 A KR 20070135855A KR 20090044950 A KR20090044950 A KR 20090044950A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- substrate
- pattern
- hard mask
- light blocking
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A photomask using the double-sided coating of the present invention and a method of forming the same include forming a phase inversion film on a first surface of a substrate and forming a light blocking film on a second surface of the substrate corresponding to the first surface; Forming a second hard mask film on the light blocking film while forming a first hard mask film on the phase inversion film; Patterning the first and second hard mask films to form a first hard mask film pattern for selectively exposing the phase shift film and a second hard mask film pattern for selectively exposing the light blocking film; Etching the phase shift film and the light blocking film by using the first and second hard mask film patterns as masks to form a phase shift film pattern and a light shield film pattern; And removing the first and second hard mask layer patterns.
Double sided coating, phase inversion film pattern, light blocking film pattern
Description
The present invention relates to photolithography, and more particularly, to a photomask using a double-sided coating and a method of forming the same.
A photomask serves to transfer a pattern including a light blocking film or a phase inversion film onto a wafer to form a desired pattern on the wafer. The photomask generally uses a binary mask that forms a light blocking film on a substrate and then etches it in a desired pattern so that transmitted light can pass through only the substrate and be transferred onto the wafer. However, as the degree of integration of semiconductor devices increases, a mask capable of forming a finer pattern on a wafer than a binary mask is required. Accordingly, a half-tone phase shift mask that can form a finer pattern on a wafer using a phase inversion material having a transmittance of several percent is proposed and applied.
1A to 1C are diagrams illustrating the phase inversion mask according to the prior art.
1A and 1B, in general, a blank mask for forming a phase inversion mask includes a
Specifically, referring to FIG. 1B, the
Next, as shown in FIG. 1C, a secondary photolithography process is performed on the
In the photomask fabrication process performed as described above, the mask fabrication step is increased as two or more photolithography processes are performed. However, if the mask fabrication step is increased in this way, defects may occur or foreign matter may occur in the middle of the fabrication process step, which may lead to defects in the final mask pattern. Accordingly, there is a problem that the mask pattern including the defect is transferred onto the wafer, which may cause a defect of the device.
In accordance with another aspect of the present invention, a method of forming a photomask using a double-sided coating may include forming a phase inversion film on a first surface of a substrate and forming a light blocking film on a second surface of the substrate corresponding to the first surface; Forming a second hard mask film on the light blocking film while forming a first hard mask film on the phase inversion film; Patterning the first and second hard mask layers to form a first hard mask layer pattern selectively exposing the phase shift film and a second hard mask layer pattern selectively exposing the light blocking layer; Etching the phase shift layer and the light blocking layer using the first and second hard mask layer patterns as masks to form a phase shift pattern and a light shield layer pattern; And removing the first and second hard mask layer patterns.
In the present invention, the substrate has a first side being the front side of the substrate, the second side being the rear side of the substrate or the first side being the rear side of the substrate, and the second side comprising the front side of the substrate.
The phase inversion film may be formed of a compound containing molybdenum (Mo), and the light blocking film may be formed including a chromium film (Cr).
It is preferable that the first and second hard mask films include a positive type photoresist film or a negative type photoresist film.
The light blocking layer pattern may expose a substrate in a portion corresponding to a region where the phase inversion layer pattern is formed.
The first and second hard mask layer patterns may be formed together using a photolithography process, or the first and second hard mask layer patterns may be sequentially formed.
Photomask using a double-sided coating according to an embodiment of the present invention, the substrate; A phase inversion film pattern formed on the first surface of the substrate and defining a first region in which a phase difference is generated from the transmitted light source and a second region in which the light source is transmitted; And a light blocking layer pattern formed on a second surface of the substrate corresponding to the first surface to block a light source that is transmitted and formed in a region other than the region corresponding to the first region.
In the present invention, the first surface is the front portion of the substrate, the second surface is the rear portion of the substrate or the first surface is the rear portion of the substrate, the second surface is composed of the front portion of the substrate.
The light blocking layer pattern exposes a substrate of a portion corresponding to the first region.
The phase shift pattern is made of a compound containing molybdenum (Mo), the light blocking layer comprises a chromium film (Cr).
A portion of the phase shift layer pattern formed thereon is transferred a dense pattern including a chip pattern, and a portion of the light shield layer pattern is formed a peripheral pattern including a bar code and an align key. This is transferred.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.
2 to 8 are views illustrating a photomask using a double-sided nose mask and a method of forming the same according to an embodiment of the present invention.
Referring to FIG. 2, a
Next, a primary
Referring to FIG. 3, an exposure process is performed on the first and second
Referring to FIG. 4, a development process is performed on the first and second
Referring to FIG. 5, a phase for selectively exposing the
Referring to FIG. 6, the light blocking layer pattern for selectively exposing the
Referring to FIG. 7, the first hard
Referring to FIG. 7 again, the photomask using the double-sided coating formed by this method is formed on the
Meanwhile, in the exemplary embodiment of the present invention, the
In the photomask using the double-sided coating according to the present invention and a method of forming the same, a phase inversion film is formed on one surface of a substrate made of a transparent material, and a light blocking film is formed on the other surface. Next, a mask film is formed on the phase inversion film and the light blocking film, and one photolithography process is performed to form a phase inversion film pattern and a light blocking film pattern defining the phase inversion area, the light blocking area, and the light transmitting area. Accordingly, in the conventional case, by reducing the photolithography process that is performed two or more times in one step, the conventional mask fabrication step may be reduced to five or less steps. As a result, defects in mask manufacturing, such as residues and foreign substances, caused by a plurality of photolithography processes may be minimized.
1A to 1C are diagrams illustrating the phase inversion mask according to the prior art.
2 to 8 are views shown to explain a photomask using a double-sided coating and a method of forming the same according to an embodiment of the present invention.
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070110501 | 2007-10-31 | ||
KR20070110501 | 2007-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20090044950A true KR20090044950A (en) | 2009-05-07 |
Family
ID=40855438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070135855A KR20090044950A (en) | 2007-10-31 | 2007-12-21 | Photomask by coating on both sides and the method for fabricating the same |
Country Status (1)
Country | Link |
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KR (1) | KR20090044950A (en) |
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2007
- 2007-12-21 KR KR1020070135855A patent/KR20090044950A/en not_active Application Discontinuation
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