KR20090044950A - Photomask by coating on both sides and the method for fabricating the same - Google Patents

Photomask by coating on both sides and the method for fabricating the same Download PDF

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Publication number
KR20090044950A
KR20090044950A KR1020070135855A KR20070135855A KR20090044950A KR 20090044950 A KR20090044950 A KR 20090044950A KR 1020070135855 A KR1020070135855 A KR 1020070135855A KR 20070135855 A KR20070135855 A KR 20070135855A KR 20090044950 A KR20090044950 A KR 20090044950A
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KR
South Korea
Prior art keywords
film
substrate
pattern
hard mask
light blocking
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KR1020070135855A
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Korean (ko)
Inventor
임문기
Original Assignee
주식회사 하이닉스반도체
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Publication of KR20090044950A publication Critical patent/KR20090044950A/en

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A photomask using the double-sided coating of the present invention and a method of forming the same include forming a phase inversion film on a first surface of a substrate and forming a light blocking film on a second surface of the substrate corresponding to the first surface; Forming a second hard mask film on the light blocking film while forming a first hard mask film on the phase inversion film; Patterning the first and second hard mask films to form a first hard mask film pattern for selectively exposing the phase shift film and a second hard mask film pattern for selectively exposing the light blocking film; Etching the phase shift film and the light blocking film by using the first and second hard mask film patterns as masks to form a phase shift film pattern and a light shield film pattern; And removing the first and second hard mask layer patterns.

Double sided coating, phase inversion film pattern, light blocking film pattern

Description

Photomask by coating on both sides and the method for fabricating the same}

The present invention relates to photolithography, and more particularly, to a photomask using a double-sided coating and a method of forming the same.

A photomask serves to transfer a pattern including a light blocking film or a phase inversion film onto a wafer to form a desired pattern on the wafer. The photomask generally uses a binary mask that forms a light blocking film on a substrate and then etches it in a desired pattern so that transmitted light can pass through only the substrate and be transferred onto the wafer. However, as the degree of integration of semiconductor devices increases, a mask capable of forming a finer pattern on a wafer than a binary mask is required. Accordingly, a half-tone phase shift mask that can form a finer pattern on a wafer using a phase inversion material having a transmittance of several percent is proposed and applied.

1A to 1C are diagrams illustrating the phase inversion mask according to the prior art.

1A and 1B, in general, a blank mask for forming a phase inversion mask includes a phase shifter layer 105 and an absorber layer 110 on one side of a substrate 100. ) And the primary hard mask film 112 are sequentially stacked. As such, the phase inversion film 105, the light blocking film 110, and the primary hard mask film 112 are stacked on one surface of the substrate 100 to perform patterning using a first photolithography process. As shown in FIG. 1B, the primary mask pattern 125 is formed on the substrate 100.

Specifically, referring to FIG. 1B, the substrate 100 is disposed in the exposure apparatus. Next, a first photolithography process including first exposure, first development, and first etching is performed to form a first mask pattern 125 on the substrate 100. The primary mask pattern 125 includes a light blocking film pattern 115 and a phase inversion film pattern 120. The primary hard mask film 112 is removed. Next, an inspection for detecting a defect caused when the primary mask pattern 125 is formed is performed. Subsequently, a repair process of correcting the detected defect is performed.

Next, as shown in FIG. 1C, a secondary photolithography process is performed on the primary mask pattern 125 to form a photomask including the secondary mask pattern 130. Specifically, a secondary photolithography process including secondary exposure and secondary development is performed on the primary mask pattern 125 (see FIG. 1B). Next, the light blocking film pattern 115 is selectively etched to selectively expose the phase inversion film pattern 120. By the first and second photolithography processes, a photomask having a phase inversion region a, a light blocking region b, and a light transmissive region c is formed on the substrate 100.

In the photomask fabrication process performed as described above, the mask fabrication step is increased as two or more photolithography processes are performed. However, if the mask fabrication step is increased in this way, defects may occur or foreign matter may occur in the middle of the fabrication process step, which may lead to defects in the final mask pattern. Accordingly, there is a problem that the mask pattern including the defect is transferred onto the wafer, which may cause a defect of the device.

In accordance with another aspect of the present invention, a method of forming a photomask using a double-sided coating may include forming a phase inversion film on a first surface of a substrate and forming a light blocking film on a second surface of the substrate corresponding to the first surface; Forming a second hard mask film on the light blocking film while forming a first hard mask film on the phase inversion film; Patterning the first and second hard mask layers to form a first hard mask layer pattern selectively exposing the phase shift film and a second hard mask layer pattern selectively exposing the light blocking layer; Etching the phase shift layer and the light blocking layer using the first and second hard mask layer patterns as masks to form a phase shift pattern and a light shield layer pattern; And removing the first and second hard mask layer patterns.

In the present invention, the substrate has a first side being the front side of the substrate, the second side being the rear side of the substrate or the first side being the rear side of the substrate, and the second side comprising the front side of the substrate.

The phase inversion film may be formed of a compound containing molybdenum (Mo), and the light blocking film may be formed including a chromium film (Cr).

It is preferable that the first and second hard mask films include a positive type photoresist film or a negative type photoresist film.

The light blocking layer pattern may expose a substrate in a portion corresponding to a region where the phase inversion layer pattern is formed.

The first and second hard mask layer patterns may be formed together using a photolithography process, or the first and second hard mask layer patterns may be sequentially formed.

Photomask using a double-sided coating according to an embodiment of the present invention, the substrate; A phase inversion film pattern formed on the first surface of the substrate and defining a first region in which a phase difference is generated from the transmitted light source and a second region in which the light source is transmitted; And a light blocking layer pattern formed on a second surface of the substrate corresponding to the first surface to block a light source that is transmitted and formed in a region other than the region corresponding to the first region.

In the present invention, the first surface is the front portion of the substrate, the second surface is the rear portion of the substrate or the first surface is the rear portion of the substrate, the second surface is composed of the front portion of the substrate.

The light blocking layer pattern exposes a substrate of a portion corresponding to the first region.

The phase shift pattern is made of a compound containing molybdenum (Mo), the light blocking layer comprises a chromium film (Cr).

A portion of the phase shift layer pattern formed thereon is transferred a dense pattern including a chip pattern, and a portion of the light shield layer pattern is formed a peripheral pattern including a bar code and an align key. This is transferred.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

2 to 8 are views illustrating a photomask using a double-sided nose mask and a method of forming the same according to an embodiment of the present invention.

Referring to FIG. 2, a phase shifter layer 205 is formed on a front side of a substrate 200, and an absorber layer 215 is formed on a back side of a substrate 200. To form. The substrate 200 includes quartz and is made of a transparent material that can transmit light. The phase inversion film 205 formed on the front surface of the substrate 200 is made of a material capable of inverting the phase of light irradiated onto the substrate 200 in a subsequent exposure process. The phase shift film 205 may include a compound containing molybdenum (Mo), for example, molybdenum silicon nitride (MoSiON). The light blocking film 215 formed on the rear surface of the substrate 200 blocks light transmitted through the substrate 200 in an exposure process to be performed later. The light blocking film 215 may include a chromium film Cr. At this time, in the exemplary embodiment of the present invention, the phase inversion film 205 is formed on the front surface of the substrate 200, and the light blocking film 215 is formed on the rear surface of the substrate 200, but is not limited thereto. That is, the light blocking film 215 may be formed on the front surface of the substrate 200, and the phase inversion film 205 may be formed on the rear surface of the substrate 200.

Next, a primary hard mask film 210 is formed on the phase inversion film 205 and a secondary hard mask film 220 is formed on the light blocking film 215. The first and second hard mask layers 210 and 220 may serve as etch masks in an exposure process, and may be formed as photoresist layers. The photoresist film may be a positive-type photoresist material in which a portion irradiated with light is removed by a developer during exposure. Alternatively, the photoresist may be formed of a negative-typed photoresist material in which a portion to which light is radiated remains.

Referring to FIG. 3, an exposure process is performed on the first and second hard mask layers 210 and 220 to selectively denature regions of the hard mask layers. Specifically, the substrate 200 on which the primary and secondary hard mask layers 210 and 220 are formed is loaded onto an exposure apparatus (not shown). Next, as indicated by arrows in the figure, light is irradiated onto the primary and secondary hard mask films 210 and 220 of the front and rear portions of the substrate 200. Then, the light irradiated onto the substrate 200 causes a photochemical reaction to the exposed areas of the first and second hard mask films 210 and 220, so that the solubility of the light is irradiated in the irradiated portion 225 and the unirradiated portion 230. Cause a difference. Here, the exposure apparatus may irradiate light to the primary and secondary hard mask films 210 and 220 at the same time, or irradiate light to the primary hard mask film 210 and then sequentially irradiate the secondary hard mask film 220. Can be.

Referring to FIG. 4, a development process is performed on the first and second hard mask films 210 and 220 subjected to the exposure process to partially expose the phase inversion film 205 and the light blocking film 215. The hard mask film pattern 235 and the second hard mask film pattern 240 are formed. Specifically, the developer is supplied onto the substrate 200 subjected to the exposure process to remove the primary and secondary hard mask films 210 and 220 of the region 225 (see FIG. 3) where the difference in solubility is generated depending on the exposure. do. Then, the first hard mask layer pattern includes a first opening 245a exposing the phase inversion film 205 of the front surface of the substrate 100 and a second opening 245b exposing the surface of the light blocking film 215 of the rear surface. 235 and a secondary hard mask film pattern 240 are formed. In this case, all of the region 245a corresponding to the phase inversion region to be formed on the entire surface of the substrate 200 is exposed in the second opening 245b of the secondary hard mask layer pattern 240.

Referring to FIG. 5, a phase for selectively exposing the substrate 200 by first etching the phase inversion layer 205 exposed from the front surface of the substrate 200 using the first hard mask layer pattern 235 as an etch mask. The reverse film pattern 250 is formed.

Referring to FIG. 6, the light blocking layer pattern for selectively exposing the substrate 200 by second etching the light blocking layer 215 exposed from the rear surface of the substrate 200 using the second hard mask layer pattern 240 as an etching mask. Form 255.

Referring to FIG. 7, the first hard mask layer pattern 235 and the second hard mask layer pattern 240 are removed. Accordingly, the phase inversion region 260 and the first light-transmitting region 270 are defined by the phase inversion film pattern 250 on the front surface of the substrate 200, and the light blocking layer pattern 255 is formed on the rear surface of the substrate 200. The light blocking area 275 and the second light transmitting area 280 are defined by the. In this case, the light blocking layer pattern 255 is removed from the rear side of the substrate 200 corresponding to the phase inversion region 260 defined by the phase inversion layer pattern 250 formed on the front side of the substrate 200 to thereby transmit the second light. Region 280 is defined. At this time, when transferring onto the wafer, a dense pattern including a chip pattern is transferred by the phase inversion film pattern 250 formed on the front surface of the substrate 200, and then transferred to the rear surface of the substrate 200. In the area A defined by the formed light blocking layer pattern 255, a peripheral pattern including a bar code and an alignment key is transferred during the exposure process of transferring the pattern to the wafer.

Referring to FIG. 7 again, the photomask using the double-sided coating formed by this method is formed on the transparent substrate 200 and the first surface of the transparent substrate 200 while irradiating a light source toward the transparent substrate. A phase inversion film pattern 250 and a transparent substrate defining a phase inversion region (or first region) 260 in which a phase difference is generated from the light source and a first light transmission region (or second region) 270 that transmits the light source. Light formed on the second surface of the transparent substrate 200 corresponding to the first surface of the substrate 200 except for the region corresponding to the phase inversion region 260 to block the light source transmitted on the transparent substrate 200. The barrier layer pattern 255 is formed. The light blocking region 275 is formed in the region where the light blocking layer pattern 255 is formed, and the light blocking region 275 blocking the irradiated light source is disposed. The second surface corresponding to the phase inversion layer pattern 250 of the first surface is formed of the transparent substrate 200. The second light transmitting area 280 is disposed to be exposed.

Meanwhile, in the exemplary embodiment of the present invention, the phase inversion film 205 is formed on the entire first surface of the transparent substrate 200, and the light blocking film 210 is formed on the entire second surface of the transparent substrate 200. A method of patterning the phase inversion film 205 and the light blocking film 210 has been described, but is not limited thereto. That is, as shown in FIG. 8, the phase inversion film 305 is selectively formed only in the region where the phase inversion region is to be formed on the first surface of the transparent substrate 300, and the region in which the light shielding region is to be formed in the second surface. The light blocking layer 310 may be selectively formed only. As such, when the phase inversion film 305 and the light blocking film 310 are selectively formed according to regions, process steps may be reduced. Here, the portion not described in the drawing is the photoresist film 315.

In the photomask using the double-sided coating according to the present invention and a method of forming the same, a phase inversion film is formed on one surface of a substrate made of a transparent material, and a light blocking film is formed on the other surface. Next, a mask film is formed on the phase inversion film and the light blocking film, and one photolithography process is performed to form a phase inversion film pattern and a light blocking film pattern defining the phase inversion area, the light blocking area, and the light transmitting area. Accordingly, in the conventional case, by reducing the photolithography process that is performed two or more times in one step, the conventional mask fabrication step may be reduced to five or less steps. As a result, defects in mask manufacturing, such as residues and foreign substances, caused by a plurality of photolithography processes may be minimized.

1A to 1C are diagrams illustrating the phase inversion mask according to the prior art.

2 to 8 are views shown to explain a photomask using a double-sided coating and a method of forming the same according to an embodiment of the present invention.

Claims (11)

Forming a phase inversion film on the first surface of the substrate and forming a light blocking film on the second surface of the substrate corresponding to the first surface; Forming a second hard mask film on the light blocking film while forming a first hard mask film on the phase inversion film; Patterning the first and second hard mask layers to form a first hard mask layer pattern selectively exposing the phase shift film and a second hard mask layer pattern selectively exposing the light blocking layer; Etching the phase shift layer and the light blocking layer using the first and second hard mask layer patterns as masks to form a phase shift pattern and a light shield layer pattern; And Forming a photomask using a double-sided coating comprising the step of removing the first and second hard mask film pattern. The method of claim 1, The method of claim 1, wherein the first surface of the substrate is the front surface of the substrate, the second surface of the substrate is the rear surface of the substrate, or the first surface is the rear surface of the substrate, and the second surface is the front surface of the substrate. The method of claim 1, The phase inversion film is formed of a compound containing molybdenum (Mo), the light shielding film is a photomask forming method using a double-sided coating formed by including a chromium film (Cr). The method of claim 1, The first and second hard mask film is a photomask forming method using a double-sided coating formed by including a positive type photoresist film or a negative type photoresist film. The method of claim 1, The light blocking layer pattern is a photomask forming method using a double-sided coating that exposes the substrate of the portion corresponding to the region where the phase inversion film pattern is formed. The method of claim 1, The first and second hard mask film patterns are formed together using a photolithography process or a photomask forming method using double-sided coating to form the first and second hard mask film patterns sequentially. Board; A phase inversion film pattern formed on the first surface of the substrate and defining a first region in which a phase difference is generated from the transmitted light source and a second region in which the light source is transmitted; And The photomask using a double-sided coating on the second surface of the substrate corresponding to the first surface and including a light blocking film pattern formed in the remaining regions other than the region corresponding to the first region to block the transmitted light source. The method of claim 7, wherein The substrate is a photomask using a double-sided coating wherein the first side is the front side of the substrate, the second side is the rear side of the substrate, or the first side is the rear side of the substrate, and the second side is the front side of the substrate. The method of claim 7, wherein The light blocking layer pattern is a photomask using a double-sided coating to expose the substrate of the portion corresponding to the first region. The method of claim 7, wherein The phase inversion film pattern is made of a compound containing molybdenum (Mo), the light blocking film is a photomask using a double-sided coating containing a chromium film (Cr). The method of claim 7, wherein A portion of the phase shift layer pattern formed thereon is transferred a dense pattern including a chip pattern, and a portion of the light shield layer pattern is formed a peripheral pattern including a bar code and an align key. Photomask using the two-sided coating to be transferred.
KR1020070135855A 2007-10-31 2007-12-21 Photomask by coating on both sides and the method for fabricating the same KR20090044950A (en)

Applications Claiming Priority (2)

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KR1020070110501 2007-10-31
KR20070110501 2007-10-31

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