KR20090020456A - 알루미늄 인터커넥트의 제어된 표면 산화 - Google Patents

알루미늄 인터커넥트의 제어된 표면 산화 Download PDF

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Publication number
KR20090020456A
KR20090020456A KR1020070135385A KR20070135385A KR20090020456A KR 20090020456 A KR20090020456 A KR 20090020456A KR 1020070135385 A KR1020070135385 A KR 1020070135385A KR 20070135385 A KR20070135385 A KR 20070135385A KR 20090020456 A KR20090020456 A KR 20090020456A
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KR
South Korea
Prior art keywords
chamber
argon
sputtering
aluminum
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020070135385A
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English (en)
Korean (ko)
Inventor
밀러 에이. 알렌
아쉬시 보드케
용 카오
안토니 씨-티 챈
지안밍 푸
쳉 수
야수노리 요코야마
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090020456A publication Critical patent/KR20090020456A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020070135385A 2007-08-22 2007-12-21 알루미늄 인터커넥트의 제어된 표면 산화 Ceased KR20090020456A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/843,508 US20090050468A1 (en) 2007-08-22 2007-08-22 Controlled surface oxidation of aluminum interconnect
US11/843,508 2007-08-22

Publications (1)

Publication Number Publication Date
KR20090020456A true KR20090020456A (ko) 2009-02-26

Family

ID=40381134

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070135385A Ceased KR20090020456A (ko) 2007-08-22 2007-12-21 알루미늄 인터커넥트의 제어된 표면 산화

Country Status (5)

Country Link
US (1) US20090050468A1 (https=)
JP (1) JP2009065148A (https=)
KR (1) KR20090020456A (https=)
CN (1) CN101373735B (https=)
TW (1) TW200909601A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102568991B (zh) * 2010-12-17 2014-09-24 中芯国际集成电路制造(上海)有限公司 反应腔的输气管道系统及其控制方法
CN102586737A (zh) * 2012-03-09 2012-07-18 上海先进半导体制造股份有限公司 铝铜膜的物理气相沉积方法
US20160013288A1 (en) * 2014-07-09 2016-01-14 United Microelectronics Corp. Method of forming a metal gate structure
US10559483B2 (en) * 2016-08-10 2020-02-11 Lam Research Corporation Platform architecture to improve system productivity
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
CN108624844B (zh) * 2017-03-17 2019-11-12 株洲中车时代电气股份有限公司 一种晶圆背面金属薄膜及其制备方法
CN108132496B (zh) * 2017-12-28 2020-09-18 深圳市华星光电技术有限公司 金属栅偏光片及其制作方法、液晶面板及液晶显示器
JP2019145654A (ja) * 2018-02-20 2019-08-29 エイブリック株式会社 半導体製造装置および半導体装置の製造方法
KR102821720B1 (ko) * 2019-09-16 2025-06-18 삼성전자주식회사 스퍼터링 장치 및 그를 이용한 자기 기억 소자의 제조 방법
US11674216B2 (en) * 2019-12-24 2023-06-13 Applied Materials, Inc. Methods and apparatus for depositing aluminum by physical vapor deposition (PVD) with controlled cooling
US20250171887A1 (en) * 2023-11-29 2025-05-29 Applied Materials, Inc. Stress control method for physical vapor deposition of aluminum

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183781A (en) * 1978-09-25 1980-01-15 International Business Machines Corporation Stabilization process for aluminum microcircuits which have been reactive-ion etched
US4368220A (en) * 1981-06-30 1983-01-11 International Business Machines Corporation Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5462892A (en) * 1992-06-22 1995-10-31 Vlsi Technology, Inc. Semiconductor processing method for preventing corrosion of metal film connections
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5935395A (en) * 1995-11-08 1999-08-10 Mitel Corporation Substrate processing apparatus with non-evaporable getter pump
US6602348B1 (en) * 1996-09-17 2003-08-05 Applied Materials, Inc. Substrate cooldown chamber
US5913146A (en) * 1997-03-18 1999-06-15 Lucent Technologies Inc. Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6177350B1 (en) * 1998-04-14 2001-01-23 Applied Materials, Inc. Method for forming a multilayered aluminum-comprising structure on a substrate
JP3125745B2 (ja) * 1998-04-30 2001-01-22 日本電気株式会社 半導体装置の製造方法
US6287958B1 (en) * 1999-06-03 2001-09-11 Micron Technology, Inc. Method of manufacturing a self-aligned etch stop for polycrystalline silicon plugs on a semiconductor device
US20030116427A1 (en) * 2001-08-30 2003-06-26 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6747852B2 (en) * 2001-08-17 2004-06-08 International Business Machines Corporation Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer
US6649537B1 (en) * 2001-11-19 2003-11-18 Lsi Logic Corporation Intermittent pulsed oxidation process
WO2003092084A1 (en) * 2002-04-23 2003-11-06 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same

Also Published As

Publication number Publication date
JP2009065148A (ja) 2009-03-26
CN101373735B (zh) 2011-07-06
TW200909601A (en) 2009-03-01
US20090050468A1 (en) 2009-02-26
CN101373735A (zh) 2009-02-25

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