KR20090015062A - Sealing agent for cof mounting and semiconductor component sealed by using the same - Google Patents

Abstract

Disclosed is a sealing agent for COF mounting, which enables to obtain a highly reliable semiconductor component. Also disclosed is a highly reliable semiconductor component. Specifically disclosed is a sealing agent for COF mounting, which contains an epoxy resin (A), an acid anhydride curing agent (B), and an imidazole and/or triazine curing accelerator (C). The sealing agent for COF mounting contains 0.6-10 parts by weight of the component (C) per 100 parts by weight of the total of the components (A), (B) and (C). This sealing agent for COF mounting has a gel time at 150°C of 40-130 seconds, and a temperature dependency of gelation of from-5 to-13.

Description

COF mounting encapsulant and semiconductor component encapsulated using this {SEALING AGENT FOR COF MOUNTING AND SEMICONDUCTOR COMPONENT SEALED BY USING THE SAME}

The present invention relates to an encapsulant for chip-on-film (COF) mounting and a semiconductor component encapsulated using the encapsulant.

As the degree of integration of semiconductors increases, the encapsulation of semiconductors is shifted from a chip-on-board method such as a pin grid array that conducts the semiconductor chip and the substrate by wire bonding, to a flip-chip method that conducts the bumps between the semiconductor chip and the substrate. have. In the flip chip system, in order to seal the gap between a chip | tip and a board | substrate, the solvent-free one-component epoxy resin composition is used as a sealing agent (for example, refer patent document 1, patent document 2). In general, a large amount of inorganic fillers such as silica is incorporated into these encapsulants in order to prevent breakage of bumps due to thermal stress.

On the other hand, the substrate material has shifted from a conventional hard glass epoxy substrate to a flexible film substrate. Recently, COF mounting has been actively adopted as a mounting method in the case of using a film substrate. COF is generally mounted by connecting Au bumps of electrodes of semiconductor chips to conductor wirings on film substrates, and then injecting and curing the sealing agent into gaps between the film substrates and semiconductor chips. In COF mounting, the sealing agent is injected and temporarily hardened (100 to 180 ° C, 3 minutes or more, less than 30 minutes) using a reel-to-reel, followed by the main curing process (100). To 180 ° C. for about 30 to 480 minutes). According to COF mounting, there exists an advantage that the pitch of the bump of a semiconductor chip and the space | interval of a semiconductor chip and a board | substrate can be narrowed than before. However, when using the conventional sealing agent in which the inorganic filler was mix | blended in large quantity, there existed a problem which does not penetrate into a clearance gap.

On the other hand, the sealing agent suitable for COF mounting is proposed, without containing an inorganic filler. For example, a method of lowering the tensile modulus of elasticity and improving adhesion to a film substrate has been proposed (Patent Document 3), but even in the case of using these, desorption when curing the air bubbles and the encapsulant that enter together when the encapsulant is poured therein Since voids may occur, it is difficult to obtain highly reliable semiconductor parts (see Patent Document 4, for example).

In addition, about the process of COF mounting, the film substrate with a semiconductor chip in which the sealing agent injection | pouring heated by temporary hardening was stored at room temperature until the batch process in this hardening, and a temperature fell, The film substrate was unable to follow the level difference with the generated electrode, resulting in detachment, and it became remarkable as the electrode pitch became narrower to compromise the reliability of the obtained COF package.

Patent Document 1: Japanese Unexamined Patent Publication No. 2002-097257

Patent Document 2: Japanese Unexamined Patent Publication No. 2001-279058

Patent Document 3: Japanese Unexamined Patent Publication No. 2002-302534

Patent Document 4: Japanese Unexamined Patent Publication No. 2004-221319

An object of the present invention is to provide a COF mounting encapsulant and a highly reliable semiconductor component capable of solving the above problems and obtaining a highly reliable semiconductor component.

This invention contains (A) epoxy resin, (B) acid anhydride type hardening | curing agent, and (C) imidazole type and / or triazine type hardening accelerator, and totals (A) component, (B) component, and (C) component It relates to a COF packaging sealing agent whose component (C) is 0.6-10 weight part with respect to 100 weight part.

Moreover, this invention contains (A) epoxy resin, (B) acid anhydride type hardening | curing agent, and (C) imidazole type and / or triazine type hardening accelerator, the gel time in 150 degreeC is 40-130 second, The temperature dependence of gelation relates to a COF mounting encapsulant.

Moreover, this invention is a process of (1) connecting the electrode of a semiconductor chip to the electrode of a film substrate, (2) injecting the said COF mounting sealing agent between a film substrate and a semiconductor chip, and (3) for COF mounting And preliminarily curing the film substrate on which the encapsulant injection is completed is mounted on the film substrate at 100 to 180 ° C. for at least 3 minutes and less than 30 minutes, and then cooling the film substrate to 100 to 180 ° C. for 30 to 480 minutes. It relates to a method for manufacturing a semiconductor component.

Moreover, this invention relates to the semiconductor component sealed using the said COF mounting sealing agent, and the semiconductor component manufactured by the said manufacturing method.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which measured the gel time in 120, 130, 140, and 150 degreeC about Examples 1-4 and a comparative example, and plotted the relationship between temperature (absolute temperature) and gel time.

Implement the invention  Best practice for

In 1st Embodiment, this invention contains (A) epoxy resin, (B) acid anhydride type hardening | curing agent, and (C) imidazole type and / or triazine type hardening accelerator, (A) component and (B) component And (C) component is 0.6-10 weight part with respect to a total of 100 weight part of (C) component. The COF mounting encapsulant of the present invention is usually liquid at room temperature. In addition, in this specification, a liquid phase at normal temperature means showing fluidity at 10-35 degreeC.

(A) epoxy resin

The component (A) is not particularly limited as long as it is an epoxy compound having two or more epoxy groups in one molecule. Although the epoxy resin is preferably liquid at room temperature, even if it is solid at room temperature, it may be used by diluting with another liquid epoxy resin or diluent to show the liquid at room temperature.

Specifically, bisphenol A type epoxy resin, fluorinated bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, novolak type epoxy resin, alicyclic epoxy resin, naphthalene type epoxy resin, ether type or polyether Type epoxy resin, an oxirane ring containing polybutadiene, silicone epoxy copolymer resin, etc. are illustrated.

In particular, the epoxy resin that is liquid at room temperature has an average molecular weight of about 400 or less of a bisphenol A epoxy resin; Branched polyfunctional bisphenol A epoxy resins, such as p- glycidyloxyphenyl dimethyl tris bisphenol A diglycidyl ether; Bisphenol F type epoxy resin; The average molecular weight of the phenol novolac type epoxy resin is about 570 or less; Vinyl (3,4-cyclohexene) dioxide, 3,4-epoxycyclohexyl carboxylic acid (3,4-epoxycyclohexyl) methyl, adipic bis (3,4-epoxy-6-methylcyclohexylmethyl), 2- (3,4-epoxycyclohexyl) 5,1- spiro (3,4-epoxycyclohexyl) aliphatic epoxy resins such as m- dioxane; Biphenyl type epoxy resins such as 3,3 ', 5,5'-tetramethyl-4,4'-diglycidyloxybiphenyl; Glycidyl ester epoxy resins such as hexahydrophthalic acid diglycidyl, 3-methylhexahydrophthalic acid diglycidyl, and hexahydroterephthalic acid diglycidyl; Glycidylamine type epoxy such as diglycidyl aniline, diglycidyl toluidine, triglycidyl- p -aminophenol, tetraglycidyl- m- xylenediamine, tetraglycidylbis (aminomethyl) cyclohexane Suzy; And hydantoin type epoxy resins such as 1,3-diglycidyl-5-methyl-5-ethylhydantoin; Naphthalene ring containing epoxy resin is illustrated. In addition, epoxy resins having a silicone skeleton such as 1,3-bis (3-glycidoxypropyl) -1,1,3,3-tetramethyldisiloxane may also be used. Furthermore, diepoxide compounds, such as (poly) ethylene glycol diglycidyl ether, (poly) propylene glycol diglycidyl ether, butanediol glycidyl ether, neopentyl glycol diglycidyl ether; Triepoxide compounds, such as a trimethylol propane triglycidyl ether and glycerin triglycidyl ether, etc. are also illustrated.

The epoxy resin preferably contains an epoxy resin having three or more epoxy groups in terms of crosslinking density and curability, and preferably contains an epoxy resin having three epoxy groups in that the viscosity can be relatively small.

As an epoxy resin with three epoxy groups, the epoxy resin in which the benzene ring of diglycidyl aniline was substituted by the glycidyl group is mentioned, for example. Specifically, formula (1):

(In formula, R is a hydrogen, a methyl group, or an ethyl group.) It is an epoxy resin represented, More specifically, Formula (1 '):

The epoxy resin shown by is mentioned.

It is also possible to use solid to ultrahigh viscosity epoxy resin together at normal temperature, and such a high molecular weight bisphenol-A epoxy resin, a novolak epoxy resin, tetrabromobisphenol-A epoxy resin, etc. are illustrated. These may be used in combination with epoxy resins and / or diluents which are liquid at room temperature, and with adjusting fluidity.

When using a solid to ultrahigh viscosity epoxy resin at room temperature, low viscosity epoxy resins such as (poly) ethylene glycol diglycidyl ether, (poly) propylene glycol diglycidyl ether, butane diol glycy Diepoxide compounds such as dil ether and neopentyl glycol diglycidyl ether; It is preferable to combine with triepoxide compounds, such as trimethylolpropane triglycidyl ether and glycerin triglycidyl ether.

If a diluent is used, either a non-reactive diluent or a reactive diluent can be used, but a reactive diluent is preferred. In the present specification, the reactive diluent refers to a compound having a relatively low viscosity at room temperature having one epoxy group. Depending on the purpose, other reactive polymers such as alkenyl groups such as vinyl and aryl; Or you may have unsaturated carboxylic acid residues, such as acryloyl and methacryloyl. As such a reactive diluent, n- butyl glycidyl ether, 2-ethylhexyl glycidyl ether, phenyl glycidyl ether, credyl glycidyl ether, ps- butylphenyl glycidyl ether, styrene oxide, ( alpha)- Monoepoxide compounds such as pinene oxide; Monoepoxide compounds having other functional groups such as aryl glycidyl ether, glycidyl methacrylate, 1-vinyl-3,4-epoxycyclohexane, and the like.

An epoxy resin may be used independently and may be used together 2 or more types. The epoxy resin itself is preferably liquid at room temperature. Preferably, 30 weight% or more is an epoxy resin represented by Formula (1) in the whole epoxy resin, More preferably, it is 40-100 weight%. The combination of the epoxy resin represented by Formula (1), bisphenol-A epoxy resin, and / or bisphenol F-type epoxy resin is especially preferable.

(B) Acid Anhydride Curing Agent

As the component (B), methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, alkylated tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhymic acid anhydride, succinic anhydride substituted with alkenyl, methylnajik An acid anhydride type, a hardening agent of glutaric anhydride type, etc. are illustrated.

Among them, 3,4-dimethyl-6- (2-methyl-1-propenyl) -1,2,3,6-tetrahydrophthalic anhydride and 1-isopropyl-4-methyl-bicyclo [2.2.2 ] Octo-5-ene-2,3-dicarboxylic acid anhydride, norbornane-2,3-dicarboxylic acid anhydride, methylnorbornane-2,3-dicarboxylic acid anhydride, hydrogenated methylnaziric anhydride, Acid anhydrides selected from succinic anhydrides substituted with alkenyl groups and diethylglutaric anhydride are preferred, and more preferably 3,4-dimethyl-6- (2-methyl-1-propenyl) -1,2,3 , 6-tetrahydrophthalic anhydride, diethylglutaric anhydride or formula (2):

 In the formula, R is a succinic anhydride substituted with alkenyl represented by a linear C8 to C15 alkenyl group.

An acid anhydride type hardening | curing agent may be used independently and may be used together 2 or more types.

(C) imidazole series and / or triazine series curing accelerator

As imidazole series hardening accelerator of (C) component, 2-methylimidazole, 2-undecyl imidazole, 2-heptadecyl imidazole, 2-ethyl-4- methyl imidazole, 2-phenyl imida Sol, 2-phenyl-4-methyl imidazole can be illustrated. Moreover, 2, 4- diamino-6- [2'- methylimidazole- (1 ')] ethyl- s- triazine etc. are mentioned as a triazine type hardening accelerator. These may be used independently and may use 2 or more types together.

In 1st Embodiment, the compounding quantity of (C) component is 0.6-10 weight part with respect to a total of 100 weight part of (A) component, (B) component, and (C) component, It is characterized by the above-mentioned. Although the non-filler type sealing agent considers the influence on a characteristic normally etc., and a hardening accelerator is mix | blended about 0.2-0.4 weight part, in the present invention, when it mix | blended in a large amount, unexpected generation | occurrence | production of a void is suppressed unexpectedly. It was found that good adhesion with the film substrate can be obtained. The compounding quantity of (C) component is preferably 1.5-5 weight part.

The compounding ratio of (A) component and (B) component is not specifically limited, The acid anhydride type hardening | curing agent of (B) component can be 0.6-1.2 mol with respect to 1 mol of epoxy groups in (A) component, Preferably it is 0.65- 1.0 moles.

The sealing agent for COF mounting of this invention may contain a coloring agent (for example, carbon black, dye etc.), a flame retardant, an ion trap agent, an antifoamer, a leveling agent, etc. as needed in the range which does not impair the effect of this invention. . Moreover, in order to improve the adhesiveness to a board | substrate, 3-glycidoxy propyl trimethoxysilane, 3-glycidoxy propyl (methyl) dimethoxysilane, 2- (2, 3- epoxy cyclohexyl) ethyl trimethoxy Silane coupling agents, such as a silane, 3-methacryloxypropyl trimethoxysilane, 3-aminopropyl triethoxysilane, and 3- (2-aminoethyl) aminopropyl trimethoxysilane, etc. may be contained. In addition, when using a solid material, it is good to use the thing whose size is the maximum length of 1 micrometer or less.

The COF mounting encapsulant of the present invention essentially contains no solvent. In essence, free of solvent means that the solvent is 0.2 wt% or less, preferably 0.05 wt% or less. Examples of the solvent include methyl isobutyl ketone, methyl ether ketone, acetyl ketone, propylene glycol monoethyl ether acetate and 3-methyl-3-methoxybutyl acetate.

In addition, the sealing agent for COF mounting of this invention is a non-filler type sealing agent which does not contain inorganic fillers, such as a silica (except pigments, such as carbon black), essentially. In essence, free of inorganic fillers means that the inorganic filler is 5% by weight or less, preferably 3% by weight or less, more preferably 0% by weight. Thereby, even if the clearance gap and bump gap of a semiconductor chip and a film board | substrate are narrow, a sealing agent can fully penetrate.

The sealing agent for COF mounting of the present invention has a viscosity (25 ° C., an E-type viscometer, a rotational speed of 10 rpm) of about 100 to 2000 mPa · S, in view of the immersion property in the sealing.

Although the manufacturing method of the COF mounting sealing agent of this invention is not specifically limited, For example, a raw material is mix | blended by predetermined compounding, a planetary type stirrer, a dissolver, a bead mill, a Leicaigi, a pot mill, a 3-roll mill, a rotary mixer, 2 It can manufacture by putting into a mixer, such as an axial mixer, and mixing.

In addition, it is good to remove impurities inevitably generated from raw materials, subsidiary materials, manufacturing processes and the like. Filtration using a screen such as nylon, filtration using micropores, separation by ultracentrifuge, etc. are not limited, but it is extremely necessary to remove impurities having a size of 1/2 or more of the electrode pitch of the film substrate. good.

In 2nd Embodiment, this invention contains (A) epoxy resin, (B) acid anhydride type hardening | curing agent, and (C) imidazole type and / or triazine type hardening accelerator, The gel time in 150 degreeC is 40 It is -130 second, and the temperature dependence of gelation relates to the sealing agent for COF packaging whose -5 to -13.

In the present invention, the temperature dependence of gelation is a slope when the gel time is measured at 120, 130, 140 and 150 ° C with respect to the encapsulant, and the relationship between the temperature and the gel time is approximated by the least square method. The temperature dependence of gelation is usually negative, and the higher the temperature, the shorter the gel time. A large absolute value means a large change in gel time with temperature.

Gel time is taken as the value measured by the following method which referred to JISK5600-9-1. On the hot plate of predetermined temperature, 5 mg + 1 mg of COF mounting sealants are supplied, circled by a stirring rod, stirred and thickened. In the case where the stir bar is lifted off while stirring from the point of supply on the hot plate, the time until the stringiness becomes 5 mm or less is taken as the gel time. The COF mounting encapsulant 5 mg ± 1 mg means that the COF mounting encapsulant supplied on the hot plate is 5 mg in principle, but an error of up to 1 mg before and after is allowed.

When the gel time at 150 ° C. is 40 to 130 seconds, and the temperature dependency of gelation is in the range of -5 to -13, the curing rate and curing shrinkage of the encapsulant act in the direction of suppressing the generation of voids, It is thought that favorable adhesiveness with a film substrate can be obtained. The gel time is preferably 50 to 80 seconds, and the temperature dependence of gelation is preferably -6 to -8.

In the sealing agent for COF mounting of 2nd Embodiment, the example of (A) component, (B) component, and (C) component is the same as that of 1st Embodiment.

In addition, the compounding quantity of (C) component is easy to reflect on activation energy, and when another component is the same, when there is much compounding quantity of (C) component, activation energy generally tends to become large. It is preferable to make the compounding quantity of (C) component into 0.6-10 weight part with respect to a total of 100 weight part of (A) component, (B) component, and (C) component, More preferably, it is 1.5-5 weight part. About the compounding ratio of (A) component and (B) component, it is the same as that of 1st Embodiment.

In addition, the example of an arbitrary component, the viscosity of the sealing agent for COF mounting, and a manufacturing method are the same as that of 1st Embodiment. Moreover, it is the same as that of 1st Embodiment that the sealing agent does not contain a solvent essentially and is a non-filler type.

The sealing agent for COF mounting of this invention can be inject | poured from the side using a dispenser, etc. in the space | interval of the semiconductor chip and board | substrate which were mounted on the film board | substrate, for example, and can seal it. Injection can be carried out in a temperature range of 25 to 130 ° C. The gap is usually 5 to 20 µm in COF mounting, but is also 5 µm or less, for example, 3 to 5 µm. The bump pitch is usually 30 to 50 µm, but can also be 30 µm or less, for example, 10 to 30 µm.

Curing conditions can be varied widely. For example, the main curing may be carried out by heating at 100 to 180 ° C, preferably 120 to 170 ° C for a time of 30 to 480 minutes. However, if it hardens | cures, it is not limited to this hardening temperature, What is necessary is just low temperature (for example, 65 degreeC or more). Moreover, after hardening (temporary hardening) until fluidity disappears using a continuous hardening furnace, it is advantageous at the point of productivity if the quantity is collectively hardened (main hardening) in a batch type hardening furnace. Temporary hardening can be performed by heating at 100-180 degreeC, Preferably it is 120-150 degreeC for 3 minutes or more and less than 30 minutes. Moreover, although voids are easy to generate | occur | produce in the stage of temporary hardening, it can be considered that the sealing agent for COF mounting of this invention becomes possible to suppress the generation | occurrence | production of voids with respect to hardened | cured material through suppression of a void generation at this stage. .

Specifically, as a manufacturing method of a semiconductor component using the sealing agent for COF mounting of this invention,

(1) a process of connecting an electrode of a semiconductor chip to an electrode of a film substrate,

(2) injecting a COF mounting encapsulant between the film substrate and the semiconductor chip;

(3) The film substrate with a semiconductor chip on which the COF mounting encapsulant injection is completed is temporarily cured at 100 to 180 ° C. for at least 3 minutes and less than 30 minutes, and then allowed to cool, followed by main curing at 100 to 180 ° C. for 30 to 480 minutes. The manufacturing method containing a process is mentioned. The term "cooling" means that the temperature decreases during storage before the main curing after the temporary curing, and specifically, that the temperature of the film substrate with the semiconductor chip on which the COF mounting encapsulant injection is completed is lowered to 80 ° C or lower.

In the said manufacturing method, although a film substrate is not specifically limited, For example, a polyimide substrate is mentioned. The sealing agent for COF mounting of this invention suppresses generation | occurrence | production of a void, adhesiveness with a film board | substrate is enough, and even when electrode pitch is narrow to 15-40 micrometers, desorption generate | occur | produces when it is left to cool after the precure and the precure. It is difficult to do this, and a highly reliable semiconductor component can be obtained.

The semiconductor component sealed with the COF mounting sealing agent of this invention is suitable as a semiconductor component for display drive, especially a liquid crystal display drive, and can be used for a liquid crystal display module.

Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to these. Markings are by weight unless otherwise specified.

The components shown in Table 1 below were mixed using a planetary stirrer, a dissolver, a Mitsmoto roll mill, and a bead mill (but, in Examples 1 and 2, other than the bead mill), and then uniformized. It filtered using stainless mesh, and removed the bubble in resin using the vacuum degassing machine, and obtained the sealing agent for COF mounting of Examples 1-4.

About the sealing agent for COF mounting of Examples 1-4, the viscosity was measured at 25 degreeC using the E-type viscosity meter (Toki Sangyo Co., Ltd. make, apparatus name: TVE-22H, rotation speed 10rpm). In addition, the gel time was measured as follows. 5 mg ± 1 mg of the COF encapsulant of Examples 1 to 4 were supplied onto a hot plate of a predetermined temperature (Hot Plate HP-19U300, manufactured by Koikesei Mitsuki Co., Ltd.), stirred with a stirring rod in a circle, When the stirring rod was lifted and dropped while stirring from a supply, the time until the string guineaness became 5 mm or less was measured, and it was set as the gel time. The gel times at 120, 130, 140 and 150 ° C. were measured and the relationship between the temperature (absolute temperature) and the gel time was plotted as shown in FIG. 1 to calculate the slope when the linear approximation was performed by the least square method. It was set as the temperature dependency of gelation. The results are shown in Table 1.

In addition, the reliability of the sealing agent for COF mounting of Examples 1-4 was evaluated from the point of generation of a void and a leak.

The voids were evaluated as follows. COF with gold-tin process connection IC for LCD driver with gold bumps (chip size 1.6 mm x 15.1 mm, number of bumps 726, straight bump array) and polyimide tape substrate with tin-plated 30 μm pitch copper wiring In the package, 5.0 mg of the COF mounting encapsulant of Examples 1 to 4 was poured into the package using a dispenser. Subsequently, it processed for 5 minutes at 140 degreeC, and the sealing agent was temporarily hardened. The film substrate was observed using an optical microscope (magnification of 200 times) from the opposite direction from which the semiconductor chip was connected, and the number of voids per package was confirmed. The relationship between the number of voids and evaluation is?: 3 or less,?: 4 to 10,?: 11 to 40, ×: 41 or more. The results are shown in Table 1. In addition, the COF mounting sealing agents of Examples 1 to 4 all had good penetration into the gaps.

Leak was evaluated as follows. Film substrate (The thing which formed pattern of copper / tin (8.0 / 0.2 micrometer thickness) in the 38 micrometer-thick Kapton film. The pattern is performed using a dispenser for 15 micrometers in width, 15 micrometers in line spaces, and 30 micrometers in pattern pitch.) The fifth mg of COF mounting bag of Examples 1 to 4 was applied, and then a 38 μm thick Kapton film was superimposed thereon. Next, it processed at 150 degreeC for 30 minutes, and hardened the sealing agent. Using an ion migration evaluation system (manufactured by ESPEC), 60V electric charge was applied under the condition of 85 ° C / humidity 85%, and the state of insulation resistance was confirmed. (Double-circle): 1x10 <^{9> (} ohm) or more hold | maintains even after 100 hours of elapsed time, and x: It falls to 1x10 <^{7> (} ohm) or less in less than 100,000 hours. The results are shown in Table 1.

Epoxy Resin 1: Bisphenol F Type Epoxy Resin (Epoxy Equivalent 165)

Epoxy Resin 2: Bisphenol A Type Epoxy Resin (Epoxy Equivalent 189)

Epoxy resin 3:

Acid Anhydride Curing Agents: 3,4-dimethyl-6- (2-methyl-1-propenyl) -1,2,3,6-tetrahydrophthalic anhydride

Cure Accelerator 1: 2-phenyl-4-methylimidazole

Cure Accelerator 2: 2,4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine

Silane coupling agent: 3-glycidoxypropyltrimethoxysilane

The sealing agent for COF mounting of this invention suppressed void generation, and was excellent also in the point of a leak. In particular, Examples 3 and 4 containing the epoxy resin of the formula (1) showed good results.

According to the sealing agent for COF mounting of this invention, even when bump pitch and the space | interval of a semiconductor chip and a board | substrate are narrow, permeability is enough, and generation | occurrence | production of a void is suppressed with respect to the hardened | cured material of an encapsulant, and a film substrate and Adhesion can be obtained sufficiently, and as a result, a highly reliable semiconductor component can be obtained.

Claims (10)

(A) Epoxy resin, (B) Acid anhydride type hardening | curing agent, and (C) Imidazole type and / or triazine type hardening accelerator containing 100 weight part of total of (A) component, (B) component, and (C) component COC packaging sealing agent whose (C) component is 0.6-10 weight part with respect to. (A) Epoxy resin, (B) Acid anhydride type hardening | curing agent, and (C) Imidazole type and / or triazine type hardening accelerator, The gel time in 150 degreeC is 40-130 second, The temperature dependence of gelation COF mounting encapsulant of -5 to -13. The compound of claim 1 or 2, wherein the component (C) is 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 2 From the group consisting of -phenylimidazole, 2-phenyl-4-methylimidazole and 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] ethyl -s -triazine COF mounting sealing agent containing 1 or more types selected. The method according to any one of claims 1 to 3, wherein component (A) is represented by the following formula (1):

The sealing agent for COF mounting containing the epoxy resin represented by (wherein R is hydrogen, a methyl group, or an ethyl group). The component (B) according to any one of claims 1 to 4, wherein the component (B) is 3,4-dimethyl-6- (2-methyl-1-propenyl) -1,2,3,6-tetrahydrophthalic acid. Anhydride, 1-isopropyl-4-methyl-bicyclo [2.2.2] octo-5-ene-2,3-dicarboxylic acid anhydride, norbornane-2,3-dicarboxylic acid anhydride, methylnorbornane A COF packaging encapsulant containing at least one member selected from the group consisting of -2,3-dicarboxylic acid anhydride, methylhydrazinic anhydride, succinic anhydride substituted with an alkenyl group, and diethylglutaric anhydride. The sealing agent for COF packaging according to any one of claims 1 to 5, wherein the component (B) is 0.6 to 1.2 mol with respect to 1 mol of the epoxy group in the component (A). (1) a process of connecting an electrode of a semiconductor chip to an electrode of a film substrate, (2) injecting the sealing agent for COF mounting according to any one of claims 1 to 6 between the film substrate and the semiconductor chip; (3) The film substrate with the semiconductor chip on which the COF mounting encapsulant injection is completed is temporarily cured at 100 to 180 ° C. for at least 3 minutes and less than 30 minutes and then left to cool, and then at 100 to 180 ° C. for 30 minutes to 480 Main curing process for a minute Method for manufacturing a semiconductor component comprising a. The manufacturing method of the semiconductor component of Claim 7 whose electrode pitch of a film substrate is 15-40 micrometers. The semiconductor component sealed using the sealing agent for COF mounting of any one of Claims 1-6. The semiconductor component manufactured by the manufacturing method of Claim 7 or 8.

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