KR20090014635A - Oscillator for self refresh - Google Patents
Oscillator for self refresh Download PDFInfo
- Publication number
- KR20090014635A KR20090014635A KR1020070078715A KR20070078715A KR20090014635A KR 20090014635 A KR20090014635 A KR 20090014635A KR 1020070078715 A KR1020070078715 A KR 1020070078715A KR 20070078715 A KR20070078715 A KR 20070078715A KR 20090014635 A KR20090014635 A KR 20090014635A
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- signal
- oscillator
- self refresh
- output
- Prior art date
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
Abstract
The present invention includes a voltage level detector for detecting and outputting a voltage level of a core voltage, a controller for outputting a control signal in response to an output signal of the voltage level detector, and an oscillator for generating a pulse signal in response to the control signal. do.
Description
The present invention relates to a semiconductor memory device, and more particularly, to a self refresh oscillator.
The self refresh oscillator determines the self refresh cycle accordingly to correspond to the low voltage characteristics in the DRAM. The operation according to the set period is to preserve the data of the cell.
1 is a block diagram of a self refresh oscillator according to the prior art, and FIG. 1 is a circuit diagram of a self refresh oscillator according to the prior art.
As shown in Fig. 1 and Fig. 2, the prior art self refresh oscillator includes a
The control signals CS1 and CS2 output from the
That is, when the control signal CS2 output from the
The self-refreshing oscillator according to an embodiment of the present invention includes a voltage level detector for detecting and outputting a voltage level of a core voltage, a controller for outputting a control signal in response to an output signal of the voltage level detector, and a response to the control signal. Oscillator to generate a pulse signal.
In addition, the self refresh oscillator according to another embodiment of the present invention includes a voltage level detector for detecting and outputting a voltage level of the core voltage in response to the self refresh signal, and a first control signal in response to an output signal of the voltage level detector. A first control signal output unit for outputting a first control signal to be output, a second control signal output unit for outputting a second control signal in response to the self refresh signal, and in response to the first and second control signals An oscillator for generating a pulse signal.
3 is a block diagram of a self refresh oscillator according to the present invention, and FIG. 4 is a circuit diagram of a self refresh oscillator according to the present invention.
As illustrated in FIG. 3, the present invention provides a
As shown in FIG. 4, the voltage
The
Here, the first control signal CS1 is a control signal for applying a ground voltage signal to the
The first control
The second control
The
The
The operation of the present invention configured as described above will be described in detail with reference to the accompanying drawings.
As shown in FIGS. 3 and 4, when the self refresh signal SREF becomes High to Low, the
Then, the first control
The second control
In this way, when a bias is applied to the
Here, the voltage signal V1 that is divided by the core voltage voltage by the resistors R1 and R2 of the
The reason for this is that at low voltage, the voltage level of the signal V1 is low, so that the current of the NMOS N1 is relatively small, so that the first control signal CS1 is not lowered as the core voltage is lowered. On the contrary, since the current of the NMOS N1 increases as the core voltage increases, the first control signal CS1 does not increase as the core voltage increases. By using this, the following operation can be performed.
First, when the core voltage is lowered by Va, the signal V1 is lowered by Va. However, since the current of the NMOS N1 decreases, the first control signal CS1 does not decrease as much as Va, but relatively low, so that the current of NMOS0 to NMOSx applying the ground voltage to the oscillator changes little, and the second control signal ( The potential of CS2) also changes less. This means that even if the core voltage goes down a lot, the cycles change less because Vgs changes less.
When the core voltage is increased by Va, the signal V1 is increased by Va. However, since the current of the NMOS N1 increases because the current of the NMOS N1 increases, the first control signal CS1 does not increase as much as Va. Therefore, the current of the NMOS0 to NMOSx that applies the ground voltage to the oscillator changes little and the second control signal ( The potential of CS2) also changes less. This means that even if the core voltage increases a lot, the Vgs changes less so the period changes.
As described above, the present invention can reduce the current consumption by supplying a pulse signal having a constant period in spite of a high voltage displacement to prevent frequent self refresh by the pulse signal having a short period.
1 is a block diagram of a self refresh oscillator according to the prior art.
2 is a circuit diagram of a self refresh oscillator according to the prior art.
3 is a block diagram of a self refresh oscillator according to the present invention.
4 is a circuit diagram of a self refresh oscillator according to the present invention.
Claims (27)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070078715A KR20090014635A (en) | 2007-08-06 | 2007-08-06 | Oscillator for self refresh |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070078715A KR20090014635A (en) | 2007-08-06 | 2007-08-06 | Oscillator for self refresh |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20090014635A true KR20090014635A (en) | 2009-02-11 |
Family
ID=40684513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070078715A KR20090014635A (en) | 2007-08-06 | 2007-08-06 | Oscillator for self refresh |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20090014635A (en) |
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2007
- 2007-08-06 KR KR1020070078715A patent/KR20090014635A/en not_active Application Discontinuation
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