KR20090013806A - Photosensitive resin and photosensitive resin composition - Google Patents

Photosensitive resin and photosensitive resin composition Download PDF

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KR20090013806A
KR20090013806A KR1020087028846A KR20087028846A KR20090013806A KR 20090013806 A KR20090013806 A KR 20090013806A KR 1020087028846 A KR1020087028846 A KR 1020087028846A KR 20087028846 A KR20087028846 A KR 20087028846A KR 20090013806 A KR20090013806 A KR 20090013806A
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photosensitive resin
meth
acrylate
mol
parts
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KR1020087028846A
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KR101269756B1 (en
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다케히로 기노시타
히카루 사토
다카유키 야나이
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쇼와 하이폴리머 컴패니 리미티드
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00Chemical modification by after-treatment
    • C08F8/14Esterification
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/006Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polymers provided for in C08G18/00
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/10Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polymers containing more than one epoxy radical per molecule
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/12Polymers provided for in subclasses C08C or C08F
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14Polymers provided for in subclass C08G
    • C08F290/144Polymers containing more than one epoxy group per molecule
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14Polycondensates modified by chemical after-treatment
    • C08G59/1433Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
    • C08G59/1438Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
    • C08G59/1455Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
    • C08G59/1461Unsaturated monoacids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14Polycondensates modified by chemical after-treatment
    • C08G59/1494Polycondensates modified by chemical after-treatment followed by a further chemical treatment thereof
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/22Absorbing filters
    • G02B5/223Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Abstract

A photosensitive resin which is prepared by copolymerizing rosin (meth)acrylate (a), a radically polymerizable compound having an epoxy group (b) and a radically polymerizable compound (c) exclusive of (a) and (b) and being capable of copolymerizing with the above compounds, reacting an unsaturated monobasic acid (d) with the epoxy group in the resultant copolymer, and then reacting a polybasic acid anhydride with the hydroxyl group; or a photosensitive resin which is prepared by copolymerizing rosin (meth)acrylate (a), an unsaturated monobasic acid (d) and a radically polymerizable compound (c) exclusive of (a) and (b), and reacting a radically polymerizable compound having an epoxy group (b) with the carboxyl group in the resultant copolymer; and a photosensitive resin composition containing the photosensitive resin. This photosensitive resin has a skeleton derived from rosin in the side chain thereof, exhibits the solubility in an alkali. A coating film, which is formed from the photosensitive resin composition, is excellent in the adhesion with various materials and in heat resistance, and therefore, the composition may have a high utility value in the "resist" field.

Description

감광성 수지 및 감광성 수지 조성물{PHOTOSENSITIVE RESIN AND PHOTOSENSITIVE RESIN COMPOSITION}Photosensitive resin and photosensitive resin composition {PHOTOSENSITIVE RESIN AND PHOTOSENSITIVE RESIN COMPOSITION}

본 발명은 감광성 수지 및 감광성 수지 조성물에 관한 것이다. 더욱 상세하게는 로진에 유래하는 골격을 측쇄에 가지고 있고, 각종 재료와의 밀착성이나 내열성이 뛰어난 경화 도막을 형성할 수 있는 감광성 수지 및 상기 수지를 포함하는 감광성 수지 조성물에 관한 것이다.The present invention relates to a photosensitive resin and a photosensitive resin composition. More specifically, it is related with the photosensitive resin which has a frame | skeleton derived from rosin in a side chain, and can form the cured coating film excellent in adhesiveness and heat resistance with various materials, and the photosensitive resin composition containing the said resin.

근래, 자원 절약, 에너지 절약의 관점으로부터 인쇄, 도료, 접착제, 액정 관련 분야에 있어서, 자외선 혹은 전자선과 같은 활성 에너지선으로 경화 가능한 활성 에너지선 경화형 수지가 널리 이용되고 있다.In recent years, active energy ray-curable resins curable with active energy rays such as ultraviolet rays or electron beams have been widely used in the fields of printing, paints, adhesives, and liquid crystals in view of resource saving and energy saving.

프린트 배선 기판 등의 전자 재료 분야에서도 반도체 기판용 수지로서 활성 에너지선으로 경화하는 수지를 이용한 솔더 레지스트 등이 사용되고 있다. 포토레지스트법에서 프린트 배선판에 사용되는 재료로는 산 펜던트 (pendant)형 노볼락 에폭시 아크릴레이트가 일반적이고, 예를 들면 특허 문헌 1에서는 에폭시 수지에 불포화 모노카르복시산을 반응시키고, 그 다음에 다염기산 무수물을 부가한 화합물 이 이용되고 있다. 더욱이, 특허 문헌 2에서는 노볼락형 에폭시 아크릴레이트에 산무수물을 부가한 화합물이 이용되고 있다. 그렇지만, 구리 도금면과의 밀착성이 충분하지 않아 다층 프린트 배선판용으로 사용했을 경우에는 도체 회로간의 충분한 밀착 강도가 얻어지지 않는다는 과제를 가진다.Also in the field of electronic materials, such as a printed wiring board, the soldering resist etc. which used resin hardened | cured by an active energy ray are used as resin for semiconductor substrates. As a material used for a printed wiring board in the photoresist method, an acid pendant novolac epoxy acrylate is generally used. For example, in Patent Document 1, unsaturated monocarboxylic acid is reacted with an epoxy resin, and then polybasic acid anhydride is reacted. Added compounds are used. Moreover, in patent document 2, the compound which added the acid anhydride to the novolak-type epoxy acrylate is used. However, when adhesiveness with a copper plating surface is not enough and it is used for a multilayer printed wiring board, there exists a subject that sufficient adhesive strength between conductor circuits is not obtained.

아울러, 레지스트 피막의 내열성, 내습성, 전기 절연성을 향상시키는 수단으로서 특허 문헌 3에서는 수지의 일부 에폭시기에 (메타)아크릴산을 반응시키고, 그 다음에 불포화기를 가지는 실리콘 화합물을 반응시킨 실리콘 변성 에폭시 수지가 제안되고 있다.In addition, as a means of improving the heat resistance, moisture resistance, and electrical insulation of the resist film, Patent Document 3 discloses that a silicone-modified epoxy resin in which (meth) acrylic acid is reacted with a part of an epoxy group of a resin, and then a silicon compound having an unsaturated group is reacted. It is proposed.

또, 특허 문헌 4에서는 에폭시기를 가지는 라디칼 중합성 단량체를 라디칼 중합해 얻어진 측쇄에 에폭시기를 가지는 중합체와 이하의 중합체로 이루어진 포토레지스트가 제안되고 있다. 그 중합체로는 카르복실기를 가지는 라디칼 중합성 단량체와 아크릴산 에스테르 등을 라디칼 공중합시켜 얻어진 공중합체의 측쇄 카르복실기에 글리시딜 (메타)아크릴레이트와 같은 화합물을 부가해 측쇄를 불포화기로 한 것, 에폭시기를 가지는 라디칼 중합성 단량체를 단위로서 포함하는 (공)중합체에 (메타)아크릴산을 반응시키고, 아울러 다염기산 무수물을 부가한 (공)중합체, 에폭시아크릴레이트에 다염기산 무수물을 부가한 (공)중합체, 무수 말레산 중합체에 글리시딜 (메타)아크릴레이트와 같은 화합물을 부가해 측쇄를 불포화기로 한 것 등이 이용되고 있다.Moreover, in patent document 4, the photoresist which consists of the polymer which has an epoxy group in the side chain obtained by radically polymerizing the radically polymerizable monomer which has an epoxy group, and the following polymers is proposed. As the polymer, a compound such as glycidyl (meth) acrylate is added to the side chain carboxyl group of the copolymer obtained by radical copolymerization of a radical polymerizable monomer having a carboxyl group with an acrylic acid ester and the like, and the side chain is unsaturated. (Co) polymer which reacted (meth) acrylic acid to the (co) polymer containing a radically polymerizable monomer as a unit, and added the polybasic acid anhydride, (co) polymer which added the polybasic acid anhydride to epoxy acrylate, and maleic anhydride The compound which added a compound like glycidyl (meth) acrylate to the polymer, and made the side chain unsaturated group, etc. is used.

더욱이, 페놀아랄킬 골격을 주쇄로 가지는 수지의 페놀성 수산기에 에피크롤히드린을 반응시켜 글리시딜에테르화하고, 일부 글리시딜에테르기를 아크릴산과 같 은 불포화 모노카르복실산을 반응시켜 얻어진 에폭시 아크릴레이트를 주요한 경화 수지 성분으로서 이용하는 경우도 제안되고 (특허 문헌 5), 이와 같은 에폭시 아크릴레이트에 추가로 다염기산 무수물을 부가한 (공)중합체도 제안되고 있다 (특허 문헌 6). 아울러, 디시클로펜타디엔 골격을 가지는 (메타)아크릴레이트를 단량체 성분으로 하는 (공)중합체를 주요한 경화 수지 성분으로서 이용하는 경우도 제안 (특허 문헌 7)되고 있다.Furthermore, epoxy obtained by reacting epichlorohydrin with a phenolic hydroxyl group of a resin having a phenol aralkyl skeleton as a main chain to glycidyl ether and reacting some glycidyl ether groups with an unsaturated monocarboxylic acid such as acrylic acid. The case where acrylate is used as a main cured resin component is also proposed (patent document 5), and the (co) polymer which added polybasic acid anhydride to such epoxy acrylate is also proposed (patent document 6). Moreover, the case where the (co) polymer which uses the (meth) acrylate which has a dicyclopentadiene frame | skeleton as a monomer component is used as a main hardening resin component is also proposed (patent document 7).

이와 같이, 반도체 회로의 집적도의 향상과 함께 솔더 레지스트 분야에서는 감광성 수지에 요구되는 성능은 지극히 어려워지고, 그 어려운 요구를 만족시키기 위해서 상기와 같은 여러 가지 개량된 수지가 제안되고 있지만, 충분히 만족하는 것은 얻어지지 않는다.As described above, in order to improve the degree of integration of semiconductor circuits and the performance required for photosensitive resins in the field of solder resists, various improved resins as described above have been proposed in order to satisfy the difficult demands. Not obtained.

또, 상기와 같은 여러 가지 수지 등을 경화 성분으로 하는 감광성 수지로부터 제조된 액정 표시 장치 등의 칼라 필터, 블랙 매트릭스, 포토스페이서, 보호막 등의 제조에 있어서는, 에폭시 아크릴레이트로는 안료 또는 염료의 분산 안정성에 문제가 있어, 종래부터 메타크릴산과 벤질메타크릴레이트, 히드록시에틸메타크릴레이트, 부틸메타크릴레이트 등을 포함하는 아크릴계 공중합체를 이용한 것이 알려져 있지만, 내열성이 충분하지 않아 패턴 고착시의 가열 공정에서 열분해물이 아웃 가스가 되어 발생해 기판이나 장치를 오염시키는 것이 문제가 되고 있다. 또, 내열성을 올리기 위해서 지환식 시클로헥실메타크릴레이트 등을 사용한 아크릴 공중합체를 이용하면, 기판과의 밀착성이 충분하지 않아 패터닝시에 박리 등의 문제가 생기는 경우가 있다 (예를 들면, 특허 문헌 8).Moreover, in manufacture of color filters, such as a liquid crystal display device manufactured from the photosensitive resin which uses the above various resin etc. as a hardening component, a black matrix, a photo spacer, a protective film, etc., dispersion of a pigment or dye as an epoxy acrylate There is a problem in stability, and conventionally, acrylic copolymers containing methacrylic acid, benzyl methacrylate, hydroxyethyl methacrylate, butyl methacrylate, and the like are known. However, heat resistance is insufficient and heating at the time of fixing the pattern It is a problem that the pyrolysate becomes outgas in the process and contaminate the substrate or the device. Moreover, when using the acrylic copolymer using alicyclic cyclohexyl methacrylate etc. in order to raise heat resistance, adhesiveness with a board | substrate may not be enough and a problem, such as peeling at the time of patterning, may arise (for example, a patent document) 8).

감광성 수지를 사용할 때에 발생하는 여러 가지 문제를 해결하기 위해서, 로진에 유래하는 골격을 측쇄에 가지는 수지를 주성분으로서 이용한 감광성 수지에 대해서도 다수의 제안이 이루어지고 있다 (예를 들면, 특허 문헌 9~12 등).In order to solve the various problems which arise when using photosensitive resin, many proposals are made also about the photosensitive resin which used as a main component the resin which has frame | skeleton derived from rosin in a side chain (for example, patent documents 9-12 Etc).

그렇지만, 상기 각 공보에는 로진에 유래하는 골격을 측쇄에 가지는 수지를 더욱 변성시킴으로써, 감광성 수지의 특성을 개량하는 것은 기재되어 있지 않다. However, the above publications do not describe improving the characteristics of the photosensitive resin by further modifying the resin having a skeleton derived from rosin in the side chain.

특허 문헌 1: 일본 특공 소56-40329호 공보Patent Document 1: Japanese Patent Application Laid-Open No. 56-40329

특허 문헌 2: 일본 특개 소61-243869호 공보Patent Document 2: Japanese Patent Application Laid-Open No. 61-243869

특허 문헌 3: 일본 특개 평6-19134호 공보Patent document 3: Unexamined-Japanese-Patent No. 6-19134

특허 문헌 4: 일본 특개 평8-211611호 공보Patent Document 4: Japanese Patent Application Laid-Open No. 8-211611

특허 문헌 5: 일본 특개 평10-101770호 공보Patent Document 5: Japanese Patent Application Laid-Open No. 10-101770

특허 문헌 6: 일본 특개 2001-247649호 공보Patent Document 6: Japanese Patent Application Laid-Open No. 2001-247649

특허 문헌 7: 일본 특개 2001-89533호 공보Patent Document 7: Japanese Patent Application Laid-Open No. 2001-89533

특허 문헌 8: 일본 특개 평9-278842호 공보Patent Document 8: Japanese Patent Application Laid-Open No. 9-278842

특허 문헌 9: 일본 특개 평6-100641호Patent Document 9: Japanese Patent Application Laid-Open No. 6-100641

특허 문헌 10: 일본 특개 2002-289039호Patent Document 10: Japanese Patent Laid-Open No. 2002-289039

특허 문헌 11: 일본 특개 2003-248307호Patent Document 11: Japanese Patent Application Laid-Open No. 2003-248307

특허 문헌 12: 일본 특개 2004-204103호 공보Patent Document 12: Japanese Patent Application Laid-Open No. 2004-204103

본 발명은, 이와 같은 상황하에서 본 발명자들은 열심히 검토한 결과, 로진에 유래하는 골격을 측쇄에 가지는 수지를 더욱 변성시킴으로써 기판과의 밀착성 및 내열성이 충분하고, 또한 가열시의 아웃 가스가 적은 감광성 수지 및 감광성 수지 조성물이 얻어지는 것을 알아내어 본 발명에 도달했다.As a result of diligent study by the present inventors under such a situation, the present invention has further modified a resin having a rosin-derived skeleton in the side chain, thereby sufficient for adhesion and heat resistance to the substrate, and a photosensitive resin having less outgassing during heating. And it discovered that the photosensitive resin composition was obtained and reached | attained this invention.

즉, 본 발명의 제 1 은 로진 (메타)아크릴레이트 (a) 5~30몰%, 에폭시기를 가지는 라디칼 중합성 화합물 (b) 30~85몰% 및 이들과 공중합할 수 있는 (a) 및 (b) 이외의 라디칼 중합성 화합물 (c) 10~65몰%를 그 합계가 100몰%가 되는 양으로 공중합시켜 얻어진 공중합체 (이하, 공중합체 1로 칭함) 중의 에폭시기의 10~100%에 불포화 일염기산 (d)을 반응시킨 후, 수산기의 5~100%에 다염기산 무수물 (e)을 반응시켜서 이루어진 감광성 수지 (이하, 감광성 수지 1로 칭함)을 제공하는 것이다.That is, the 1st of this invention is rosin (meth) acrylate (a) 5-30 mol%, the radically polymerizable compound (b) which has an epoxy group (30)-85 mol%, and copolymerizable with these (a) and ( Unsaturated to 10 to 100% of the epoxy groups in the copolymer (hereinafter referred to as Copolymer 1) obtained by copolymerizing 10 to 65 mol% of the radically polymerizable compound (c) other than b) in an amount of 100 mol% in total. After reacting monobasic acid (d), polybasic acid anhydride (e) is made to react with 5-100% of hydroxyl groups, and it provides the photosensitive resin (henceforth referred to as photosensitive resin 1).

다음에, 본 발명의 제 2 는 로진 (메타)아크릴레이트 (a) 5~30몰%, 불포화 일염기산 (d) 20~60몰%, 및 (a) 및 (d) 이외의 라디칼 중합성 화합물 (c) 10~75몰%를 그 합계가 100몰%가 되는 양으로 공중합시켜 얻어진 공중합체 (이하, 공중합체 2로 칭함) 중의 카르복실기의 5~80%에 에폭시기를 가지는 라디칼 중합성 화합물 (b)을 반응시켜서 이루어진 감광성 수지 (이하, 감광성 수지 2로 칭함)를 제공하는 것이다.Next, the second aspect of the present invention is radically polymerizable except for 5 to 30 mol% of rosin (meth) acrylate (a), 20 to 60 mol% of unsaturated monobasic acid (d), and (a) and (d). A radically polymerizable compound having an epoxy group in 5 to 80% of the carboxyl groups in a copolymer (hereinafter referred to as copolymer 2) obtained by copolymerizing 10 to 75 mol% of the compound (c) in an amount of 100 mol% in total ( It is to provide a photosensitive resin (hereinafter referred to as photosensitive resin 2) formed by reacting b).

다음에, 본 발명의 제 3 은 상기 감광성 수지 1 및/또는 2, 및 반응성 희석제 (f)를 필수 성분으로 하고, 필요에 따라 용매 (g)를 함유하는 감광성 수지 조성물을 제공하는 것이다.Next, a third aspect of the present invention is to provide a photosensitive resin composition containing the photosensitive resins 1 and / or 2 and the reactive diluent (f) as essential components and, if necessary, containing a solvent (g).

더욱이, 본 발명의 제 4 는 추가로 용매 (g)를 함유하는 감광성 수지 조성물을 제공하는 것이다.Moreover, the fourth of the present invention further provides a photosensitive resin composition containing a solvent (g).

발명을 실시하기 위한 바람직한 형태Best Mode for Carrying Out the Invention

우선, 본 발명의 감광성 수지 1에 대하여 설명한다.First, the photosensitive resin 1 of this invention is demonstrated.

감광성 수지 1은 상기 모노머 성분 (a), (b) 및 (c)에 유래하는 골격을 측쇄에 가지고 있고, 그 공중합 비율은 (a) 5~30몰%, 바람직하게는 5~25몰%, 더욱 바람직하게는 10~25몰%, (b) 30~85몰%, 바람직하게는 30~70몰%, 더욱 바람직하게는 40~60몰% 및 (c) 10~65몰%, 바람직하게는 20~55몰%, 더욱 바람직하게는 25~50몰%이고, 그 합계는 100몰%이다. 이 (a), (b) 및 (c) 성분의 라디칼 공중합체가 공중합체 1이다.The photosensitive resin 1 has a skeleton derived from the monomer components (a), (b) and (c) in the side chain, and the copolymerization ratio thereof is (a) 5 to 30 mol%, preferably 5 to 25 mol%, More preferably 10-25 mol%, (b) 30-85 mol%, Preferably 30-70 mol%, More preferably, 40-60 mol% and (c) 10-65 mol%, Preferably 20-55 mol%, More preferably, it is 25-50 mol%, and the sum total is 100 mol%. The radical copolymer of this (a), (b) and (c) component is copolymer 1.

(a) 성분을 5몰% 이상으로 함으로써, 로진 골격의 도입에 의해 감광성 수지 1로부터 형성되는 도막의 기판과의 밀착성, 내열성이 좋아진다. 30몰% 이하로 함으로써, 수지의 점도가 높아지는 것을 방지한다. 수지의 점도가 높아졌을 경우, 점도를 저하시키기 위해서는 다음에 설명하는 반응성 희석제 (f) 및 용매 (g)의 첨가량을 많게 할 필요가 있어, 제품의 특성 조절 및 경화성 조절이 어려워진다.By setting the component (a) to 5 mol% or more, the adhesion to the substrate and the heat resistance of the coating film formed from the photosensitive resin 1 by the introduction of the rosin skeleton are improved. By setting it as 30 mol% or less, the viscosity of resin is prevented from becoming high. When the viscosity of the resin is increased, in order to reduce the viscosity, it is necessary to increase the amount of the reactive diluent (f) and the solvent (g) described below, which makes it difficult to control the properties of the product and control the curability.

(b) 성분을 30~85몰%로 함으로써, 에폭시기의 도입량, 즉, 다음에 기술하는 (d) 성분인 불포화 일염기산에 유래하는 불포화기의 도입량을 조절할 수 있어, 감광성 수지 1의 경화성을 조절할 수 있다. (a) 성분 및 (b) 성분을 상기와 같은 비율로 함으로써, (c) 성분은 10~65몰%의 범위 내에서 적절히 선정할 수 있다.By setting the component (b) to 30 to 85 mol%, the introduction amount of the epoxy group, that is, the introduction amount of the unsaturated group derived from the unsaturated monobasic acid as the component (d) described below can be adjusted, and the curability of the photosensitive resin 1 can be adjusted. I can regulate it. By making (a) component and (b) component into the above ratio, (c) component can be selected suitably within the range of 10-65 mol%.

상기 감광성 수지 1은 상기 (a), (b) 및 (c)를 라디칼 공중합시켜 공중합체 1을 형성시킨 후, (d) 성분으로서 불포화 일염기산을 반응시키고, 그 다음에 (e) 성분으로서 무수 다염기산을 반응시킴으로써 얻어진다.The photosensitive resin 1 is a radical copolymerization of the above (a), (b) and (c) to form copolymer 1, and then reacts an unsaturated monobasic acid as (d) component, and then as (e) component. It is obtained by reacting anhydrous polybasic acid.

(d) 성분인 불포화 일염기산의 카르복실기는 (b) 성분에 유래하는 측쇄의 에폭시기와 반응해 에폭시기를 개환해 수산기가 형성되는 동시에 말단에 불포화기가 부여된다. (e) 성분인 무수 다염기산은 (d) 성분 중의 카르복실기와 (b) 성분에 유래하는 측쇄 에폭시기의 반응에 의해 생긴 수산기 및 (a) 성분인 로진 (메타)아크릴레이트의 로진 골격 중에 원래 존재하고 있는 수산기와 반응해 산무수물기가 개환해 카르복실기로 변환된다.The carboxyl group of the unsaturated monobasic acid as the component (d) reacts with the side chain epoxy group derived from the component (b) to ring-open an epoxy group to form a hydroxyl group, and at the same time, an unsaturated group is given to the terminal. The anhydrous polybasic acid as the component (e) originally exists in the rosin skeleton of the hydroxyl group produced by the reaction of the carboxyl group in the component (d) and the side chain epoxy group derived from the component (b) and the rosin (meth) acrylate as the component (a). It reacts with a hydroxyl group, an acid anhydride group is ring-opened, and is converted into a carboxyl group.

(d) 성분인 불포화 일염기산의 사용량은 (b) 성분에 유래하는 측쇄 에폭시기 100몰에 대해서 10~100몰, 바람직하게는 30~100몰, 더욱 바람직하게는 50~100몰이다.The usage-amount of the unsaturated monobasic acid which is (d) component is 10-100 mol, Preferably it is 30-100 mol, More preferably, it is 50-100 mol with respect to 100 mol of side chain epoxy groups derived from (b) component.

불포화 일염기산의 사용량을 10몰 이상으로 함으로써 수지가 경화하기 위해 필요한 불포화기의 최저량을 도입할 수 있고, 불포화 일염기산의 사용량을 100몰 이하로 함으로써 얻어지는 본 발명의 감광성 수지 1 중의 미반응 불포화 일염기산의 양을 줄일 수 있다.By using the amount of the unsaturated monobasic acid at 10 mol or more, the minimum amount of the unsaturated group required for curing the resin can be introduced, and the amount of the unsaturated photobasic resin 1 of the present invention obtained by making the amount of the unsaturated monobasic acid at 100 mol or less is used. The amount of reactive unsaturated monobasic acids can be reduced.

다음에 반응시키는 (e) 성분인 무수 다염기산의 사용량은 (d) 성분 중의 카르복실기와 (b) 성분에 유래하는 측쇄 에폭시기의 반응에 의해 생긴 수산기 및 (a) 성분인 로진 골격 중에 원래 존재하고 있는 수산기의 합계량 100몰에 대해서 5~100몰, 바람직하게는 10~90몰, 더욱 바람직하게는 20~90몰이다. 수산기 100몰에 대해서 무수 다염기산의 몰수를 5~100몰의 범위로 함으로써 얻어지는 감광성 수지 1의 산가(JIS K6901)를 20~150 KOH㎎/g의 범위로 조절할 수 있다. 산가에 대한 설명은 뒤에 기술하는 감광성 수지 2의 설명 부분에서 동시에 한다.The usage-amount of the polybasic acid anhydride which is the (e) component made to react next is the hydroxyl group which originated by reaction of the carboxyl group in (d) component and the side chain epoxy group derived from (b) component, and the hydroxyl group which exists originally in the rosin skeleton which is (a) component It is 5-100 mol, Preferably it is 10-90 mol with respect to 100 mol of total amounts of, More preferably, it is 20-90 mol. The acid value (JIS K6901) of the photosensitive resin 1 obtained can be adjusted to the range of 20-150 KOHmg / g by making the number-of-moles of anhydrous polybasic acid into the range of 5-100 mol with respect to 100 mol of hydroxyl groups. Explanation of acid value is made simultaneously in the description part of photosensitive resin 2 described later.

공중합체 1을 얻기 위한 라디칼 공중합 반응은 특별히 제한되지 않고, 종래부터 행해지고 있는 통상의 라디칼 중합법을 적용할 수 있다.The radical copolymerization reaction for obtaining copolymer 1 is not particularly limited, and conventional radical polymerization methods conventionally performed can be applied.

예를 들어, 프로필렌글리콜 모노메틸에테르, 프로필렌글리콜 모노메틸에테르 아세테이트와 같은 글리콜 에테르계 용매, 톨루엔이나 크실렌과 같은 탄화수소계나 아세트산에틸과 같은 관능기를 가지지 않은 유기 용매 중에 상기 (a), (b) 및 (c) 성분을 원하는 비율로 용해하고, 아조비스이소부티로니트릴, 아조비스이소발레로니트릴, 과산화벤조일, t-부틸퍼옥시-2-에틸헥사노에이트와 같은 중합 개시제를 혼합해 환류 상태에서 50~130℃ 정도에서 1~20시간 정도 중합시킴으로써 공중합체 1의 유기 용매 용액이 얻어진다. 중합 개시제의 사용량은 (a), (b) 및 (c) 성분의 합계량 100중량부에 대해서 통상 0.5~20중량부 정도, 바람직하게는 1.0~10중량부이다.For example, (a), (b) and (g) in a glycol ether solvent such as propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, a hydrocarbon solvent such as toluene or xylene, or an organic solvent having no functional group such as ethyl acetate. (c) The component is dissolved at a desired ratio, and a polymerization initiator such as azobisisobutyronitrile, azobisisovaleronitrile, benzoyl peroxide, t-butylperoxy-2-ethylhexanoate is mixed and refluxed. The organic solvent solution of copolymer 1 is obtained by superposing | polymerizing at about 50-130 degreeC for about 1 to 20 hours. The usage-amount of a polymerization initiator is about 0.5-20 weight part normally with respect to 100 weight part of total amounts of (a), (b) and (c) component, Preferably it is 1.0-10 weight part.

유기 용매를 사용하지 않고 (a), (b) 및 (c) 성분과 중합 개시제만으로 괴상 중합을 실시해도 된다.You may perform block polymerization only with (a), (b) and (c) component and a polymerization initiator, without using an organic solvent.

유기 용매의 사용량은 (a), (b) 및 (c) 성분의 합계량 100중량부에 대해서, 통상 30~1000중량부 정도, 바람직하게는 50~800중량부이다. 유기 용매의 사용량을 1000중량부 이하로 함으로써, 연쇄 이동 작용에 의해 공중합체 1의 분자량이 저하하는 것을 막고, 또한 최종적으로 얻어지는 감광성 수지 1의 고형분 농도를 적절한 범위로 조절할 수 있다. The usage-amount of an organic solvent is about 30-1000 weight part normally with respect to 100 weight part of total amounts of (a), (b) and (c) component, Preferably it is 50-800 weight part. By setting the usage-amount of an organic solvent to 1000 weight part or less, the molecular weight of the copolymer 1 is prevented from falling by the chain transfer action, and the solid content concentration of the finally obtained photosensitive resin 1 can be adjusted to an appropriate range.

30중량부 이상으로 함으로써, 비정상인 중합 반응을 막아 안정된 중합 반응을 진행시킬 수 있어 수지가 착색하거나 겔화하는 것을 막을 수 있다.By setting it as 30 weight part or more, abnormal polymerization reaction can be prevented and stable polymerization reaction can be advanced, and resin can be prevented from coloring or gelatinizing.

본 발명의 감광성 수지 1은 뒤에 기술하는 반응성 희석제나 용매를 혼합한 감광성 수지 조성물로서 주로 레지스트 등의 전자 재료로서 이용되므로, 공중합체 1을 상기와 같은 라디칼 공중합으로 제조할 때, 프로필렌글리콜 모노메틸에테르 아세테이트와 같은 글리콜 에스테르계 용매가 바람직하게 이용된다.Since the photosensitive resin 1 of this invention is mainly used as electronic materials, such as a resist, as the photosensitive resin composition which mixed the reactive diluent and solvent which are described later, when copolymer 1 is manufactured by the above-mentioned radical copolymerization, propylene glycol monomethyl ether Glycol ester solvents such as acetates are preferably used.

라디칼 공중합 반응으로 얻어진 공중합체 1 중의 (b) 성분에 유래하는 측쇄 에폭시기에 (d) 성분인 불포화 일염기산을 반응시키려면 이하와 같이 실시한다. 즉, 불포화 일염기산이나 생성되는 불포화기 함유 공중합체의 중합에 의한 겔화를 막기 위해서 하이드로퀴논, 메틸하이드로퀴논, 하이드로퀴논 모노메틸에테르, 산소 등의 중합 방지제의 존재하, 또한 트리에틸아민과 같은 3급 아민, 트리에틸벤질암모늄 클로라이드와 같은 4급 암모늄염, 트리페닐포스핀과 같은 인 화합물, 크롬의 킬레이트 화합물 등의 촉매의 존재하, 통상 50~150℃ 정도, 바람직하게는 80~130℃에서 반응을 실시한다. 공중합체 1을 얻기 위한 라디칼 공중합 반응에서 유기 용매가 이용되었을 경우는 공중합체 1 유기 용매 용액의 상태인 채 이후의 반응에 이용할 수 있다.In order to make the unsaturated monobasic acid which is (d) component react with the side chain epoxy group derived from (b) component in the copolymer 1 obtained by the radical copolymerization reaction, it is carried out as follows. That is, in order to prevent gelation by polymerization of the unsaturated monobasic acid or the resulting unsaturated group-containing copolymer, in the presence of a polymerization inhibitor such as hydroquinone, methylhydroquinone, hydroquinone monomethyl ether, oxygen, and the like, triethylamine In the presence of a catalyst such as a tertiary amine, a quaternary ammonium salt such as triethylbenzylammonium chloride, a phosphorus compound such as triphenylphosphine, and a chelating compound of chromium, usually at 50 to 150 ° C, preferably at 80 to 130 ° C. Conduct the reaction. When an organic solvent is used in the radical copolymerization reaction to obtain copolymer 1, it can be used for subsequent reactions in the state of the copolymer 1 organic solvent solution.

이상의 반응에 의해, 측쇄로서 불포화기 및 수산기[카르복실기와 에폭시기의 반응에 의해 생긴 수산기 및 (a) 성분인 로진 (메타)아크릴레이트의 로진 골격 중에 원래 존재하고 있는 수산기]를 가지는 공중합체(1a)가 얻어진다.The copolymer (1a) which has an unsaturated group and a hydroxyl group as a side chain by the above reaction, and the hydroxyl group which exists originally in the rosin skeleton of rosin (meth) acrylate which is a hydroxyl group produced by reaction of a carboxyl group and an epoxy group, and (a) component. Is obtained.

그 공중합체(1a)의 수산기에 (e) 성분인 다염기산 무수물을 반응시킴으로써 본 발명의 감광성 수지 1이 얻어진다. 공중합체(1a)의 수산기와 다염기산 무수물의 반응은 상기 공중합체 1 중의 (b) 성분에 유래하는 측쇄의 에폭시기에 (d) 성분인 불포화 일염기산을 반응시킨 후, 그대로 (e) 성분을 원하는 양 첨가해 통상 50~150℃ 정도, 바람직하게는 80~130℃ 가열해 실시한다. 새롭게 촉매를 첨가할 필요는 없다.The photosensitive resin 1 of this invention is obtained by making the hydroxyl group of this copolymer (1a) react with the polybasic acid anhydride which is (e) component. Reaction of the hydroxyl group and polybasic acid anhydride of copolymer (1a) is made to react the unsaturated monobasic acid which is (d) component to the epoxy group of the side chain derived from (b) component in the said copolymer 1, and wants (e) component as it is. Both amounts are added, and about 50-150 degreeC normally, Preferably it carries out by heating at 80-130 degreeC. There is no need to add a new catalyst.

본 발명의 감광성 수지 1에서의 (a) 성분인 로진 (메타)아크릴레이트는 아비에트산 등에 존재하는 카르복실기에, 예를 들면 글리시딜 (메타)아크릴레이트나 3,4-에폭시시클로헥실메틸 (메타)아크릴레이트와 같은 에폭시기를 가지는 불포화 화합물을 반응시켜 불포화기인 (메타)아크릴로일기를 도입한 것이다.Rosin (meth) acrylate which is (a) component in the photosensitive resin 1 of this invention is a carboxyl group which exists in abies acid etc., for example, glycidyl (meth) acrylate, 3, 4- epoxycyclohexylmethyl ( An unsaturated compound having an epoxy group such as meth) acrylate is reacted to introduce a (meth) acryloyl group which is an unsaturated group.

대표적인 것으로서 이하와 같은 식 (1) 및 (2)로 표시되는 로진 변성 글리시딜 (메타)아크릴레이트를 들 수 있다.Typical examples include rosin-modified glycidyl (meth) acrylates represented by the following formulas (1) and (2).

Figure 112008081291700-PCT00001
Figure 112008081291700-PCT00001

상기 식 (1) 및 식 (2)에 있어서, R1은 수소 원자 또는 메틸기, R2는 단결합 또는 탄소수 1~30의 직쇄 또는 분기쇄를 가져도 되는 알킬렌기이다. 상기 식 (1) 및 식 (2)에 있어서, R1이 수소 원자이고, R2가 단결합인 것이 가장 입수하기 쉬워 바람직하다.In said Formula (1) and Formula (2), R <1> is a hydrogen atom or a methyl group, R <2> is a alkylene group which may have a single bond or a C1-C30 linear or branched chain. In said Formula (1) and Formula (2), it is preferable that R <1> is a hydrogen atom and R <2> is a single bond most easily, and is easy to obtain.

아울러, 하기 식 (3) 또는 (4)로 표시되는 로진 변성 시클로헥실메틸 (메타)아크릴레이트를 들 수 있다.Moreover, the rosin modified cyclohexyl methyl (meth) acrylate represented by following formula (3) or (4) is mentioned.

Figure 112008081291700-PCT00002
Figure 112008081291700-PCT00002

상기 식 (3) 및 식 (4)에 있어서, R1은 수소 원자 또는 메틸기이다.In said Formula (3) and Formula (4), R <1> is a hydrogen atom or a methyl group.

로진은 천연물로서 산지에 따라 성분이 약간 다르지만, 통상은 아비에트산, 네오아비에트산, 파라스트르산, 레보피마르산, 데히드로아비에트산, 디히드로아비에트산, 테트라히드로아비에트산 등의 혼합물이다. 통상은 아비에트산 및 네오아비에트산 및 이들의 디히드록시화물의 함유량이 가장 많다고 말해지고 있다. 상기 식 (1)에 있어서, R2가 단결합인 경우 아비에트산의 글리시딜 (메타)아크릴레이트이며, 상기 식 (2)에 있어서, R2가 단결합인 경우 네오아비에트산의 글리시딜 (메타)아크릴레이트이다. 이들 로진 (메타)아크릴레이트는 시판되고 있어 예를 들면, 아라카와화학의 2-히드록시프로필데히드로아비에트산아크릴레이트 「빔 세트 101」, 「빔 세트 102」, 「빔 세트 115」, 신나카무라 화학제 「K1000A」 및 「UNIRESIN K900B」등을 들 수 있다.Rosin is a natural product, and its ingredients differ slightly depending on the region, but usually mixtures of abietic acid, neo-abietic acid, parastric acid, levopimaric acid, dehydroabietic acid, dihydroabietic acid, tetrahydroavietic acid and the like to be. Usually, it is said that content of abiete acid and neo-abietic acid, and these dihydroxy compounds is the highest. In formula (1), when R <2> is a single bond, it is glycidyl (meth) acrylate of abiete acid, In the said Formula (2), when R <2> is a single bond, the glyc of neoabiete acid is Cydyl (meth) acrylate. These rosin (meth) acrylates are commercially available, for example, 2-hydroxypropyl dehydroabirate acrylate "beam set 101", "beam set 102", "beam set 115" of Arakawa Chemical, Shinnakamura Chemical. "K1000A", "UNIRESIN K900B", etc. are mentioned.

본 발명의 감광성 수지 1에서의 (b) 성분인 에폭시기를 가지는 라디칼 중합성 화합물로는 특별히 한정은 되지 않고, 예를 들면 글리시딜 (메타)아크릴레이트, 지환식 에폭시를 가지는 3,4-에폭시시클로헥실메틸 (메타)아크릴레이트 및 그 락톤 부가물 [예를 들면, 다이셀 화학공업(주)제 사이크로마 A200, M100], 3,4-에폭시시클로헥실메틸-3',4'-에폭시시클로헥산카르복실레이트의 모노(메타)아크릴산에스테르, 디시클로펜테닐 (메타)아크릴레이트의 에폭시화물, 디시클로펜테닐옥시에틸 (메타)아크릴레이트의 에폭시화물 등을 들 수 있지만, 원료 입수의 용이함으로부터 글리시딜 (메타)아크릴레이트 및 3,4-에폭시시클로헥실메틸 (메타)아크릴레이트가 바람직하게 이용된다. 이것들 1종 또는 2종 이상을 병용해도 된다.It does not specifically limit as a radically polymerizable compound which has an epoxy group which is (b) component in the photosensitive resin 1 of this invention, For example, 3, 4- epoxy which has glycidyl (meth) acrylate and an alicyclic epoxy Cyclohexylmethyl (meth) acrylate and its lactone adducts [e.g., Cychrom A200, M100 manufactured by Daicel Chemical Industries, Ltd.], 3,4-epoxycyclohexylmethyl-3 ', 4'-epoxycyclo Mono (meth) acrylic acid ester of hexanecarboxylate, epoxide of dicyclopentenyl (meth) acrylate, epoxide of dicyclopentenyloxyethyl (meth) acrylate, and the like. Glycidyl (meth) acrylate and 3,4-epoxycyclohexylmethyl (meth) acrylate are preferably used. You may use these 1 type or 2 or more types together.

본 발명의 감광성 수지 1에서의 (c) 성분인 (a) 및 (b) 이외의 라디칼 중합성 화합물로는 에틸렌성 불포화기를 가지는 것이면 특별히 한정되지 않는다. 그 구체예로는 스티렌, 스티렌의 α-, o-, m-, p-알킬, 니트로, 시아노, 아미드 유도체; 부타디엔, 2,3-디메틸부타디엔, 이소프렌, 클로로프렌 등의 디엔류; 메틸 (메타)아크릴레이트, 에틸 (메타)아크릴레이트, n-프로필 (메타)아크릴레이트, 이소-프로필 (메타)아크릴레이트, n-부틸 (메타)아크릴레이트, sec-부틸 (메타)아크릴레이트, tert-부틸 (메타)아크릴레이트, 펜틸 (메타)아크릴레이트, 네오펜틸 (메타)아크릴레이트, 이소아밀 (메타)아크릴레이트, 헥실 (메타)아크릴레이트, 2-에틸헥실 (메타)아크릴레이트, 라우릴 (메타)아크릴레이트, 도데실 (메타)아크릴레이트, 시클로펜틸 (메타)아크릴레이트, 시클로헥실 (메타)아크릴레이트, 2-메틸시클로헥실 (메타)아크릴레이트, 디시클로헥실 (메타)아크릴레이트, 이소보로닐(메타)아크릴레이트, 아다만틸 (메타)아크릴레이트, 디시클로펜테닐 (메타)아크릴레이트, 디시클로펜테닐옥시에틸 (메타)아크릴레이트, 트리시클로데카닐 (메타)아크릴레이트, 트리시클로데카닐옥시에틸 (메타)아크릴레이트, 알릴 (메타)아크릴레이트, 프로파길 (메타)아크릴레이트, 페닐 (메타)아크릴레이트, 나프틸 (메타)아크릴레이트, 안트라세닐 (메타)아크릴레이트, 안트라니노닐 (메타)아크릴레이트, 피페로닐 (메타)아크릴레이트, 살리실 (메타)아크릴레이트, 푸릴 (메타)아크릴레이트, 푸르푸릴 (메타)아크릴레이트, 테트라히드로푸릴 (메타)아크릴레이트, 피라닐 (메타)아크릴레이트, 벤질 (메타)아크릴레이트, 페네틸 (메타)아크릴레이트, 크레실 (메타)아크릴레이트, 1,1,1-트리플루오로에틸 (메타)아크릴레이트, 퍼플루오로에틸 (메타)아크릴레이트, 퍼플루오로-n-프로필 (메타)아크릴레이트, 퍼플루오로-이소-프로필 (메타)아크릴레이트, 트리페닐메틸 (메타)아크릴레이트, 쿠밀 (메타)아크릴레이트, 3-(N,N-디메틸아미노)프로필 (메타)아크릴레이트, 2-히드록시에틸 (메타)아크릴레이트, 2-히드록시프로필 (메타)아크릴레이트 등의 (메타)아크릴산 에스테르류; (메타)아크릴산아미드, (메타)아크릴산 N,N-디메틸아미드, (메타)아크릴산 N,N-디에틸아미드, (메타)아크릴산 N,N-디프로필아미드, (메타)아크릴산 N,N-디-이소프로필아미드, (메타)아크릴산 안트라세닐아미드 등의 (메타)아크릴산아미드; (메타)아크릴산아닐리드, (메타)아크릴로일니트릴, 아크롤레인, 염화비닐, 염화비닐리덴, 불화비닐, 불화비닐리덴, N-비닐피롤리돈, 비닐피리딘, 아세트산비닐 등의 비닐 화합물; 시트라콘산디에틸, 말레인산디에틸, 푸말산디에틸, 이타콘산디에틸 등의 불포화 디카르복시산에스테르; N-페닐말레이미드, N-시클로헥실말레이미드, N-라우릴말레이미드, N-(4-히드록시페닐)말레이미드 등의 모노말레이미드류; N-(메타)아크릴로일프탈이미드 등을 들 수 있다. 상기 중에서, 경화 도막의 강도나 내열성의 관점으로부터 스티렌, 벤질 (메타)아크릴레이트, 모노말레이미드류가 바람직하게 이용된다.As radically polymerizable compounds other than (a) and (b) which are (c) component in the photosensitive resin 1 of this invention, if it has an ethylenically unsaturated group, it will not specifically limit. Specific examples thereof include styrene, α-, o-, m-, p-alkyl, nitro, cyano and amide derivatives of styrene; Dienes such as butadiene, 2,3-dimethylbutadiene, isoprene and chloroprene; Methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, iso-propyl (meth) acrylate, n-butyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, neopentyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, la Uryl (meth) acrylate, dodecyl (meth) acrylate, cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, 2-methylcyclohexyl (meth) acrylate, dicyclohexyl (meth) acrylate , Isoboroyl (meth) acrylate, adamantyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, tricyclodecanyl (meth) acrylic Latex, tricyclodeca Oxyethyl (meth) acrylate, allyl (meth) acrylate, propargyl (meth) acrylate, phenyl (meth) acrylate, naphthyl (meth) acrylate, anthracenyl (meth) acrylate, anthraninonyl ( Meta) acrylate, piperonyl (meth) acrylate, salicylic (meth) acrylate, furyl (meth) acrylate, furfuryl (meth) acrylate, tetrahydrofuryl (meth) acrylate, pyranyl (meth) ) Acrylate, benzyl (meth) acrylate, phenethyl (meth) acrylate, cresyl (meth) acrylate, 1,1,1-trifluoroethyl (meth) acrylate, perfluoroethyl (meth) Acrylate, perfluoro-n-propyl (meth) acrylate, perfluoro-iso-propyl (meth) acrylate, triphenylmethyl (meth) acrylate, cumyl (meth) acrylate, 3- (N, N-dimethylamino) propyl (meth) arc Acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) (meth) acrylic acid esters such as acrylate; (Meth) acrylic acid amide, (meth) acrylic acid N, N-dimethylamide, (meth) acrylic acid N, N-diethylamide, (meth) acrylic acid N, N-dipropylamide, (meth) acrylic acid N, N-di (Meth) acrylic acid amides such as isopropylamide and (meth) acrylic anthracenylamide; Vinyl compounds such as (meth) acrylic acid acrylate, (meth) acryloylnitrile, acrolein, vinyl chloride, vinylidene chloride, vinyl fluoride, vinylidene fluoride, N-vinylpyrrolidone, vinylpyridine and vinyl acetate; Unsaturated dicarboxylic acid esters such as diethyl citrate, diethyl maleate, diethyl fumarate and diethyl itaconic acid; Monomaleimides such as N-phenylmaleimide, N-cyclohexyl maleimide, N-lauryl maleimide, and N- (4-hydroxyphenyl) maleimide; N- (meth) acryloyl phthalimide etc. are mentioned. Among the above, styrene, benzyl (meth) acrylate, and monomaleimide are preferably used from the viewpoint of the strength and heat resistance of the cured coating film.

이들의 1종 또는 2종 이상을 병용해도 된다.You may use together 1 type (s) or 2 or more types.

본 발명의 감광성 수지 1에서의 (d) 성분인 불포화 일염기산으로는, 특별히 한정은 되지 않고, 예를 들면 (메타)아크릴산, 크로톤산, 신남산 등을 들 수 있다. 또, 1개의 수산기와 1개 이상의 (메타)아크릴로일기를 가지는 다관능 (메타)아크릴레이트 (예를 들면, 히드록시에틸 (메타)아크릴레이트, 히드록시프로필 (메타)아크릴레이트, 히드록시부틸 (메타)아크릴레이트, 트리메틸올프로판 디(메타)아크릴레이트 등)와 다염기산 무수물의 반응물 등도 이용할 수 있다. 이것들 1종 또는 2종 이상을 병용해도 된다.It does not specifically limit as unsaturated monobasic acid which is (d) component in the photosensitive resin 1 of this invention, For example, (meth) acrylic acid, crotonic acid, cinnamic acid, etc. are mentioned. Moreover, the polyfunctional (meth) acrylate which has one hydroxyl group and one or more (meth) acryloyl groups (for example, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl) (Meth) acrylate, trimethylolpropane di (meth) acrylate, etc.) and the reaction product of polybasic acid anhydride, etc. can also be used. You may use these 1 type or 2 or more types together.

상기 중에서, (메타)아크릴산이 바람직하게 이용된다. 이것들은 1종 또는 2종 이상을 병용해도 된다.Among the above, (meth) acrylic acid is preferably used. These may use together 1 type (s) or 2 or more types.

본 발명의 감광성 수지 1에서의 (e) 성분인 다염기산 무수물로는 특별히 한정은 되지 않고, 예를 들면 무수 숙신산, 무수 말레산, 무수 시트라콘산, 무수 이타콘산, 무수 프탈산, 테트라히드로 무수 프탈산, 메틸테트라히드로 무수 프탈산, 헥사히드로 무수 프탈산, 무수 트리멜리트산, 무수 피로멜리트산 등을 들 수 있다.It does not specifically limit as polybasic acid anhydride which is (e) component in the photosensitive resin 1 of this invention, For example, succinic anhydride, maleic anhydride, citraconic acid, itaconic anhydride, phthalic anhydride, tetrahydro phthalic anhydride, Methyl tetrahydro phthalic anhydride, hexahydro phthalic anhydride, trimellitic anhydride, a pyromellitic dianhydride, etc. are mentioned.

상기 중에서, 테트라히드로 무수 프탈산, 무수 숙신산이 바람직하게 이용된다. 이들의 1종 또는 2종 이상을 병용해도 된다.In the above, tetrahydro phthalic anhydride and succinic anhydride are preferably used. You may use together 1 type (s) or 2 or more types.

다음에, 본 발명의 감광성 수지 2에 대하여 설명한다.Next, the photosensitive resin 2 of the present invention will be described.

감광성 수지 2의 전구체인 공중합체 2는 측쇄에 상기 감광성 수지 1로 이용하는 것과 같은 모노머 성분 (a), (c) 및 (d)에 유래하는 골격을 가지고 있고, 그 공중합 비율은 (a)가 5~30몰%, 바람직하게는 5~25몰%, 더욱 바람직하게는 10~25몰%, (d)가 20~60몰%, 바람직하게는 30~55몰%, 더욱 바람직하게는 40~50몰% 및 (c)가 10~75몰%, 바람직하게는 20~65몰%, 더욱 바람직하게는 25~50몰%이며, 그 합계는 100몰%이다.Copolymer 2, which is a precursor of photosensitive resin 2, has a skeleton derived from the monomer components (a), (c) and (d) as used in the photosensitive resin 1 in the side chain, and the copolymerization ratio of (a) is 5 30 mol%, Preferably 5-25 mol%, More preferably, 10-25 mol%, (d) is 20-60 mol%, Preferably 30-55 mol%, More preferably, 40-50 10 mol%-75 mol%, Preferably it is 20-65 mol%, More preferably, it is 25-50 mol%, The sum total is 100 mol%.

감광성 수지 2에서의 (a) 성분은 감광성 수지 1로 이용하는 것과 같고, 그 사용 몰비를 5~30몰%로 하는 이유도 감광성 수지 1의 경우와 같다.The component (a) in the photosensitive resin 2 is the same as that used for the photosensitive resin 1, and the reason why the use molar ratio is 5-30 mol% is also the same as that of the photosensitive resin 1.

감광성 수지 2에서의 (d) 성분도 감광성 수지 1로 이용되는 것과 같은 화합물이지만, 감광성 수지 1의 경우와는 역할이 달라, 라디칼 공중합의 단계에서 공중합체 2의 측쇄에 카르복실기를 존재시키기 위해서 이용된다. 따라서, (d) 성분의 사용량은 감광성 수지 1의 경우와는 달라 로진 (메타)아크릴레이트 (a)의 5~30몰%에 대해서 (d) 성분이 20~60몰%의 비율이다.The component (d) in the photosensitive resin 2 is also the same compound as used for the photosensitive resin 1, but differs from the case for the photosensitive resin 1, and is used for the presence of a carboxyl group in the side chain of the copolymer 2 in the step of radical copolymerization. Therefore, unlike the case of photosensitive resin 1, the usage-amount of (d) component is the ratio of 20-60 mol% of (d) component with respect to 5-30 mol% of rosin (meth) acrylate (a).

감광성 수지 2에서의 (c) 성분은 감광성 수지 1로 이용되는 것과 같고, 그 사용 몰비를 10~75몰%로 하는 이유도 감광성 수지 1의 경우와 같다. 즉, (a) 성분 및 (d) 성분의 사용 비율에 의해 필연적으로 상기 범위가 결정된다.(C) component in photosensitive resin 2 is the same as what is used by photosensitive resin 1, and the reason for making the use molar ratio 10-75 mol% is also the same as that of the photosensitive resin 1. That is, the said range is necessarily determined by the usage ratio of (a) component and (d) component.

공중합체 2를 제조하기 위한 라디칼 공중합은 각 성분의 몰비가 다른 것 이외에는 공중합체 1을 제조하기 위한 라디칼 공중합과 같은 조건으로 행해진다.Radical copolymerization for producing copolymer 2 is carried out under the same conditions as radical copolymerization for producing copolymer 1 except that the molar ratio of each component is different.

상기와 같이 하여 제조된 공중합체 2는 측쇄에 카르복실기가 존재하고 있고, 그 다음에 이 카르복실기에 (b) 성분인 에폭시기를 가지는 라디칼 중합성 화합물을 반응시킴으로써 카르복실기의 일부를 불포화기로 변환시킨다. (b) 성분인 에폭시기를 가지는 라디칼 중합성 화합물의 사용량은 공중합체 2의 측쇄에 존재하고 있는 카르복실기 100몰에 대해서 5~80몰이다. 5~80몰로 조절함으로써, 카르복실기와 불포화기의 밸런스가 좋아 감광성 수지 2의 경화성 및 알칼리에 의한 현상성이 적절히 유지된다.Copolymer 2 prepared as described above converts a part of the carboxyl groups to an unsaturated group by reacting a carboxyl group in the side chain, and then reacting this carboxyl group with a radically polymerizable compound having an epoxy group as the component (b). The usage-amount of the radically polymerizable compound which has an epoxy group (b) component is 5-80 mol with respect to 100 mol of carboxyl groups which exist in the side chain of copolymer 2. By adjusting it to 5-80 mol, the balance of a carboxyl group and an unsaturated group is good, and the hardenability of the photosensitive resin 2 and developability by alkali are suitably maintained.

공중합체 2 중의 카르복실기에 (b) 성분인 에폭시기를 가지는 라디칼 중합성 화합물을 반응시킬 때의 조건은 각 성분의 몰비 이외에는 공중합체 1의 에폭시기에 (d) 성분인 불포화 일염기산을 반응시키는 경우와 같은 조건이다.The conditions when reacting the radically polymerizable compound which has the epoxy group which is (b) component in the carboxyl group in copolymer 2 react with the unsaturated monobasic acid which is (d) component in the epoxy group of copolymer 1 except the molar ratio of each component, Same condition.

이상과 같은 조건에 의해, 얻어지는 감광성 수지 1 및 감광성 수지 2의 산가 (JIS K6901)을 20~150 KOH㎎/g의 범위로 조절할 수 있어, 상기 수지를 기판에 도포한 후에 행해지는 알칼리에 의한 현상성을 조절할 수 있다. 산가를 20 KOH㎎/g 이상으로 함으로써, 알칼리에 의한 현상성이 저하하는 것을 방지한다. 산가를 150 KOH㎎/g 이하로 함으로써, 패터닝을 확실히 행할 수 있게 된다.Under the above conditions, the acid value (JIS K6901) of the obtained photosensitive resin 1 and photosensitive resin 2 can be adjusted to the range of 20-150 KOHmg / g, and the image development by alkali performed after apply | coating the said resin to a board | substrate You can adjust the sex. By making an acid value 20 KOHmg / g or more, the developability by alkali is prevented from falling. By setting the acid value to 150 KOHmg / g or less, the patterning can be surely performed.

산가는 바람직하게는 30~140 KOH㎎/g, 더욱 바람직하게는 40~130 KOH㎎/g이다.The acid value is preferably 30 to 140 KOHmg / g, more preferably 40 to 130 KOHmg / g.

이상과 같이 하여 얻어진 본 발명의 감광성 수지 1 및 감광성 수지 2에 있어서는 중량 평균 분자량 (GPC법에 따르는 폴리스티렌 환산의 수치)은 통상은 3000~100000이며, 바람직하게는 5000~40000이다. 중량 평균 분자량을 3000 이상으로 함으로써 내열성이 뒤떨어지는 것을 방지하고, 100000 이하로 함으로써 현상성이 저하하는 것을 방지한다.In the photosensitive resin 1 and photosensitive resin 2 of this invention obtained as mentioned above, the weight average molecular weight (numerical value of polystyrene conversion by GPC method) is 3000-100000 normally, Preferably it is 5000-4000. By setting the weight average molecular weight to 3000 or more, the inferior heat resistance is prevented, and by setting it to 100000 or less, the developability is prevented from decreasing.

이상과 같이 하여 얻어진 감광성 수지 1 및/또는 감광성 수지 2에 반응성 희석제 (f) 및 필요에 따라 용매 (g)를 첨가함으로써 감광성 수지 조성물이 얻어진다.The photosensitive resin composition is obtained by adding the reactive diluent (f) and the solvent (g) as needed to the photosensitive resin 1 and / or photosensitive resin 2 obtained as mentioned above.

사용할 수 있는 반응성 희석제 (f)로는 감광성 수지 1 및/또는 감광성 수지 2와 반응 가능한 것이면 특별히 제한은 되지 않는다. 예를 들면, 스티렌, α-메틸스티렌, α-클로로메틸스티렌, 비닐톨루엔, 디비닐벤젠, 디알릴프탈레이트, 디알릴벤젠포스포네이트 등의 방향족 비닐계 모노머류; 아세트산비닐, 아디프산비닐 등의 폴리카르복시산 모노머류; 메틸 (메타)아크릴레이트, 에틸 (메타)아크릴레이트, 프로필 (메타)아크릴레이트, 부틸 (메타)아크릴레이트, β-히드록시에틸 (메타)아크릴레이트, 히드록시프로필 (메타)아크릴레이트, 에틸렌글리콜 디(메타)아크릴레이트, 디에틸렌글리콜 디(메타)아크릴레이트, 프로필렌글리콜 디(메타)아크릴레이트, 에틸렌글리콜 디(메타)아크릴레이트, 트리메틸올프로판 디(메타)아크릴레이트, 트리메틸올프로판 트리(메타)아크릴레이트, 펜타에리트리톨 테트라(메타)아크릴레이트, 디펜타에리트리톨 헥사(메타)아크릴레이트, 트리스(히드록시에틸)이소시아누레이트의 트리(메타)아크릴레이트 등의 (메타)아크릴계 모노머; 트리알릴시아누레이트 등을 들 수 있다. 이들의 1종 또는 2종 이상을 병용해도 된다.The reactive diluent (f) that can be used is not particularly limited as long as it can react with the photosensitive resin 1 and / or the photosensitive resin 2. For example, Aromatic vinyl monomers, such as styrene, (alpha) -methylstyrene, (alpha)-chloromethylstyrene, vinyltoluene, divinylbenzene, diallyl phthalate, and diallylbenzene phosphonate; Polycarboxylic acid monomers such as vinyl acetate and vinyl adipic acid; Methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, β-hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, ethylene glycol Di (meth) acrylate, diethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, ethylene glycol di (meth) acrylate, trimethylolpropane di (meth) acrylate, trimethylolpropane tri ( (Meth) acrylic monomers such as tri (meth) acrylate of meta) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and tris (hydroxyethyl) isocyanurate ; Triallyl cyanurate, etc. are mentioned. You may use together 1 type (s) or 2 or more types.

반응성 희석제 (f)의 첨가량은 감광성 수지 1 및/또는 감광성 수지 2의 100중량부에 대해서, 통상은 10~200중량부, 바람직하게는 20~150중량부이다.The addition amount of reactive diluent (f) is 10-200 weight part normally with respect to 100 weight part of photosensitive resin 1 and / or photosensitive resin 2, Preferably it is 20-150 weight part.

상기 범위로 함으로써, 광경화성을 적정한 범위로 유지할 수 있고, 나아가 점도를 조정할 수도 있다.By setting it as said range, photocurability can be maintained in an appropriate range, and also a viscosity can also be adjusted.

사용하는 반응성 희석제 (f)의 종류에 따라서는 점도를 저하시키기 위해서 추가로 용매 (g)를 사용할 수 있다.Depending on the kind of reactive diluent (f) used, a solvent (g) can be used further in order to reduce a viscosity.

사용할 수 있는 용매 (g)로는 감광성 수지 1 및/또는 감광성 수지 2, 및 반응성 희석제 (f)와 반응하지 않는 불활성인 용매이면 제한없이 사용할 수 있다.As a solvent (g) which can be used, if it is an inert solvent which does not react with photosensitive resin 1 and / or photosensitive resin 2, and a reactive diluent (f), it can use without a restriction | limiting.

이용할 수 있는 용매 (g)로는 프로필렌글리콜 모노메틸에테르, 프로필렌글리콜 모노메틸에테르 아세테이트, 디프로필렌글리콜 모노메틸에테르 아세테이트, 아세트산에틸, 아세트산부틸, 아세트산이소프로필, 프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노메틸에테르, 트리프로필렌글리콜 모노메틸에테르, 에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노메틸에테르, 메틸에틸케톤, 메틸이소부틸케톤, 시클로헥사논, 에틸렌글리콜 모노에틸에테르 아세테이트, 디에틸렌글리콜 에틸에테르 아세테이트 등을 들 수 있다. 이들 중에서는 상기 라디칼 중합 반응에서 바람직하게 사용되는 프로필렌글리콜 모노메틸에테르 아세테이트가 바람직하게 이용된다.Solvents (g) which can be used include propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, dipropylene glycol monomethyl ether acetate, ethyl acetate, butyl acetate, isopropyl acetate, propylene glycol monomethyl ether and dipropylene glycol monomethyl. Ether, tripropylene glycol monomethyl ether, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, ethylene glycol monoethyl ether acetate, diethylene glycol ethyl ether acetate and the like. Can be mentioned. In these, the propylene glycol monomethyl ether acetate used preferably at the said radical polymerization reaction is used preferably.

용매 (g)의 첨가량은 감광성 수지 1 및/또는 감광성 수지 2의 100중량부에 대해서 통상은 30~1000중량부, 바람직하게는 50~800중량부이다.The addition amount of solvent (g) is 30-1000 weight part normally with respect to 100 weight part of photosensitive resin 1 and / or photosensitive resin 2, Preferably it is 50-800 weight part.

상기 범위로 함으로써, 점도를 적당히 유지할 수 있다.By setting it as the said range, a viscosity can be maintained moderately.

본 발명의 감광성 수지 조성물은 활성 에너지선으로서 자외선 등의 활성 광을 이용해 광경화시키는 경우, 광중합 개시제를 첨가할 수 있다. 이용할 수 있는 광중합 개시제로는 특별히 한정은 되지 않지만, 예를 들면 벤조인, 벤조인메틸에테르, 벤조인에틸에테르 등의 벤조인과 그 알킬에테르류; 아세토페논, 2,2-디메톡시-2-페닐아세토페논, 1,1-디클로로아세토페논, 4-(1-t-부틸디옥시-1-메틸에틸)아세토페논 등의 아세토페논류; 2-메틸안트라퀴논, 2-아밀안트라퀴논, 2-t-부틸안트라퀴논, 1-클로로안트라퀴논 등의 안트라퀴논류; 2,4-디메틸티옥산톤, 2,4-디이소프로필티옥산톤, 2-클로로티옥산톤 등의 티옥산톤류; 아세토페논디메틸케탈, 벤질디메틸케탈 등의 케탈류; 벤조페논, 4-(1-t-부틸디옥시-1-메틸에틸)벤조페논, 3,3',4,4'-테트라키스(t-부틸디옥시카르보닐)벤조페논 등의 벤조페논류; 2-메틸-1-[4-(메틸티오)페닐]-2-모르폴리노-프로판-1-온이나 2-벤질-2-디메틸아미노-1-(4-모르폴리노페닐)부타논-1; 아실포스핀옥사이드류 및 크산톤류 등을 들 수 있다. 이것들 1종 또는 2종 이상을 병용해도 된다. 광중합 개시제의 배합량은 본 발명의 감광성 수지 조성물 중의 고형분 100중량부에 대해서, 통상 0.1~30중량부, 바람직하게는 0.5~20중량부, 더욱 바람직하게는 1~10중량부이다. 0.1~30중량부로 함으로써, 광경화성을 적정한 범위로 유지할 수 있다.When the photosensitive resin composition of this invention is photocured using active light, such as an ultraviolet-ray, as an active energy ray, a photoinitiator can be added. Although it does not specifically limit as a photoinitiator which can be used, For example, benzoin, such as benzoin, benzoin methyl ether, benzoin ethyl ether, and its alkyl ether; Acetophenones such as acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 1,1-dichloroacetophenone, and 4- (1-t-butyldioxy-1-methylethyl) acetophenone; Anthraquinones such as 2-methylanthraquinone, 2-amyl anthraquinone, 2-t-butylanthraquinone and 1-chloroanthraquinone; Thioxanthones such as 2,4-dimethyl thioxanthone, 2,4-diisopropyl thioxanthone, and 2-chlorothioxanthone; Ketals such as acetophenone dimethyl ketal and benzyl dimethyl ketal; Benzophenones such as benzophenone, 4- (1-t-butyldioxy-1-methylethyl) benzophenone, 3,3 ', 4,4'-tetrakis (t-butyldioxycarbonyl) benzophenone ; 2-methyl-1- [4- (methylthio) phenyl] -2-morpholino-propane-1-one or 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) butanone- One; Acyl phosphine oxides, xanthones, etc. are mentioned. You may use these 1 type or 2 or more types together. The compounding quantity of a photoinitiator is 0.1-30 weight part normally with respect to 100 weight part of solid content in the photosensitive resin composition of this invention, Preferably it is 0.5-20 weight part, More preferably, it is 1-10 weight part. By setting it as 0.1-30 weight part, photocurability can be maintained in a suitable range.

더욱이, 본 발명의 감광성 수지 조성물은 필요에 따라 공지의 착색제나, 소포제, 커플링제, 레벨링제 등을 함유할 수 있다. Moreover, the photosensitive resin composition of this invention can contain a well-known coloring agent, an antifoamer, a coupling agent, a leveling agent, etc. as needed.

상기와 같이, 본 발명의 감광성 수지 1 및 감광성 수지 2는 산가가 20~150 KOH㎎/g이므로, 그것들을 포함한 감광성 수지 조성물을 이용한 레지스트류는 알칼리 수용액을 이용해 현상을 행할 수 있다.As mentioned above, since the acid value of the photosensitive resin 1 and the photosensitive resin 2 of this invention is 20-150 KOHmg / g, the resists using the photosensitive resin composition containing them can develop using aqueous alkali solution.

본 발명의 감광성 수지 조성물은, 예를 들어 프린트 배선 기판 상에 스크린 인쇄법, 롤 코터법, 커텐 코터법, 스프레이 코터법, 스핀 코트법 등으로 도포되고 필요 부분을 광 경화시킨 후, 그의 미경화 (미노광) 부분을 알칼리 수용액으로 흘려 씻음으로써 현상을 한다.The photosensitive resin composition of this invention is apply | coated by the screen printing method, the roll coater method, the curtain coater method, the spray coater method, the spin coat method, etc. on a printed wiring board, for example, and photocures the required part, and the uncured thing The development is performed by washing the (unexposed) part with an aqueous alkali solution.

현상에 사용되는 알칼리 수용액으로는 탄산나트륨, 탄산칼륨, 탄산칼슘, 수산화나트륨 등의 수용액, 아민계로는 아미노페놀계 화합물도 유용하지만, p-페닐렌디아민계 화합물이 바람직하게 사용되고, 그 대표예로서 3-메틸-4-아미노-N,N-디에틸아닐린, 3-메틸-4-아미노-N-에틸-N-β-히드록시에틸아닐린, 3-메틸-4-아미노-N-에틸-N-β-메탄술폰아미드에틸아닐린, 3-메틸-4-아미노-N-에틸-N-β-메톡시에틸아닐린 및 이들의 황산염, 염산염 혹은 p-톨루엔술폰산염의 수용액을 들 수 있다.As the aqueous alkali solution used for development, aqueous solutions such as sodium carbonate, potassium carbonate, calcium carbonate and sodium hydroxide, and amino phenol compounds are also useful as amine compounds, but p-phenylenediamine compounds are preferably used. -Methyl-4-amino-N, N-diethylaniline, 3-methyl-4-amino-N-ethyl-N-β-hydroxyethylaniline, 3-methyl-4-amino-N-ethyl-N- β-methanesulfonamide ethylaniline, 3-methyl-4-amino-N-ethyl-N-β-methoxyethylaniline, and an aqueous solution of sulfate, hydrochloride or p-toluenesulfonate thereof.

광 조사해 도포면을 경화시킬 때에 이용되는 광원으로는 저압 수은 램프, 중압 수은 램프, 고압 수은 램프, 크세논 램프, 메탈할라이드 램프 등이 이용된다.Low-pressure mercury lamps, medium-pressure mercury lamps, high-pressure mercury lamps, xenon lamps, metal halide lamps, and the like are used as light sources used for curing the coated surface by light irradiation.

이하, 실시예 및 비교예를 나타내어 본 발명을 구체적으로 설명하지만, 본 발명은 이들 예에 의해서 전혀 한정되는 것은 아니다.Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not limited at all by these examples.

또한, 부 및 퍼센트인 것은 특별히 미리 말해두지 않는 이상 모두 중량 기준이다. 공중합체의 분자량은 GPC (겔 투과 크로마토그래피)에 의해 측정한 폴리스티렌 환산의 중량 평균 분자량 (Mw)이다.In addition, all parts and percentages are based on weight unless otherwise specified. The molecular weight of the copolymer is the weight average molecular weight (Mw) in terms of polystyrene measured by GPC (gel permeation chromatography).

<합성예 1>Synthesis Example 1

교반 장치, 적하 로트, 콘덴서, 온도계, 가스 도입관을 구비한 플라스크에 프로필렌글리콜 모노메틸에테르 아세테이트 137부를 취하고, 질소 치환하면서 교반해 120℃로 승온했다.137 parts of propylene glycol monomethyl ether acetates were taken to the flask provided with the stirring apparatus, the dropping lot, the condenser, the thermometer, and the gas introduction tube, and it stirred, replacing by nitrogen, and heated up at 120 degreeC.

다음에, 벤질메타크릴레이트 70부, 글리시딜메타크릴레이트 71부 및 로진아크릴레이트 [아라카와화학공업(제) 빔세트 101] 43부로 이루어진 모노머 혼합물에 t-부틸퍼옥시-2-에틸헥사노에이트 [일본유지(제) 퍼부틸O]를 모노머 혼합물 100부에 대해 9부를 첨가했다. 이것을 적하 로트로부터 2시간에 걸쳐 플라스크에 첨가하고, 추가로 120℃에서 2시간 교반하여 공중합체 1의 용액을 얻었다.Next, t-butylperoxy-2-ethylhexano was added to a monomer mixture consisting of 70 parts of benzyl methacrylate, 71 parts of glycidyl methacrylate, and 43 parts of rosin acrylate (Arakawa Chemical Co., Ltd. beamset 101). Eight [Japanese fats and oils perbutyl O] was added 9 parts with respect to 100 parts of monomer mixtures. This was added to the flask over 2 hours from the dropping lot, and further stirred at 120 degreeC for 2 hours, and the solution of copolymer 1 was obtained.

다음에, 플라스크 내를 공기로 치환하고, 아크릴산 35부, 트리페닐포스핀을 0.66부 및 메틸하이드로퀴논 0.15부를 상기 공중합체 1의 용액 중에 투입하고 120℃에서 반응을 계속해 고형분의 산가가 0.8 KOH㎎/g가 되었을 때 반응을 종료해 공중합체 1a의 용액을 얻었다. 그 다음에, 테트라히드로 무수프탈산 61부를 첨가하고 115℃에서 2시간 반응시킴으로써 고형분 산가 76 KOH㎎/g의 알칼리 현상 가능한 감광성 수지 1 (Mw: 17000)의 용액을 얻었다.Subsequently, the flask was replaced with air, 35 parts of acrylic acid, 0.66 parts of triphenylphosphine and 0.15 parts of methylhydroquinone were added to the solution of Copolymer 1, and the reaction was continued at 120 ° C., where the acid value of the solid content was 0.8 KOHmg. When it became / g, reaction was complete | finished and the solution of copolymer 1a was obtained. Subsequently, 61 parts of tetrahydrophthalic anhydride were added and reacted at 115 degreeC for 2 hours, and the solution of alkali developable photosensitive resin 1 (Mw: 17000) of 76 KOHmg / g of solid content acid value was obtained.

<합성예 2>Synthesis Example 2

프로필렌글리콜 모노메틸에테르 아세테이트를 165부로, 벤질메타크릴레이트를 44부로, 로진아크릴레이트를 108부로, 트리페닐포스핀을 0.77부로, 메틸하이드로퀴논을 0.18부로 각각 변경한 것 이외에는 합성예 1과 같게 실시해 고형분 산가 66 KOH㎎/g의 알칼리 현상 가능한 감광성 수지 1 (Mw: 20000)의 용액을 얻었다.Proceed as in Synthesis Example 1 except for changing propylene glycol monomethyl ether acetate to 165 parts, benzyl methacrylate to 44 parts, rosin acrylate to 108 parts, triphenylphosphine to 0.77 parts, and methylhydroquinone to 0.18 parts, respectively. A solution of alkali developable photosensitive resin 1 (Mw: 20000) having a solid acid value of 66 KOH mg / g was obtained.

<합성예 3>Synthesis Example 3

교반 장치, 적하 로트, 콘덴서, 온도계, 가스 도입관을 구비한 플라스크에 프로필렌글리콜 모노메틸에테르 아세테이트 382부를 취하고, 질소 치환하면서 교반해 120℃로 승온했다. 다음에, 벤질메타크릴레이트 76부, 메타크릴산 40부 및 로진아크릴레이트 [아라카와화학공업(제) 빔세트 101] 43부로 이루어진 모노머 혼합물에 퍼부틸O를 모노머 혼합물 100부에 대해 1부를 첨가했다. 이것을 적하 로트로부터 2시간에 걸쳐 플라스크에 적하하고, 추가로 120℃에서 2시간 교반해 공중합체 2의 용액을 얻었다. 다음에, 플라스크 내를 공기 치환으로 바꾸고 글리시딜메타크리레이트 21부, 트리페닐포스핀 0.54부 및 메틸하이드로퀴논 0.11부를 상기 공중합체 2의 용액 중에 투입하고 120℃에서 반응을 계속해 고형분 산가가 97 KOH㎎/g가 되었을 때 반응을 종료해 알칼리 현상 가능한 감광성 수지 2 (Mw:30000)의 용액을 얻었다.382 parts of propylene glycol monomethyl ether acetates were taken to the flask provided with the stirring apparatus, the dropping lot, the condenser, the thermometer, and the gas introduction tube, and it stirred, replacing with nitrogen, and heated up at 120 degreeC. Next, 1 part of perbutyl O was added to 100 parts of monomer mixtures to the monomer mixture consisting of 76 parts of benzyl methacrylate, 40 parts of methacrylic acid and 43 parts of rosin acrylate (Arakawa Chemical Co., Ltd. beamset 101). . This was dripped at the flask over 2 hours from the dropping lot, and also it stirred at 120 degreeC for 2 hours, and obtained the solution of copolymer 2. Subsequently, the flask was replaced with air replacement, 21 parts of glycidyl methacrylate, 0.54 part of triphenylphosphine and 0.11 part of methylhydroquinone were added to the solution of Copolymer 2, and the reaction was continued at 120 ° C. to give a solid acid value of 97. When it became KOHmg / g, reaction was complete | finished and the solution of photosensitive resin 2 (Mw: 30000) which can be alkali-developed was obtained.

<합성예 4>Synthesis Example 4

프로필렌글리콜 모노메틸에테르 아세테이트를 474부로, 벤질메타크릴레이트를 49부로, 로진아크릴레이트를 108부로, 트리페닐포스핀을 0.66부로, 메틸하이드로퀴논을 0.13부로 각각 변경한 것 이외에는 합성예 3과 같게 실시해 고형분 산가 80 KOH㎎/g의 알칼리 현상 가능한 감광성 수지 2 (Mw:38000)의 용액을 얻었다.Proceed as in Synthesis Example 3 except for changing propylene glycol monomethyl ether acetate to 474 parts, benzyl methacrylate to 49 parts, rosin acrylate to 108 parts, triphenylphosphine to 0.66 parts, and methylhydroquinone to 0.13 parts, respectively. A solution of alkali developable photosensitive resin 2 (Mw: 38000) having a solid acid value of 80 KOH mg / g was obtained.

<합성예 5>Synthesis Example 5

프로필렌글리콜 모노메틸에테르 아세테이트를 120부로, 벤질메타크릴레이트 70부를 비닐톨루엔 47부로, 트리페닐포스핀을 0.59부로, 메틸하이드로퀴논을 0.15부로 각각 변경한 것 이외에는 합성예 1과 같게 실시해 고형분 산가 83 KOH㎎/g의 알칼리 현상 가능한 감광성 수지 1 (Mw: 19000)의 용액을 얻었다.The solid acid value was 83 KOH in the same manner as in Synthesis Example 1 except that 120 parts of propylene glycol monomethyl ether acetate, 70 parts of benzyl methacrylate, 47 parts of vinyltoluene, 0.59 parts of triphenylphosphine, and 0.15 parts of methylhydroquinone were changed. The solution of mg / g alkali developable photosensitive resin 1 (Mw: 19000) was obtained.

<합성예 6>Synthesis Example 6

프로필렌글리콜 모노메틸에테르 아세테이트를 154부로, 벤질메타크릴레이트 70부를 비닐톨루엔 30부로, 로진아크릴레이트를 108부로, 트리페닐포스핀을 0.73부로, 메틸하이드로퀴논을 0.17부로 각각 변경한 것 이외에는 합성예 1과 같게 실시해 고형분 산가 70 KOH㎎/g의 알칼리 현상 가능한 감광성 수지 1 (Mw: 22000)의 용액을 얻었다.Synthesis Example 1 except changing propylene glycol monomethyl ether acetate to 154 parts, benzyl methacrylate 70 parts to vinyl toluene 30 parts, rosin acrylate to 108 parts, triphenylphosphine to 0.73 parts, and methylhydroquinone to 0.17 parts, respectively. It carried out similarly and obtained the solution of alkali developable photosensitive resin 1 (Mw: 22000) of 70 KOHmg / g of solid acid value.

<합성예 7>Synthesis Example 7

프로필렌글리콜 모노메틸에테르 아세테이트를 322부로, 벤질메타크릴레이트 70부를 비닐톨루엔 51부로, 트리페닐포스핀을 0.47부로, 메틸하이드로퀴논을 0.09부로 각각 변경한 것 이외에는 합성예 3과 같게 실시해 고형분 산가 113 KOH㎎/g의 알칼리 현상 가능한 감광성 수지 2 (Mw: 33000)의 용액을 얻었다. Solid content acidity 113 KOH was carried out in the same manner as in Synthesis Example 3 except that propylene glycol monomethyl ether acetate was changed to 322 parts, benzyl methacrylate 70 parts to vinyltoluene 51 parts, triphenylphosphine to 0.47 parts, and methylhydroquinone to 0.09 parts, respectively. The solution of mg / g alkali developable photosensitive resin 2 (Mw: 33000) was obtained.

<합성예 8>Synthesis Example 8

프로필렌글리콜 모노메틸에테르 아세테이트를 435부로, 벤질메타크릴레이트 70부를 비닐톨루엔을 33부로, 로진아크릴레이트를 108부로, 트리페닐포스핀을 0.61부로, 메틸하이드로퀴논을 0.12부로 각각 변경한 것 이외에는 합성예 3과 같게 실시해 고형분 산가 86 KOH㎎/g의 알칼리 현상 가능한 감광성 수지 2 (Mw: 39000)의 용액을 얻었다.Synthesis example except for changing propylene glycol monomethyl ether acetate to 435 parts, benzyl methacrylate 70 parts to vinyl toluene 33 parts, rosin acrylate to 108 parts, triphenylphosphine to 0.61 parts, and methylhydroquinone to 0.12 parts, respectively. It carried out similarly to 3, and obtained the solution of alkali developable photosensitive resin 2 (Mw: 39000) of solid content acid value 86 KOHmg / g.

<비교 합성예 1>Comparative Synthesis Example 1

프로필렌글리콜 모노메틸에테르 아세테이트를 118부로, 벤질메타크릴레이트를 88부로, 트리페닐포스핀을 0.58부로, 메틸하이드로퀴논을 0.14부로 각각 변경하고, 로진아크릴레이트를 사용하지 않았던 것 이외에는 합성예 1과 같게 실시해 고형분 산가 83 KOH㎎/g의 알칼리 현상 가능한 비교용 감광성 수지 (Mw: 12000)의 용액을 얻었다.Propylene glycol monomethyl ether acetate was changed to 118 parts, benzyl methacrylate to 88 parts, triphenylphosphine to 0.58 parts, and methylhydroquinone to 0.14 parts, respectively, except that rosin acrylate was not used. It carried out and obtained the solution of the comparative photosensitive resin (Mw: 12000) which is alkali developable of solid content acid value 83KOHmg / g.

<비교 합성예 2>Comparative Synthesis Example 2

프로필렌글리콜 모노메틸에테르 아세테이트를 321부로, 벤질메타크릴레이트 를 93부로, 트리페닐포스핀을 0.47부로, 메틸하이드로퀴논을 0.09부로 각각 변경하고, 로진아크릴레이트를 사용하지 않았던 것 이외에는 합성예 3과 같게 실시해 고형분 산가 113 KOH㎎/g의 알칼리 현상 가능한 비교용 감광성 수지 (Mw: 20000)의 용액을 얻었다.Propylene glycol monomethyl ether acetate was changed to 321 parts, benzyl methacrylate to 93 parts, triphenylphosphine to 0.47 parts, and methylhydroquinone to 0.09 parts, respectively, except that rosin acrylate was not used. It carried out and obtained the solution of the comparative photosensitive resin (Mw: 20000) of alkali developability of solid content acid value 113KOHmg / g.

<비교 합성예 3>Comparative Synthesis Example 3

프로필렌글리콜 모노메틸에테르 아세테이트를 96부로, 벤질메타크릴레이트 70부를 비닐톨루엔 59부로, 트리페닐포스핀을 0.50부로, 메틸하이드로퀴논을 0.12부로 각각 변경하고, 로진아크릴레이트를 사용하지 않았던 것 이외에는 합성예 1과 같게 실시해 고형분 산가 95 KOH㎎/g의 알칼리 현상 가능한 비교용 감광성 수지 (Mw: 15000)의 용액을 얻었다.Synthesis example except that 96 parts of propylene glycol monomethyl ether acetate, 70 parts of benzyl methacrylate, 59 parts of vinyltoluene, 0.50 parts of triphenylphosphine, and 0.12 parts of methylhydroquinone were used, and rosin acrylate was not used. It carried out similarly to 1, and obtained the solution of the comparative photosensitive resin (Mw: 15000) which can be alkali-developed with a solid acid value of 95 KOHmg / g.

<비교 합성예 4>Comparative Synthesis Example 4

프로필렌글리콜 모노메틸에테르 아세테이트를 250부로, 벤질메타크릴레이트 76부를 비닐톨루엔 66부로, 메타크릴산을 38부로, 트리페닐포스핀을 0.38부로, 메틸하이드로퀴논을 0.08부로 각각 변경하고, 로진아크릴레이트를 사용하지 않았던 것 이외에는 합성예 3과 같게 실시해 고형분 산가 127 KOH㎎/g의 알칼리 현상 가능한 비교용 감광성 수지 (Mw: 21000)의 용액을 얻었다.250 parts of propylene glycol monomethyl ether acetate, 76 parts of benzyl methacrylate, 66 parts of vinyltoluene, 38 parts of methacrylic acid, 0.38 parts of triphenylphosphine, and 0.08 parts of methylhydroquinone, respectively. Except not having been used, it carried out similarly to the synthesis example 3, and obtained the solution of the comparative photosensitive resin (Mw: 21000) which can be alkali-developed with a solid acid value of 127 KOHmg / g.

<실시예 1~8, 비교예 1~4><Examples 1-8, Comparative Examples 1-4>

합성예 1~8에서 얻어진 감광성 수지의 용액을 각각 실시예 1~8에서 사용하고, 비교 합성예 1~4에서 얻어진 감광성 수지의 용액을 각각 비교예 1~4에서 사용했다. 각 감광성 수지 용액의 고형분 100부에 펜타에리트리톨 테트라아크릴레이트 30부, 광중합 개시제로서 2,2-디메톡시-2-페닐아세토페논 4부를 첨가해 조제한 수지 조성물을 애플리케이터 (applicator)로 유리 기판 상에 습윤시의 두께 10㎛로 도포하고 100℃의 온풍 건조기 중에서 저비점물을 휘발시킨 후, 오크제작소(주)제 초고압 수은등을 이용해 필요에 따라 마스크를 통해 150mJ/㎠로 노광해 두께 2㎛의 경화 도막을 얻고, 다음에 알칼리 현상을 실시했다.The solutions of the photosensitive resin obtained in the synthesis examples 1-8 were used in Examples 1-8, respectively, and the solutions of the photosensitive resin obtained in the comparative synthesis examples 1-4 were used in the comparative examples 1-4, respectively. A resin composition prepared by adding 30 parts of pentaerythritol tetraacrylate and 4 parts of 2,2-dimethoxy-2-phenylacetophenone as a photopolymerization initiator to 100 parts of solid content of each photosensitive resin solution was prepared on an glass substrate with an applicator. After wetting with a thickness of 10 μm when wet and volatilizing the low boiling point in a warm air dryer at 100 ° C., the film is exposed to 150 mJ / cm 2 through a mask, if necessary, using an ultra-high pressure mercury lamp manufactured by Oak Manufacturing Co., Ltd. Was obtained, and then alkali development was carried out.

<내열성><Heat resistance>

각 경화 도막을 잘라 열중량 분석 (TGA)을 실시했다. 자른 시료를 220℃까지 가열해 2시간 유지했을 때의 중량 변화율을 측정했다.Each cured coating film was cut out and thermogravimetric analysis (TGA) was performed. The weight change rate when the cut sample was heated to 220 degreeC and hold | maintained for 2 hours was measured.

<밀착성><Adhesiveness>

경화 도막을 JIS K5400에 준해 기반목 (碁盤目) 시험을 실시해, 100개의 기반목의 박리 상태를 눈으로 봐서 관찰하여 이하의 기준으로 평가했다. The cured coating film was subjected to a base wood test in accordance with JIS K5400, and the peeling state of 100 base woods was visually observed to evaluate the following criteria.

○ : 박리가 전혀 확인되지 않는 것. (Circle): Peeling is not confirmed at all.

△ : 전체의 10% 미만으로 박리가 확인되는 것. (Triangle | delta): Peeling is confirmed by less than 10% of the whole.

× : 전체의 10% 이상으로 박리가 확인되는 것. X: Peeling is confirmed by 10% or more of the whole.

<알칼리 현상성><Alkali Developability>

마스크를 통해 노광한 경화 도막을 23℃에서 0.1%의 탄산나트륨 수용액을 이 용해 스프레이 현상하고, 물 세정 후의 도막의 유무를 관찰했다. 0.1% sodium carbonate aqueous solution was melt-dissolved and developed the cured coating film exposed through the mask at 23 degreeC, and the presence or absence of the coating film after water washing was observed.

○ : 현상 시간 70초 후, 눈으로 봐서 도막이 없음 (Circle): After development time 70 second, there is no coating film visually

× : 현상 시간 70초 후, 눈으로 봐서 도막이 있음×: After the developing time of 70 seconds, there is a coating film by eye

[표 1]TABLE 1

Figure 112008081291700-PCT00003
Figure 112008081291700-PCT00003

[표 2]TABLE 2

Figure 112008081291700-PCT00004
Figure 112008081291700-PCT00004

표 1 및 표 2의 결과로부터 알 수 있는 바와 같이, 실시예 1~8에 있어서는 가열시의 중량 감소가 적고, 또한 경화 도막의 박리가 확인되지 않으며, 게다가 알칼리 현상성을 해칠 일도 없다.As can be seen from the results of Table 1 and Table 2, in Examples 1 to 8, the weight loss during heating is small, the peeling of the cured coating film is not confirmed, and the alkali developability is not impaired.

본 발명의 감광성 수지로부터 형성되는 경화 도막은 특히 반도체 기판에 대한 밀착성이 뛰어나고, 알칼리 현상성을 가지는 것으로부터 레지스트 분야에서의 이용 가치가 매우 높다.The cured coating film formed from the photosensitive resin of this invention is especially excellent in adhesiveness with respect to a semiconductor substrate, and since it has alkali developability, it is very useful in the resist field.

Claims (4)

로진 (메타)아크릴레이트 (a) 5~30몰%, 에폭시기를 가지는 라디칼 중합성 화합물 (b) 30~85몰%, 및 이들과 공중합할 수 있는 (a) 및 (b) 이외의 라디칼 중합성 화합물 (c) 10~65몰%를 그 합계가 100몰%가 되는 양으로 공중합시켜 얻어진 공중합체 중의 에폭시기의 10~100%에 불포화 일염기산 (d)을 반응시킨 후, 수산기의 5~100%에 다염기산 무수물 (e)를 반응시켜 이루어진 감광성 수지.Rosin (meth) acrylate (a) 5-30 mol%, radically polymerizable compound which has an epoxy group (b) 30-85 mol%, and radically polymerizable other than (a) and (b) copolymerizable with these 10 to 65 mol% of the compound (c) is copolymerized in an amount of 100 mol% in total so that the unsaturated monobasic acid (d) is reacted with 10 to 100% of the epoxy group in the copolymer obtained, and then 5 to 100 of the hydroxyl group. Photosensitive resin formed by making polybasic acid anhydride (e) react with%. 로진 (메타)아크릴레이트 (a) 5~30몰%, 불포화 일염기산 (d) 20~60몰%, 및 (a) 및 (d) 이외의 라디칼 중합성 화합물 (c) 10~75몰%를 그 합계가 100몰%가 되는 양으로 공중합시켜 얻어진 공중합체 중의 카르복실기의 5~80%에 에폭시기를 가지는 라디칼 중합성 화합물 (b)을 반응시켜 이루어진 감광성 수지.Rosin (meth) acrylate (a) 5-30 mol%, unsaturated monobasic acid (d) 20-60 mol%, and radically polymerizable compounds (c) 10-75 mol% other than (a) and (d) The photosensitive resin formed by making the radical polymerizable compound (b) which has an epoxy group react with 5 to 80% of the carboxyl groups in the copolymer obtained by copolymerizing in the quantity which totals 100 mol%. 청구항 1 또는 청구항 2에 기재된 감광성 수지와 반응성 희석제 (f)를 필수 성분으로 함유하는 감광성 수지 조성물.The photosensitive resin composition containing the photosensitive resin of Claim 1 or 2 and a reactive diluent (f) as an essential component. 청구항 3에 있어서,The method according to claim 3, 추가로 용매 (g)를 함유하는 감광성 수지 조성물.Furthermore, photosensitive resin composition containing solvent (g).
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