KR20090011916A - Polarizer and organic light emitting display apparatus comprising the same - Google Patents

Abstract

A polarizer and an organic light-emitting display apparatus including the same are provided to enhance largely bright room contrast, visibility, and picture quality by preventing effectively reflection of external light and improving a polarizing characteristic. A polarizer(10) and an organic light-emitting display apparatus including the same includes a base(11), a grid(12), and a low reflectance member(13). The grid is formed on the base. The low reflectance member is formed between the base and the grid. The low reflectance member is composed of a dielectric material.

Description

Polarizer and organic light emitting display apparatus comprising the same

The present invention relates to a polarizer and an organic light emitting display device including the same, and more particularly, to a polarizer for improving bright room contrast and visibility and an organic light emitting display device including the same.

 Recently, display devices have been replaced by portable thin flat display devices. Among the flat panel display devices, the electroluminescent display device is a self-luminous display device, and has attracted attention as a next generation display device because of its advantages of having a wide viewing angle, excellent contrast, and fast response speed. In addition, an organic light emitting display device in which a light emitting layer is formed of an organic material has excellent luminance, driving voltage, and response speed, and may be multicolored, compared to an inorganic light emitting display device.

On the other hand, the flat panel display is portable and can be used outdoors, and is manufactured in a lightweight and thin form to satisfy such an object. At this time, when the image is viewed outdoors, sunlight is reflected, which causes a problem of low contrast and visibility. In particular, in the organic light emitting diode display, the reflection is severe in the metal reflective film, which is a larger problem.

To solve this problem, a circular polarizer is disposed on one surface of the organic light emitting diode display. In addition, the circular polarizer includes a linear polarizer formed of a wire grid by forming a linear pattern with a thin metal. At this time, the grid made of a material containing a metal has a problem of reflecting the light generated from the external light or the flat panel display due to the material, the contrast is lowered and the brightness is lowered.

The present invention can provide a polarizer having improved clear contrast and visibility and an organic light emitting display device including the same.

The present invention discloses a polarizer comprising a base, a grid formed on the base and a low reflectance member between the base and the grid, the low reflectance member comprising a dielectric material.

According to another aspect of the invention discloses a polarizer comprising a base, a grid formed on the base and a low reflectance member on the grid, wherein the low reflectance member comprises a dielectric material.

In the present invention, the low reflectance member may have a form stacked with the grid in the same pattern as the grid.

In the present invention, the low reflectance member may include an organic material.

In the present invention, the low reflectance member may include an inorganic material.

In the present invention, the low reflectance member further comprises a metal, wherein the metal and the dielectric material is a polarizer in a mixture.

According to another aspect of the invention, one surface of the substrate, an organic light emitting element formed on the substrate to implement an image, a sealing member formed on the organic light emitting element, the substrate, the flat panel display element and the sealing member The phase difference layer formed on the substrate and the other one of the surfaces formed by the substrate, the organic light emitting element, the sealing member, and the quarter wave phase difference layer, and the image is formed from the quarter wave phase difference layer. And a linear polarization layer positioned close to the implemented direction, wherein the linear polarization layer includes a low reflectance member laminated with the grid to be located closer to the grid and in a direction in which external light is incident, and the low reflectance member An organic light emitting display device having a dielectric material is disclosed.

In the present invention, the image is implemented in the direction of the substrate and the linear polarizing layer may have a structure in which a grid is formed on the upper surface of the low reflectance member.

In the present invention, the quarter-wave retardation layer may be formed on the linear polarization layer, and the organic light emitting device may be formed on the quarter-wave retardation layer.

In the present invention, the linear polarization layer may be formed on the substrate, the quarter wavelength retardation layer may be formed on the linear polarization layer, and the organic light emitting element may be formed on the quarter wavelength retardation layer.

In the present invention, the quarter-wave retardation layer is formed on the substrate, the organic light emitting element is formed on the quarter-wave retardation layer, and the linear polarization layer is the quarter-wave retardation of both surfaces of the substrate. It can be formed on the side opposite the side on which the layer is formed.

In the present invention, the quarter-wave retardation layer and the linear polarization layer may be sequentially formed on opposite surfaces of both surfaces of the substrate on which the organic light emitting element is formed.

In the present invention, the image is implemented in the direction of the sealing member and the linear polarizing layer may have a structure in which a low reflectance member is formed on the upper surface of the grid.

In the present invention, the quarter-wave retardation layer may be formed on the organic light emitting device, and the linear polarization layer may be formed on the quarter-wave retardation layer.

In the present invention, a protective film may be further included between the organic light emitting element and the quarter-wave retardation layer.

In the present invention, the quarter-wave retardation layer and the linear polarization layer may be sequentially formed on opposite surfaces of the sealing member on which the organic light emitting element is formed.

In the present invention, the quarter-wave retardation layer is formed on a surface of the sealing member facing the organic light emitting element, and the linear polarization layer is formed on a surface of the sealing member on which the quarter-wave retardation layer is formed. It can be formed on the opposite side.

In the present invention, the linear polarizing layer may be formed on the surface of the sealing member facing the organic light emitting device, and the quarter-wave retardation layer may be formed on the surface of the linear polarizing layer facing the organic light emitting device.

In the present invention, further comprising a reflective film interposed between the substrate and the organic light emitting device, wherein the quarter-wave retardation layer is formed between the reflective film and the organic light emitting device, the linear polarizing layer is the organic light emitting device It can be formed on.

The polarizer and the organic light emitting diode display according to the present invention can effectively prevent reflection of external light and improve the polarization characteristics to increase the bright room contrast and visibility, thereby greatly improving the image quality characteristics.

Although described with reference to the embodiment shown in the drawings it is merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

Hereinafter, with reference to the embodiments of the present invention shown in the accompanying drawings will be described in detail the configuration and operation of the present invention.

1 is a schematic perspective view illustrating a polarizer according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

1 and 2, the polarizer 10 includes a base 11, a grid 12, and a low reflectance member 13. The grid 12 and the low reflectance member 13 are formed on the base 11.

The base 11 may be made of a transparent material. This is to allow the light generated in the display device in which the polarizer 10 is to be passed through well. To this end, the base 11 may be made of glass or flexible plastic, but may be formed of a material including plastic for filming.

The grid 12 is formed on the base 11. The grid 12 is a form in which parallel conductor lines are arranged for the purpose of polarizing only specific polarizations in electromagnetic waves. The conductors forming the grid 12 include metals such as aluminum, silver, chromium, nickel, cobalt, molybdenum, and the like. The grid 12 has a period P1 between each grid 12. And this period (P1) is an important factor to determine the performance of the polarizer 10. If the period P1 between the grids 12, that is, the distance between the centers of the grids 12 is longer than the wavelength of the incident light, the polarizer 10 mainly functions as a diffraction grating rather than a polarization function. On the contrary, if the period P1 between the grids 12 is shorter than the light of the incident wavelength, the grids 12 mainly perform polarization functions.

The polarizer 10 of the present invention includes a low reflectance member 13. 1 and 2, the low reflectance member 13 is formed on the grid 12. The thickness T2 of the low reflectance member 13 may be different from the thickness T1 of the grid 12, but is formed in the same pattern such that the period P2 of the low reflectance member 13 is the same as the period P1 of the grid. can do.

The low reflectance member 13 includes a dielectric material. The low reflectance member 13 may use various dielectric materials including organic or inorganic materials. When the low reflectance member 13 is formed of an inorganic material, SiOx (x≥1), SiNx (x≥1), MgF2, CaF2, Al2O3, SnO2, indium tin oxide (ITO), indium zinc oxide (IZO), and ZnO Materials such as, In 2 O 3, Cr 2 O 3, Ag 2 O, TiO 2, Ta 2 O 5, HfO 2, and nitride can be used.

In case of forming the low reflectance member 13 with organic material, Polyethylene (PE), Polypropylene (PP), Polystyrene (PS), Polyethylene terephthalate (PET or PETE), Polyamide (PA), Polyester, Polyvinyl chloride (PVC), Polycarbonate Materials such as (PC), Acrylonitrile butadiene styrene (ABS), Polyvinylidene chloride (PVDC), Polytetrafluoroethylene (PTFE), Polymethyl methacrylate (PMMA), Polylactic acid (PLA) and Polyurethane (PU) can be used. Also, copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl)- Low molecular weight organics such as N, N'-diphenyl-benzidine (NPB) and tris-8-hydroxyquinoline aluminum (Alq3) can also be used.

In addition, the low reflectance member 13 may include a metal, and the metal and the dielectric material may be formed in a mixture. That is, the metal and the dielectric material may be co-deposited to form a mixture to form a low reflectance member having a low reflectance and a high absorption coefficient. Metals are Fe, Co, V, Ti, Al, Ag, Si, Cr, Mo, Ge, Y, Zn, Zr, W, Ta, Cu. It may be a material such as Pt. The dielectric material in admixture with the metal may be an organic, inorganic, compound of organic and inorganic material. Inorganic materials mixed with metals include SiOx (x≥1), SiNx (x≥1), MgF2, CaF2, Al2O3, SnO2, ITO (indium tin oxide), IZO (indium zinc oxide), ZnO, In2O3, Cr2O3, Ag2O , TiO 2, Ta 2 O 5, HfO 2, nitride, and the like.

Organics mixed with metals include Polyethylene (PE), Polypropylene (PP), Polystyrene (PS), Polyethylene terephthalate (PET or PETE), Polyamide (PA), Polyester, Polyvinyl chloride (PVC), Polycarbonate (PC), Acrylonitrile butadiene It may be a polymer material such as styrene (ABS), Polyvinylidene chloride (PVDC), Polytetrafluoroethylene (PTFE), Polymethyl methacrylate (PMMA), Polylactic acid (PLA), Polyurethane (PU) and the like. Also, copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N Low molecular organics such as' -diphenyl-benzidine (NPB) and tris-8-hydroxyquinoline aluminum (Alq3) can also be used. The low reflectance member 13 may be formed by mixing the above-described compounds of the organic and inorganic materials with a metal.

The low reflectance member 13 is formed on the grid 12 to cover the top surface of the grid 12. That is, when the external light is incident on the polarizer 10 of the structure 10 toward the surface where the grid 12 is formed on both sides of the base 11, the low reflectance member 13 reflects the external light on the metal grid 12. ) Prevents. For this effect, the width W2 of the low reflectance member 13 may be equal to the width W1 of the grid 12. Such a structure can be easily obtained by applying a conductor material for forming the grid 12, applying a material for forming the low reflectance member 13 thereon, and patterning the same using a mask.

3 shows a structure of a polarizer 10 according to another embodiment of the present invention. For convenience of explanation, the following description will focus on differences from the above-described embodiment. Compared with the structure of the polarizer 10 shown in FIG. 2, only the position of the low reflectance member 13 is different. The low reflectance member 13 is formed between the base 11 and the grid 12. This is a structure for preventing external light from being reflected at the bottom of the grid 12 when external light is incident on the polarizer 10 when the grid 12 is incident toward the unformed surface of both sides of the base 11. to be.

The polarizer of this invention can be used for flat panel display apparatuses, such as an organic light emitting display device, a liquid crystal display device, a projection device, etc. Hereinafter, an organic light emitting display device including a polarizer of the present invention will be described. In the organic light emitting diode display of the present invention, the base 11 is not required, and the linear polarization layer 22 formed of the grid 12 and the low reflectance member 13 is directly attached to the substrate 20, the sealing member 50, or the like. Form. In the linear polarization layer 22 to be described later, the grid 12 and the low reflectance member 13 are the same except for the base 11 in the polarizer 10 described above, and thus, detailed structures, materials, and formation methods thereof will be omitted. do.

4 is a schematic cross-sectional view of an organic light emitting diode display according to an exemplary embodiment. As shown in FIG. 4, the organic light emitting diode display according to the exemplary embodiment of the present invention may include a substrate 20 made of a transparent material, a linear polarization layer 22 formed on the substrate 20 in order, and The four wavelength retardation layer 21, the organic light emitting element 30, and a sealing member (not shown) are included.

The substrate 20 may be made of a transparent glass material mainly containing SiO ₂ . Although not shown, the upper surface of the transparent substrate 20 may further include a buffer layer (not shown) to block smoothness of the substrate 20 and penetration of impurities, and the buffer layer may be formed of SiO ₂ and / or SiNx. can do. The substrate 20 is not necessarily limited thereto, and may be formed of a transparent plastic material.

The linear polarization layer 22 is formed on the upper surface of the substrate 20. FIG. 5 shows the structure of the linear polarizing layer 22 more clearly in an enlarged view of A of FIG. 4. The low reflectance member 13 is positioned closer to the direction in which external light is incident than the grid 12. In FIG. 4, since the external light is incident on the substrate 20 in the bottom emission type, the low reflectance member 13 is formed on the substrate 20, and the grid 12 is formed on the low reflectance member 13. Materials, structures, and formation methods of the low reflectance member 13 and the lid 12 are omitted as in the above-described embodiment.

The quarter-wave retardation layer 21 is formed on the linear polarization layer 22. The organic light emitting element 30 is formed on the quarter-wave retardation layer 21. In the stacking order of the linear polarization layer 22 and the quarter-wave retardation layer 21, the linear polarization layer 22 is disposed in the incident direction of external light and the quarter-wave retardation layer 21 is disposed therein. Another light transmissive member may be interposed between the linear polarizing layer 22 and the quarter-wave retardation layer 21.

The organic light emitting device 30 includes a first electrode 31, a second electrode 33, and an organic light emitting layer 32 that face each other. The first electrode 31 may be formed of a conductive material of a transparent material, and may be formed of ITO, IZO, In ₂ O ₃ , ZnO, or the like, and may be formed in a predetermined pattern by a photolithography method. In the case of the passive matrix type PM, the pattern of the first electrode 31 may be formed as lines on the stripe spaced apart from each other, and in the case of the active matrix type AM, the pixel may be formed. It may be formed in the form corresponding to the. The second electrode 33 is disposed above the first electrode 31. The second electrode 33 may be a reflective electrode. The second electrode 33 may be formed of aluminum, silver, and / or calcium, and an external terminal (not shown). It can act as a cathode by connecting to. In the case of the passive driving type, the second electrode 33 may have a stripe shape orthogonal to the pattern of the first electrode 31, and in the case of the active driving type, the second electrode 33 may be formed over the entire active area in which the image is implemented. The polarity of the first electrode 31 and the polarity of the second electrode 33 may be opposite to each other.

The organic light emitting layer 32 interposed between the first electrode 31 and the second electrode 33 emits light by electric driving of the first electrode 31 and the second electrode 33. The organic light emitting layer 32 may use a low molecular weight or a high molecular organic material. When the organic light emitting layer 32 is formed of a low molecular weight organic material, a hole transport layer, a hole injection layer, etc. are stacked in the direction of the first electrode 31 around the organic light emitting layers 32 and EML, and in the direction of the second electrode 33. An electron transport layer, an electron injection layer, etc. are laminated | stacked. In addition, various layers may be stacked as needed. Organic materials that can be used are copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (triq-8-hydroxyquinoline aluminum) (Alq3) and the like can be variously applied.

Meanwhile, in the case of the polymer organic layer formed of the polymer organic material, only the hole transport layer (HTL) may be included in the direction of the first electrode 31 with respect to the organic emission layer 32. The polymer hole transport layer may include polyethylene dihydroxythiophene (PEDOT: poly- (2,4) -ethylene-dihydroxy thiophene), polyaniline (PANI), or the like by ink jet printing or spin coating. It is formed on the electrode 31 layer, the polymer organic light emitting layer 32 may be PPV, Soluble PPV's, Cyano-PPV, polyfluorene (Polyfluorene) and the like, inkjet printing, spin coating or thermal transfer method using a laser, etc. The color pattern can be formed by a conventional method of.

In one embodiment of the present invention, the light emitted from the organic light emitting device 30 is emitted in the direction of the substrate 20 as shown in Figure 4 and the user is below the bottom of Figure 4, that is, outside the lower side of the substrate 20 The image can be observed. In such a bottom emission type, external light such as sunlight may be introduced through the substrate 20 to reduce contrast.

However, according to the present invention, the linear polarization layer 22 and the quarter-wave retardation layer 21 form a circular polarization layer to minimize reflection of external light. The external light incident from the lower side of the substrate 20 is absorbed by components in the direction along the absorption axis of the linear polarizing layer 22 and transmits components in the direction along the transmission axis. The component in the direction along this transmission axis is converted into circularly polarized light which is rotated in one direction while passing through the quarter-wave retardation layer 21. Circularly polarized light is reflected by the second electrode 33 of the organic light emitting element 30. When reflected, the circularly polarized light rotating in one direction becomes circularly polarized light rotating in the other direction, and is converted into linearly polarized light in the direction orthogonal to the initial transmission axis while passing through the quarter-wave retardation layer 21. The linearly polarized light is absorbed by the absorption axis of the linear polarization layer 22 so that the linearly polarized light does not come out of the lower side of the substrate 20. Therefore, it is possible to obtain an effect of minimizing external light reflection and further improving contrast.

Furthermore, the linear polarizing layer 22 of the present invention is composed of a grid 12 and a low reflectance member 13 stacked closer to the direction in which external light is incident than the grid 12. Therefore, when the external light incident through the substrate 20 reaches the linear polarization layer 22, the reflection of the external light in the grid 12 of the metallic material may be reduced by the low reflectance member 13, and consequently, the effect of improving the contrast. Can be increased.

In addition, since the linear polarization layer 22 and the quarter-wave retardation layer 21 are directly formed on the substrate 20, an organic light emitting display device having a reduced thickness without the need for an adhesive layer and the like may be implemented. Since it does not pass through this adhesive layer, brightness rises.

The linear polarization layer 22 and the quarter wave retardation layer 21 may be formed in various ways. Such a structure can be modified in consideration of the incident direction of external light not only in the case of the bottom emission type but also in the case of the top emission type.

6 is a cross-sectional view illustrating another example of a bottom emission organic light emitting display device according to an exemplary embodiment of the present invention. The linear polarization layer 22 is formed on one surface of the both surfaces of the substrate 20 facing outward, and the quarter wave retardation layer 21 is formed on the other surface. The organic light emitting element 30 is formed on the quarter-wave retardation layer 21. The detailed structure of the linear polarizing layer 22 is shown in FIG. 7, which is an enlarged view of FIG. 6. It is a structure in which a low reflectance member is formed at a lower part of the drawing in the direction of incidence of external light and a grid is formed thereon. Description of each component is omitted as described above. Also in this embodiment, the external light incident from the outside of the substrate 20 passes through the linear polarization layer 22 and becomes linearly polarized light parallel to the transmission axis, and passes through the quarter wavelength retardation layer 21 through the substrate 20. While rotating in one direction, it becomes circularly polarized light, and after reflecting from the second electrode 33 layer, it becomes circularly polarized light in the other direction. The other direction rotation circularly polarized light becomes linearly polarized light orthogonal to the transmission axis while passing again through the 1/4 wavelength retardation layer 21, and this linearly polarized light does not pass through the linear polarization layer 22, and thus is lower than the substrate 20. Since the reflected external light cannot be seen from the outside, there is a contrast enhancement effect due to the reduction of the external light.

Furthermore, as described above, the linear polarization layer 22 includes a low reflectance member 13 to prevent external light incident to the lower portion of the substrate 20 from reflecting off the grid 12.

8 is a cross-sectional view illustrating still another example of a bottom emission type organic light emitting diode display according to an exemplary embodiment. A quarter wave retardation layer 21 and a linear polarization layer 22 are sequentially formed on one surface of both surfaces of the substrate, and the organic light emitting device 30 is formed on the other surface of the substrate. Detailed description of each component is as described above.

The detailed structure of the linear polarizing layer 22 is shown in FIG. 9, which is an enlarged view of FIG. 8C. The grid 12 is formed on the lower surface of the quarter-wave retardation layer 21, and the low reflectance member 13 is formed on the lower surface of the grid 12.

Also in this embodiment, as described above, the low reflectance member 13 minimizes the reflection of external light incident from the lower portion of the substrate 20 on the grid 12, thereby increasing the contrast enhancement effect.

 The above description is an example of a bottom emission type organic light emitting device in which an image is embodied in the direction of the substrate 20, but the present invention is not necessarily limited thereto, and the present invention is not limited to the direction of the substrate 20. In addition, the same may be applied to the top emission structure implemented toward the opposite direction of the substrate 20.

FIG. 10 is a cross-sectional view illustrating an example of a top-emitting organic light emitting diode display according to another exemplary embodiment. The organic light emitting diode display includes a substrate 20, a reflective film 34 on the substrate 20, and an organic light emitting diode. 30, the sealing member 50 is included.

As described above, the transparent glass substrate 20 may be used as the substrate 20, but it is not necessary to be transparent. In addition, plastic or metal may be used to have flexible properties. At this time, an insulating film is further formed on the metal surface.

The reflective film 34 formed on one surface of the substrate 20 may be formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like. The first electrode 31 may be formed on the reflective film 34 of ITO, IZO, ZnO, In ₂ O ₃ , or the like having a high work function. The first electrode 31 functions as an anode, and if the first electrode 31 functions as a cathode, the first electrode 31 is formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir. , Cr, and a compound thereof can also be used as the reflective film 34. Hereinafter, an example in which the first electrode 31 functions as an anode will be described.

The second electrode 33 is formed of a transmissive electrode. It can be formed thin so as to be a semi-permeable film made of metal such as Li, Ca, LiF / Al, Al, Mg, Ag, etc., which have a small work function. Of course, by forming a transparent conductor such as ITO, IZO, ZnO, or In ₂ O ₃ on the metal semi-transmissive layer, it is possible to solve the problem of high resistance as the thickness becomes thin.

The organic light emitting layer 32 formed between the first electrode 31 and the second electrode 33 is the same as described above.

The sealing member 50 which seals the organic light emitting element 30 is formed on the organic light emitting element 30. The sealing member 50 is formed to protect the organic light emitting device 30 from external moisture, oxygen, or the like, and the sealing member 50 is made of a transparent material. To this end, the glass substrate 20, the plastic substrate 20, or a plurality of overlapping structures of organic and inorganic materials may be used.

The 1/4 wavelength retardation layer 21 and the linear polarization layer 22 are sequentially formed on the upper surface of the sealing member 50, that is, the surface facing away from the organic light emitting element 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 11, which is an enlarged view of FIG. The grid 12 is formed on the sealing member 50, and the low reflectance member 13 is formed on the grid 12. The structure of the grid and the low reflectance member in FIG. 11 is also the same as the structure in FIG. 1, and the detailed description is omitted.

According to the present embodiment, the external light incident from the direction in which the image is implemented, that is, the external light incident from the upper portion in FIG. 10 passes through the linear polarization layer 22 and the quarter-wave retardation layer 21 in order, and then reflects the film 34. When it is reflected off the surface, it cannot finally pass through the linear polarization layer 22. The principle is as described above.

In addition, as shown in FIG. 11, the low reflectance member 13 is formed on the grid 12 so that the low reflectance member 13 prevents reflection of the external light from the grid 12 when external light is incident in the upper direction of the drawing. Increase the improvement effect.

12 is a cross-sectional view illustrating still another example of a top-emitting organic light emitting diode display according to another exemplary embodiment of the present invention. The linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially formed on one surface of the sealing member 50 facing the organic light emitting element 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 13, which is an enlarged view of E in FIG. 12. The low reflectance member 13 is formed on the lower surface of the sealing member 50, and the grid 12 is formed on the lower surface of the low reflectance member 13. Detailed structures and effects will be omitted as described above.

14 is a cross-sectional view illustrating still another example of a top-emitting organic light emitting diode display according to another exemplary embodiment of the present invention. The linear polarization layer 22 is formed on one surface of both surfaces of the sealing member 50 facing outwards, and the quarter-wave retardation layer 21 is formed on the other surface facing the organic light emitting device 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 15, which is an enlarged view of F of FIG. 14. The grid 12 is formed on the upper surface of the sealing member, and the low reflectance member 13 is formed on the grid 12. Detailed structures and effects will be omitted as described above.

16 is a cross-sectional view illustrating still another example of a top-emission organic light emitting diode display according to another exemplary embodiment of the present invention. The reflective film 34 is formed on the substrate 20, the organic light emitting device 30 is formed on the reflective film 34, and the quarter-wave retardation layer 21 is formed on the organic light emitting device 30. The linear polarization layer 22 is formed on the quarter wavelength retardation layer 21. The structure of the linear polarizing layer 22 is shown in detail in FIG. 17, which is an enlarged view of G in FIG. 16. The grid 12 is formed on the quarter-wave retardation layer 21, and the low reflectance member 13 is formed on the grid 12. In this case, the protective layer 40 may be formed between the second electrode 33 layer and the quarter-wave retardation layer 21. The protective layer 40 is to prevent the second electrode 33 layer from being damaged during the process when the quarter-wave retardation layer 21 is formed.

The protective layer 40 is formed of an inorganic material or an organic material. As the inorganic material, metal oxide, metal nitride, metal carbide, metal oxynitride, and compounds thereof may be used. As the metal oxide, silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, and compounds thereof may be used. Aluminum nitride, silicon nitride, and compounds thereof may be used as the metal nitride. Silicon carbide may be used as the metal carbide, and silicon oxynitride may be used as the metal oxynitride. In addition to the inorganic material, silicon may be used, and ceramic derivatives of silicon and metal may be used. In addition, diamond-like carbon (DLC) may be used.

Organic materials may include organic polymers, inorganic polymers, organometallic polymers, and hybrid organic / inorganic polymers. Can be used.

18 illustrates another example of a top emission organic light emitting diode device according to another embodiment of the present invention. The example in which the quarter-wave retardation layer 21 and the linear polarization layer 22 are formed between the reflective film 34 and the organic light emitting element 30 is shown. The structure of the linear polarizing layer 22 is shown in detail in FIG. 19, which is an enlarged view of FIG. The grid 12 is formed on the quarter wavelength retardation layer 21, and the low reflectance member 13 is formed on the grid 12. Even in this case, the external light incident from the upper direction of the drawing becomes linearly polarized light parallel to the transmission axis while passing through the linear polarization layer 22, and one-way rotating circularly polarized light passes through the 1/4 wavelength retardation layer 21 layer. After being reflected by the reflective film 34, the circularly polarized light is rotated in the other direction. The other direction rotation circularly polarized light becomes linearly polarized light orthogonal to the transmission axis while passing the 1/4 wavelength retardation layer 21 again, and the linearly polarized light cannot pass through the linearly polarized layer 22, and the externally reflected light is reflected from the outside. You won't see it.

In addition, it is possible to minimize the reflection of external light from the grid 12 due to the low reflectance member 13.

Although not shown, the quarter wavelength retardation layer 21 is formed on the upper surface of the reflective film 34, and the organic light emitting element 30 is formed on the quarter wavelength retardation layer 21. The linear polarizing layer 22 may be formed in the above.

20 is a schematic cross-sectional view illustrating an example of a passive emission type bottom emission type organic light emitting diode display according to another exemplary embodiment of the present invention.

In the organic light emitting diode display of FIG. 20, similar to FIG. 5, the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially formed on the upper surface of the substrate 20. The organic light emitting element 30 is formed on the 21. The detailed structure of the linear polarizing layer 22 is the same as that of FIGS. 4 and 5 and will be omitted.

The first electrode 31 is formed in a predetermined stripe pattern on the quarter-wave retardation layer 21, and the internal insulating film 35 is formed on the first electrode 31 so as to partition it. On the internal insulating film 35, a separator 36 formed to be orthogonal to the first electrode 31 is formed for patterning the organic light emitting layer 32 and the second electrode 33. By this separator 36, the organic light emitting layer 32 and the second electrode 33 are patterned to intersect the first electrode 31. A sealing member (not shown) is disposed on the second electrode 33 to block the organic light emitting element 30 from the outside air. In some cases, the organic light emitting layer 32 and the second electrode 33 may be patterned without the separator 36.

In the case of the embodiment according to FIG. 20, as in the above-described embodiment of FIG. 4, external light flowing from the lower portion of the substrate 20 may not be reflected, so that contrast may be improved and the overall display thickness may be reduced.

In addition, the low reflectance member 13 increases the contrast enhancement effect by minimizing the reflection of external light in the grid 12.

Although not illustrated in a separate drawing, the structure shown in FIGS. 6 and 8 may be applied to the passively driven display device as it is.

FIG. 21 is a schematic cross-sectional view illustrating an example of a bottom emission type organic light emitting diode display according to another embodiment of the present invention.

Referring to FIG. 21, a thin film transistor TFT is formed on an upper surface of the substrate 20. At least one thin film transistor TFT is formed for each pixel, and is electrically connected to the organic light emitting element 30.

Specifically, the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially formed on the substrate 20. The detailed structure of the linear polarizing layer 22 is omitted as shown in FIG. The buffer layer 41 is formed on the 1/4 wavelength retardation layer 21, and the semiconductor layer 42 of a predetermined pattern is formed on the buffer layer 41. A gate insulating film 43 formed of SiO 2, SiN x, or the like is formed on the semiconductor layer 42, and a gate electrode 44 is formed in a predetermined region on the gate insulating film 43. The gate electrode 44 is connected to a gate line (not shown) for applying a TFT on / off signal. An interlayer insulating layer 45 is formed on the gate electrode 44, and the source electrode 46 and the drain electrode 47 are formed to contact the source and drain regions of the semiconductor layer 42 through contact holes, respectively. . The TFT thus formed is covered with the passivation film 48 and protected.

A first electrode 31 serving as an anode electrode is formed on the passivation layer 48, and a pixel define layer 49 is formed of an insulator to cover the passivation layer 48. After the predetermined opening is formed in the pixel defining layer 49, the organic light emitting layer 32 is formed in the region defined by the opening. The second electrode 33 is formed to cover all the pixels.

Also in the active drive type structure, since the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially stacked on the substrate 20, from the lower direction of the substrate 20 as shown in FIG. The linear polarization layer 22 and the quarter-wave retardation layer 21 can block the reflection of the introduced external light.

In addition, the linear polarizing layer 22 includes a grid 12 and a low reflectance member 13, and the low reflectance member 13 minimizes reflection of external light in the grid 12 to increase the contrast enhancement effect.

In the AM driving type bottom emission type organic light emitting display device, the linear polarization layer 22 and the quarter-wave retardation layer 21 are arranged in a direction in which the linear polarization layer 22 is directed toward external light. As long as the four-wavelength retardation layer 21 is disposed in the direction toward the organic light emitting element 30, it may be formed on any surface formed by the substrate 20, the thin film transistor TFT and the organic light emitting element 30. That is, although not shown in a separate drawing, as shown in FIGS. 7 and 9, after forming the 1/4 wavelength retardation layer 21 and the linear polarization layer 22 on one surface and / or the other surface of the substrate 20, The thin film transistor TFT and the organic light emitting element 30 may be formed thereon, and the quarter-wave retardation layer 21 and / or the linear polarization layer 22 may be formed as each layer of the thin film transistor TFT. It can also arrange | position between the interfaces which become.

Thus, although not shown, a separate passivation film 38 is not formed of an organic material and / or an inorganic material over the TFT, and the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially interlayer insulating film 45. It may be formed on the surface to replace the passivation film 48.

FIG. 22 is a schematic cross-sectional view illustrating an example of a passive light-emitting organic light emitting display device according to another exemplary embodiment of the present invention.

The reflective film 34 is formed on the upper surface of the substrate 20, and the 1/4 wavelength retardation layer and the linear polarizing layer 22 are sequentially formed on the upper surface of the reflective film 34. The organic light emitting element 30 is formed.

The detailed structure of the linear polarizing layer 22 is the same as that of FIGS. 18 and 19, and a detailed description thereof will be omitted. The first electrode 31 is formed in a predetermined stripe pattern on the linear polarizing layer 22, and the internal insulating layer 35 is formed on the first electrode 31 to partition it. On the internal insulating film 35, a separator 36 formed to be orthogonal to the first electrode 31 is formed for patterning the organic light emitting layer 32 and the second electrode 33. By the separator 36, the organic light emitting layer 32 and the second electrode 33 are patterned to intersect the first electrode 31. A sealing member (not shown) is formed on the second electrode 33 to block the organic light emitting element 30 from the outside air. In some cases, the organic emission layer 32 and the second electrode 33 may be patterned without the separator 36.

Even in this embodiment, the external light flowing from the outside is not reflected, so that the contrast can be improved and the overall display thickness can be reduced. In addition, due to the low reflectance member, the reflection of external light in the grid is minimized to increase the contrast raising effect.

Although not illustrated in a separate drawing, the structure shown in FIGS. 10, 12, 14, 16, and 18 may also be applied to the front emission type passive display device.

FIG. 23 is a schematic cross-sectional view illustrating an example of an active driving type top emission type organic light emitting diode display according to another exemplary embodiment.

Referring to FIG. 23, a thin film transistor TFT is formed on an upper surface of the substrate 20. At least one thin film transistor TFT is formed for each pixel, and is electrically connected to the organic light emitting element 30. Since the structure of the thin film transistor TFT is the same as in FIG. 21 described above, a detailed description thereof will be omitted.

The passivation film 48 is formed on the thin film transistor so as to cover the thin film transistor TFT, and the reflective film 34 is formed on the passivation film 48. The first electrode 31 serving as the anode electrode is formed on the reflective film 34, and the pixel defining layer 49 is formed of an insulator to cover the first electrode 31. After the predetermined opening is formed in the pixel defining layer 49, the organic light emitting layer 32 is formed in the region defined by the opening. The second electrode 33 is formed to cover all the pixels.

In the embodiment of FIG. 23, as in the embodiment of FIG. 12, the linear polarizing layer 22 and the quarter-wave retardation layer are sequentially formed on one surface of the sealing member 50 facing the organic light emitting element 30. 21 is formed. The detailed structure of the linear polarizing layer 22 is omitted as shown in FIG.

 As shown in FIG. 23, the linear polarization layer 22 and the quarter-wave retardation layer 21 can block reflection of external light incident from the upper side of the sealing member 50 in the upper direction of the drawing. In addition, due to the low reflectance member 13, the reflection of external light in the grid 12 is minimized to increase the contrast raising effect.

Although not illustrated in a separate drawing, the structure shown in FIGS. 10, 12, 14, 16, and 18 may also be applied to the top emission type active display device.

The present invention as described above is not limited to the organic light emitting display device, and can be applied to any other flat panel display device using an inorganic light emitting device, an LCD, an electron emitting device, or the like as the light emitting device.

1 is a schematic perspective view showing a polarizer according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

3 is a schematic cross-sectional view showing a polarizer according to another embodiment of the present invention.

4 to 9 are schematic cross-sectional views illustrating examples of a bottom emission organic light emitting display device and an enlarged linear polarization layer according to an embodiment of the present invention.

10 to 19 are schematic cross-sectional views illustrating examples of a top emission organic light emitting display device and an enlarged linear polarization layer according to another embodiment of the present invention.

20 is a schematic cross-sectional view illustrating an example of a passive emission type bottom emission type organic light emitting diode display according to another exemplary embodiment of the present invention.

FIG. 21 is a schematic cross-sectional view illustrating an example of a bottom emission type organic light emitting diode display according to another embodiment of the present invention.

FIG. 22 is a schematic cross-sectional view illustrating an example of a passive light-emitting organic light emitting display device according to another exemplary embodiment of the present invention.

FIG. 23 is a schematic cross-sectional view illustrating an example of an active driving type top emission type organic light emitting diode display according to another exemplary embodiment.

<Brief description of symbols for the main parts of the drawings>

10: polarizer 11: base

12: grid 13: low reflectance absence

20: substrate 21: 1/4 wavelength retardation layer

22: linear polarization layer 30: organic light emitting device

31: first electrode 32: organic light emitting layer

33: second electrode 34: reflective film

35: internal insulating film 36: separator

40: protective film 41: buffer layer

42: semiconductor layer 43: gate insulating film

44 gate electrode 45 interlayer insulating film

46: source electrode 47: drain electrode

48: passivation film 49: pixel defining film

50: sealing member

Claims (23)

Base; A grid formed on the base and And a low reflectance member between the base and the grid, wherein the low reflectance member comprises a dielectric material. Base; A grid formed on the base and A low reflectance member on said grid, said low reflectance member having a dielectric material. The method according to claim 1 or 2, The low reflectance member is a polarizer in the form of being stacked with the grid in the same pattern as the grid. The method according to claim 1 or 2, The low reflectance member is a polarizer comprising an organic material. The method according to claim 1 or 2, The low reflectance member is a polarizer comprising an inorganic material. According to claim 1, The low reflectance member further comprises a metal, wherein the metal and the dielectric material are a polarizer in a mixture. Board; An organic light emitting element formed on the substrate to implement an image; A sealing member formed on the organic light emitting element; A quarter-wave retardation layer formed on one of the surfaces formed by the substrate, the organic light emitting element, and the sealing member; A linear polarization layer formed on the other side of the surfaces formed by the substrate, the organic light emitting element, the sealing member, and the quarter-wave retardation layer, and positioned closer to the direction in which the image is realized than the quarter-wave retardation layer. Including, The linear polarization layer includes a low reflectance member stacked with the grid to be positioned closer to the grid and in a direction in which external light is incident, and the low reflectance member includes a dielectric material. The method of claim 7, wherein The image is embodied in the direction of the substrate, The linear polarizing layer has a structure in which the grid is formed on an upper surface of the low reflectance member. The method of claim 8, And the quarter-wave retardation layer is formed on the linear polarization layer, and the organic light emitting element is formed on the quarter-wave retardation layer. The method of claim 8, And the linear polarization layer is formed on the substrate, the quarter wavelength retardation layer is formed on the linear polarization layer, and the organic light emitting element is formed on the quarter wavelength retardation layer. The method of claim 8, The quarter-wave retardation layer is formed on the substrate, the organic light emitting element is formed on the quarter-wave retardation layer, and the linear polarization layer has the quarter-wave retardation layer formed on both sides of the substrate. An organic light emitting display device formed on an opposite side of a surface. The method of claim 8, And the quarter-wave retardation layer and the linear polarization layer are sequentially formed on opposite surfaces of both surfaces of the substrate on which the organic light emitting element is formed. The method of claim 7, wherein The image is embodied in the direction of the sealing member, The linear polarizing layer has a structure in which the low reflectance member is formed on an upper surface of the grid. The method of claim 13, And the quarter-wave retardation layer is formed on the organic light emitting element, and the linear polarization layer is formed on the quarter-wave retardation layer. The method of claim 14, And a passivation layer between the organic light emitting element and the quarter-wave retardation layer. The method of claim 13, And the quarter-wave retardation layer and the linear polarization layer are sequentially formed on opposite surfaces of the sealing member on which the organic light emitting element is formed. The method of claim 13, The quarter-wave retardation layer is formed on a surface of the sealing member facing the organic light emitting element, and the linear polarization layer is formed on the opposite side of the surface on which the quarter-wave retardation layer is formed among the two surfaces of the sealing member. OLED display. The method of claim 13, And the linear polarization layer is formed on the surface of the sealing member facing the organic light emitting element, and the quarter-wave retardation layer is formed on the surface of the linear polarization layer facing the organic light emitting element. The method of claim 13, And a reflective film interposed between the substrate and the organic light emitting device, wherein the quarter-wave retardation layer is formed between the reflective film and the organic light emitting device, and the linear polarizing layer is formed on the organic light emitting device. OLED display. The method of claim 7, wherein And the low reflectance member is stacked on the grid in the same pattern as the grid. The method of claim 7, wherein The low reflectance member includes an organic material. The method of claim 7, wherein The low reflectance member includes an inorganic material. The method of claim 7, wherein The low reflectance member further includes a metal, wherein the metal is mixed with the dielectric material.

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