KR20090011284A - Manufacting method of semiconductor device - Google Patents

Abstract

A manufacturing method of semiconductor device is provided to improve manufacturing efficiency of a semiconductor device by filling an oxide film inside a trench without a void. A trench(140) and a space pattern(120) are formed on a semiconductor substrate(110). A first gap fill oxide layer is formed by coating oxide material on the semiconductor substrate. A part of the oxide layer formed on the space pattern is etched. A protective film(170) is formed on the semiconductor substrate. An oxide layer remaining on the space pattern is removed by etching. A second gap fill oxide layer(150) is formed inside the trench by coating oxide material on the semiconductor substrate.

Description

Manufacturing method of semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for forming a device isolation film of a semiconductor device.

In general, in the process of forming an active element such as a transistor and a passive element such as a capacitor on a semiconductor substrate, the active region electrically conductive to the semiconductor substrate, and each element formed on the substrate to prevent electrical conduction A device isolation region for separating is formed.

In the process of forming the device isolation region, a trench having a predetermined depth is formed in the semiconductor substrate, a gap fill oxide layer is deposited in the trench, and then a chemical polishing process is performed. Unnecessary portions of the gapfill oxide layer are removed.

Through such a process, a shallow trench isolation (STI) is formed on the semiconductor substrate.

However, in recent years, due to the high integration and ultra-fineness of semiconductor devices, the aspect ratio of trenches for forming device isolation layers is increased. That is, since the longitudinal length of the wrench becomes larger than the horizontal length, there is a problem that the oxide layer is not completely embedded in the trench when the gapfill oxide layer is embedded in the trench.

1 and 2 are cross-sectional views illustrating a method of forming a device isolation film according to the prior art.

1 and 2, an oxide film and a nitride film are sequentially stacked on the semiconductor substrate 10, and then a photolithography process using a photosensitive film is performed to form a pad pattern (not shown). By using the pad pattern as a mask, the semiconductor substrate 10 is etched to form the space pattern 20 and the trench 40 defining the device isolation region in the semiconductor substrate 10.

Thereafter, an oxide film 30 is formed on the semiconductor substrate 10 to protect the semiconductor substrate 10 exposed by the formation of the space pattern 20 and the trench 40.

Subsequently, as illustrated in FIG. 2, an oxidizing material is coated on the entire surface of the semiconductor substrate 10, and the gap fill oxide layer 50 is embedded in the trench 40 to form an isolation layer STI.

However, since the gap fill oxide layer 50 is also applied to the space pattern 20 during the process of filling the gap fill oxide layer 50 in the trench 40, the voids (not shown) in the upper edge portion 22 of the space pattern 20 are formed. 60 is formed to prevent the gapfill oxide layer 50 from being completely embedded in the trench 40.

This is because, as described above, the aspect ratio of the trench 40 for forming the device isolation layer becomes larger than 4: 1 (the length of the trench becomes four times larger than the horizontal length). Before the gap fill oxide layer 50 is completely embedded in the trench 40, a void 60 formed in the upper edge portion 22 of the space pattern 20 blocks the opening of the trench 40. This is because the gap fill oxide layer 50 is prevented from being applied inside the trench 40.

Since the gapfill oxide layer is also coated on the space pattern during the process of filling the gapfill oxide layer in the trench, voids are formed in the upper edge portion of the space pattern, thereby preventing the gapfill oxide layer from being completely embedded in the trench.

In order to solve the above problems, the present invention is to provide a method of manufacturing a semiconductor device capable of smoothly forming a gap fill oxide layer in the trench in the process of forming a device isolation film.

The semiconductor device manufacturing method according to an embodiment of the present invention for achieving the above object is applied to the entire surface of the semiconductor substrate formed with the trench and the space pattern defining the device isolation region to a predetermined height inside the trench. A first step of forming a first gap fill oxide layer, a second step of etching a portion of the oxide layer formed on the space pattern, a third step of forming a protective film on the semiconductor substrate on which the oxide layer is etched, and the space pattern And a fourth step of additionally etching the remaining oxide layer on the semiconductor layer, and a fifth step of forming a second gapfill oxide layer in the trench by applying an oxidizing material to the entire surface of the semiconductor substrate.

In the method of manufacturing a semiconductor device according to an embodiment of the present invention, the trench is characterized in that the longitudinal length has a value four times or more than the horizontal length.

In the method of manufacturing a semiconductor device according to an embodiment of the present invention, the oxidizing material of the first step is characterized in that the material of at least one of 0 ₃ or TEOS (Tetra Ethyl Ortho Silicate) or USG (Undoped Silcate Glass).

In the method of manufacturing a semiconductor device according to an embodiment of the present invention, the first gap fill oxide layer of the first step is formed to have a height of ¼ to ½ in the trench.

In the method of manufacturing a semiconductor device according to an embodiment of the present invention, the second step of etching a portion of the oxide layer is a mixture of hydrofluoric acid (HF) and ammonium fluoride (NH ₄ F) in a ratio of 6: 25 to 1: 30. One etchant (HF: NHF ₄ = 1 to 6: 25 to 30) is sprayed for 20 [sec] to 30 [sec] at a capacity of 20 to 40 [ml / min].

A method of manufacturing a semiconductor device according to an embodiment of the present invention is characterized by etching the oxide layer formed on the space pattern to have a thickness of 50 kPa to 100 kPa.

In the method of manufacturing a semiconductor device according to an embodiment of the present invention, after the second step, further comprising the step of drying the semiconductor substrate by injecting N ₂ gas to the semiconductor substrate.

In the method of manufacturing a semiconductor device according to an embodiment of the present invention, the third step of forming the protective film is a mixture of NH ₄ OH, H ₂ O ₂ , DIH ₂ O in the ratio of 1: 2 ~ 4: 20 ~ 400. The solution is sprayed at a capacity of 20 to 40 [ml / min] for 10 [min] to 20 [min] to remove impurities and particles on the semiconductor substrate and to form the protective film.

In a method of manufacturing a semiconductor device according to an embodiment of the present invention, the fourth step of additionally etching the oxide layer is 20 ~ 20 to a solution obtained by mixing ultrapure Deionized Water (DI water) and HF in a ratio of 100: 1 to 800: 1 10 [sec] to 30 [sec] at a capacity of 40 [ml / min] to further remove impurities and oxide layers remaining on the semiconductor substrate.

In a method of manufacturing a semiconductor device according to an embodiment of the present invention, the fifth step of forming the second gap fill oxide layer in the trench may be performed by coating one or more materials of 0 ₃ or TEOS or USG on the entire surface of the semiconductor substrate. The second oxide layer is formed in the remaining trench internal space after the first oxide layer is embedded.

A method of manufacturing a semiconductor device according to an embodiment of the present invention may further include, after the fifth step, removing the oxide layers accumulated in portions except the trench region by using a wet or dry etching method. .

In the method of manufacturing a semiconductor device according to an embodiment of the present invention, in the structure in which the longitudinal length of the trench has a value of four times or more than the width of the trench, an oxide film is embedded in the trench without voids to improve the manufacturing efficiency of the semiconductor device. Can be.

Hereinafter, the technical objects and features of the present invention will be apparent from the description of the accompanying drawings and the embodiments. Looking at the present invention in detail.

3 to 5 are cross-sectional views illustrating a method of forming an isolation layer in accordance with an embodiment of the present invention.

3 to 5, an oxide film and a nitride film (not shown) are sequentially stacked on the semiconductor substrate 110, and then a photolithography process using a photosensitive film is performed to form a pad pattern (not shown).

As shown in FIG. 3, the semiconductor substrate 110 is etched using the pad pattern formed as a mask, and the trench 140 having a predetermined depth and a space pattern 120 defining an isolation region of the semiconductor substrate 110 is formed. ). Here, the semiconductor substrate 110 uses a silicon (Si) substrate.

Thereafter, an oxide film 130 is formed on the semiconductor substrate 110 in order to protect the semiconductor substrate 110 which may be exposed by an ongoing manufacturing process.

Here, the aspect ratio (a: b) of the trench 140, which defines the device isolation region, has a value of 4: 1 or more (the length of the trench becomes larger than the width thereof). That is, when the ratio of the transverse length of the trench 140 is 1, it means that the ratio of the longitudinal length becomes 4 or more. The ratio of the length of the trench 140 to the ratio of the length of the trench 140 is larger than that of the width of the trench 140. As a result of the recent high integration and ultra-fineness of semiconductor devices, a large number of devices are formed in the semiconductor substrate 110 having the same area. To do this.

The increase in the aspect ratio of the trench 140 causes voids in the upper edge portion 122 of the space pattern 120 when a gap fill oxide layer is embedded in the trench 140. This may cause the trench 140 not to be completely embedded in the trench 140.

A method of manufacturing a semiconductor device according to an embodiment of the present invention aims to improve this problem.

Thereafter, as illustrated in FIG. 4, an oxidizing material is applied to the entire surface of the semiconductor substrate 110 to fill the first gap fill oxide layer 150a to a predetermined height (¼ to ½ height inside the trench). . Here, when the first gap fill oxide layer 150a is buried in the trench 140 at once, the same problem may occur as in the related art. As illustrated in FIGS. 4 and 5, the DWD ( Deposition Wet Etch Deposition) is performed to fill the trench 140 with two gap fill oxide layers 150.

In more detail, the material of the first gapfill oxide layer 150a buried in the trench 140 may be formed of at least one of 0 _3, TEOS (Tetra Ethyl Ortho Silicate), or USG (Undoped Silcate Glass). And a material of one of these 0 ₃ or TEOS or USG is buried to a height of ¼ to ½ inside the trench 140 to form the first gapfill oxide layer 150a.

Subsequently, when the first gap fill oxide layer 150a is buried in the trench 140, the oxide layer 150a stacked on the space pattern 120 is etched (removed) using a wet etching method.

Here, the wet etching method will be described in more detail. After the first gap fill oxide layer 150a is first formed in the trench 140 to a predetermined height, the wet pattern of the spacer layer 120 may be performed by performing wet etching in two steps. The oxide layer 150a stacked on the substrate is etched (removed).

First, BHF etching with a high etching rate is performed first, and then an oxide layer 150a stacked on the space pattern 120 is subjected to DHF etching, which is relatively slower than BHF etching but can be precisely etched. ) Remove precisely.

The BHF etching method is a wet visual method using a BHF (Buffered HF) solution, which is a mixed solution of hydrofluoric acid (HF) and ammonium fluoride (NH ₄ F), to be primarily performed under the following conditions.

NHF ₄ and HF in proportion to [30: 6] (the preferred ratio is [NHF ₄ : HF = 25 ~ 30: 1 ~ 6]) Spray the mixed etchant for 20 [sec] ~ 30 [sec] with 20 ~ 40 [mL / min] capacity. Thereafter, N ₂ gas is sprayed to dry.

The BHF etching process is performed such that the thickness of the oxide layer 150a stacked on the space pattern 120 is 50 kPa to 100 kPa from the semiconductor substrate 110. That is, BHF etching is performed such that the oxide layer 150a stacked on the space pattern 120 has a thickness of 50 kPa to 100 kPa.

In the preceding description, the conditions for the BHF etching process are NHF ₄ and HF in the ratio [30: 6] (the preferred ratio is [NHF _4]. : HF = 25 to 30: 1 to 6]) The mixed etchant was sprayed for 20 [sec] to 30 [sec] at a capacity of 20 to 40 [ml / min], but this was performed by the oxide layer 150a. In the case of having a thickness, the conditions are disclosed. In the case where the oxide layer 150a is thinner or thicker, etching conditions such as the capacity and injection time of the BHF etching solution may vary.

Subsequently, an SC-1 cleaning process is performed on the semiconductor substrate 110 subjected to the BHF etching process to remove impurities, thereby forming a protective film 170.

In the SC-1 cleaning process, the BHF etching process described above is performed using a solution in which NH ₄ OH + H ₂ O ₂ + DI Water is mixed, and the impurities and particles of the oxide layer 150a remain on the semiconductor substrate 110. (Paticle) is removed, and a protective film 170 is formed on the semiconductor substrate 110.

Here, the passivation layer 170 is to reduce the amount of the oxide film accumulated on the upper side of the space pattern 120 in the process of forming the second oxide layer 150b to be performed later, the SiN formed on the upper side of the space pattern 120 Since the deposition rate is higher than that of the oxide layer formed in the trench 140, the trench 140 is formed to match the deposition rates of the two portions. In addition, the protective layer 170 serves to protect the semiconductor substrate 110 in a subsequent process.

If the protective layer 170 is not present, a large amount of oxide is deposited on the upper edge portion 122 of the space pattern 120, so that the gap fill oxide layer 150 is not completely embedded in the trench 140 as in the related art. Can be generated.

SC-1 washing | cleaning process and the protective film 170 formation process are performed on condition of the following.

_{NH 4 OH, H 2 O 2} , DIH 2 O is 1: 2 ~ 4: NH (the solution was mixed with _{20 ~ 400 4 OH: H 2} O 2 : DIH ₂ O = 1: 2 to 4: 20 to 400]) is sprayed for 10 [min] to 20 [min] at a capacity of 20 to 40 [ml / min] to form a protective film 170.

Even if the aspect ratio of the trench 140 becomes 2 to 3: 1 or 4: 1 or more (even if the ratio of the length of the trench length increases to the ratio of the width of the width) by the passivation layer 170, as shown in FIG. 5, the trench The gap fill oxide layer 150 may be completely buried without voids therein.

After performing the BHF etching step and the SC-1 cleaning step, the DHF etching step is performed to remove the oxide film remaining on the space pattern 120.

Diluted HF (DHF) etching process is a wet etching process using a solution (HF / DIH ₂ O) diluted with hydrofluoric acid (HF) with ultra pure water (DI Water). A solution mixed at a ratio of 800: 1 is used.

Here, in the method of manufacturing a semiconductor device according to an embodiment of the present invention, the second DHF etching process is performed under the following conditions.

A solution in which DI water and hydrofluoric acid (HF) were mixed at 100: 1 to 800: 1 (DIW: HF = 400: 1 to 800: 1) was added at a capacity of 20 to 40 [mL / min]. Spray for [sec] ~ 30 [sec].

By using the DHF etching process, the oxide layer 150a and the particles having a thickness of 50 μm to 100 μm on the space pattern 120 are precisely removed.

In the above description, the conditions of the DHF etching process are 20 to 40 [ml / min using a mixture of ultra pure water (DI water) and HF in a range of 400: 1 to 800: 1 (DIW: HF = 400: 1 to 800: 1). It is described that the spraying for 10 [sec] ~ 30 [sec] in the capacity, this is the same condition as the volume and spraying time of the etching solution when the thickness of the oxide layer 150a remaining on the space pattern 120 is different May vary.

As described above, after completely removing the oxide layer 150a remaining on the space pattern 120 through the two-step BHF and DHF etching process, 0 ₃ or TEOS (Tetra Ethyl Ortho Silicate) is formed on the entire surface of the semiconductor substrate 110. Alternatively, at least one of USG (Undoped Silcate Glass) is coated to form a second oxide layer 150b in the remaining space of the trench 140 where the first oxide layer 150a is embedded as shown in FIG. 5.

Subsequently, the oxide layer 150b accumulated in the portion except for the trench 140 region is removed by a wet or dry etching method to complete the device isolation film STI of the semiconductor device.

Through the above-described manufacturing method, when the device isolation layer (STI) is formed in a structure having an aspect ratio of the trench 140 of 4 or more, the semiconductor device is embedded by filling the oxide layer 150 inside the trench 140 without voids. Can improve the production efficiency.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.

1 and 2 are cross-sectional views showing a method of forming a device isolation layer according to the prior art.

3 to 5 are cross-sectional views illustrating a method of forming an isolation layer in accordance with an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10, 110: substrate 20, 120: space pattern

30, 130: buffer layer 40, 140: trench

50, 150: gap fill oxide layer 60: void

170: protective layer

Claims (11)

A first step of forming a first gapfill oxide layer to a predetermined height inside the trench by applying an oxidizing material to the entire surface of the semiconductor substrate having the trench and the space pattern defining the isolation region; Etching a portion of the oxide layer formed on the space pattern; Forming a protective film on the semiconductor substrate on which the oxide layer is etched; A fourth step of further etching the oxide layer remaining on the space pattern; And forming a second gap fill oxide layer in the trench by applying an oxidizing material to the entire surface of the semiconductor substrate. The method of claim 1, The trench is a method of manufacturing a semiconductor device, characterized in that the longitudinal length has a value four times or more than the horizontal length. The method of claim 1, The oxidizing material of the first step is a method of manufacturing a semiconductor device, characterized in that at least one of 0 ₃ or TEOS (Tetra Ethyl Ortho Silicate) or USG (Undoped Silcate Glass). The method of claim 1, The first gap fill oxide layer of the first step is formed in the trench so as to have a ¼ to ½ height inside. The method of claim 1, The second step of etching a part of the oxide layer is an etching solution (HF: NHF ₄ = 1 to 6: 25 to 30) in which hydrofluoric acid (HF) and ammonium fluoride (NH ₄ F) are mixed at a ratio of 6:25 to 1:30. ) Is sprayed for 20 [sec] to 30 [sec] at a capacity of 20 to 40 [ml / min]. The method of claim 5, wherein Etching the oxide layer formed on the space pattern to have a thickness of 50 kPa to 100 kPa. The method of claim 5, wherein And after the second step, injecting N ₂ gas into the semiconductor substrate to dry the semiconductor substrate. The method of claim 1, In the third step of forming the protective film, a solution containing NH ₄ OH, H ₂ O ₂ , and DIH ₂ O at a ratio of 1: 2 to 4: 20 to 400 is added at a volume of 20 to 40 [mL / min] at 10 [min. ] 20 [min] by spraying for removing impurities and particles on said semiconductor substrate and forming said protective film. The method of claim 1, The fourth step of further etching the oxide layer is 10 [sec] to 30 with a 20-40 [mL / min] capacity of a solution in which ultrapure water (DI water) and HF are mixed at 100: 1 to 800: 1. and removing impurities and oxide layers remaining on the semiconductor substrate by spraying for [sec]. The method of claim 1, In the fifth step of forming the second gapfill oxide layer inside the trench, the second oxide layer is formed in the trench remaining space after the first oxide layer is embedded by applying at least one of 0 ₃ or TEOS or USG to the entire surface of the semiconductor substrate. Method of manufacturing a semiconductor device, characterized in that forming a. The method of claim 1, And after the fifth step, removing the oxide layers accumulated in the portions other than the trench region by using a wet or dry etching method.

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