KR20090002475A - Apparatus for exposure device for immersion lithography and the method for removing watermark using thereof - Google Patents

Apparatus for exposure device for immersion lithography and the method for removing watermark using thereof Download PDF

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Publication number
KR20090002475A
KR20090002475A KR1020070065835A KR20070065835A KR20090002475A KR 20090002475 A KR20090002475 A KR 20090002475A KR 1020070065835 A KR1020070065835 A KR 1020070065835A KR 20070065835 A KR20070065835 A KR 20070065835A KR 20090002475 A KR20090002475 A KR 20090002475A
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KR
South Korea
Prior art keywords
immersion liquid
wafer
vacuum pump
immersion
unit
Prior art date
Application number
KR1020070065835A
Other languages
Korean (ko)
Inventor
전진혁
Original Assignee
주식회사 하이닉스반도체
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Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020070065835A priority Critical patent/KR20090002475A/en
Publication of KR20090002475A publication Critical patent/KR20090002475A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Abstract

An exposure device for immersion lithography and a method for removing a water mark using the same are provided to suppress the water mark by removing immersion liquid generated on the wafer by using a vacuum pump. A wafer(300) is positioned on a scanning stage(305). An optical lens unit(320) transmits the light to the wafer. A scanner unit(340) is arranged between the optical lens unit and the wafer to perform the exposure process and includes an immersion liquid supply unit and an immersion liquid discharge unit. A vacuum pump(350) positioned in the lower part of the scanner absorbs the immersion liquid remaining on the wafer while the scanning stage moves. An air curtain positioned outside the vacuum pump controls the direction of the immersion liquid.

Description

Apparatus for exposure device for immersion lithography and the method for removing watermark using according to the present invention.

1 is a SEM photograph showing a watermark defect occurring on a wafer.

2A through 2C are diagrams for explaining the occurrence of a watermark defect in an immersion lithography process.

3 is a view showing for explaining an exposure apparatus for immersion lithography according to the present invention.

4 is an enlarged view illustrating a region 'B' of FIG. 3.

5 is a view for explaining the suction of water droplets by a vacuum pump.

The present invention relates to a lithographic method for manufacturing a semiconductor device, and more particularly, to an exposure apparatus for immersion lithography and a watermark removal method using the same.

Immersion lithography methods can form fine patterns as a technique of interposing a liquid medium instead of an air gap between the optical device and the wafer surface. The higher the refractive index of a material, the shorter the wavelength when light passes through it. The immersion lithography method utilizes this property. In the conventional exposure apparatus, air is used as a medium of light between the exposure lens and the wafer on which the photoresist film is formed, whereas the immersion lithography method has a refractive index higher than that of the conventional air (n = 1). An immersion liquid with water, such as water (n = 1.44), is used. As such, when water having a refractive index higher than that of air is used, the wavelength of the exposure equipment may be reduced, and thus finer patterns may be formed even when the same exposure equipment is used. In addition, the immersion lithography method has an increased depth of focus (DOF) at a specific numerical aperture compared to general dry lithography, and in particular, uses an optical device having a numerical aperture (NA) of 1.0 or more. It is possible to improve the maximum resolution of photolithography.

However, the immersion lithography method has a problem that it is difficult to finely control the medium between the exposure lens and the wafer because water is used as the liquid. Accordingly, watermark defects may occur on the wafer in the exposure process.

1 is a SEM photograph showing a watermark defect occurring on a wafer.

Water droplets may occur when the lens moves in one direction during the exposure process in the process of forming a pattern using immersion lithography. The droplets thus generated evaporate to produce defects that leave watermarks on the wafer. As such, when the watermark remains, pattern defects occur in the subsequent process of forming the pattern, and as shown in FIG. 1, the problem occurs that the pattern A is not properly formed in the area A in which the watermark was present. Accordingly, there is a need for a method capable of forming a desired pattern by controlling watermark defects generated during pattern formation using an immersion lithography method.

An object of the present invention is to provide an exposure apparatus for immersion lithography and a watermark removal method using the same, which can remove a watermark defect by improving the exposure apparatus for immersion lithography.

In order to achieve the above technical problem, an exposure apparatus for immersion lithography according to the present invention, the scanning stage (positioning stage) is disposed; An optical lens unit for transmitting light to the wafer; A scanner unit disposed between the optical lens unit and the wafer and including an immersion liquid supply unit and an immersion liquid discharge unit supplying the immersion liquid onto the wafer while performing an exposure process; A vacuum pump disposed at the bottom of the scanner to suck in the immersion liquid remaining on the wafer while the scanning stage is moved; And an air curtain disposed outside the vacuum pump to control the direction of the immersion liquid.

In the present invention, it is preferable that the vacuum pump further includes a circulation nozzle portion connected to the immersion liquid supply portion.

The vacuum pump is preferably disposed on both side surfaces of the optical lens unit.

In order to achieve the above technical problem, the watermark removal method using the exposure apparatus for immersion lithography according to the present invention, the wafer image using the exposure apparatus for immersion lithography comprising a scanning stage, an optical lens unit, an air curtain and a vacuum pump Removing the immersion liquid using the vacuum pump, while performing the exposure.

In the present invention, it is preferable that the vacuum pump further includes a circulation nozzle portion connected to the immersion liquid supply portion.

Removing the immersion liquid using the vacuum pump may include supplying air from the air curtain to fix the position of the immersion liquid; And sucking the immobilized immersion liquid using the vacuum pump.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

Immersion lithography processes are techniques that enhance the resolution of an exposure process by using immersion liquid instead of an air gap between the optical device and the wafer surface. The immersion lithography process utilizes the property that the wavelength of light becomes shorter as the refractive index is higher, and uses an immersion liquid such as water, which has a refractive index higher than that of air. As such, when the immersion liquid having a higher refractive index than air is used, a finer pattern can be formed even with the same exposure equipment. However, watermark defects may occur in the process of forming a pattern on the wafer using the immersion lithography process.

2A through 2C are diagrams for explaining the occurrence of a watermark defect in an immersion lithography process.

Referring to FIG. 2A, in a process of forming a pattern using an immersion lithography method, an exposure is performed while a wafer w coated with a photoresist film disposed corresponding to the lens 200 of the immersion lithography apparatus moves along one direction. do. When the wafer w moves in the direction of the arrow in FIG. 2A during the exposure, droplets 220 of the immersion liquid 210 may occur on the wafer w.

The water droplets 220 generated as described above are evaporated during the baking process to cure the photoresist film, as shown in FIG. 2B. Water droplets 220 generated on the wafer w are evaporated, but as shown in FIG. 2C, a watermark 230 and a residue 240 may be left on the wafer w to which the photoresist film is applied. have. When the pattern is formed on the wafer while the watermark 230 and the residue 240 remain, as shown in FIG. 1, the region where the watermark is present is not formed. ) May occur.

Accordingly, in the present invention, water droplets generated on the wafer are removed to suppress the generation of the watermark on the wafer.

3 is a view showing for explaining an exposure apparatus for immersion lithography according to the present invention.

Referring to FIG. 3, a scanning stage 305 on which a wafer 300 is placed is disposed on an exposure apparatus for immersion lithography according to the present invention. During the immersion lithography, the scanning stage 305 is movable in the direction in which the exposure process proceeds, as indicated by the arrows in the figure.

Next, an optical lens unit 320 that transmits light is disposed on the wafer 300 disposed on the scanning stage 305 at a position corresponding to the scanning stage 305. Next, a space 330 filled with an immersion liquid for improving the resolution of the optical lens unit 320 is disposed. And an immersion liquid supply part 370 and an immersion liquid discharge part 380 disposed between the optical lens part 320 and the wafer 300 to supply the immersion liquid on the wafer 300 while the exposure process is performed. The scanner unit 340 is disposed. And the vacuum pump (vaccum pump 350) and the vacuum pump for sucking the immersion liquid remaining on the wafer 300 while the scanning stage 305 is moved in the exposure process progress direction while being disposed below the scanner unit 340 ( An air curtain 360 is disposed outside the 350 to control the direction of the immersion liquid. Here, the predetermined distance 330 is spaced between the wafer 300 and the optical lens 320 to fill the immersion liquid.

The scanner 340 improves the resolution of the exposure process by using an immersion liquid having higher refractive index than air, such as water, instead of conventional air, between the optical lens unit 320 and the surface of the wafer 300. The scanner 340 may include an immersion liquid supply unit 370 for supplying an immersion liquid filled between the optical lens unit 320 and the wafer 300, and an immersion liquid discharge unit for discharging the immersion liquid used in the exposure process to the outside. 380 may be further included. In addition, the scanner 340 further includes an air curtain 360 that controls the direction of the immersion liquid that is filled between the wafer 300 and the optical lens unit 320. Here, the vacuum pump 350 may further include a circulation nozzle unit 320 connected to the immersion liquid supply unit 370. The circulation nozzle unit 320 serves to circulate and supply the immersion liquid sucked by the vacuum pump 350 to the immersion liquid supply unit 370 to supply the wafer 300.

Hereinafter, a method of removing a watermark using an exposure apparatus for immersion lithography will be described with reference to FIGS. 3 to 5. 4 is an enlarged view illustrating a region 'B' of FIG. 3. FIG. 5 is a view for explaining the suction of water droplets by a vacuum pump.

3 and 4, the wafer 300 is disposed on the scanning stage 305 of the exposure apparatus for immersion lithography. Next, the immersion exposure process is performed by moving the scanning stage 305 in one direction using the optical lens unit 320 disposed at a position corresponding to the scanning stage 305. Here, a space 330 in which the immersion liquid is filled is disposed between the optical lens unit 320 and the scanning stage 305 to improve the resolution of the optical lens unit 320. Also, the scanner includes an immersion supply unit 370 and an immersion liquid discharge unit 370 which are positioned between the optical lens unit 320 and the wafer 300 to supply the immersion liquid on the wafer 300 during the exposure process. The unit 340 is disposed. In the process of performing the immersion lithography exposure process, the immersion liquid is supplied between the optical device 310 and the wafer 300 from the immersion liquid supply unit 370, thereby improving the resolution of the exposure process. At this time, the lower side of the scanner unit 340 is disposed outside the vacuum pump 350 and the vacuum pump 350 for sucking the immersion liquid remaining on the wafer 300 while the scanning stage 305 is moved to An air curtain 360 is arranged to control the direction.

As shown in FIG. 4, the immersion liquid supplied from the immersion liquid supply unit 370 is moved by the air curtain 360 disposed at the lower end of the scanner 340 when the scanning stage 350 moves in the exposure progress direction. 340 is fixed so as not to leave the outside. Here, the air curtain 360 controls the direction of the immersion liquid by supplying air in an inward direction in which the exposure process is performed. As described above, the immersion liquid whose direction is controlled by the air curtain 360 sucks the immersion liquid using the vacuum pump 350 disposed inside the air curtain 360. The immersion liquid sucked by using the vacuum pump 350 is discharged to the outside through the immersion liquid discharge part 380 and removed. At this time, the immersion liquid is circulated and supplied back to the immersion liquid supply part 370 through the circulation nozzle part 320 (see FIG. 4) connected to the vacuum pump 350 and the immersion liquid supply part 370 to be supplied onto the wafer 300. May be

Accordingly, the immersion liquid droplets are sucked into the vacuum pump 350 to be discharged to the outside through the immersion liquid discharge part 380 while the wafer is moved and the exposure is performed, or the circulation nozzle part 320 is removed. By again supplying the wafer 300, the cause of the watermark can be removed. In addition, the consumption of the immersion liquid can be reduced by supplying the immersion liquid again onto the wafer 300.

As described so far, according to the exposure apparatus for immersion lithography and the watermark removing method using the same, the watermark is removed by removing the immersion liquid generated on the wafer using the exposure apparatus for immersion lithography including a vacuum pump. Can be suppressed. Accordingly, the bad pattern can be prevented from being formed by the watermark.

Claims (6)

A scanning stage in which the wafer is placed; An optical lens unit for transmitting light to the wafer; A scanner unit disposed between the optical lens unit and the wafer and including an immersion liquid supply unit and an immersion liquid discharge unit supplying the immersion liquid onto the wafer while performing an exposure process; A vacuum pump disposed at the bottom of the scanner to suck in the immersion liquid remaining on the wafer while the scanning stage is moved; And And an air curtain disposed outside the vacuum pump to control the direction of the immersion liquid. The method of claim 1, Wherein said vacuum pump further comprises a circulation nozzle portion connected with said immersion liquid supply. The method of claim 1, And the vacuum pump is disposed on both side surfaces of the optical lens unit. And removing the immersion liquid using the vacuum pump while performing exposure on the wafer using an exposure apparatus for immersion lithography including a scanning stage, an optical lens unit, an air curtain and a vacuum pump. A watermark removal method using an exposure apparatus for immersion lithography. The method of claim 4, wherein The vacuum pump further comprises a circulation nozzle unit connected to the immersion liquid supply unit. Watermark removal method using an exposure apparatus for immersion lithography. The method of claim 4, wherein removing the immersion liquid using the vacuum pump comprises: Supplying air from the air curtain to fix the position of the immersion liquid; And And sucking the immersion liquid having a fixed position using the vacuum pump.
KR1020070065835A 2007-06-29 2007-06-29 Apparatus for exposure device for immersion lithography and the method for removing watermark using thereof KR20090002475A (en)

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KR1020070065835A KR20090002475A (en) 2007-06-29 2007-06-29 Apparatus for exposure device for immersion lithography and the method for removing watermark using thereof

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KR1020070065835A KR20090002475A (en) 2007-06-29 2007-06-29 Apparatus for exposure device for immersion lithography and the method for removing watermark using thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111381448A (en) * 2018-12-28 2020-07-07 上海微电子装备（集团）股份有限公司 Liquid control system and method for immersion lithography apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111381448A (en) * 2018-12-28 2020-07-07 上海微电子装备（集团）股份有限公司 Liquid control system and method for immersion lithography apparatus

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