KR20080111796A - Spherical nano-ceria particle method which being capable of controlling surface-area - Google Patents
Spherical nano-ceria particle method which being capable of controlling surface-area Download PDFInfo
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- KR20080111796A KR20080111796A KR1020070060185A KR20070060185A KR20080111796A KR 20080111796 A KR20080111796 A KR 20080111796A KR 1020070060185 A KR1020070060185 A KR 1020070060185A KR 20070060185 A KR20070060185 A KR 20070060185A KR 20080111796 A KR20080111796 A KR 20080111796A
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- C01F17/00—Compounds of rare earth metals
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- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
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- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Abstract
Description
도면 1은 종래의 산화세륨 제조방법과 본 발명의 제조방법의 비교 도면이다.1 is a comparative view of a conventional cerium oxide production method and the production method of the present invention.
도면 2는 본 발명에 따른 400℃에서 소성하여 합성한 구형 나노 산화세륨 나노 분말의 확대사진이다.Figure 2 is an enlarged photograph of the spherical nano cerium oxide nano-powder synthesized by firing at 400 ℃ according to the present invention.
도면 3는 본 발명에 따른 500℃에서 소성하여 합성한 구형 나노 산화세륨 나노 분말의 확대사진이다.Figure 3 is an enlarged photograph of the spherical nano cerium oxide nano-powder synthesized by firing at 500 ℃ according to the present invention.
도면 4는 본 발명에 따른 600℃에서 소성하여 합성한 구형 나노 산화세륨 나노 분말의 확대사진이다.Figure 4 is an enlarged photograph of the spherical nano cerium oxide nano-powder synthesized by firing at 600 ℃ according to the present invention.
도면 5는 본 발명에 따른 700℃에서 소성하여 합성한 구형 나노 산화세륨 나노 분말의 확대사진이다.Figure 5 is an enlarged photograph of the spherical nano cerium oxide nano-powder synthesized by firing at 700 ℃ according to the present invention.
본 발명은 산화세륨 나노 분말의 제조방법에 관한 것으로, 보다 상세하게는 수용성 용매하에서 세륨염과 카보네이트 반응체를 침전반응시켜 탄산세륨을 제조한 후, 이를 소성처리하여 구형의 산화세륨 나노 분말을 제조하되, 소성온도에 따라 결정크기의 큰 변화없이 비표면적을 조절할 수 있는 구형의 산화세륨 나노 분말의 제조방법에 관한 것이다.The present invention relates to a method for producing cerium oxide nanopowders, and more particularly, to precipitate cerium carbonates by precipitation of cerium salts and carbonate reactants in a water-soluble solvent to prepare cerium carbonates, and then firing them to prepare spherical cerium oxide nanopowders. However, the present invention relates to a method for producing spherical cerium oxide nanopowders which can control specific surface areas without large change in crystal size according to firing temperature.
또한 본 발명은 상기 침전반응시켜 탄산세륨을 제조한 후, 세척없이소성처리하는 단계를 포함하는 것을 특징으로 하는 구형의 산화세륨 나노 분말의 제조방법에 관한 것이다.In another aspect, the present invention relates to a method for producing a spherical cerium oxide nano-powder comprising the step of producing the cerium carbonate by the precipitation reaction, followed by baking without washing.
반도체 공정 중 CMP공정은 산화세륨입자를 이용하여 표면을 연마하는 과정으로 공정상의 필요조건은 일정한 연마율과 스크래치 발생이 적어야 한다. 일반적으로 나노 산화세륨은 강도가 우수하여 반도체 CMP 연마제로 널리 사용되고 있다.The CMP process in the semiconductor process is a process of polishing the surface using cerium oxide particles. The process requirements should be a constant polishing rate and less scratches. In general, nano cerium oxide has excellent strength and is widely used as a semiconductor CMP abrasive.
반도체 CMP 연마제용 산화세륨을 합성하기 위해서, 종래에는 수산화 세륨을 고온고압의 액상에서 산화세륨을 합성하는 제조 방법과 탄산세륨, 세륨클로라이드 등의 세륨염을 소성하여 산화세륨을 제조하는 방법 등이 일반적인 방법이나 이러한 제조방법을 따르면 구형의 입자가 생성되지 않고 판상이나 막대 모양의 결정성을 갖는 산화세륨이 합성되며, 따라서 상기 방법으로 제조된 산화세륨은 반도체 웨이퍼의 평탄화 과정에서 스크래치가 발생하는 문제가 발생하게 되었다.In order to synthesize cerium oxide for a semiconductor CMP abrasive, conventionally, a method for synthesizing cerium hydroxide in a liquid phase at high temperature and high pressure, and a method for producing cerium oxide by calcining cerium salts such as cerium carbonate and cerium chloride are common. According to this method or this manufacturing method, a cerium oxide having plate-shaped or rod-like crystallinity is synthesized without spherical particles being produced. Therefore, the cerium oxide produced by the above method has a problem that scratches occur during the planarization of a semiconductor wafer. It happened.
또한, 종래의 방법으로는 소성온도 높을수록 결정크기가 커지고 비표면적이 작아지는 문제점도 발생하였다.In addition, the conventional method also has a problem that the higher the calcination temperature, the larger the crystal size and the smaller the specific surface area.
제조공정 상에 있어서도, 종래의 산화세륨 합성공정은 탄산세륨을 원심분리나 여과를 통해서 세척을 하고 소성하는 과정을 거쳐야 하나 이러한 방법은 대량생산 시 원심분리나 여과를 사용하기 힘들다는 문제점이 발생하게 되었다.Even in the manufacturing process, the conventional cerium oxide synthesis process has to go through the process of washing and calcining cerium carbonate through centrifugation or filtration, but this method is difficult to use centrifugation or filtration during mass production It became.
본 발명이 이루고자 하는 기술적 과제는 탄산세륨의 소성온도에 따라 분말의 결정크기 변화없이 비표면적을 조절할 수 있는 구형의 산화세륨 나노 분말의 제조방법을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a method for preparing spherical cerium oxide nanopowders capable of adjusting specific surface areas without changing the crystal size of powders according to the firing temperature of cerium carbonate.
본 발명이 이루고자 하는 다른 기술적 과제는 상기 탄산세륨을 침전한 후 세척단계 없이 소성처리함으로써 공정상의 효율을 향상시키는 구형의 산화세륨 나노 분말의 제조방법을 제공함에 있다.Another technical problem to be achieved by the present invention is to provide a method for producing spherical cerium oxide nanopowder to improve the process efficiency by precipitating the cerium carbonate and then firing without washing step.
본 발명은 a) 수용성 용매하에서 세륨염과 카보네이트 반응체를 침전반응시켜 탄산세륨을 제조하는 단계 및 b) 상기 탄산세륨을 300 내지 800℃에서 소성처리하여, 10 내지 20 nm의 결정크기를 갖도록 조절하는 단계를 포함하는 구형의 산화세륨 나노 분말의 제조방법을 제공한다.The present invention a) preparing a cerium carbonate by precipitating a cerium salt and a carbonate reactant in a water-soluble solvent and b) calcining the cerium carbonate at 300 to 800 ℃, adjusted to have a crystal size of 10 to 20 nm It provides a method for producing a spherical cerium oxide nano powder comprising the step of.
또한 본 발명은 상기 a)단계에서 제조한 탄산세륨을 세척없이 소성시키는 단계를 포함하는 것을 특징으로 하는 구형의 산화세륨 나노 분말의 제조방법을 제공한다.In another aspect, the present invention provides a method for producing a spherical cerium oxide nano-powder comprising the step of firing the cerium carbonate prepared in step a) without washing.
이하 본 발명을 상세하게 설명한다. Hereinafter, the present invention will be described in detail.
본 발명은 a) 수용성 용매하에서 세륨염과 카보네이트 반응체를 침전반응시켜 탄산세륨을 제조하는 단계 및 b) 상기 탄산세륨을 300 내지 800 ℃에서 소성처리하여, 10 내지 20 nm의 결정크기를 갖도록 조절하는 단계를 포함하는 구형의 산화세륨 나노 분말의 제조방법을 제공한다.The present invention a) preparing a cerium carbonate by precipitating the cerium salt and carbonate reactant in a water-soluble solvent and b) calcining the cerium carbonate at 300 to 800 ℃, adjusted to have a crystal size of 10 to 20 nm It provides a method for producing a spherical cerium oxide nano powder comprising the step of.
또한 본 발명은 상기 b)단계의 소성처리 온도를 300 내지 800 ℃로 하여 30 내지 90 m2/g의 비표면적을 갖도록 조절하는 것을 특징으로 하는 구형의 산화세륨 나노 분말의 제조방법을 제공한다.In another aspect, the present invention provides a method for producing a spherical cerium oxide nano-powder, characterized in that to adjust to have a specific surface area of 30 to 90 m 2 / g by the firing temperature of step b) to 300 to 800 ℃.
또한 본 발명은 상기 b)단계의 소성처리 온도를 400 내지 700 ℃로 하여 50 내지 85 m2/g의 비표면적을 갖도록 조절하는 것을 특징으로 하는 구형의 산화세륨 나노 분말의 제조방법을 제공한다.In another aspect, the present invention provides a method for producing a spherical cerium oxide nano-powder, characterized in that to adjust the firing temperature of step b) to 400 to 700 ℃ to have a specific surface area of 50 to 85 m 2 / g.
본 발명에서 사용되는 상기 세륨염은 세륨 나이트레이트, 세륨 클로The cerium salt used in the present invention is cerium nitrate, cerium claw
라이드, 세륨 아세테이트, 또는 세륨 술포네이트 등을 사용할 수 있다.Rides, cerium acetate, cerium sulfonate, and the like.
상기 세륨염은 수용성 용매 및 세륨염 합에 대하여 5 내지 20 중량%의 농도로 포함되는 것이 바람직하며, 이는 상기 농도 범위 내에서 침상형 입자 형성이 최소화되어 전체적으로 구형 입자의 산화세륨 나노 분말 형성에 유리하게 작용한다. The cerium salt is preferably included in a concentration of 5 to 20% by weight relative to the water-soluble solvent and the cerium salt combination, which minimizes the formation of needle-shaped particles within the concentration range is advantageous for the formation of cerium oxide nano powder of the spherical particles as a whole It works.
본 발명에 사용되는 상기 카보네이트 반응체는 암모늄 카보네이트(ammonium carbonate), 요소, 또는 암모늄 바이카보네이트(ammoium bicarbonate) 등을 사용할 수 있으며, 바람직하게는 암모늄 카보네이트를 사용하는 것이다.As the carbonate reactant used in the present invention, ammonium carbonate, urea, or ammonium bicarbonate may be used, and ammonium carbonate is preferably used.
상기 카보네이트 반응체는 수용성 용매, 세륨염, 및 카보네이트 반응체 합에 대하여 5 내지 20 중량%의 농도로 포함되는 것이 바람직하며, The carbonate reactant is preferably included in a concentration of 5 to 20% by weight relative to the total of the water-soluble solvent, cerium salt, and carbonate reactant,
이는 상기 농도 범위 내에서 침상형 입자 형성이 최소화되어 전체적으로 구형 입자의 산화세륨 나노 분말 형성에 유리하게 작용한다.This minimizes the formation of needle-shaped particles within the above concentration range, which advantageously acts to form the cerium oxide nano powder of the spherical particles as a whole.
본 발명에 사용되는 상기 수용성 용매는 통상의 수용성 용매를 사용할 수 있 으며, 특히 물을 사용하는 것이 바람직하다.As the water-soluble solvent used in the present invention can be used a conventional water-soluble solvent, it is particularly preferable to use water.
상기 수용성 용매는 세륨염 및 카보네이트 반응체의 사용량에 따라 잔량으로 포함될 수 있다.The water-soluble solvent may be included in the remaining amount depending on the amount of cerium salt and carbonate reactant used.
상기와 같이 수용성 용매하에서 세륨염과 카보네이트 반응체를 침전반응시켜 탄산세륨으로 제조되는데, 이때 상기 침전반응은 40 내지 120 ℃의 온도에서 5 내지 30 시간 동안 실시되는 것이 바람직하며, 상기 온도 범위 내에서 구형의 입자 형성이 유리해 진다.As described above, the cerium salt and the carbonate reactant are precipitated in an aqueous solvent to prepare cerium carbonate, wherein the precipitation is preferably performed at a temperature of 40 to 120 ° C. for 5 to 30 hours, within the above temperature range. Spherical particle formation is advantageous.
상기 탄산세륨은 300내지 800℃ 온도범위 안에서 소성처리하여 결정크기가 10 내지 20 nm인 구형의 산화세륨 나노 분말을 제조할 수 있다.The cerium carbonate may be calcined within a temperature range of 300 to 800 ° C. to prepare spherical cerium oxide nano powder having a crystal size of 10 to 20 nm.
종래의 산화세륨 제조방법과 달리, 소성온도가 증가하여도 산화세륨의 결정크기는 10 내지 20 nm로 유지된다.Unlike the conventional cerium oxide manufacturing method, the crystal size of cerium oxide is maintained at 10 to 20 nm even if the firing temperature is increased.
또한, 300℃ 내지 800℃ 온도에서 상기 탄산세륨을 소성처리하면 비표면적이 30 내지 90 m2/g인 구형의 산화세륨 나노 분말을 제조할 수 있으며, 400℃ 내지 700℃ 온도에서 상기 탄산세륨을 소성처리하면 50 내지 85 m2/g인 구형의 산화세륨을 분말을 제조할 수 있다.In addition, when the cerium carbonate is calcined at a temperature of 300 ° C. to 800 ° C., a spherical cerium oxide nano powder having a specific surface area of 30 to 90 m 2 / g may be prepared, and the cerium carbonate may be prepared at a temperature of 400 ° C. to 700 ° C. When firing, a powder of spherical cerium oxide of 50 to 85 m 2 / g can be prepared.
본 발명은 상기 a)단계의 탄산세륨을 세척없이 건조한 후 b)단계의 소성처리하여 구형 산화세륨 나노 분말을 제조할 수 있으며, 또한 40∼60 ℃의 진공상태에서 건조시킨 후 소성처리하여 구형의 산화세륨 나노 분말을 제조할 수도 있다. a)단계의 탄산세륨을 세척없이 건조한 후 이를 b)단계의 소성처리를 하는 것 외의 나 머지 제조방법은 상기 언급된 바와 동일하다.The present invention can dry the cerium carbonate of step a) without washing and then calcined in step b) to produce spherical cerium oxide nanopowder, and also dried in a vacuum at 40-60 ° C. Cerium oxide nano powders may also be prepared. The rest of the manufacturing method is the same as mentioned above, except that the cerium carbonate in step a) is dried without washing and then calcined in step b).
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범위가 하기 실시예에 한정되는 것은 아니다.Hereinafter, preferred examples are provided to help understanding of the present invention, but the following examples are merely to illustrate the present invention, and the scope of the present invention is not limited to the following examples.
[실시예]EXAMPLE
실시예Example 1 One
(탄산세륨 제조)(Manufacture of cerium carbonate)
1 L의 유리 반응기에 세륨 나이트레이트 65.1 g과 물 500 g을 투입하고 300 rpm의 교반속도로 교반하여 완전히 용해시켰다. 그 다음 암모늄 카보네이트 43.2 g을 20 분에 걸쳐 천천히 투입하였다. 이때, 암모늄 카보네이트 투입시 반응하면서 기체가 발생하므로 천천히 투입하여 반응액이 넘치지 않도록 하였다. 상기 암모늄 카보네이트를 분할 투입한 후, 300 rpm의 교반속도를 유지하면서 반응기의 내부온도를 90 ℃로 승온시켰다. 이때, 승온속도는 약 1 시간 동안 20 ℃에서 반응온도인 90 ℃까지 도달하도록 하였으며, 승온 중 약 20 분이 경과한 후에 물 200 g을 추가로 투입하여 교반이 지속적으로 이루어지도록 하였다. 상기 반응온도(90 ℃) 도달부터 16 시간 동안 더욱 반응시킨 후, 반응물을 배출시키고 자연냉각시켰다. 그리고 탄산세륨 세척없이 스프레이 드라이어(spray drayer)를 이용하여 inlet 온도 230℃, outlet 110℃조건에서 24시간 동안 건조하였다.65.1 g of cerium nitrate and 500 g of water were added to a 1 L glass reactor, followed by stirring at 300 rpm. 43.2 g of ammonium carbonate were then slowly added over 20 minutes. At this time, since gas is generated while reacting when the ammonium carbonate is added, the reaction solution is added slowly so as not to overflow the reaction solution. After dividing the ammonium carbonate, the temperature inside the reactor was raised to 90 ° C. while maintaining a stirring speed of 300 rpm. At this time, the temperature increase rate was to reach the reaction temperature of 90 ℃ at 20 ℃ for about 1 hour, and after about 20 minutes of the temperature increase was added to 200 g of water to continue stirring. After further reacting for 16 hours from reaching the reaction temperature (90 ° C.), the reactants were discharged and naturally cooled. And, without washing the cerium carbonate using a spray dryer (spray drayer) was dried for 24 hours at inlet temperature 230 ℃, outlet 110 ℃ conditions.
(산화세륨 제조)(Cerium oxide production)
상기 분말 건조된 탄산세륨 30 g을 400 ℃에서 30분 동안 소성하였고, 서서히 냉각하여 X-선 회절분석을 통해 산화세륨(CeO2)임을 확인하였다. 비트발트법을 이용한 X-선 회절분석을 통한 측정 결과 14.74nm 결정크기를 가지고 BET 측정결과 58.48 m2/g의 비표면적을 가지는 산화세륨임을 확인하였다.30 g of the powdered dried cerium carbonate was calcined at 400 ° C. for 30 minutes, and gradually cooled to confirm that it was cerium oxide (CeO 2 ) through X-ray diffraction analysis. X-ray diffraction analysis using the bit-balt method showed that the cerium oxide had a crystal size of 14.74 nm and a specific surface area of 58.48 m 2 / g.
실시예Example 2 2
(산화세륨 제조)(Cerium oxide production)
상기 실시예 1에서 분말 건조된 탄산세륨 30 g을 500 ℃에서 30분 동안 소성하였고, 서서히 냉각하여 X-선 회절분석을 통해 산화세륨(CeO2)임을 확인하였다. 비트발트법을 이용한 X-선 회절분석을 통한 측정 결과 15.77nm 결정크기를 가지고 BET 측정결과 83.02 m2/g의 비표면적을 가지는 산화세륨임을 확인하였다.30 g of the powder-dried cerium carbonate in Example 1 was calcined at 500 ° C. for 30 minutes, and gradually cooled to confirm that it was cerium oxide (CeO 2 ) through X-ray diffraction analysis. As a result of X-ray diffraction analysis using the bit-balt method, it was confirmed that the cerium oxide had a crystal size of 15.77 nm and a specific surface area of 83.02 m 2 / g.
실시예Example 3 3
(산화세륨 제조)(Cerium oxide production)
상기 실시예 1에서 분말 건조된 탄산세륨 30 g을 600 ℃에서 30분 동안 소성하였고, 서서히 냉각하여 X-선 회절분석을 통해 산화세륨(CeO2)임을 확인하였다. 비트발트법을 이용한 X-선 회절분석을 통한 측정 결과 15.83nm 결정크기를 가지고 BET 측정결과 74.34 m2/g의 비표면적을 가지는 산화세륨임을 확인하였다.30 g of the powder-dried cerium carbonate in Example 1 was calcined at 600 ° C. for 30 minutes, and gradually cooled to confirm that it was cerium oxide (CeO 2 ) through X-ray diffraction analysis. X-ray diffraction analysis using the bit-balt method showed that the cerium oxide had a crystal size of 15.83 nm and a specific surface area of 74.34 m 2 / g.
실시예Example 4 4
(산화세륨 제조)(Cerium oxide production)
상기 실시예 1에서 분말 건조된 탄산세륨 30 g을 700 ℃에서 30분 동안 소성하였고, 서서히 냉각하여 X-선 회절분석을 통해 산화세륨(CeO2)임을 확인하였다. 비트발트법을 이용한 X-선 회절분석을 통한 측정 결과 14.90nm 결정크기를 가지고 BET 측정결과 52.04 m2/g의 비표면적을 가지는 산화세륨임을 확인하였다.30 g of the powdered dried cerium carbonate in Example 1 was calcined at 700 ° C. for 30 minutes, and gradually cooled to confirm that it was cerium oxide (CeO 2 ) through X-ray diffraction analysis. X-ray diffraction analysis using the bit-balt method showed that the cerium oxide had a crystal size of 14.90 nm and a specific surface area of 52.04 m 2 / g.
상기 실시예로부터 얻어진 소성온도에 따른 산화세륨 나노 분말의 결정크기 및 비표면적을 아래 표1에 나타내었다.The crystal size and specific surface area of the cerium oxide nanopowder according to the firing temperature obtained from the above example are shown in Table 1 below.
[표 1] TABLE 1
표 1을 통하여, 소성온도가 증가하여도 산화세륨의 결정크기의 큰 변화없이 비표면적을 조절할 수 있음을 확인하였다. Through Table 1, it was confirmed that even if the firing temperature was increased, the specific surface area could be adjusted without a large change in the crystal size of cerium oxide.
본 발명에 따르면 수용성 용매하에서 세륨염과 카보네이트 반응체를 침전반응시켜 탄산세륨을 제조하고, 이를 세척과정 없이 소성처리하여 구형의 산화세륨 나노 분말을 제조하므로 공정상 효율이 증가할 뿐더러, 세척과정 여부와 관계없이 상기 탄산세륨의 소성온도에 따라 산화세륨 나노 분말의 비표면적을 조절할 수 있 으므로 바도체 웨이퍼 내 CMP 공정에서 일정한 연마율을 유지하면서 스크래치를 감소시킬 수 있으며, 촉매로 사용시에도 비표면적을 조절하여 촉매활성을 높일 수 있는 효과가 있다.According to the present invention, the cerium carbonate is prepared by precipitating the cerium salt and the carbonate reactant in an aqueous solvent, and then firing the same without washing to produce spherical cerium oxide nanopowder, thus increasing the efficiency of the process and whether or not the washing process is performed. Irrespective of the specific surface area of the cerium oxide nanopowder can be controlled according to the firing temperature of the cerium carbonate, it is possible to reduce the scratch while maintaining a constant polishing rate in the CMP process in the semiconductor wafer. There is an effect to increase the catalytic activity by controlling.
이상에서 본 발명의 기재된 구체예에 대해서만 상세히 설명되었지만, 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although only described in detail with respect to the described embodiments of the present invention, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, it is natural that such variations and modifications belong to the appended claims. .
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101108226B1 (en) * | 2009-09-08 | 2012-01-31 | 주식회사 엘지화학 | Method for preparing cerium oxide |
| CN107522221A (en) * | 2017-09-15 | 2017-12-29 | 福州大学 | A kind of method that active porous nano ceric oxide is prepared based on inorganic template |
| CN113003601A (en) * | 2021-02-20 | 2021-06-22 | 辽宁科隆精细化工股份有限公司 | Preparation method of spherical nano cerium dioxide |
| CN115403064A (en) * | 2022-09-20 | 2022-11-29 | 中国科学院长春应用化学研究所 | Cerium oxide and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101108226B1 (en) * | 2009-09-08 | 2012-01-31 | 주식회사 엘지화학 | Method for preparing cerium oxide |
| CN107522221A (en) * | 2017-09-15 | 2017-12-29 | 福州大学 | A kind of method that active porous nano ceric oxide is prepared based on inorganic template |
| CN113003601A (en) * | 2021-02-20 | 2021-06-22 | 辽宁科隆精细化工股份有限公司 | Preparation method of spherical nano cerium dioxide |
| CN113003601B (en) * | 2021-02-20 | 2023-08-04 | 辽宁科隆精细化工股份有限公司 | Preparation method of spherical nano cerium dioxide |
| CN115403064A (en) * | 2022-09-20 | 2022-11-29 | 中国科学院长春应用化学研究所 | Cerium oxide and preparation method thereof |
| CN115403064B (en) * | 2022-09-20 | 2023-10-13 | 中国科学院长春应用化学研究所 | Cerium oxide and preparation method thereof |
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