KR20080109384A - Organic light emitting display and method for manufacturing the same - Google Patents

Abstract

An organic elestroluminescent display device and a manufacturing method thereof are provided to prevent step coverage characteristic degradation of a second electrode formed in the upper part of an organic light-emitting layer by making a sacrificed pattern having under cut structure thin. An organic elestroluminescent display device(100) comprises a substrate(102), a thin film transistor(TFT), an insulating layer, a transparent electrode(112), a pixel defined layer(114), a sacrificed pattern(116) and a reflection pattern(104b). The thin film transistor is formed on the substrate. The thin film transistor comprises a gate electrode(104a), a source electrode(106a), a drain electrode(106b), an active pattern(108) and a gate insulating layer(110). The insulating layer exposes a part of the drain electrode. The transparent electrode is formed on the insulating layer in which the contact hole is built up. The transparent electrode is connected to the drain electrode through the contact hole. The pixel defined layer is formed on the insulating layer and the transparent electrode in which the contact hole is built up. The pixel defined layer defines the light emission region by exposing a part of the transparent electrode. The sacrificed pattern is formed between the transparent electrode and pixel defined layer. The undercut structure is molded according to the edge of the light emission region in the sacrificed pattern. The reflection pattern is overlapped with the transparent electrode and one or both of the gate insulating layer and the insulating layer in which the contact hole are built up are formed between the reflection pattern and the transparent electrode.

Description

Organic electroluminescent display and manufacturing method thereof {ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR MANUFACTURING THE SAME}

1 is a cross-sectional view for schematically describing an organic light emitting display device according to an exemplary embodiment.

2A through 2H are cross-sectional views illustrating processes of manufacturing an organic light emitting display device according to an embodiment of the present invention.

{Description of symbols for main parts of the drawing}

100: organic electroluminescent display 102: substrate

TFT: thin film transistor 104a: gate electrode

104b: reflection pattern 106a: source electrode

106b: drain electrode 108: active pattern

110: gate insulating film 112: transparent electrode

114: pixel defining layer 116: sacrificial pattern

118a: first electrode 120: organic light emitting layer

122: second electrode 124: interlayer insulating film

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel display, and more particularly, to an organic light emitting display and a method of manufacturing the same.

Recently, the importance of the flat panel display (FPD) is increasing with the development of multimedia. In response to this, a liquid crystal display (LCD), a plasma display panel (PDP), a field emission display (FED), an organic light emitting device (organic light emitting device), etc. Various flat panel display devices are put into practical use.

In particular, the organic light emitting display device has a high response speed, low power consumption, and self emitting light. In addition, since the organic light emitting display device has no problem in viewing angle, there is an advantage as a moving image display medium regardless of its size. In addition, since the organic light emitting display device can be manufactured at a low temperature and can be simply manufactured by using a conventional semiconductor process technology, it has attracted attention as a next generation flat panel display device.

The organic light emitting display device includes a substrate, an organic emission layer formed on the substrate, and first and second electrodes facing each other with the organic emission layer therebetween.

In the conventional organic light emitting display device having the above-described configuration, after forming a first electrode on a substrate, an organic light emitting layer is formed on the first electrode, and then a second electrode is formed on the organic light emitting layer. It can be produced through a series of processes to form.

However, the first electrode is generally formed through a photolithography process, in which an oxide layer may be formed on the surface of the first electrode by exposing the first electrode to air and / or moisture.

As such, when the oxide film is formed on the surface of the first electrode, the driving voltage of the organic light emitting display device may increase, and further, the first electrode may not perform its role.

In addition, the above-described problem may act as a cause of display quality degradation, for example, luminance of the organic light emitting display device.

Accordingly, an object of the present invention is to provide an organic electroluminescent display and a method of manufacturing the same, which can reduce driving voltage and improve display quality.

Further technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned above are clearly understood by those skilled in the art from the following description. Can be understood.

In accordance with an aspect of the present invention, an organic light emitting display device includes: a substrate; A thin film transistor formed on the substrate and having a gate electrode, a source electrode, a drain electrode, an active pattern, and a gate insulating film; An insulating film on which contact holes exposing a portion of the drain electrode are formed; A transparent electrode formed on the insulating layer on which the contact hole is formed and connected to the drain electrode through the contact hole; A pixel defining layer formed on the insulating layer and the transparent electrode on which the contact hole is formed and defining a light emitting region by exposing a portion of the transparent electrode; A sacrificial pattern formed between the transparent electrode and the pixel defining layer and having an undercut structure formed along an edge of the emission area; And a reflective pattern overlapping the transparent electrode with at least one of the gate insulating film and the insulating film on which the contact hole is formed.

Meanwhile, a method of manufacturing an organic light emitting display device according to an embodiment of the present invention for achieving the above technical problem comprises the steps of providing a substrate; Forming a thin film transistor and a reflective pattern including a gate electrode, a source electrode, a drain electrode, an active pattern, and a gate insulating layer on the substrate; Forming an interlayer insulating layer having a contact hole exposing a portion of the drain electrode on the substrate; Sequentially forming a transparent electrode and a sacrificial layer connected to the drain electrode through the contact hole on the interlayer insulating layer; Forming a pixel defining layer exposing a portion of the sacrificial layer to define a light emitting region on the substrate; Removing a portion of the exposed sacrificial layer to form a sacrificial pattern under the pixel defining layer and having an undercut structure, and exposing a portion of the transparent electrode; And forming a patterned first electrode for each subpixel on the exposed transparent electrode by using the undercut structure.

Specific details of other embodiments are included in the detailed description and the drawings. Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings.

Hereinafter, an organic light emitting display device and a manufacturing method thereof according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

In an exemplary embodiment of the present invention, a top emission type organic electroluminescent display is described as an organic electroluminescent display. However, the present invention is not limited thereto, and the present invention can be applied not only to a bottom emission type organic electroluminescent display device but also to a double sided emission organic electroluminescent display device.

In the organic light emitting diode display according to the exemplary embodiment, a thin film transistor (TFT) is formed as an inverted staggered structure as an example. However, the present invention is not limited thereto, and the thin film transistor may be applied when the thin film transistor is formed of any one structure selected from staggered, coplanar, and inverted staggered structures.

In the organic light emitting diode display according to an exemplary embodiment of the present invention, when the first electrode is a cathode and the second electrode is an anode, that is, an organic light emitting display having an inverted structure. The apparatus will be described as an example. However, the present invention is not limited thereto, and the present invention is also applicable to an organic electroluminescent display device in which the first electrode is an anode and the second electrode is a cathode, that is, formed in a normal structure.

1 is a cross-sectional view for schematically describing an organic light emitting display device according to an exemplary embodiment.

Referring to FIG. 1, an organic light emitting display device 100 according to an exemplary embodiment of the present invention includes a substrate 102, a thin film transistor (TFT), a reflective pattern 104b, and a transparent electrode formed on the substrate 102. 112, a pixel defining layer 114, and a sacrificial pattern 116. The thin film transistor TFT may include a gate electrode 104a, a source electrode 106a, a drain electrode 106b, an active pattern 108, and a gate insulating layer 110. In addition, although not illustrated, the thin film transistor TFT may further include an active contact pattern 108 and a source electrode 106a or an ohmic contact pattern positioned between the active pattern 108 and the drain electrode 106b.

In addition, the organic light emitting display device 100 according to an exemplary embodiment of the present invention further includes a first electrode 118a, an organic emission layer 120, and a second electrode 122 formed on the substrate 102. It may further include an organic light emitting diode.

Hereinafter, each component will be described in more detail.

A substrate is provided. The substrate 102 may include transparent glass, plastic, or metal.

The gate electrode 104a may turn on or turn off the thin film transistor TFT using a data voltage provided from a data line (not shown).

The gate electrode 104a is formed of at least one layer of aluminum, molybdenum, molybdenum, titanium, gold, au, silver, palladium, or an alloy thereof. It may be formed into a structure.

The source electrode 106a may be formed to overlap the gate electrode 104a and to be connected to the active pattern 108.

The drain electrode 106b may be formed to overlap the gate electrode 104a and may be connected to the active pattern 108. In addition, the drain electrode 106b may be formed to be spaced apart from the source electrode 106a on the gate electrode 104a by a predetermined interval.

The source electrode 106a and the drain electrode 106b are made of aluminum (Al), molybdenum (Mo), titanium (Ti), gold (Au), silver (Ag), palladium (Pd), or an alloy thereof. It can be formed in a laminated structure of at least one layer. In this case, the source electrode 106a and the drain electrode 106b may be formed on the same plane with the same material.

The active pattern 108 may form a channel of the thin film transistor TFT. The active pattern 108 may be formed of amorphous silicon (a-Si) or polysilicon (p-Si) material.

The gate insulating layer 110 may be formed of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

Here, the thin film transistor TFT is formed to have an inverse staggered structure. That is, the gate electrode 104a is formed below the active pattern 108, and the source electrode 106a and the drain electrode 106b are formed above the active pattern 108. In addition, the gate insulating layer 110 is formed to cover the gate electrode 104a to insulate the gate electrode 104a, the source electrode 106a, and the drain electrode 106b.

An interlayer insulating layer 124 is disposed on the thin film transistor TFT. The interlayer insulating layer 124 includes a contact hole CH exposing a portion of the drain electrode 106b.

The transparent electrode 112 is formed on the interlayer insulating layer 124 and may be formed to be connected to the drain electrode 106b through the contact hole CH, but this may vary depending on the structure of the thin film transistor TFT. , But not limited to the above. That is, when the TFT is not an inverted staggered structure, a contact hole exposing a part of the drain electrode may be formed in the gate insulating film, and in this case, the transparent electrode may be formed on the gate insulating film to form the contact hole. It may be connected to the drain electrode through. Meanwhile, the interlayer insulating layer 124 may be formed of silicon oxide or silicon nitride for protection of the thin film transistor TFT and for isolation between devices and / or signal lines, but is not limited thereto.

The transparent electrode 112 may have indium tin oxide (ITO), indium zinc oxide (IZO), and indium cerium oxide (Indium) so that light reflected by the reflective pattern 104b may be transmitted to the front surface. It may be formed of a transparent conductive material such as Cerium Oxide (ICO) and Tin Oxide (ZO).

The pixel defining layer 114 may be formed on the interlayer insulating layer 124 and the transparent electrode 112 and may expose a portion of the transparent electrode 112. In this case, an area corresponding to the first electrode 118a exposed by the pixel defining layer 114 may be defined as a light emitting area.

The pixel defining layer 114 may be formed of silicon oxide or silicon nitride, but is not limited thereto.

The sacrificial pattern 116 may be formed between the transparent electrode 112 and the pixel defining layer 114 and may have an undercut structure along an edge of the emission area. That is, the sacrificial pattern 116 may be formed on the transparent electrode 112, and may be formed inside the pixel defining layer 114 along the edge of the transparent electrode 112.

The material of the sacrificial pattern 116 may be selected in consideration of an etching selectivity characteristic with the transparent electrode 112. For example, the material of the sacrificial pattern 116 may be any one selected from chromium (Cr), molybdenum (Mo), titanium (Ti), silver (Ag), or an alloy thereof, but is not limited thereto.

The sacrificial pattern 116 may have a thickness of 10 μs to 100 μs, but is not limited thereto. In this case, the reason why the thickness of the sacrificial pattern 116 is 10 Å or more is to ensure the minimum thickness for forming the sacrificial pattern 116. In addition, the thickness of the sacrificial pattern 116 is 100 Å or less because the organic light emitting layer 120 is formed by the thickness of the sacrificial pattern 116 near the region where the sacrificial pattern 116 is formed, that is, at the edge of the emission region. This is to prevent deterioration of step coverage characteristics of the second electrode 122.

The reflective pattern 104b may be formed to overlap the transparent electrode 112. In this case, since the reflective pattern 104b may be formed on the same plane as the gate electrode 104a, the gate insulating layer 110 and the interlayer insulating layer may be formed between the reflective pattern 104b and the transparent electrode 112. 124 may be located.

The reflective pattern 104b may reflect the light emitted through the first electrode 118a and the transparent electrode 112 from the light emitted from the organic light emitting layer 120 to the front surface.

The reflective pattern 104b is selected from aluminum (Al), molybdenum (Mo), titanium (Ti), gold (Au), silver (Ag), palladium (Pd), or an alloy thereof, which has conductivity and has good reflection characteristics. It may be formed of any one material, but is not limited thereto.

The reflective pattern 104b may have a thickness of 500 mV to 3000 mV. When the thickness of the reflective pattern 104b is less than 500 μs, light emitted from the organic light emitting layer 120 to the rear surface may pass through the reflective pattern 104 b. Therefore, the thickness of the reflective pattern 104b may be 500 μm or more as described above. By making it possible, the fall of the reflection efficiency of the said light can be prevented. In addition, when the thickness of the reflective pattern 104b exceeds 3000 ms, the manufacturing time of the reflective pattern 104b becomes considerably longer. Therefore, the thickness of the reflective pattern 104b is set to 3000 ms or less, so that the organic light emitting display device The manufacturing time of 100 can be prevented from becoming long.

The first electrode 118a may be formed on the transparent electrode 112 to be electrically connected to the transparent electrode 112. The first electrode 118a may be formed to be disconnected from the first electrode film 118b remaining on the substrate 102 at the edge of the emission area by the undercut structure formed in the sacrificial pattern 116. That is, the first electrode 118a may be patterned to be spaced apart from each other by the undercut structure formed in the sacrificial pattern 116. As described above, the reason why the first electrode 118a is patterned will be described in detail in the method of manufacturing the organic light emitting display device 100 according to the exemplary embodiment.

In order for the first electrode 118a to be patterned by the undercut structure of the sacrificial pattern 116, the thickness of the first electrode 118a should be smaller than the thickness of the sacrificial pattern 116. Thus, some or all of the light emitted from the organic emission layer 120 to the rear surface may pass through the first electrode 118a without being reflected from the first electrode 118a to the front surface. In this case, the light transmitted through the first electrode 118a may be reflected to the entire surface by the reflective pattern 104b while passing through the transparent electrode 112. Meanwhile, the thickness of the first electrode 118a is not particularly limited since the thickness of the first electrode 118a depends on the thickness of the sacrificial pattern 116.

The first electrode 118a may be a cathode. Therefore, the first electrode 118a may receive a voltage from the transparent electrode 112 to provide electrons to the organic emission layer 120. In this case, the first electrode 118a may be magnesium (Mg), silver (Ag), aluminum (Al), calcium (Ca), molybdenum (Mo), alloys thereof, or the like having low resistance and work function. It may be formed of a material, but is not limited thereto.

The organic emission layer 120 is formed of an organic material, for example, an organic fluorescent material on the first electrode 118a, and may receive electrons from the first electrode 118a. Here, an electron injection layer and an electron transport layer may be additionally formed between the organic emission layer 120 and the first electrode 118a.

The second electrode 122 may be formed to face the first electrode 118a with the organic emission layer 120 therebetween.

The second electrode 122 may be an anode. Accordingly, the second electrode 122 may provide holes to the organic emission layer 120. The second electrode 122 has a high work function of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium Cerium Oxide (ICO), and Tin Oxide (Zinc Oxide). It may be formed of a transparent conductive material such as ZO), but is not limited thereto.

A hole transport layer and an electron injection layer may be additionally formed between the organic emission layer 120 and the second electrode 122.

Accordingly, the organic light emitting layer 120 may receive electrons and holes from each of the first and second electrodes 118a and 122 to generate excitons to emit light to the front, and according to an embodiment of the present invention. The organic light emitting display device 100 may display an image by using the light.

According to the exemplary embodiment of the present invention, the light generated in the organic light emitting layer 120 is directly emitted toward the second electrode 122 or reflected by the first electrode 118a and then the second electrode 122. Can be emitted in the () direction. In addition, the light transmitted through the first electrode 118a among the light generated by the organic emission layer 120 may be reflected toward the second electrode 122 by the reflective pattern 104b while passing through the transparent electrode 112. have.

Accordingly, the organic light emitting display device 100 according to the exemplary embodiment has excellent light emission efficiency by effectively emitting light emitted from the organic light emitting layer 120 to the entire surface of the substrate 102.

In one embodiment of the present invention, the reflective pattern 104b is formed on the same plane as the gate electrode 104a to include the same material as the gate electrode 104a, but is not limited thereto. That is, the reflective pattern 104b may be formed on the same plane as the source electrode 106a and the drain electrode 106b to overlap the transparent electrode 112 with the interlayer insulating layer 124 therebetween. . In addition, the formation position of the reflective pattern 104b, and thus the insulating film configuration between the reflective pattern 104b and the transparent electrode 112 may be appropriately changed according to the structure of the thin film transistor TFT.

2A to 2H are cross-sectional views illustrating processes of manufacturing an organic light emitting display device according to an embodiment of the present invention.

In order to manufacture the organic light emitting display device 100 according to the exemplary embodiment of the present invention, first, as shown in FIGS. 2A to 2C, the gate electrode 104a and the source electrode 106a are disposed on the substrate 102. ), The thin film transistor TFT including the drain electrode 106b, the active pattern 108, and the gate insulating layer 110, and the reflective pattern 104b are formed.

Specifically, first, as shown in FIG. 2A, after providing the substrate 102, at least one gate metal film is formed on the entire surface of the substrate 102, and then at least one of the gate metal film is photo-etched. The gate electrode 104a and the reflective pattern 104b stacked in layers or more are formed at the same time. In addition, here, the reflective pattern 104b may not be formed simultaneously with the gate electrode 104a, but may be formed at the time of forming a source electrode and a drain electrode described later.

Subsequently, as shown in FIG. 2B, the gate insulating layer 110 and the active layer are sequentially formed on the entire surface of the substrate 102, and then the active pattern 108 is formed by photo etching the active layer. Meanwhile, the active pattern 108 may be formed of amorphous silicon or polysilicon material, and the active pattern 108 of polysilicon material may be formed using an amorphous silicon material and then using a crystallization method. . Here, as the crystallization method, the Alternating Magnetic Field Crystallization (AMFC) method, the Excimer Laser Annealing (ELA) method, the Sequential Lateral Solidification (SLS) method, the metal induced crystallization (Metal Induced Crystallization) method : MIC) method and metal induced lateral crystallization (MILC) method may be appropriately selected.

Subsequently, as shown in FIG. 2C, at least one source / drain metal film is formed on the entire surface of the substrate 102, and then source electrodes stacked in at least one layer by photo etching the source / drain metal film. 106a) and drain electrode 106b are formed. As a result, a thin film transistor TFT and a reflective pattern 104b including the gate electrode 104a, the source electrode 106a, the drain electrode 106b, the active pattern 108, and the gate insulating layer 110 may be formed. .

Next, as shown in FIG. 2D, an interlayer insulating layer 124 having a contact hole CH is formed on the substrate 102 to expose a portion of the drain electrode 106b. In this case, a photolithography process may be used to form the contact hole CH.

Next, as illustrated in FIG. 2E, the transparent electrode 112 and the sacrificial layer 116a connected to the drain electrode 106b are sequentially formed on the interlayer insulating layer 124 through the contact hole CH. In this case, a photolithography process may be used to form the transparent electrode 112 and the sacrificial layer 116a. In this case, the transparent electrode 112 and the sacrificial layer 116a may be formed in the same pattern shape.

Next, as illustrated in FIG. 2F, a pixel defining layer 114 exposing a portion of the sacrificial layer 116a is formed on the substrate 102 to define a light emitting region. In this case, a photolithography process may be used to form the pixel defining layer 114, and a portion of the exposed sacrificial layer 116a may correspond to the emission area.

Next, as shown in FIG. 2G, a portion of the exposed sacrificial layer is removed to form a sacrificial pattern 116 under the pixel defining layer 114 and having an undercut structure. Expose some.

In detail, the exposed sacrificial layer is wet-etched using the pixel defining layer 114 as a mask so that a part of the transparent electrode 112 is exposed. In this case, a sacrificial pattern 116 having an undercut structure may be formed due to the isotropic property of the wet etching. In this case, the reason why the pixel defining layer 114 may be used as the mask is because the etching selectivity of the pixel defining layer 114 and the sacrificial layer with respect to the wet etching is large. If the etching selectivity of the pixel defining layer 114 and the sacrificial layer with respect to the wet etching is small, a photoresist pattern used in the photolithography process of the pixel defining layer 114 may be used as the mask. The photoresist pattern may be removed after the sacrificial pattern 116 is formed. Meanwhile, instead of the wet etching method, a dry etching method may be used.

Next, as shown in FIG. 2H, the first electrode 118a patterned for each subpixel is formed on the exposed transparent electrode 112 using an undercut structure, and then on the first electrode 118a. The organic emission layer 120 and the second electrode 122 are sequentially formed on the substrate.

Specifically, the first electrode film is deposited after charging the substrate 102 in an evaporator. In this case, since the sacrificial pattern 116 has an undercut structure, the first electrode layer may be automatically patterned at the same time as the deposition of the first electrode layer to form the first electrode 118a. For this reason, a separate mask process for forming the first electrode 118a is not necessary. Meanwhile, the first electrode film 118b of the first electrode film except for the first electrode 118a remains on the substrate 102 as it is.

Subsequently, immediately after the first electrode 118a is formed, the organic light emitting layer 120 is formed on the exposed first electrode 118a using the low molecular deposition method or the thermal transfer method in the deposition apparatus.

As described above, since the first electrode 118a and the organic light emitting layer 120 are continuously formed in the same deposition apparatus, the first electrode 118a may be prevented from being exposed to air and / or moisture.

Subsequently, the second electrode 122 is formed on the entire surface of the substrate 102 to complete the organic light emitting display device 100 according to an exemplary embodiment.

As described above, in the method of manufacturing the organic light emitting display device 100 according to the exemplary embodiment, the first electrode 118a may be patterned using the sacrificial pattern 116 having the undercut structure. There is an advantage that a separate mask process for forming the first electrode 118a is not necessary. In addition, the reflective pattern 104b may be formed under the first electrode 118a to manufacture the organic light emitting display device 100 having excellent luminous efficiency.

In addition, since the first electrode 118a and the organic light emitting layer 120 may be continuously formed in the same deposition apparatus, the first electrode 118a may be prevented from being exposed to air and / or moisture. As a result, the organic light emitting display device 100 capable of driving a low voltage can be manufactured.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains can realize that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. I can understand that.

Therefore, since the embodiments described above are provided to completely inform the scope of the invention to those skilled in the art, it should be understood that they are exemplary in all respects and not limited. The invention is only defined by the scope of the claims.

According to the present invention, the first electrode may be formed without a separate mask process by using a sacrificial pattern having an undercut structure.

Further, according to the present invention, since the first electrode and the organic light emitting layer can be continuously formed in the same vapor deposition machine, the first electrode can be prevented from being exposed to air and / or moisture. As a result, an organic light emitting display device capable of driving a low voltage can be manufactured.

In addition, according to the present invention, since the sacrificial pattern having the undercut structure can be formed in a thin thickness, it is possible to prevent the step coverage characteristics of the organic light emitting layer and the second electrode formed thereon from being lowered.

In addition, according to the present invention, the light emission efficiency may be improved through the reflective electrode, and thus the display quality of the organic light emitting diode display may be improved.

Claims (18)

Board; A thin film transistor formed on the substrate and having a gate electrode, a source electrode, a drain electrode, an active pattern, and a gate insulating film; An insulating film on which contact holes exposing a portion of the drain electrode are formed; A transparent electrode formed on the insulating layer on which the contact hole is formed and connected to the drain electrode through the contact hole; A pixel defining layer formed on the insulating layer and the transparent electrode on which the contact hole is formed and defining a light emitting region by exposing a portion of the transparent electrode; A sacrificial pattern formed between the transparent electrode and the pixel defining layer and having an undercut structure formed along an edge of the emission area; And A reflective pattern overlapping the transparent electrode with at least one of the gate insulating film and the insulating film on which the contact hole is formed An organic electroluminescent display comprising a. The method of claim 1, A first electrode formed on the transparent electrode; An organic emission layer formed on the first electrode; And A second electrode facing the first electrode with the organic light emitting layer therebetween; An organic electroluminescent display further comprising. The method of claim 2, The first electrode is patterned for each subpixel by an undercut structure formed in the sacrificial pattern. The method of claim 2, The first electrode is a cathode, and the second electrode is an anode. The method of claim 1, And the insulating layer in which the contact hole is formed is a gate insulating layer or an interlayer insulating layer of the thin film transistor. The method of claim 1, The thickness of the sacrificial pattern is 10 kHz to 100 kHz, the organic light emitting display device. The method of claim 1, The reflective pattern is formed on the same plane as the gate electrode of the thin film transistor. The method of claim 1, The reflective pattern is formed on the same plane as the source electrode and the drain electrode of the thin film transistor. The method of claim 1, The thickness of the reflective pattern is 500 kPa to 3000 kPa organic light emitting display device. Providing a substrate; Forming a thin film transistor and a reflective pattern including a gate electrode, a source electrode, a drain electrode, an active pattern, and a gate insulating layer on the substrate; Forming an interlayer insulating layer having a contact hole exposing a portion of the drain electrode on the substrate; Sequentially forming a transparent electrode and a sacrificial layer connected to the drain electrode through the contact hole on the interlayer insulating layer; Forming a pixel defining layer exposing a portion of the sacrificial layer to define a light emitting region on the substrate; Removing a portion of the exposed sacrificial layer to form a sacrificial pattern under the pixel defining layer and having an undercut structure, and exposing a portion of the transparent electrode; And Forming a patterned first electrode on each exposed subpixel using the undercut structure on the exposed transparent electrode Method for manufacturing an organic light emitting display device comprising a. The method of claim 10, Sequentially forming an organic emission layer and a second electrode on the first electrode A method of manufacturing an organic light emitting display device further comprising. The method of claim 11, And the first electrode is a cathode, and the second electrode is an anode. The method of claim 10, And the gate electrode and the reflective pattern of the thin film transistor are formed at the same time. The method of claim 10, The source electrode and the drain electrode of the thin film transistor, and the reflective pattern is formed at the same time method of manufacturing an organic light emitting display device. The method of claim 10, The thickness of the reflective pattern is 500 Å to 3000 제조 manufacturing method of an organic light emitting display device. The method of claim 10, The sacrificial pattern includes any one selected from chromium (Cr), molybdenum (Mo), titanium (Ti), silver (Ag), or an alloy thereof. The method of claim 10, The thickness of the sacrificial pattern is a method of manufacturing an organic light emitting display device, characterized in that 10 ~ 100Å. The method of claim 10, The exposing a part of the transparent electrode is a method of manufacturing an organic light emitting display device, characterized in that using a wet etching method.

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